JP2005277436A - Method of producing thick-film multi-layer substrates - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of producing a thick-film multi-layer substrate, which can easily make the resistance value of a thick-film resistor highly precise. <P>SOLUTION: In the method of producing the thick-film multi-layer substrates, a thick-film resistor 6 on a ceramic substrate 1 is fired at a temperature higher than the temperature of firing a glass insulating layer 2, which is formed thereon in contact therewith. According to the experiment of the inventors, it is found if the thick-film resistor 6 is fired at a temperature higher than the temperature of firing a glass insulating layer 2 which is formed thereon in contact therewith, this enables decrease of the change in the resistance in a subsequent high-temperature process of firing the glass insulating layers 2 to 4. Probably, it is inferred that by firing the thick-film resistor 6 at a high temperature, bonding force of ceramic particles or conductive particles which constitute the thick-film resistor 6 is reinforced and also is densified, this makes it difficult to generate solid phase diffusion between the thick-film resistor 6 and the glass insulating layer 2 which is in contact therewith. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a thick film multilayer substrate.

  Conventionally, when a thick film multilayer substrate is manufactured by printing and baking an insulating layer on a ceramic substrate and printing and baking a wiring pattern on the insulating layer, the plurality of insulating layers and the wiring pattern are all the same. Baking at temperature. Therefore, applying the above technique, printing and firing a thick film resistor on a ceramic substrate, and sequentially printing and firing a plurality of insulating layers on the ceramic substrate, the thick film resistor, the plurality of insulating layers and It is conceivable that all the wiring patterns are fired at the same temperature.

  However, in the above manufacturing method, the firing temperature of the thick film resistor and the firing temperature of the insulating layer, the wiring pattern, etc. are the same. Therefore, in the firing process after the thick film resistance firing, the thick film resistor is in contact with the thick film resistor. There is a problem that mutual diffusion or thermal stress occurs between the insulating layer and the resistance value of the thick film resistor greatly fluctuates. Therefore, as a conventional technique for coping with the above problem, at the following time point, laser trimming is performed on the thick film resistor to adjust the resistance value.

  In the first prior art, laser trimming is performed before firing the all-glass insulating layer. In the second prior art, laser trimming is carried out after passing through the entire glass insulating layer after firing of the entire glass insulating layer. In the third prior art, laser trimming is performed through a window provided with an all-glass insulating layer opened. In the fourth prior art, laser trimming is performed through a window provided in the upper glass insulating layer and through the lowermost glass insulating layer.

  However, each of the laser trimming methods described above has the following problems. First, in the first prior art, since the whole glass insulating layer and the wiring are fired after laser trimming, the resistance value of the thick film resistor fluctuates due to their thermal influence. FIG. 6 shows an example of resistance value fluctuations for each process of three thick film resistors provided on the same substrate. As is apparent from the figure, the absolute value of the resistance value variation varies depending on the sheet resistance value of the resistor, the shape of the resistor, or the like.

  In the second prior art, since laser trimming is performed through the thick all-glass insulating layer, absorption, scattering, and reflection occur at each glass insulating layer and its interface, and laser output is obtained for thick film resistance trimming. Need to increase. However, there is a concern that this increase in laser output may adversely affect peripheral wiring and circuit elements such as thermal stress due to an increase in thermal influence on the peripheral portion.

  In the third and fourth conventional techniques, since wiring cannot be laid in the window portion, when a large number of laser trimming thick film resistors are required, the design of the wiring pattern becomes complicated, the wiring length becomes longer than necessary, and the thickness increases. Since the membrane resistance is exposed, anxiety about the external environmental resistance arises. The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a thick film multilayer substrate that can easily increase the resistance value of the thick film resistor.

  The method for manufacturing a thick film multilayer substrate according to the present invention includes a thick film resistance forming step of printing and firing a thick film resistor on a ceramic substrate, and printing and firing an insulating layer on the surface of the thick film resistor and the ceramic substrate. In the method of manufacturing a thick film multilayer substrate including the insulating layer forming step, the glass included in the thick film resistor is converted into crystallized glass by firing the thick film resistor. In a preferred embodiment, the glass contained in the thick film resistor has a composition in which the melting point increases by 50 ° C. or more in the crystallization state compared to the amorphous state.

  According to this, in the insulating layer forming step, the interaction between the insulating layer and the thick film resistor can be suppressed, and the resistance value fluctuation of the thick film resistor can be reduced.

  The method for manufacturing a thick film multilayer substrate according to the present invention includes a thick film resistance forming step of printing and baking a thick film resistor on a ceramic substrate, and printing an insulating layer on the surface of the thick film resistor and the ceramic substrate. In the method for manufacturing a thick film multilayer substrate comprising an insulating layer forming step of baking, the glass contained in the insulating layer is converted into crystallized glass by baking the insulating layer. In a preferred aspect, the insulating layer is a first insulating layer in contact with the thick film resistor.

  According to this, it becomes possible to suppress the interaction between the insulating layer and the thick film resistor after the insulating layer forming step, and the resistance value fluctuation of the thick film resistor can be reduced.

[First embodiment]
An embodiment of the thick film multilayer substrate of the present invention will be described with reference to FIG. FIG. 1 shows a thick film multilayer substrate having three glass insulating layers 2 to 4 on an alumina substrate 1.

  A wiring 5 and a thick film resistor 6 are printed and fired on the substrate 1, glass insulating layers 2 to 4 are formed thereon, and a wiring 7 and a protective glass 71 are formed on the glass insulating layer 4. Yes. A circuit component 8 is soldered on the glass insulating layer 4. Reference numeral 9 denotes a hole-filling conductor filled in the via hole. Hereinafter, a method for manufacturing this thick film multilayer substrate will be described.

  (Thick film resistance forming step) First, as shown in FIG. 2, an alumina powder was kneaded with ethyl cellulose as a binder and tervineol as a solvent to prepare a conductor paste, and then calcined at about 1600 ° C. The conductor paste is printed on the substrate 1 and fired in a firing profile that is held in air at 800 to 1050 ° C. for 10 minutes to form the wiring 5.

  Next, after melting at 1200 to 1500 ° C., Ru02 powder is added to 50 to 80 vol% of glass powder having an average particle diameter of 2 to 5 μm composed of a mixture of PbO, Al 2 O 3, SiO 2, and B 2 O 3 in a predetermined mixing ratio after being quenched in water and pulverized. A mixed powder in which a predetermined vol% is mixed is prepared, a solvent (for example, terbinol) and a binder (for example, ethyl cellulose) are mixed into the mixed powder and kneaded to prepare a resistor paste, and this resistor paste is formed on the surface of the alumina substrate 1. The thick film resistor 6 is formed by printing so that the film thickness after firing is 7 to 15 μm and firing in a firing profile held in air at 820 to 1050 ° C. for 10 minutes.

  (Step of forming the lowermost layer of the glass insulating layer on the thick film resistor) Next, as shown in FIG. 3, after melting at 1200 to 1500 ° C., quenching in water and pulverizing CaO, Al 2 O 3 in a predetermined mixing ratio, A predetermined amount of a solvent (for example, tervineol) and a binder (for example, ethyl cellulose) is added to glass powder having an average particle diameter of 2 to 5 μm made of a mixture of ZrO, PbO, etc., and kneaded to prepare a glass paste. This glass paste is printed on the alumina substrate 1 with a thickness of 15 to 25 μm and fired with a firing profile held at 800 to 950 ° C. for 10 minutes to form the glass insulating layer 2.

  (Residual Glass Insulating Layer and Internal Wiring Forming Step) Next, as shown in FIG. 4, the glass insulating layer 3 is formed in the same process as the manufacturing process of the glass insulating layer 2 described above, and then the conductor paste is applied. The via holes communicating with each other in the glass insulating layers 2 and 3 are screen-printed and filled, and fired in a firing profile held in air at 800 to 950 ° C. for 10 minutes to form the lower portion of the hole-filling conductor 9.

  Next, the glass insulating layer 4 is formed in the same process as the manufacturing process of the glass insulating layer 2 described above, and then Ag paste is screen-printed and filled in the via hole of the glass insulating layer 4 communicating with the via hole, and the air The upper portion of the hole-filling conductor 9 is formed by firing with a firing profile held at 800 to 950 ° C. for 10 minutes.

  (Surface Layer Circuit Forming Step) Next, as shown in FIG. 4, a conductor paste is printed on the surface of the glass insulating layer 4 and fired with a firing profile held at 800 to 950 ° C. for 10 minutes to form the wiring 7. A protective glass paste was printed on top, and fired in air with a firing profile having a peak temperature of 500 to 650 ° C. to form a protective glass layer 71.

  The protective glass paste is melted at 1200 to 1500 ° C., quenched in water and pulverized into a glass powder having an average particle diameter of 2 to 5 μm composed of a mixture of PbO, SiO 2 and B 2 O 3 in a predetermined mixing ratio, a solvent (for example, terpineol), a binder A predetermined amount of (for example, ethyl cellulose) was added and kneaded.

  (Circuit Component Mounting Step) Next, as shown in FIG. 1, the circuit component 8 was soldered to the surface of the fired substrate on the surface of the glass insulating layer 4 to complete the step.

  Moreover, you may use the mixed powder of Ag and Pd or Ag and Pt instead of Ag powder of a conductor paste in a board | substrate formation process. Cu can also be used, but in this case, firing must be performed in an N2 atmosphere to prevent oxidation. Further, in the surface layer circuit format process, after the wiring is formed using the conductive paste, a resistor can be formed between the wirings.

  Next, FIG. 5 shows the result of monitoring the resistance value change of the thick film resistor 6 at the end of each manufacturing process. Moreover, the resistance value change of the thick film resistance produced by the same method as an Example is shown except baking of the thick film resistance 6 by the baking profile hold | maintained at 850 degreeC for 10 minutes. As can be seen from FIG. 6, the resistance value of the thick film resistor 6 is remarkably reduced compared to the comparative example product in the resistance value change of the present example product that is fired at a high temperature.

[Second Embodiment]
In the above embodiment, laser trimming was not performed, but after the thick film resistor 6 was formed, the laser trimming was performed to precisely determine the value of the thick film resistor 6 to a predetermined value, and then the substrate including the thick film resistor 6 Glass insulating layers 2 to 4 may be formed on 1. Since the thick film resistor 6 is fired at a high temperature, even if the glass insulating layers 2 to 4 are fired at a low temperature on the thick film resistor 6, there is almost no change as can be seen from FIG.

[Third embodiment]
In Example 2, the laser trimming was performed before the glass insulating layers 2 to 4 were formed. However, the laser trimming may be performed after the glass insulating layer 2 is formed, and then the glass insulating layers 3 and 4 may be formed. In this way, the resistance value fluctuation can be further reduced, and the thick film resistor 6 can be further covered with the glass insulating layers 3 and 4.

[Fourth embodiment]
Another embodiment will be described.

  In this embodiment, a large number of samples are used for the rate of change Rr = R4 / R3 between the resistance value R3 of the thick film resistor 6 after laser trimming and the resistance R4 of the thick film resistor 6 after the manufacturing process is completed. An average change rate Rrm is calculated, and a resistance value R3 at the time of laser trimming is determined using the average change rate Rrm at the time of laser trimming.

  For example, the target resistance value of the thick film resistor 6 is Rx. Therefore, laser trimming is performed by setting the laser trimming setting resistance value R3 of the thick film resistor 6 to R3 = Rx / Rrm by laser trimming. In this way, even if a thermal history is applied to the thick film resistor 6 by performing a glass insulating layer firing after the laser trimming, the resistance value fluctuation of the thick film resistor 6 due to the thermal history can be minimized. It becomes possible.

  This is because the firing process of the glass insulating layer and the wiring after the laser trimming is constant, and the resistance value fluctuation due to this is essentially within a certain range.

[Fifth embodiment]
A modification of the fourth embodiment will be described below. In this embodiment, an average rate of change Rrm is obtained for each thick film resistor 6 on the circuit board in the memory of a computer that performs resistance value comparison (comparison between the monitor resistance and the stored target resistance) in laser trimming. Remember it separately.

  This is to compensate for a slight difference in the average rate of change Rrm depending on the position on the circuit board, the resistance value of each thick film resistor 6, and the like. In this way, even if the average rate of change Rrm differs slightly depending on the position on the circuit board, the resistance value of each thick film resistor 6, etc., the resistance value variation of each thick film resistor 6 due to the thermal history is minimized. be able to.

[Sixth embodiment]
A modification of the fifth embodiment will be described below.

  A plurality of (for example, four) circuit boards are placed on the same handling boat (for example, made of alumina) as one lot, and each process is performed. In this embodiment, each thick film resistor 6 that requires laser trimming on each circuit board on the boat is added to the memory of a computer that performs resistance value comparison in laser trimming (comparison between monitor resistance and stored target resistance). The average rate of change Rrm is stored individually for all the numbers. Then, each of the resistance values R3 is individually laser trimmed as the target resistance Rx / Rrm with respect to the full thickness film resistor 6 that requires laser trimming.

  This is because the temperature or the like slightly changes for each circuit board depending on the mounting position of the circuit board on the ceramic boat, and the above-mentioned slight temperature change is also caused by the thick film resistor 6 formed at the same position on the circuit board. This is because the resistance value fluctuates. According to this embodiment, the resistance value fluctuation can be further suppressed.

  (Modification) Other modifications will be described below.

Modification 1
In Example 4, since the film thickness of the thick film resistor 6 and the average rate of change Rrm after the thermal history have a fixed relationship, if a graph showing this relationship is stored, the film thickness of the thick film resistor 6 is The average rate of change Rrm can be searched from this graph every time it is changed, and it is not necessary to experimentally derive the average rate of change Rrm each time the thickness of the thick film resistor 6 is changed.

Modification 2
In this embodiment, a barrier layer that prevents or reduces solid phase diffusion between the thick film resistor 6 and the glass insulating layer 2 is formed on at least the thick film resistor 6 after the thick film resistor 6 is formed and before the glass insulating layer 2 is formed. To form. This barrier layer may be formed before laser trimming or after that. As conditions for this barrier layer, there is little solid phase diffusion with the thick film resistor 6, solid phase diffusion between the thick film resistor 6 and the glass insulating layer 2 is reduced, and the heat history after the thick film resistor 6 is formed On the other hand, it is an insulating material that does not change phase. For example, a silicon nitride film, an alumina film, or the like can be used. As a manufacturing process, a CVD method, a PVD method, a printing baking method, or the like can be used. In addition, when forming before laser trimming, it is necessary to make it the thickness which can be cut by laser trimming.

Modification 3
In this aspect, after the thick film resistor 6 is formed and before the glass insulating layer 2 is formed or as the glass insulating layer 2, a buffer layer that is softer or more elastic than the glass insulating layer immediately above is formed on at least the thick film resistor 6. . This buffer layer may be formed before laser trimming or after that. The buffer layer condition is that solid phase diffusion with the thick film resistor 6 is small, solid phase diffusion between the thick film resistor 6 and the glass insulating layer 4 is reduced, and the thermal history after the thick film resistor 6 is formed. On the other hand, it is an insulating material that does not change phase, and a CVD method, a PVD method, a printing baking method, or the like can be adopted as a manufacturing process. In addition, when forming before laser trimming, it is necessary to make it the thickness which can be cut by laser trimming.

  In this way, the thermal stress caused by the difference in thermal expansion coefficient between the thick film resistor 6 and the glass insulating layer 2 or 3 can be relaxed by this buffer layer, and thereby the thick film resistor 6 caused by the thermal stress. The variation in resistance value can be reduced.

Modification 4
In this embodiment, after the thick film resistor 6 is formed and before the glass insulating layer 2 is formed or as the glass insulating layer 2, the thermal expansion coefficient between the thermal expansion coefficient of the glass insulating layer immediately above and the thermal expansion coefficient of the thick film resistor 6 is intermediate. A buffer layer having a rate is provided. This buffer layer may be formed before laser trimming or after that. The buffer layer condition is that solid phase diffusion with the thick film resistor 6 is small, solid phase diffusion between the thick film resistor 6 and the glass insulating layer 4 is reduced, and the thermal history after the thick film resistor 6 is formed. On the other hand, it is an insulating material that does not change in phase, and a CVD method, a PVD method, a printing baking method, or the like can be adopted as a manufacturing process. In addition, when forming before laser trimming, it is necessary to make it the thickness which can be cut by laser trimming.

  In this way, the thermal stress caused by the difference in thermal expansion coefficient between the thick film resistor 6 and the glass insulating layer 2 or 3 can be relaxed by this buffer layer, and thereby the thick film resistor 6 caused by the thermal stress. The variation in resistance value can be reduced.

Modification 5
In this embodiment, the main component of the glass contained in the thick film resistor 6 is crystallized glass.

  In this way, the glass inside the thick film resistor 6 is crystallized when the thick film resistor 6 is fired, and the melting point of the crystallized glass is increased. Preferably, a composition in which the melting point increases by 50 ° C. or more is higher than that in the amorphous state in the crystallized state. Therefore, the interaction between the insulating layer and the thick film resistor 6 in the subsequent baking process of the insulating layer can be more effectively suppressed.

  Further, not only the glass in the thick film resistor 6 but also the main component of the glass contained in the glass insulating layer 2 is also used as crystallized glass, thereby producing the same effect. That is, when the main component of the glass contained in the glass insulating layer 2 is crystallized glass, the interaction between the fired glass insulating layer 2 and the thick film resistor 6 adjacent thereto is suppressed. Thereby, the resistance value fluctuation | variation of the thick film resistance 6 can be reduced.

1 is a schematic cross-sectional view showing a thick film multilayer substrate of Example 1. FIG. 2 is a schematic cross-sectional view showing a manufacturing process of Example 1. FIG. 2 is a schematic cross-sectional view showing a manufacturing process of Example 1. FIG. 2 is a schematic cross-sectional view showing a manufacturing process of Example 1. FIG. It is a figure which shows the fluctuation | variation of the resistance value of the thick film resistance after each process in Example 1. FIG. It is a figure which shows the fluctuation | variation of the resistance value after each process of the three resistors formed in each part of the conventional thick film multilayer substrate.

Explanation of symbols

  1 is a substrate, 2 to 4 are glass insulating layers, and 6 is a thick film resistor.

Claims (4)

A thick film multilayer substrate comprising: a thick film resistor forming step of printing and firing a thick film resistor on a ceramic substrate; and an insulating layer forming step of printing and firing an insulating layer on the surface of the thick film resistor and the ceramic substrate. In the manufacturing method of
A method for producing a thick film multilayer substrate, characterized in that the glass contained in the thick film resistor is crystallized glass by firing the thick film resistor. The method for producing a thick film multi-layer substrate according to claim 1, wherein a melting point of the glass in the crystallization state included in the thick film resistor is higher by 50 ° C or more than in the amorphous state. A thick film multilayer substrate comprising: a thick film resistor forming step of printing and firing a thick film resistor on a ceramic substrate; and an insulating layer forming step of printing and firing an insulating layer on the surface of the thick film resistor and the ceramic substrate. In the manufacturing method of
A method for producing a thick film multilayer substrate, wherein the glass contained in the insulating layer is converted into crystallized glass by firing the insulating layer. The method for manufacturing a thick film multilayer substrate according to claim 3, wherein the insulating layer is a first insulating layer in contact with the thick film resistor.

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