JP2005322564A - Manufacturing method of display device, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a display device, and the display device having a long light emitting service life and superior productivity, and capable of reducing non-lighting defects of each organic EL devices. <P>SOLUTION: The display device is provided with a plurality of pixel apertures W arranged and formed on an insulating film on a board, and a rib 16a comprised by projecting one part of the insulating film 16 upward. A device comprised by holding an organic layer 18 between a lower electrode 15 and an upper electrode is provided in the pixel aperture W. The manufacturing method of the display device has a process of forming a plurality of the lower electrodes 15 corresponding to each device on the board, a process of forming the insulating film 16 on the board in a state covering the lower electrodes 15, and a process of forming the pixel aperture W reaching the lower electrode 15 in the insulating film 16 by lithographic treatment of carrying out pattern exposure with partially controlled light exposure, and forming the rib 16a comprised by projecting one part of the insulating film 16 upward by partially removing an upper part of the insulating film 16 between pixel apertures W to form a step shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a display device and a display device obtained thereby, and particularly to a method for manufacturing a display device including an organic electroluminescent element (organic EL element) and the display device.

  An organic EL element has attracted attention as a light-emitting element that sandwiches an organic layer including a light-emitting layer between a lower electrode and an upper electrode and can emit light with high luminance by low-voltage direct current drive.

  In an active matrix display device (that is, an organic EL display) including such an organic EL element, each pixel includes a thin film transistor (TFT), and is arranged in an insulating film on a substrate. An organic EL element connected to the TFT is provided in the plurality of pixel openings. The organic EL element includes a lower electrode patterned for each pixel while connected to a TFT, an organic layer covering the lower electrode, and an upper electrode provided with the organic layer sandwiched between the lower electrode And.

  Here, when the organic layer of each color is deposited on the lower electrode in the pixel opening, the deposition mask is supported by the insulating film provided with the pixel opening. Therefore, the insulating film is thin. If it is formed, the deposited organic mask is damaged by the deflection of the vapor deposition mask. For this reason, by forming this insulating film with a film thickness (height) such that the vapor deposition mask does not adhere to the organic layer, when the organic layer is vapor deposited on the lower electrode, it can be used as a spacer for supporting the vapor deposition mask. An example of functioning has been reported (for example, see Patent Document 1).

  On the other hand, there has been reported an example in which a rib separate from the insulating film is provided on the insulating film provided with the pixel openings. The rib serves as a spacer for supporting the deposition mask when the organic layer is deposited on the lower electrode, and is provided with a height that does not damage the organic layer (see, for example, Patent Document 2). ).

Japanese Patent No. 3401356 JP 2001-195008 A

  However, as described above, when the insulating film provided with the pixel openings supports the vapor deposition mask used when vapor-depositing the organic layer on the lower electrode in the pixel openings, the insulating film is used between the pixels. Since it has a width corresponding to the interval and is provided so as to surround the periphery of the pixel opening, the contact area with the vapor deposition mask is widened. Thereby, deposits such as dust adhering to the vapor deposition mask are likely to come into contact with the insulating film, and the deposits are likely to be pressed against the insulating film by the vapor deposition mask. For this reason, the insulating film is damaged, and there is a tendency that moisture easily enters from the damaged portion. The moisture gradually deteriorates from the peripheral edge of the organic EL element provided in the pixel opening, resulting in a problem that a non-light emitting defect occurs and a light emitting lifetime is shortened.

  In addition, when forming ribs for supporting the vapor deposition mask separately from the insulating film on the insulating film provided with the pixel openings, the ribs and the insulating film are manufactured, so that the number of manufacturing steps is increased. There was also a problem in terms of productivity, such as an increase in time and an increase in cost.

  In order to solve the above-described problems, a manufacturing method of a display device according to the present invention includes a plurality of pixel openings arranged in an insulating film on a substrate, and a rib that protrudes upward from a part of the insulating film. And a method of manufacturing a display device in which an element in which an organic layer is sandwiched between a lower electrode and an upper electrode is provided in a pixel opening, characterized by sequentially performing the following steps. First, in the first step, a step of forming a plurality of lower electrodes corresponding to each element on the substrate is performed. Next, in the second step, a step of forming an insulating film on the substrate in a state of covering the lower electrode is performed. Subsequently, in the third step, a pixel opening reaching the lower electrode is formed in the insulating film by a lithography process that performs pattern exposure with a partially controlled exposure amount, and the upper portion of the insulating film between the pixel openings is partially formed. By forming the removed step shape, a rib formed by protruding a part of the insulating film upward is formed.

  In addition, the display device of the present invention obtained by such a manufacturing method includes a lower electrode arrayed on a substrate, an insulating film that covers the substrate and has a pixel opening reaching the lower electrode, and a lower portion in the pixel opening. In a display device including an organic layer covering an electrode and an upper electrode provided with the organic layer sandwiched between the lower electrode, the insulating film includes a part of the insulating film integrally with the insulating film. It is characterized by the rib which protrudes upwards.

  According to the manufacturing method of such a display device and the display device obtained thereby, the pixel opening is formed in the insulating film and the insulation between the pixel openings is formed by lithography processing that performs pattern exposure with partially controlled exposure amount. A rib is formed by protruding a part of the film upward. As a result, the pixel openings and the ribs can be formed in the insulating film all at once, so that the ribs can be formed without increasing the number of steps.

  In addition, when an organic layer is deposited on the lower electrode in the pixel opening by forming a rib, the deposition mask is supported on the rib so that the contact area between the insulating film and the deposition mask. And the influence of deposits on the deposition mask is reduced. Furthermore, since the upper part of the insulating film is partially removed to form a stepped shape, when the vapor deposition mask is supported by the rib, the deposit on the vapor deposition mask fits into the stepped portion, and the deposit is pressed against the insulating film. Damage to the insulating film due to deposits is suppressed.

  As described above, according to the display device manufacturing method and the display device obtained thereby according to the present invention, ribs can be formed without increasing the number of steps, and therefore manufacturing time and cost can be reduced. Yes, productivity can be improved. Further, since damage to the insulating film due to deposits on the vapor deposition mask can be prevented, entry of moisture from the damaged portion can be prevented, and deterioration of the organic EL element due to moisture can be prevented. For this reason, the non-light-emitting defect of an organic EL element can be reduced and the light emission lifetime can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  Here, taking the top emission type organic EL display as an example, the detailed configuration of each member will be described in the order of the manufacturing process. In this display device, an organic EL element in which an organic layer is sandwiched between a lower electrode and an upper electrode is provided in pixel openings arranged in a matrix on an insulating film on a substrate.

  First, as shown in FIG. 1A, thin film transistors (TFTs) 12 are arrayed on a substrate 11 made of an insulating material such as glass, and wiring connected to the source and drain of the TFTs 12 is formed. 13 is formed.

  Next, as shown in FIG. 1B, a planarization insulating film 14 is formed on the substrate 11 so as to planarize the irregularities generated on the surface of the substrate 11 by forming the TFTs 12 and the wirings 13. In this case, for example, a positive photosensitive polybenzoxazole is applied by spin coating, pattern exposure is performed by irradiating only the upper portion of the wiring 13 with an exposure device, and then development is performed with a paddle type developing device. Do. Next, in order to cure the polybenzoxazole, the main baking is performed in a clean baking furnace. Thereby, the planarization insulating film 14 having the connection hole 14a reaching the wiring 13 is formed. The planarization insulating film 14 is formed with a thickness of about 2.0 μm, for example, when the unevenness in the state where the wiring 13 is formed is about 1.0 μm. Here, polybenzoxazole is used for the planarization insulating film 14, but an insulating material such as positive photosensitive polyimide may also be used. The configuration described so far corresponds to the substrate of the claims.

  Next, as shown in FIG. 1C, a plurality of lower electrodes 15 corresponding to each pixel are formed and auxiliary electrodes (not shown) are formed on the planarization insulating film 14. Here, for example, the lower electrode 15 serving as an anode is formed. In this case, first, a conductive oxide material made of, for example, indium tin oxide (ITO) is formed on the planarization insulating film 14 with a film thickness of about 20 nm by DC sputtering as an adhesion layer. Next, a metal material made of, for example, silver (Ag) is formed with a film thickness of about 100 nm by a DC sputtering method. Thereafter, a conductive oxide material made of ITO, for example, is formed on the metal material layer as a barrier layer and a hole transport layer with a film thickness of about 20 nm by DC sputtering.

  Here, the conductive oxide material layer formed as the adhesion layer may be a film thickness that can adhere to the planarization insulating film 14. When ITO is used, the conductive oxide material layer is formed with a film thickness of 5 nm to 100 nm. I will do it. Further, the metal material layer may be formed so as not to transmit emitted light and can be processed. In the case of Ag, the metal material layer is formed with a film thickness of 50 nm to 500 nm. Furthermore, the conductive oxide material layer that becomes the barrier layer and the hole transport layer is formed with a film thickness of 3 nm to 50 nm, which is a processing limit.

  Here, as a constituent material of the lower electrode 15, a three-layer structure in which a metal material layer made of Ag is sandwiched between conductive oxide material layers made of ITO is used. However, the metal material layer is an Ag alloy mainly composed of Ag. The conductive oxide material layer may be another material mainly composed of indium oxide such as indium zinc oxide (IZO).

  Subsequently, the metal material layer and the conductive oxide material layer are patterned by etching using a resist pattern (not shown) formed by a normal lithography technique as a mask. As a result, the lower electrodes 15 connected to the wirings 13 through the connection holes 14 a are arranged in correspondence with the respective pixels, and auxiliary electrodes (not shown) are formed between the lower electrodes 15.

  Thereafter, as shown in FIG. 2D, an insulating film 16 made of positive photosensitive polybenzoxazole is formed on the planarizing insulating film 14 provided with the lower electrode 15 by, for example, spin coating. Here, although positive photosensitive polybenzoxazole is used for the insulating film 16, other positive photosensitive materials such as positive photosensitive polyimide may be used.

  Next, a lithography process for transferring the pixel opening pattern and the rib pattern to the insulating film 16 is performed. In the present invention, the pixel openings and ribs can be collectively formed in the insulating film 16 by controlling the exposure amounts of the pixel opening pattern and the rib pattern, respectively, and developing in a later process. Here, the exposure process is performed twice by using two masks, a photomask provided with a pixel opening pattern and a photomask provided with a rib pattern, and the exposure time of each exposure is controlled. An example of controlling the amount will be described.

  First, as shown in FIG. 2E, the insulating film 16 is exposed by aligning a photomask 21 provided with a substantially rectangular pixel opening pattern on the substrate 11 with an exposure apparatus. At this time, since the insulating film 16 is formed of a positive photosensitive material, exposure is performed using the photomask 21 in which the pixel opening pattern is opened. Here, in the development step described later, exposure is performed so that the insulating film 16 reaches a depth reaching the lower electrode 15 so that the structure is soluble in the developer.

  Next, as shown in FIG. 3F, the insulating film 16 is exposed using a photomask 22 provided with a rib pattern. At this time, since the insulating film 16 is formed of a positive photosensitive material, a photomask 22 in which the rib pattern is shielded from light is used. Here, for example, it is assumed that a rib pattern is provided so as to form strip-shaped ribs along the four sides of a substantially rectangular pixel opening at a substantially central portion between adjacent pixel opening regions. Then, in the developing process described later, the pixel opening pattern described above is formed so that the region except the pixel opening pattern and the rib pattern in the insulating film 16 has a structure soluble to the developing solution up to a predetermined depth of the insulating film 16. It is assumed that half exposure controlled to an exposure time that is about half of the exposure process for transferring the image is performed.

  Subsequently, as shown in FIG. 3G, by performing development using a paddle type developing device, a pixel opening W that reaches the lower electrode 15 is formed in the insulating film 16, and between the pixel openings W. By forming a stepped shape by removing the upper end portion of the insulating film 16, the rib 16a in a state where the central portion of the insulating film 16 protrudes upward is formed. Here, the rib 16a is formed in a state where the central portion of the insulating film 16 between the pixel openings W protrudes upward, but the end portion of the insulating film 16 between the pixel openings W protrudes upward. The rib 16a may be formed. However, as in the present embodiment, forming the rib 16a with the central portion of the insulating film 16 between the pixel openings W protruding upward is in a state where the deposition mask is in contact with the rib 16a in a later step. When the organic layer is deposited on the lower electrode 15 in the pixel opening W, the step portions where the deposit on the deposition mask is accommodated are provided on both sides of the rib 16a, so that the deposit may be pressed against the insulating film 16. Since it is prevented, it is preferable.

  Thereafter, the processed insulating film 16 is cured by performing main baking in a clean baking furnace. Thus, the insulating film 16 is processed so that the height H1 of the rib 16a is 1.2 μm and the height H2 of the lower layer portion of the insulating film 16 that supports the rib 16a is 1.0 μm. The height H1 of the rib 16a is controlled by the exposure amount when transferring the rib pattern to the insulating film 16, here, the exposure time. The height H1 is as high as possible within the allowable range of the thickness of the display device. preferable.

  Further, the narrower the width of the rib 16a is within the range that can be exposed, the smaller the contact area with the vapor deposition mask used when forming the organic layer on the lower electrode 15 in the subsequent process, and the deposits on the vapor deposition mask are reduced. This is preferable because the stepped portion of the insulating film 16 to be accommodated becomes wide.

  Here, the exposure amount of the pixel opening pattern and the rib pattern is controlled by controlling the exposure time of the first exposure and the second exposure, but it can also be controlled by the intensity of the exposure light of each exposure. In this case, the insulating film 16 is changed to a structure soluble in the developer to a predetermined depth by controlling the intensity of the exposure light in the first exposure and the second exposure.

  Further, as shown in the top view of FIG. 4A, the rib 16a is formed in a strip shape along the four sides of the substantially rectangular pixel opening W in the substantially central portion between the adjacent pixel openings W. Yes. Here, as shown in this figure, when the rib 16a is formed on the auxiliary wiring 15a arranged in a row between the pixel openings W and provided in the same layer as the lower electrode 15, an auxiliary is provided. The rib 16a is provided at a position excluding the connection hole 17 with the auxiliary wiring 15a provided on the insulating film 16 on the wiring 15a. This connection hole 17 is formed together with the pixel opening W, and when the auxiliary wiring 15a is provided between the lower electrodes 15, the pixel opening pattern described with reference to FIG. The insulating film 16 is exposed using the photomask 21 provided with the connection hole pattern together with the opening pattern.

  Here, FIG. 4B shows a configuration diagram of the vapor deposition mask 23 used in a state where the organic layer is vapor-deposited on the lower electrode 15 in the pixel opening W in a subsequent process and in contact with the rib 16a. As shown in this figure, the length L1 of the rib 16a described above (see FIG. 4A) is longer than the opening width L1 ′ of the opening portion 23a of the vapor deposition mask 23 in the length L1 direction of the rib 16a. It is preferable to form as follows. Accordingly, even when the vapor deposition mask 23 is aligned and brought into contact with the rib 16a, the rib 16a is prevented from entering the opening 23a of the vapor deposition mask 23.

  Further, as shown in the top view of FIG. 5, the rib 16 a may be formed only in one direction between the pixel openings W. By forming the rib 16a in this way, the contact area between the vapor deposition mask used when forming the organic layer on the lower electrode 15 in the pixel opening W and the rib 16a is further reduced, and the influence of the deposit on the vapor deposition mask. Can be reduced. Here, since the rib 16a is formed along the short side direction of the substantially rectangular pixel opening W, the length L2 of the rib 16a is set to the opening 23a of the vapor deposition mask 23 shown in FIG. It is preferable to form the rib 16a so as to be longer than the opening width L2 ′ of the rib 16a in the length L2 direction, so that the rib 16a enters the opening 23a of the vapor deposition mask 23 during alignment of the vapor deposition mask 23. It is prevented.

As described above, after the ribs 16a are formed on the insulating film 16, as shown in FIG. 6, baking is performed in a vacuum atmosphere, and the substrate 11 is pretreated with O ₂ plasma. Next, the organic layer 18 of the organic EL element of each color is formed on the lower electrode 15 in the pixel opening W while maintaining a vacuum atmosphere. In this case, the substrate 11 is transported to a chamber for depositing, for example, the blue organic layer 18 in a vacuum atmosphere, and the deposition mask 23 described in FIG. 4B is aligned on the rib 16a. In a contact state, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer are sequentially deposited on the lower electrode 15 in the pixel opening W. The green organic layer and the red organic layer are similarly formed.

  The subsequent steps are performed by a method similar to a method for manufacturing a normal organic EL display. That is, although illustration is omitted here, an electron injection layer made of, for example, LiF is formed on the organic layer 18 and the insulating film 16, and then made of, for example, a semi-permeable MgAg alloy on the electron injection layer. Then, an upper electrode to be a cathode is formed. Subsequently, after forming a transparent conductive layer made of, for example, IZO on the upper electrode, a protective film made of silicon nitride is formed on the transparent conductive layer. Next, a thermosetting resin is applied on the protective film and the peripheral edge of the substrate 11, and the resin sealing is performed by heating in a state where a substrate made of glass, for example, is bonded to the resin.

  By the above manufacturing method, the light generated in the light emitting layer of the organic layer 18 is reflected on the lower electrode 15 side including the Ag alloy film, and taken out from the upper electrode side formed of the semi-transmissive MgAg alloy. A light emitting organic EL display can be obtained.

  According to the manufacturing method of such a display device and the display device obtained thereby, the first exposure using the photomask 21 provided with the pixel opening pattern and the photomask 22 provided with the rib pattern were used. The pixel opening pattern and the rib pattern are transferred to the insulating film 16 by performing the second exposure in an overlapping manner. At this time, since the exposure time is controlled by controlling the exposure time of each exposure step, the pixel openings W and the ribs 16a can be collectively formed in the insulating film 16 by development. For this reason, the rib 16a can be formed without increasing the number of steps. Therefore, the manufacturing time can be shortened and the cost can be reduced, and the productivity can be improved.

  Further, by forming the ribs 16a, the contact area between the vapor deposition mask 23 and the insulating film 16 used when vapor-depositing the organic layer 18 on the lower electrode 15 in the pixel opening W is reduced, and the deposits on the vapor deposition mask 23 are deposited. The influence on the insulating film 16 is reduced. Further, when the vapor deposition mask 23 is supported by the ribs 16 a, the deposit on the vapor deposition mask 23 is stored in the step portion of the insulating film 16, thereby preventing the deposit from being pressed against the insulating film 16. For this reason, damage to the insulating film 16 due to deposits is prevented. Therefore, it is possible to prevent moisture from entering from the damaged portion and to prevent deterioration of the organic EL element due to moisture. For this reason, the non-light-emitting defect of an organic EL element can be reduced and the light emission lifetime can be improved.

  In the above-described embodiment, a positive photosensitive material is used for the insulating film 16, but a negative photosensitive material may be used. In this case, a photomask provided with an inverted pattern of the photomask 21 and the photomask 22 is used. Further, after the rib pattern is transferred to the insulating film 16, the pixel opening pattern is transferred to the insulating film 16, and the respective exposure amounts are controlled. Thereby, the pixel openings W and the ribs 16a can be formed in the insulating film 16 at once. However, if the insulating film 16 is formed of a positive photosensitive material, the side wall of the insulating film 16 between the pixel openings W can be formed to have a forward taper shape, which is structurally stable and is lower. By improving the coverage of the organic layer 18 provided on the electrode 15, not only is the short circuit between the lower electrode 15 and the upper electrode prevented, but also the upper electrode provided in a state of covering the insulating film 16 and the organic layer 18. Since coverage property can be improved, it is preferable.

  In the embodiment described above, in the exposure when transferring the pixel opening pattern and the rib pattern to the insulating film 16, the exposure amount is controlled by controlling the exposure time. However, the pixel opening pattern and the rib are formed on the photomask. By using a halftone photomask provided with a pattern and a stepped portion pattern, the pixel opening pattern and the rib pattern can be transferred to the insulating film 16 by one exposure. In this case, since a positive photosensitive material is used for the insulating film 16 in the embodiment, the pixel opening pattern of the halftone photomask is configured to transmit the exposure light, and the rib pattern is shielded from light. Provided in a state. Further, as shown in FIG. 3G, in order to form a stepped portion of the insulating film 16 for projecting the rib 16a upward, the pattern transmittance of the stepped portion is controlled. It is possible to control the height H1 of the rib 16a by controlling the transmittance of the step pattern. By exposing the insulating film 16 using such a halftone photomask, the pixel opening pattern and the rib pattern can be transferred to the insulating film with a single exposure, so that the productivity can be further improved.

  When a negative photosensitive material is used for the insulating film 16, the pixel opening pattern of the above-described halftone photomask is configured to be shielded from light, and the rib pattern is provided so that the exposure light is transmitted. Further, the height H1 of the rib 16a can be controlled by controlling the transmittance of the pattern of the step portion.

  In the display device described above, the configuration in which the lower electrode 15 is an anode and the upper electrode is a cathode has been described. However, the lower electrode 15 may be a cathode and the upper electrode may be an anode. In this case, the organic layer 18 in which the electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer are stacked in this order through the electron injection layer in the pixel opening W from which the lower electrode 15 is exposed. The upper electrode is formed so as to cover the entire surface of the substrate 11 in this state.

  Further, in the above embodiment, the top emission display device has been described. However, by using a reflective material for the upper electrode and a transmissive material for the lower electrode 15, a bottom emission type in which emitted light is extracted from the lower electrode 15 side. The present invention can also be applied to a display device such as a double-sided light emitting display device in which the lower electrode 15 and the upper electrode are formed of a semi-transmissive material and the emitted light is extracted from both sides. Applicable.

  Further, although an example of an active matrix display device has been described in the above embodiment, a simple matrix display device can also be applied. In this case, the first insulating film is formed in a state where the space between the lower electrodes provided in a stripe shape on the substrate is embedded. Thereafter, a second insulating film is formed on the lower electrode and the first insulating film to form a pixel opening in a state orthogonal to the lower electrode, and an upper portion of the second insulating film between the pixel openings is partially formed. By forming the stepped shape that has been removed, a rib formed by projecting a part of the second insulating film upward is formed.

  Further, specific examples of the present invention will be described.

  By a method similar to that of the above embodiment, a top emission type display device (panel Nos. 1 to 3) configured as shown in FIG. In addition, as a comparative example to this, a display device (panel Nos. 4 to 6) having a configuration including the insulating film 16 in a state where the rib 16a is not provided was manufactured. Note that the insulating film 16 in the display devices of the above examples and comparative examples was formed to have the same film thickness.

  These display devices were driven to measure the number of non-luminous defects that gradually deteriorated from the periphery of the organic EL element, and the results are shown in Table 1.

  As shown in Table 1, it was confirmed that the display device of the example provided with the ribs 16a significantly reduced the number of non-light emitting defects as compared with the display device of the comparative example not provided with the ribs 16a. . This suggests that the display device of this example has few non-light emitting defects and a long light emission lifetime.

It is manufacturing process sectional drawing (the 1) for describing embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing (the 2) for describing embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing (the 3) for describing embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is a top view for demonstrating embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is a top view for demonstrating embodiment which concerns on the manufacturing method of the display apparatus of this invention. It is manufacturing process sectional drawing (the 4) for describing embodiment which concerns on the manufacturing method of the display apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11 ... Substrate, 15 ... Lower electrode, 16 ... Insulating film, 16a ... Rib, 18 ... Organic layer, 21, 22 ... Photomask, 23 ... Deposition mask, W ... Pixel opening

Claims (9)

A plurality of pixel openings arranged in an insulating film on a substrate, and a rib that protrudes upward from a part of the insulating film, and an organic layer is sandwiched between the lower electrode and the upper electrode in the pixel opening A manufacturing method of a display device provided with an element comprising:
Forming a plurality of lower electrodes corresponding to the respective elements on the substrate;
A second step of forming the insulating film on the substrate in a state of covering the lower electrode;
A step in which the pixel opening reaching the lower electrode is formed in the insulating film by lithography that performs pattern exposure with partially controlled exposure amount, and the upper part of the insulating film between the pixel openings is partially removed And a third step of forming a rib formed by projecting a part of the insulating film upward. In the manufacturing method of the display device according to claim 1,
In the third step, exposure is performed to transfer the pixel opening pattern to the insulating film using the first photomask provided with the pixel opening pattern, and the second photomask provided with the rib pattern is used. The method for manufacturing a display device, wherein the exposure amount is controlled by overlapping exposure for transferring the rib pattern to the insulating film. In the manufacturing method of the display device according to claim 1,
In the third step, the pixel opening pattern, the rib pattern, and the stepped portion pattern are provided, and the exposure amount is reduced by using a halftone photomask in which the transmittance of the stepped portion pattern is controlled. A method for manufacturing a display device, comprising: controlling the display device. In the manufacturing method of the display device according to claim 1,
The method for manufacturing a display device, wherein the insulating film is made of a positive photosensitive material. In the manufacturing method of the display device according to claim 1,
In the third step, the rib is formed so that a central portion of the insulating film between the pixel openings protrudes upward. A method for manufacturing a display device, comprising: In the manufacturing method of the display device according to claim 1,
After the third step, the method includes the step of vapor-depositing the organic layer on the lower electrode in the pixel opening with a vapor deposition mask in contact with the rib. Between the lower electrode arranged on the substrate, an insulating film covering the substrate and having a pixel opening reaching the lower electrode, an organic layer covering the lower electrode in the pixel opening, and the lower electrode In a display device comprising an upper electrode provided in a state of sandwiching the organic layer in
The display device, wherein the insulating film is provided with a rib formed integrally with the insulating film so that a part of the insulating film protrudes upward. The display device according to claim 7, wherein
The display device, wherein the insulating film is made of a positive photosensitive material. The display device according to claim 7, wherein
The display device according to claim 1, wherein the rib is provided in a state where a central portion of the insulating film between the pixel openings protrudes upward.

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