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JP2006060050A - Connection device of semiconductor light emitting element, and semiconductor light emitting device using it - Google Patents

Connection device of semiconductor light emitting element, and semiconductor light emitting device using it Download PDF

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Publication number
JP2006060050A
JP2006060050A JP2004240908A JP2004240908A JP2006060050A JP 2006060050 A JP2006060050 A JP 2006060050A JP 2004240908 A JP2004240908 A JP 2004240908A JP 2004240908 A JP2004240908 A JP 2004240908A JP 2006060050 A JP2006060050 A JP 2006060050A
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conductor
semiconductor light
light emitting
hole
emitting element
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Japanese (ja)
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Yukio Watanabe
幸雄 渡辺
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Toshiba Corp
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Toshiba Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide the connection device of a semiconductor light emitting element having an enough heat dissipation characteristic and a semiconductor light emitting device using it. <P>SOLUTION: The connection device of a semiconductor light emitting element comprises a package composed of a cylindrical first conductor 11 on an outer periphery side surface of which a spiral first groove 21 is formed and in which a first through hole 20 is formed, and a second conductor 12 which is fitted to a first through hole 20 via insulating members 13, 14, and exposed from the first conductor 11 at its one end; and a socket 19 composed of a third conductor 16 which includes a second through hole 27 on the inner periphery side surface of which a spiral second groove 28 is formed and is threaded to the first conductor 11, and a fourth conductor 17 which is joined to the lower surface of the third conductor 16 via an insulating member 18 and makes contact with the exposed end of the second conductor 12. The semiconductor light emitting device is configured in such a way that the semiconductor light emitting element 23 is fixedly mounted to the principal surface of the conductor 12 and electrically connected to the conductor 11 via a connection conductor 24, and thereafter hermetically sealed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体発光素子の接続装置およびそれを用いた半導体発光装置に係り、特に十分な放熱特性を得るのに好適な構造を備えた半導体発光素子の接続装置およびそれを用いた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting element connecting device and a semiconductor light emitting device using the same, and more particularly to a semiconductor light emitting element connecting device having a structure suitable for obtaining sufficient heat dissipation characteristics and a semiconductor light emitting device using the same. About.

半導体発光素子、なかでも発光ダイオード(LED)は、フルカラーディスプレイ、交通・信号機器、車載用途などに幅広く用いられているが、この用途においては、特に光出力が高いものが要求されている。   Semiconductor light-emitting elements, especially light-emitting diodes (LEDs), are widely used in full-color displays, traffic / signal devices, in-vehicle applications, and the like. In this application, ones with particularly high light output are required.

近年、数百mAを超える大電流で駆動することにより高い光出力が得られる高光束LEDが注目されているが、大電流を流すことによる半導体発光素子の発熱をいかに放散するかが問題になっている。   In recent years, high luminous flux LEDs that can obtain high light output by driving with a large current exceeding several hundred mA have attracted attention. However, it is a problem how to dissipate the heat generated by the semiconductor light-emitting element caused by flowing a large current. ing.

従来、LEDを一体に具備するパッケージをソケット体に押し込んで嵌合した半導体発光装置が知られている(例えば特許文献1参照。)。   2. Description of the Related Art Conventionally, there is known a semiconductor light emitting device in which a package integrally including LEDs is pushed into a socket body and fitted (see, for example, Patent Document 1).

特許文献1に開示された半導体発光装置では、同心状の内部導電体と外部導電体が絶縁フィルムを介してしまりばめ(press fit)によって固定されたパッケージと、このパッケージが押し込みにより挿入される放熱翼を具備したソケット体とを有している。   In the semiconductor light emitting device disclosed in Patent Document 1, a package in which concentric internal conductors and external conductors are fixed by press fit through an insulating film, and the package is inserted by pressing. And a socket body provided with heat radiating blades.

内部導電体は電気接続端と、この電機接続端の反対側に実装表面端面を有している。電気接続端にLEDチップが固定され、LEDチップはボンディングワイヤを介して外部導体に接続されている。   The internal conductor has an electrical connection end and a mounting surface end face on the opposite side of the electrical connection end. An LED chip is fixed to the electrical connection end, and the LED chip is connected to an external conductor via a bonding wire.

然しながら、特許文献1に開示された半導体発光装置では、パッケージがソケット体に押し込まれているだけなので、パッケージおよびソケット体の寸法誤差によっては必ずしも十分な接触が得られないという問題がある。   However, in the semiconductor light emitting device disclosed in Patent Document 1, since the package is only pushed into the socket body, there is a problem that sufficient contact cannot always be obtained depending on the dimensional error of the package and the socket body.

従って、大電流駆動による半導体発光素子の発熱を放散するだけの十分な放熱特性が得られない恐れがある。   Therefore, there is a possibility that sufficient heat dissipation characteristics for radiating the heat generated by the semiconductor light emitting element due to the large current drive cannot be obtained.

また、LEDを具備するパッケージをソケット体にネジ込んで嵌合した別の半導体発光装置が知られている(例えば特許文献2参照。)。   Another semiconductor light emitting device is known in which a package including LEDs is screwed into a socket body and fitted (see, for example, Patent Document 2).

特許文献2に開示された半導体発光装置では、絶縁基板上に載置されたLEDチップを収納する鍔部と、この鍔部の一端に嵌合された発光波長にたいして透明な保護カバーと、この鍔部の他端に嵌合した口金とを有するパッケージと、この口金をネジ込むソケット体を有している。   In the semiconductor light emitting device disclosed in Patent Document 2, a collar portion that houses an LED chip placed on an insulating substrate, a protective cover that is transparent to the emission wavelength fitted to one end of the collar portion, and the collar A package having a base fitted to the other end of the part, and a socket body into which the base is screwed.

LEDチップの一方の電極は配線を介して口金の外周側面のネジ状部に接続され、他方の電極は配線を介して口金の底部の電極に電気的接続されている。   One electrode of the LED chip is connected to the screw-like portion on the outer peripheral side surface of the base through wiring, and the other electrode is electrically connected to the electrode at the bottom of the base through wiring.

然しながら、特許文献2に開示された半導体発光装置では、所謂白熱電球の形状をしているので、パッケージとソケット体との接触面積が少なく、大電流駆動による半導体発光素子の発熱を放散するだけの十分な放熱特性が得られない問題がある。
特開2001−257301号公報(3−5頁、図1) 特開2003−173703号公報(3頁、図3)
However, since the semiconductor light emitting device disclosed in Patent Document 2 has a so-called incandescent bulb shape, the contact area between the package and the socket body is small, and only the heat generated by the semiconductor light emitting element due to the large current drive is dissipated. There is a problem that sufficient heat dissipation characteristics cannot be obtained.
JP 2001-257301 A (page 3-5, FIG. 1) JP 2003-173703 A (page 3, FIG. 3)

本発明は、十分な放熱特性が得られる半導体発光素子の接続装置およびそれを用いた半導体発光装置を提供する。   The present invention provides a connection device for a semiconductor light-emitting element capable of obtaining sufficient heat dissipation characteristics and a semiconductor light-emitting device using the same.

本発明の一態様の半導体発光素子の接続装置では、外周側面に螺旋状の第1溝が形成され、内部に第1貫通孔が形成された第1導電体と、前記第1貫通孔に絶縁部材を介して嵌合され、一端部が前記第1導電体から露呈された第2導電体とを具備するパッケージと、内周側面に螺旋状の第2溝が形成された第2貫通孔を有し、且つ前記第1導電体に螺合された第3導電体と、前記第3導電体に絶縁部材を介して接合され、且つ前記第2導電体の露呈端部と接触する第4導電体とを具備するソケット体と、を有することを特徴としている。   In the connection device for a semiconductor light emitting element of one embodiment of the present invention, a first conductor having a spiral first groove formed on the outer peripheral side surface and having a first through hole formed therein is insulated from the first through hole. A package including a second conductor that is fitted through a member and has one end exposed from the first conductor, and a second through hole in which a spiral second groove is formed on an inner peripheral side surface. A third conductor that is screwed to the first conductor, and a fourth conductor that is joined to the third conductor via an insulating member and that is in contact with the exposed end portion of the second conductor. And a socket body including the body.

また、本発明の別の一態様の半導体発光素子の接続装置を用いた半導体発光装置では、外周側面に螺旋状の第1溝が形成され、内部に第1貫通孔が形成された筒状の第1導電体と、前記第1貫通孔に絶縁部材を介して嵌合され、一端部が前記第1導電体か露呈された第2導電体とを具備する複数のパッケージと、内周側面に螺旋状の第2溝が形成された多数の第2貫通孔を有し、且つ前記各第2貫通孔に前記各パッケージの前記1導電体がそれぞれ螺合された第3導電体と、前記第3導電体に絶縁部材を介して接合され、且つ前記各第2導電体の露呈端部とそれぞれ接触する第4導電体とを具備するソケット体と、前記各パッケージの前記第2導電体の主面にそれぞれ固着された半導体発光素子と、前記各半導体発光素子を前記各第1導電体にそれぞれ電気的接続するための接続導体と、前記各半導体発光素子および前記各接続導体をそれぞれ気密封止する手段と、を有することを特徴としている。   Moreover, in the semiconductor light emitting device using the semiconductor light emitting element connection device according to another aspect of the present invention, a cylindrical shape in which a spiral first groove is formed on the outer peripheral side surface and a first through hole is formed inside. A plurality of packages each including a first conductor, a second conductor fitted into the first through-hole via an insulating member and having one end exposed from the first conductor; A third conductor having a plurality of second through holes formed with spiral second grooves, and the first conductors of the packages screwed into the second through holes; A socket body comprising a fourth conductor joined to the three conductors via an insulating member and in contact with the exposed end of each of the second conductors, and a main body of the second conductor of each of the packages Semiconductor light-emitting elements each fixed to a surface, and each semiconductor light-emitting element connected to each first conductor A connection conductor for electrically connecting each is characterized by having a means for hermetically sealing each said respective semiconductor light emitting element and the respective connection conductor.

本発明によれば、十分な放熱特性が得られる半導体発光素子の接続装置およびそれを用いた半導体発光装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the connection apparatus of the semiconductor light-emitting element which can obtain sufficient heat dissipation characteristic, and a semiconductor light-emitting device using the same can be provided.

以下、本発明の実施例について図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図1は本発明の実施例1に係る半導体発光素子の接続装置を用いた半導体発光装置の構造を示す図で、図1(a)はその平面図、図1(b)は図1(a)のA−A線に沿って切断し矢印方向に眺めた断面図、図2は半導体発光装置の組み立て方法を工程順に示す図である。   1A and 1B are diagrams showing a structure of a semiconductor light emitting device using a semiconductor light emitting element connection device according to a first embodiment of the present invention. FIG. 1A is a plan view thereof, and FIG. FIG. 2 is a view showing a method for assembling a semiconductor light emitting device in the order of steps.

図1に示すように、本実施例の半導体発光装置10は、第1導電体11と第2導電体12が絶縁部材13、14を介して嵌合されたパッケージ15と、第3導電体16と第4導電体17が絶縁部材18を介して接合されたソケット体19とを有している。   As shown in FIG. 1, the semiconductor light emitting device 10 of this embodiment includes a package 15 in which a first conductor 11 and a second conductor 12 are fitted via insulating members 13 and 14, and a third conductor 16. And a socket body 19 in which the fourth conductor 17 is joined via an insulating member 18.

パッケージ15の第1導電体11は、円形の第1貫通孔20を有する筒状に形成され、その主面、例えば上面側の外周側面が多角形状、例えば六角形状に形成され、残部の外周側面が円形状に形成されている。また、第1導電体11の残部の外周側面には、螺旋状の第1溝21、例えば雄ネジが形成され、上面側の第1貫通孔20の内周側面には、筒軸方向に突出する凸部22が形成されている。   The first conductor 11 of the package 15 is formed in a cylindrical shape having a circular first through hole 20, and its main surface, for example, the outer peripheral side on the upper surface side is formed in a polygonal shape, for example, a hexagonal shape, and the remaining outer peripheral side surface Is formed in a circular shape. A spiral first groove 21, for example, a male screw, is formed on the outer peripheral side surface of the remaining portion of the first conductor 11, and protrudes in the cylinder axis direction on the inner peripheral side surface of the first through hole 20 on the upper surface side. A convex portion 22 is formed.

凸部22の主面、例えば上面には、半導体発光素子23を外部に電気的接続するための接続導体24、例えば金ワイヤを接続するための接続パッド25が形成されている。   A connection conductor 24 for electrically connecting the semiconductor light emitting element 23 to the outside, for example, a connection pad 25 for connecting a gold wire is formed on the main surface, for example, the upper surface of the convex portion 22.

パッケージ15の第2導電体12は、第1導電体11の第1貫通孔20の断面と同じ円形状で、且つ第1貫通孔20の内径より若干小さい外径を有する円柱状に形成されている。   The second conductor 12 of the package 15 is formed in a cylindrical shape having the same circular shape as the cross section of the first through hole 20 of the first conductor 11 and an outer diameter slightly smaller than the inner diameter of the first through hole 20. Yes.

また、第2導電体12は、その主面、例えば上面に凹部26を有している。この凹部26は、第2導電体12の上面側に末広がり状、例えば逆台形状の断面構造に形成され、その内面が傾斜面や放物線状の湾曲面をなして、底面に導電性接着剤、または共晶接合により固着される半導体発光素子23から放射される光を第2導電体12の上面側へ導出するようになっている。   Moreover, the 2nd conductor 12 has the recessed part 26 in the main surface, for example, the upper surface. The concave portion 26 is formed in a divergent shape on the upper surface side of the second conductor 12, for example, an inverted trapezoidal cross-sectional structure, and its inner surface forms an inclined surface or a parabolic curved surface, and a conductive adhesive on the bottom surface, Alternatively, light emitted from the semiconductor light emitting element 23 fixed by eutectic bonding is led out to the upper surface side of the second conductor 12.

第1および第2導電体11、12は、例えばニッケルおよび銀がメッキされた銅であり、絶縁部材13、14は、例えば熱伝導性シリコン樹脂、更には、熱伝導性シリコン樹脂に熱伝導性グリースを塗布したものが望ましい。   The first and second conductors 11 and 12 are, for example, copper plated with nickel and silver. The insulating members 13 and 14 are, for example, thermally conductive silicon resin, and further thermally conductive to thermally conductive silicon resin. It is desirable to apply grease.

そして、第2導電体12は、筒状の絶縁部材13およびワッシャー状の絶縁部材14を介して第1導電体11の第1貫通孔20に嵌合されてなり、第2導電体12の外周側面は絶縁部材13を介して第1導電体11の内周側面に内接し、且つ第2導電体の上面は絶縁部材14を介して凸部22の主面と反対の下面に当接している。   The second conductor 12 is fitted into the first through hole 20 of the first conductor 11 via the cylindrical insulating member 13 and the washer-like insulating member 14, and the outer periphery of the second conductor 12 The side surface is inscribed in the inner peripheral side surface of the first conductor 11 through the insulating member 13, and the upper surface of the second conductor is in contact with the lower surface opposite to the main surface of the convex portion 22 through the insulating member 14. .

ソケット体19の第3導電体16は円形の第2貫通孔27を有し、第2貫通孔27の内周側面に第2導電体12の第1溝21と螺合する螺旋状の第2溝28、例えば雌ネジを有している。   The third conductor 16 of the socket body 19 has a circular second through hole 27, and a second spiral member that is screwed into the first groove 21 of the second conductor 12 on the inner peripheral side surface of the second through hole 27. It has a groove 28, for example a female screw.

ソケット体19の第4導電体17は板状に形成され、第3および第4導電体16、17は、例えばニッケルおよび銀がメッキされた銅からなる。   The fourth conductor 17 of the socket body 19 is formed in a plate shape, and the third and fourth conductors 16 and 17 are made of copper plated with nickel and silver, for example.

ソケット体19の絶縁部材18は、例えば両面に銀ロウがコーティングされたアルミナ板からなり、中央部に第2貫通孔27より大きい円形の第3貫通孔29を有している。   The insulating member 18 of the socket body 19 is made of, for example, an alumina plate coated with silver brazing on both sides, and has a circular third through hole 29 larger than the second through hole 27 at the center.

そして、第4導電体17上に絶縁部材18を介して第3導電体16を載置し、且つ第3導電体16の第2貫通孔27と絶縁部材18の第3貫通孔29とを同心状に配置し、銀ロウが溶解する温度、例えば700℃に加熱して徐冷することにより、第4導電体17上に絶縁部材18を介して第3導電体16が接合されてなる。   The third conductor 16 is placed on the fourth conductor 17 via the insulating member 18, and the second through hole 27 of the third conductor 16 and the third through hole 29 of the insulating member 18 are concentric. The third conductor 16 is joined to the fourth conductor 17 via the insulating member 18 by heating to a temperature at which the silver solder melts, for example, 700 ° C. and gradually cooling.

図2に示すように、半導体発光装置10の組み立ては、最初に第2導電体12の凹部26の底面に半導体発光素子23を導電性接着剤、または共晶接合により固着する。次に、第2導電体12を筒状の絶縁部材13に挿入し、第2導電体12の上面にワッシャー状の絶縁部材14を載置した後、第2導電体12を第1導電体11の第1貫通孔20に挿入する。   As shown in FIG. 2, in assembling the semiconductor light emitting device 10, first, the semiconductor light emitting element 23 is fixed to the bottom surface of the recess 26 of the second conductor 12 by a conductive adhesive or eutectic bonding. Next, after inserting the second conductor 12 into the cylindrical insulating member 13 and placing the washer-like insulating member 14 on the upper surface of the second conductor 12, the second conductor 12 is replaced with the first conductor 11. The first through hole 20 is inserted.

これにより、第2導電体12は、筒状の絶縁部材13を介して第1導電体11の内周側面に内接し、ワッシャー状の絶縁部材14を介して凸部22の下面に当接し、第1導電体11に電気的絶縁されて嵌合される。このとき、第2導電体12の下端部は第1導電体11の下端部より突出して露呈される。   Thereby, the second conductor 12 is inscribed in the inner peripheral side surface of the first conductor 11 through the tubular insulating member 13, and is in contact with the lower surface of the convex portion 22 through the washer-like insulating member 14. The first conductor 11 is electrically insulated and fitted. At this time, the lower end portion of the second conductor 12 protrudes from the lower end portion of the first conductor 11 and is exposed.

次に、半導体発光素子23を接続導体(図示せず)を介して接続パッド25に接続した後、凹部26内および凹部26の上方の第1貫通孔20内に発光波長に対して透明な樹脂(図示せず)を充填し、半導体発光素子23および接続導体(図示せず)を気密封止する。   Next, after the semiconductor light emitting element 23 is connected to the connection pad 25 via a connection conductor (not shown), the resin transparent to the emission wavelength in the recess 26 and in the first through hole 20 above the recess 26. (Not shown) is filled, and the semiconductor light emitting element 23 and the connection conductor (not shown) are hermetically sealed.

次に、第1導電体11の上面に半導体発光素子23から放射された光を一方向へ集光するレンズ30を接着材により冠着して半導体発光素子23を一体に内蔵したパッケージ15を得る。   Next, a lens 15 that condenses light emitted from the semiconductor light emitting element 23 in one direction is attached to the upper surface of the first conductor 11 with an adhesive, thereby obtaining a package 15 in which the semiconductor light emitting element 23 is integrated. .

次に、パッケージ15の第1溝21をソケット体19の第2溝28にあてがい、締め付け工具でパッケージ15の六角形状部を回転させることにより、パッケージ15をソケット体19にネジ込む。   Next, the first groove 21 of the package 15 is applied to the second groove 28 of the socket body 19, and the package 15 is screwed into the socket body 19 by rotating the hexagonal portion of the package 15 with a tightening tool.

第2導電体12の下面が第4導電体17に当接すると、凸部22がストッパーとなり第2導電体12の上面が凸部22により押圧されるので、パッケージ15がソケット体19にネジ止めされる。   When the lower surface of the second conductor 12 comes into contact with the fourth conductor 17, the convex portion 22 becomes a stopper and the upper surface of the second conductor 12 is pressed by the convex portion 22, so that the package 15 is screwed to the socket body 19. Is done.

これにより、第1導電体11と第3導電体16が第1溝21および第2溝28を介して電気的接続され、第2導電体12と第4導電体17が当接により電気的接続され、半導体発光装置40が完成する。   As a result, the first conductor 11 and the third conductor 16 are electrically connected via the first groove 21 and the second groove 28, and the second conductor 12 and the fourth conductor 17 are electrically connected by contact. Thus, the semiconductor light emitting device 40 is completed.

即ち、第1導電体11はそれ自身で一方の配線をなし、第3導電体16を介して外部に電気的接続される。同様に、第2導電体12はそれ自信で他方の配線をなし、第4導電体17を介して外部に電気的接続される。   That is, the first conductor 11 itself constitutes one wiring and is electrically connected to the outside via the third conductor 16. Similarly, the second conductor 12 confidently forms the other wiring and is electrically connected to the outside via the fourth conductor 17.

従って、第1導電体11と第3導電体16の十分な接触面積が得られるので、第3導電体16および第4導電体17が放熱板として機能する。
その結果、半導体発光素子23の発熱が、第3導電体16および第4導電体17を介して外部に放散するので、十分な放熱特性を得ることが可能である。
Accordingly, a sufficient contact area between the first conductor 11 and the third conductor 16 can be obtained, so that the third conductor 16 and the fourth conductor 17 function as a heat sink.
As a result, the heat generated by the semiconductor light emitting element 23 is dissipated to the outside through the third conductor 16 and the fourth conductor 17, so that sufficient heat dissipation characteristics can be obtained.

図3は、半導体発光素子の接続装置を用いた集合半導体発光装置の構成を示す図で、図3(a)はその平面図、図3(b)は図3(a)のB−B線に沿って切断し、矢印方向に眺めた断面図である。   3A and 3B are diagrams showing a configuration of a collective semiconductor light-emitting device using a connection device for semiconductor light-emitting elements, in which FIG. 3A is a plan view and FIG. 3B is a BB line in FIG. It is sectional drawing which cut | disconnected along and was seen in the arrow direction.

図3に示すように、本実施例の集合半導体発光装置40では、ソケット体41は矩形板状の第3導電体42を有し、この第3導電体42には、所定の間隔を置いて多数の第2貫通孔47が形成されている。この第2貫通孔47の内周側面には、パッケージ15の第2導電体12の第1溝21と螺合する螺旋状の第2溝48、例えば雌ネジが形成されている。   As shown in FIG. 3, in the collective semiconductor light emitting device 40 of this embodiment, the socket body 41 has a rectangular plate-shaped third conductor 42, and the third conductor 42 is spaced apart by a predetermined interval. A number of second through holes 47 are formed. A spiral second groove 48, for example, a female screw, is formed on the inner peripheral side surface of the second through hole 47 so as to be screwed into the first groove 21 of the second conductor 12 of the package 15.

また、ソケット体41は、第3導電体42と同形状の矩形状に形成された絶縁部材44を有し、この絶縁部材44には第3導電体42の第2貫通孔47と対応する位置に第2貫通孔47より大きな円形の第3貫通孔49が形成されている。そして、この絶縁部材44は、第3導電体42の下面に接合されている。   In addition, the socket body 41 has an insulating member 44 formed in the same rectangular shape as the third conductor 42, and the insulating member 44 has a position corresponding to the second through hole 47 of the third conductor 42. A circular third through hole 49 larger than the second through hole 47 is formed. The insulating member 44 is bonded to the lower surface of the third conductor 42.

また、ソケット体41は、第3導電体42と同形状の矩形状に形成された板状の第4導電体43を有し、この第4導電体43は、絶縁部材44を介して第3導電体42の下面に接合されている。   The socket body 41 has a plate-like fourth conductor 43 formed in the same rectangular shape as the third conductor 42, and the fourth conductor 43 is connected to the third conductor via the insulating member 44. Bonded to the lower surface of the conductor 42.

そして、ソケット体41の各第2貫通孔47に各パッケージ15をそれぞれネジ止めすることにより、多数のパッケージ15の半導体発光素子23の一方の電極は第3導電体42に共通接続され、他方の電極は第4導電体43に共通接続される。   Then, by screwing each package 15 to each second through hole 47 of the socket body 41, one electrode of the semiconductor light emitting element 23 of many packages 15 is commonly connected to the third conductor 42, and the other The electrodes are commonly connected to the fourth conductor 43.

これにより、第3導電体42および第4導電体43は共通カソード配線及び共通アノード配線としてだけでなく、放熱板として機能するので、十分な放熱特性を有する集合半導体発光装置40を得ることが可能である。   As a result, the third conductor 42 and the fourth conductor 43 function not only as a common cathode wiring and a common anode wiring but also as a heat radiating plate, so that the collective semiconductor light emitting device 40 having sufficient heat dissipation characteristics can be obtained. It is.

図4は、図3に示した集合半導体発光装置40の等価回路を示す図である。図4に示すように、複数の半導体発光素子23のカソードKが第4導電体43を共通カソード配線とし、アノードAが第3導電体42を共通アノード配線としてそれぞれ並列接続され、抵抗45を介して電源46に接続されている。   FIG. 4 is a diagram showing an equivalent circuit of the collective semiconductor light emitting device 40 shown in FIG. As shown in FIG. 4, the cathodes K of the plurality of semiconductor light emitting elements 23 are connected in parallel with the fourth conductor 43 as a common cathode wiring and the anode A with the third conductor 42 as a common anode wiring. Connected to a power source 46.

更に、複数の集合半導体発光装置40を直列または並列接続すれば、より大型の集合半導体発光装置を容易に構成することができる。   Furthermore, if a plurality of collective semiconductor light emitting devices 40 are connected in series or in parallel, a larger collective semiconductor light emitting device can be easily configured.

以上説明したように、本実施例によれば、外周側面に螺旋状の第1溝21を形成したパッケージ15を内周側面に螺旋状の第2溝48を形成したソケット体41に嵌合しているので、パッケージ15とソケット体41の十分な接触面積が得られる。   As described above, according to the present embodiment, the package 15 in which the spiral first groove 21 is formed on the outer peripheral side surface is fitted into the socket body 41 in which the spiral second groove 48 is formed on the inner peripheral side surface. Therefore, a sufficient contact area between the package 15 and the socket body 41 can be obtained.

その結果、十分な放熱特性が得られるため、大電流で動作し、信頼性の高い半導体発光装置を提供することができる。   As a result, sufficient heat dissipation characteristics can be obtained, so that a highly reliable semiconductor light-emitting device that operates with a large current can be provided.

ここでは、多数のソケット体41を一体形成した場合について説明したが、多数のソケット体を所定の間隔で基板に載置して、各ソケット体を互いに配線を介して電気的接続しても構わない。   Here, a case where a large number of socket bodies 41 are integrally formed has been described. However, a large number of socket bodies may be placed on a substrate at a predetermined interval, and the socket bodies may be electrically connected to each other via wiring. Absent.

また、第3導電体と第4導電体が絶縁部材として銀ロウをコーティングしたアルミナ板で接合された場合について説明したが、必要な放熱特性が得られる範囲内で有機系の絶縁性接着剤、例えばエポキシ系接着剤で接合しても構わない。これによれば、接合時の熱処理温度を下げることができるので、接合工程が簡略化できる利点がある。   Moreover, although the case where the 3rd conductor and the 4th conductor were joined by the alumina board which coated silver brazing as an insulating member was demonstrated, in the range in which a required heat dissipation characteristic is acquired, an organic type insulating adhesive agent, For example, you may join with an epoxy-type adhesive agent. According to this, since the heat treatment temperature at the time of joining can be lowered, there is an advantage that the joining process can be simplified.

更に、絶縁部材が熱伝導性シリコン樹脂からなる場合について説明したが、絶縁部材は誘電体フィルムやセラミックスなどでも構わない。   Furthermore, although the case where the insulating member is made of a heat conductive silicon resin has been described, the insulating member may be a dielectric film or ceramics.

図5は本発明の実施例2に係る半導体発光素子の接続装置を用いた半導体発光装置の構成を示す図で、図5(a)はその平面図、図5(b)は図5(a)のC−C線に沿って切断し、矢印の方向から眺めた断面図である。   5A and 5B are diagrams showing a configuration of a semiconductor light emitting device using a semiconductor light emitting element connection device according to Example 2 of the present invention. FIG. 5A is a plan view thereof, and FIG. 5B is a plan view of FIG. It is a cross-sectional view taken along the line C-C in FIG.

本実施例において、上記実施例1と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。   In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

本実施例が実施例1と異なる点は、第2導電体12の上面に絶縁部材を介して接続パッドを形成したことにある。   The present embodiment is different from the first embodiment in that connection pads are formed on the upper surface of the second conductor 12 via an insulating member.

即ち、図5に示すように、半導体発光装置50は、第1導電体11の凸部54の下面と第2導電体12の上面との電気的絶縁のためのワッシャー状の絶縁部材53の主面、例えば上面に導電膜51を形成し、この導電膜51上の一部に接続パッド52を形成している。そして、第1導電体11の内周側面の凸部54は、接続パッド52を露呈し、接続パッド52に接続される接続導体24のボンディングボールを押し潰さないような大きさに形成している。   That is, as shown in FIG. 5, the semiconductor light emitting device 50 includes a main part of a washer-like insulating member 53 for electrical insulation between the lower surface of the convex portion 54 of the first conductor 11 and the upper surface of the second conductor 12. A conductive film 51 is formed on a surface, for example, an upper surface, and a connection pad 52 is formed on a part of the conductive film 51. And the convex part 54 of the internal peripheral side surface of the 1st conductor 11 is formed in the magnitude | size which does not crush the bonding ball of the connection conductor 24 which exposes the connection pad 52 and is connected to the connection pad 52. .

導電膜51は、例えば無電界メッキ法により形成された銅で、更に、ニッケルおよび銀をメッキしておくことが望ましい。   The conductive film 51 is preferably made of copper formed by, for example, electroless plating, and further plated with nickel and silver.

第1導電体11の第1貫通孔20に絶縁部材13、53を介して第2導電体12を嵌合することにより、導電膜51は凸部54の下面に当接し、半導体発光素子23は第1導電体11と電気的接続される。   By fitting the second conductor 12 into the first through hole 20 of the first conductor 11 via the insulating members 13 and 53, the conductive film 51 contacts the lower surface of the convex portion 54, and the semiconductor light emitting element 23 is It is electrically connected to the first conductor 11.

これにより、パッケージ15をソケット体19にネジ止めする場合に、第1導電体11と第2導電体12の位置関係が捩れても、接続導体24が引っ張られて断線する恐れがない利点がある。   Accordingly, when the package 15 is screwed to the socket body 19, there is an advantage that even if the positional relationship between the first conductor 11 and the second conductor 12 is twisted, the connection conductor 24 is not pulled and may be disconnected. .

絶縁部材53を第2導電体12の上面に、例えば絶縁性接着剤を用いて固着し、半導体発光素子23が接続導体24を介して接続パッド52に予め接続されていれば、半導体発光装置50の組み立て工程が簡略化され、また、組み立て後に、第2導電体12を自由に着脱できる利点がある。   If the insulating member 53 is fixed to the upper surface of the second conductor 12 using, for example, an insulating adhesive, and the semiconductor light emitting element 23 is connected in advance to the connection pad 52 via the connection conductor 24, the semiconductor light emitting device 50. The assembly process is simplified, and there is an advantage that the second conductor 12 can be freely attached and detached after the assembly.

以上説明したように、本実施例によれば、第1導電体11と第2導電体12が導電膜51介して電気的接続されるようにしたので、第1導電体11と第2導電体12の位置関係が捩れた場合でも、接続導体24が引っ張られて断線する恐れがなく、信頼性の高い半導体発光装置を提供することができる。   As described above, according to the present embodiment, the first conductor 11 and the second conductor 12 are electrically connected through the conductive film 51, so the first conductor 11 and the second conductor Even when the positional relationship of 12 is twisted, there is no fear that the connection conductor 24 is pulled and disconnected, and a highly reliable semiconductor light emitting device can be provided.

上述した実施例においては、絶縁部材13が筒状で、絶縁部材14、53がワッシャー状の場合について説明したが、本発明はこれに限定されず、絶縁部材13、14あるいは絶縁部材13、53を一体化した絶縁部材、例えば、底部に凹部26が露出するような孔を有する有底筒状の絶縁部材であっても構わない。   In the above-described embodiments, the case where the insulating member 13 is cylindrical and the insulating members 14 and 53 are washer-shaped has been described. However, the present invention is not limited to this, and the insulating members 13 and 14 or the insulating members 13 and 53 are not limited thereto. For example, a bottomed cylindrical insulating member having a hole that exposes the concave portion 26 may be used.

また、第2導電体12が円柱状の場合について説明したが、例えば図6に示すように角柱状の導電体であっても構わない。これによれば、第1導電体11と第2導電体12の位置関係が捻れることがないので、接続導体24が引っ張られて断線する恐れがない。   Moreover, although the case where the 2nd conductor 12 was cylindrical shape was demonstrated, you may be a prismatic conductor as shown, for example in FIG. According to this, since the positional relationship between the first conductor 11 and the second conductor 12 is not twisted, there is no possibility that the connection conductor 24 is pulled and disconnected.

更に、第1導電体11の主面側の外周側面が断面六角形状の場合について説明したが、締め付け工具によりパッケージ15をソケット体19にネジ込める形状であれば特に限定されず、外周側面にローレット加工を施しても構わない。   Further, the case where the outer peripheral side surface on the main surface side of the first conductor 11 has a hexagonal cross section has been described. However, there is no particular limitation as long as the package 15 can be screwed into the socket body 19 with a tightening tool. Processing may be performed.

本発明の実施例1に係る半導体発光素子の接続装置を用いた半導体発光装置の構造を示す図で、図1(a)はその平面図、図1(b)は図1(a)のA−A線に沿って切断し、矢印方向に眺めた断面図。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the structure of the semiconductor light-emitting device using the connection device of the semiconductor light-emitting device based on Example 1 of this invention, Fig.1 (a) is the top view, FIG.1 (b) is A of Fig.1 (a). Sectional drawing cut | disconnected along the A line and looked at the arrow direction. 本発明の実施例1に係る半導体発光素子の接続装置を用いた半導体発光装置の製造工程を順に示す図。The figure which shows the manufacturing process of the semiconductor light-emitting device using the connection apparatus of the semiconductor light-emitting device based on Example 1 of this invention in order. 本発明の実施例1に係る半導体発光素子の接続装置を用いた集合半導体発光装置を示す図で、図3(a)はその平面図、図3(b)は図3(a)のB−B線に沿って切断し、矢印方向に眺めた断面図。FIG. 3A is a plan view of the collective semiconductor light-emitting device using the semiconductor light-emitting element connection device according to Example 1 of the present invention, and FIG. Sectional drawing cut | disconnected along B line and looked at the arrow direction. 本発明の実施例1に係る半導体発光素子の接続装置を用いた集合半導体発光装置の等価回路を示す図。The figure which shows the equivalent circuit of the collective semiconductor light-emitting device using the connection device of the semiconductor light-emitting element which concerns on Example 1 of this invention. 本発明の実施例2に係る半導体発光素子の接続装置を用いた半導体発光装置の構造を示す図で、図5(a)はその平面図、図5(b)は図5(a)のC−C線に沿って切断し、矢印方向に眺めた断面図である。FIG. 5A is a plan view of a semiconductor light emitting device using a semiconductor light emitting element connection device according to Example 2 of the present invention, and FIG. 5B is a plan view of FIG. It is sectional drawing cut | disconnected along the -C line and looked at the arrow direction. 本発明の実施例に係る半導体発光素子の接続装置を用いた半導体発光装置の他の構造を示す平面図。The top view which shows the other structure of the semiconductor light-emitting device using the connection apparatus of the semiconductor light-emitting element based on the Example of this invention.

符号の説明Explanation of symbols

10、50、60 半導体発光装置
11 第1導電体
12 第2導電体
13、14、17、44、53、63 絶縁部材
15 パッケージ
16、42 第3導電体
18、43 第4導電体
19、41 ソケット体
20 第1貫通孔
21 第1溝
22、54、64 凸部
23 半導体発光素子
24 接続導体
25、52、62 接続パッド
26 凹部
27、47 第2貫通孔
28、48 第2溝
29、49 第3貫通孔
30 レンズ
40 集合半導体発光装置
45 抵抗
46 電源
51、61 導電膜
10, 50, 60 Semiconductor light emitting device 11 First conductor 12 Second conductor 13, 14, 17, 44, 53, 63 Insulating member 15 Package 16, 42 Third conductor 18, 43 Fourth conductor 19, 41 Socket body 20 First through hole 21 First groove 22, 54, 64 Protruding portion 23 Semiconductor light emitting element 24 Connection conductor 25, 52, 62 Connection pad 26 Recessed portion 27, 47 Second through hole 28, 48 Second groove 29, 49 Third through hole 30 Lens 40 Collective semiconductor light emitting device 45 Resistor 46 Power supply 51, 61 Conductive film

Claims (5)

外周側面に螺旋状の第1溝が形成され、内部に第1貫通孔が形成された筒状の第1導電体と、前記第1貫通孔に絶縁部材を介して嵌合され、一端部が前記第1導電体から露呈された第2導電体とを具備するパッケージと、
内周側面に螺旋状の第2溝が形成された第2貫通孔を有し、且つ前記第1導電体に螺合された第3導電体と、前記第3導電体に絶縁部材を介して接合され、且つ前記第2導電体の露呈端部と接触する第4導電体とを具備するソケット体と
を有することを特徴とする半導体発光素子の接続装置。
A cylindrical first conductor in which a spiral first groove is formed on the outer peripheral side surface and a first through hole is formed inside is fitted to the first through hole via an insulating member, and one end portion is A package comprising a second conductor exposed from the first conductor;
A third conductor having a second through hole in which a spiral second groove is formed on an inner peripheral side surface and screwed into the first conductor, and an insulating member interposed between the third conductor and the third conductor A connection device for a semiconductor light emitting element, comprising: a socket body that includes a fourth conductor that is bonded and that contacts the exposed end portion of the second conductor.
外周側面に螺旋状の第1溝が形成され、内部に第1貫通孔が形成された筒状の第1導電体と、前記第1貫通孔に絶縁部材を介して嵌合され、一端部が前記第1導電体から露呈された第2導電体とを具備するパッケージと、
内周側面に螺旋状の第2溝が形成された第2貫通孔を有し、且つ前記第1導電体に螺合された第3導電体と、前記第3導電体に絶縁部材を介して接合され、且つ前記第2導電体の露呈端部と接触する第4導電体とを具備するソケット体と、
前記パッケージの前記第2導電体の主面に固着された半導体発光素子と、
前記半導体発光素子を前記第1導電体に電気的接続するための接続導体と、
前記半導体発光素子および前記接続導体を気密封止する手段と
を有することを特徴とする半導体発光装置。
A cylindrical first conductor in which a spiral first groove is formed on the outer peripheral side surface and a first through hole is formed inside is fitted to the first through hole via an insulating member, and one end portion is A package comprising a second conductor exposed from the first conductor;
A third conductor having a second through hole in which a spiral second groove is formed on an inner peripheral side surface and screwed into the first conductor, and an insulating member interposed between the third conductor and the third conductor A socket body comprising a fourth conductor joined and in contact with the exposed end of the second conductor;
A semiconductor light emitting element fixed to the main surface of the second conductor of the package;
A connection conductor for electrically connecting the semiconductor light emitting element to the first conductor;
A semiconductor light emitting device comprising: a means for hermetically sealing the semiconductor light emitting element and the connection conductor.
外周側面に螺旋状の第1溝が形成され、内部に第1貫通孔が形成された筒状の第1導電体と、前記第1貫通孔に絶縁部材を介して嵌合され、一端部が前記第1導電体から露呈された第2導電体とを具備する複数のパッケージと、
内周側面に螺旋状の第2溝が形成された多数の第2貫通孔を有し、且つ前記各第2貫通孔に前記各パッケージの前記第1導電体がそれぞれ螺合された第3導電体と、前記第3導電体の主面と反対の面に絶縁部材を介して接合され、且つ前記各第2導電体の露呈端部とそれぞれ接触する第4導電体とを具備するソケット体と、
前記各パッケージの前記第2導電体の主面にそれぞれ固着された半導体発光素子と、
前記各半導体発光素子を前記各第1導電体にそれぞれ電気的接続する接続導体と、
前記各半導体発光素子および前記各接続導体をそれぞれ気密封止する手段と
を有することを特徴とする半導体発光装置。
A cylindrical first conductor in which a spiral first groove is formed on the outer peripheral side surface and a first through hole is formed inside is fitted to the first through hole via an insulating member, and one end portion is A plurality of packages comprising a second conductor exposed from the first conductor;
A third conductive material having a plurality of second through holes each having a spiral second groove formed on an inner peripheral side surface, and the first conductors of the packages screwed into the second through holes. A socket body comprising a body and a fourth conductor bonded to a surface opposite to the main surface of the third conductor via an insulating member and in contact with the exposed end portion of each second conductor; ,
A semiconductor light emitting element fixed to the main surface of the second conductor of each package;
A connection conductor for electrically connecting each of the semiconductor light emitting elements to each of the first conductors;
And a means for hermetically sealing each of the semiconductor light emitting elements and the connection conductors.
前記第1貫通孔の内周側面に、前記第2導電体の主面が前記絶縁部材を介して当接する凸部が更に形成されていることを特徴とする請求項2または請求項3に記載の半導体発光装置。   The convex part which the main surface of a said 2nd conductor contact | abuts via the said insulating member is further formed in the inner peripheral side surface of a said 1st through-hole. Semiconductor light emitting device. 前記第1導電体の主面側の外周側面が断面多角形状に形成されていることを特徴とする請求項2乃至請求項4のいずれか1項に記載の半導体発光装置。   5. The semiconductor light emitting device according to claim 2, wherein an outer peripheral side surface on a main surface side of the first conductor is formed in a polygonal cross section.
JP2004240908A 2004-08-20 2004-08-20 Connection device of semiconductor light emitting element, and semiconductor light emitting device using it Pending JP2006060050A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009289906A (en) * 2008-05-28 2009-12-10 Hamamatsu Photonics Kk Ultraviolet ray irradiation device and ultraviolet ray irradiation unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009289906A (en) * 2008-05-28 2009-12-10 Hamamatsu Photonics Kk Ultraviolet ray irradiation device and ultraviolet ray irradiation unit

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