JP2006060106A - リード部材及び表面実装型半導体装置 - Google Patents
リード部材及び表面実装型半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000011347 resin Substances 0.000 claims description 44
- 229920005989 resin Polymers 0.000 claims description 44
- 238000005476 soldering Methods 0.000 claims description 13
- 238000005452 bending Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 241000272168 Laridae Species 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
【解決手段】 電子部品に用いられるリード部材において、前記リード部材は、基の部分と、その基の部分の途中からある角度で曲げられた曲げ部分と、その曲げ部分から更に曲げられて前記基の部分と平行になるように曲げられた平坦部分とからなり、前記リード部材における前記基の部分の上面と前記平坦部分の下面との間の距離をT1とし、前記リード部材の前記平坦部分の厚みをT2とし、前記基の部分の下面と前記平坦部分の前記下面との間の距離をT3とするとき、T2=2×T1、T1=T3となるように、前記リード部材が曲げられていることを特徴とするリード部材。
【選択図】 図1
Description
[実施形態1]
図1により本発明の実施形態1について説明する。図1は、本発明に係る表面実装型半導体装置100の概観の実施形態1を説明する図である。この実施形態1では、図示しない銅又は銅をニッケルメッキで被覆した金属など導電性の良好な金属材料からなるリードフレームを用いて、その搭載位置に不図示の半導体素子をハンダ付けし、エポキシ系樹脂のようなモールド樹脂1でモールドした後、リードフレームを所定箇所で切断して個々の表面実装型半導体装置100としたものである。表面実装型半導体装置100は、上方から見てほぼ長方形である立方体であり、図1に示すように、長手方向の両端からリード部材2、3が延びている。
図2に示す実施形態2にかかる表面実装型半導体装置200は、図1に示した表面実装型半導体装置100のモールド樹脂1の内部構造の一例を示している。リード部材2、3の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂1との関係も同じであるが、リード部材3の基の部分3aの上面には、半導体素子4が通常の方法でハンダ付けされている。半導体素子4の上面は結線部材5の一端がハンダ付けされ、結線部材5の他端はリード部材2の基の部分2aの上面にハンダ付けされる。半導体素子4は、PN接合を有するプレーナー型又はメサ型のダイオードチップ、ショットキーバリアダイオード(SBD)素子、あるいはFETチップ又はIGBTチップなどである。
図5に示す実施形態3にかかる表面実装型半導体装置300は、図1に示した表面実装型半導体装置100のモールド樹脂1の内部構造の一例を示しており、リード部材2、3の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂1との関係も同じである。リード部材3の基の部分3aの上面には、半導体素子4が通常の方法でハンダ付けされている。半導体素子4の上面にはワイヤボンディング6の一端がボンディングされており、ボンディングワイヤ6の他端はリード部材2の基の部分2aの上面にボンディングされる。リード部材2、3にはそれぞれ小貫通孔2h、3hが備えられており、これらは前述したように、リード部材2、3の下側に位置するモールド樹脂を上側に位置するモールド樹脂1に結合する働きを行い、リード部材2、3の下側に位置するモールド樹脂が剥がれ難くしている。なお、ボンディング方法は通常の方法で行われるので詳述しない。
図6に示す実施形態4にかかる表面実装型半導体装置400は、図1に示した表面実装型半導体装置100のモールド樹脂1の内部構造の一例を示しており、リード部材3の曲げ構造及び寸法は図1のものと同じであり、モールド樹脂1との関係も同じである。リード部材2はモールド樹脂1から露出した部分については図1に示したリード部材2と曲げ構造及び寸法は同じであり、モールド樹脂1との関係も同じであるが、基の部分2aが前述の結線部材の働きを行う構造となっている。基の部分2aは、途中から曲げられた傾斜部2eと基の部分2aに平行になる素子固着部2fとからなる。素子固着部2fは、図4に示した結線部材5における貫通孔5gと同様な貫通孔2g、貫通孔2gの周囲を下側に突出した突出部2iが形成されている。
2・・・リード部材
2a・・・基の部分
2b・・・曲げ部分
2c・・・平坦部
2e・・・突起部
2g・・・貫通孔
2h・・・小貫通孔
3・・・リード部材
3a・・・基の部分
3b・・・曲げ部分
3c・・・平坦部分
4・・・半導体素子
5・・・結線部材
6・・・ボンディングワイヤ
Claims (4)
- 電子部品に用いられるリード部材において、
前記リード部材は、基の部分と、該基の部分の途中からある角度で曲げられた曲げ部分と、その曲げ部分から更に曲げられて前記基の部分と平行になるように曲げられた平坦部分とからなり、
前記リード部材における前記基の部分の上面と前記平坦部分の下面との間の距離をT1とし、前記リード部材の前記平坦部分の厚みをT2とし、前記基の部分の下面と前記平坦部分の前記下面との間の距離をT3とするとき、T2=2×T1、T1=T3となるように、前記リード部材が曲げられていることを特徴とするリード部材。 - 請求項1に記載のリード部材を一対用いている表面実装型半導体装置において、
前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、
前記リード部材の少なくとも一方の前記基の部分が、0.1mm〜0.5mmの範囲内で露出するように電気絶縁性樹脂で被覆されていることを特徴とする表面実装型半導体装置。 - 請求項1に記載のリード部材を一対用いている表面実装型半導体装置において、
前記リード部材を、それぞれの前記基の部分が僅かな距離を隔てて位置するように配置すると共に、前記リード部材の一方に半導体素子の一方面を搭載してハンダ付けし、前記半導体素子の他方面を、直接又は間接的に前記リード部材の他方にハンダ付けし、
前記リード部材の前記曲げ部分までが前記電気絶縁樹脂で被覆され、前記リード部材の前記平坦部分が前記電気絶縁性樹脂から露出するように被覆されていることを特徴とする表面実装型半導体装置。 - 請求項2又は請求項3の発明において、
前記半導体素子の他方面は、結線部材にハンダ付けされ、かつ該結線部材は前記リード部材の他方にハンダ付けされており、
前記結線部材は、前記半導体素子の他方面にハンダ付けされる部分と前記リード部材の他方にハンダ付けされる部分との間に弾性曲げ部分を備えることを特徴とする表面実装型半導体装置。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008182074A (ja) * | 2007-01-25 | 2008-08-07 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012182253A (ja) * | 2011-02-28 | 2012-09-20 | Sanken Electric Co Ltd | 半導体装置 |
JP2017079228A (ja) * | 2015-10-19 | 2017-04-27 | 株式会社三社電機製作所 | 半導体素子用端子 |
JP2017168553A (ja) * | 2016-03-15 | 2017-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2018019110A (ja) * | 2017-11-02 | 2018-02-01 | ローム株式会社 | 半導体装置 |
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JPH0357251A (ja) * | 1989-07-26 | 1991-03-12 | Hitachi Ltd | 半導体装置 |
JPH06275627A (ja) * | 1993-03-17 | 1994-09-30 | Rohm Co Ltd | モールド型半導体装置およびその製造方法 |
JPH11340377A (ja) * | 1998-05-22 | 1999-12-10 | Matsushita Electron Corp | 表面実装型半導体装置 |
JP2003318344A (ja) * | 2002-04-22 | 2003-11-07 | Sanyo Electric Co Ltd | 半導体装置 |
JP2004146488A (ja) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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JPH0357251A (ja) * | 1989-07-26 | 1991-03-12 | Hitachi Ltd | 半導体装置 |
JPH06275627A (ja) * | 1993-03-17 | 1994-09-30 | Rohm Co Ltd | モールド型半導体装置およびその製造方法 |
JPH11340377A (ja) * | 1998-05-22 | 1999-12-10 | Matsushita Electron Corp | 表面実装型半導体装置 |
JP2003318344A (ja) * | 2002-04-22 | 2003-11-07 | Sanyo Electric Co Ltd | 半導体装置 |
JP2004146488A (ja) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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JP2008182074A (ja) * | 2007-01-25 | 2008-08-07 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012182253A (ja) * | 2011-02-28 | 2012-09-20 | Sanken Electric Co Ltd | 半導体装置 |
JP2017079228A (ja) * | 2015-10-19 | 2017-04-27 | 株式会社三社電機製作所 | 半導体素子用端子 |
JP2017168553A (ja) * | 2016-03-15 | 2017-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2018019110A (ja) * | 2017-11-02 | 2018-02-01 | ローム株式会社 | 半導体装置 |
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