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JP2005295095A - イメージセンサ - Google Patents

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Publication number
JP2005295095A
JP2005295095A JP2004105681A JP2004105681A JP2005295095A JP 2005295095 A JP2005295095 A JP 2005295095A JP 2004105681 A JP2004105681 A JP 2004105681A JP 2004105681 A JP2004105681 A JP 2004105681A JP 2005295095 A JP2005295095 A JP 2005295095A
Authority
JP
Japan
Prior art keywords
image sensor
light
image
lens
sensor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004105681A
Other languages
English (en)
Other versions
JP3829853B2 (ja
Inventor
Takafumi Endo
孝文 遠藤
Yohei Nogami
陽平 野上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004105681A priority Critical patent/JP3829853B2/ja
Priority to US10/933,224 priority patent/US6969838B2/en
Priority to CNB2004100856174A priority patent/CN100466679C/zh
Priority to IT002236A priority patent/ITMI20042236A1/it
Priority to DE102004058239A priority patent/DE102004058239A1/de
Publication of JP2005295095A publication Critical patent/JP2005295095A/ja
Application granted granted Critical
Publication of JP3829853B2 publication Critical patent/JP3829853B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S1/00—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
    • G01S1/02—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith using radio waves
    • G01S1/022—Means for monitoring or calibrating
    • G01S1/026—Means for monitoring or calibrating of associated receivers
    • G—PHYSICS
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    • G01S5/00—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations
    • G01S5/02—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations using radio waves
    • G01S5/0205—Details
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    • G01S5/00—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations
    • G01S5/02—Position-fixing by co-ordinating two or more direction or position line determinations; Position-fixing by co-ordinating two or more distance determinations using radio waves
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    • G11B20/10425—Improvement or modification of read or write signals signal quality assessment jitter, timing deviations or phase and frequency errors by counting out-of-lock events of a PLL
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    • H03—ELECTRONIC CIRCUITRY
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    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/091—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector using a sampling device
    • H—ELECTRICITY
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Abstract

【課題】 補間データ（仮想撮像素子のデータ）を用いることなく、且つ境界撮像素子間隔が撮像素子間隔よりも大きい場合であっても境界領域の画像を忠実に読み取ること。
【解決手段】 この発明に係るイメージセンサは、レンズにより集束された反射光を受光する複数の撮像素子を直線的に配設した多数の半導体チップを搭載するセンサ基板と、前記レンズとセンサ基板間に介在し、隣接する半導体チップの境界領域に相当する光路領域に屈折機能を持たせた透過体とにより前記センサ基板に搭載された前記半導体チップの境界領域に相当する光路領域に入射する反射光を隣接する前記半導体チップの撮像素子のそれぞれに振り分ける。
【選択図】 図２

Description

この発明は画像入力装置に使用されるイメージセンサに関するものであり、特に光電変換素子として複数の半導体チップを搭載した密着型イメージセンサに関する。
イメージセンサの構成の１つとして、特許文献１の図９には複数のチップを配列し、チップ間（チップの境界）におけるピッチ誤差による濃度差を目立ち難くした画像読取装置が開示されている。図中、Ｃ１及びＣ２はチップ（光電変換素子）、Ｃａ及びＣｂは隣接するチップ端部、Ｌａは隣接するチップ端部隙間の距離である。また、ｒは撮像素子（受光素子）、Ｐは撮像素子間隔、Ｐ’は境界撮像素子間隔である。また、同公報図３（ｃ）においてＣ１４及びＣ２１はお互いに隣接したチップ境界に位置する撮像素子である。
また、特許文献２の図４には複数の光学素子チップを配列した読み取り装置が開示されている。図中、１は光学素子チップ、２は素子（受光素子）、３は長手方向（傾斜）端面、３ａはチップ１の表面側の縁、３ｂはチップ１の裏面側（基板側）の縁、７は基板、８は銀ペーストである。
特開２００３−１０１７２４号公報 特開平６−２１８９８５号公報
複数のチップを基板上に配列したイメージセンサでは、特許文献１では撮像素子間隔Ｐに対して、境界撮像素子間隔Ｐ’は長くなるため、撮像素子Ｃ１４の出力と撮像素子Ｃ２１の出力との平均値を補間データとして追加するため本来の画像データを読み込んだものではないため模擬（疑似）データを作成したことにとなる。
また、特許文献２では、回転ブレードの剛性を高め、回転ブレードを傾斜させながらダイシングを行い、チップ１の表面側の縁３ａを突出させ、裏面側の縁３ｂを退避させるようにしたので、境界撮像素子間隔Ｐ’を本来の撮像素子間隔Ｐに近づけることが可能である。
しかしながらダイボンダなどによる自動実装時においては、実装精度に起因するチップ同士の衝突（接触）を考慮するためチップ間をあらかじめ隔離して実装する必要がある。また精度良く実装できても下部に位置する銀ペースト８などの接着剤の上に機械実装するため、実装後の位置変化がある。
さらに、接着時には熱硬化（Ｃｕｒｅ）させてチップを固定するため、Ｃｕｒｅ時の接着剤の収縮によるチップのランダムな移動による位置変化を無視できないため、多数のチップ配列では結局、精度良く実装できないと言う問題があった。
この発明のイメージセンサは上記のような問題点を解消するものであり、補間データ（仮想撮像素子のデータ）を用いることなく、且つ境界撮像素子間隔Ｐ’が撮像素子間隔Ｐよりも大きい場合であっても境界領域の画像を忠実に読み取ることが可能なイメージセンサを提供することを目的とする。
この発明に係るイメージセンサは、被写体に光を照射する光源と、前記被写体の移動方向と直角方向に延在し所定の読み取り幅に渡り前記被写体からの反射光を集束するレンズと、このレンズにより集束された反射光を受光する複数の撮像素子を直線的に配設した多数の半導体チップを搭載したセンサ基板と、前記レンズとセンサ基板との間に介在し、お互いに隣接する前記半導体チップの隙間近傍に設けられた切欠き部若しくは突出部を有する透過体と、少なくとも前記レンズとセンサ基板と透過体とを収納又は保持する筐体とを備え、前記センサ基板に搭載された前記半導体チップの境界領域に相当する光路領域に入射する反射光を隣接する前記半導体チップの撮像素子のそれぞれに振り分けることを特徴とする。
この発明に係るイメージセンサは、被写体に光を照射する光源と、被写体の移動方向と直角方向に延在する所定の読み取り幅に渡り、被写体からの反射光の光路上に設けられ、反射光を集束するレンズと、このレンズにより集束された反射光を受光する複数の撮像素子を直線的に配設した多数の半導体チップを搭載するセンサ基板と、前記レンズとセンサ基板間に介在し、隣接する半導体チップの境界領域に相当する光路領域に屈折機能を持たせた透過体と、少なくとも前記レンズ、センサ基板及び透過体を収納する筐体とを備え、前記センサ基板に搭載された前記半導体チップの境界領域に相当する光路領域に入射する反射光を隣接する前記半導体チップの撮像素子のそれぞれに振り分けるようにしたので
補間データ（仮想撮像素子のデータ）を用いることなく、且つ境界撮像素子間隔が撮像素子間隔よりも大きい場合であっても境界領域の画像を忠実に読み取ることが可能である。
実施例１．
以下、この発明の実施例１について説明する。図１はこの発明のイメージセンサの断面構成図である。図１において、１は被写体（原稿、紙幣、小切手、有価証券など）を照射する光源、２は被写体１の走行面を確保、もしくはイメージセンサを保護密閉するガラス板、３は被写体１である原稿、４は原稿３で反射された光を集光するレンズ（ロッドレンズアレイ）、５は反射光を通過させる透過板、６は撮像素子やその駆動回路で構成された半導体チップ、７は半導体チップ６を搭載するセンサ基板、８は入出力信号の受け渡しを行うコネクタ。９はロッドレンズアレイや透過板及びセンサ基板を収納又は保持する筐体、１０は原稿３を駆動させる駆動プラテンであり、通常イメージセンサには搭載されない。
次に動作について説明する。図１において、光源１からの光はガラス板２を介して原稿３を照射する。原稿３で反射された散乱光の一部は反射光となり、ガラス板２を介してロッドレンズアレイ４で集束される。ロッドレンズアレイ４で集束された反射光は透過板５を通過してセンサ基板７上の半導体チップ６の撮像素子（受光素子）に入射する。
原稿面と半導体チップ上面に設置された撮像素子間の距離を光路長と呼び、この光路に沿って反射した散乱光の一部は反射光として半導体チップ６で受光される。ロッドレンズアレイ４、透過板５、及び半導体チップ６の撮像素子部分は光路軸に対してセンタ振り分けで配置されている。
図２はロッドレンズアレイ４と透過板５及びセンサ基板７上の半導体チップ６との位置関係と形状を長手方向（原稿読み取り方向）に渡って表示した外観（鳥瞰）図である。なお、１１は半導体チップ６上に形成された撮像素子を示す。図３は透過板５の下面に形成された切欠き部を示したものであり、この切欠き部のピッチ（Ａ）は半導体チップ６の搭載ピッチと一致している。図４はセンサ基板７上に隣接する半導体チップ６の位置関係を示したものであり、Ｐは撮像素子間隔、Ｐ’は境界撮像素子間隔、Ｓは撮像素子１１の受光領域サイズであり、方形又は矩形である。Ｌｇａｐは隣接する半導体チップ間隔（半導体チップ６の隙間）である。なお、１１ｅは半導体チップ６の両端部に位置する撮像素子（境界撮像素子）を示す。
図５は透過板５下面の切欠き形状を示す平面図であり、透過板５長手方向に渡り、被写体１の移動方向側の一方が円弧状のＡ部と矩形上のＢ部で構成された面、被写体１の移動方向側の他方が矩形状のＣ部と円弧状のＤ部で構成された面領域からなる。図６は図５のＡ部Ｂ部領域断面形状及びＣ部Ｄ部領域断面形状を示したものである。図７は透過板５の切欠き形状領域の外観（鳥瞰）図である。
一般に媒質Ａから媒質Ｂに入射する光は媒質Ａの屈折率が大きい場合は図８に示すように紙面における入射垂直光に対してその屈折光は媒質Ａと媒質Ｂとの境界で屈折して曲げられる。紙面に対して媒質Ａ（屈折率ｎ＝１．５）と媒質Ｂ（屈折率ｎ＝１．０）との境界部が右上がりであれば、屈折光は入射光に対して左方向に曲げられ、媒質Ａと媒質Ｂとの境界部が右下がりであれば、屈折光は入射光に対して右方向に曲げられる。図９は図８で示した媒質Ａと媒質Ｂの境界部を紙面前面と紙面背面に重ね合わせた図である。この場合、入射する垂直光に対してその屈折光は前面部分光と背面部分光として現れる。
図１０は図５及び図６で示した前面、背面屈折面における屈折光をセンサ基板７上の光の方向として示した模式図である。この場合、半導体チップ６の境界領域に入射する垂直光は境界に位置する撮像素子（境界撮像素子）１１ｅ方向に振り分けられ入射する。
図１１は半導体チップ６の境界領域に入射する垂直光に対応する透過板５の領域の具体的サイズを示したものである。本実施例では透明プラスチック材にアクリル樹脂を用い、幅０．２ｍｍ、高さ０．０３ｍｍの切欠き領域としてその領域を局面加工及び切削を施した透過板５示している。なお、透過板５は透明ソーダガラス材を用いて研削加工しても良い。
図１２は図１１に示す切欠き部を設けた透過版５を３００ＤＰＩの読み取り密度を持つイメージセンサに組込み画像の再現性を試験したデータである。試験は赤、青、緑を３００ＤＰＩの密度で印刷されたストライプパターンを用いて半導体チップ６境界部領域に相当する画像の再現性を判定した。画像の精度は半導体チップ６の実装位置によるチップ間間隔（Ｌｇａｐ）によるパラメータと透過版５下面と撮像素子１１間の距離（Δｈ）によるパラメータで変化するのでこれらを考慮して測定及び判定を行った。図１２ではＬｇａｐが０．２ｍｍあってもΔｈを変更することで良好な画質を確保できることがわかる。
実施例２．
図１３は、透過板５の形状を実施例１で説明した図７に示すような切欠き形状に代えて突出形状にしたものである。この透過板５１の突出形状について、図８と対比して説明する。図１４において媒質Ａと媒質Ｂとの境界部が右下がりあれば、屈折光は入射光に対して右方向に曲げられ、媒質Ａと媒質Ｂとの境界部が右上がりであれば、屈折光は入射光に対して左方向に曲げられる。図１５は図１４で示した媒質Ａと媒質Ｂの境界部を紙面前面と紙面背面に重ね合わせた図である。この場合、入射する垂直光に対してその屈折光は右曲がり光が前面部分光となり。左曲がり光が背面部分光となる。これは実施例１で示した部分光の方向がお互いに逆方向となっているだけである。すなわち、半導体チップ６境界領域に切欠き形状の透過版５を用いても突出形状の透過版５１を用いても配光は同一である。
実施例３.
図１６はこの発明の実施例１の図７で示したイメージセンサの透過板５の不連続領域に遮光を施した図である。実施例１及び実施例２では主として半導体チップ６の境界領域の垂直光に言及して述べたが、垂直光より僅かに傾斜を持った原稿３からの反射有効光があり、透過板５の厚み（２ｍｍ）に対して高さ（ｈ）方向０．０３ｍｍの切欠き部があると有効光の一部は全反射し、他の撮像素子１１に入射するため、読み取り画像の鮮明度が低下する。この現象を防止するために光路軸との平行面にある不連続領域でもある段差部、傾斜部に遮光塗料３０として市販のソルダーレジスト用の黒色インクを使用し適宜乾燥し塗布した遮光塗料３０を固化させる。
実施例４
図１７はこの発明の実施例２の図１３で示したイメージセンサの透過板５１の不連続領域に遮光を施した図である。垂直光より僅かに傾斜を持った原稿３からの反射有効光があり、透過板の厚み（２ｍｍ）に対して高さ（ｈ）方向０．０３ｍｍの突出部があると有効光の一部は全反射し、他の撮像素子１１に入射するため、読み取り画像の鮮明度が低下する。この現象を防止するために光路軸との平行面にある不連続領域でもある段差部、傾斜部に遮光塗料３０として実施例３と同様に市販のソルダーレジスト用黒色インクを使用する。
実施例５
図１８はこの発明の実施例１で示した３００ＤＰＩの密度を持つイメージセンサに代えて６００ＤＰＩの密度のイメージセンサに組込み、透過板は図１１に示す切欠き部を施した透過板５を設置して、画像の再現性を試験したデータである。試験は実施例１同様に赤、青、緑を３００ＤＰＩの密度で印刷されたストライプパターンを用いて半導体チップ境界部の画像の再現性を判定した。図１８ではＬｇａｐが０．１ｍｍまではΔｈを最適値に設定することで良好な画質を確保できることがわかる。なお、本実施例では切欠き部で構成された透過板５について説明したが、切切欠き部に代えて突出部で構成された透過板５１を用いても同様な試験結果となる。
また、透過板５の切欠き部もしくは透過板５１の突出部の不連続領域に遮光塗料３０を用いた場合には、原稿からの垂直光に対する受光がほぼ主体となるので６００ＤＰＩのイメージセンサでは鮮明度に加えて画質のきれ（画像境界部の濃度差）がさらに改善される。
実施例６.
図１９はこの発明の実施例１乃至５で示したイメージセンサの筐体９の光路軸に組み込まれる（載置する）透過板５又は透過板５１の位置を窪み部９１ａを設けて段階的に変更できるようにした筐体９１を使用したイメージセンサの断面図を示したものである。イメージセンサに搭載する半導体チップ６は、３００ＤＰＩの密度であっても６００ＤＰＩの密度であっても個々の半導体チップ６の読み取り方向サイズは略１２．８ｍｍ弱であり、1個の半導体チップ６は３００ＤＰＩの場合は１４４個の撮像素子（撮像素子間隔は約０.０８４ｍｍ）６００ＤＰＩでは２８８個の撮像素子（撮像素子間隔は約０．０４２ｍｍ）であるため密度が異なっても隣接する半導体チップ６の隙間（間隔）は実装時における製造過程では同一である。
従って、本実施例では６００ＤＰＩのセンサ基板７と３００ＤＰＩのセンサ基板７とは同一形状であり、実装位置も同じであるが、光路軸に挿入する透過板の位置は変更する必要が生じるため、透過板は幅方向のサイズを変更し、段階的に窪み部（９１ａ）を設けた筐体９１に挿入することにより３００ＤＰＩ用のセンサ基板７であっても６００ＤＰＩ用のセンサ基板７であっても容易に組込みができるので筐体を共通化でき、高精度の読み取り品質も確保できる効果がある。
また筐体９１の窪み部９１ａに代えて、透過板に入射する反射光の入射領域外に読み取り方向に沿って直径略０．２ｍｍφ程度で６００ＤＰＩ密度と３００ＤＰＩ密度の仕様のイメージセンサでは長さが異なる突起を透過板に複数個設け、且つ筐体９の所定位置にそれらの嵌合穴を設けておくことによっても同様な効果を奏する。すなわち、図２０に示すように透過板５２の突起部の長さが短い６００ＤＰＩ用と突起部の長さが少し長い３００ＤＰＩ用とを使い分けることにより、透過板５２とセンサ基板７との距離変更ができる。なお、窪み部９１ａを設けた筐体９１などでは接着剤で透過体と筐体９とが固定されるが、透過板に突起を設けた透過板５２ではパッチン嵌合で筐体９と固定される。
なお、本実施例ではイメージセンサの分解能の仕様が異なる場合について透過板とセンサ基板間との距離変更を行う手段を述べたが、これに限らずカラーイメージセンサでは赤（ＲＥＤ）、緑（ＧＲＥＥＮ）、青（ＢＬＵＥ）以外にも紙幣判別などの用途では赤外線光源や紫外線光源を搭載したイメージセンサが重用されるため、各々の光の波長が異なることから生じるイメージセンサの共役長の調整のために使用しても良い。
実施例７．
実施例１乃至６では、透過体の切欠き部若しくは突出部は原稿の移動方向と平行な面に２箇所分散させて切欠き部同士若しくは突出部同士を設置したがさらに細かく分散領域を設けても同様な効果が得られる。すなわち、図２１に示すように切欠き部と突出部を組合せた透過板５３とでは光は１方向に集中して放射するので、切欠き部と突出部の配置位置を半導体チップ６間隔の一方の半導体チップ６境界近傍領域に設置することで他方の半導体チップ６の境界撮像素子１１ｅに集中させることができる。
また、この発明の実施例１乃至７では透過板は撮像像素子間隔（Ｌｇａｐ）の撮像素子１１平面近傍に相当する透過板下面に切欠き部や突出部を設置したが、透過板の厚みが薄い場合には透過板上面に切欠き部や突出部を設けても撮像素子１１近傍に設置できるので相応の効果がある。
また、この発明の１乃至７で示すイメージセンサでは透過板は成形一体構造としたが、透過板を薄くしてＬｇａｐ近傍のみに分散設置しても良い。
この発明の実施例１乃至７で示すイメージセンサでは透過体として、屈折率（ｎ）が略１．５のプラスチック材やソーダガラス材を使用したが屈折光を急峻とし、より遠方からの屈折光を所望の境界撮像素子１１ｅ側へ放射する場合にはｎ＝２．０程度の透明クリスタルや石英を用いても相応の効果がある。
以上から実施例１乃至７で示すイメージセンサでは、隣接する半導体チップ間に大きな隙間があり、その領域に撮像素子１１が無く（仮想撮像素子とも呼ぶ）とも原稿（紙幣）からの生の光を撮像素子１１で受光できるので忠実な画像出力を精度良くに読み取ることができる。また、仮想撮像素子を画像データとして補間し変則的に撮像素子数を増やすことがないのでイメージセンサとしての信号処理が容易である。
この発明の実施例１によるイメージセンサの断面構成図である。 この発明の実施例１によるイメージセンサのロッドレンズアレイと透過板及びセンサ基板の位置関係を示す図である。 この発明の実施例１による透過板の切欠き部の位置と概略形状を示す図である。 この発明の実施例１によるイメージセンサのセンサ基板上の半導体チップの位置関係を説明する図である。 この発明の実施例１による透過板の下面部の形状を説明する平面図である。 この発明の実施例１による透過板の下面部の断面形状を説明する図である。 この発明の実施例１による透過板の部分外観図である。 媒質境界における光の屈折を説明する図である。 この発明の実施例１による透過板の構造原理を説明する図である。 この発明の実施例１によるイメージセンサのセンサ基板上の光の経路について説明する図である。 この発明の実施例１による透過板の具体的構造を示す部分拡大図である。 この発明の実施例１によるイメージセンサの最適画質領域を説明する図である。 この発明の実施例２による透過板の部分外観図である。 突出傾斜した媒質境界における光の屈折を説明する図である。 この発明の実施例２による透過板の構造原理を説明する図である。 この発明の実施例３による透過板の部分外観図である。 この発明の実施例４による透過板の部分外観図である。 この発明の実施例５によるイメージセンサの最適画質領域を説明する図である。 この発明の実施例６によるイメージセンサの断面構造図である。 この発明の実施例６によるイメージセンサの他の断面構造図である。 この発明の実施例７による透過板の部分外観図である。
符号の説明
１ 光源（多色光源）、 ２ ガラス板、 ３ 被写体（原稿）、 ４ レンズ（ロッドレンズアレイ）、 ５ 透過板、 ６ 半導体チップ（センサチップ）、 ７ センサ基板、 ８ コネクタ、 ９ 筐体、 １０ 駆動プラテン、 １１ 撮像素子（受光素子）、 １１ｅ 境界撮像素子、 ３０ 遮光塗料、 ５１ 透過板、 ５２ 透過板、 ５３透過板、 ９１筐体（段付き筐体）、９１ａ 窪み部。

Claims (5)

  1. 被写体に光を照射する光源と、前記被写体の移動方向と直角方向に延在し所定の読み取り幅に渡り前記被写体からの反射光を集束するレンズと、このレンズにより集束された反射光を受光する複数の撮像素子を直線的に配設した多数の半導体チップを搭載したセンサ基板と、前記レンズとセンサ基板との間に介在し、お互いに隣接する前記半導体チップの隙間近傍に設けられた切欠き部若しくは突出部を有する透過体と、少なくとも前記レンズとセンサ基板と透過体とを収納又は保持する筐体とを備えたイメージセンサ。
  2. 前記切欠き部若しくは突出部が被写体の移動方向と平行した面に分割形成された透過体であることを特徴とする請求項１記載のイメージセンサ。
  3. 分割形成された透過体は切欠き部と突出部との双方を混在していることを特徴とする請求項１又は２に記載のイメージセンサ。
  4. 光が通過する前記透過体の切欠き部及び又は突出部の光路軸との平行面は遮光が施されてあることを特徴とする請求項１乃至３の１項に記載のイメージセンサ。
  5. 被写体に光を照射する光源と、前記被写体の移動方向と直角方向に延在し所定の読み取り幅に渡り前記被写体からの反射光を集束するレンズと、このレンズにより集束された反射光を受光する複数の撮像素子を直線的に配設した多数の半導体チップを搭載したセンサ基板と、前記レンズとセンサ基板との間に介在し、お互いに隣接する前記半導体チップの隙間近傍に設けられた切欠き部又は及び突出部を有する透過体と、少なくとも前記レンズとセンサ基板と透過板とを収納又は保持し、且つ前記センサ基板と透過体との位置を選択載置するようにした筐体とを備えたイメージセンサ。

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JP4697494B1 (ja) 2010-02-24 2011-06-08 三菱電機株式会社 イメージセンサ用ｉｃ及びそれを用いた密着型イメージセンサ
CN101951456B (zh) * 2010-10-13 2015-12-16 威海华菱光电股份有限公司 一种高分辨率的线阵图像读取装置
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