JP2005189304A - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optical device capable of increasing the degree of freedom of forming conditions of auxiliary wiring.
Light emission including a first electrode (151), a translucent second electrode (153), and a light emitting layer (152) interposed between the first and second electrodes on a substrate (120). An electro-optical device provided with an element and configured to extract light emitted from the light emitting element to the opposite side of the substrate through the second electrode, including a drive circuit for controlling a light emitting state of the light emitting element, A driving circuit layer (121) disposed above, a planarization layer (122) disposed above the driving circuit layer, an auxiliary wiring (142) disposed in the layer of the planarization layer, and a light emitting element A light emitting element layer (123) disposed on the upper side of the planarization layer, and a connection portion (153a) that is disposed through the planarization layer and the light emitting element layer and electrically connects the auxiliary wiring and the second electrode. And).
[Selection] Figure 4

Description

  The present invention relates to an electro-optical device such as an organic EL (electroluminescence) display device.

  As an electro-optical device (display device) that can display a thin, lightweight, and high-quality image, an organic EL (electroluminescence) display device has attracted attention. A general organic EL display device has a structure in which an organic EL element responsible for light emission and a drive circuit for driving the organic EL element are formed on a substrate. As a structure of the organic EL device, a bottom emission structure in which light emission from the organic EL element is emitted through the substrate and a top emission structure in which the light emission is emitted to the opposite side (opposite side) of the substrate are known. ing.

  In an active drive type organic EL display device, the upper electrode on the light emission side is generally formed as a film (so-called solid film) that covers substantially the entire display region, and is commonly used for all organic EL elements. is there. Since light is emitted through the upper electrode, when the top emission structure is adopted, transparent conductive such as indium and tin oxide (ITO) or indium and zinc oxide (IZO) is used as the upper electrode. A membrane is used.

However, since these transparent conductive films generally have higher resistance than metal films, a voltage drop is likely to occur in the upper electrode, and therefore the voltage applied to each organic EL element via the upper electrode is not uniform. Thus, the display quality is likely to be deteriorated, for example, the light emission luminance near the center of the display area is lowered. Such inconvenience becomes more noticeable as the size of the display area (screen size) increases. For example, in Japanese Patent Laid-Open No. 2002-318556 (Patent Document 1), an auxiliary wiring that is electrically connected to a plurality of locations in the plane of the upper electrode (second electrode) of the solid film is provided. Thus, there is described an electro-optical device (active matrix type flat display device) that suppresses variations in applied voltage in the display region plane and improves display quality.
JP 2002-318556 A

  In the above-described conventional electro-optical device, since the auxiliary wiring is formed in the same layer as other circuit elements (lower electrode and the like), it is necessary to lay out the auxiliary wiring and the other circuit elements well in the same layer. For this reason, the degree of freedom of design was low for other circuit elements and auxiliary wiring. In particular, when forming a large electro-optical device, when it is necessary to reduce the wiring resistance by securing a large width and thickness of other circuit elements such as scanning lines, data lines, or switching elements. The above-mentioned inconvenience becomes more remarkable.

  SUMMARY An advantage of some aspects of the invention is that it provides an electro-optical device and a method of manufacturing the same that can increase the degree of freedom in forming conditions such as auxiliary wiring.

  According to the first aspect of the present invention, a light emitting element including a first electrode, a translucent second electrode, and a light emitting layer interposed between the first and second electrodes is provided on a substrate, and the light emitting layer is provided. An electro-optical device configured to extract light emitted from the light-emitting device to the opposite side of the substrate through the second electrode, and including a drive circuit for controlling a light-emitting state of the light-emitting element on the substrate A driving circuit layer disposed; a planarizing layer disposed above the driving circuit layer; an auxiliary wiring disposed within the planarizing layer; and the light emitting element, the upper side of the planarizing layer A light emitting element layer disposed on the planarizing layer and the light emitting element layer, and a connection portion that electrically connects the auxiliary wiring and the second electrode.

  According to such a structure, since the auxiliary wiring is arranged in the layer of the planarization layer, the degree of freedom in forming conditions of the auxiliary wiring and the like is increased. Further, the effective light emitting area of the light emitting element is not reduced, and the drive circuit formation region is not eroded. Further, as compared with a case where auxiliary wiring is provided on the lower layer side relatively in the drive circuit layer or the like, a hole (contact hole) for providing a connection portion for electrically connecting the second electrode disposed on the upper surface and the auxiliary wiring is provided. ) Is shallow, and there is an advantage that the process of forming a contact hole and then filling a conductor to be a connection portion into the hole is facilitated. Furthermore, by arranging the auxiliary wiring in the flattening layer, the auxiliary wiring can be separated from other circuit elements by a relatively large distance, so that the floating generated between the auxiliary wiring and the other circuit elements. There is also an advantage that problems such as capacity can be easily avoided. The structure of the present invention is particularly suitable for an electro-optical device having a large screen, and an electro-optical device with high display quality can be obtained.

  Preferably, the light emitting element layer has a configuration in which a plurality of light emitting elements are arranged at a predetermined interval, and the second electrode is formed across the plurality of light emitting elements and is shared by the plurality of light emitting elements. The

  Thereby, it is possible to effectively suppress the display unevenness in the surface when the second electrode as the common electrode is provided on substantially one surface on the upper surface side.

  Preferably, the planarization layer is formed by stacking two or more planarization films, and the auxiliary wiring is disposed between the two adjacent planarization films.

  By adopting such a structure, it becomes easy to form an auxiliary wiring in the flattening layer.

  Preferably, the planarizing layer is made of a light absorbing material.

  As a result, even when a metal having a relatively high light reflectance is used for the auxiliary wiring, it is possible to suppress the reflected light of the incident light from the auxiliary wiring from being radiated to the outside and to improve the display quality. Become.

  Preferably, the light emitting element layer includes a partition partitioning the light emitting element formation region and other regions, and the partition is made of a light absorbing material.

  In this way, even when a metal with a relatively high light reflectance is used for the auxiliary wiring, it is possible to suppress the reflected light of incident light from the auxiliary wiring from being radiated to the outside and to improve the display quality. It becomes.

  Preferably, the auxiliary wiring is made of a conductive material having a low light reflectance.

  Even if the auxiliary wiring itself has a low light reflectance, it is possible to suppress the reflected light of the incident light from the auxiliary wiring from being radiated to the outside, and to improve the display quality.

  The second aspect of the present invention is an electronic apparatus including the above-described electro-optical device. Here, the “electronic device” means a device in general having a certain function, and there is no particular limitation on its configuration. Examples of such electronic devices include mobile phones, video cameras, personal computers, head mounted displays, rear or front projectors, televisions (TVs), roll-up TVs, fax machines with display functions, and digital cameras. A finder, a portable TV, a DSP device, a PDA, an electronic organizer, an electric bulletin board, a display for advertising, etc. are included.

  The third aspect of the present invention is an example of a preferred method of manufacturing the electro-optical device according to the first aspect of the present invention. Specifically, the third aspect of the present invention provides a light-emitting element including a first electrode, a light-transmitting second electrode, and a light-emitting layer interposed between the first and second electrodes on a substrate. A method of manufacturing an electro-optical device configured to extract light emitted from the light emitting layer to a side facing the substrate via the second electrode, wherein the light emitting state of the light emitting element is formed on the substrate. A first step of forming a drive circuit layer including a drive circuit for controlling; a second step of forming a planarization layer including an auxiliary wiring therein; and an upper side of the planarization layer. And a third step of forming a light emitting element layer including one or a plurality of the light emitting elements and forming a connection portion for electrically connecting the second electrode and the auxiliary wiring.

  According to this manufacturing method, the electro-optical device according to the first aspect of the present invention can be easily manufactured.

  Preferably, in the second step, after forming the first planarizing film, the auxiliary wiring is formed on the planarizing film, and a second planarizing film is stacked on the first planarizing film. Thus, the planarizing layer is formed.

  This makes it possible to easily form the auxiliary wiring in the flattening layer.

  Hereinafter, an electro-optical device according to an embodiment of the present invention will be described in detail. In the following description, an organic EL display device having a so-called top emission structure is taken as an example of an electro-optical device.

  1-4 is a figure explaining the structure of the organic electroluminescent display apparatus of this embodiment. More specifically, FIG. 1 is a diagram illustrating a circuit configuration of the organic EL display device. FIG. 2 is a plan view illustrating the structure of the pixel portion of the organic EL display device. FIG. 3 is a partial cross-sectional view taken along the line III-III shown in FIG. 4 is a partial cross-sectional view taken along the line IV-IV shown in FIG.

  As shown in FIG. 1, the organic EL display device 100 according to the present embodiment includes a display panel unit 102 including a plurality of pixel units 101 arranged in a matrix, and scanning line driving for driving the display panel unit 102. A circuit 103 and a data line driving circuit 104 are included.

  The display panel unit 102 includes n scanning lines Y1, Y2, Y3,... Arranged along the row direction and m data lines X1, X2, X3,. I have. Each pixel unit 101 is arranged corresponding to a position where each scanning line and each data line intersect.

  Each pixel unit 101 includes a switching transistor 110, a holding capacitor 111, a driving transistor 112, and an organic EL element 113, respectively. The switching transistor 110 has a gate connected to the scanning line, a source connected to the data line, and a drain connected to the gate of the driving transistor 112. The holding capacitor 111 is connected between the gate / source of the driving transistor 112. The driving transistor 112 has a gate connected to the drain of the switching transistor 110, a source connected to the power supply line Lo, and a drain connected to the anode of the organic EL element 113. The organic EL element 113 has a cathode connected to the cathodes of other organic EL elements 113.

  The scanning line driving circuit 103 generates a scanning signal in accordance with a horizontal synchronization signal given from an external device (not shown), and outputs the scanning signal to each scanning line, thereby sequentially driving the scanning line Y1 and the like. The data line driving circuit 104 generates an analog data signal in accordance with an image signal (image data) given from an external device (not shown), and outputs this to each data line.

  More specifically, when the scanning line driving circuit 103 selects one of the scanning lines Y1, Y2, Y3,... According to the horizontal synchronization signal and outputs an H level scanning signal, the selected scanning is performed. Each switching transistor 110 of the pixel portion 101 for one row connected to the line is turned on. In response to this, when a data signal is output from the data line driving circuit 104 via each of the data lines X1, X2, X3,... A data signal is provided. As a result, an amount of charge corresponding to the data signal is accumulated in the storage capacitor of each pixel portion 101, and the conductivity of the driving transistor 112 is controlled accordingly. Then, a driving current of a level corresponding to the conductivity is supplied from the driving transistor 112 to the organic EL element 113. The organic EL element 113 emits light with a luminance corresponding to the level of the supplied drive current.

  Thereafter, each scanning line is sequentially selected by the scanning line driving circuit 103 and a data signal is supplied to each pixel unit 101 by the data line driving circuit 104, whereby each organic EL element 113 included in the pixel unit 101 is driven. By emitting light with luminance corresponding to the current level, an image is displayed on the display panel unit 102.

  Next, the structure of the organic EL display device according to the present embodiment will be described in detail with reference to FIGS. In FIG. 2, some components such as an interlayer insulating film described later are omitted for easy understanding of the configuration of the pixel portion 101. Although the driving transistor 113 is shown in the sectional view shown in FIG. 3, the switching transistor 112 and the like have the same configuration.

  As shown in each drawing, the organic EL display device 100 includes a driving circuit layer 121 including a driving circuit for controlling the light emission state of the organic EL element, a planarization layer 122, on a substrate 120 made of glass or the like, A light emitting element layer 123 including a plurality of organic EL elements is stacked.

  The drive circuit layer 121 includes a switching transistor 110, a holding capacitor 111, a driving transistor 112, and respective components corresponding to scanning lines and data lines connected thereto. More specifically, the drive circuit layer 121 includes semiconductor films 130a to 130c, insulating films 131a to 131c, and conductive films 132a and 132b.

  The semiconductor film 130 a is formed in an island shape on the substrate 120 and functions as an active layer of the switching transistor 110. The semiconductor film 130 c is formed in an island shape on the substrate 120 and functions as an active layer of the driving transistor 112. The semiconductor film 130b functions as one electrode of the storage capacitor 111. For example, a polycrystalline silicon film (polysilicon film) is used as these semiconductor films.

The insulating film 131a is formed on the substrate 120 so as to cover the semiconductor film 130a and the like, and functions as a gate insulating film of each transistor or functions as an insulator interposed between the electrodes of the storage capacitor 111. The insulating film 131a is made of, for example, silicon dioxide (SiO ₂ ).

  The conductive film 132a is formed by patterning in a predetermined shape over the insulating film 131a. The conductive film 132a functions as a gate electrode of the driving transistor 112 as shown in FIG. In addition, as illustrated in FIG. 2 or 4, the conductive film 132 a functions as a gate electrode of the switching transistor 111 and also functions as a scanning line connected to the gate electrode. The conductive film 132a is formed using a conductive material such as aluminum (Al), for example.

The insulating film 131b is for insulating between the conductive film 132a and the conductive film 132b (interlayer insulating film). The insulating film 131b is made of, for example, silicon dioxide (SiO ₂ ).

  The conductive film 132b is formed by patterning in a predetermined shape over the insulating film 131b. For example, as shown in FIG. 3, the conductive film 132b is connected to the semiconductor film 130c (or 130a) constituting the driving transistor 112 (or switching transistor 110) through a contact hole penetrating the insulating films 131a and 131b. It functions as a drain electrode. The conductive film 132b functions as a data line or a power supply line as shown in FIG. 2 or FIG. The conductive film 132b is formed using a conductive material such as aluminum (Al).

The insulating film 131c is an insulating film (interlayer insulating film) for insulating between the conductive film 132b and the light emitting element layer 123 formed thereon. The insulating film 131c is made of, for example, silicon nitride (Si _x N _y ).

  The planarization layer 122 is for obtaining a substantially flat plane for facilitating the formation of the light emitting element layer 123, and is formed on the drive circuit layer 121 relatively thick (for example, about 2 μm). The planarization layer 122 is composed of two planarization films 141a and 141b. Note that the planarization layer 122 may be formed by stacking two or more planarization films. An auxiliary wiring 142 is disposed in the planarization layer 122. The planarization layer 122 is preferably formed using a light-absorbing photosensitive resin.

  The auxiliary wiring 142 is disposed between the planarization film 141a and the planarization film 141b. The auxiliary wiring 142 is electrically connected to the upper electrode 153 included in the light emitting element layer 123 through a connection portion 153 a provided in an opening that penetrates the planarization layer 122 and the light emitting element layer 123. The auxiliary wiring 142 is preferably formed using a conductive material having low light reflectance such as titanium (Ti), chromium (Cr), tungsten (W), molybdenum (Mo), or the like. It is also preferable to use a laminated film (for example, Ti / ITO) such as the above-mentioned metal and ITO. When such a laminated film is used, interference between the reflected light from the ITO surface and the reflected light from the Ti / ITO interface also occurs when incident light is reflected, so that the reflected light is significantly reduced.

  The light emitting element layer 123 includes a lower electrode (anode) 151, a light emitting layer 152, and an upper electrode 153 as components of the organic EL element, and a partition wall (bank) 154 that separates the formation area of the organic EL element from other areas. Is provided. The organic EL element is configured to include the lower electrode 151, the light emitting layer 152, and the upper electrode 153. By supplying current to the light emitting layer 152 through the lower electrode 151 and the upper electrode 153, the light emitting layer 152 emits light, The emitted light is emitted to the outside (on the side opposite to the substrate 120) through the upper electrode 153.

  The lower electrode 151 is formed using a conductive material such as copper (Cu), aluminum (Al), or chromium (Cr).

  The light emitting layer 152 is formed using, for example, a polydialkylfluorene derivative. Further, a hole transport layer or an electron transport layer may be interposed between the light emitting layer 152 and each of the electrodes 151 and 153. The hole transport layer is formed using, for example, a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (PEDOT / PSS). The electron transport layer is formed using, for example, a film of calcium, lithium, oxides thereof, fluorides, and the like.

  The upper electrode 153 is formed using a translucent material such as ITO, for example. As shown in FIG. 2 and the like, the upper electrode 153 is formed on substantially the entire surface of the substrate 120 so as to extend over the plurality of organic EL elements, and is shared by the plurality of organic EL elements. In FIG. 2, the upper electrode 153 is shown partially broken.

  In addition, a connection portion 153 a that is disposed through the planarization layer 122 and the light emitting element layer 123 to electrically connect the auxiliary wiring 142 and the lower electrode 151 is formed. As shown in FIG. 2, one or more connecting portions 153 a are provided in the pixel portion 101 to electrically connect the upper electrode 153 and the auxiliary wiring 142. As a result, even when the upper electrode 153 is formed using a material having a relatively low conductivity, the difference in voltage drop due to the in-plane position of the display region is alleviated and display unevenness is reduced.

  The partition wall 154 separates the formation region of the organic EL element from other regions, and is made of an organic material such as acrylic resin. The partition wall 154 is preferably formed using a light-absorbing photosensitive resin.

  The organic EL display device 100 of the present embodiment has such a configuration, and a manufacturing method thereof will be described next.

  5 and 6 are diagrams (process drawings) for explaining a method for manufacturing an organic EL display device. For convenience of explanation, in FIGS. 5 and 6, the left half of the drawing shows a cross-sectional view taken along the line III-III as in FIG. 3, and the right half of the drawing shows IV-IV as in FIG. A cross-sectional view along the line will be shown.

(Drive circuit layer forming process)
As shown in FIG. 5A, the driver circuit layer 121 is formed over the substrate 120. The drive circuit layer 121 can be formed using a known technique, and is formed as follows, for example.

  First, a semiconductor film is formed on the substrate 120, and then patterned into a desired shape by a photolithography method and an etching method, thereby forming the semiconductor films 130a to 130c constituting the above-described transistors or holding capacitors. In this example, a polycrystalline silicon film is used as the semiconductor film 130a and the like. As the polycrystalline silicon film, for example, an amorphous silicon film is formed by a film forming method such as a plasma CVD method, and then the amorphous silicon film is crystallized by a laser annealing method or a rapid heating method. Can be obtained.

  Prior to the formation of the semiconductor film, it is preferable to form a base protective film made of a silicon dioxide film or the like on the substrate 120. The silicon dioxide film can be formed by a film forming method such as a plasma CVD method.

  Next, an insulating film 131a is formed over the substrate 120 so as to cover these semiconductor films 130a and the like. In this example, a silicon dioxide film formed to a thickness of about 30 nm to 200 nm is used as the insulating film 131a. The silicon dioxide film can be formed by a film forming method such as a plasma CVD method.

  Next, a conductive film 132a is formed over the insulating film 131a. In this example, an aluminum film is used as the conductive film 132a. The aluminum film can be formed by a film forming method such as a sputtering method. An aluminum film is formed almost entirely on the insulating film 131a and then patterned into a predetermined shape, whereby a conductive film 132a that functions as a gate electrode of each transistor or functions as a scanning line is formed. Further, before and after the step of forming the conductive film 132a, a predetermined amount of phosphorus and boron ions are implanted into predetermined regions of the semiconductor films 130a to 130c.

  Next, an insulating film 131b is formed over the insulating film 131a so as to cover the conductive film 132a. In this example, a silicon dioxide film is used as the insulating film 131b. The silicon dioxide film can be formed by a film forming method such as a plasma CVD method.

  Next, a contact hole is formed by a photolithography method and an etching method at a predetermined position of the insulating film 131b, specifically, a position corresponding to the source / drain electrode of each transistor.

  Next, a conductive film 132b is formed over the insulating film 131b. In this example, an aluminum film is used as the conductive film 132b. The aluminum film can be formed by a film forming method such as a sputtering method. An aluminum film is formed on the insulating film 131b and in each contact hole, and then patterned into a predetermined shape, thereby forming a conductive film 132b that functions as a source / drain electrode of each transistor or functions as a signal line. .

  Next, an insulating film 131c is formed over the insulating film 131b so as to cover the conductive film 132b. In this example, a silicon dioxide film is used as the insulating film 131c. The silicon dioxide film can be formed by a film forming method such as a plasma CVD method. Next, a contact hole is formed by a photolithography method and an etching method at a predetermined position of the insulating film 131c, specifically, a predetermined position for conducting the conductive film 132b.

(Planarization layer forming process)
As shown in FIGS. 5B to 5D, a planarization layer 122 including an auxiliary wiring is formed on the upper side of the driver circuit layer 121 over the substrate 120.

  More specifically, first, as shown in FIG. 5B, a planarizing film 141a made of a photosensitive resin is formed over the insulating film 131c. In this example, an organic material such as polyimide resin is used as the photosensitive resin. Specifically, a planarizing film 141a having a contact hole is formed on the insulating film 131c by applying, drying, exposing, developing, and baking a photosensitive polyimide resin.

  Next, as illustrated in FIG. 5C, the auxiliary wiring 142 is formed over the planarization film 141a. The auxiliary wiring 142 is formed by, for example, forming the above-described low-reflective material such as titanium by a film forming method such as a sputtering method, and then patterning by a photolithography method and an etching method. At this time, an electrode is formed of the same material as that of the auxiliary wiring 142 in the contact hole portion of the planarization film 141a so that the conductive film 132b is not corroded.

  Next, as shown in FIG. 5D, a planarizing film 141b made of a photosensitive resin is formed on the planarizing film 141a so as to cover the auxiliary wiring 142. In this example, an organic material such as polyimide resin is used as the photosensitive resin. Specifically, a planarizing film 141b having a contact hole is formed by applying a photosensitive polyimide resin on the planarizing film 141a, drying, exposing, developing, and baking. As described above, after the first planarizing film 141a is formed, the auxiliary wiring 142 is formed on the planarizing film 141a, and the second planarizing film 141b is stacked on the first planarizing film 141a. Thus, the planarization layer 142 of this embodiment is formed.

(Light emitting element layer forming step)
Next, as illustrated in FIGS. 6A to 6C, the light-emitting element layer 123 is formed over the planarization layer 142.

  More specifically, the lower electrode 151 is formed on the planarization film 141b. In this example, a chromium film is used as the lower electrode 151. The chromium film can be formed by a film forming method such as a sputtering method. After forming a chromium film on the planarizing film 141b and in the contact hole, the lower electrode 151 is electrically connected to the drain of the driving transistor as shown in FIG. 6A by patterning in a predetermined shape. Is obtained.

  Next, as shown in FIG. 6B, the organic EL element formation region and other regions are divided, and a partition wall (bank) 154 having a contact hole corresponding to a predetermined position of the auxiliary wiring 142 is formed. The partition wall 154 is obtained, for example, by applying, drying, exposing, developing, and baking a photosensitive acrylic resin. Thereafter, the light emitting layer 152 is formed in the opening of the partition wall 154. A hole transport layer may be further interposed between the light emitting layer 152 and the lower electrode. The light emitting layer 152 and the hole transport layer can be formed by using, for example, a droplet discharge method (inkjet method), or can be formed by a vacuum deposition method. The light emitting layer 152 is formed using, for example, a polydialkylfluorene derivative. The hole transport layer is formed using, for example, a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (PEDOT / PSS).

  Next, a translucent upper electrode 153 is formed on substantially the entire top surface of the partition wall 154. When the upper electrode 153 is formed, a connection portion 153a is also formed in the contact hole. In this example, an ITO (tin-doped indium oxide) film is used as the upper electrode. The ITO film can be formed by various film forming methods such as sputtering, vacuum deposition, and CVD. Between the upper electrode 153 and the light emitting layer, a metal material such as a magnesium-silver alloy or an electron injecting organic compound may be formed as an electron injecting layer.

  Thereafter, a sealing layer is provided on the upper surface of the upper electrode 153 as necessary. As the sealing layer, silicon oxynitride or the like is preferably used.

  Thus, in the organic EL display device 100 according to the present embodiment, the auxiliary wiring 142 is arranged in the layer of the planarization layer 122, so that the degree of freedom in designing and manufacturing the auxiliary wiring 142 is increased. In addition, the effective light emitting area of the organic EL element is not reduced, and the formation region of the drive circuit is not eroded. Further, as compared with a case where auxiliary wiring is provided on a relatively lower layer side such as the drive circuit layer 121, a hole (for providing a connection portion 153a for electrically connecting the upper electrode 153 and the auxiliary wiring 142 disposed on the upper surface ( There is an advantage that the contact hole is shallow, and the process of forming the contact hole and then filling the conductor to be the connection portion 153a into the hole is facilitated. Furthermore, by arranging the auxiliary wiring 142 in the planarization layer 122, the auxiliary wiring 142 can be relatively separated from other circuit elements (each transistor, scanning line, data line, etc.). There is also an advantage that problems such as stray capacitance generated between the auxiliary wiring 142 and other circuit elements can be easily avoided. The structure of the present embodiment is particularly suitable for a large-screen electro-optical device, and an electro-optical device with high display quality can be obtained.

  In the organic EL display device according to the above-described embodiment, the photosensitive polyimide resin and the photosensitive acrylic resin are used for the planarization films 141a and 141b and the partition wall 154. However, the photosensitive polyimide resin containing a black dye or pigment is used. Alternatively, it is more preferable to use a photosensitive acrylic resin or other photosensitive resin. As a result, it is possible to suppress or prevent the light incident from the outside of the organic EL display device from being reflected and the contrast from being lowered or the visibility from being deteriorated. In the organic EL display device according to the above-described embodiment, the auxiliary wiring 142 is formed in a lattice shape so as to surround each pixel portion 101 in the planarization layer 122 (see FIG. 2 and the like). As shown in FIGS. 7 and 8, it is more preferable to form the auxiliary wiring 162 over a wide range over substantially the entire surface of the planarization layer 122. In the present embodiment, since there are no other wiring components in the planarization layer 122, the degree of freedom of the shape of the auxiliary wiring is high, and a desired film thickness, line width, etc. are required as necessary. It is possible to form auxiliary wirings by selecting them relatively freely.

  Next, various electronic devices configured using the organic EL display device 100 described above will be exemplified. By providing the organic EL display device of this embodiment, an electronic device capable of performing high-quality image display is obtained.

  9 and 10 are diagrams illustrating examples of electronic apparatuses to which the above-described electro-optical device can be applied. FIG. 9A shows an application example to a cellular phone, and the cellular phone 230 includes an antenna portion 231, an audio output portion 232, an audio input portion 233, an operation portion 234, and the electro-optical device 100 of the present invention. . As described above, the electro-optical device according to the invention can be used as a display unit. FIG. 9B shows an application example to a video camera. The video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and the electro-optical device 100 of the present invention.

  FIG. 9C shows an application example to a digital still camera. The digital still camera 250 includes a camera unit 251, an operation unit 252, and the electro-optical device 100 according to the present invention. FIG. 9D shows an application example to a head-mounted display. The head-mounted display 260 includes a band 261, an optical system storage unit 262, and the electro-optical device 100 according to the invention.

  FIG. 10A shows an application example to a television, and the television 300 includes the electro-optical device 100 according to the present invention. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 10B shows an application example to a roll-up television, and the roll-up television 310 includes the electro-optical device 100 according to the present invention.

  In addition, the electro-optical device according to the invention is not limited to the above-described example and can be applied to various electronic devices having a display function. For example, in addition to these, it can also be used for a fax machine with a display function, a portable personal computer (so-called PDA), a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like.

  The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, in the above-described embodiment, the case where the present invention is applied to an organic EL display device having a plurality of pixel portions 101 has been described. However, for example, the light emitting region is not divided into pixels and is relatively wide. The present invention is also applied to a case where each pixel portion has a large area, such as an organic EL device formed with an area and used as a light source or the like in each pixel in a display device with a very large screen. Is possible. By applying the present invention to such an organic EL device, variations in the light emission luminance within the light emission surface are suppressed, and a uniform light emission state can be obtained.

It is a figure explaining the structure of the organic electroluminescence display of one Embodiment. It is a figure explaining the structure of the organic electroluminescence display of one Embodiment. It is a figure explaining the structure of the organic electroluminescence display of one Embodiment. It is a figure explaining the structure of the organic electroluminescence display of one Embodiment. It is a figure (process drawing) explaining the manufacturing method of an organic electroluminescence display. It is a figure (process drawing) explaining the manufacturing method of an organic electroluminescence display. It is a figure explaining the other structural example of an organic electroluminescence display. It is a figure explaining the other structural example of an organic electroluminescence display. It is a figure which shows the example of the electronic device which can apply an electro-optical apparatus. It is a figure which shows the example of the electronic device which can apply an electro-optical apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Organic EL display device, 120 ... Board | substrate, 121 ... Drive circuit layer, 122 ... Planarization layer, 123 ... Light emitting element layer 123, 142 ... Auxiliary wiring

Claims (9)

A light-emitting element including a first electrode, a light-transmitting second electrode, and a light-emitting layer interposed between the first and second electrodes is provided on a substrate, and light emission from the light-emitting layer is emitted from the second electrode. An electro-optical device configured to be taken out through the opposite side of the substrate,
A drive circuit layer for controlling a light emitting state of the light emitting element, and a drive circuit layer disposed on the substrate;
A planarization layer disposed above the drive circuit layer;
An auxiliary wiring disposed in the flattening layer;
A light-emitting element layer including the light-emitting element and disposed on the planarization layer;
A connection part disposed through the planarization layer and the light emitting element layer and electrically connecting the auxiliary wiring and the second electrode;
An electro-optical device. The light emitting element layer has a configuration in which a plurality of the light emitting elements are arranged at predetermined intervals.
The electro-optical device according to claim 1, wherein the second electrode is formed over the plurality of light emitting elements and is shared by the plurality of light emitting elements. The planarization layer is formed by laminating two or more planarization films,
The electro-optical device according to claim 1, wherein the auxiliary wiring is disposed between two adjacent planarization films.   The electro-optical device according to claim 1, wherein the planarizing layer is made of a light-absorbing material. The light emitting element layer includes a partition that separates a formation area of the light emitting element from other areas,
The electro-optical device according to claim 1, wherein the partition wall is made of a light-absorbing material.   The electro-optical device according to claim 1, wherein the auxiliary wiring is made of a conductive material having low light reflectance.   An electronic apparatus comprising the electro-optical device according to claim 1. A light-emitting element including a first electrode, a light-transmitting second electrode, and a light-emitting layer interposed between the first and second electrodes is provided on a substrate, and light emission from the light-emitting layer is emitted from the second electrode. A method of manufacturing an electro-optical device configured to be taken out to the side facing the substrate,
Forming a driving circuit layer including a driving circuit for controlling a light emitting state of the light emitting element on a substrate;
A second step of forming a planarization layer including an auxiliary wiring inside the drive circuit layer;
A third step of forming a light emitting element layer including one or a plurality of the light emitting elements on the flattening layer and forming a connection portion for electrically connecting the second electrode and the auxiliary wiring;
A method for manufacturing an electro-optical device. The second step includes forming the auxiliary wiring on the planarizing film after forming the first planarizing film, and further laminating the second planarizing film on the first planarizing film. The method of manufacturing an electro-optical device according to claim 8, wherein the planarizing layer is formed.

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