JP2005272996A - Electroless gold plating method and silicon material gold plated by the method - Google Patents
Electroless gold plating method and silicon material gold plated by the method Download PDFInfo
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- JP2005272996A JP2005272996A JP2004122322A JP2004122322A JP2005272996A JP 2005272996 A JP2005272996 A JP 2005272996A JP 2004122322 A JP2004122322 A JP 2004122322A JP 2004122322 A JP2004122322 A JP 2004122322A JP 2005272996 A JP2005272996 A JP 2005272996A
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- JP
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- Prior art keywords
- gold plating
- plating film
- electroless gold
- electroless
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 35
- 239000010931 gold Substances 0.000 title claims abstract description 35
- 238000007747 plating Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002210 silicon-based material Substances 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract description 3
- -1 for example Chemical compound 0.000 abstract description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- ISDDBQLTUUCGCZ-UHFFFAOYSA-N dipotassium dicyanide Chemical compound [K+].[K+].N#[C-].N#[C-] ISDDBQLTUUCGCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
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- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本発明は主にシリコン表面の金めっき膜の形成に最適な無電解金めっきをするための方法に関する。The present invention mainly relates to a method for performing electroless gold plating optimal for the formation of a gold plating film on a silicon surface.
一般的にシリコン表面上に金めっき膜を形成するためには、まず前処理後金よりも卑なる金属たとえば 銅、ニッケルなどの金属膜を形成しその金属膜上に金めっき膜を形成している。In general, in order to form a gold plating film on a silicon surface, first, a metal film such as copper or nickel, which is lower than pre-processed gold, is formed, and a gold plating film is formed on the metal film. Yes.
上記のごとく従来は金めき膜を形成するために前処理として銅又はニッケルなどの金属膜を形成し、その上に金めっき膜を形成するのみであり工程がかかり単価上昇につながる。As described above, conventionally, in order to form a gold plating film, a metal film such as copper or nickel is formed as a pretreatment, and a gold plating film is only formed thereon.
シリコン表面に無電解金めっき用還元剤を作用させる第一の工程と、この第一の工程の後に無電解金めっき膜を形成することを特徴とする無電解金めっき方法。An electroless gold plating method, comprising: a first step of causing a reducing agent for electroless gold plating to act on a silicon surface; and forming an electroless gold plating film after the first step.
前記第一工程の前に被めっき材料の表面をパラジウム、すず、などの金属置換剤の水溶液により表面処理することを特徴とする請求項１に記載する無電解金めっき方法。2. The electroless gold plating method according to claim 1, wherein the surface of the material to be plated is surface-treated with an aqueous solution of a metal substitute such as palladium or tin before the first step.
請求項１又は請求項２記載の無電解金めっき方法により金めっきされたシリコン材料。A silicon material plated with gold by the electroless gold plating method according to claim 1 or 2.
この発明によりシリコン表面上に安価に金めっき膜を形成することができる。According to the present invention, a gold plating film can be formed on the silicon surface at low cost.
脱脂洗浄済みシリコン材（１ｍｍ×１ｍｍ×０．１ｍｍ）を用いて
前処理
１、温度２６℃のアルカリ水溶液（ＮａＯＨ ５０ｇ／Ｌ 又は ＫＯＨ ５０ｇ／Ｌなどを主成分とする）に４分間浸漬する。
２、水洗後 温度２６℃の塩化すずを１リットル中に０．５ｇ含む水溶液に５分間浸漬する。
３、水洗後 温度２６℃の塩化パラジウムを１リットル中に０．５ｇ含む水溶液に５分間浸漬する。なお上記例では金属置換剤として塩化すずおよび塩化パラジウム溶液を用いたが他に塩化亜鉛などのその他の金属置換剤で代用してもよい。
無電解金めっき工程
４、水洗後 温度２６℃のホウ水素化カリウムを１リットル中に４．０ｇ含む水溶液に５分間浸漬する。
５、シアン化金カリウム ５．８ｇ／Ｌ
シアン化カリウム １３．０ｇ／Ｌ
水素化カリウム １１．２ｇ／Ｌ
ホウ水素化カリウム ２１．６ｇ／Ｌ
浴温度 ７０℃
上記の組成の無電解金めっき液に１５分間浸漬し金めっき膜を形成するUse a degreased and cleaned silicon material (1 mm × 1 mm × 0.1 mm) for pretreatment 1 and immerse in an alkaline aqueous solution (mainly NaOH 50 g / L or KOH 50 g / L) at a temperature of 26 ° C. for 4 minutes.
2. After washing with water 5 minutes immersion in an aqueous solution containing 0.5 g of tin chloride at a temperature of 26 ° C.
3. After washing with water 5 minutes immersion in an aqueous solution containing 0.5 g of palladium chloride at a temperature of 26 ° C. In the above example, tin chloride and palladium chloride solution were used as metal substitutes, but other metal substitutes such as zinc chloride may be substituted.
Electroless gold plating step 4, after washing in water 5 minutes is immersed in an aqueous solution containing 4.0 g of potassium borohydride at a temperature of 26 ° C. in 1 liter.
5. Potassium cyanide potassium 5.8g / L
Potassium cyanide 13.0 g / L
Potassium hydride 11.2g / L
Potassium borohydride 21.6g / L
Bath temperature 70 ° C
A gold plating film is formed by dipping in an electroless gold plating solution having the above composition for 15 minutes.
なお上記実施例では還元剤としてホウ水素化カリウムを用い説明したが他の還元剤を用いてもよい。In addition, although the said Example demonstrated using potassium borohydride as a reducing agent, you may use another reducing agent.
なお上記実施例ではシリコン材（１ｍｍ×１ｍｍ×０．１ｍｍ）を用いて説明したが大きさ形状については限定されない。In the above embodiment, the silicon material (1 mm × 1 mm × 0.1 mm) has been described. However, the size and shape are not limited.
上記の形態においてシリコンの表面状態によっては 前処理 １、２、３ の工程は施さなくてもよい。In the above embodiment, depending on the surface condition of silicon, the pretreatment steps 1, 2, and 3 may not be performed.
上記の方法の量、時間、成分などは本発明から逸脱されることなく改変されることは明らかである。It will be appreciated that the amounts, times, components, etc. of the above methods may be modified without departing from the invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004122322A JP4406313B2 (en) | 2004-03-22 | 2004-03-22 | Electroless gold plating method and silicon material gold-plated by this method. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004122322A JP4406313B2 (en) | 2004-03-22 | 2004-03-22 | Electroless gold plating method and silicon material gold-plated by this method. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005272996A true JP2005272996A (en) | 2005-10-06 |
| JP4406313B2 JP4406313B2 (en) | 2010-01-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004122322A Expired - Fee Related JP4406313B2 (en) | 2004-03-22 | 2004-03-22 | Electroless gold plating method and silicon material gold-plated by this method. |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4406313B2 (en) |
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2004
- 2004-03-22 JP JP2004122322A patent/JP4406313B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP4406313B2 (en) | 2010-01-27 |
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