JP2006066578A - Conveyance member with cleaning function and cleaning method of substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning member capable of efficiently removing foreign substances each having a particle diameter of about 0.2-2.0 μm adhering to various kinds of substrate processing devices such as a semiconductor, a flat-panel display, and a printed circuit board. <P>SOLUTION: A conveyance member with a cleaning function comprises a cleaning layer on at least one side of a conveyance member. The variation of the film thickness of the cleaning layer is ≤10%. In particular, the above cleaning layer does not comprise adhesive power substantially. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a transport member with a cleaning function used in various substrate processing apparatuses that do not like foreign substances, such as manufacturing apparatuses and inspection apparatuses for semiconductors, flat panel displays, printed boards, and the like, and cleaning of the substrate processing apparatus using the same. Regarding the method.

In various substrate processing apparatuses such as semiconductors, flat panel displays, and printed circuit boards, the respective transport systems and the substrate are transported while being physically contacted. At this time, if foreign matter adheres to the substrate or the transport system, subsequent substrates are successively contaminated (cross-contaminated), and the apparatus is periodically stopped to clean the inside of the substrate processing apparatus. There was a need. For this reason, there existed a problem that the operation rate fell and a lot of labor was required.

In order to solve this problem, a method of removing a foreign substance adhering to the inside of the substrate processing apparatus by transporting the substrate to which the adhesive substance is fixed (refer to Patent Document 1), transporting the plate member, There has been proposed a method (see Patent Document 2) for removing foreign substances adhering to the surface. These methods do not require the apparatus to be periodically stopped, and can avoid a reduction in operating rate and a great deal of labor. In particular, the former method is superior in removing foreign matters compared to the latter method.
JP-A-10-154686 JP-A-11-87458

Along with the miniaturization of semiconductor devices, adhesion of foreign matters not only to the front surface of the wafer but also to the back surface has become a problem in semiconductor manufacturing and inspection processes. This is because foreign substances are transferred from the back surface to the front surface in the cleaning process, resulting in a decrease in product yield.

The current wiring interval (design rule) is mainly 0.18 μm, but if a foreign substance having the same or larger size than this wiring interval adheres, defects such as disconnection are likely to occur. In particular, foreign matter having a particle size of about 0.2 to 2.0 μm is a problem. However, in the reports so far including the above-described proposed method, the particle size of the foreign matter to be removed has not been clarified, and it is still insufficient as a means for actively reducing the number of foreign matters.

In light of such circumstances, the present invention provides a cleaning member that can efficiently remove foreign matters having a particle diameter of about 0.2 to 2.0 μm adhering to various substrate processing apparatuses such as semiconductors, flat panel displays, and printed circuit boards. The issue is to provide.

As a result of intensive investigations to overcome the above problems, the present inventors have substantially tacky adhesives such as an adhesive that cures and cures on a conveying member such as a silicon wafer as a cleaning member. In the case of providing a cleaning layer that does not have a cleaning function, the thickness of the cleaning layer is uniformly controlled to increase the physical contact area with foreign matter and 0.2. Knowing that foreign matters having a particle diameter of about 2.0 μm can be efficiently removed, the present invention has been completed.

That is, the present invention provides a transport member with a cleaning function, wherein the transport member with a cleaning function is provided with a cleaning layer on at least one surface of the transport member, and the variation in the thickness of the cleaning layer is 10% or less. It is related.

In particular, the present invention can provide a conveying member with a cleaning function having the above-described configuration in which the cleaning layer has substantially no adhesive force.

Further, the present invention provides a substrate processing apparatus cleaning method characterized by transporting the transport member with a cleaning function having the above configuration into the substrate processing apparatus, and a substrate processing apparatus cleaned by this cleaning method, It can be provided.

As described above, in the present invention, the film thickness of the cleaning layer is uniformly controlled, and the physical contact area with the foreign matter is positively increased. It is possible to provide a conveying member with a cleaning function that can efficiently remove foreign matters having a particle diameter of about 0.2 to 2.0 μm that are likely to cause defects such as the above.

In the present invention, the thickness of the cleaning layer can be selected in a wide range depending on the material of the cleaning layer, etc., and the type of the substrate processing apparatus that is a target for removing foreign matter. In particular, it should be in the range of 1 to 20 μm.

In such a cleaning layer, by setting the variation in film thickness to 10% or less, particularly preferably 5% or less, foreign matter having a particle diameter of about 0.2 to 2.0 μm that is likely to cause defects such as disconnection is removed. It can be removed efficiently. On the other hand, if the variation in film thickness exceeds 10%, a problem is likely to occur in the removal of the foreign matter.

The above “film thickness variation” has the following meaning. That is, when the target film thickness [t0] is set in accordance with the material of the cleaning layer, the type of substrate processing apparatus to be removed of foreign matter, and the like, the actual value at each measurement point is set. Is the value obtained by dividing the absolute value of [t0]-[tn] by [t0] and multiplying this by 100 times. This can be expressed by the following formula.

| [T0]-[tn] |
Variation in film thickness [R] = ───────────── × 100
[T0]

Here, the measurement point is appropriately determined depending on the shape of the conveying member that constitutes the conveying member with a cleaning function. In a generally used transfer member such as a circular silicon wafer, a plurality of measurement points are arbitrarily selected on a straight line from the wafer center point to the wafer edge portion with respect to the cleaning layer provided thereon. At each measurement point, the film thickness [tn] is measured, and the variation [R] is obtained by the above formula, and the average value is calculated.

The actual measurement method is as follows.
For the measurement, a stylus type surface roughness measuring device (“P-11” manufactured by Tencor) was used. The stylus was moved at a measurement speed of 1 μm / second. The measurement range is 100 μm, the curvature of the tip of the stylus is 2 μm, and the stylus is made of diamond.

A part of the cleaning layer was removed from the wafer center point to the wafer edge portion with a cutter or the like on the transfer member with a cleaning function provided with a cleaning layer on a silicon wafer to obtain a sample (measurement sample). Using this sample, the difference in level between the wafer and the cleaning layer was measured and used as the film thickness. Nine measurement points were measured at 10 mm intervals.

In the present invention, the cleaning layer having such a uniform film thickness is not particularly limited. For example, a curable adhesive that polymerizes and cures upon receiving active energy such as ultraviolet rays, radiation, and heat, and a heat resistant resin that is used in semiconductor manufacturing equipment such as polyimide resin and fluorine resin are preferably used. . The cleaning layer made of these materials has substantially no adhesiveness, and when transported into the substrate processing apparatus, it is possible to obtain a cleaning member that can be transported reliably without strongly adhering to the apparatus contact portion.

In the case of using a polymerization-curing pressure-sensitive adhesive for the cleaning layer, the material is not particularly limited as long as it has a property of being cured by an active energy source and having a three-dimensional network structure. For example, it is preferable that the pressure-sensitive adhesive polymer contains a compound having one or more unsaturated double bonds in the molecule and a polymerization initiator. Examples of the active energy source include ultraviolet rays, radiation, and heat, and ultraviolet rays are particularly preferable.

Examples of the pressure-sensitive adhesive polymer include an acrylic polymer having (meth) acrylic acid and / or (meth) acrylic acid ester as a main monomer. In synthesizing this acrylic polymer, a compound having two or more unsaturated double bonds in the molecule is used as a copolymerization monomer, or a compound having an unsaturated double bond in the molecule is functionalized in the synthesized acrylic polymer. An unsaturated double bond may be introduced into the molecule of the acrylic polymer, for example, by a chemical bond between the groups. Thereby, this polymer itself can also participate in the polymerization curing reaction by active energy.

In addition, the compound having one or more unsaturated double bonds in the molecule (hereinafter referred to as a polymerizable unsaturated compound) is a low molecular weight substance that is nonvolatile and has a weight average molecular weight of 10,000 or less. It is particularly desirable to have a weight average molecular weight of 5,000 or less so that three-dimensional networking at the time of curing can be efficiently performed.

Examples of such polymerizable unsaturated compounds include phenoxy polyethylene glycol (meth) acrylate, ε-caprolactone (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, trimethylolpropane tri ( Examples include meth) acrylate, dipentaerythritol hexa (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, and oligoester (meth) acrylate. Among these compounds, one or more of them are used.

Furthermore, the polymerization initiator is not particularly limited, and known ones can be used. For example, when using heat as the active energy, a thermal polymerization initiator such as benzoyl peroxide or azobisisobutyronitrile, and when using light, benzoyl, benzoin ethyl ether, cibenzyl, isopropyl benzoin ether, benzophenone, Photopolymerization of Michler's ketone, chlorothioxanthone, dodecylthioxanthone, cymethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane, 2,2-dimethoxy-2-phenylacetophenone, etc. Initiators are mentioned.

When a heat-resistant resin used in semiconductor manufacturing equipment such as polyimide resin or fluorine-based resin is used for the cleaning layer, this heat-resistant resin may have any molecular structure, but substrate processing It should be free of substances that contaminate the device.

A typical example is a heat-resistant resin obtained by heating imidization of a polyamic acid resin having a butadiene-acrylonitrile copolymer skeleton in the main chain. Here, the polyamic acid resin can be obtained by reacting a tetracarboxylic dianhydride component and a diamine component in an appropriate organic solvent at a substantially equimolar ratio.

Examples of the tetracarboxylic dianhydride component include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 2,2', 3,3'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,2 -Bis (2,3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) Sulfone dianhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic acid dianhydride. These may be used alone or in combination of two or more.

Examples of the diamine component include a diamine having a butadiene-acrylonitrile copolymer skeleton, for example, an aliphatic diamine represented by the following formula (1) or formula (2) (wherein m1 and m2 are 0 or more: And n is an integer of 1 or more, and R is a single bond or an organic group). These aliphatic diamines may be used alone or in combination with other diamines if necessary.

<Aliphatic Diamine Represented by Formula (1)>

<Aliphatic Diamine Represented by Formula (2)>

Examples of other diamines that can be used in combination with the above aliphatic diamines include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl Sulfide, 4,4′-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1, 3-bis (3-aminophenoxy) benzene, 1,3 Bis (4-aminophenoxy) -2,2-dimethylpropane, hexamethylenediamine, 1,8-diaminooctane, 1,12-diaminododecane, 4,4′-diaminobenzophenone, 1,3-bis (3- Aminopropyl) -1,1,3,3-tetramethyldisiloxane and the like.

The tetracarboxylic dianhydride component and the diamine component can be reacted in an organic solvent at a substantially equimolar ratio. When a diamine having a butadiene-acrylonitrile copolymer skeleton is used, gelation can be prevented by reacting at a temperature of 100 ° C. or higher. When the polymerization is carried out at a temperature lower than this, depending on the amount of the diamine used, the gel content may remain in the system and become clogged, and it may be difficult to remove foreign substances by filtration. In addition, the reaction may become non-uniform and the resin characteristics may vary.

Moreover, polar solvents such as N, N-dimethylacetamide, N-methyl-2-pyrrolidone and N, N-dimethylformamide are used as the organic solvent for reacting the tetracarboxylic dianhydride component with the diamine component. In order to adjust the solubility of raw materials and resins, nonpolar solvents such as toluene and xylene can be appropriately mixed and used.

The heat resistant resin made of a polyimide resin can be obtained by heat-treating the polyamic acid resin obtained by the above method at a high temperature in an inert atmosphere. Specifically, after drying and removing the reaction solvent used, heat treatment is performed at a high temperature of 150 ° C. or higher in an inert atmosphere such as a nitrogen atmosphere or a vacuum in order to prevent oxidative degradation of the resin. . Thereby, the volatile component remaining in the resin can be completely removed.

In the present invention, the cleaning layer has a 180-degree peeling adhesive force (measured according to JIS Z0237) of 0.20 N / 10 mm or less, preferably 0.01 to 0.1 N / 10 mm with respect to the silicon wafer (mirror surface). It should be about the width. If the adhesive strength is too high, it may strongly adhere to the device contact portion during transport, which may cause transport trouble.

The cleaning layer has a tensile modulus (test method JIS K7127) of 10 MPa or more, preferably 10 to 2,000 MPa. If the tensile elastic modulus is too small, the cleaning layer is likely to protrude or fail during cutting, and it may adhere strongly to the apparatus contact portion during transportation, resulting in transportation trouble. When the tensile elastic modulus becomes too large, the performance of removing the adhering foreign matter on the transport system is deteriorated.

In the present invention, the cleaning member having the above-described configuration is provided directly on at least one surface of the transport member, thereby providing a transport member with a cleaning function.

This manufacturing method is not particularly limited. For example, the above-described cleaning layer forming material is applied onto the conveying member by a spin coater or a circular coater and dried. At that time, if necessary, an appropriate film thickness uniformization process can be performed so that the film thickness variation is within the above range. After that, in the case of the curable adhesive, by irradiating with an active energy source such as ultraviolet rays and polymerizing and curing, and in the case of the heat resistant resin, the film thickness variation is within the above range by performing a high temperature heat treatment. Forming a cleaning layer.

In addition, the conveyance member with a cleaning function of this invention can also be produced by methods other than the above. For example, by using an appropriate plastic film such as a polyethylene terephthalate film or a polyimide film, a cleaning layer having a variation in film thickness within the above range is formed thereon by the same method as described above. And The cleaning sheet may be laminated on the conveying member, or may be produced by transferring only the above cleaning layer onto the conveying member.

In the transport member with a cleaning function of the present invention, the transport member on which the cleaning layer is provided is not particularly limited, and is appropriately determined according to the type of the substrate processing apparatus. Specific examples include substrates for flat panel displays such as semiconductor wafers, LCDs, and PDPs, and other compact disks and MR heads.

The transport member with a cleaning function of the present invention configured as described above can have a protective film bonded to the surface thereof for protecting the cleaning layer until it is transported into the substrate processing apparatus. . The protective film is not particularly limited as long as the protective purpose can be achieved. The thickness is usually preferably 1 to 100 μm.

Protective films include polyolefins such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, and polyvinyl chloride that have been stripped with a silicone, long-chain alkyl, fluorine, fatty acid amide, or silica release agent. , Vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, There are plastic films made of polystyrene, polycarbonate, etc., polyimide resin films, fluororesin films, and the like. Moreover, the said film which has not performed peeling processing can also be used.

The transport member with a cleaning function of the present invention has the above-described configuration, and when used, the transport member is transported into the substrate processing apparatus according to a conventional method, so that foreign matter adhering to the substrate processing apparatus, in particular, disconnection or the like is defective. It is possible to efficiently remove foreign matters having a particle diameter of about 0.2 to 2.0 μm, which are likely to cause the above-described problem.

Here, the substrate processing apparatus to be cleaned is not particularly limited. For example, an exposure apparatus, a resist coating apparatus, a developing apparatus, an ashing apparatus, a dry etching apparatus, an ion implantation apparatus, a PVD apparatus, a CVD apparatus, and an appearance inspection apparatus. And various processing apparatuses such as a wafer prober. The present invention can provide each substrate processing apparatus from which foreign substances in the apparatus are removed by the above method.

Examples of the present invention will be described below in more detail. However, the present invention is not limited only to the following examples. Hereinafter, “parts” means parts by weight. Further, the performance evaluation of the cleaning member was performed as follows.

<Performance evaluation of cleaning member>
Concerning the dust removal property, a conveying member with a cleaning function, which is a cleaning member, is conveyed to a liner film peeling apparatus (“HR-300CW” manufactured by Nitto Seiki Co., Ltd.) for manufacturing a cleaning sheet (hereinafter referred to as “apparatus A”). Evaluation was made by measuring the number of foreign matters before and after the conveyance. Further, the transportability was evaluated based on whether or not the transport member with the cleaning function can be peeled off from the chuck table by lift pins after transporting onto the chuck table by the above apparatus, performing vacuum suction and releasing the vacuum.

In the evaluation of dust removal, the number of foreign matters was measured by using a non-patterned on-wafer foreign matter inspection apparatus (“SFS6200” manufactured by KLA Tencor) for semiconductor manufacturing. The number of foreign matters was measured for foreign matters (particles) of 0.200 μm or more on an 8-inch silicon wafer. From the number of foreign matters before and after the conveyance, the foreign matter removal rate was determined as follows.

<Measurement calculation of foreign matter removal rate>
First, a new silicon wafer was transferred to apparatus A, which is a cleaning target apparatus, with its mirror surface facing downward so that the mirror surface was in contact with the transfer arm and chuck table (face-down transfer), and adhered to the mirror surface. The number of foreign matters is measured (number of foreign matters 1). Next, several transport members with a cleaning function are transported, and a new wafer is transported face-down again in the same manner as described above, and the number of foreign matters adhering to the mirror surface is measured (number of foreign matters 2).

The foreign matter removal rate was calculated from the measured value according to the following equation.

(Number of foreign matter 2) Foreign matter removal rate = 100-------x 100
(Number of foreign objects 1)
This foreign matter removal rate was evaluated as a parameter for dust removal (cleaning effect) of the conveying member with a cleaning function.

Polyethylene glycol 200 dimethacrylate (100 parts by weight) with respect to 100 parts of an acrylic polymer (weight average molecular weight 700,000) obtained from a monomer mixture consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate and 5 parts of acrylic acid. 200 parts by Shin-Nakamura Chemical Co., Ltd. (trade name “NK Ester 4G”), 3 parts by polyisocyanate compound (trade name “Coronate L” by Nippon Polyurethane Industry Co., Ltd.) and benzyldimethyl ketal (Ciba Specialty Chemicals) as a photopolymerization initiator 3 parts of a product name “Irgacure 651” manufactured by the company was mixed uniformly to prepare an ultraviolet curable pressure-sensitive adhesive solution A.

Next, the UV curable adhesive solution A is applied to one side of an 8-inch silicon wafer so that the target thickness after drying is 15 μm using a spin coater (“DELTA 80T2” manufactured by Suss Micro Tec). It was applied to. The conditions at this time were as follows: the adhesive solution A was applied at a rotational speed of 5,000 rpm, an acceleration of 10,000 rpm / s, and an application time of 4 s, and then the rotational speed of 3,000 rpm and an acceleration of 1,000 rpm / s. Application time: Two-stage application at 50 s.

Subsequently, in order to remove the edge bulge peculiar to the spin coater, toluene as a solvent was discharged at a rotational speed of 3,000 rpm, an acceleration of 1,000 rpm / s, and a coating time of 30 s. The nozzle for edge removal at this time was repeatedly moved in the range from the wafer edge position of 5 mm to 1 mm at a discharge speed of 10 ml / min and a moving speed of 3 mm / s.

Furthermore, after drying at 120 ° C. for 10 minutes, toluene was discharged at a rotation speed of 3,000 rpm, an acceleration of 10,000 rpm / s, and a coating time of 50 s in order to completely remove the edge portion. The nozzle for edge removal at this time was repeatedly moved in the range from the wafer edge position of 5 mm to 1 mm at a discharge speed of 10 ml / min and a moving speed of 3 mm / s.

In this way, an adhesive-carrying transport member A from which the edge portion 5 mm was completely removed was obtained. Then, after drying in a clean oven at 150 ° C. for 10 minutes, the release-treated surface of a protective film (protective film A) (thickness 25 μm) made of a long-chain polyester film on one surface treated with a non-silicone release agent Were bonded together to obtain a conveying member A with a protective film.

The transport member A with a protective film was irradiated with ultraviolet light having a center wavelength of 365 nm at a light quantity of 1,000 mJ / cm ² to obtain a transport member A having an ultraviolet cured cleaning layer. The protective film A of the conveying member A having the ultraviolet-cured cleaning layer was peeled off to produce a conveying member A with a cleaning function.

The film thickness of the cleaning layer of the conveying member A with the cleaning function was 15.8 μm, and the variation in film thickness was R = 9.2%.

In addition, in order to examine the adhesive strength and tensile strength of the cleaning layer, a measurement sample was separately prepared as follows.

The pressure-sensitive adhesive solution A is applied to the release surface of the protective film A using an applicator so that the thickness after drying is 15 μm, dried in a clean oven at 150 ° C. for 10 minutes, and the pressure-sensitive adhesive with protective film Agent A was obtained. On the pressure-sensitive adhesive side of this pressure-sensitive adhesive A with protective film, the peel-treated surface side of another protective film A was attached with a hand roller, and was cured by irradiating with ultraviolet rays in the same manner as described above to form a cleaning layer.

Using this measurement sample, the 180 ° peel adhesive strength of the cleaning layer with respect to the silicon wafer (mirror surface) was measured and found to be 0.05 N / 10 mm wide. The tensile strength of the cleaning layer was 480 MPa.

The number of foreign matters of 0.200 μm or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device, and there were three. Next, this 8-inch silicon wafer was transported to the apparatus A with the mirror surface facing downward, and then the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, according to size, 1,817 in the range of 0.200 to 0.219 μm, 1,922 in the range of 0.219 to 0.301 μm, 1,807 in the range of 0.301 to 0.412 μm, 1,275 in the range of 0.412 to 0.566 μm, 824 in the range of 0.566 to 0.776 μm, 787 in the range of 0.776 to 1.06 μm, in the range of 1.06 to 1.46 μm 695, 389 in the range of 1.46 to 1.60 μm, 407 in the range of 1.60 μm or more, and 9,922 in total (1 foreign matter).

Next, when the transport member A with the cleaning function produced by the above method was transported to the apparatus A on which the 9,922 foreign substances had adhered, it could be transported without any trouble. Thereafter, a new 8-inch silicon wafer was transported with the mirror surface facing downward, and the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, by size, 474 in the range of 0.200 to 0.219 μm, 488 in the range of 0.219 to 0.301 μm, 455 in the range of 0.301 to 0.412 μm, 0.412 to 0. 284 in the range of 566 μm, 128 in the range of 0.566 to 0.776, 97 in the range of 0.776 to 1.06 μm, 59 in the range of 1.06 to 1.46 μm, 1.46 to The number was 31 in the range of 1.60 μm, 27 in the range of 1.60 μm or more, and the total was 2,044 (the number of foreign matters was 2).

When the foreign matter removal rate was calculated from the foreign matter number 1 and the foreign matter number 2 measured as described above, it was 79.4% as a whole.

30.0 g of ethylene-1,2-bistrimellitate, tetracarboxylic dianhydride (hereinafter referred to as TMEG) was dissolved in 110 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) under a nitrogen stream. Aliphatic diamine represented by the formula (1) (trade name “ATBN1300 × 16” manufactured by Ube Industries, Ltd., amine equivalent 900, acrylonitrile content 18%) 65.8 g and 2,2′-bis [4- (4- Aminophenoxy) phenyl] propane (hereinafter referred to as BAPP) 15.0 g was mixed at 120 ° C. and reacted. After this reaction, the mixture was cooled to obtain a polyamic acid resin solution A having a viscosity of 750 cp.

Next, as in Example 1, an 8-inch silicon wafer was placed on a spin coater with the mirror surface facing up, and the polyamic acid resin solution A was rotated at a rotational speed of 1,000 rpm / s and an acceleration of 10,000 rpm. / S, application time: 0.5 s, and then applied in two stages at a rotational speed of 500 rpm, acceleration: 100 rpm / s, and application time: 40 s.

Subsequently, in order to remove the edge bulge peculiar to the spin coater, NMP as a solvent was discharged at a rotation speed of 1,000 rpm, an acceleration of 1,000 rpm / s, and a coating time of 15 s. At this time, the nozzle for edge removal moved repeatedly within the range from the wafer edge position of 5 mm to 1 mm at a discharge speed of 10 ml / min and a moving speed of 3 mm / s.

Furthermore, it dried at 90 degreeC for 10 minutes, and in order to remove an edge part completely, NMP was discharged with the rotation speed of 1,000 rpm, the acceleration of 10,000 rpm / s, and the application | coating time of 50 s. At this time, the nozzle for edge removal moved repeatedly within the range from the wafer edge position of 5 mm to 1 mm at a discharge speed of 10 ml / min and a moving speed of 3 mm / s.

Thus, the conveyance member A with polyamic acid resin from which the edge portion 5 mm was completely removed was obtained. Next, this conveyance member A with a polyamic acid resin was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to convert the polyamic acid resin into a polyimide resin, thereby producing a conveyance member B with a cleaning function.

The film thickness of the cleaning layer of the conveying member B with the cleaning function was 20.1 μm, and the variation in the film thickness was R = 4.6%.

Further, in order to examine the adhesive strength and tensile strength of the cleaning layer, a measurement sample made of a polyimide film was separately prepared as follows.

The polyamic acid resin solution A was applied to a 10 cm square SUS304 foil (thickness 25 μm) with a spin coater (“1H-360S” manufactured by Mikasa) so that the thickness after drying was 15 μm. . Next, it was dried in a clean oven at 90 ° C. for 10 minutes and heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to obtain an evaluation substrate A with a polyimide film. This evaluation board | substrate A with a polyimide membrane | film | coat was immersed and dissolved in the ferric chloride solution, and the polyimide membrane | film | coat A was obtained.

Using this polyimide coating A, the 180 ° peel adhesion to the silicon wafer (mirror surface) was measured and found to be 0.03 N / 10 mm wide. The tensile strength of this cleaning layer was 420 MPa.

The number of foreign matters of 0.200 μm or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device, and found to be 5. Next, this 8-inch silicon wafer was transported to the apparatus A with the mirror surface facing downward, and then the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, 1,867 in the range of 0.200 to 0.219 μm by size, 1,920 in the range of 0.219 to 0.301 μm, 1,715 in the range of 0.301 to 0.412 μm, 1,455 in the range of 0.412 to 0.566 μm, 1,134 in the range of 0.566 to 0.776 μm, 967 in the range of 0.776 to 1.06 μm, 1.06 to 1.46 μm 842 in the range, 1.649 to 1.60 μm, 649 in the range of 1.60 μm or more, 502 in total, 11,051 (1 foreign matter).

Next, when the transport member B with the cleaning function produced by the above method was transported to the apparatus A on which 1,1051 foreign substances had adhered, it could be transported without any problem. Thereafter, a new 8-inch silicon wafer was transported with the mirror surface facing downward, and the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, according to size, 228 in the range of 0.200 to 0.219 μm, 213 in the range of 0.219 to 0.301 μm, 180 in the range of 0.301 to 0.412 μm, 0.412 to. 143 in the range of 566 μm, 109 in the range of 0.566 to 0.776 μm, 89 in the range of 0.776 to 1.06 μm, 71 in the range of 1.06 to 1.46 μm, 1.46 to The number was 47 in the range of 1.60 μm, 31 in the range of 1.60 μm or more, and the total was 1,110 (number of foreign matters 2).

When the foreign matter removal rate was calculated from the foreign matter number 1 and the foreign matter number 2 measured as described above, it was 90.0% as a whole.

In the same manner as in Example 2, a polyamic acid resin solution A was obtained. The viscosity at this time was 700 cp.

Next, an 8-inch silicon wafer is placed on a circular coater (manufactured by Chugai Furnace) with the mirror surface facing up, and the above polyamic acid resin solution A is subjected to wafer rotation speed: 90 rpm, discharge amount: 2.1 ml / min. The nozzle moving speed was 2.0 rpm / s. In order to make the amount of polyamic acid resin per wafer unit area constant at this time, the coating amount was controlled in the range of 1 to 100% in accordance with the wafer coating position (coating length).

Then, it dried at 90 degreeC for 10 minute (s), and the conveyance member C with a polyamic acid resin was obtained. Next, this was heat-treated at 300 ° C. for 2 hours under a nitrogen atmosphere to convert the polyamic acid resin into a polyimide resin, thereby preparing a conveying member C with a cleaning function. The film thickness of the cleaning layer was 15.2 μm, and the variation in film thickness was R = 8.4%.

The number of foreign matters of 0.200 μm or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device, and four was found. Next, this 8-inch silicon wafer was face-down transferred to the apparatus A, and then the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, 1,764 in the range of 0.200 to 0.219 μm, 1,830 in the range of 0.219 to 0.301 μm, 1,673 in the range of 0.301 to 0.412 μm, 1,159 in the range of 0.412 to 0.566 μm, 867 in the range of 0.566 to 0.776 μm, 772 in the range of 0.776 to 1.06 μm, the range of 1.06 to 1.46 μm The number was 638, 452 in the range of 1.46 to 1.60 μm, 339 in the range of 1.60 μm or more, and 9,494 in total (number of foreign matters 1).

Next, when the transport member C with the cleaning function produced by the above method was transported to the apparatus A on which the 9,494 foreign substances were adhered, it could be transported without any trouble. After that, a new 8-inch silicon wafer was conveyed face down, and the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring apparatus.

As a result, according to size, 355 in the range of 0.200 to 0.219 μm, 357 in the range of 0.219 to 0.301 μm, 313 in the range of 0.301 to 0.412 μm, 0.412 to. 212 in the range of 566 μm, 156 in the range of 0.566 to 0.776 μm, 120 in the range of 0.776 to 1.06 μm, 85 in the range of 1.06 to 1.46 μm, 1.46 to The number was 55 in the range of 1.60 μm, 36 in the range of 1.60 μm or more, and the total was 1,689 (number of foreign matters 2).

When the foreign matter removal rate was calculated from the foreign matter number 1 and the foreign matter number 2 measured as described above, it was 82.2% as a whole.

Comparative Example 1
A transport member with a cleaning function using the adhesive solution A under the same conditions as in Example 1 except that edge cutting (removal of the edge rising portion and complete removal of the edge portion) was not performed in Example 1. D was produced. The thickness of this cleaning layer was 24.2 μm, and the variation in film thickness was R = 18.5%.

The number of foreign matters of 0.200 μm or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device, and found to be 5. Next, this 8-inch silicon wafer was conveyed face down to the apparatus A, and the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring device.

As a result, 2,054 in the range of 0.200 to 0.219 μm by size, 2,198 in the range of 0.219 to 0.301 μm, 1,856 in the range of 0.301 to 0.412 μm, 1,672 in the range of 0.412 to 0.566 μm, 1,367 in the range of 0.566 to 0.776 μm, 1,085 in the range of 0.776 to 1.06 μm, 1.06 to 1 It was 754 in the range of .46 μm, 642 in the range of 1.46 to 1.60 μm, 484 in the range of 1.60 μm or more, and 12,112 in total (the number of foreign substances was 1).

Next, when the transport member D with the cleaning function produced by the above method was transported to the apparatus A on which the 12,112 foreign substances had adhered, it could be transported without any trouble. After that, a new 8-inch silicon wafer was conveyed face down, and the number of foreign matters of 0.200 μm or more was measured with a laser type foreign matter measuring apparatus.

As a result, by size, 803 in the range of 0.200 to 0.219 μm, 837 in the range of 0.219 to 0.301 μm, 718 in the range of 0.301 to 0.412 μm, 0.412 to. 644 in the range of 566 μm, 532 in the range of 0.566 to 0.776 μm, 397 in the range of 0.776 to 1.06 μm, 259 in the range of 1.06 to 1.46 μm, 1.46 to The number was 169 in the range of 1.60 μm, 136 in the range of 1.60 μm or more, and the total was 4,496 (number of foreign matters 2).


When the foreign matter removal rate was calculated from the foreign matter number 1 and the foreign matter number 2 measured as described above, it was 62.9% as a whole.

The results of the cleaning performance (the number of foreign matters before and after conveyance, the foreign matter removal rate) of the conveyance members A to C with the cleaning function of Examples 1 to 3 and the conveyance member D with the cleaning function of Comparative Example 1 are shown in the following table. The results are summarized in 1.

Table 1
┌──────┬─────────┬─────────┬───────┐
│ │ Number of foreign matter before transport │ Number of foreign matter after transport │ Foreign matter removal rate │
│ │ (Piece) │ (Piece) │ (%) │
├──────┼─────────┼─────────┼───────┤
│ │ │ │ │
│ Example 1 │ 9,922 │ 2,044 │ 79.4 │
│ │ │ │ │
│ Example 2 │ 11,051 │ 1,110 │ 90.0 │
│ │ │ │ │
│ Example 3 │ 9,494 │ 1,689 │ 82.2 │
│ │ │ │ │
├──────┼─────────┼─────────┼───────┤
│ │ │ │ │
│ Comparative Example 1 │ 12,112 │ 4,496 │ 62.9 │
│ │ │ │ │
└──────┴─────────┴─────────┴───────┘

As is clear from the results of Table 1 above, the conveying members A to C with the cleaning function of Examples 1 to 3 in which the variation (R) in the thickness of the cleaning layer is 10% or less have the variation (R) of 10. It can be seen that the foreign material having a cleaning function of 0.200 μm or more can be more effectively removed as compared with the conveyance member D with the cleaning function of Comparative Example 1 exceeding%.

Claims (4)

A transporting member with a cleaning function, wherein a cleaning layer is provided on at least one surface of the transporting member, and the variation in thickness of the cleaning layer is 10% or less.
The conveying member with a cleaning function according to claim 1, wherein the cleaning layer has substantially no adhesive force.
A cleaning method for a substrate processing apparatus, comprising transporting the transport member with a cleaning function according to claim 1 or 2 into the substrate processing apparatus.
A substrate processing apparatus cleaned by the cleaning method according to claim 3.