JP2005340656A - High-frequency integrated circuit device, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency integrated circuit device wherein signal interference between a plurality of high-frequency elements is reduced, and to provide a method for manufacturing the same. <P>SOLUTION: The high-frequency integrated circuit device 1 comprises a substrate 10 whereon wiring patterns 13 and 14 are formed, a plurality of high-frequency elements 11a and 11b mounted on the surface of the substrate 10, and an insulating resin 12 for encapsulating the high-frequency elements 11a and 11b. In the insulating resin 12, an isolating trench 16 is provided to extend at least partly in between the high-frequency elements 11a and 11b. Thereby, isolation between the high-frequency elements 11a and 11b is securely established for a reduction in signal interference between the high-frequency elements 11a and 11b. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a high frequency integrated circuit device and a manufacturing method thereof.

In recent years, the role played by information communication has become extremely large, and accordingly, the demand for mobile communication systems is rapidly increasing. Under these circumstances, mobile phones and cordless phones are required to reduce the size of high-frequency circuit blocks due to demands for system miniaturization, multi-functionality, and service improvement (dual band, triple band, etc.). Therefore, miniaturization and integration of devices constituting them are extremely important. Conventionally, a high-frequency power amplifier, which is one of high-frequency circuit block devices used in mobile phones, has been modularized and miniaturized using a dielectric multilayer substrate. Also, the antenna switch element has been reduced in size by using a chip size shrink or a chip size package (CSP). Recently, for further miniaturization and integration of devices, a high frequency integrated circuit device in which a plurality of high frequency elements are integrated in one package has been developed (for example, Patent Document 1).
JP-A-10-371060

  However, when the high-frequency elements are integrated, capacitive coupling is likely to occur in the high-frequency region through the insulating resin used for sealing the high-frequency elements due to the narrowing of the distance between the high-frequency elements. As a result, signal interference between high-frequency elements causes deterioration of high-frequency characteristics, and problems such as cross modulation and noise in the reception band become significant.

  The present invention provides a high-frequency integrated circuit device that can reduce signal interference between a plurality of high-frequency elements, and a method for manufacturing the same.

  The first high-frequency integrated circuit device of the present invention has a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements, In the insulating resin, a separation groove is provided in at least a part between the plurality of high-frequency elements.

  The second high-frequency integrated circuit device of the present invention has a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements, The insulating resin is characterized in that a through hole is provided in at least a part between the plurality of high-frequency elements.

  According to a first method of manufacturing a high frequency integrated circuit device of the present invention, a substrate on which a wiring pattern is formed is prepared, a plurality of high frequency elements are mounted on the surface of the substrate, and the high frequency elements are sealed using an insulating resin. In the insulating resin, separation grooves are formed in at least a part between the plurality of high-frequency elements.

  According to a second method of manufacturing a high frequency integrated circuit device of the present invention, a substrate on which a wiring pattern is formed is prepared, a plurality of high frequency elements are mounted on the surface of the substrate, and the high frequency elements are sealed using an insulating resin. In the insulating resin, a through-hole is formed in at least a part between the plurality of high-frequency elements.

  In the high-frequency integrated circuit device of the present invention, in the insulating resin, a separation groove or a through hole is provided in at least a part between a plurality of high-frequency elements, so that isolation is ensured and signal interference between the high-frequency elements is prevented. can do.

  In the manufacturing method of the high frequency integrated circuit device of the present invention, the isolation groove or the through hole is formed after sealing the high frequency element using an insulating resin, and therefore the high frequency integrated circuit device of the present invention can be easily formed. it can.

  The first high-frequency integrated circuit device of the present invention includes a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements. As the substrate, for example, a general-purpose substrate such as a resin substrate or a ceramic substrate, a lead frame, or the like can be used. The wiring pattern can be formed by a known method. For example, the wiring pattern can be formed by etching a metal foil provided on the surface of the substrate by hot pressing or the like by a known photolithography method. As the high-frequency element, for example, a transmission power amplification element, a transmission element, a reception element, a switch element, and the like can be suitably used. As a method for mounting the high-frequency element on the substrate, a known method can be used. For example, the high-frequency element can be mounted by wire bonding or the like. The insulating resin is not particularly limited, but a thermosetting resin such as an epoxy resin is preferably used.

  In the first high-frequency integrated circuit device of the present invention, the insulating resin is provided with a separation groove in at least a part between the plurality of high-frequency elements. Thereby, the isolation between several high frequency elements is ensured, and the signal interference between high frequency elements can be prevented.

  In addition, the cross-sectional shape in the width direction of the separation groove is preferably formed in a V shape or a U shape from the viewpoint of workability. Further, it is preferable that the wiring pattern for electrically connecting the high-frequency elements divided by the separation groove is formed inside the substrate. Thereby, the process of a separation groove becomes easy. In addition, the method for providing the wiring pattern inside the substrate is, for example, by placing another resin substrate on the resin substrate on which the wiring pattern is formed, and compressing the substrate by hot pressing to bond the substrates. Good.

  The first high-frequency integrated circuit device of the present invention preferably further comprises a metal thin film on the inner wall of the separation groove. This makes it easier to ensure isolation. The metal thin film can be formed, for example, by plating a metal such as gold, silver, copper, or nickel on the inner wall surface of the separation groove. In the first high-frequency integrated circuit device according to the present invention, in the configuration, the metal thin film and at least a part of the wiring pattern (for example, a ground pattern) formed on the surface of the substrate are electrically connected. It is preferable that they are connected. This makes it easier to ensure isolation. The first high-frequency integrated circuit device of the present invention preferably further comprises a metal thin film on the entire surface of the insulating resin. As a result, it becomes easier to ensure isolation, and the influence of electromagnetic waves on other high-frequency circuits can be mitigated by the shielding effect of the metal thin film. Furthermore, according to the said structure, the heat dissipation of a high frequency integrated circuit device can also be improved.

  The second high-frequency integrated circuit device of the present invention has a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements, In the insulating resin, a through hole is provided in at least a part between the plurality of high-frequency elements. Thus, as in the first high-frequency integrated circuit device of the present invention described above, isolation between a plurality of high-frequency elements is ensured, and signal interference between the high-frequency elements can be prevented. The material of each component is the same as that of the first high-frequency integrated circuit device of the present invention described above.

  The second high-frequency integrated circuit device of the present invention preferably further comprises a metal thin film on the inner wall of the through hole. This makes it easier to ensure isolation. The metal thin film can be formed, for example, by plating a metal such as gold, silver, copper, or nickel on the inner wall surface of the through hole. In the second high-frequency integrated circuit device according to the present invention, the metal thin film and at least a part of the wiring pattern (for example, a ground pattern) formed on the surface of the substrate are electrically connected in the configuration. It is preferable that they are connected. This makes it easier to ensure isolation. The second high-frequency integrated circuit device of the present invention preferably further comprises a metal thin film on the entire surface of the insulating resin. As a result, it becomes easier to ensure isolation, and the influence of electromagnetic waves on other high-frequency circuits can be mitigated by the shielding effect of the metal thin film. Furthermore, according to the said structure, the heat dissipation of a high frequency integrated circuit device can also be improved.

  In addition, the separation grooves and the through holes provided in the first and second high-frequency integrated circuit devices of the present invention do not need to be provided between all the high-frequency elements, and are provided in places where it is necessary to ensure isolation. That's fine. For example, at least one is provided between the transmission power amplifying element and the switch element, between the transmission element and the reception element, between the reception element and the switch element, between the switch element and the transmission element, and the like. That's fine.

  The method for manufacturing a high-frequency integrated circuit device of the present invention prepares a substrate on which a wiring pattern is formed, mounts a plurality of high-frequency elements on the surface of the substrate, seals the high-frequency elements using an insulating resin, In the insulating resin, a separation groove (first manufacturing method) or a through hole (second manufacturing method) is formed in at least a part between the plurality of high-frequency elements. According to this manufacturing method, since the isolation groove or the through hole is formed after sealing the high frequency element using the insulating resin, the high frequency integrated circuit device of the present invention can be easily formed.

  In the first manufacturing method, when forming the separation groove, any one of a method of mechanically grinding, a method of forming by laser processing, and a method of forming by compression using a mold By adopting such a method, it can be formed easily. In the second manufacturing method, when the through hole is formed, it can be easily formed by adopting a laser processing method. Hereinafter, embodiments of the present invention will be described in detail.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 to be referred to is an explanatory diagram of the high-frequency integrated circuit device according to the first embodiment, FIG. 1A is a schematic perspective view, and FIG. 1B is a sectional view. The high-frequency integrated circuit device according to the first embodiment is an embodiment of the first high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 1A, the high-frequency integrated circuit device 1 according to the first embodiment includes a substrate 10, high-frequency elements 11a and 11b mounted on the surface of the substrate 10, and an insulating property for sealing the high-frequency elements 11a and 11b. And a resin 12. As shown in FIG. 1B, the substrate 10 includes wiring patterns 13 and 14 on the surface and inside, and further, via conductors 15 that electrically connect the high frequency elements 11a and 11b and the wiring pattern 14 are provided. Yes. In the insulating resin 12, a separation groove 16 formed of a bottomed groove is provided between the high frequency elements 11a and 11b. Thus, in the high frequency integrated circuit device 1, the air layer 16 a is formed by providing the separation groove 16, and the relative permittivity of the air layer 16 a is smaller than the relative permittivity of the insulating resin 12. Capacitive coupling due to the electric field between 11a and 11b can be suppressed. Thereby, isolation between the high frequency elements 11a and 11b is ensured, and signal interference between the high frequency elements 11a and 11b can be prevented. The width of the separation groove 16 is preferably 0.2 to 10 mm. If it is less than 0.2 mm, it is difficult to ensure isolation, and if it exceeds 10 mm, it is difficult to reduce the size. In addition, the thickness of the bottom 16b of the separation groove 16 is preferably 0.1 mm or less in order to ensure isolation more easily.

  The separation groove 16 may be formed by a method in which the high frequency elements 11a and 11b are sealed with the insulating resin 12 and then mechanically ground, a method in which laser processing is performed, or a mold. It is preferable to employ a method of forming by compression processing. As a result, the high-frequency integrated circuit device 1 can be easily formed and the manufacturing cost can be reduced.

  Next, a comparison of signal leakage levels between the high frequency integrated circuit device of the present invention and a conventional high frequency integrated circuit device will be described. FIG. 2 is a graph showing the relationship between the frequency and the signal leakage level for the high-frequency integrated circuit device 1 according to the first embodiment and the conventional high-frequency integrated circuit device without the separation groove. As shown in FIG. 2, at a frequency of 2 GHz, the signal leakage level of the high-frequency integrated circuit device 1 (solid line) of the present embodiment is improved by 10 dB or more compared to the conventional (broken line). In this comparison, the width of the separation groove 16 of the high-frequency integrated circuit device 1 was 0.2 mm.

  The first embodiment of the present invention has been described above, but the present invention is not limited to this. For example, as shown in FIG. 3, the separation groove 17 whose cross-sectional shape in the width direction is formed in a V shape, or the separation groove 18 whose cross-sectional shape in the width direction is formed in a U shape as shown in FIG. 4. May be provided. Thereby, a separation groove can be processed easily. Further, as shown in FIG. 5, a separation groove 19 made of a through groove may be provided. Thereby, the isolation between the high frequency elements 11a and 11b can be more easily ensured.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 6 to be referred to is a schematic perspective view of the high-frequency integrated circuit device according to the second embodiment. In addition, the same code | symbol is attached | subjected to the component same as FIG. 1A, and the description is abbreviate | omitted. The high-frequency integrated circuit device according to the second embodiment is an embodiment of the first high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 6, the high-frequency integrated circuit device 20 according to the second embodiment has high-frequency elements 11 c, 11 d, 11 e, and 11 f mounted on the surface of the substrate 10. In the insulating resin 12, separation grooves 21, 22, and 23 each including a through groove are provided between the high-frequency elements 11c and 11d, between the high-frequency elements 11e and 11f, and between the high-frequency elements 11c and 11e. Other configurations are the same as those of the high-frequency integrated circuit device 1 according to the first embodiment described above. As described above, in the high-frequency integrated circuit device 20, the separation groove is provided only in a place where it is necessary to ensure isolation.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to the drawings. FIG. 7 to be referred to is a cross-sectional view of the high-frequency integrated circuit device according to the third embodiment. In addition, the same code | symbol is attached | subjected to the component same as FIG. 1B, and the description is abbreviate | omitted. The high-frequency integrated circuit device according to the third embodiment is an embodiment of the first high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 7, the high-frequency integrated circuit device 30 according to the third embodiment is provided with a separation groove 31 having a V-shaped cross section and a through groove between the high-frequency elements 11 a and 11 b in the insulating resin 12. It has been. The high frequency integrated circuit device 30 further includes a metal thin film 32 on the inner wall 31 a of the separation groove 31, and the metal thin film 32 is electrically connected to the ground pattern 33 formed on the surface of the substrate 10. Other configurations are the same as those of the high-frequency integrated circuit device 1 according to the first embodiment described above. Thereby, the high frequency integrated circuit device 30 can more easily ensure the isolation between the high frequency elements 11a and 11b. The metal thin film 32 can be formed, for example, by plating a metal such as gold, silver, copper, or nickel on the surface of the inner wall 31 a of the separation groove 31. At this time, in the high frequency integrated circuit device 30, since the cross-sectional shape of the separation groove 31 is V-shaped, it can be easily plated.

[Fourth Embodiment]
Next, a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 8 to be referred to is a cross-sectional view of the high-frequency integrated circuit device according to the fourth embodiment. In addition, the same code | symbol is attached | subjected to the component same as FIG. 7, and the description is abbreviate | omitted. The high-frequency integrated circuit device according to the fourth embodiment is an embodiment of the first high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 8, the high-frequency integrated circuit device 40 according to the fourth embodiment includes a metal thin film 32 on the entire surface of the insulating resin 12 including the inner wall 31 a of the separation groove 31. Other configurations are the same as those of the high-frequency integrated circuit device 30 according to the third embodiment described above. Thereby, in addition to the effect which the high frequency integrated circuit device 30 has, the high frequency integrated circuit device 40 can relieve the influence of the electromagnetic waves on other high frequency circuits (not shown) by the shielding effect of the metal thin film 32. Furthermore, heat dissipation can be improved with respect to the high-frequency integrated circuit device 30 according to the third embodiment.

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to the drawings. FIG. 9 to be referred to is an explanatory diagram of the high-frequency integrated circuit device according to the fifth embodiment, FIG. 5A is a schematic perspective view, and FIG. 5B is a sectional view. The same components as those in FIGS. 1A and 1B are denoted by the same reference numerals, and the description thereof is omitted. The high-frequency integrated circuit device according to the fifth embodiment is an embodiment of the second high-frequency integrated circuit device of the present invention described above.

  As shown in FIGS. 9A and 9B, the high-frequency integrated circuit device 50 according to the fifth embodiment is different from the high-frequency integrated circuit device 1 according to the first embodiment 1 (see FIGS. 1A and B) in place of the separation groove 16. A plurality of through holes 51 are provided in a part between the elements 11a and 11b. Other configurations are the same as those of the high-frequency integrated circuit device 1 according to the first embodiment described above. Thereby, the high frequency integrated circuit device 50 can easily ensure isolation between the high frequency elements 11a and 11b. For example, by setting the diameter D (see FIG. 9B) of the through holes 51 to 0.4 mm and the pitch of the through holes 51 to 0.4 mm, the signal leakage level is improved by about 7 dB compared to the conventional high frequency integrated circuit device. It was done. Needless to say, it is easier to ensure isolation by increasing the diameter D of the through holes 51 as much as possible and by reducing the pitch of the through holes 51 as much as possible. The through hole 51 can be formed by laser processing or the like after sealing the high frequency elements 11a and 11b using the insulating resin 12, for example. At this time, the processing becomes easier and the processing time can be shortened as compared with the case of forming the separation groove.

[Sixth Embodiment]
Next, a sixth embodiment of the present invention will be described with reference to the drawings. FIG. 10 to be referred to is a cross-sectional view of the high-frequency integrated circuit device according to the sixth embodiment. In addition, the same code | symbol is attached | subjected to the component same as FIG. 9B, and the description is abbreviate | omitted. The high-frequency integrated circuit device according to the sixth embodiment is an embodiment of the second high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 10, the high-frequency integrated circuit device 60 according to the sixth embodiment is formed on the inner wall 51 a of the through hole 51 in addition to the configuration of the high-frequency integrated circuit device 50 (see FIGS. 9A and 9B) according to the fifth embodiment. A metal thin film 61 is further provided, and the metal thin film 61 and the ground pattern 33 formed on the surface of the substrate 10 are electrically connected. Thereby, the high frequency integrated circuit device 50 can more easily ensure the isolation between the high frequency elements 11a and 11b. The metal thin film 61 can be formed, for example, by plating a metal such as gold, silver, copper, or nickel on the surface of the inner wall 51 a of the through hole 51. At this time, in order to perform plating more easily, it is preferable to form the diameter D of the through hole 51 (see FIG. 9B) to 0.2 mm or more.

[Seventh Embodiment]
Next, a seventh embodiment of the present invention will be described with reference to the drawings. FIG. 11 to be referred to is a cross-sectional view of the high-frequency integrated circuit device according to the seventh embodiment. In addition, the same code | symbol is attached | subjected to the component same as FIG. 10, and the description is abbreviate | omitted. The high-frequency integrated circuit device according to the seventh embodiment is an embodiment of the second high-frequency integrated circuit device of the present invention described above.

  As shown in FIG. 11, the high-frequency integrated circuit device 70 according to the seventh embodiment includes a metal thin film 61 on the entire surface of the insulating resin 12 including the inner wall 51 a of the through hole 51. Other configurations are the same as those of the high-frequency integrated circuit device 60 according to the sixth embodiment described above. Thereby, in addition to the effect which the high frequency integrated circuit device 60 show | plays, the high frequency integrated circuit device 70 can relieve | moderate the influence of the electromagnetic waves to other high frequency circuits (not shown) by the shielding effect of the metal thin film 61. Furthermore, heat dissipation can be improved with respect to the high-frequency integrated circuit device 60 according to the sixth embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing of the high frequency integrated circuit device based on 1st Embodiment of this invention, A is a schematic perspective view, B is sectional drawing. It is a graph which shows the relationship between a frequency and a signal leakage level about the high frequency integrated circuit device which concerns on 1st Embodiment of this invention, and the conventional high frequency integrated circuit device in which the separation groove | channel is not provided. It is sectional drawing which shows the modification of the high frequency integrated circuit device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the modification of the high frequency integrated circuit device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the modification of the high frequency integrated circuit device which concerns on 1st Embodiment of this invention. It is a schematic perspective view of the high frequency integrated circuit device which concerns on 2nd Embodiment of this invention. It is sectional drawing of the high frequency integrated circuit device which concerns on 3rd Embodiment of this invention. It is sectional drawing of the high frequency integrated circuit device which concerns on 4th Embodiment of this invention. It is explanatory drawing of the high frequency integrated circuit device which concerns on 5th Embodiment of this invention, A is a schematic perspective view, B is sectional drawing. It is sectional drawing of the high frequency integrated circuit device which concerns on 6th Embodiment of this invention. It is sectional drawing of the high frequency integrated circuit device which concerns on 7th Embodiment of this invention.

Explanation of symbols

1, 20, 30, 40, 50, 60, 70 High-frequency integrated circuit device 10 Substrate 11a, 11b, 11c, 11d, 11e, 11f High-frequency element 12 Insulating resin 13, 14 Wiring pattern 16, 17, 18, 19, 21 , 22, 23, 31 Separation groove 31a, 51a Inner wall 32, 61 Metal thin film 33 Ground pattern 51 Through hole

Claims (20)

A high-frequency integrated circuit device having a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements,
In the insulating resin, a separation groove is provided in at least a part between the plurality of high-frequency elements.   2. The high-frequency integrated circuit device according to claim 1, wherein a cross-sectional shape of the separation groove in a width direction is formed in a V shape or a U shape.   The high-frequency integrated circuit device according to claim 1, wherein the wiring pattern that electrically connects the high-frequency elements divided by the separation groove is formed inside the substrate.   The high-frequency integrated circuit device according to claim 1, further comprising a metal thin film on an inner wall of the separation groove. Further comprising a metal thin film on the inner wall of the separation groove,
The high frequency integrated circuit device according to claim 1, wherein the metal thin film and at least a part of the wiring pattern formed on the surface of the substrate are electrically connected.   The high-frequency integrated circuit device according to claim 1, further comprising a metal thin film on the entire surface of the insulating resin. A high-frequency integrated circuit device having a substrate on which a wiring pattern is formed, a plurality of high-frequency elements mounted on the surface of the substrate, and an insulating resin that seals the high-frequency elements,
In the insulating resin, a through hole is provided in at least a part between the plurality of high frequency elements.   The high frequency integrated circuit device according to claim 7, further comprising a metal thin film on an inner wall of the through hole. Further comprising a metal thin film on the inner wall of the through hole,
The high-frequency integrated circuit device according to claim 7, wherein the metal thin film and at least a part of the wiring pattern formed on the surface of the substrate are electrically connected.   The high-frequency integrated circuit device according to claim 7, further comprising a metal thin film on the entire surface of the insulating resin. The high-frequency element includes a transmission power amplification element and a switch element,
The high frequency integrated circuit device according to claim 1 or 7, wherein the high frequency integrated circuit device is provided with the separation groove or the through hole between the transmission power amplifying element and the switch element. The high-frequency element includes a transmitting element and a receiving element,
The high-frequency integrated circuit device according to claim 1 or 7, wherein the high-frequency integrated circuit device is provided with the separation groove or the through hole between the transmitting element and the receiving element.   The high frequency integrated circuit device according to claim 1, wherein the separation groove or the through hole is provided at a plurality of locations. The high-frequency element includes a transmitting element, a receiving element, and a switching element,
The high-frequency integrated circuit device includes the separation groove or the penetration between the transmission element and the reception element, between the reception element and the switch element, and between the switch element and the transmission element. The high-frequency integrated circuit device according to claim 1 or 7, wherein a hole is provided. Prepare a board with a wiring pattern,
A plurality of high frequency elements are mounted on the surface of the substrate,
Sealing the high-frequency element using an insulating resin,
A method of manufacturing a high-frequency integrated circuit device, wherein in the insulating resin, a separation groove is formed in at least part of a plurality of the high-frequency elements.   The method of manufacturing a high frequency integrated circuit device according to claim 15, wherein the separation groove is formed by mechanically grinding a part of the insulating resin.   The method of manufacturing a high-frequency integrated circuit device according to claim 15, wherein the separation groove is formed by laser processing a part of the insulating resin.   The method of manufacturing a high frequency integrated circuit device according to claim 15, wherein the separation groove is formed by compressing a part of the insulating resin with a mold. Prepare a board with a wiring pattern,
A plurality of high frequency elements are mounted on the surface of the substrate,
Sealing the high-frequency element using an insulating resin,
A method of manufacturing a high-frequency integrated circuit device, wherein in the insulating resin, a through hole is formed in at least a part between a plurality of the high-frequency elements. The method for manufacturing a high-frequency integrated circuit device according to claim 19, wherein the through hole is formed by laser processing a part of the insulating resin.

Images