JP2005170778A - Method for manufacturing silicon single crystal - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal by which the range of values of V/G (V is pulling speed, and G is temperature gradient) resulting an N region (no defect region) can be drastically and surely expanded, that is, when the single crystal of the N region is especially pulled, the production margin can be drastically expanded, and thereby, the production yield and the productivity of the crystal of the N region and/or an I region, especially, the crystal of the N region can be significantly improved. <P>SOLUTION: In the method for manufacturing the silicon single crystal by a Czochralski method, the single crystal in which the whole surface of the crystal is the N region and/or I region is grown by doping boron and carbon so that the total concentration of the dopants in the crystal becomes within a range of ≥1×10<SP>17</SP>atoms/cc when the single crystal is grown. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method of manufacturing a single crystal for cutting a wafer or the like used as a substrate of a semiconductor device such as a memory or a CPU, and in particular, an N region and / or an I region used in the most advanced field, particularly Relates to a method for producing a single crystal in the N region.

  As a single crystal for cutting out a wafer or the like used as a substrate of a semiconductor device such as a memory or a CPU, for example, a silicon single crystal can be cited, and mainly by Czochralski method (hereinafter abbreviated as CZ method). It is manufactured.

When a single crystal is manufactured by the CZ method, for example, it is manufactured using a single crystal manufacturing apparatus 1 as shown in FIG.
The single crystal manufacturing apparatus 1 has a member for containing and melting a raw material polycrystal such as silicon, a heat insulating member for shutting off heat, etc., and these are accommodated in the main chamber 2. Has been. A pulling chamber 3 extending upward from the ceiling of the main chamber 2 is connected, and a mechanism (not shown) for pulling the single crystal 4 with a wire 5 is provided on the upper portion.

  The main chamber 2 is provided with a quartz crucible 7 for containing the melted raw material melt 6 and a graphite crucible 8 for supporting the quartz crucible 7, and these crucibles 7 and 8 are rotated by a drive mechanism (not shown). The shaft 9 is supported so as to be movable up and down. The driving mechanism of the crucibles 7 and 8 raises the crucibles 7 and 8 by the amount corresponding to the liquid level drop in order to compensate for the liquid level drop of the raw material melt 6 accompanying the pulling of the single crystal 4.

  And the graphite heater 10 for melting a raw material is arrange | positioned so that the crucibles 7 and 8 may be surrounded. A heat insulating member 11 is provided outside the graphite heater 10 so as to surround the periphery of the graphite heater 10 in order to prevent heat from the graphite heater 10 from being directly radiated to the main chamber 2.

In addition, an inert gas such as argon gas is introduced into the main chamber 2 from a gas introduction port 14 provided in the upper portion of the pulling chamber 3. The introduced inert gas passes between the single crystal 4 being pulled up and the gas rectifying cylinder 12, passes between the lower end of the gas rectifying cylinder 12 and the liquid surface of the raw material melt 6, and flows out of the gas. 15 is discharged.
A heat shield member 13 is provided at the lower outer end of the gas rectifying cylinder 12 so as to face the raw material melt 6, and cuts radiation from the surface of the raw material melt 6 and keeps the surface of the raw material melt 6 warm. I am doing so.

  The raw material polycrystal is accommodated in the quartz crucible 7 arranged in the single crystal manufacturing apparatus 1 as described above, and heated by the graphite heater 10 to melt the polycrystalline raw material in the quartz crucible 7. In this way, the seed crystal 17 fixed by the seed holder 16 connected to the lower end of the wire 5 is deposited on the raw material melt 6 which is the melted polycrystalline raw material, and then the seed crystal 17 is rotated. By pulling up, the single crystal 4 having a desired diameter and quality is grown below the seed crystal 17.

  In general, a silicon single crystal pulled in this way has an intrinsic point defect of a vacancy type and an interstitial type. The saturation concentration of this intrinsic point defect is a function of temperature, and becomes supersaturated as the temperature decreases during crystal growth. In this supersaturated state, pair annihilation, outward diffusion, slope diffusion, etc. occur, and the process proceeds in the direction of relaxing the supersaturated state. As a result, either the vacancy type or the interstitial type remains as a dominant supersaturated point defect.

  It is known that when the crystal growth rate is high, the vacancy type tends to be in an excessive state, and conversely, when the crystal growth rate is low, the interstitial type is likely to be in an excessive state. If this excessive concentration exceeds a certain critical value, they aggregate and form secondary defects during crystal growth.

It is known that when the growth rate V is changed from a high speed to a low speed in the crystal axis direction, a defect distribution diagram as shown in FIG. 4 is obtained.
When the growth rate V is relatively high, the vacancy type becomes dominant in the single crystal. In this case, a void defect observed as COP (Crystal Originated Particle) or FPD (Flow Pattern Defect) is formed as the secondary defect. A region where the defects are distributed is called a V region. Further, it is known that defects observed as OSF (Oxidation Induced Stacking Fault) after the oxidation treatment are distributed near the boundary of the V region. A region where the defects are distributed is called an OSF region. These secondary defects cause deterioration of the oxide film characteristics.

  On the other hand, when the growth rate is relatively low, the interstitial type becomes dominant in the single crystal. In this case, secondary defects observed as LSEPD (Large Secco Etch Pit Defect), LFPD (Large Flow Pattern Defect), etc. due to the dislocation loop are formed. A region where this defect exists is called an I region.

  In recent years, it has been confirmed that there are FPD and COP due to vacancies and LSEPD and LFPD due to dislocation loops in which interstitial silicon is aggregated outside the OSF region between the V region and the I region. Yes. This region is called an N region (defect-free region). Further, this N region is further classified into an Nv region (region with many vacancies) adjacent to the outside of the OSF region and an Ni region (region with a lot of interstitial silicon) adjacent to the I region. It is known that the amount of precipitated oxygen is large when the oxygen is deposited, and the oxygen precipitation in the Ni region is smaller than that in the Nv region.

  The amount of introduction of these defects is considered to be determined by a parameter called V / G value, which is the ratio of the growth rate V and the temperature gradient G in the vicinity of the growth interface (see Non-Patent Document 1, for example). ). That is, by adjusting the growth rate V and the temperature gradient G so that the V / G value falls within a predetermined range, the single crystal can be pulled in a desired defect region.

  A crystal pulled so as to be an N region by adjusting the growth rate V and the temperature gradient G in the vicinity of the growth interface is a crystal called a defect-free crystal. In order to pull up a defect-free crystal in which the concentration of excessive point defects in the single crystal is extremely low, the V / G value represented by the growth rate V and the temperature gradient G in the vicinity of the growth interface is very limited. It was necessary to adjust the growth rate V and the temperature gradient G so as to be within the range (see, for example, Patent Documents 1 and 2). However, it is very difficult to pull up the single crystal by adjusting the growth rate V or the like within a very narrow range. For this reason, when pulling out defect-free crystals, there are actually problems that many defective products occur and yield and productivity are greatly reduced.

JP-A-8-330316 JP 11-79889 A V. V. Voronkov, Journal of Crystal Growth, 59 (1982), 625-643.

  The present invention has been made in view of such problems, and can greatly and more reliably expand the range of the V / G value serving as the N region, that is, the N region and / or the I region, Can greatly increase the manufacturing margin when pulling up a single crystal in the N region, thereby greatly improving the production yield and productivity of crystals in the N region and / or I region, particularly the N region. An object of the present invention is to provide a method for producing a single crystal.

The present invention has been made to solve the above-described problems. In a method for producing a silicon single crystal by the Czochralski method, boron and carbon are combined at the same concentration in the single crystal when the single crystal is grown. And a silicon single crystal manufacturing method characterized by growing a single crystal having an N region and / or an I region over the entire surface of the crystal by doping so as to be in a range of 1 × 10 ¹⁷ atoms / cc or more ( Claim 1).

In this way, when growing a single crystal, boron and carbon are doped so that the concentration in the single crystal is in the range of 1 × 10 ¹⁷ atoms / cc or more in total, so that the V region and the I region are increased. The range of the V / G value that becomes the N region existing outside the OSF ring in the middle can be greatly and more reliably expanded. In this way, the manufacturing margin when manufacturing a single crystal in the N region is greatly increased, so that the growth of the single crystal in the N region and / or the I region, particularly the N region, becomes relatively easy. The yield and productivity can be greatly improved.
The silicon single crystal may be doped with carbon by melting solid silicon raw material in the crucible and then charging solid carbon into the silicon melt, or by changing the atmospheric gas during melting of the raw material or when pulling up the silicon single crystal to CO. The silicon single crystal can also be doped with carbon by setting the atmosphere to contain carbon. However, if carbon doping is performed by charging high-purity carbon powder into the crucible when filling the silicon polycrystalline material into the crucible, the carbon concentration can be controlled easily and accurately. be able to. Furthermore, it is preferable that high-purity carbon powder is charged from the gap between the silicon polycrystal masses after filling the silicon polycrystal raw material into the crucible. According to this method, there is no fear that the carbon powder remains undissolved in the silicon melt and the crystals are dislocated. Further, it is more preferable that high purity carbon powder is sandwiched between flat portions of a silicon polycrystalline lump. With such a method, there is no risk of being blown away by the pressure in the furnace atmosphere.
On the other hand, the higher the concentration of boron doped in the single crystal, the longer the heat treatment is required to fly boron out of the single crystal, and the epitaxial layer grows on the wafer cut from the single crystal. When doing so, there may be a problem of autodoping. In addition, as the carbon concentration doped in the single crystal is increased, the device characteristics of a device manufactured from the single crystal may be deteriorated. However, in the present invention, by doping boron and carbon together, the manufacturing margin of the single crystal in the N region can be further widened, and each concentration can be reduced, in particular, reduced to half. It is also possible to suppress the occurrence of problems such as a long heat treatment time, autodoping, and deterioration of device characteristics.

After processing the silicon single crystal manufactured by the method of the present invention into a silicon wafer, heat treatment is performed at a temperature higher than 1000 ° C., thereby reducing the boron concentration on the surface of the silicon wafer to 1 × 10 ¹⁶ atoms / cc or less. It is preferable to adjust so that it may become the range (Claim 2).

After processing the high-concentration boron-doped silicon single crystal manufactured by the manufacturing method of the present invention into a silicon wafer, heat treatment is performed at a temperature higher than 1000 ° C., so that the boron concentration on the silicon wafer surface is 1 × 10 ^16. It can be adjusted to be in the range of atoms / cc or less. Thereby, it is possible to make desired quality, such as resistivity of a silicon wafer.

  In this case, the diameter of the silicon wafer to be manufactured may be 200 mm or more.

  The silicon wafer manufacturing method of the present invention has a manufacturing margin that becomes narrower as the diameter of a single crystal becomes larger, while a silicon with a large diameter having a diameter of 200 mm or more has been demanded in recent years for higher quality and lower cost. It is particularly effective for manufacturing wafers.

  As described above, according to the present invention, by doping boron and carbon so as to have a predetermined concentration or more, the range of the V / G value that becomes the N region can be greatly and more reliably expanded, That is, the manufacturing margin of the crystal in the N region and / or the I region, particularly the N region, can be greatly increased. Therefore, the production yield and productivity of the single crystal in the N region and / or the I region, particularly the single crystal in the N region, can be greatly improved.

Hereinafter, although this invention is demonstrated in detail, this invention is not limited to these.
The inventors of the present invention have made researches on a method of expanding a V / G value range that becomes an N region, that is, a manufacturing margin of a crystal in the N region.
When silicon single crystals are manufactured, impurities such as boron and carbon whose atomic radius is smaller than silicon are doped, and when the impurities enter the substitution position of silicon, the spacing between the lattices tends to increase, and interstitial point defects Is likely to occur. That is, the silicon single crystal is likely to be an I-rich one. Therefore, the V / G value at which the dominant point defect changes from the I region to the V region increases. That is, since the V / G value for the N region increases, the growth rate V at which a single crystal in the N region can be manufactured can be increased. In addition, since impurities such as boron and carbon have an effect of pinning (pressing) dislocations, generation of dislocation clusters that are secondary defects generated on the I-rich side is also suppressed.
Thus, by doping with boron or carbon, it is possible not only to increase the growth rate V for producing the crystal in the N region, but also to generate secondary defects on the I-rich side. As a result, the manufacturing margin of the crystal in the N region can be greatly expanded.

Here, in Japanese Patent Application Laid-Open No. 2003-2786, by doping high-concentration boron, the V / G value that becomes the N region can be increased, and the range of the V / G value that becomes the N region can be increased. It is described that it can be enlarged. Further, in the pamphlet of International Publication No. 01/79593, by doping carbon and nitrogen when producing a single crystal, the growth rate of the N region can be increased and the N region can be enlarged. It is described. However, these methods still have room for improvement in terms of certainty for expanding the growth rate margin of the N region crystal.
Moreover, when doping high concentration boron and carbon, there are the following problems. In other words, the higher the concentration of boron to be doped, the longer the heat treatment is required to fly boron out of the single crystal, and also when growing an epitaxial layer on a wafer cut from the single crystal. May cause autodoping problems. Furthermore, the higher the concentration of carbon to be doped, the more the device characteristics of a device manufactured from the single crystal may deteriorate.

From these facts, the present inventors have studied in more detail the impurities to be doped and the concentration thereof in order to widen the manufacturing margin of the single crystal in the N region.
Here, FIG. 5 shows the concentration of boron and carbon combined (atoms / cc; here, the concentration of boron and carbon is 1: 1), and the V / G value (mm) at which the OSF disappears at the crystal center. ² / ° C./min) is shown. From FIG. 5, if a crystal is grown by doping so that boron and carbon are combined in a range of 1 × 10 ¹⁷ atoms / cc or more (particularly 2 × 10 ¹⁷ atoms / cc or more), the crystal center It can be seen that the V / G value (mm ² / ° C. · min) at which the OSF disappears rapidly increases, and the manufacturing margin of the single crystal in the N region can be greatly and reliably increased.
On the other hand, as described above, the higher the concentration of boron to be doped and carbon to be doped, the more prominent problems such as long-time heat treatment, auto-doping, and deterioration of device characteristics are. However, by doping boron and carbon together, even if boron and carbon are combined at a high concentration, the concentration of each can be reduced by itself, especially by half. It is possible to suppress problems such as doping and deterioration of device characteristics.
As a result of these studies, in order to increase the manufacturing margin of the single crystal in the N region larger and surely, boron and carbon, which are substitutive (substitutional) impurities having a small atomic radius, are simultaneously and predetermined. The present invention has been completed by conceiving that the crystal may be grown by doping at a concentration higher than that, particularly 1 × 10 ¹⁷ atoms / cc or higher.

That is, the method for producing a silicon single crystal of the present invention is a method for producing a silicon single crystal by the Czochralski method. When growing a single crystal, boron and carbon are combined at a concentration of 1 × in the single crystal. Doping is performed so as to be in a range of 10 ¹⁷ atoms / cc or more, and a single crystal having an entire N region and / or I region is grown.

In addition, it is preferable to dope boron and carbon so that the concentration in the single crystal is in the range of 1 × 10 ²⁰ atoms / cc or less, and within this range, the single crystal with good quality can be stabilized. In addition, it is possible to sufficiently suppress the occurrence of problems such as long-time heat treatment, autodoping, and deterioration of device characteristics.

In this way, when growing the single crystal, boron and carbon are doped so that the concentration in the single crystal is in the range of 1 × 10 ¹⁷ atoms / cc or more in total, so that the V region and I The range of the V / G value that becomes the N region existing outside the OSF ring in the middle of the region can be greatly and reliably expanded. That is, since the manufacturing margin when manufacturing a single crystal in the N region is greatly expanded, it is relatively easy to grow a single crystal in the N region (a mixture of the N region and the I region, or the I region as necessary) The yield and productivity of the single crystal can be significantly improved.
Further, by doping boron and carbon together, the respective concentrations can be reduced, especially halved, so that boron and carbon can be reduced to a desired concentration or less, heat treatment for a long time, auto-doping, device It is also possible to sufficiently suppress problems such as deterioration of characteristics.

  On the other hand, boron is a substance that determines the resistivity, which is a basic property of semiconductors, and when doped with a high concentration of boron as described above, the resistivity decreases. However, in practice, there are cases where it is desired to manufacture a wafer in which the quality such as resistivity is controlled to a desired quality by reducing the boron concentration in the vicinity of the silicon surface as the device active layer. In such a case, a wafer having a desired quality can be manufactured by fabricating a wafer doped with high-concentration boron as described above, and then annealing at a high temperature to fly off the surface boron.

That is, in the method for producing a silicon wafer of the present invention, after the silicon single crystal produced by the method of the present invention is processed into a silicon wafer, heat treatment is performed at a temperature higher than 1000 ° C. The concentration is adjusted to be in a range of 1 × 10 ¹⁶ atoms / cc or less.

  In addition, since it is necessary to perform the heat processing after processing a silicon single crystal into a silicon wafer at a temperature below the melting point of silicon, it is preferable to carry out at a temperature of 1420 ° C. or less.

Thus, after processing a silicon single crystal doped with high-concentration boron into a silicon wafer, heat treatment is performed at a temperature higher than 1000 ° C., so that the boron concentration on the surface of the silicon wafer is 1 × 10 ¹⁶ atoms / cc. It can adjust so that it may become the following ranges, and it can make desired quality, such as a resistivity of a silicon wafer, by this.
On the other hand, when carbon is doped into a silicon single crystal at a very high concentration, there is a risk that the breakdown voltage characteristics and the like of an oxide film formed on a wafer manufactured from the silicon single crystal may be reduced. Since the carbon concentration on the silicon surface can be reduced by applying the heat treatment to the wafer, the heat treatment is preferably performed also from this viewpoint. Furthermore, the wafer of the present invention has an advantage that the gettering ability of the wafer is very high because boron and carbon are present in a high concentration in the bulk portion.

  The method for producing a silicon wafer according to the present invention is particularly effective for producing a silicon wafer having a large diameter of 200 mm or more, which has recently been required to have a higher quality and lower cost.

Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples.
(Example 1)
The single crystal manufacturing apparatus 1 shown in FIG. 1 is equipped with a quartz crucible 7 having a diameter of 32 inches (about 800 mm), and a high-purity carbon powder for carbon doping is sandwiched between flat portions of a silicon polycrystal lump. A quartz crucible 7 was filled together with the polycrystalline raw material, and a boron element for boron doping was further introduced. At this time, the concentration of boron and carbon in the silicon single crystal is added to be about 1 × 10 ¹⁹ atoms / cc in total (5 × 10 ¹⁸ atoms / cc each alone), melted, and the raw material melt It was set to 6. Then, by the Czochralski method (CZ method), the growth rate of the silicon single crystal 4 having a diameter of the straight body portion of 12 inches (about 300 mm) and the length of the straight body portion of about 140 cm is increased from 1.1 mm / min. Growing while gradually decreasing to 0.3 mm / min.
When growing the silicon single crystal 4, a horizontal magnetic field having a central magnetic field strength of 3000 G was applied.

Next, the single crystal grown as described above was vertically divided to prepare a sample, and the following crystal defect distribution was investigated.
(1) Inspection of FPD (V region) and LSEPD (I region) 1) After inspecting the sample for inspection for 30 minutes without stirring, the sample was observed with a microscope to confirm crystal defects. It was.
2) When the resistivity of the sample is low, stain may occur after selective etching. Therefore, in addition to confirming the crystal defects by the above-mentioned seco etching, the crystal defects using the light liquid were also confirmed.
(2) Inspection of OSF The sample for inspection was subjected to a heat treatment at 1150 ° C. for 100 minutes in a wet oxygen atmosphere, and then the presence of OSF was confirmed by observing the sample with a microscope.

The examination result of this crystal defect distribution is shown in FIG.
As is clear from FIG. 3 (a), no crystal defects were observed from the investigated straight body portion, and it was confirmed that the crystals were defect-free.

Next, a silicon single crystal was grown in the same manner as described above except that it was grown while maintaining the growth rate when growing the straight body of the single crystal at approximately 1.0 mm / min.
A wafer was cut out from each portion of the obtained single crystal in the growth axis direction of 20 cm, and surface grinding and polishing were performed to prepare a sample for inspection. Using this sample, FPD (V region), LSEPD (I region), and OSF were inspected by the same method as described above.

The inspection result of this crystal defect is shown in FIG.
As is clear from FIG. 2A, no crystal defects were observed in any of the investigated samples, and it was confirmed that the crystals were defect-free.

Furthermore, a wafer was cut out from the silicon single crystal grown while maintaining the growth rate at approximately 1.0 mm / min, and the cut wafer was annealed at 1200 ° C. for 4 hours in a hydrogen atmosphere. As a result, the boron concentration decreased from a depth of about 5 μm, the surface could be adjusted to a desired concentration of about 1 × 10 ¹⁵ atoms / cc, and a desired resistivity could be obtained.

(Comparative Example 1)
When the raw material melt 6 is prepared, the boron element for boron doping and the high-purity carbon powder for carbon doping have a concentration in the silicon single crystal of about 1 × 10 ¹⁵ atoms / cc (5 × 10 5 each independently) ¹⁴ single atoms / cc), except that the silicon single crystal 4 was grown gradually from 1.1 mm / min to 0.3 mm / min by the same method as in Example 1. Raised while reducing.

Next, the single crystal grown as described above is vertically divided to prepare a sample, and the crystal defect distribution of FPD (V region), LSEPD (I region), and OSF is investigated by the same method as in Example 1. went. The examination result of the crystal defect distribution is shown in FIG.
As is clear from FIG. 3B, FPD (V region) was observed at the higher growth rate, OSF was observed near the boundary of the V region, and LSEPD (I region) was observed at the slower growth rate.

Next, a silicon single crystal was grown in the same manner as described above except that it was grown while maintaining the growth rate when growing the straight body of the single crystal at approximately 1.0 mm / min.
A wafer having a thickness of about 2 mm was cut out from each portion of the obtained single crystal in a growth axis direction of 20 cm, and surface grinding and polishing were performed to prepare a sample for inspection. Using this sample, FPD (V region), LSEPD (I region), and OSF were inspected by the same method as described above.

The inspection result of this crystal defect is shown in FIG.
As apparent from FIG. 2 (b), FPD is observed from any of the samples examined, and at a growth rate of approximately 1.0 mm / min, a crystal in the V region is produced to produce a defect-free crystal. It was confirmed that it was not possible.

The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
For example, in the first embodiment, the case where a silicon single crystal having only an N region is manufactured has been described. However, if necessary, a silicon single crystal in which an N region and an I region are mixed, or a silicon single crystal having only an I region is formed. It is also possible to use the method of the invention when pulling up.

It is a schematic sectional drawing which shows an example of the single crystal manufacturing apparatus used by this invention. It is a schematic diagram showing a crystal defect distribution of a single crystal grown while maintaining a growth rate of approximately 1.0 mm / min. (A) Example 1, (b) Comparative Example 1. It is a schematic sectional drawing which shows the crystal defect distribution of the single crystal obtained by growing while gradually reducing a growth rate from 1.1 mm / min to 0.3 mm / min. (A) Example 1, (b) Comparative Example 1. It is a schematic sectional drawing which shows distribution of a crystal defect area | region. It is a graph which shows the relationship between the density | concentration (atoms / cc) which combined boron and carbon, and the V / G value (mm < ² > / degreeC * min) from which OSF lose | disappears in a crystal center.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Single crystal manufacturing apparatus, 2 ... Main chamber, 3 ... Pulling chamber,
4 ... single crystal, 5 ... wire, 6 ... raw material melt, 7 ... quartz crucible,
8 ... graphite crucible, 9 ... shaft, 10 ... graphite heater, 11 ... heat insulation member,
12 ... Gas rectifier cylinder, 13 ... Heat shield member, 14 ... Gas inlet, 15 ... Gas outlet,
16 ... Seed holder, 17 ... Seed crystal.

Claims (3)

In the method for producing a silicon single crystal by the Czochralski method, when growing the single crystal, boron and carbon are doped so that the concentration in the single crystal is in the range of 1 × 10 ¹⁷ atoms / cc or more. A method for producing a silicon single crystal, comprising growing a single crystal having an N region and / or an I region over the entire crystal surface. The silicon single crystal manufactured by the method according to claim 1 is processed into a silicon wafer, and then heat treatment is performed at a temperature higher than 1000 ° C., so that the boron concentration on the surface of the silicon wafer is 1 × 10 ¹⁶ atoms / cc. A method for producing a silicon wafer, which is adjusted to be in the following range.   The method for manufacturing a silicon wafer according to claim 2, wherein a diameter of the silicon wafer to be manufactured is 200 mm or more.

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