JP2005332888A - Device and method for shape correction - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a shape correction device quickly restoring the defect of a wafer. <P>SOLUTION: The shape correction device 300 is provided with: a stage 370 for mounting the specimen of an object to be inspected; a defect inspecting device 320 for detecting the defect of the specimen by irradiating energy beams for inspection against the wafer W mounted on the stage 370; a defect restoration device 340 arranged in parallel to the moving direction of the stage 370 with respect to the defect inspecting device 320 to restore the defect of the specimen by irradiating energy beams for restoration against the wafer W mounted on the stage 370; and a personal computer for controlling the defect restoration device 340 in accordance with the movement of the stage 370 so as to restore the defect detected by the defect inspecting device 320. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a shape repair device for repairing defects in a sample such as a semiconductor wafer.

  For example, as described in Patent Document 1, a method for inspecting a defect of a sample such as a semiconductor wafer has been conventionally known.

Patent Document 1 describes a method for inspecting a hole pattern after dry etching. First, the wafer is transferred to the inspection apparatus, and the wafer is loaded on the inspection apparatus. Subsequently, the wafer is scanned with a secondary electron image acquisition beam to acquire a secondary electron image of the wafer. Then, the defect is detected by comparing the acquired secondary electron image with a previously stored pattern. Thereafter, the wafer inspection result is output, and the wafer is unloaded. According to this inspection method, the cause of defects can be identified early, and feedback to the dry etching process can be performed early.
JP 2002-270655 A (page 6-8, FIG. 4)

  The above-described inspection methods proposed so far have focused on detecting defects with high accuracy, and lacked an approach from the viewpoint of repairing detected defects. When repairing a wafer defect found by the above inspection method, it is necessary to transport the wafer unloaded from the inspection apparatus to the defect repair apparatus and repair the detected defect. For this reason, it takes time to transfer the wafer and the like, and it takes time to repair the shape of the wafer.

  In view of the above background, an object of the present invention is to provide a shape repair device that can quickly repair defects in a sample.

  The shape repair apparatus according to the present invention includes a stage for placing a sample to be inspected, and a defect inspection for detecting defects in the sample by irradiating the sample placed on the stage with an energy beam for inspection. And a defect repairing means arranged to be arranged in the moving direction of the stage with respect to the defect inspecting means and irradiating the specimen placed on the stage with a repairing energy beam to repair the defect of the specimen With.

  Thus, by arranging the defect inspection means and the defect repairing means side by side in the moving direction of the stage, the defect detected by the defect inspection means is moved to the irradiation position of the energy beam for repairing the defect repairing means by the movement of the stage. Moving. When the detected defect comes to the irradiation position of the energy beam for repair, the defect repair means is operated, and the defect detected by the defect inspection means can be repaired. Therefore, it is possible to detect and repair defects by a series of stage operations.

  In addition, the shape repair device of the present invention may include a control unit that controls the defect repair unit according to the movement of the stage so as to repair the defect detected by the defect inspection unit.

  With this configuration, the defect repairing means can be appropriately controlled by the control means.

  Further, the shape repair device of the present invention obtains a time at which the defect detected by the defect inspection means arrives at the irradiation position of the energy beam for repair by the movement of the stage based on the moving speed of the stage. And a control means for irradiating the defect repairing means with an energy beam for repairing at the arrival time.

  Thus, by having the control means for controlling the defect repairing means based on the moving speed of the stage, the moving speed of the stage can be changed variously.

  The shape repair device of the present invention may include a plurality of the defect inspection means arranged side by side in the moving direction of the stage.

  Thus, inspection accuracy can be improved by providing a plurality of defect inspection means. Further, if the defect inspection means is arranged with the defect repair means in between, it is possible to perform re-inspection after the defect repair.

  The shape repair device of the present invention may include a plurality of the defect repair means arranged side by side in the moving direction of the stage.

  Thus, by providing a plurality of defect repairing means, it becomes possible to reliably repair the defects. Further, if the defect repairing means is arranged with the defect inspection means sandwiched, the defect can be inspected and repaired in both the outward path and the return path when the stage is reciprocated.

  The shape repair device according to the present invention includes a defect inspection unit that detects a defect of the sample by irradiating the sample to be inspected with an energy beam for inspection, and an organometallic compound is applied to the defect detected by the defect inspection unit. Supply means for supplying, and irradiation means for irradiating the energy beam for repair to the part where the organometallic compound is supplied by the supply means.

  According to the present invention, the metal film is formed by irradiating the organometallic compound with energy rays, and the defect can be repaired. In this way, the defect is repaired by irradiating the energy beam, so that the defect can be repaired in the same processing chamber as the defect inspection performed by irradiating the energy beam, and the processing time of the defect repair can be shortened. Further, by using the organometallic compound, the organic component of the organometallic compound is decomposed by heat and the metal component is crystallized, so that a metal film having a large grain size can be formed, and the electrical resistance of the metal film can be reduced.

  Moreover, the shape repair apparatus of this invention may be equipped with the process chamber for accommodating the said defect inspection means, the said supply means, and the said irradiation means in the atmosphere evacuated.

  Thus, by irradiating energy rays in a vacuum atmosphere, inspection and repair can be performed appropriately.

  In the shape repair device of the present invention, the irradiation unit may irradiate a charged particle beam having energy of 1 eV or more and 20 keV or less as the energy beam for repair.

  By using a charged particle beam having an energy of 1 eV or more and 20 keV or less as an energy line for repair, defects can be repaired appropriately.

  The shape repair method of the present invention includes a step of placing a sample to be inspected on a stage, and a defect inspection step of detecting a defect of the sample by irradiating the sample placed on the stage with an energy beam for inspection. And a defect repairing step of irradiating the specimen with the energy beam for repairing according to the movement of the stage so as to repair the defect detected in the defect step.

  By repairing defects according to the movement of the stage in this manner, defects can be detected and repaired by a series of stage operations as in the shape repair device of the present invention.

  Further, in the shape repair method of the present invention, the defect repair step includes a supply step of supplying an organometallic compound to the defect, and irradiating the energy beam for repair to a portion where the organometallic compound is supplied in the supply step. And an irradiating step.

  By irradiating the energy beam to the portion where the organometallic compound is supplied in this way, the defect can be repaired with a metal film having a low electrical resistance, as in the shape repair device of the present invention.

  In the present invention, the defect inspection means and the defect repair means are arranged side by side in the moving direction of the stage, and the defect repairing means is controlled according to the movement of the stage, so that the defect can be detected and repaired by a series of stage operations. it can.

  Hereinafter, a shape repair device according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a shape repair device that detects and repairs a defect in a wiring pattern formed on a semiconductor wafer will be described.

  FIG. 1 is a diagram illustrating a shape repair device 300 according to the present embodiment. The shape repair device 300 includes a beam irradiation chamber 302 that performs shape repair processing, and a load lock chamber 304 for taking in and out the semiconductor wafer W before and after processing in the beam irradiation chamber 302. A vacuum transfer robot 306 for transferring the wafer W is disposed between the load lock chamber 304 and the beam irradiation chamber 302, and between the load lock chamber 304 and the wafer cassettes 308 and 310 for storing the semiconductor wafer W. The atmospheric transfer robot 312 for transferring the wafer W in the atmosphere is arranged. The beam irradiation chamber 302, the vacuum transfer robot chamber 314, and the load lock chamber 304 are evacuated to vacuum, and a valve 316 is provided at each connection portion.

  The beam irradiation chamber 302 includes two defect inspection apparatuses 320 that detect defects on the wafer W and a defect repair apparatus 340 that repairs defects on the wafer W. The defect repair device 340 is disposed between the two defect inspection devices 320.

  FIG. 2 is a diagram schematically showing the internal configuration of the beam irradiation chamber 302. Inside the beam irradiation chamber 302 is provided a stage 370 on which the wafer W is placed. The stage 370 can move in the XY directions, but the stage 370 moves in the direction indicated by the arrow A when performing defect inspection and defect repair. Thereby, the wafer W on the stage 370 is scanned by the charged particle beam. Two defect inspection apparatuses 320 and one defect repair apparatus 340 are arranged side by side in the moving direction A of the stage 370. More specifically, the irradiation positions of charged particle beams output from the defect inspection apparatus 320 and the defect repair apparatus 340 are arranged side by side in the moving direction A of the stage 370.

  FIG. 3 is a diagram illustrating a configuration of the defect inspection apparatus 320. The defect inspection apparatus 320 is a scanning electron microscope (SEM) type wafer inspection apparatus. The defect inspection apparatus 320 includes a charged particle source 322 that outputs a charged particle beam B, and a focusing lens 324, a scanning electrode 326, and an objective lens 328 are arranged along the output direction of the charged particle beam B from the charged particle source 322. Has been. Each of these components is housed in a lens barrel (not shown). The scanning electrode 326 is connected to the PC 332 via the scanning circuit 330. Further, the defect inspection apparatus 320 includes a detector 334 that detects secondary charged particles of the charged particle beam B irradiated to the wafer W to be inspected, backscattered charged particles, reflected charged particles including mirror electrons, and the like. The detector 334 is connected to the PC 332 via the A / D converter 336. The charged particle data detected by the detector 334 is processed by the PC 332, and information on the surface of the wafer W is displayed on the CRT 338.

Here, the specification of the defect inspection apparatus 320 will be described. In the present embodiment, the degree of vacuum in the lens barrel of the defect inspection apparatus 320 is 10 ⁻³ to 10 ⁻⁶ Pa, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa, more preferably 10 ⁻⁵ to 10 ⁻⁶ Pa. is there. The acceleration voltage is 0.1 V to 100 kV, preferably 1 V to 10 kV, more preferably 10 V to 10 kV. The irradiation current is 0.1 to 100 μA, preferably 1 to 100 μA, and more preferably 10 to 100 μA. The beam diameter is φ1 to 1000 nm, preferably φ10 to 1000 nm, and more preferably φ10 to 100 nm.

FIG. 4 is a diagram illustrating a configuration of the defect repair apparatus 340. The defect repairing apparatus 340 includes a charged particle source 342 that outputs a charged particle beam B, and along the output direction of the charged particle beam B from the charged particle source 342, an opening 344, a deflector 346, an opening 348, and an electromagnetic lens 350 are provided. A deflector 352 is disposed. Each of these components is housed in a lens barrel 354 that is evacuated to 10 ⁻³ to 10 ⁻⁶ Pa. A shutter 356 for blocking the charged particle beam B is provided at the exit of the lens barrel 354. Near the shutter 356 in the lens barrel 354, a detector 358 for detecting secondary charged particles, backscattered charged particles, mirror-reflected charged particles, and the like of the charged particle beam B irradiated to the wafer W is provided.

  Further, the defect repairing apparatus 340 includes a reserve tank 360 that contains an organometallic compound that drops on the defects of the wafer W outside the lens barrel 354. The organometallic compounds accommodated in the reserve tank 360 are Au, Pt, Pd, Ru, Ag, Cu, Co, Fe, Ni, Al, Si, Ti, V, Cr, Mn, Zn, Ga, Zr, Nb, It contains at least one metal element selected from In and Sn. Examples of the organometallic compound used herein include organometallic complexes such as cyclopentadienyl metal, metal alkoxide, metal β-diketonate, dipivaloylmethanato metal salt, and metal carboxylate. Further, examples of the organometallic complex include metal chelate compounds such as acetylacetone metal salt, diethanolamine metal salt, triethanolamine metal salt, diethylene glycol metal salt, acetoacetic acid alkyl ester metal salt, aronate ester metal salt, and hydrazone metal salt. Can do. Among these, Preferably, a metal alkoxide, a metal beta diketonate, a dipivaloylmethanato metal salt, a metal carboxylate, and these chelate compounds can be mentioned. These organometallic compounds are preferably dissolved or dispersed in an appropriate solvent to form, for example, a solution-like or paste-like organometallic compound.

The organometallic compound supply path 362 enters the processing chamber chamber 372 containing the stage 370 from the reserve tank 360 and extends to the irradiation position of the charged particle beam B on the stage 370. The processing chamber 372 is evacuated to 10 ⁻³ to 10 ⁻⁶ Pa.

  The charged particle source 342, deflectors 346, 352, electromagnetic lens 350, detector 358, and reserve tank 360 are connected to a PC 332 that is shared with the defect inspection apparatus 320. As a result, the PC 332 can control the entire shape repair device 300. That is, it becomes possible to control the defect repair device 340 based on the defect data from the defect inspection device 320.

Here, the specification of the defect repair apparatus 340 will be described. In the present embodiment, the acceleration voltage of the defect repair device 340 is 0.1 V to 100 kV, preferably 1 V to 10 kV, and more preferably 10 V to 10 kV. The irradiation current is 0.1 to 100 μA, preferably 1 to 100 μA, and more preferably 10 to 100 μA. The beam diameter is φ1 to 1000 nm, preferably φ10 to 1000 nm, and more preferably φ10 to 100 nm. The irradiation current and the beam diameter are preferably controlled so that the current density of the charged particle beam is 10 mA / cm ² or less, preferably 5 mA / cm ² or less, more preferably 1 mA / cm ² or less. The energy amount of the charged particle beam is appropriately determined according to the type and amount of the organometallic compound, and is, for example, 1 eV to 300 keV, preferably 1 eV to 100 keV, more preferably 1 eV to 20 keV. Can be mentioned.

  Next, the operation of the shape repair device 300 of this embodiment will be described. First, the atmospheric transfer robot 312 takes out the wafer W from the wafer cassette 308 in which the wafer W before the shape repair processing is accommodated, and transfers it to the load lock chamber 304. Subsequently, the vacuum transfer robot 306 takes out the wafer W from the load lock chamber 304 and transfers it to the beam irradiation chamber 302, and places the wafer W on the stage 370 in the beam irradiation chamber 302.

  Next, the defect inspection apparatus 320 of the shape repair apparatus 300 irradiates the wafer W with a charged particle beam while moving the stage 370 on which the wafer W is placed. Then, secondary charged particles, reflected charged particles, backscattered charged particles, and mirror electrons generated from the wafer W are detected by the detector 334, and the detection result is input to the PC 332. The PC 332 detects the defect by generating image data of the surface of the wafer W from the detection result and comparing it with a reference wiring pattern. The defect inspection apparatus 320 measures the defect type, coordinates, depth, and the like.

  The shape repair device 300 continues to detect defects with the defect inspection device 320, while controlling the defect repair device 340 based on the detected defect data. First, the amount of the organometallic compound to be supplied to the defect, the time to start irradiation with the charged particle beam, the irradiation time of the charged particle beam, the irradiation shape, the irradiation position, etc. are obtained from the defect data. For example, the charged particle beam irradiation start time t [sec] of the defect repairing apparatus 340 is set such that the moving speed of the stage 370 is S [mm / sec] and the interval between the charged particle beam irradiation positions is D [mm]. t = D / S.

  Subsequently, the defect repair device 340 repairs the defect based on the defect information obtained by the defect inspection device 320. The defect repair apparatus 340 according to the present embodiment can repair two types of defects, a defect in which the metal of the wiring is insufficient and a defect in which the metal protrudes from the wiring.

  FIG. 5A to FIG. 5D are diagrams showing a repair process for a defect in which a part of the metal constituting the wiring is insufficient. When a part of the metal constituting the wiring 380 is missing as shown in FIG. 5A, the defect repairing device 340 drops the organometallic compound 386 on the defective portion 384 as shown in FIG. . Specifically, in the defect repairing apparatus 340 shown in FIG. 4, the charged particle beam B is first bent and blanked by the deflector 346 so that the charged particle beam B is not irradiated onto the wafer W, The shutter 356 is closed to isolate the processing chamber chamber 372 and the lens barrel 354. Accordingly, it is possible to avoid a risk that the electron optical system inside the lens barrel 354 is contaminated by the evaporated product of the organometallic compound. After this treatment, an organometallic compound 386 is dropped on the defective portion of the wafer W and dried.

  After the organometallic compound 386 is dried, the defective portion 384 is irradiated with a charged particle beam. That is, the shutter 356 of the lens barrel 354 is opened, the deflector is returned to the original state, blanking of the charged particle beam is released, and the charged particle beam is irradiated onto the wafer W. At this time, as indicated by an arrow S in FIG. 5C, the region of the defective portion is scanned by the charged particle beam. Here, scanning of the charged particle beam is performed by the deflector 352. The number of scans or the energy of the charged particle beam to be irradiated is controlled based on the depth of the defect portion 386.

  FIG. 6 is a cross-sectional view showing a defective portion 384 of the wafer W. As shown in FIG. As shown in FIG. 6, when the depth of the defect portion is not constant, the number of scans of the deep defect location h1 is increased from the shallow defect location h2. By increasing the number of scans, a larger amount of metal is deposited, so that the surface level after defect repair can be made equal to the height of the insulating portion 382. By the defect repairing operation described above, the defective portion of the wiring 380 is repaired as shown in FIG.

  FIG. 7A and FIG. 7B are diagrams showing a repairing process of a defect in which metal protrudes from the wiring. As shown in FIG. 7A, when the metal protrudes from the wiring 380, the defect repair device 340 irradiates the protruding portion 388 with a charged particle beam. Thereby, the protrusion part can be excised as shown in FIG.7 (b).

  The portion of the defect repaired by the defect repair device 340 moves below the other defect inspection device 320 as the stage 370 moves. At this time, the defect inspection device 320 inspects the repaired defect and checks whether the repair is completed.

  As described above, the shape repair apparatus 300 continuously performs defect detection and defect repair according to the operation of the stage 370, and inspects and repairs the entire wafer W. After the entire shape of the wafer W is repaired, the vacuum transfer robot 306 takes out the wafer W from the beam irradiation chamber 302 and transfers it to the load lock chamber 304. Then, the atmospheric transfer robot 312 takes out the wafer W from the load lock chamber 304 and stores it in the repaired wafer W cassette 310. At this time, the wafer W may be cleaned and the surface smoothed.

  The shape repair device 300 according to the embodiment of the present invention has been described above.

  In the shape repair device 300 of this embodiment, the defect inspection device 320 and the defect repair device 340 are arranged side by side in the moving direction of the stage 370, and the defect detected by the defect inspection device 320 is irradiated with a charged particle beam for repair. The defect detected by the defect inspection apparatus 320 is repaired by operating the defect repair apparatus 340 based on the information on the defects detected by the defect inspection apparatus 320 when the position is reached. Thereby, it is possible to detect and repair defects by a series of operations of the stage 370. Therefore, after detecting the defect, it is not necessary to transport the defect to another apparatus for repairing the defect, so that the defect can be repaired quickly.

  In this embodiment mode, in the case where the metal of the wiring is lacking, after the organometallic compound is dropped and dried, the metal is deposited by irradiation with a charged particle beam. Thereby, the organic component of the organometallic compound is decomposed by heat and the metal component is crystallized, so that a metal portion 390 having a large grain size is generated as shown in FIG. Since the barrier between grains serves as a resistance that reduces electrical conductivity, the larger the grain size, the smaller the electrical resistance. According to the present embodiment, the defect can be repaired with a metal having a small electric resistance, which is suitable for repairing the wiring.

  The shape repair device 300 of the present invention has been described in detail with reference to the embodiment, but the present invention is not limited to the above-described embodiment.

  In the above-described embodiment, the shape repair device 300 including two defect inspection devices 320 and one defect repair device 340 has been described as an example, but the present invention is not limited to the above configuration. For example, one defect inspection device 320 and one defect repair device 340 may be provided. Thereby, the number of defect inspection apparatuses 320 can be reduced, and the shape repair apparatus 300 can be realized with a simple configuration. Moreover, it is good also as providing the one defect inspection apparatus 320 and the two defect repair apparatuses 340 arrange | positioned on both sides of the defect inspection apparatus 320. FIG. As a result, when the stage 370 is reciprocated, it is possible to detect and repair defects in both the forward path and the return path.

  As described above, the present invention can detect and repair defects by a series of stage operations, and is useful as a shape repair device that repairs defects in a sample such as a semiconductor wafer.

It is a figure which shows the structure of the shape restoration apparatus of embodiment. It is a figure which shows the structure of a beam irradiation chamber. It is a figure which shows the structure of a defect inspection apparatus. It is a figure which shows the structure of a defect repair apparatus. (A)-(d) is a figure which shows the process of defect repair. It is sectional drawing of the defective part of a wafer. (A) And (b) is a figure which shows the process of defect repair. It is sectional drawing of the wafer after defect repair.

Explanation of symbols

300 Shape repair device 302 Beam irradiation chamber 304 Load lock chamber 306 Vacuum transfer robot 308 Wafer cassette 310 Wafer cassette 312 Atmospheric transfer robot 314 Vacuum transfer robot chamber 316 Valve 318 Alignment 320 Defect inspection device 322 Charged particle source 324 Focusing lens 326 Scanning electrode 328 Objective lens 330 Scan circuit 332 PC
334 Detector 336 A / D converter 338 CRT
340 Defect repair device 342 Charged particle source 344 Aperture 346 Deflector 348 Aperture 350 Electromagnetic lens 352 Deflector 354 Lens barrel 356 Shutter 358 Detector 360 Reserve tank 362 Supply path 370 Stage 372 Processing chamber chamber

Claims (10)

A stage for placing a sample to be inspected;
A defect inspection means for irradiating a sample placed on the stage with an energy beam for inspection to detect defects in the sample;
Defect repairing means arranged to be arranged in the moving direction of the stage with respect to the defect inspection means and irradiating the specimen placed on the stage with a repairing energy beam to repair the defect of the specimen;
A shape repair device comprising:   The shape repair apparatus according to claim 1, further comprising a control unit that controls the defect repair unit according to the movement of the stage so as to repair the defect detected by the defect inspection unit.   Based on the moving speed of the stage, a time at which the defect detected by the defect inspection means arrives at the irradiation position of the energy beam for repair by the movement of the stage is obtained, and the defect repairing means is reached at the arrival time. The shape repair device according to claim 1, further comprising a control unit that irradiates a repair energy beam.   The shape repair apparatus according to claim 1, further comprising a plurality of the defect inspection units arranged side by side in the moving direction of the stage.   The shape repair apparatus according to claim 1, further comprising a plurality of the defect repairing units arranged side by side in the moving direction of the stage. A defect inspection means for detecting a defect of the sample by irradiating the sample to be inspected with an energy beam for inspection;
Supply means for supplying an organometallic compound to the defects detected by the defect inspection means;
Irradiation means for irradiating the energy beam for repair to the place where the organometallic compound is supplied by the supply means;
A shape repair device comprising:   The shape repair apparatus according to claim 6, further comprising a processing chamber for accommodating the defect inspection unit, the supply unit, and the irradiation unit in an evacuated atmosphere.   The shape repair apparatus according to claim 6, wherein the irradiation unit irradiates a charged particle beam having energy of 1 eV or more and 20 keV or less as the energy beam for repair. Placing the sample to be inspected on the stage;
A defect inspection step of detecting defects in the sample by irradiating an energy beam for inspection on the sample placed on the stage;
A defect repairing step of irradiating the specimen with the energy beam for repairing according to the movement of the stage so as to repair the defect detected in the defect step;
A shape restoration method comprising: The defect repairing step includes
Supplying a metalorganic compound to the defect;
Irradiation step of irradiating the energy beam for repair to the portion where the organometallic compound is supplied in the supplying step;
The shape repair method according to claim 9, further comprising:

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