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JP2005332937A - Lead frame with heat releasing member and method for manufacturing the same - Google Patents

Lead frame with heat releasing member and method for manufacturing the same Download PDF

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Publication number
JP2005332937A
JP2005332937A JP2004149257A JP2004149257A JP2005332937A JP 2005332937 A JP2005332937 A JP 2005332937A JP 2004149257 A JP2004149257 A JP 2004149257A JP 2004149257 A JP2004149257 A JP 2004149257A JP 2005332937 A JP2005332937 A JP 2005332937A
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lead frame
thin plate
heat radiating
radiating member
caulking
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Japanese (ja)
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Jiyunji Hisashiba
淳嗣 久柴
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Mitsui High Tec Inc
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Mitsui High Tec Inc
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Priority to JP2004149257A priority Critical patent/JP2005332937A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lead frame with heat releasing members which is excellent in workability and productivity for making it possible to use an easily available thin plate member, and to adjust the thickness of the whole heat releasing member. <P>SOLUTION: This lead frame 13 is configured to be used for, for example, a semiconductor device such as a power MOSFET, and provided with a heat releasing member 12. The heat releasing member 12 is configured by carrying out the caulking lamination of a plurality of thin plate materials 18 to 20, and fixed to a lead frame main body 23. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、例えば、パワーＭＯＳＦＥＴ等の半導体装置に使用される放熱部材付きリードフレーム及びその製造方法に関する。 The present invention relates to a lead frame with a heat radiating member used for a semiconductor device such as a power MOSFET and a method for manufacturing the same.

例えば、特許文献１、２に記載のように、パワーＭＯＳＦＥＴ等の半導体装置では、半導体素子（ＩＣチップ）から発生する熱を効率よく放熱させる目的から、リードフレーム本体に放熱板を接続し、この放熱板上に直接半導体素子を載置するものが知られている。 For example, as described in Patent Documents 1 and 2, in a semiconductor device such as a power MOSFET, a heat sink is connected to a lead frame body for the purpose of efficiently dissipating heat generated from a semiconductor element (IC chip). A device in which a semiconductor element is mounted directly on a heat sink is known.

特開２００１−１４４２４２号公報（第３頁〜第４頁、図１）JP 2001-144242 A (page 3 to page 4, FIG. 1) 特開２００２−２８０５１１号公報（図３、図４）JP 2002-280511 A (FIGS. 3 and 4)

しかしながら、前記特許文献１、２に記載のリードフレームにおいては、放熱板が一枚の厚板材からなっているので、以下のような問題があった。
（１）半導体装置によって使用する放熱板の厚みが異なるので、放熱板用の厚板は殆どが注文生産になっており、厚板材の手配から入荷までに時間がかかり、更にはコスト高になる。
（２）打ち抜きによって厚板から放熱板を形成する際に、放熱板に打痕やバリが発生する。
（３）厚板のため打ち抜き荷重が大であるので、大型のプレスが必要である。
（４）厚板のため、リールトウリール（Reel to Reel) による生産が困難である。
（５）以上の問題は板厚が大きくなると著しくなるので、放熱板を厚く形成することには限界がある。 However, the lead frames described in Patent Documents 1 and 2 have the following problems because the heat dissipation plate is made of a single thick plate material.
(1) Since the thickness of the heat sink to be used varies depending on the semiconductor device, most of the thick plates for the heat sink are custom-made, and it takes time from arrangement of the thick plate material to arrival, and further increases the cost. .
(2) When a heat sink is formed from a thick plate by punching, dents and burrs are generated on the heat sink.
(3) Since the punching load is large due to the thick plate, a large press is necessary.
(4) Because of the thick plate, production by Reel to Reel is difficult.
(5) Since the above problem becomes significant as the plate thickness increases, there is a limit to forming a thick heat sink.

本発明はかかる事情に鑑みてなされたもので、加工性及び生産性に優れ、更には、入手容易な薄板材を使用することができ、放熱部材の全体の厚みを調整することも可能な放熱部材付きリードフレーム及びその製造方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and is excellent in workability and productivity. Furthermore, it is possible to use an easily available thin plate material and to adjust the overall thickness of the heat dissipation member. It is an object of the present invention to provide a lead frame with a member and a manufacturing method thereof.

前記目的に沿う請求項１記載の放熱部材付きリードフレームは、放熱部材を備えたリードフレームであって、
前記放熱部材は、複数枚の薄板材をかしめ積層して構成されている。
また、請求項２記載の放熱部材付きリードフレームは、請求項１記載の放熱部材付きリードフレームにおいて、最上部の前記薄板材のみがリードフレーム本体に連結され、しかも前記それぞれの薄板材の厚みが前記リードフレーム本体の厚みと同等か又は厚く（例えば、１．２〜２倍程度）なっている。 The lead frame with a heat radiating member according to claim 1, which meets the object, is a lead frame provided with a heat radiating member,
The heat radiating member is formed by caulking and laminating a plurality of thin plate materials.
The lead frame with a heat radiating member according to claim 2 is the lead frame with a heat radiating member according to claim 1, wherein only the uppermost thin plate member is connected to the lead frame body, and the thickness of each thin plate member is It is the same as or thicker than the lead frame main body (for example, about 1.2 to 2 times).

そして、請求項３記載の放熱部材付きリードフレームの製造方法は、複数枚の薄板材をかしめ積層し、上部に突出するかしめ用突起を備えた放熱部材を製造し、複数のインナーリードを有するリードフレーム本体に前記かしめ用突起を介して前記放熱部材を連結固定している。
また、請求項４記載の放熱部材付きリードフレームの製造方法は、請求項３記載の方法において、上下に隣り合う前記薄板材は半抜きかしめ用突起で連結され、しかも、該半抜きかしめ用突起の一部又は全部は、前記リードフレーム本体と前記放熱部材を連結するかしめ用突起とは平面的に見て異なる位置に形成されている。 According to a third aspect of the present invention, there is provided a method of manufacturing a lead frame with a heat dissipation member, wherein a plurality of thin plate members are caulked and laminated, a heat dissipating member having a caulking projection protruding upward is manufactured, and a lead having a plurality of inner leads The heat radiating member is connected and fixed to the frame body via the caulking projection.
According to a fourth aspect of the present invention, there is provided a method for manufacturing a lead frame with a heat dissipation member according to the third aspect, wherein the thin plate members adjacent to each other in the upper and lower directions are connected by a half-drawing caulking projection, A part or all of the lead frame main body and the caulking projection for connecting the heat radiating member are formed at different positions in plan view.

請求項１、２記載の放熱部材付きリードフレーム及び請求項３、４記載のその方法においては、厚みを必要とする放熱部材を複数の薄板材をかしめ積層して構成している。従って、例えば、リードフレームの素材となる板を薄板材として使用でき、その積層枚数を変えることによって、任意の厚みの放熱部材を形成することができる。
更には、各薄板材はかしめ積層されているので、上下に隣合う薄板材間の熱伝導性は良好となる。 In the lead frame with a heat radiating member according to claims 1 and 2 and the method according to claims 3 and 4, the heat radiating member requiring a thickness is formed by caulking and laminating a plurality of thin plate materials. Therefore, for example, a plate as a raw material of the lead frame can be used as a thin plate material, and a heat dissipation member having an arbitrary thickness can be formed by changing the number of stacked layers.
Furthermore, since the thin plate materials are caulked and laminated, the thermal conductivity between the thin plate materials adjacent to each other in the vertical direction is good.

従って、本発明の放熱部材付きリードフレーム及びその製造方法においては、以下の効果を有する。
（１）放熱部材を複数枚の薄板材によって構成しているので、例えば、通常のリードフレーム等の汎用の素材を使用することができ、材料の手配から入荷までの期間が短縮すると共に、材料費も安価となる。
（２）打ち抜き対象物は薄板材であるので、各薄板材の打痕やバリは小さく、これらをかしめ積層した放熱部材全体の打痕やバリは殆ど発生しない。
（３）打ち抜き対象物は薄板材であるので打ち抜き荷重が小さく、小型又は中型のプレスで打ち抜きが可能となる。
（４）リールトウリール（Reel to Reel) の生産が容易となる。
（５）薄板材の積層枚数を調整することによって任意の厚みを放熱部材を形成できる。
（６）薄板材を重ねて放熱部材を形成するので、モールドロック部の面積が増加し、モールド樹脂と放熱部材の密着性が向上する。 Therefore, the lead frame with a heat radiation member and the manufacturing method thereof according to the present invention have the following effects.
(1) Since the heat dissipating member is composed of a plurality of thin plate materials, for example, a general-purpose material such as a normal lead frame can be used, and the period from material arrangement to arrival is shortened, and the material Cost is also low.
(2) Since the punched object is a thin plate material, the dents and burrs of each thin plate material are small, and the dents and burrs of the entire heat dissipating member obtained by caulking these are hardly generated.
(3) Since the punching target is a thin plate material, the punching load is small, and punching is possible with a small or medium press.
(4) Reel to Reel production becomes easy.
(5) The heat radiating member can be formed with an arbitrary thickness by adjusting the number of laminated thin plate members.
(6) Since the heat radiating member is formed by stacking the thin plate materials, the area of the mold lock portion is increased, and the adhesion between the mold resin and the heat radiating member is improved.

続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
ここで、図１は本発明の一実施の形態に係る放熱部材付きリードフレームの製造方法を示す工程図、図２は同放熱部材付きリードフレームを用いた半導体装置の断面図、図３（Ａ）、（Ｂ）はそれぞれ放熱部材の平面図及び断面図である。 Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
Here, FIG. 1 is a process diagram showing a manufacturing method of a lead frame with a heat radiating member according to one embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor device using the lead frame with the heat radiating member, and FIG. ) And (B) are a plan view and a cross-sectional view of the heat dissipation member, respectively.

まず、図２に示す本発明の一実施の形態に係る放熱部材付きリードフレーム１３を用いた半導体装置１１について説明する。
この半導体装置１１は、放熱部材１２を有するリードフレーム１３と、その上に搭載された半導体素子１４と、半導体素子１４とリードフレーム１３のインナーリード１５を連接するボンディングワイヤ１６と、半導体素子１４、ボンディングワイヤ１６及びリードフレーム１３の主要部を封止する封止樹脂１７とを有している。 First, the semiconductor device 11 using the lead frame 13 with the heat radiating member according to the embodiment of the present invention shown in FIG. 2 will be described.
The semiconductor device 11 includes a lead frame 13 having a heat dissipation member 12, a semiconductor element 14 mounted thereon, a bonding wire 16 connecting the semiconductor element 14 and the inner lead 15 of the lead frame 13, a semiconductor element 14, It has a bonding resin 16 and a sealing resin 17 that seals the main part of the lead frame 13.

放熱部材１２は同一形状の複数枚の薄板材１８〜２０をかしめ積層したものである。薄板材１８〜２０は通常は熱伝導性のよい金属、例えば、銅又は銅合金からなる。薄板材１８〜２０はプレス加工によって形成され、各薄板材１８〜２０の端部に形成される返り３４は、薄板材１８〜２０の厚み及びそのプレス方法によって形成されるが、板厚が薄いと例えば、端部のシェービング加工も容易に行うことができ、これによって、端部に発生する返り３４を最小にすることができる。 The heat radiating member 12 is formed by caulking and laminating a plurality of thin plate materials 18 to 20 having the same shape. The thin plate members 18 to 20 are usually made of a metal having good thermal conductivity, for example, copper or a copper alloy. The thin plate materials 18 to 20 are formed by pressing, and the return 34 formed at the end of each thin plate material 18 to 20 is formed by the thickness of the thin plate materials 18 to 20 and the pressing method thereof, but the plate thickness is thin. For example, the shaving process of the end portion can be easily performed, so that the return 34 generated at the end portion can be minimized.

各放熱部材１２はかしめ接合されているが、このかしめ連結部は、一枚の板の底部に穴（窪み）をその上に突出部をプレス加工によって半抜き形成している。最上部の薄板材１８の上部に形成される円柱状の突出部２１がかしめピンとなって、リードフレーム本体２３に設けられた貫通孔２２ａに挿通し、突出部２１の頭部が押圧されることによってヘッダー２２が形成され、リードフレーム本体２３と放熱部材１２との連結が図られている。なお、突出部２１の長さを確保するため、リードフレーム本体２３の厚みが薄板材１８より薄くなっているのが好ましいが、同等であってもよい。 Each heat dissipating member 12 is caulked and joined, and this caulking connecting portion is formed by punching a hole (a depression) at the bottom of one plate and a projecting portion on it by pressing. The columnar protrusion 21 formed on the top of the uppermost thin plate member 18 serves as a caulking pin, is inserted into a through hole 22a provided in the lead frame body 23, and the head of the protrusion 21 is pressed. Thus, the header 22 is formed, and the lead frame main body 23 and the heat dissipation member 12 are connected to each other. In addition, in order to ensure the length of the protrusion part 21, it is preferable that the thickness of the lead frame main body 23 is thinner than that of the thin plate member 18, but it may be equivalent.

次に、図１〜図３を参照しながら、この半導体装置１１に使用するリードフレーム１３の製造方法について説明する。
まず、条材をプレス加工（スタンピング加工）して、リードフレーム本体２３を形成する。このリードフレーム本体２３は、中央の開口部を取り囲む複数のインナーリード１５及びこのインナーリード１５に連接されるアウターリード２４を備え、更に、図３にその一部を示す周囲の枠体２５に連接される対となる放熱部材取付け部２７、２８を備えている（ステップＳ１）。リードフレーム本体２３はスタンピング加工の後めっき処理を行う（ステップＳ２）。 Next, a method for manufacturing the lead frame 13 used in the semiconductor device 11 will be described with reference to FIGS.
First, the lead frame body 23 is formed by pressing (stamping) the strip material. The lead frame body 23 includes a plurality of inner leads 15 surrounding the central opening and outer leads 24 connected to the inner leads 15, and further connected to a surrounding frame 25, part of which is shown in FIG. A pair of heat dissipating member mounting portions 27 and 28 to be paired is provided (step S1). The lead frame body 23 is plated after stamping (step S2).

次に、別の工程で、薄板材１８〜２０をプレス加工し（ステップＳ３〜Ｓ５）、これらの薄板材１８〜２０のめっき処理（ステップＳ６〜Ｓ８）を行い、薄板材１８〜２０のかしめ積層を行う（ステップＳ９）。なお、薄板材１８〜２０は、図３に示すようにそれぞれ冷却部２９とその両端の連結部３０、３１とを有し、それぞれの連結部３０、３１にかしめ部３２が形成されている。この実施の形態においては、かしめ部３２は半抜きかしめ用突起からなる突出部２１とその直下部の半抜き穴３３とからなって、下部の薄板材１９、２０の突出部２１が上部の薄板材１８、１９の半抜き穴３３に密着嵌入して、上下の薄板材１８〜２０の連結を図っている。 Next, in another process, the thin plate materials 18 to 20 are pressed (steps S3 to S5), and the thin plate materials 18 to 20 are plated (steps S6 to S8) to caulk the thin plate materials 18 to 20. Lamination is performed (step S9). As shown in FIG. 3, each of the thin plate members 18 to 20 has a cooling portion 29 and connecting portions 30 and 31 at both ends thereof, and a caulking portion 32 is formed at each of the connecting portions 30 and 31. In this embodiment, the caulking portion 32 is composed of a projecting portion 21 made of a half punched caulking projection and a half punched hole 33 immediately below the projecting portion 21, and the projecting portion 21 of the lower thin plate members 19, 20 is an upper thin portion. The upper and lower thin plate members 18 to 20 are connected by closely fitting into the half-cut holes 33 of the plate members 18 and 19.

なお、この実施の形態では、最上部の薄板材１８のかしめ用突起（半抜きかしめ用突起）は、他の薄板材１９、２０の半抜きかしめ用突起と同一となっているので、リードフレーム本体２３の厚みは、各薄板材１８〜２０の厚みより薄く（例えば、リードフレーム本体２３の厚みが薄板材１８〜２０の厚みの１／４〜２／３）なって、薄板材１８のかしめ用突起がリードフレーム本体２３の貫通孔２２ａを貫通し、リードフレーム本体２３の上部から突出するようになっている。 In this embodiment, the uppermost thin plate material 18 has a caulking projection (half-cut caulking projection) that is the same as the other half-plate caulking projections of the thin plate materials 19 and 20. The thickness of the main body 23 is thinner than the thickness of each of the thin plate materials 18 to 20 (for example, the thickness of the lead frame main body 23 is 1/4 to 2/3 of the thickness of the thin plate materials 18 to 20). The protrusions pass through the through holes 22 a of the lead frame main body 23 and protrude from the upper part of the lead frame main body 23.

なお、上下の薄板材１８〜２０は、左右の連結部３０、３１の領域のみにかしめ部３２を設けて、これらをかしめ積層することもできるが、例えば、図３に示すように、冷却部２９の領域に単数又は複数のかしめ部３５を設けて、更に強固に薄板材１８〜２０を連結することもできる。なお、この場合、最上部の薄板材１８のかしめ部は単に貫通孔とすると冷却部上面の平面性が確保できるが、他の薄板材１９、２０と同様に、突出部２１を形成してもよく、これによって、封止樹脂１７との馴染みがよくなる。また、上下の薄板材１８〜２０のかしめ部全てを、リードフレーム本体２３と放熱部材１２を連結固定するかしめ用突起とは、平面視して異なる位置に形成してもよい。 Note that the upper and lower thin plate members 18 to 20 can be formed by providing the caulking portion 32 only in the region of the left and right connecting portions 30 and 31 and laminating them. For example, as shown in FIG. It is also possible to provide one or a plurality of caulking portions 35 in the 29 region, and to connect the thin plate materials 18 to 20 more firmly. In this case, if the caulked portion of the uppermost thin plate member 18 is simply a through hole, the flatness of the upper surface of the cooling unit can be secured. However, as with the other thin plate members 19 and 20, the protruding portion 21 may be formed. In this way, familiarity with the sealing resin 17 is improved. Further, all the caulking portions of the upper and lower thin plate members 18 to 20 may be formed at different positions in plan view with respect to the caulking projection for connecting and fixing the lead frame main body 23 and the heat radiating member 12.

この後、薄板材１８〜２０をかしめ積層した放熱部材１２をリードフレーム本体２３に組み込み、仮かしめを行い（ステップＳ１０）、次に本かしめを行う（ステップＳ１１）。ここで、仮かしめはリードフレーム本体２３の貫通孔２２ａを挿通した突出部２１の頂部を広げる程度の加工をいい、本かしめは突出部２１の頭部を潰して、上下に隣り合う薄板材１８〜２０の密着性を高めることをいう。
これらのリードフレーム本体２３の素材は条材であるので、放熱部材付きリードフレーム１３は所定ピッチで連続的に形成されることになり、適当長さで切断する単尺カットを行う（ステップＳ１２）。 Thereafter, the heat radiating member 12 obtained by caulking and laminating the thin plate materials 18 to 20 is incorporated into the lead frame main body 23, temporary caulking is performed (step S10), and then main caulking is performed (step S11). Here, temporary caulking refers to processing that widens the top of the protruding portion 21 inserted through the through-hole 22a of the lead frame main body 23, and this caulking crushes the head of the protruding portion 21 so that the thin plate members 18 that are adjacent to each other vertically. It means increasing the adhesiveness of ~ 20.
Since the material of the lead frame main body 23 is a strip material, the lead frame 13 with the heat radiating member is continuously formed at a predetermined pitch, and a single cut is performed to cut at an appropriate length (step S12). .

前記実施の形態においては、放熱部材１２として３枚の薄板材１８〜２０を使用していたが、薄板材が２枚又は４枚以上であっても本発明は適用される。これによって、薄板材１８〜２０の厚み及び枚数を適当に選択することによって、任意の厚みの放熱部材を形成することもできる。
また、放熱部材を構成する各薄板材相互はかしめ積層によって積層しているが、各薄板材間の熱伝導性を高めるために、銀ペースト等の熱伝導性のよい接着剤を充填することもできる。また、各薄板材の厚みは均等である必要はなく、例えば、最上部の薄板材の厚みを厚くすることもでき、これによって、突出部の高さを大きくすることができる。
更に、かしめ方式はこの実施の形態に限定されず、その他のかしめ方式（例えば、リベット方式、山形かしめ方式）であってもよい。
そして、この実施の形態においては、半導体素子は放熱部材の上に載置されているが、リードフレームに形成された半導体素子搭載部の下部に密着して設けてもよい。 In the said embodiment, although the three thin plate materials 18-20 were used as the heat radiating member 12, this invention is applied even if there are two or four or more thin plate materials. Accordingly, a heat dissipation member having an arbitrary thickness can be formed by appropriately selecting the thickness and the number of the thin plate members 18 to 20.
In addition, the thin plate materials constituting the heat radiating member are laminated by caulking, but in order to increase the thermal conductivity between the thin plate materials, an adhesive having good thermal conductivity such as silver paste may be filled. it can. Moreover, the thickness of each thin plate material does not need to be equal, For example, the thickness of the uppermost thin plate material can also be increased, and thereby the height of the protruding portion can be increased.
Further, the caulking method is not limited to this embodiment, and other caulking methods (for example, a rivet method or a mountain caulking method) may be used.
In this embodiment, the semiconductor element is placed on the heat radiating member, but may be provided in close contact with the lower part of the semiconductor element mounting portion formed on the lead frame.

本発明の一実施の形態に係る放熱部材付きリードフレームの製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the lead frame with a heat radiating member which concerns on one embodiment of this invention. 同放熱部材付きリードフレームを用いた半導体装置の断面図である。It is sectional drawing of the semiconductor device using the lead frame with the same heat radiating member. （Ａ）、（Ｂ）はそれぞれ放熱部材の平面図及び断面図である。(A), (B) is the top view and sectional drawing of a heat radiating member, respectively.

符号の説明Explanation of symbols

１１：半導体装置、１２：放熱部材、１３：放熱部材付きリードフレーム、１４：半導体素子、１５：インナーリード、１６：ボンディングワイヤ、１７：封止樹脂、１８〜２０：薄板材、２１：突出部、２２：ヘッダー、２２ａ：貫通孔、２３：リードフレーム本体、２４：アウターリード、２５：枠体、２７、２８：放熱部材取付け部、２９：冷却部、３０、３１：連結部、３２：かしめ部、３３：半抜き穴、３４：返り、３５：かしめ部 11: Semiconductor device, 12: Heat radiation member, 13: Lead frame with heat radiation member, 14: Semiconductor element, 15: Inner lead, 16: Bonding wire, 17: Sealing resin, 18-20: Thin plate material, 21: Projection , 22: header, 22a: through hole, 23: lead frame main body, 24: outer lead, 25: frame, 27, 28: heat radiating member mounting part, 29: cooling part, 30, 31: connecting part, 32: caulking Part, 33: half punched hole, 34: return, 35: caulking part

Claims (4)

放熱部材を備えたリードフレームであって、
前記放熱部材は、複数枚の薄板材をかしめ積層して構成されていることを特徴とする放熱部材付きリードフレーム。 A lead frame with a heat dissipation member,
The heat dissipating member is formed by caulking and laminating a plurality of thin plate members. 請求項１記載の放熱部材付きリードフレームにおいて、最上部の前記薄板材のみがリードフレーム本体に連結され、しかも前記それぞれの薄板材の厚みが前記リードフレーム本体の厚みと同等か又は厚くなっていることを特徴とする放熱部材付きリードフレーム。 2. The lead frame with a heat radiating member according to claim 1, wherein only the uppermost thin plate material is connected to the lead frame main body, and the thickness of each thin plate material is equal to or thicker than the thickness of the lead frame main body. A lead frame with a heat radiating member. 複数枚の薄板材をかしめ積層し、上部に突出するかしめ用突起を備えた放熱部材を製造し、複数のインナーリードを有するリードフレーム本体に前記かしめ用突起を介して前記放熱部材を連結固定することを特徴とする放熱部材付きリードフレームの製造方法。 A plurality of thin plate materials are caulked and laminated to manufacture a heat radiating member having a caulking protrusion protruding upward, and the heat radiating member is connected and fixed to a lead frame body having a plurality of inner leads via the caulking protrusion. A method for manufacturing a lead frame with a heat radiating member. 請求項３記載の放熱部材付きリードフレームの製造方法において、上下に隣り合う前記薄板材は半抜きかしめ用突起で連結され、しかも、該半抜きかしめ用突起の一部又は全部は、前記リードフレーム本体と前記放熱部材を連結するかしめ用突起とは平面的に見て異なる位置に形成されていることを特徴とする放熱部材付きリードフレームの製造方法。 4. The method for manufacturing a lead frame with a heat radiating member according to claim 3, wherein the thin plate members adjacent to each other in the upper and lower directions are connected by a half-cut caulking projection, and a part or all of the half-cut caulking projection is the lead frame. A method of manufacturing a lead frame with a heat radiating member, wherein the main body and the caulking projection for connecting the heat radiating member are formed at different positions in plan view.
JP2004149257A 2004-05-19 2004-05-19 Lead frame with heat releasing member and method for manufacturing the same Pending JP2005332937A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124251A (en) * 2009-12-08 2011-06-23 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2012059927A (en) * 2010-09-09 2012-03-22 Rohm Co Ltd Semiconductor device and method for manufacturing the semiconductor device
JP2012190866A (en) * 2011-03-09 2012-10-04 Sansha Electric Mfg Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124251A (en) * 2009-12-08 2011-06-23 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2012059927A (en) * 2010-09-09 2012-03-22 Rohm Co Ltd Semiconductor device and method for manufacturing the semiconductor device
JP2012190866A (en) * 2011-03-09 2012-10-04 Sansha Electric Mfg Co Ltd Semiconductor device

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