JP2005308546A - History sensor, semiconductor integrated circuit and mounting body - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a history sensor, a semiconductor integrated circuit and a mounting body having an unenlarged system, excellent ubiquitousness, and suitable for management in conveyance, preservation or the like of an article. <P>SOLUTION: This history sensor is equipped with a clocking part 1 for clocking by an attenuation characteristic of the charge attenuating with a fixed attenuation time constant τ<SB>s</SB>, a charge storage part 2 for storing charge information at a specific time in the attenuation characteristic, and a switch SW1 for conducting transitionally by a temperature of a vibration higher than a fixed level, returning again to a blocked state, and distributing the charge from the clocking part 1 to the charge storage part 2 by conduction. In the sensor, a transitionally conducting time t<SB>0</SB>is identified by the charge information and the attenuation time constant τ<SB>s</SB>. In this case, the clocking part 1 is equipped with a clocking part capacitor (first capacity) C<SB>1</SB>, and a reference resistance R<SB>m</SB>connected in parallel to the clocking part capacitor (first capacity). On the other hand, the charge storage part 2 is equipped with a storage part capacitor (second capacity) C<SB>2</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a history sensor capable of measuring the time at which an abnormal temperature, vibration, etc. occurs and reading the data retroactively, a semiconductor integrated circuit in which this history sensor is integrated, and this semiconductor integrated circuit The present invention relates to a mounting body equipped with a circuit.

Conventionally, in order to retrospectively investigate vibrations in the past history, a portable vibrometer having a vibration measuring means (detector) for measuring vibrations of a measurement object has been proposed (see Patent Document 1). The vibrometer described in Patent Document 1 includes an internal clock (clock), time signal acquisition means (antenna) for acquiring a time signal from the outside by radio, and a time signal acquired by the time signal acquisition means. And a calibration means (CPU) for calibrating the time of the internal clock. Then, the time signal acquisition means acquires the time signal from the outside wirelessly, and the calibration means calibrates the time of the internal clock based on the time signal.
As described above, in the past, the history of occurrence of abnormal temperatures and vibrations in the past has been retrospectively recorded by continuously storing signals from temperature sensors and vibration sensors in a data recording device, and then analyzing the changes over time by computer analysis. Thus, it is a common technique to obtain the time when the maximum value occurs.
JP 2003-57105 A

  However, when a conventional history sensor obtains the time at which the maximum value such as temperature occurs, it is necessary to perform data analysis by a computer after continuously recording information from the sensor. For this reason, since the system becomes large-scale and takes an analysis time, it is not suitable for management in transportation and storage of various articles requiring ubiquitous properties.

  In view of the above-mentioned problems, the present invention is not limited to a large-scale system, and is excellent in ubiquitousness, transportation of freight, and delivery of frozen and refrigerated products when retroactively reading the time when the maximum values such as temperature and mechanical vibration occur. It is an object of the present invention to provide a history sensor, a semiconductor integrated circuit in which the history sensor is integrated, and a mounting body on which the semiconductor integrated circuit is mounted, which are suitable for management of various articles such as transportation and storage.

  In order to achieve the above-mentioned object, the first feature of the present invention is that (a) a timekeeping unit that measures time by a charge attenuation characteristic that attenuates with a constant attenuation time constant, and (b) a temperature or vibration that exceeds a certain level. (C) a switch that is turned on and turned off again; and (c) a charge storage unit that distributes charges from the timekeeping unit by turning on the switch. The gist of the present invention is that it is a history sensor for identifying.

  The second feature of the present invention is (a) a timekeeping section that measures time by a charge attenuation characteristic that decays with a constant decay time constant; And (c) the charge storage unit to which the charge is distributed from the timing unit by the conduction of the switch, and (d) the peripheral circuit for reading out the charge accumulated in the charge storage unit from the charge storage unit. The gist of the present invention is that it is a semiconductor integrated circuit that is integrated on a substrate and identifies the time of transient conduction based on charge attenuation characteristics.

  The third feature of the present invention is (a) a first timekeeping section that measures time by a charge decay characteristic that decays with a constant decay time constant, and conducts transiently at a temperature or vibration above a certain level, and then enters a shut-off state again. A first sensor unit including a first charge storage unit that distributes charges from the first timing unit by conduction, and (b) a second timing unit that counts by the attenuation characteristics of the charge that is attenuated by the attenuation time constant. A second switch that is transiently conducted at a temperature or vibration at a level different from a certain level or vibrations and is again cut off, and a second sensor unit that distributes charges from the second timing unit by conduction; Peripheral circuits for reading out the charges accumulated in the first and second charge storage units from the first and second charge storage units are integrated on the same semiconductor substrate, and transient conduction is achieved by charge attenuation characteristics. Semiconductor to identify the time And summarized in that an integrated circuit.

  The fourth feature of the present invention is: (a) a plastic substrate, and (b) a time counter that is mounted on the plastic substrate and measures the decay characteristics of charges that decay with a constant decay time constant, a temperature above a certain level, or The same semiconductor as the switch that becomes transiently conductive due to vibration and switches off again, the charge storage part that distributes the charge from the timekeeping part by conduction, and the peripheral circuit that reads the charge stored in the charge storage part from the charge storage part A semiconductor integrated circuit integrated on the substrate; and (c) an antenna mounted on the plastic substrate, supplying power to the semiconductor integrated circuit and performing data communication with the peripheral circuit, and by an attenuation time constant, The gist of the present invention is that it is a mounting body that identifies the time when transient conduction has occurred.

  According to the present invention, when the time when the maximum value such as temperature and mechanical vibration occurs is retroactively, the system does not become large-scale, and is excellent in ubiquitous properties, such as transportation of goods, delivery of frozen refrigerated goods, etc. It is possible to provide a history sensor, a semiconductor integrated circuit in which the history sensor is integrated, and a mounting body on which the semiconductor integrated circuit is mounted, which are suitable for management in transportation, storage and the like of articles.

  Hereinafter, first and second embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings. Further, the following first and second embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is a component part. The material, shape, structure, arrangement, etc. are not specified below. The technical idea of the present invention can be variously modified within the scope of the claims.

(First embodiment)
As shown in FIG. 1, the history sensor according to the first embodiment of the present invention includes a time measuring unit 1 that measures time by an attenuation characteristic of charges that are attenuated with a constant attenuation time constant τ _s , a temperature of a certain level or higher, A switch SW1 that is transiently conducted by vibration and is again cut off, and a charge storage unit 2 to which charges are distributed from the time measuring unit 1 by the conduction of the switch SW1. The time t ₀ when the transient conduction is performed is identified based on the charge attenuation characteristic. Here, the timer unit 1 includes a clock unit capacitors (first capacitor) C _1, and a reference resistor R _m which is connected in parallel to the timer unit capacitor (first capacitor). Meanwhile, the charge storage unit 2, a storage unit capacitors (second capacitor) C _2.

That is, as shown in FIG. 1, two first capacitors (timer capacitors) C ₁ and second capacitors (memory capacitors) C ₂ are formed on the semiconductor substrate 11, and are connected to each other by a switch SW1. Has been. First, at time t = 0, the first capacitor C ₁ is charged by the charging terminals 101 and 102 to accumulate the initial charge Q ₀ . As shown in FIG. 2, the initial charge Q ₀ is attenuated by a constant decay time constant τ _s = R _m · C ₁ due to the leakage resistance component of the first capacitor C ₁ . That is, at t ≦ t ₀
Q ₁ (t) = Q ₀ exp (−t / τ _s ) (1)
If a certain level or more of vibration is applied from the outside at time t = t ₀ before Q ₁ (t) completely disappears, the vibration SW is turned on, and the charge held in the first capacitor C ₁ A part of Q (t ₀ ) is transferred to the second capacitor C ₂ . That is, assuming that Δt is a minute time required for a part of the charge Q (t ₀ ) to be transferred to the second capacitor C ₂ , the charge Q (t ₀ ) is the first capacitor at time t = t ₀ + Δt. Since the capacitance is divided between C ₁ and the second capacitor C ₂ , the charge of the first capacitor C ₁ is:
Q ₁ (t ₀ + Δt) = Q ₁ (t ₀ ) (C ₁ / (C ₁ + C ₂ )) (2)
The charge of the second capacitor C ₂ is:
Q ₂ (t ₀ + Δt) = Q ₁ (t ₀ ) (C ₂ / (C ₁ + C ₂ )) (3)
It becomes. Further, at t ₀ <t, the charge of the first capacitor C ₁ is
Q ₁ (t) = Q ₁ (t ₀ ) (C ₁ / (C ₁ + C ₂ )) exp (− (t−t ₀ ) / τ _s ) (4)
It attenuates at. If the second capacitor C ₂ is an ideal capacitor (capacitor) with no charge leakage, the charge amount Q ₁ ( ₂₎ of the second capacitor C ₂ at time t = t ₀ + Δt expressed by the equation (3). t ₀ ) (C ₂ / (C ₁ + C ₂ )) is maintained at a constant value, which can be measured later and calculated from the equation (3). That is, in the charge decay theoretical curve B of the first capacitor C ₁ (see FIG. 2), the switch SW1 is turned on at the time t ₀ when the switch SW1 is turned on, that is, after the charging of the first capacitor C ₁ is completed. The time until turning ON is calculated from the equation (3): Q ₁ (t ₀ ) = Q ₀ exp (−t ₀ / τ _s ) (5)
It can be estimated from the value of. However, if the leakage of the second capacitor C ₂ can not be ignored retroactive time it can not be uniquely determined. For this reason, two ideal capacitors (capacitors) having extremely small leakage are prepared as a first capacitor C ₁ and a second capacitor C ₂ , and the first capacitor C ₁ has a reference resistance R _m as shown in FIG. Are arranged in parallel, and the leakage time constant τ _s = R _m · C ₁ , so that it will leak appropriately within the measurement time. That is, as a result, the parallel circuit of the first capacitor C ₁ and the reference resistor R _m plays the role of an accurate clock with the decay time constant τ _s = R _m · C ₁ .

In general, when the temperature or vibration threshold exceeds a plurality of times within the measurement time, an error occurs in the retroactive time calculation. This is because the charge once transferred to the second capacitor C ₂ returns to the first capacitor C ₁ again (of course, this problem does not occur when a nonvolatile memory is used as the second capacitor C ₂ ). As this measure,
C ₂ >> C ₁ (6)
This can be solved. That is, the first voltage V1 of the capacitor C ₁ before the charge transfer is V1 >> V2 with respect to the second voltage of the capacitor C ₂ after charge transfer V2. Accordingly, the amount of charge transfer to the first capacitor C ₁ is extremely small with respect to the threshold overrun for the second time and thereafter.

  FIG. 3A shows a MEMS switch that opens and closes by mechanical vibration as an example of the switch SW1 shown in FIG. In FIG. 3A, a cavity is provided on the surface of the semiconductor substrate 11 made of single crystal Si. One end of an elastic beam 15 made of polycrystalline silicon doped with impurities (doped polysilicon) is fixed to the upper surface of the semiconductor substrate 11 located around the cavity (left side in FIG. 3A), It constitutes a cantilever structure. On the upper surface of the semiconductor substrate 11, a first electrode wiring 12 made of a metal film such as aluminum (Al), copper (Cu), or gold (Au) is connected to a fixing portion of the elastic beam 15. On the other hand, a second electrode wiring 13 made of a metal film of Al, Cu, Au or the like is disposed at the bottom of the cavity, and the second electrode wiring 13 is connected to the cavity via a cavity side wall (not shown). It extends to the upper surface of the semiconductor substrate 11 located on the periphery (right side in FIG. 3A). Due to the mechanical vibration, the free end of the cantilever structure is in contact with the second electrode wiring 13, whereby the first electrode wiring 12 and the second electrode wiring 13 are electrically short-circuited. A “weight” made of a metal film may be disposed at the tip of the free end. The cavity can be formed by selectively etching single crystal Si as the semiconductor substrate 11 with a chemical solution such as an anisotropic etchant, for example, tetramethylammonium hydroxide (TMAH).

  FIG. 3B shows a temperature switch having a MEMS structure as another example of the switch SW1 shown in FIG. 3B, similarly to FIG. 3A, a cavity is provided on the surface of the semiconductor substrate 11 made of single crystal Si. One end of a bimetal beam 17 made of polycrystalline silicon doped with impurities (doped polysilicon) is fixed to the upper surface of the semiconductor substrate 11 located around the cavity (left side in FIG. 3B), It constitutes a cantilever structure. The bimetal beam 17 has a laminated structure of a first metal layer 21 and a second metal layer 22 having different thermal expansion coefficients. On the upper surface of the semiconductor substrate 11, a first electrode wiring 12 made of a metal film such as Al, Cu, Au or the like is connected to a fixing portion of the bimetal beam 17. On the other hand, a second electrode wiring 13 made of a metal film of Al, Cu, Au or the like is disposed at the bottom of the cavity, and the second electrode wiring 13 is connected to the cavity via a cavity side wall (not shown). It extends to the upper surface of the semiconductor substrate 11 located on the periphery (right side in FIG. 3B). Since the bimetal beam 17 is bent due to the temperature change, the free end of the cantilever beam structure comes into contact with the second electrode wiring 13 and the first electrode wiring 12 and the second electrode wiring 13 are electrically short-circuited. .

FIG. 4 is a schematic bird's-eye view showing a specific structure of the history sensor according to the first embodiment of the present invention. In FIG. 4, the MEMS switch shown in FIG. 3A and the first capacitor C ₁ and the second capacitor C ₂ made of MIM capacitors are integrated on the semiconductor substrate 11 to realize the circuit configuration shown in FIG. doing. As shown in FIG. 4, a cavity is provided in the vicinity of the center of the surface of the semiconductor substrate 11, and one end of the elastic beam 15 is fixed to the upper surface of the semiconductor substrate 11 located on the left side of the cavity. It is composed. A first electrode wiring 12 made of a metal film such as Al is connected to the fixed portion of the elastic beam 15 and led to the charging terminal (bonding pad) 101. A part of the first electrode wiring 12 is branched to constitute the upper electrode of the MIM capacitor serving as the first capacitor C ₁ . The fixed portion of the resilient beams 15 are further resistance wiring R _m is provided, connected to a ground wire 14 made of a metal film of Al or the like. Resistance wire R _m is constituted by polycrystalline silicon (Bu polysilicon), the impurity concentration of polycrystalline silicon, may be adjusted resistance value. The resistance wiring R _m may be composed of a metal thin film, but in the case of a metal thin film, the resistance wiring R _m may be composed of a meander line in order to increase the resistance length. The ground wiring 14 is a wiring for connecting the charging terminal (bonding pad) 102 and the measurement terminal (bonding pad) 104, and further becomes the lower electrode of the MIM capacitor that becomes the first capacitor C ₁ and the second capacitor C ₂ by branching. It constitutes the lower electrode of the MIM capacitor. The capacitor insulating film sandwiched between the lower electrode and the upper electrode of the MIM capacitor constituting the first capacitor C ₁ and the capacitor insulating film sandwiched between the lower electrode and the upper electrode of the MIM capacitor constituting the second capacitor C ₂ are silicon oxide. A film (SiO ₂ film) may be used. In order to increase the values of the first capacitor C ₁ and the second capacitor C _2, an insulating material having a relative dielectric constant ε _r larger than that of the SiO ₂ film is preferable. For example, if the ONO film is formed of a three-layer laminated film of silicon oxide film (SiO ₂ film) / silicon nitride film (Si ₃ N ₄ film) / silicon oxide film (SiO ₂ film), the relative dielectric constant ε _r = 5 The same degree as ~ 5.5 is obtained. Further, strontium oxide is ε _r = 6 (SrO) film, a silicon nitride is _{ε r = 7 (Si 3 N} 4) film, an aluminum oxide is _{ε r = 8~11 (Al 2 O} 3) Film, magnesium oxide (MgO) film with ε _r = 10, yttrium oxide (Y ₂ O ₃ ) film with ε _r = 16-17, hafnium oxide (HfO ₂ ) with ε _r = 22-23 Film, zirconium oxide (ZrO ₂ ) film with ε _r = 22-23, tantalum oxide (Ta ₂ O ₅ ) film with ε _r = 25-27, bismuth oxide (Bi ₂ ) with ε _r = 40 Any one single-layer film of O ₃ ) film or a composite film in which a plurality of these films are laminated can be used as the capacitor insulating film. Ta ₂ O ₅ and Bi ₂ O ₃ lacks thermal stability at the interface between the polycrystalline silicon (Note, each value of the relative permittivity epsilon _r exemplified here, as it can vary by production method, if Can deviate from these values.) Furthermore, a capacitor insulating film of a silicon oxide film and a composite film thereof may be used. The composite film may have a laminated structure of three or more layers. That is, a capacitor insulating film including at least a material having the relative dielectric constant ε _r of 5 to 6 or more is preferable. However, in the case of a composite film, it is preferable to select a combination in which the effective relative dielectric constant ε _reff measured for the entire capacitor insulating film is 5 to 6 or more. A capacitor insulating film made of a ternary compound such as a hafnium aluminate (HfAlO) film may also be used. That is, at least one element of strontium (Sr), aluminum (Al), magnesium (Mg), yttrium (Y), hafnium (Hf), zirconium (Zr), tantalum (Ta), and bismuth (Bi) is included. An oxide or silicon nitride containing these elements can be used as the capacitor insulating film. Ferroelectric materials such as strontium titanate (SrTiO ₃ ) and barium strontium titanate (BaSrTiO ₃ ) can also be used as a high dielectric constant capacitor insulating film, but they are thermally stable at the interface with polycrystalline silicon. It is necessary to consider the lack of properties and the hysteresis characteristics of the ferroelectric.

As shown in FIG. 4, a second electrode wiring 13 made of a metal film such as Al is disposed at the bottom of the cavity, and the second electrode wiring 13 extends to the right side of the cavity via the sidewall of the cavity. Further, it is led to a measurement terminal (bonding pad) 103 located near the right end of the semiconductor substrate 11. A portion of the second electrode wiring 13 branches constitute the upper electrode of the second capacitor C ₂ become MIM capacitor.

  According to the history sensor according to the first embodiment of the present invention, when the time when the maximum value such as temperature or mechanical vibration occurs is retroactively, the system does not become large-scale, and is excellent in ubiquity. It is possible to provide a history sensor suitable for management in transportation, storage, etc. of various articles such as transportation and delivery of frozen refrigerated goods.

(Second Embodiment)
As shown in FIG. 5, the history sensor according to the second embodiment of the present invention includes a timekeeping unit 1 that measures time by an attenuation characteristic of a charge that is attenuated with a constant attenuation time constant τ _s , and a specific one in the attenuation characteristic. Switch for storing charge information at time and transiently conducting at a temperature or vibration above a certain level and switching off again, and distributing the charge from the time measuring unit 1 to the charge storing unit 2 by conduction. SW1 is provided, and the time t _{0 at} which the transient conduction is performed is identified by the charge information and the decay time constant τ _s . Here, the timer unit 1 includes a clock unit capacitors (first capacitor) C _1, and a reference resistor R _m which is connected in parallel to the timer unit capacitor (first capacitor). On the other hand, the charge storage unit 2 includes a nonvolatile memory 32. As shown in FIG. 5, the timekeeping unit 1 according to the first embodiment is further provided with an initial charge setting unit 3 that charges the timepiece capacitor (first capacitor) C ₁ to the initial charge Q _0. It is different from the history sensor. The initial charge setting unit 3 includes a series circuit including an antenna (charging antenna) 31 and a rectifier diode D1 that rectifies a current induced by electromagnetic energy received by the antenna 31. The first capacitor C ₁ is charged to the initial charge Q ₀ by this series circuit connected in parallel to the (first capacitor) C ₁ .

The history sensor according to the second embodiment is attenuated in the internal resistance of the charge Q (t) is primarily rectifier diode D1 to be accumulated in the first capacitor C _1. The method of retrospectively obtaining the time t ₀ when the vibration / temperature switch SW1 is turned on is the same as that in the history sensor according to the first embodiment.
As shown in FIG. 5, when the first capacitor C ₁ is charged using the charging antenna 31, there is a possibility that the initial charge amount Q ₀ to the first capacitor C ₁ cannot be set constant. As a method for solving this problem, a constant voltage diode (Zener diode) ZD having an IV characteristic shown in FIG. 6 is used. In the constant voltage diode ZD, breakdown occurs in the reverse voltage Vb, and the terminal voltage is fixed near Vb. Therefore, if the charging time by radio waves is longer than the breakdown occurs, the initial charge amount Q ₀ = C ₁ · Vb is fixed.

  FIG. 7 is an equivalent circuit representation of a parallel circuit of an equivalent resistance Re and an equivalent capacitance Ce of the rectifier diode D1. If the temperature dependence of the equivalent resistance Re and the equivalent capacitance Ce at the time of reverse bias is small, the decay time constant of the charge Q (t) stored in the first capacitor C1 is always constant. Function. However, if the equivalent resistance Re and the equivalent capacitance Ce are temperature-dependent, the decay time constant depends on the temperature, so that an error occurs in the generation time estimation.

For this reason, in the hysteresis sensor according to the second embodiment, the rectifier diode D1 having a minute structure in which the equivalent resistance Re is large and the equivalent capacitance Ce is small is used, and as shown in FIG. 7, the first capacitor C1 is used. It is inserted the reference resistor R _m in parallel to the. At this time,
R << Re (7)
C1 >> Ce (8)
Then, the time measuring unit 1 has an attenuation time constant τ _s = R _m · C ₁ and plays the role of an accurate clock.
In the nonvolatile memory shown in the cross-sectional view of FIG. 8, a source region 41 and a drain region 42 are formed on the surface of the p-type semiconductor substrate 11, and on a channel region defined between the source region 41 and the drain region 42, A gate insulating film (tunnel oxide film) 33 having a thickness of 5 to 10 nm and electrically conducting by the tunnel effect is disposed. The source region 41 and the drain region 42 are n ⁺ type semiconductor regions in which a p type semiconductor substrate 11 is doped with n type impurities at a high concentration. Instead of the p-type semiconductor substrate 11, a p-type well region (p-well) provided in the n-type semiconductor substrate may be used. On the gate insulating film 33, the floating gate electrode 34 for accumulating charges, the interelectrode insulating film 35 having a thickness of about 10 to 50 nm on the floating gate electrode 34, and the interelectrode insulating film 35 The control gate electrode 36 is arranged to constitute the gate electrode of the nonvolatile memory. A side wall insulating film 37 is formed on the side wall of the laminated structure including the gate insulating film 33, the floating gate electrode 34, the interelectrode insulating film 35, and the control gate electrode 36.

In the nonvolatile memory shown in FIG. 8, when the source region 41 is set to the ground (GND) potential and the switch SW1 is turned on between the source region 41 and the control gate electrode 36 at time t = t ₀ , If the potential difference V1 (t ₀ ) between both ends of one capacitor C ₁ is applied, the amount of charge injected into the floating gate electrode 34 is the charge Q (t ₀ ) held in the first capacitor C _1. ). The potential difference V1 (t ₀ ) across the first capacitor C ₁ may be applied between the source region 41 and the drain region 42. After a certain time (t ₀ <t), the charge accumulated in the floating gate electrode 34 can be measured using the control gate electrode 36. Therefore, although indirectly, at time t = t ₀ , since the charge Q (t ₀ ) held in the first capacitor C ₁ when the switch SW1 is turned on can be known, the estimation of time t ₀ can be performed. It becomes possible.

  According to the history sensor according to the second embodiment of the present invention, as in the history sensor according to the first embodiment, the system can be used to retroactively measure the time when the maximum value such as temperature and mechanical vibration occurs. However, it is possible to provide a history sensor that is excellent in ubiquitous property and suitable for management in transporting and storing various articles.

FIG. 9 shows a case where the second capacitor C ₂ is used instead of the nonvolatile memory 32 in FIG. In the circuit configuration shown in FIG. 9, as in the circuit configuration shown in FIG. 5, when the time when the maximum values such as temperature and mechanical vibration occur are retroactively, the system does not become large-scale and has excellent ubiquitous properties. It is possible to provide a history sensor suitable for management in transportation, storage, etc. of the article.

(Semiconductor integrated circuit)
As shown in FIG. 10, the semiconductor integrated circuit (MEMS chip) according to the embodiment of the present invention becomes a peripheral circuit of the sensor unit 51 together with the sensor unit 51 constituting the history sensor on the semiconductor substrate 11. The control circuit 52, demodulation circuit 53, modulation circuit 54, etc. are monolithically integrated. Furthermore, an internal coil (antenna) 31 connected to the sensor unit 51, the demodulation circuit 53, and the modulation circuit 54 is provided, and external antenna terminals 105 and 106 are connected to the internal coil (antenna) 31. Various circuit configurations shown in FIGS. 5, 7, 9, and the like can be realized by the sensor unit 51 and the internal coil (antenna) 31. Data communication by the control circuit 52, demodulation circuit 53, modulation circuit 54, and the like and power supply to the control circuit 52, demodulation circuit 53, modulation circuit 54, and the like are performed via an external antenna. Although FIG. 10 shows a structure including the internal coil 31, the internal coil 31 is omitted, and the first capacitors are connected to the charging terminals 101 and 102 as in the history sensor according to the first embodiment. A structure in which C ₁ is charged may be used (see FIG. 1).

  A filter, a low-noise amplifier, or the like, not shown, may be integrated in the previous stage of the demodulation circuit 53. Although not shown, an MMIC or the like that constitutes an RF front end unit as a transmission circuit may be integrated between the modulation circuit 54 and the external antenna terminals 105 and 106. The MMIC includes a microwave power transistor.

In the demodulation circuit 53, the frequency of the difference between the RF signal received by the external antenna via the external antenna terminals 105 and 106 and the RF signal output from the local oscillator is extracted, and an IF that is the difference frequency is extracted by an amplifier. The signal is amplified and stabilized. The IF signal is demodulated by, for example, quadrature phase by the demodulation circuit 53, and an I signal and a Q signal that are 90 ° out of phase with each other are generated. In the mixer provided in the demodulating circuit 53, a baseband I signal and a baseband Q signal having a lower frequency, for example, 10 MHz or less, are respectively generated. The baseband I signal and the baseband Q signal are each amplified by an amplifier and then input to the control circuit 52. The baseband I signal and the baseband Q signal input to the control circuit 52 are further converted into digital signals by an AD converter and input to a digital baseband processor (DBBP) built in the control circuit 52. That is, the baseband I signal and the baseband Q signal become a digital baseband I signal and a baseband Q signal, and are subjected to signal processing by DBBP to read the value of the charge Q ₂ (t) of the second capacitor C ₂ . A signal is sent to the sensor unit 51 to control the sensor unit 51.

The modulation circuit 54 includes an amplifier and a mixer connected to the amplifier. The modulation circuit 54 further includes an oscillator and a phase shifter. The RF frequency of the carrier wave from the oscillator is supplied to the mixer with a phase shift of 90 ° from each other by the phase shifter. The value of the charge Q ₂ (t) = Q ₂ (t ₀ + Δt) of the second capacitor C ₂ read by the control circuit 52 from the sensor unit 51 is input to the amplifier of the modulation circuit 54. The amplifier output is mixed and modulated in a mixer with the RF frequency of the carrier from the oscillator. The modulation circuit 54 further comprises an adder and an amplifier connected to the output of the adder. The output of the mixer is input to the adder, and the output of the adder is input to the amplifier. The output of the amplifier at the output stage of the modulation circuit 54 is sent to the external antenna via the external antenna terminals 105 and 106.

  According to the monolithic semiconductor integrated circuit according to the embodiment of the present invention, the system is not large-scaled and excellent in ubiquitous property when transporting the time when the maximum values such as temperature and mechanical vibration occur. In addition, it is possible to provide a semiconductor integrated circuit suitable for management in transportation, storage, and the like of various items such as delivery of frozen and refrigerated goods.

FIG. 11 shows a semiconductor integrated circuit according to a modification of the embodiment of the present invention, which is a hybrid integrated circuit (multichip module) in which a sensor chip 61, a passive circuit chip 62, and a signal processing chip 63 are mounted in a stack. In the sensor chip 61, a MEMS switch as shown in FIG. 3 is integrated. The passive circuit chip 62 includes the first capacitor C ₁ , the second capacitor C ₂ , the nonvolatile memory 32, the charging antenna 31, the reference resistor R _{m, and the} like shown in FIGS. The combination of the chip 61 and the passive circuit chip 62 realizes various circuit configurations shown in FIGS. In the signal processing chip 63, the control circuit 52, the demodulation circuit 53, the modulation circuit 54 and the like shown in FIG. 10 are monolithically integrated. Although configured as a hybrid integrated circuit, the operation of the multichip module according to the modification of the embodiment of the present invention shown in FIG. 11 is substantially the same as that of the monolithic integrated circuit (MEMS chip) shown in FIG. Therefore, duplicate descriptions are omitted.

  According to the hybrid semiconductor integrated circuit according to the embodiment of the present invention, when the time when the maximum value such as temperature and mechanical vibration occurs is retroactively, the system does not become large-scale, has excellent ubiquitous properties, and various articles. It is possible to provide a semiconductor integrated circuit suitable for management in transportation, storage, etc.

(Implementation body)
FIG. 12 shows a mounting body of a semiconductor integrated circuit provided with a history sensor according to an embodiment of the present invention. Although the cross-sectional structure is omitted, the mounting body includes a plastic substrate 91 on which a plurality of components such as a semiconductor integrated circuit (MEMS chip) 64 are mounted, a spacer layer stacked on the plastic substrate 91, and the spacer. The IC tag includes a surface coating layer (skin layer) laminated on the upper side of the layer and the lower side of the plastic substrate 91. FIG. 12 corresponds to a planar perspective view of the IC tag in which the upper surface coating layer and the spacer layer are removed.

As the material of the spacer layer and the surface coating layer, films such as polyethylene, polypropylene, copolymers such as ethylene-vinyl acetate copolymer, copolymers mainly composed of olefins, or mixtures thereof, polyvinyl alcohol, nylon, chloride Further, thermoplastic films such as vinyl, polyester, polyimide, polycarbonate, polystyrene, engineering plastics, etc. are used. Depending on the application, a glass-impregnated epoxy sheet, a metal plate or the like is used. Examples of the method for attaching and fixing the plurality of spacer layers and the surface coating layer include thermal fusion, adhesive (thermoplastic, thermosetting, and photocuring). When affixing the spacer, it is possible to use it by punching it into a part shape such as the MEMS chip 64 in advance.
As the plastic substrate 91, a polyethylene terephthalate (PET) film having a thickness of about 50 to 100 μm can be used, and a MEMS chip 64 having a thickness of about 150 μm to 250 μm and printed antennas 72a, 72b, and 72c having the same thickness are mounted thereon. doing. A PET film having a thickness of about 150 μm to 250 μm with a heat-sensitive adhesive applied to both sides of about 10 to 15 μm is pasted on a plastic substrate 91 as a spacer layer, and the MEMS chip 64 or printed antennas 72a, 72b having the same thickness are attached. The height is the same as 72c. Next, a PET film having a thickness of about 150 μm to 250 μm is applied to the lower surface of the plastic substrate 91, and a heat sensitive adhesive is applied to both sides by about 10 to 15 μm. Further, it can be realized by applying a PET film having a thickness of about 30 to 80 μm to the front and back of the laminate and applying a heat sensitive adhesive to about 10 to 15 μm on one side and sticking it as a surface coating layer.

  According to the IC tag according to the embodiment of the present invention, when the time when the maximum value such as temperature and mechanical vibration occurs is retroactively, the system does not become large-scale, and is excellent in ubiquitous property, transporting refrigeration, It is possible to provide a mounting body on which a semiconductor integrated circuit in which history sensors suitable for management in transportation, storage, and the like of various articles such as home delivery of refrigerated goods are integrated is mounted.

  FIG. 13 is a perspective plan view showing a mounting body (string-like IC tag) in which a semiconductor integrated circuit according to a modification of the embodiment of the present invention is string-mounted. Also in the case of string mounting, similarly to the IC tag, a plastic string 95 on which a plurality of components such as the MEMS chip 64 in which the history sensors described in the first and second embodiments are integrated, and the plastic string 95 are mounted. A spacer layer is formed on the spacer layer, and a surface covering layer is formed on the upper side of the spacer layer and the lower side of the plastic cord 95. FIG. 13 corresponds to a plan perspective view of the IC tag shown in FIG. 12 with the upper surface coating layer and the spacer layer removed.

  As the plastic string 95, a PET string having a thickness of about 50 to 100 μm can be used, and a MEMS chip 64 having a thickness of about 150 to 250 μm and a printed antenna 72d having the same thickness are mounted thereon. A PET string having a thickness of about 150 μm to 250 μm with a heat-sensitive adhesive applied to both sides of about 10 to 15 μm is affixed to the plastic string 95 as a spacer layer, and is the same height as the MEMS chip 64 or the printed antenna 72d having the same thickness. Say it. Next, a PET string having a thickness of about 150 μm to 250 μm is applied to the lower surface of the plastic string 95, and a heat sensitive adhesive is applied to both sides by about 10 to 15 μm. Furthermore, a PET string having a thickness of about 30 to 80 μm is applied to the front and back of the laminate, and a heat-sensitive adhesive is applied to about 10 to 15 μm on one side, and a surface coating layer is applied to realize a string-like IC tag.

  According to the string-like IC tag according to the embodiment of the present invention, when the time when the maximum value such as temperature and mechanical vibration occurs is retroactively, the system does not become large-scale, has excellent ubiquitous property, and transports crap. In addition, it is possible to provide a mounting body on which a semiconductor integrated circuit in which history sensors suitable for management in transportation, storage, and the like of various articles such as delivery of frozen refrigerated goods are integrated is mounted.

(History retroactive system)
As shown in FIG. 14, the history retrospective system according to the embodiment of the present invention includes a MEMS chip 64 in which the history sensors described in the first and second embodiments are integrated, and an external attachment of the MEMS chip 64. A reader / writer device 71 that performs data communication and power supply via an antenna 56a and an external antenna 56b, and a display device / input device 81 connected to the reader / writer device 71 are provided. Since the MEMS chip 64 has already been described with reference to FIG. 10, duplicate description is omitted.

  On the other hand, the reader / writer device 71 used in the history retroactive system shown in FIG. 14 has a modulation circuit 72, a demodulation circuit 73, a control circuit 74, an oscillation circuit 75, a power supply circuit 76, etc. integrated monolithically on a semiconductor substrate. A filter, a low-noise amplifier, etc., not shown in the figure, may be integrated in the previous stage of the demodulation circuit 73. Although not shown, an MMIC or the like constituting an RF front end unit as a transmission circuit may be integrated between the modulation circuit 72 and the external antenna 56b. The MMIC includes a microwave power transistor.

In the demodulation circuit 73, the frequency of the difference between the RF signal from the MEMS chip 64 received by the external antenna 56b and the RF signal output from the oscillation circuit 75 is extracted, and the IF signal as the difference frequency is amplified by the amplifier. And stabilized. The IF signal is demodulated by, for example, quadrature phase by the demodulation circuit 73, and an I signal and a Q signal that are 90 ° out of phase with each other are generated. In the mixer provided in the demodulation circuit 73, a baseband I signal and a baseband Q signal of lower frequency, for example, 10 MHz or less, are generated. The baseband I signal and the baseband Q signal are each amplified by an amplifier and then input to the control circuit 74. The baseband I signal and the baseband Q signal input to the control circuit 74 are further converted into digital signals by an A / D converter and input to a digital baseband processor (DBBP) built in the control circuit 74. That is, the baseband I signal and the baseband Q signal become a digital baseband I signal and a baseband Q signal, and are processed by DBBP. Specifically, the DBBP has a charge amount Q ₁ (t ₀ ) (C ₂ / (C ₁ + C ₂ )) of the second capacitor C ₂ at time t = t ₀ + Δt expressed by the equation (3), and attenuation. Using the time constant τ _s = R _m · C ₁ , the time t ₀ when the maximum temperature / vibration occurs is obtained. The control circuit 74 sends processing results such as time t ₀ obtained by the calculation of DBBP to the display device 81, and further controls the display device 81 to display the processing results.

  The modulation circuit 72 includes an amplifier and a mixer connected to the amplifier. The modulation circuit 72 further includes a phase shifter. The RF frequency of the carrier wave from the oscillation circuit 75 is supplied to the mixer with the phase shifted by 90 ° from each other. The control circuit 74 converts commands, conditions, and the like input from the input device 81 into analog signals and inputs the analog signals to the amplifier of the modulation circuit 72. Inside the modulation circuit 72, the output of the amplifier and the RF frequency of the carrier wave from the oscillation circuit 75 are mixed and modulated in the mixer. The modulation circuit 72 further comprises an adder and an amplifier connected to the output of the adder. The output of the mixer is input to the adder, and the output of the adder is input to the amplifier. The output of the amplifier at the output stage of the modulation circuit 72 is sent to the external antenna 56b via the external antenna 56b, and is sent from the external antenna 56b to the external antenna 56a of the MEMS chip 64.

  The history retrospective system according to the embodiment of the present invention can identify the time when a temperature or vibration more than a certain level has occurred retroactively in the following procedure.

(A) The reader / writer device 71 shown in FIG. 14 charges the first capacitor C ₁ of the MEMS chip 64 with radio waves via the external antennas 56a and 56b. Alternatively, the electrical terminal of the reader / writer device 71 and the electrical terminal of the MEMS chip 64 may be brought into contact with each other and charged with the reference power source of the reader / writer device 71.

(B) When the first capacitor C ₁ of the MEMS chip 64 is charged to the initial charge Q ₀ , the measurement is started. Then, the charge of the second capacitor C ₂ of the MEMS chip 64 or the charge accumulated in the floating gate electrode 34 of the nonvolatile memory 32 is read by the reader / writer device 71 after a certain time.

(C) When the charge of the second capacitor C ₂ is no information to zero or non-volatile memory 32, it is determined that there is no problem to the maximum temperature / vibration. If not, the control circuit 74 determines the charge amount Q ₁ (t ₀ ) (C ₂ / (C ₁ + C ₂ )) of the second capacitor C ₂ and the decay time constant τ _s = R _m · The time t ₀ when the maximum temperature / vibration occurs is obtained using C ₁ .

(D) When the time t ₀ when the maximum temperature / vibration occurs is obtained, the first capacitor C ₁ of the MEMS chip 64 is charged to the initial charge Q ₀ again using the reader / writer device 71 shown in FIG. .

According to the history retrospective system according to the embodiment of the present invention, when retroactively the time when the maximum value such as temperature, mechanical vibration, etc. occurs, the system does not become large-scale, and is excellent in ubiquitous property, transportation of waste, It is possible to provide a history retrospective system suitable for management in transporting, storing, and the like of various items such as delivery of frozen and refrigerated items.
(Other embodiments)
As described above, the present invention has been described according to the first and second embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

In the history sensor according to the first and second embodiments already described, the single vibration / temperature switch SW1 is formed on the semiconductor substrate 11, but a large number of switches SW1 having different thresholds to be turned on are formed. This enables more precise retrospective measurement. That is, for example, (a) a first timekeeping unit 1 that uses a decay characteristic of charge that decays with a constant decay time constant τ _s as a clock, and a first charge storage unit 2 that stores charge information at a specific time in the decay characteristic. And a first switch SW1 that conducts transiently at a temperature or vibration equal to or higher than a first level (threshold value), enters a shut-off state again, and distributes charges from the first time measuring unit 1 to the first charge storage unit 2 by conduction. A first sensor unit; and (b) a second timing unit 1 that uses a decay characteristic of the charge that decays with the decay time constant τ _s as a clock, and a second charge storage unit 2 that stores charge information at a specific time in the decay characteristic. , When the temperature or vibration of the second level (threshold) is different from the first level (threshold) or higher, the continuity is established and the circuit is turned off again, and the electric charge is transferred from the second timing unit 1 to the second charge storage unit 2. A second switch SW1 for distributing A second sensor unit, (c) the decay time third time measuring unit 1 the attenuation characteristic of the charge decay constant tau _s and clock, a third charge storage unit 2 for storing charge information at a particular time in the attenuation characteristic, When the temperature or vibration exceeds a third level (threshold) that is different from the first and second levels (threshold), the continuity is established, and the circuit is turned off again. A third sensor unit that includes a third switch SW1 that distributes charges to each other, and a plurality of sensor units, such as (d)..., Each of which is a charge storage unit. 2 to integrate the peripheral circuits on the same semiconductor substrate so as to read out the charge information, respectively, and identify the time t ₀ when the transient conduction is made by the charge information and the decay time constant τ _s Configure multiple thresholds according to the level. Detecting Te, thereby enabling more precise retrospective measurements.

 Further, a crack monitoring target such as a concrete or road of a building is embedded in a MEMS chip having a circuit configuration having a charging antenna 31 as shown in FIG. The degree of deterioration of an object can be determined.

That is, in the determination of the degree of degradation of the crack monitor object, the voltage at the time measuring unit measuring terminal 107 of the MEMS chip having the circuit configuration shown in FIG. 15 is measured after a certain time. If a state in which the vibration or temperature exceeds a normal level occurs at a specific time t = t ₂ , as described in the first and second embodiments, the charge is transferred at this time t = t 2. At t ₂ , the second capacitor C ₂ is moved. For this reason, as shown in FIG. 16, in the measurement at the time t = t ₃ (t ₂ <t ₃ ), it is observed that the change of the curve C having a potential smaller than the normal curve B is shown. . On the other hand, in the measurement at time t = t ₃ , the charging antenna 31 is disconnected if the voltage at the time measuring unit 107 changes like the curve A exceeding the level of the normal curve B ( That is, it can be determined that the concrete has cracked.

This is because if the charging antenna 31 is disconnected at the time t = t ₁ (t ₁ <t ₂ ), the current flowing through the resistance of the rectifier diode D1 disappears at t ₁ <t. . Of course, the situation becomes complicated when the charging antenna 31 is turned off and the temperature / switch SW1 is turned on within a certain time, but in this case, it can be determined by measuring the voltage at the charge storage unit measurement terminal 108. The above description is configured such that the voltage information of the time measuring unit measurement terminal 107 and the charge storage unit measurement terminal 108 can be transmitted by the charging antenna 31 of a different system different from that for monitoring the crack.

  The crack monitoring system according to another embodiment of the present invention can monitor whether or not a crack has occurred by the following procedure.

(A) First, a plurality of MEMS chips having the same structure and the same characteristics are embedded in a crack monitoring object such as concrete or road of a building at a constant interval or a predetermined monitor point. Then, with the same reader / writer device as shown in FIG. 14, the first capacitors C ₁ of the respective MEMS chips are simultaneously charged with radio waves.

(B) After a certain time, the charge of the second capacitor C ₂ of each MEMS chip or the charge accumulated in the floating gate electrode 34 of the nonvolatile memory 32 is read out by a reader / writer device via radio waves.

(C) if the second charge capacity C ₂ is no information to zero or nonvolatile memory 32, if there is a problem with the maximum temperature / vibration, whether either crack during the crack monitor object has occurred It is determined. In this case, the charge Q ₁ (t) of the first capacitor C ₁ is also read, and the values read from each of the plurality of MEMS chips are compared with each other. If the charge Q ₁ (t) of the first capacitor C ₁ read from a specific MEMS chip is larger than the charge Q ₁ (t) of the first capacitor C ₁ read from another MEMS chip. Then, it is determined that a crack has occurred at a location where the specific MEMS chip is embedded.

Note that a reference MEMS chip having the same structure and characteristics as the MEMS chip embedded in the crack monitoring object is built in the reader / writer device side, and the charge Q ₁ (t of the first capacitor C ₁ read from the reference MEMS chip is read. ) And the value of the charge Q ₁ (t) of the first capacitor C ₁ read from the MEMS chip embedded in the crack monitoring object may be compared.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

It is a figure which shows the circuit structure of the history sensor which concerns on the 1st Embodiment of this invention. It is a diagram illustrating a change in charge Q ₁ (t) of the first capacitance C ₁ of the history sensor shown in FIG. It is typical sectional drawing explaining the MEMS switch of the log | history sensor shown in FIG. FIG. 4 is a schematic bird's-eye view for explaining a history sensor in which the MEMS switch shown in FIG. 3 is integrated. It is a figure which shows the circuit structure of the log | history sensor which concerns on the 2nd Embodiment of this invention. It is a figure which shows the IV characteristic of the constant voltage diode used for the log | history sensor shown in FIG. It is a figure which shows the circuit structure of the log | history sensor which concerns on the modification of the 2nd Embodiment of this invention. It is typical sectional drawing which shows the structure of the non-volatile memory used for the log | history sensor shown in FIG. It is a figure which shows the circuit structure of the log | history sensor which concerns on the other modification of the 2nd Embodiment of this invention. 6 is a schematic bird's-eye view for explaining a semiconductor integrated circuit (MEMS chip) monolithically integrated with a history sensor shown in FIG. 5 up to a peripheral circuit. FIG. It is a typical bird's-eye view explaining the multichip module (semiconductor integrated circuit) which integrated the history sensor and peripheral circuit which concern on the 1st or 2nd embodiment of this invention in the hybrid. It is a permeation | transmission top view of the IC tag which mounted the MEMS chip based on embodiment of this invention. It is a typical permeation | transmission top view which shows the structure of the string-like IC tag which carried out the string mounting of the MEMS chip which concerns on embodiment of this invention. It is a block diagram explaining the history retroactive system concerning an embodiment of the invention. It is a figure which shows the circuit structure of the crack monitor which concerns on other embodiment of this invention. FIG. 16 is a diagram for explaining a change in charge Q ₁ (t) of the first capacitor C ₁ of the crack monitor shown in FIG. 15.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Time measuring part 2 ... Charge memory | storage part 3 ... Initial charge setting part 11 ... Semiconductor substrate 12 ... 1st electrode wiring 13 ... 2nd electrode wiring 14 ... Ground wiring 15 ... Elastic beam 17 ... Bimetal beam 21 ... 1st metal layer 22 ... second metal layer 31 ... antenna 31 ... charging antenna (internal coil)
32 ... Nonvolatile memory 33 ... Gate insulating film 34 ... Floating gate electrode 35 ... Interelectrode insulating film 36 ... Control gate electrode 37 ... Side wall insulating film 41 ... Source region 42 ... Drain region 51 ... Sensor unit 52 ... Control circuit 53 ... Demodulation Circuit 54 ... Modulation circuit 56a, 56b ... Antenna 61 ... Sensor chip 62 ... Passive circuit chip 63 ... Signal processing chip 64 ... MEMS chip 71 ... Reader / writer device 72 ... Modulation circuit 72a, 72b, 72c, 74d ... Print antenna 73 ... Demodulation Circuit 74 ... Control circuit 75 ... Oscillator circuit 76 ... Power supply circuit 81 ... Display / input device 101,102 ... Charging terminal 105,106 ... Antenna terminal 107 ... Timer measuring terminal 108 ... Charge memory measuring terminal

Claims (10)

A timekeeping unit that keeps time by the decay characteristics of charges that decay with a constant decay time constant;
A switch that is transiently turned on at a temperature or vibration above a certain level, and then shuts off again;
A history sensor comprising: a charge storage unit that distributes charges from the timekeeping unit when the switch is turned on; and identifying the time when the transient conduction is performed by the charge attenuation characteristics. The timekeeping section is
A timer capacitor;
The history sensor according to claim 1, further comprising: a reference resistor connected in parallel to the timer capacitor.   The history sensor according to claim 2, wherein the timing unit further includes an initial charge setting unit configured to charge the timing unit capacitor to an initial charge. The initial charge setting unit includes:
4. A series circuit comprising an antenna and a rectifier diode that rectifies a current induced by electromagnetic energy received by the antenna, wherein the series circuit is connected in parallel to the timer capacitor. The described history sensor.   The history sensor according to claim 1, wherein the timing unit, the charge storage unit, and the switch are integrated on the same semiconductor substrate. A timekeeping unit that keeps time by the decay characteristics of charges that decay with a constant decay time constant;
A switch that is transiently turned on at a temperature or vibration above a certain level, and then shuts off again;
A charge storage unit in which charges are distributed from the timing unit by conduction of the switch;
A peripheral circuit for reading out the charge accumulated in the charge storage unit from the charge storage unit is integrated on the same semiconductor substrate, and the time when the transient conduction is performed is identified by the attenuation characteristic of the charge. A semiconductor integrated circuit. The timekeeping section is
An initial charge setting unit comprising an antenna and a rectifier diode that rectifies a current induced by electromagnetic energy received by the antenna, wherein the initial charge setting unit uses the time-unit capacitor included in the time-measurement unit as an initial charge. The semiconductor integrated circuit according to claim 6, wherein charging is performed. A first timekeeping section that counts by a charge decay characteristic that decays with a constant decay time constant; a first switch that is transiently turned on at a temperature or vibration above a certain level; and is turned off again; A first sensor unit comprising a first charge storage unit to which charge is distributed from the time measuring unit;
A second timekeeping unit that counts by the attenuation characteristic of the charge that is attenuated by the decay time constant; a second switch that is transiently turned on at a temperature or vibration different from the predetermined level; A second sensor unit to which electric charge is distributed from the second time measuring unit;
Peripheral circuits for reading out charges accumulated in the first and second charge storage units from the first and second charge storage units, respectively, are integrated on the same semiconductor substrate, and the transient characteristics are applied to the transient circuit. A semiconductor integrated circuit characterized by identifying the time when electrical conduction was made.   8. The semiconductor substrate according to claim 6, further comprising a terminal on the semiconductor substrate for supplying power to the semiconductor integrated circuit and connecting an external antenna for performing data communication with the peripheral circuit. A semiconductor integrated circuit according to 1. A plastic substrate,
Mounted on the plastic substrate, timed by a charge decay characteristic that decays with a constant decay time constant, a switch that becomes transiently conductive at a temperature or vibration above a certain level, and becomes a shut-off state again. A semiconductor integrated circuit in which a charge storage unit to which charges are distributed from the time measuring unit, and a peripheral circuit for reading out charges accumulated in the charge storage unit from the charge storage unit are integrated on the same semiconductor substrate;
An antenna mounted on the plastic substrate, supplying power to the semiconductor integrated circuit and performing data communication with the peripheral circuit, and identifying the time when the transient conduction has occurred by the decay time constant A mounting body characterized by that.

Images