JP2005340317A - Semiconductor package, and manufacturing method and apparatus thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable semiconductor package for performing the flip-chip packaging of a semiconductor element on a circuit board without generating any voids. <P>SOLUTION: A bump electrode 2 formed in the semiconductor element 1 is pressed to a resin film 3 having a flux function while being heated, thus transferring the resin film 3 to the side of the bump electrode 2. Then, while the bump electrode 2 is in contact with the electrode pattern 5 of an interposer (circuit board) 4 via the resin film 3, the bump electrode 2 and the electrode pattern 5 are connected by heating, thus mounting the semiconductor element 1 on the interposer 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor package manufacturing method, a semiconductor package, and a semiconductor package manufacturing apparatus.

  In order to meet the demands for small size, light weight, and low power consumption of electric products, along with high integration technology of semiconductor elements, mounting technology for assembling these semiconductor elements at high density has been developed. Among such mounting technologies, flip chip connection, in which a semiconductor chip is bare-chip mounted in a face-down state on a circuit board (interposer) on which multilayer wiring is formed, not only reduces the size and weight of the semiconductor package, but also increases the speed. Is also advantageous.

  By the way, in the manufacture of a semiconductor package by flip chip connection, solder bonding using bumps formed of solder balls is employed. In the case of solder bonding, a soldering flux is used to remove oxides attached to the metal surface of the electrode facing the solder surface or to prevent reoxidation on the metal surface during solder bonding. Below, the manufacturing procedure of the semiconductor package using the adhesive film which has a flux function is demonstrated.

  First, as shown in FIG. 7A, for example, solder bumps 2 are bonded to the semiconductor element 1 side, and an adhesive film 3 is placed between the semiconductor element 1 and the interposer 4. Then, as shown in FIG. 7B, the semiconductor element 1, the adhesive film 3, and the interposer 4 are pressure-bonded under heating. Thereby, the adhesive film 3 is softened and seals between the semiconductor element 1 and the interposer 4. In this state, solder reflow is performed, and the solder bumps 2 are soldered to the electrodes 5 of the interposer 4 to obtain the semiconductor package 11. Thereafter, the semiconductor package 11 is further heat-treated to completely cure the adhesive film 3. The adhesive film 3 may be attached in advance to the semiconductor element 1 side or the interposer 4 side. And when pasting on the interposer 4 side, it can join using a laminate roll (refer above patent document 1 below).

Japanese Patent Laid-Open No. 2003-231876

  However, as described above, in the method of manufacturing a semiconductor package, the semiconductor element 1 and the interposer 4 are bonded together via the adhesive film 3. Therefore, if the bonding position accuracy of the adhesive film 3 with respect to the interposer 4 is low, the interposer 4 The take-out electrode 5a arranged in the periphery of the cover is covered with the adhesive film 3, which causes a connection failure to an external device. In order to prevent this, not only the positional accuracy of the semiconductor element 1 with respect to the interposer 4 but also the positional accuracy of the adhesive film 3 with respect to the interposer 4 needs to be secured to some extent. Is required.

  Furthermore, if the surface of the interposer 4 is uneven, a gap is likely to be formed between the interposer 4 and the adhesive film 3, which causes voids (voids) in subsequent heat treatment. This is the same between the semiconductor element 1 having the solder bumps 2 and the adhesive film 3. And when a void arises, it becomes easy to produce a leak between bumps 2, and the reliability of the semiconductor package 11 falls remarkably.

  Since the adhesive film 3 originally has a flux function, water is formed by the reaction between the oxide film covering the surface of the solder bump 2 and the flux component contained in the adhesive film 3. . However, the adhesive film 3 is filled between the semiconductor element 1 and the interposer 4. For this reason, the water generated in the portion between the solder bump 2 and the electrode 5 as described above is not released from between the semiconductor element 1 and the interposer 4, and becomes a major factor that generates voids as water vapor in the subsequent heat treatment. Become. As described above, this void reduces the reliability of the semiconductor package.

  The adhesive film 3 is usually formed by coating on a mount such as a PET film. Therefore, as a practical procedure, first, the adhesive film 3 is attached to the interposer 4 side, then the mount is peeled off from the adhesive film 3, and then the semiconductor element 2 is aligned with the interposer 4. The semiconductor element 2 is pressure-bonded (mounted) with heating on the interposer 4 to which is attached.

  However, in such a practical procedure, when the semiconductor element 1 is aligned with respect to the interposer 4, the alignment mark formed on the interposer must be detected via the adhesive film 3. . For this reason, the detection accuracy of the alignment mark cannot be obtained, and it becomes difficult to align the semiconductor element 1 with respect to the interposer 4 with high accuracy.

  Accordingly, the present invention provides a method for manufacturing a highly reliable semiconductor package in which a semiconductor element can be flip-chip mounted with good accuracy on a circuit board without forming voids and the connection to an external device is also good. It is an object of the present invention to provide a semiconductor package obtained by the manufacturing method and a manufacturing apparatus for manufacturing the semiconductor package.

  In order to achieve such an object, the semiconductor package manufacturing method of the present invention is formed on a semiconductor element or a circuit board with respect to a resin film having a flux function when the semiconductor element is flip-chip mounted on the circuit board. A feature is that a step of transferring the resin film to the bump electrode is performed by pressing the bump electrode in a heated state.

  In such a manufacturing method, by pressing the bump electrode in a heated state against the resin film having a flux function, the resin film portion in contact with each bump electrode is softened and individually transferred to the bump electrode. The Therefore, the resin film is individually transferred to each bump electrode, and the interval between the bump electrodes is maintained.

  In addition, after the above-described steps, the semiconductor element is mounted on the circuit board in a state where the bump electrode is in contact with the electrode pattern of the circuit board or the semiconductor element through the resin film, and the bump electrode and the electrode pattern are heated. The process of connecting to is performed.

  Thereby, the oxide film on the bump electrode surface is removed by the flux function of the resin film transferred to each bump electrode, and the electrode pattern and the bump electrode are connected well. At this time, moisture is generated in the process of removing the oxide film. However, since the gap is kept between the bump electrodes covered with the resin film as described above, the moisture is contained between the circuit board and the semiconductor element. The moisture is not removed and the water is evaporated and removed from the gap. Therefore, it is possible to prevent voids from being formed between the circuit board and the semiconductor element due to the moisture. Even if air bubbles are held between the resin covering the surface of the bump electrode and the electrode pattern, a space communicating with the outside is maintained between the bump electrodes between the circuit board and the semiconductor element. By heating, the bubbles are easily expelled from between the circuit board and the semiconductor element through the space. Even when a gas component is generated from the resin film by heating, the gas component is easily expelled from between the circuit board and the semiconductor element through the space. Therefore, it is possible to prevent the bubbles and gas components from expanding and forming voids in the subsequent process.

  And since the part covered with the resin film is limited to the circumference | surroundings of a bump electrode, an excess location is not covered with a resin film. As a result, the risk of the extraction electrode being covered with the resin film is suppressed, and the semiconductor element is easily aligned with the circuit board.

  Further, by performing a step of filling a sealing resin between the circuit board and the semiconductor element after the above-described process, the gap between the circuit board and the semiconductor element is sealed without generating voids.

  The semiconductor package of the present invention is obtained by the above-described manufacturing method, and in a semiconductor package in which a semiconductor element is flip-chip mounted on a circuit board via a bump electrode, the resin film is individually covered around the bump electrode. It is characterized by being provided.

  According to the semiconductor package having such a configuration, the connection portion by the bump electrode is mechanically reinforced by the resin film.

  Furthermore, the present invention is a semiconductor package manufacturing apparatus for performing the above-described manufacturing method. This manufacturing apparatus includes a mounting stage, a transfer stage, and a crimping head. Among these, the mounting stage is for mounting and fixing the circuit board or the semiconductor element so as to be heatable. The transfer stage is for mounting and fixing the resin film. The crimping head heats and holds the semiconductor element or circuit board, and further has a configuration in which the surface of the heated semiconductor element or circuit board can be pressed against the mounting stage and the transfer stage, respectively. .

  In the manufacturing apparatus having such a configuration, the surface of the semiconductor element or circuit board heated and held by the pressure bonding head is pressed against the resin film placed and fixed on the transfer stage, and is also placed and fixed on the mounting stage. Pressed against the heated circuit board or semiconductor element. For this reason, first, the surface of the semiconductor element or circuit board is pressed against the resin film, so that the resin film is softened and transferred by the bump electrodes in the heated state of the surface of the semiconductor element or circuit board, and then the circuit board. Alternatively, by pressing the surface of the semiconductor element against the semiconductor element, the bump electrode is pressed and connected to the electrode pattern on the circuit board or the surface of the semiconductor element through the resin film in a heated state. Is done.

  As described above, according to the method for manufacturing a semiconductor package of the present invention, a resin film having a flux function can be transferred to the bump electrodes while keeping a gap between the bump electrodes. It is possible to prevent voids from being formed between the circuit board and the semiconductor element in a state where is mounted on the circuit board. Therefore, it is possible to obtain a highly reliable semiconductor package in which leakage between the bump electrodes due to voids is suppressed. In addition, the risk of the extraction electrode being covered with a resin film is suppressed, and the positioning of the semiconductor element with respect to the circuit board is easily performed, so that the semiconductor element can be flip-chip mounted with good accuracy on the circuit board. In addition, a highly reliable semiconductor package with good connection to an external device can be obtained.

  In addition, according to the semiconductor package of the present invention, since the resin film can mechanically reinforce the connection portion by the bump electrode, it is possible to improve resistance to thermal fluctuation.

  Furthermore, according to the semiconductor package manufacturing apparatus of the present invention, the above-described semiconductor package manufacturing method can be carried out.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same members as those in the conventional manufacturing method described with reference to FIG.

<Method for Manufacturing Semiconductor Package, Semiconductor Package-1>
1 to 2 are process diagrams showing a first example of a method of manufacturing a semiconductor package according to the present invention. The manufacturing method shown in this figure is a method of flip-chip mounting a semiconductor element on a circuit board, and is characterized by the following procedure.

  First, as shown in FIG. 1 (1), a resin film (adhesive film) 3 applied on a mount 20 made of a resin film such as PET (polyethylene terephthalate) is prepared. As will be described later, the resin film 3 has a flux function and is softened by heating. The resin film 3 is applied and formed on the mount 20 in a state of being softened by heating or melting with a solvent or the like. is there. The resin film 3 may be one that is softened by heating and then cured by further heating.

  Then, a semiconductor element (here, for example, a semiconductor chip) 1 used for manufacturing the semiconductor package is arranged so as to face the resin film 3 applied on the mount 20. The semiconductor element 1 is provided with a bump electrode 2 on the surface, and the surface on which the bump electrode 2 is formed is opposed to the resin film 3.

  The bump electrode 2 is formed, for example, by forming a copper (Cu) film on an electrode pad made of, for example, aluminum (Al) by sputtering or the like, and then forming a Ni-Sn-Ag alloy film by electrolytic plating from above the mask. After the mask is removed, unnecessary portions of copper are removed by etching, and then rounded by reflow treatment. The height h of each bump electrode 2 is preferably about several times to a fraction of the film thickness t of the resin film 3.

  In this state, the semiconductor element 1 is pressed against the resin film 3 as shown in FIG. At this time, the bump electrode 2 is heated. The heating temperature at this time is set to a heating temperature at which the resin film 3 is softened and adhered to the bump electrode 2 by heating through the bump electrode 2. As a result, the bump electrode 2 is inserted into the softened resin film 3. Here, the heated bump electrode 2 may be pressed against the resin film 3, or the bump electrode 2 may be heated while being pressed against the resin film 3. Further, the sinking into the resin is determined by the embedding pressure in the resin and the semiconductor element heating temperature. For this reason, by slightly heating the resin film side, it is possible to more accurately control the sinking of the bump into the resin film.

  After a predetermined time has passed in the above state, the semiconductor element 1 is pulled up from the resin film 3 as shown in FIG. Thereby, the softened resin film 3 is transferred to the bump electrode 2 in a state in which at least the tip of each bump electrode 2 is covered.

  Next, as shown in FIG. 2 (1), the semiconductor element 1 is disposed opposite to the interposer (circuit board) 4. The interposer 4 has electrode patterns 5 formed on the surface side, and is arranged with the surface side on which these electrode patterns 5 are formed facing upward. In this state, the semiconductor element 1 is aligned with the interposer 4. This alignment is performed so that each bump electrode 2 is arranged corresponding to each electrode pattern 5 by detecting an alignment mark (not shown) provided on the interposer 4.

  The electrode pattern 5 may be plated similar to the bump electrode 2. Further, it may be formed by Ni-Au electroless plating or electrolytic plating.

  In this state, the semiconductor element 1 is pressed against the interposer 4 as shown in FIG. At this time, the bump electrode 2 is heated and the interposer 4 is also heated. The heating temperature at this time is set so that the oxide film on the surface of the bump electrode 2 is removed by the flux function of the resin film 3 and the bump electrode 2 and the electrode pattern 5 are solid-phase diffused or melted. . As a result, the bump electrode 2 and the electrode pattern 5 are bonded by solid phase diffusion bonding or melt bonding, and the connection portion is covered with the resin film 3.

  Note that the oxide film on the surface of the bump electrode 2 can be removed by the flux function of the resin film 3 by performing a heating process before the semiconductor element 1 is pressed against the interposer 4. good.

  After the above steps are completed, a step of curing the resin film 3 is performed by heating. The curing of the resin film 3 may be performed by extending the heating time for the above-described bonding, or may be performed using a separate oven, and the pressure applied to the interposer 4 of the semiconductor element 1 is released. In this state, the resin film 3 may be held at a temperature at which it can be cured.

  Thereafter, as necessary, as shown in FIG. 2 (3), a sealing resin (underfill) 21 is filled between the interposer 4 and the semiconductor element 1. In this case, the injection direction is set and the sealing resin 21 before curing is injected between the interposer 4 and the semiconductor element 1 so that no void is formed between the interposer 4 and the semiconductor element 1. . After the injection, the sealing resin 21 is cured to form the semiconductor package 23. At this time, it is important to fill the sealing resin 21 so that the extraction electrode 5a arranged at the peripheral edge of the interposer 4 is kept exposed.

  The semiconductor package 23 obtained in this way is obtained by flip-chip mounting the semiconductor element 1 on the interposer 4 via the bump electrode 2. Then, the periphery of the bump electrode 2 is individually covered with the resin film 3, and the sealing resin 21 made of a material different from the resin film 3 is filled between the interposer 4 and the semiconductor element 1.

  In the semiconductor package manufacturing method described above, as described with reference to FIGS. 1 (2) and 1 (3), the bump electrode 2 is pressed in a heated state against the resin film 3 having a flux function. As a result, the resin film 3 portion in contact with each bump electrode 2 is individually transferred to the bump electrode 2. For this reason, a gap is maintained between the bump electrodes 2.

  Therefore, next, as described with reference to FIG. 2B, when the semiconductor element 1 is mounted on the interposer 4 via the bump electrode 2, the flux of the resin film 3 transferred to each bump electrode 2. Due to the function, the oxide film on the surface of the bump electrode 2 is removed, and the electrode pattern 5 and the bump electrode 2 are well connected. At this time, moisture is generated in the process of removing the oxide film, but a gap is maintained between the bump electrodes 2 covered with the resin film 3 as described above, so that the gap between the interposer 4 and the semiconductor element 1 is maintained. Moisture is not confined, and moisture is removed by evaporation from this gap. Therefore, it is possible to prevent voids from being formed between the interposer 4 and the semiconductor element 1 due to the moisture.

  Further, even if a bubble is sandwiched between the resin film 3 covering the surface of the bump electrode 2 and the electrode pattern 5, the bubble is released from the resin film 3 by heating and passes through the space between the bump electrodes 2. It is easily expelled from between the interposer 4 and the semiconductor element 1. Even when a gas component is generated from the resin film 3 by heating, the gas component is easily expelled from between the interposer 4 and the semiconductor element 1 through the space. Therefore, it is possible to prevent the bubbles and gas components from expanding and forming voids in the subsequent process.

  Moreover, since the surface of the interposer 4 is not covered with the resin film 3, the semiconductor element 1 can be easily aligned with the interposer 4 and the mounting position accuracy can be kept good.

  Further, since only a limited portion such as the periphery of each bump electrode 2 is covered with the resin film 3, in the state where the semiconductor element 1 is bump-connected on the interposer 4, the extraction electrode 5 a of the interposer 4 is made of resin. It is also possible to prevent the film 3 from being covered. For this reason, it is also possible to ensure a connection state with an external device.

  Furthermore, as described with reference to FIG. 2C after the above-described steps, a step of filling the sealing resin 21 between the interposer 4 and the semiconductor element 1 is performed without generating voids. It is possible to seal between the interposer 4 and the semiconductor element 1.

  As a result of the above, the highly reliable semiconductor package 23 capable of suppressing the leakage between the bump electrodes 2 caused by voids, enabling highly accurate mounting, and maintaining good connection with an external device. Can be obtained.

  Then, the semiconductor package 23 obtained in this way is mechanically reinforced at the connecting portion by the bump electrode 2 by the resin film 3. For this reason, for example, when the semiconductor package 23 is attached to an external device, the connection by the bump electrode 2 between the semiconductor element 1 and the interposer 4 can be maintained against other thermal fluctuations, and the resistance to thermal fluctuations is improved. Can be achieved.

  As shown in FIG. 2B, the state before filling with the sealing resin 21 may be a semiconductor package, and even in this case, the same effect can be obtained.

  Next, the resin film 3 used in the above manufacturing method will be described.

  As this resin film 3, the adhesive film described in the above-mentioned JP-A-2003-231876 is used. That is, the adhesive film contains at least one first resin having a phenolic hydroxyl group or a carboxyl group. As a result, dirt such as solder and oxide on the metal surface can be removed, and it can act as a solder bonding flux. This is because the phenolic hydroxyl group or carboxyl group has a reducing action, and therefore oxides and the like attached to the solder surface and the metal surface of the facing electrode can be removed. Furthermore, the first resin that has acted as a flux can make it unnecessary to remove the residual flux. The reason is that since the first resin is cured in the heating process after the solder bonding, no volatile matter or the like is generated. If the removal of the residual flux can be made unnecessary, a cleaning step after solder joining can be made unnecessary, and electrical insulation can be maintained even in a high temperature and high humidity atmosphere, and solder joining with high joining strength and reliability becomes possible.

  Examples of the first resin include novolak type phenol resins such as phenol novolak resin, alkylphenol novolak resin, polyfunctional phenol novolak resin, resol type phenol resin, and polyvinyl phenol resin.

  The adhesive film preferably contains a second resin (second compound) that acts as an antioxidant and is capable of curing reaction. Thereby, the thermal stability of flux activity can be improved. Examples of the second resin that acts as an antioxidant and that can be cured include a phenol-based antioxidant and an amine-based antioxidant. Examples of phenolic antioxidants include monophenolic, bisphenolic, and polymeric phenolic antioxidants. Further, those that act as a catalyst for the curing reaction include sulfur-based antioxidants and phosphorus-based antioxidants.

  The adhesive film includes a third resin different from the first resin and the second resin. Examples of the third resin include epoxy resins such as novolak type epoxy resins and bisphenol type epoxy resins, thermosetting resins such as cyanate resins such as novolak type cyanate resins and bisphenol type cyanate resins, polyimide resins, and polyetherimide resins. And thermoplastic resins such as polyethersulfone resin. Among these, bisphenol-type epoxy resins (particularly long-chain bisphenol-type epoxy resins) are preferable. Thereby, the adhesion / sealing property between the semiconductor element and the interposer or the like can be further improved. By including such a third resin, the film can be easily formed.

  The weight average molecular weight of the third resin is not particularly limited, but is preferably 1,000 or more, particularly preferably 2,000 to 10,000. If the weight average molecular weight of the third resin is less than the lower limit, film formation may be reduced due to the occurrence of voids, etc.If the upper limit is exceeded, the fluidity of the resin at the time of soldering decreases, The effect of improving the reliability of solder joint connection may be reduced.

  Although the softening temperature of the said adhesive film is not specifically limited, 40-150 degreeC is preferable. This is because it is easier to work if there is no tack at room temperature.

  In addition, the above description about the resin film 3 is an example to the last, and this resin film is fundamentally a film state at normal temperature, and if the bump is stabbed, the resin component which forms the film will adhere to the bump. Alternatively, when the bump is pierced by heating, the resin component forming the film adheres to the bump. The component constituting the resin film may be any resin film as long as it has a function of reducing the oxide film of the bump such as tin by heating and a function of curing by heating for a long time. .

<Method for Manufacturing Semiconductor Package, Semiconductor Package-2>
FIG. 3 is a process diagram showing the characteristic part of the second example of the method for manufacturing a semiconductor package of the present invention. The manufacturing method of the second example shown in this figure is different from the manufacturing method of the first example described above with reference to FIGS. 1 to 2 in the procedure of filling the sealing resin.

  That is, in the manufacturing method of the second example, the same procedure as described with reference to FIGS. 1 (1) to 2 (2) in the first example is performed. Thus, as shown in FIG. 3A, the semiconductor element 1 is mounted on the interposer 4 via the bump electrode 2, and the connection portion by the bump electrode 2 is covered with the resin film 3.

  In this state, as shown in FIG. 3B, the interposer 4 on which the semiconductor element 1 is mounted is mounted (mounted) on the support substrate 30. Then, the extraction electrode 5a of the interposer 4 and the connection electrode (not shown) on the surface of the support substrate 30 are connected by a connection wiring such as the illustrated bonding wire 32 or lead wire.

  Thereafter, as shown in FIG. 3 (3), a sealing resin 21 is filled between the interposer 4 and the semiconductor element 1. In this case, the injection direction is set and the sealing resin 21 before curing is injected between the interposer 4 and the semiconductor element 1 so that no void is formed between the interposer 4 and the semiconductor element 1. This is the same as the first example in that the sealing resin 21 is cured after the injection. However, at this time, since the bonding wire 32 is already connected to the extraction electrode 5a disposed at the peripheral portion of the interposer 4, this connection portion may be covered with the sealing resin 21, and the extraction electrode 5a When it is provided at a position close to the semiconductor element 1, it is covered with a sealing resin 21.

  After the above, as shown in FIG. 3 (4), the semiconductor element 1, the interposer 4 and the bonding wire 32 are covered with the mold resin 33, and the mold resin 33 is cured to complete the semiconductor package 34.

  The semiconductor package 34 obtained in this manner is obtained by flip-chip mounting the semiconductor element 1 on the interposer 4 through the bump electrodes 2 in the same manner as the semiconductor package obtained by the manufacturing method of the first example. . Then, the periphery of the bump electrode 2 is individually covered with the resin film 3, and the sealing resin 21 made of a material different from the resin film 3 is filled between the interposer 4 and the semiconductor element 1. Further, the interposer 4 is further mounted on the support substrate 30, the connection electrode of the support substrate 30 and the extraction electrode 5 a of the interposer 4 are connected by the bonding wire 32, and this connection portion is covered with the sealing resin 21. It becomes.

  And in the manufacturing method of such a 2nd example, in addition to the effect demonstrated in the 1st example, the following effects can be acquired. That is, as described with reference to FIG. 3B, at the time of connection by the bonding wire 32, the joint portion by the bump electrode 5 is covered with the resin film 3 and mechanically reinforced. For this reason, the bonding state of the bonding portion by the bump electrode 2 can be kept good against the heating at the time of connection by the bonding wire 32.

  As described with reference to FIG. 3 (3), when the sealing resin 21 is injected between the interposer 4 and the semiconductor element 1, the extraction electrode 5 a disposed at the peripheral portion of the interposer 4 is applied. Is already connected to the bonding wire 32. Therefore, when the sealing resin 21 is injected, the operation can be performed without worrying about the extraction electrode 5 becoming dirty, and the workability can be improved. In addition, since the connecting portion may be covered with the sealing resin 21, the outer shape of the interposer 4, that is, the outer shape of the semiconductor package 34 itself can be reduced. Thereby, it is also possible to reduce material cost.

<Semiconductor package manufacturing equipment>
FIG. 4 shows an overall configuration of a semiconductor package manufacturing apparatus used when the manufacturing method as described above is performed. The manufacturing apparatus 100 shown in this figure includes a mounting stage 101, a transfer stage 102, and a crimping head 103.

  Among these, the mounting stage 101 is a stage for mounting and fixing the wafer W before being divided into each interposer (4) in a heatable manner, and a vacuum serving as a suction source for sucking and fixing the mounted wafer W. A pump (not shown) is provided. A heater (not shown) for heating the wafer W is built under the stage surface 101a to which the wafer W is attracted and fixed.

  The transfer stage 102 is a stage for mounting and fixing the resin film 3. Here, as described with reference to FIG. 1A in the description of the manufacturing method of the semiconductor package, the resin film 3 applied on the mount (20) such as a PET film is used. Then, the resin film 3 with the mount (20) is placed and fixed on the stage surface 102a of the transfer stage 102 so that the resin film 3 faces upward.

  The transfer stage 102 includes a supply unit 104 in which, for example, the resin film 3 with a mount (20) is wound in a roll shape. On the other hand, a winding unit 105 that winds the resin film 3 from the supply unit 104 into a roll is provided. Further, a stage unit 106 is provided on which the passage portion of the resin film 3 wound from the supply unit 103 to the winding unit 105 is placed. It is preferable that the mounting height of the resin film 3 in the stage unit 106 is set to be approximately the same as the mounting height of the wafer W in the mounting stage 101 described above.

  The crimping head 103 holds and heats the semiconductor element 1, and further presses the surface of the held semiconductor element 1 against the stage surface 101 a of the mounting stage 101 and the stage surface 102 a of the transfer stage 102. Has been.

  For this reason, the pressure-bonding head 103 is provided with a vacuum pump (not shown) serving as a suction source for sucking and fixing the semiconductor element 1 on the back side thereof. Further, a heater (not shown) for heating the held semiconductor element 1 is incorporated below (inside) the suction surface 103. The suction surface 103a of the pressure-bonding head 103 is provided in a state of facing the stage surface 101a of the mounting stage 101 and the stage surface 102a of the transfer stage 102, and therefore is directed downward in the drawing.

  The crimping head 103 includes a driving unit 107 for allowing the surface of the held semiconductor element 1 to be pressed against the stage surface 101 a of the mounting stage 101 and the stage surface 102 a of the transfer stage 102. . The drive unit 107 moves the suction surface 103a of the suction head 103 in the x, y, and z directions, and further rotates and moves the suction head 103 downward.

  Next, driving in the case where the above-described manufacturing method is performed using the manufacturing apparatus having such a configuration will be described with reference to FIGS. The correspondence relationship with the process described with reference to FIG. 1 is shown in parentheses.

  First, the crimping head 103 is moved to a semiconductor element tray not shown here. Then, the semiconductor elements 1 arranged in the tray are attracted and held by the crimping head 103 so that the bump electrode surface faces downward.

  Then, as shown in FIG. 4, the semiconductor element 1 is moved onto the transfer stage 102 by driving the crimping head 103. On the other hand, the unused portion of the resin film 3 is placed on the stage surface 102 a of the transfer stage 102 by driving the winding unit 105. [Corresponding to Fig. 1 (1)]

  Next, as shown in FIG. 5A, the semiconductor element 1 is pressed against the resin film 3 on the stage surface 102 a of the transfer stage 102 by driving the crimping head 103. At this time, the semiconductor element 1 is heated by the suction head 103 and the resin film 3 is softened via the bump electrodes of the semiconductor element 1. [Corresponding to Fig. 1 (2)]

  Thereafter, as shown in FIG. 4 again, the semiconductor element 1 is pulled up from the resin film 3 by driving the crimping head 103. As a result, the softened resin film 3 is transferred to the bump electrodes 2 so as to cover the individual bump electrodes 2. [Corresponding to Fig. 1 (3)]

  Next, as shown in FIG. 5B, the semiconductor element 1 is moved onto the mounting stage 101 by driving the pressure-bonding head 103, and each interposer portion of the wafer W placed and fixed on the stage surface 101a. The semiconductor element 1 is aligned, and then the semiconductor element 1 is pressed against each interposer portion of the wafer W. At this time, the semiconductor element 1 is heated by the suction head 103, and the wafer W is heated by the mounting stage 101, thereby connecting through the bump electrodes. [See Fig. 2 (2)]

  After the above, the semiconductor element 1 is mounted on each interposer portion of the wafer W by repeating the steps described above. However, in this repetition, as shown in FIGS. 6A and 6B, the bump electrode of the semiconductor element 1 is pressed against the resin film 3 on the transfer stage 102, and the resin film is applied to the bump electrode. 6, after the semiconductor element 1 is pulled up from the resin film 3 as shown in FIG. 6 (3) and immediately before the next semiconductor element 1 ′ is pressed as shown in FIG. 6 (4). The unused resin film 3 is moved to the stage unit 106 by driving the winding unit 105 of the transfer stage 102.

  According to the manufacturing apparatus configured as described above, the semiconductor package manufacturing method described above can be performed by the above-described driving procedure.

  In the above description of the embodiment, the case where the bump electrode 2 is provided on the semiconductor element 1 side and the electrode pattern 5 is provided on the interposer 4 side has been described. However, even when a bump electrode is formed on the interposer (circuit board) side and an electrode pattern is provided on the semiconductor element side such as a semiconductor chip, the present invention can be applied and similar effects can be obtained. Can be obtained. In this case, in the above-described embodiment, the semiconductor element is replaced with a circuit board, and the circuit board is replaced with a semiconductor element.

It is process drawing (the 1) which shows the 1st example of the manufacturing method of the semiconductor package of this invention. It is process drawing (the 2) which shows the 1st example of the manufacturing method of the semiconductor package of this invention. It is process drawing which shows the 2nd example of the manufacturing method of the semiconductor package of this invention. It is a figure which shows the whole structure of the manufacturing apparatus of the semiconductor package of this invention. It is a figure explaining the drive of the semiconductor package of this invention. It is a figure explaining the drive of a transfer stage and a pressure bonding head. It is process drawing which shows the manufacturing method of the conventional semiconductor package.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2 ... Bump electrode, 3 ... Resin film, 4 ... Interposer (circuit board), 5 ... Electrode pattern, 5a ... Extraction electrode, 21 ... Sealing resin, 23, 34 ... Semiconductor package, 30 ... Support Substrate, 32 ... bonding wire (connection wiring), 100 ... manufacturing apparatus, 101 ... mounting stage, 102 ... transfer stage, 103 ... crimping head, 104 ... feeding unit, 105 ... winding unit, 106 ... stage unit

Claims (10)

A semiconductor package manufacturing method in which a semiconductor element is flip-chip mounted on a circuit board,
A step of transferring the resin film to the bump electrode side by pressing the bump electrode formed on the semiconductor element or the circuit board in a heated state against the resin film having a flux function. Package manufacturing method. In the manufacturing method of the semiconductor package of Claim 1,
After the step of transferring the resin film,
The bump electrode and the electrode pattern are connected by heating while the bump electrode is in contact with the electrode pattern of the circuit board or semiconductor element through the resin film, and the semiconductor element is mounted on the circuit board A process for producing a semiconductor package, comprising: In the manufacturing method of the semiconductor package of Claim 2,
After the step of mounting the semiconductor element on the circuit board,
A method of manufacturing a semiconductor package, comprising performing a step of filling a sealing resin between the semiconductor element and the circuit board. In the manufacturing method of the semiconductor package of Claim 2,
After the step of mounting the semiconductor element on the circuit board,
Curing the resin film by heating;
A method of manufacturing a semiconductor package, comprising performing a sealing resin filling step between the semiconductor element and the circuit board in this order. In the manufacturing method of the semiconductor package of Claim 2,
After the step of mounting the semiconductor element on the circuit board,
Mounting the circuit board on a support substrate, and connecting the connection electrode of the support substrate and the extraction electrode of the circuit board by connection wiring;
A method of manufacturing a semiconductor package, comprising performing a sealing resin filling step between the semiconductor element and the circuit board in this order. In a semiconductor package in which a semiconductor element is flip-chip mounted on a circuit board via a bump electrode,
A semiconductor package, wherein a resin film is provided so as to individually cover the periphery of the bump electrode. The semiconductor package according to claim 6.
A semiconductor package, wherein a sealing resin is filled between the circuit board and the semiconductor element. The semiconductor package according to claim 6.
A support substrate further mounting a circuit board on which the semiconductor element is flip-chip mounted;
A connection wiring for connecting the connection electrode of the support substrate and the extraction electrode of the circuit board;
The semiconductor package, wherein the connection portion between the connection wiring and the extraction electrode is covered with the sealing resin. A mounting stage for mounting and fixing a circuit board or a semiconductor element in a heatable manner;
A transfer stage for mounting and fixing the resin film;
A pressure-bonding head capable of pressing the surface of the semiconductor element or circuit board against the stage surface of the mounting stage and the stage surface of the transfer stage in a state where the semiconductor element or circuit board is heated and held; A semiconductor package manufacturing apparatus. In the manufacturing apparatus of the semiconductor package of Claim 9,
The transfer stage is
A supply unit in which the resin film is wound in a roll shape;
A winding unit for winding the resin film from the supply unit into a roll;
An apparatus for manufacturing a semiconductor package, comprising: a stage portion for placing a passage portion of the resin film wound around the winding portion from the supply portion.

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