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JP2005286436A - High frequency wiring board - Google Patents

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JP2005286436A
JP2005286436A JP2004093886A JP2004093886A JP2005286436A JP 2005286436 A JP2005286436 A JP 2005286436A JP 2004093886 A JP2004093886 A JP 2004093886A JP 2004093886 A JP2004093886 A JP 2004093886A JP 2005286436 A JP2005286436 A JP 2005286436A
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signal line
differential signal
differential
conductor layer
line
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Masanao Kabumoto
正尚 株元
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems wherein unneeded capacitance components are generated between a through conductor formed at a prescribed interval along a signal transmission direction and the adjacent signal line, and the minute mismatching of the characteristic impedance of respective paired signal lines at a part in which the through conductor is present causes large mismatching as the characteristic impedance of a differential signal line. <P>SOLUTION: A plurality of through conductors 7 formed in a row are formed in parallel with the direction of a line are formed at both the sides of the differential signal line 8 comprising a pair of signal lines formed in parallel on the upper surface of a dielectric substrate 2, the arrangement interval of the through conductors 7 is 1/4 or smaller of the wavelength of a high-frequency signal transmitted by the differential signal line 8, and a cutout is formed at a part positioned between the differential signal line 8 and the through conductor 7 at a side opposite to the differential signa line 8 in an identical plane grounding conductor layer 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、GHz帯の高周波帯域で使用されるIC,LSI等の高周波回路部品または高周波回路装置と入出力部との間にインピーダンス整合等の目的で設けられる高周波用配線基板に関し、特に高周波信号の伝送特性を改善した差動信号線路構造を有する高周波用配線基板に関する。   The present invention relates to a high-frequency circuit board provided for the purpose of impedance matching or the like between a high-frequency circuit component such as an IC or LSI or a high-frequency circuit device used in a high-frequency band in the GHz band and an input / output unit. The present invention relates to a high-frequency wiring board having a differential signal line structure with improved transmission characteristics.

近年の通信技術の高周波化および大容量化に伴いIC,LSI,半導体レーザ(PD:Photo Diode)等の通信用デバイスがより高周波で動作するようになってきており、この通信用デバイスを搭載するパッケージやそれを実装する回路基板に形成される信号線路においても、より高周波の高周波信号を低損失で伝送させる必要がある。このため、通信用デバイスのパッケージ内の信号線路や回路基板の信号線路を、高周波用の伝送線路として作製しなければならない。また、MUX(Multiplexer:多重回路),DEMUX(Demultiplexer:多重分離回路),NPU(Network Processor Unit)等の通信用デバイスの入出力端子数の増加に伴い、パッケージおよび回路基板の信号線路数が飛躍的に増加している。そのため、信号線路を高密度に形成しなければならず、自ずと信号線路間の間隔も狭くなる。しかしながら、高周波信号を伝送する信号線路同士を近接して配置すると、信号線路間に発生する寄生成分、特に信号線路間の電気的容量(浮遊容量)や相互インダクタンスによりノイズが発生して、アイソレーションの劣化、クロストークの発生等によって伝送損失が増大するという問題があった。   With recent increases in communication technology with higher frequencies and larger capacities, communication devices such as ICs, LSIs, and semiconductor lasers (PDs: Photo Diodes) are operating at higher frequencies, and these communication devices are mounted. Also in a signal line formed on a package or a circuit board on which the package is mounted, it is necessary to transmit a higher frequency high frequency signal with low loss. For this reason, the signal line in the package of the communication device and the signal line of the circuit board must be manufactured as a transmission line for high frequency. As the number of input / output terminals of communication devices such as MUX (Multiplexer), DEMUX (Demultiplexer), and NPU (Network Processor Unit) increases, the number of signal lines on the package and circuit board jumps. Is increasing. Therefore, the signal lines must be formed with high density, and the interval between the signal lines is naturally narrowed. However, if signal lines that transmit high-frequency signals are placed close to each other, noise is generated due to parasitic components generated between the signal lines, particularly electrical capacitance (stray capacitance) between the signal lines and mutual inductance. There has been a problem that transmission loss increases due to deterioration of the transmission and occurrence of crosstalk.

そこで、特許文献1に示されるような、誘電体基板の上面に平行に2つの信号線路から成る差動信号線路が設けられている高周波用配線基板において、隣接する差動信号線路の間に、接地導体層または電源導体層に接続される貫通導体を信号伝送方向に沿って所定の間隔で形成することにより、隣接する差動信号線路間の電磁気的干渉によるノイズを小さくするものが提案されている。
特開2003−224408号公報
Therefore, as shown in Patent Document 1, in a high-frequency wiring board in which a differential signal line composed of two signal lines is provided in parallel to the upper surface of a dielectric substrate, between adjacent differential signal lines, It has been proposed to reduce noise caused by electromagnetic interference between adjacent differential signal lines by forming through conductors connected to the ground conductor layer or power supply conductor layer at predetermined intervals along the signal transmission direction. Yes.
JP 2003-224408 A

しかしながら、上記従来の高周波用配線基板では、信号伝送方向に沿って所定の間隔で形成された貫通導体と貫通導体と隣接する信号線路との間で不要なキャパシタンス成分が発生し、貫通導体が存在する箇所において信号線路の特性インピーダンスが下がってしまい、差動信号線路の場合は対をなす各信号線路の特性インピーダンスの合計が差動信号線路としての特性インピーダンスとなるため、寄生容量による対をなす各信号線路の特性インピーダンスの微小な不整合が差動線路の特性インピーダンスとして大きな不整合を生じさせるという問題があった。   However, in the conventional high-frequency wiring board, an unnecessary capacitance component is generated between the through conductor formed at a predetermined interval along the signal transmission direction and the signal line adjacent to the through conductor, and the through conductor exists. The characteristic impedance of the signal line is lowered at the location where the signal is applied. In the case of a differential signal line, the sum of the characteristic impedances of each signal line forming a pair becomes the characteristic impedance of the differential signal line. There is a problem that a minute mismatch in the characteristic impedance of each signal line causes a large mismatch as a characteristic impedance of the differential line.

本発明は、上記問題点を解決するために完成されたものであり、その目的は、差動信号線路間の電気的干渉によるノイズを小さくし、かつ差動信号線路の特性インピーダンスを整合させ、高周波信号の反射損失および伝送損失を低減することである。   The present invention has been completed in order to solve the above problems, and its purpose is to reduce noise due to electrical interference between differential signal lines, and to match the characteristic impedance of the differential signal lines, It is to reduce reflection loss and transmission loss of high-frequency signals.

本発明の高周波用配線基板は、複数の誘電体層を積層してなる誘電体基板の上面または前記誘電体層の層間に互いに平行に形成された一対の信号線路から成る差動信号線路と、該差動信号線路の両側に所定間隔をもって形成された同一面接地導体層と、前記誘電体基板の下面の全面に形成された下面導体層と、前記同一面接地導体層および前記下面導体層を電気的に接続するとともに前記差動信号線路の両側に線路方向と平行に列を成して形成された複数の貫通導体とを具備しており、前記複数の貫通導体は、前記線路方向における配列間隔が前記差動信号線路で伝送される高周波信号の波長の4分の1以下であるとともに、前記同一面接地導体層は、前記差動信号線路と対向する辺の前記貫通導体と前記差動信号線路との間に位置する部位に切欠き部が形成されていることを特徴とする。   The high-frequency wiring board of the present invention includes a differential signal line composed of a pair of signal lines formed in parallel with each other between the upper surface of a dielectric substrate formed by laminating a plurality of dielectric layers or between the dielectric layers; The same-surface ground conductor layer formed on both sides of the differential signal line with a predetermined interval; the lower-surface conductor layer formed on the entire lower surface of the dielectric substrate; the same-surface ground conductor layer and the lower-surface conductor layer; A plurality of through conductors that are electrically connected and formed in rows on both sides of the differential signal line in parallel with the line direction, and the plurality of through conductors are arranged in the line direction. The interval is equal to or less than a quarter of the wavelength of the high-frequency signal transmitted through the differential signal line, and the coplanar ground conductor layer includes the through conductor on the side facing the differential signal line and the differential. Parts located between signal lines Wherein the notch is formed.

また、本発明の高周波用配線基板は好ましくは、前記切欠き部は円弧状であることを特徴とする。   The high-frequency wiring board of the present invention is preferably characterized in that the notch has an arc shape.

また、本発明の高周波配線基板は好ましくは、前記差動信号線路は、複数のものが平行に形成されていることを特徴とする。   The high-frequency wiring board of the present invention is preferably characterized in that a plurality of the differential signal lines are formed in parallel.

本発明の高周波用配線基板によれば、誘電体基板の上面または層間に互いに平行に形成された一対の信号線路から成る差動信号線路の両側に線路方向と平行に列を成して形成された複数の貫通導体を形成し、これらの貫通導体の配列間隔を差動信号線路で伝送される高周波信号の波長の4分の1以下としたことから、差動信号線路の両側に擬似的な導体壁が形成されたことになり、差動信号線路と隣接する他の信号線路との間に生じる電界の結合(カップリング)を抑制することができるため、電磁気的干渉によるノイズを小さくすることができる。さらに、同一面接地導体層は、差動信号線路と対向する辺の貫通導体と差動信号線路との間に位置する部位に切欠き部が形成されていることから、貫通導体と信号線路との間の不要なキャパシタンス成分による特性インピーダンスの低下分を、同一面接地導体層の切欠き部と差動信号線路間のキャパシタンス成分の減少による特性インピーダンスの上昇分で相殺することができ、差動線路の特性インピーダンスを均一にすることができる。   The high-frequency wiring board of the present invention is formed in rows on both sides of a differential signal line composed of a pair of signal lines formed in parallel with each other on the upper surface or between layers of the dielectric substrate in parallel with the line direction. A plurality of through conductors are formed, and the arrangement interval of these through conductors is set to ¼ or less of the wavelength of the high-frequency signal transmitted through the differential signal line. Since the conductor wall is formed and the coupling (coupling) of the electric field generated between the differential signal line and other adjacent signal lines can be suppressed, the noise due to electromagnetic interference is reduced. Can do. Furthermore, since the notched portion is formed in a portion located between the through conductor on the side facing the differential signal line and the differential signal line, the same-surface ground conductor layer is formed between the through conductor and the signal line. The decrease in characteristic impedance due to the unnecessary capacitance component between the two can be offset by the increase in characteristic impedance due to the decrease in the capacitance component between the notch on the ground conductor layer and the differential signal line. The characteristic impedance of the line can be made uniform.

また、本発明の高周波用配線基板、切欠き部を円弧状とした場合には、同一面接地導体層の差動信号線路と対向する辺において、差動信号線路に伝達される信号の進行方向と逆向きに流れる帰路電流の流れをスムーズにすることができ、不要な電磁放射を抑制することができる。   Further, in the case of the high frequency wiring board of the present invention, when the cutout portion has an arc shape, the traveling direction of the signal transmitted to the differential signal line on the side facing the differential signal line of the same-surface ground conductor layer The flow of the return current flowing in the opposite direction can be made smooth, and unnecessary electromagnetic radiation can be suppressed.

また、本発明の高周波用配線基板は、複数の差動信号線路を平行に形成した場合には、MUX,DEMUX,NPU等の通信用デバイスの入出力端子数の増加に対応可能である。   The high-frequency wiring board of the present invention can cope with an increase in the number of input / output terminals of communication devices such as MUX, DEMUX, NPU, etc., when a plurality of differential signal lines are formed in parallel.

本発明の高周波用配線基板(以下、高周波基板ともいう)について以下に詳細に説明する。図1(a),(b),(c)は、本発明の高周波基板について実施の形態の一例を示す平面図および断面図である。これらの図において、1は高周波基板、2は誘電体基板、3は差動信号線路8を成す第1の信号線路、4は差動信号線路8を成す第2の信号線路、5は同一面接地導体層、6は下面導体層、7は貫通導体である。   The high-frequency wiring board of the present invention (hereinafter also referred to as a high-frequency board) will be described in detail below. 1A, 1B, and 1C are a plan view and a cross-sectional view showing an example of an embodiment of a high-frequency substrate according to the present invention. In these figures, 1 is a high-frequency substrate, 2 is a dielectric substrate, 3 is a first signal line forming a differential signal line 8, 4 is a second signal line forming a differential signal line 8, and 5 is the same surface contact. A ground conductor layer, 6 is a bottom conductor layer, and 7 is a through conductor.

本発明の高周波基板1は、誘電体基板2の上面に形成された、平行な2つの信号線路3,4から成る差動信号線路8と、差動信号線路8の両側に形成された同一面接地導体層5と、誘電体基板2の下面の全面に形成された下面導体層6と、同一面接地導体層5および下面導体層6を電気的に接続するとともに差動信号線路8の線路方向に平行に列を成して形成された複数の貫通導体7とを具備し、差動信号線路8の線路方向における貫通導体7の配列間隔が、差動信号線路8で伝送される高周波信号の波長の4分の1以下であり、同一面接地導体層5は、差動信号線路8と対向する辺の貫通導体7と差動信号線路8との間に位置する部位に切欠き部が形成されている。これにより、差動信号線路8と同一面接地導体層5と下面導体層6とでコプレーナ線路を構成している。   The high-frequency substrate 1 of the present invention includes a differential signal line 8 formed of two parallel signal lines 3 and 4 formed on the upper surface of a dielectric substrate 2, and the same surface contact formed on both sides of the differential signal line 8. The ground conductor layer 5, the lower conductor layer 6 formed on the entire lower surface of the dielectric substrate 2, the same-surface ground conductor layer 5 and the lower conductor layer 6 are electrically connected and the line direction of the differential signal line 8 A plurality of through conductors 7 formed in rows in parallel to each other, and the arrangement interval of the through conductors 7 in the line direction of the differential signal line 8 is a high-frequency signal transmitted through the differential signal line 8. The same-surface ground conductor layer 5 has a notch portion at a portion located between the through conductor 7 on the side facing the differential signal line 8 and the differential signal line 8. Has been. Thus, the differential signal line 8 and the same-surface ground conductor layer 5 and the lower conductor layer 6 constitute a coplanar line.

そして、差動信号線路8の線路方向における貫通導体7の配列間隔が差動信号線路8で伝送される高周波信号の波長λの4分の1以下であることにより、差動信号線路8間に擬似的な導体壁が形成されたことになり、隣接し合う差動信号線路8間の容量結合が低減できる。その結果、隣接し合う差動信号線路8間のクロストークノイズが低減される。   And since the arrangement | positioning space | interval of the penetration conductor 7 in the line direction of the differential signal track | line 8 is below 1/4 of wavelength (lambda) of the high frequency signal transmitted with the differential signal track | line 8, A pseudo conductor wall is formed, and the capacitive coupling between the adjacent differential signal lines 8 can be reduced. As a result, crosstalk noise between the adjacent differential signal lines 8 is reduced.

また、本発明の高周波基板1は、詳細には、同一面接地導体層5は差動信号線路8と対向する辺の貫通導体7と差動信号線路8との間に位置する部位であって、線路方向に直交するとともに貫通導体7を通る線上に位置する部位に切欠き部が形成されている。これにより、貫通導体7と差動信号線路8との間の不要なキャパシタンス成分による特性インピーダンスの低下分を同一面接地導体層5の切欠き部と差動信号線路8との間のキャパシタンス成分の減少による特性インピーダンスの上昇分で相殺することができる。その結果、特性インピーダンスの不整合による信号の劣化が少なく、良好な高周波特性を得ることができる。   Further, in the high-frequency substrate 1 of the present invention, specifically, the same-surface ground conductor layer 5 is a portion located between the through conductor 7 on the side facing the differential signal line 8 and the differential signal line 8. A notch is formed in a portion that is orthogonal to the line direction and is located on a line passing through the through conductor 7. As a result, the decrease in characteristic impedance due to an unnecessary capacitance component between the through conductor 7 and the differential signal line 8 is reduced by the capacitance component between the notch portion of the ground conductor layer 5 and the differential signal line 8. It can be offset by the increase in characteristic impedance due to the decrease. As a result, there is little signal degradation due to characteristic impedance mismatch, and good high frequency characteristics can be obtained.

さらに、第1の信号線路3と第2の信号線路4との間の間隔は、高周波信号の波長λの4分の1以下になっており、第1の信号線路3と第2の信号線路4とが電磁的に結合して差動信号線路8として機能することとなる。   Further, the distance between the first signal line 3 and the second signal line 4 is equal to or less than a quarter of the wavelength λ of the high-frequency signal, and the first signal line 3 and the second signal line 4 and electromagnetically couple to function as the differential signal line 8.

また、差動信号線路8を挟んで形成される左右の同一面接地導体層5と下面導体層6とを接続する左右の貫通導体7間の距離は、高周波信号の波長λ以下が好ましい。この場合、第1の信号線路3と第2の信号線路4との電界のカップリングがさらに強くなり、コプレーナ線路構造とされた差動信号線路8においてさらに良好な高周波信号の伝送特性が実現される。   The distance between the left and right through conductors 7 that connect the left and right same-surface ground conductor layers 5 and the lower conductor layer 6 formed with the differential signal line 8 interposed therebetween is preferably equal to or less than the wavelength λ of the high-frequency signal. In this case, the coupling of the electric field between the first signal line 3 and the second signal line 4 is further strengthened, and better transmission characteristics of high-frequency signals are realized in the differential signal line 8 having a coplanar line structure. The

本発明の高周波基板1における誘電体基板2の材料としては、アルミナ(Al)セラミックスやムライト(3Al・2SiO)セラミックス等のセラミックス,ガラスセラミックス等の無機材料、四フッ化エチレン樹脂(ポリテトラフルオロエチレン;PTFE),四フッ化エチレン−エチレン共重合樹脂(テトラフルオロエチレン−エチレン共重合樹脂;ETFE),四フッ化エチレン−パーフルオロアルコキシエチレン共重合樹脂(テトラフルオロエチレン−パーフルオロアルキルビニルエーテル共重合樹脂;PFA)等のフッ素樹脂,ガラスエポキシ樹脂,ポリフェニレンエーテル樹脂,液晶ポリエステル,ポリイミド等の樹脂材料などが用いられる。また、誘電体基板2の形状、寸法(厚み、幅、長さ)は、高周波信号の周波数や特性インピーダンスなどに応じて適宜設定される。 Examples of the material of the dielectric substrate 2 in the high-frequency substrate 1 of the present invention include ceramics such as alumina (Al 2 O 3 ) ceramics and mullite (3Al 2 O 3 · 2SiO 2 ) ceramics, inorganic materials such as glass ceramics, and tetrafluoride. Ethylene resin (polytetrafluoroethylene; PTFE), tetrafluoroethylene-ethylene copolymer resin (tetrafluoroethylene-ethylene copolymer resin; ETFE), tetrafluoroethylene-perfluoroalkoxyethylene copolymer resin (tetrafluoroethylene- A fluorocarbon resin such as perfluoroalkyl vinyl ether copolymer resin (PFA) or the like, a glass epoxy resin, a polyphenylene ether resin, a liquid crystal polyester, a resin material such as polyimide, or the like is used. The shape and dimensions (thickness, width, length) of the dielectric substrate 2 are appropriately set according to the frequency of the high-frequency signal, the characteristic impedance, and the like.

本発明の第1の信号線路3、第2の信号線路4は、高周波信号伝送用として適した金属の導体層から成り、例えばCu層、Mo−Mn層、W層、Mo−Mnメタライズ層上にNiメッキ層およびAuメッキ層を被着させたもの、Wメタライズ層上にNiメッキ層およびAuメッキ層を被着させたもの、Cr−Cu合金層、Cr−Cu合金層上にNiメッキ層およびAuメッキ層を被着させたもの、TaN層上にNi−Cr合金層およびAuメッキ層を被着させたもの、Ti層上にPt層およびAuメッキ層を被着させたもの、またはNi−Cr合金層上にPt層およびAuメッキ層を被着させたものから成り、厚膜印刷法あるいは各種の薄膜形成法やメッキ処理法などにより形成される。その厚みや幅も伝送される高周波信号の周波数や特性インピーダンスなどに応じて設定される。 The first signal line 3 and the second signal line 4 of the present invention are made of a metal conductor layer suitable for high-frequency signal transmission, for example, on a Cu layer, a Mo—Mn layer, a W layer, or a Mo—Mn metallized layer. With a Ni plating layer and an Au plating layer deposited thereon, a W metallized layer with a Ni plating layer and an Au plating layer deposited thereon, a Cr—Cu alloy layer, a Ni plating layer on a Cr—Cu alloy layer And an Au plated layer deposited, a Ni—Cr alloy layer and an Au plated layer deposited on a Ta 2 N layer, a Pt layer and an Au plated layer deposited on a Ti layer, Or it consists of what deposited Pt layer and Au plating layer on the Ni-Cr alloy layer, and is formed by the thick film printing method or various thin film formation methods, plating methods, etc. The thickness and width are also set according to the frequency and characteristic impedance of the transmitted high frequency signal.

また、同一面接地導体層5、下面導体層6は、第1の信号線路3や第2の信号線路4等と同様の材料で同様の方法により形成すればよく、差動信号線路8と同一面接地導体層5との間隔、差動信号線路8と下面導体層6との間隔は、高周波信号の周波数や差動信号線路8の特性インピーダンスなどに応じて適宜設定される。   The same-surface ground conductor layer 5 and the lower conductor layer 6 may be formed of the same material as that of the first signal line 3 and the second signal line 4 by the same method and the same as the differential signal line 8. The distance between the surface ground conductor layer 5 and the distance between the differential signal line 8 and the lower surface conductor layer 6 are appropriately set according to the frequency of the high frequency signal, the characteristic impedance of the differential signal line 8, and the like.

また、同一面接地導体層5と下面導体層6とを電気的に接続する複数の貫通導体7は、スルーホール導体やビアホール導体から成り、または金属板、金属棒、金属パイプ等を埋設することにより設けられる。   The plurality of through conductors 7 that electrically connect the same-surface ground conductor layer 5 and the lower conductor layer 6 are made of through-hole conductors or via-hole conductors, or are embedded with a metal plate, metal rod, metal pipe, or the like. Is provided.

本発明の高周波基板1の作製は以下のように行なう。誘電体基板2がアルミナセラミックスからなる場合、まず誘電体基板2となるアルミナセラミックスのグリーンシートを準備し、これに所定の打ち抜き加工を施して貫通導体7となる貫通孔を形成する。その後、スクリーン印刷法によりWやMoなどの導体ペーストを貫通孔に充填するとともに、第1の信号線路3や第2の信号線路4等となる導体パターンおよびその他の導体層となる導体パターンを印刷塗布する。次に、1600℃で焼成を行い、最後に各導体層上にNiメッキおよびAuメッキを施すとよい。   The high frequency substrate 1 of the present invention is manufactured as follows. When the dielectric substrate 2 is made of alumina ceramic, first, an alumina ceramic green sheet to be the dielectric substrate 2 is prepared, and a predetermined punching process is performed on the green sheet to form a through hole to be the through conductor 7. After that, a conductive paste such as W or Mo is filled in the through holes by screen printing, and a conductor pattern that becomes the first signal line 3 or the second signal line 4 and a conductor pattern that becomes another conductor layer are printed. Apply. Next, baking is performed at 1600 ° C., and finally, Ni plating and Au plating may be performed on each conductor layer.

誘電体基板2の誘電体層間に差動信号線路8および同一面接地導体層5が形成される場合、誘電体基板2の上下主面に上下面導体層を形成し、貫通導体7にて同一面接地導体層5と上下面導体層とを電気的に接続する構造が好ましい。   When the differential signal line 8 and the same-surface ground conductor layer 5 are formed between the dielectric layers of the dielectric substrate 2, the upper and lower surface conductor layers are formed on the upper and lower main surfaces of the dielectric substrate 2, and the through conductor 7 is the same. A structure in which the surface ground conductor layer 5 and the upper and lower surface conductor layers are electrically connected is preferable.

なお、本発明は上記の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を行なっても何等差し支えない。例えば、同一面接地導体層5に形成される切欠き部は、矩形状、円弧状の形状に限らず、台形状、三角形状等の形状であってもよい。   Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention. For example, the notch formed in the ground contact conductor layer 5 is not limited to a rectangular shape or an arc shape, but may be a trapezoidal shape, a triangular shape, or the like.

また、切欠き部の線路方向における長さは、貫通導体7の幅(直径)と同じか、または貫通導体の幅よりも大きいことが好ましい。この場合、貫通導体と信号線路との間に発生するキャパシタンス成分をより確実に低下させることができる。   Moreover, it is preferable that the length in the line direction of a notch part is the same as the width | variety (diameter) of the penetration conductor 7, or is larger than the width | variety of a penetration conductor. In this case, the capacitance component generated between the through conductor and the signal line can be more reliably reduced.

さらに、切欠き部が円弧状で貫通導体7の断面形状が円形の場合、切欠き部の曲率半径が貫通導体7の直径よりも大きいことが好ましい。この場合、切欠き部の縁に直交して信号線路との間に発生する電気力線の密度を低下させることができ、切欠き部と信号線路との結合を弱めてそれらの間に発生するキャパシタンス成分をより確実に低下させることができる。   Furthermore, when the cutout portion has an arc shape and the cross-sectional shape of the through conductor 7 is circular, the radius of curvature of the cutout portion is preferably larger than the diameter of the through conductor 7. In this case, the density of electric lines of force generated between the signal line and the edge of the notch can be reduced, and the coupling between the notch and the signal line is weakened and generated between them. The capacitance component can be reduced more reliably.

(a)は、本発明の高周波用配線基板についての実施の形態の一例を示す平面図、(b)は(a)のA−A’線における断面図、(c)は(a)のB−B’線における断面図である。(A) is a top view which shows an example of embodiment about the high frequency wiring board of this invention, (b) is sectional drawing in the AA 'line of (a), (c) is B of (a) It is sectional drawing in the -B 'line. 本発明の高周波用配線基板について実施の形態の他の例を示す平面図である。It is a top view which shows the other example of embodiment about the wiring board for high frequencies of this invention.

符号の説明Explanation of symbols

1:高周波用配線基板
2:誘電体基板
3:第1の信号線路
4:第2の信号線路
5:同一面接地導体層
6:下面導体層
7:貫通導体
8:差動信号線路
1: High-frequency wiring board 2: Dielectric substrate 3: First signal line 4: Second signal line 5: Coplanar ground conductor layer 6: Bottom conductor layer 7: Through conductor 8: Differential signal line

Claims (3)

複数の誘電体層を積層してなる誘電体基板の上面または前記誘電体層の層間に互いに平行に形成された一対の信号線路から成る差動信号線路と、該差動信号線路の両側に所定間隔をもって形成された同一面接地導体層と、前記誘電体基板の下面の全面に形成された下面導体層と、前記同一面接地導体層および前記下面導体層を電気的に接続するとともに前記差動信号線路の両側に線路方向と平行に列を成して形成された複数の貫通導体とを具備しており、前記複数の貫通導体は、前記線路方向における配列間隔が前記差動信号線路で伝送される高周波信号の波長の4分の1以下であり、前記同一面接地導体層は、前記差動信号線路と対向する辺の前記貫通導体と前記差動信号線路との間に位置する部位に切欠き部が形成されていることを特徴とする高周波用配線基板。 A differential signal line composed of a pair of signal lines formed in parallel with each other between the upper surface of the dielectric substrate formed by laminating a plurality of dielectric layers or between the layers of the dielectric layers, and predetermined on both sides of the differential signal line The differential ground conductor layer formed at intervals, the lower conductor layer formed on the entire lower surface of the dielectric substrate, and the differential ground conductor layer and the lower conductor layer are electrically connected and the differential A plurality of through conductors formed in rows on both sides of the signal line in parallel with the line direction, and the plurality of through conductors are transmitted in the differential signal line at an arrangement interval in the line direction. Is equal to or less than a quarter of the wavelength of the high-frequency signal, and the coplanar ground conductor layer is located at a portion located between the through conductor on the side facing the differential signal line and the differential signal line. Features a notch High-frequency wiring board. 前記切欠き部は円弧状であることを特徴とする請求項1記載の高周波用配線基板。 2. The high frequency wiring board according to claim 1, wherein the notch has an arc shape. 前記差動信号線路は、複数のものが平行に形成されていることを特徴とする請求項1または請求項2記載の高周波用配線基板。 3. The high-frequency wiring board according to claim 1, wherein a plurality of differential signal lines are formed in parallel.
JP2004093886A 2004-03-26 2004-03-26 High frequency wiring board Pending JP2005286436A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755516B1 (en) 2006-06-27 2007-09-05 성균관대학교산학협력단 Differential Transmission Lines for Signal Integrity and Manufacturing Method Thereof
KR100844218B1 (en) 2006-12-13 2008-07-04 이해영 High-frequency transmission line device capable of common mode filtering
JP2009212400A (en) * 2008-03-05 2009-09-17 Ngk Spark Plug Co Ltd High-frequency package
JP2019016638A (en) * 2017-07-04 2019-01-31 株式会社ジェイデバイス Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0946008A (en) * 1995-07-27 1997-02-14 Shinko Electric Ind Co Ltd Wiring board for high frequency
JP2003124712A (en) * 2001-10-17 2003-04-25 Opnext Japan Inc High frequency transmission line, and electronic component or electronic device using the same
JP2003142904A (en) * 2001-11-02 2003-05-16 Nippon Telegr & Teleph Corp <Ntt> Transmission line
JP2003224408A (en) * 2002-01-30 2003-08-08 Kyocera Corp High frequency wiring board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0946008A (en) * 1995-07-27 1997-02-14 Shinko Electric Ind Co Ltd Wiring board for high frequency
JP2003124712A (en) * 2001-10-17 2003-04-25 Opnext Japan Inc High frequency transmission line, and electronic component or electronic device using the same
JP2003142904A (en) * 2001-11-02 2003-05-16 Nippon Telegr & Teleph Corp <Ntt> Transmission line
JP2003224408A (en) * 2002-01-30 2003-08-08 Kyocera Corp High frequency wiring board

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755516B1 (en) 2006-06-27 2007-09-05 성균관대학교산학협력단 Differential Transmission Lines for Signal Integrity and Manufacturing Method Thereof
KR100844218B1 (en) 2006-12-13 2008-07-04 이해영 High-frequency transmission line device capable of common mode filtering
JP2009212400A (en) * 2008-03-05 2009-09-17 Ngk Spark Plug Co Ltd High-frequency package
JP2019016638A (en) * 2017-07-04 2019-01-31 株式会社ジェイデバイス Semiconductor device
JP7037292B2 (en) 2017-07-04 2022-03-16 株式会社アムコー・テクノロジー・ジャパン Semiconductor device

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