JP2005159212A - Electrode connection method for display panel, and plasma display manufacturing method using the same - Google Patents
Electrode connection method for display panel, and plasma display manufacturing method using the same Download PDFInfo
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Abstract
Description
本発明は、ディスプレイパネルの製造方法に関し、特にプラズマディスプレイ（ＰＤＰ）パネルとモジュールパッケージとを接続するフレキシブルプリント基板（ＦＰＣ）及びテープキャリアパッケージ（ＴＣＰ）とを加熱圧着によって接続するディスプレイパネルの電極接続方法およびプラズマディスプレイの製造方法に関するものである。 The present invention relates to a method for manufacturing a display panel, and more particularly, a display panel electrode connection for connecting a plasma display (PDP) panel and a module package with a flexible printed circuit board (FPC) and a tape carrier package (TCP) by thermocompression bonding. The present invention relates to a method and a method for manufacturing a plasma display.
大画面フラットディスプレイとしてＰＤＰが有力視されている。ＰＤＰパネル端部の構成は図１に示すように、ガラス前面基板３とガラス背面基板２とからなる。
PDP is regarded as a promising large screen flat display. As shown in FIG. 1, the PDP panel end portion includes a glass
ＰＤＰの配線材料としては主に銀電極あるいはパラジウムを添加した銀電極が用いられる。またＰＤＰ端子と接続する回路基板としてはＦＰＣやＴＣＰが用いられる。 As a wiring material of PDP, a silver electrode or a silver electrode added with palladium is mainly used. As a circuit board connected to the PDP terminal, FPC or TCP is used.
このＦＰＣにはドライバＩＣ、チップコンデンサが搭載されている場合もある。ＰＤＰ端子とＦＰＣ、ＴＣＰとの接続は、一般に異方性導電フィルム（以下、ＡＣＦと略す）で接続される。ＡＣＦは未硬化のエポキシ樹脂に導電粒子を分散させたフィルムである。このＡＣＦを接続対象部材間に介在させ、加熱圧着すると、加圧により部材の接続端子は導電粒子で電気的に接続されるが、横方向には圧力がかからないため隣接端子間の絶縁性は確保される。 In some cases, a driver IC and a chip capacitor are mounted on the FPC. The connection between the PDP terminal and the FPC and TCP is generally connected by an anisotropic conductive film (hereinafter abbreviated as ACF). ACF is a film in which conductive particles are dispersed in an uncured epoxy resin. When this ACF is interposed between the members to be connected and thermocompression bonded, the connecting terminals of the members are electrically connected by conductive particles by pressurization, but since no pressure is applied in the lateral direction, insulation between adjacent terminals is ensured. Is done.
従来より加熱圧着の際には接続部を構成している各種材料を熱破壊あるいは機械的衝撃から保護するために加熱ヘッドに緩衝材（クッション材）を供給し加熱ヘッドが直接ＦＰＣやＴＣＰに接触しないようになっている（例えば、特許文献１）。 Conventionally, in the case of thermocompression bonding, a buffer material (cushion material) is supplied to the heating head in order to protect the various materials constituting the connection part from thermal destruction or mechanical shock, and the heating head directly contacts the FPC or TCP. (For example, patent document 1).
しかし、ガラス基板の厚さのばらつきによるプラズマディスプレイの接続端子間の高さのばらつきがＡＣＦに含まれる導電粒子の径に比べて非常に大きいためプラズマディスプレイパネルとＦＰＣまたはＴＣＰとの間で接続不良を生じるおそれがある。すなわちＰＤＰ接続端子の高さが低くＰＤＰ接続端子の表面とＦＰＣまたはＴＣＰの接続表面との隙間がＡＣＦに含まれる導電粒子の径より大きく、さらに熱圧着の際に緩衝材がそのばらつきを吸収できない場合上記のような接続不良が生じる。 However, since the variation in the height between the connection terminals of the plasma display due to the variation in the thickness of the glass substrate is very large compared to the diameter of the conductive particles contained in the ACF, the connection between the plasma display panel and the FPC or TCP is poor. May occur. That is, the height of the PDP connection terminal is low and the gap between the surface of the PDP connection terminal and the connection surface of the FPC or TCP is larger than the diameter of the conductive particles contained in the ACF, and the buffer material cannot absorb the variation during thermocompression bonding. In this case, the above-mentioned connection failure occurs.
またＡＣＦが接続端子間の隙間を完全に埋めないと界面に気泡を含む原因となる。この場合局所的に湿度が増大しイオンマイグレーションが発生する原因にもなりうる。ここでイオンマイグレーションとは、電気化学反応によって電極金属がイオン溶解して電極間に析出する現象のことである。
上記従来技術の問題点に鑑み、本発明は加熱圧着の際に発生する接続端子間の接続不良を防止することをその課題とする。 In view of the above problems of the prior art, an object of the present invention is to prevent a connection failure between connection terminals that occurs during thermocompression bonding.
上記課題を解決するため、本発明は以下の構成からなる。すなわち、ディスプレイパネルのパネル電極端子と、フレキシブルプリント基板もしくはテープキャリアパッケージとを、加熱ヘッドにより異方性導電フィルムを介して接続する電極の接続方法において、加熱ヘッドとフレキシブルプリント基板もしくはテープキャリアパッケージとの間に熱変形温度の異なる２種以上のシートを緩衝材として用いることを特徴とするディスプレイパネルの電極接続方法およびプラズマディスプレイの製造方法である。 In order to solve the above problems, the present invention has the following configuration. That is, in the electrode connection method of connecting a panel electrode terminal of a display panel and a flexible printed circuit board or a tape carrier package via an anisotropic conductive film by a heating head, the heating head and the flexible printed circuit board or the tape carrier package A display panel electrode connecting method and a plasma display manufacturing method, wherein two or more kinds of sheets having different heat deformation temperatures are used as cushioning materials.
本発明によれば、接続端子間の高さのばらつきも吸収し、各素子や端子に均一に加熱、加圧が行われ、確実に接続することができる。 According to the present invention, variations in height between connection terminals are also absorbed, and heating and pressurization are uniformly performed on each element and terminal, so that a reliable connection can be achieved.
本発明の実施の形態について、図面を参照して説明する。本発明の特徴はディスプレイパネルの電極端子とＦＰＣまたはＴＣＰとを加熱ヘッドで押し付けて接続する際に、加熱ヘッドの下に熱変形温度の異なる２層以上の緩衝材を介在させ、この２層の緩衝材を用いてプラズマディスプレイパネルとＦＰＣまたはＴＣＰとを加熱圧着する点にある。 Embodiments of the present invention will be described with reference to the drawings. The feature of the present invention is that, when the electrode terminal of the display panel and FPC or TCP are connected by pressing with a heating head, two or more layers of cushioning materials having different thermal deformation temperatures are interposed under the heating head, The plasma display panel and the FPC or TCP are heat-pressed using a buffer material.
なお、熱変形温度 とは、ＡＳＴＭ Ｄ６４８の規格によるものであり、フィルム組成物ペレットを射出成形機でＡＳＴＭ Ｄ６４８に基づく熱変形温度 測定試片に成形し、８０℃で２４時間アニールした後、低荷重４．６ｋｇ／ｃｍ2の条件で測定した温度である。 The heat distortion temperature is based on the standard of ASTM D648. The film composition pellet is formed into a heat distortion temperature measurement specimen based on ASTM D648 with an injection molding machine and annealed at 80 ° C. for 24 hours. This is a temperature measured under a load of 4.6 kg / cm 2 .
次に、プラズマディスプレイ について説明する。以下に、最も一般的なＡＣ型プラズマディスプレイを例に取り、その基本構造を説明するが、必ずしもこの構造には限定されない。なお、ＡＣ型とは、電源方式が交流であり、構造的には直流であるＤＣ型と比較して、誘電体層を有する点等が相違する。 Next, a plasma display will be described. The basic structure will be described below by taking the most common AC type plasma display as an example. However, the structure is not necessarily limited to this structure. Note that the AC type is different from the DC type in which the power supply system is alternating current and structurally direct current in that it has a dielectric layer.
プラズマディスプレイの構成について簡単に説明する。
プラズマディスプレイは、前面板および／または背面板に形成された蛍光体層が内部空間内に面しているように、該前面板と該背面板を封着してなる部材において、前記内部空間内に放電ガスが封入されてなるものである。前面板には表示面側の基板であり表示用放電のための透明電極（サスティン電極、スキャン電極）が形成されている。より低抵抗な電極を形成する目的で透明電極の背面側にバス電極を形成しても良い。ＡＣ型プラズマディスプレイ の場合、電極の透明誘電体およびその保護膜としてＭｇＯ薄膜が形成される場合が多い。背面板には、表示させるセルをアドレス選択するための電極（アドレス電極）が形成されている。アドレス電極は材質がＡｇ、Ｃｒ／Ｃｕ／Ｃｒ等で構成されていてその厚みは２〜１０μ程度、幅は５０〜１５０μｍ程度である。
The configuration of the plasma display will be briefly described.
The plasma display is a member formed by sealing the front plate and the rear plate so that the phosphor layer formed on the front plate and / or the rear plate faces the inner space. The discharge gas is sealed in the tube. The front plate is a substrate on the display surface side, and a transparent electrode (sustain electrode, scan electrode) for display discharge is formed. A bus electrode may be formed on the back side of the transparent electrode for the purpose of forming a lower resistance electrode. In the case of an AC type plasma display, an MgO thin film is often formed as a transparent dielectric of an electrode and its protective film. On the back plate, electrodes (address electrodes) for selecting cells to be displayed are formed. The address electrode is made of Ag, Cr / Cu / Cr or the like, and has a thickness of about 2 to 10 μm and a width of about 50 to 150 μm.
また放電の広がりを一定領域に抑え表示を規定内のセル内で行わせかつ均一な放電空間を確保するために隔壁（リブともいう）が設けられる。さらに隔壁上の所定位置に赤、緑、青の各色に発光する蛍光体層が形成される。 In addition, barrier ribs (also referred to as ribs) are provided in order to suppress the spread of the discharge to a certain area and to perform display in the cells within the specified range and to ensure a uniform discharge space. Furthermore, phosphor layers that emit light of red, green, and blue colors are formed at predetermined positions on the barrier ribs.
上記した前面板と背面板をマトリクス駆動が可能になるように合わせて、封着した後、排気し、Ｈｅ、Ｎｅ、Ｘｅの混合ガスを封入し、駆動回路を実装してプラズマディスプレイパネルを作製する。隣り合う放電電極の間にパルス状の交流電圧を印加するとガス放電が生じ、プラズマが形成される。ここで生じた紫外線が蛍光体を励起して可視光を発光し前面板を通して表示発光を得る。 The above front plate and back plate are aligned so that matrix driving is possible, sealed, then evacuated, filled with a mixed gas of He, Ne, and Xe, and mounted with a drive circuit to produce a plasma display panel To do. When a pulsed AC voltage is applied between adjacent discharge electrodes, gas discharge occurs and plasma is formed. The ultraviolet rays generated here excite the phosphor to emit visible light, and display emission is obtained through the front plate.
次に、電極の接続に用いる各構成について説明する。
異方性導電フィルム（ＡＣＦ）はＡＣＦは未硬化のエポキシ樹脂等のバインダーに金メッキされたニッケル粒子等の導電粒子を分散させたフィルムである。
Next, each structure used for electrode connection will be described.
An anisotropic conductive film (ACF) is a film in which conductive particles such as nickel particles plated with gold on a binder such as an uncured epoxy resin are dispersed.
ＦＰＣの構成はポリイミド等の絶縁膜と電極端子の形成された金属膜からなる。金属膜には通常銅が用いられる。ポリイミドフィルム等の絶縁膜に接着剤層を介して金属膜と張り合わされた３層ＦＰＣと接着剤層のない２層ＦＰＣがあるがいずれにも本発明は適用できる。 The configuration of the FPC is made of an insulating film such as polyimide and a metal film on which electrode terminals are formed. Copper is usually used for the metal film. Although there are a three-layer FPC in which an insulating film such as a polyimide film is bonded to a metal film via an adhesive layer and a two-layer FPC without an adhesive layer, the present invention can be applied to both.
ＴＣＰの構成はポリイミドフィルム等の絶縁膜に接着剤層を介してと電極端子の形成された金属膜からなる。 The structure of TCP consists of a metal film having an electrode terminal formed on an insulating film such as a polyimide film through an adhesive layer.
図１は、本発明の実施の形態におけるプラズマディスプレイの電極接続部分の構成を説明する概略断面図である。図１に示すように、本実施の形態においてプラズマディスプレイを構成するガラス前面基板３とガラス背面基板２が貼り合わされた構造になっておりガラス背面基板の表面には電極４が形成されている。また、ガラス背面基板２にガラス前面基板３から張り出す部分があり、この張り出し部分表面の電極は接続端子となる。一方、ＩＣが搭載されたポリイミドフィルム等からなるＦＰＣ６にも電極端子８が形成されておりプラズマディスプレイパネル１の接続端子４とＦＰＣ６の接続端子８とを異方性導電フィルム（ＡＣＦ）５を介して加熱圧着することによってプラズマディスプレイパネル１とＦＰＣ６とを電気的に接続した構造となっている。
FIG. 1 is a schematic cross-sectional view illustrating a configuration of an electrode connection portion of a plasma display according to an embodiment of the present invention. As shown in FIG. 1, a glass
図２（ａ）はＰＤＰパネルに電極端子が複数個形成されている様子を示した平面図である。図２（ｂ）はＦＰＣの端部に形成されたＦＰＣ電極端子の部分を示した平面図である。これらの各端子を互いに接続することにより、プラズマディスプレイの電極接続が完了する。 FIG. 2A is a plan view showing a state in which a plurality of electrode terminals are formed on the PDP panel. FIG. 2B is a plan view showing a portion of the FPC electrode terminal formed at the end of the FPC. By connecting these terminals to each other, the electrode connection of the plasma display is completed.
接続方法は次の通りである。まずプラズマディスプレイパネル１のガラス背面基板２上に形成された接続端子４の上にＡＣＦ５を通常温度５０〜１００℃、圧力０．１〜１Ｐａ、時間１〜１０秒の条件で仮圧着する。ＡＣＦ上部に貼り付けてある保護テープを剥離した後、ＡＣＦ５上にＦＰＣ６の電極端子部分８を位置合わせして置き、その上方から２００〜２３０℃に加温された加熱ヘッド１１を降下させ、プラズマディスプレイパネル１の接続端子４とＦＰＣ６の接続端子８とをＡＣＦ５を介して加熱圧着する。圧着は通常１〜５ＭＰａの圧力で行われる。圧着時間は５〜２０秒が好ましい。
The connection method is as follows. First, the
このプラズマディスプレイパネル１とＦＰＣ６との熱圧着の際には、接続部を構成している各種材料を熱破壊あるいは機械的衝撃から保護するために加熱ヘッド１１の下に緩衝材９，１０を挟み込み、加熱ヘッド１１が直接ＦＰＣ６に接触しないようにしている。
この緩衝材としては、熱変形温度の異なる２種またはそれ以上を使用することが必要である。熱変形温度の高い緩衝材は加熱ヘッド１１に接触する側の上層シート９として、熱変形温度の低い緩衝材はＦＰＣ６に接触する側の下層シート１０として使用される。
When the
As this cushioning material, it is necessary to use two or more kinds having different heat distortion temperatures. The buffer material having a high heat deformation temperature is used as the
ここで、熱変形温度が低い緩衝材の熱変形温度は１００〜２００℃であることが好ましい。熱変形温度が１００〜２００℃とすることにより熱圧着時の軟化で接続端子間の高さのばらつきを吸収して均一に圧力が伝達される。さらに好ましくは１５０〜１９０℃が良い。しかし熱変形温度が１００〜２００℃の緩衝材の単独使用では機械的強度が低く、さらに加熱ヘッドに融着する問題がある。 Here, it is preferable that the heat deformation temperature of the buffer material having a low heat deformation temperature is 100 to 200 ° C. By setting the thermal deformation temperature to 100 to 200 ° C., the softness during thermocompression bonding absorbs the variation in height between the connection terminals, and pressure is transmitted uniformly. More preferably, 150-190 degreeC is good. However, when the buffer material having a heat deformation temperature of 100 to 200 ° C. is used alone, the mechanical strength is low, and there is a problem that it is fused to the heating head.
熱変形温度が１００〜２００℃の緩衝材としてはナイロン６（熱変形温度１５０℃）、ナイロン１２（熱変形温度１４０℃）、 ポリアセタール（熱変形温度１８０℃）、ポリカーボネート （熱変形温度１８５℃）、、ポリスルホン（熱変形温度１８０℃）、ポリアリルエーテル（熱変形温度１６０℃）、ポリアリレート（熱変形温度１７０℃）等が挙げられる。中でもポリカーボネートが特に好ましく用いられる。 Nylon 6 (heat deformation temperature 150 ° C.), nylon 12 (heat deformation temperature 140 ° C.), polyacetal (heat deformation temperature 180 ° C.), polycarbonate (heat deformation temperature 185 ° C.) as buffer materials having a heat deformation temperature of 100 to 200 ° C. And polysulfone (thermal deformation temperature 180 ° C.), polyallyl ether (thermal deformation temperature 160 ° C.), polyarylate (thermal deformation temperature 170 ° C.) and the like. Of these, polycarbonate is particularly preferably used.
一方、熱変形温度が高い緩衝材の熱変形温度は２００℃よりも高いことが好ましい。熱変形温度を２００℃よりも高くすることにより機械的強度を保つことができ、融着の問題もない。好ましくは、２００℃よりも高く３００℃以下が好ましい。しかし単独使用では材質が硬く変形しにくいため接続端子間の高さのばらつきを吸収することができない。 On the other hand, it is preferable that the heat deformation temperature of the buffer material having a high heat deformation temperature is higher than 200 ° C. By making the heat distortion temperature higher than 200 ° C., the mechanical strength can be maintained and there is no problem of fusion. Preferably, it is higher than 200 ° C. and 300 ° C. or lower. However, when used alone, the material is hard and difficult to be deformed, so it is impossible to absorb the variation in height between the connection terminals.
熱変形温度が２００℃以上の緩衝材としては四ふっ化エチレン（熱変形温度２６０℃）、ナイロン６６（熱変形温度２１０℃）、ＧＦ強化ポリエチレンテレフタレート、ポリプロピレンサルファイド、ポリイミド等が挙げられる。中でも、が特に好ましく用いられる。 Examples of the buffer material having a heat deformation temperature of 200 ° C. or higher include ethylene tetrafluoride (heat deformation temperature 260 ° C.), nylon 66 (heat deformation temperature 210 ° C.), GF reinforced polyethylene terephthalate, polypropylene sulfide, polyimide, and the like. Among these, is particularly preferably used.
緩衝材として、高熱変形温度のものと低熱変形温度のものを組み合わせて初めて、接続端子間の高さのばらつきを吸収して均一に圧力が伝達されかつ機械的な強度も得られ融着もなく確実な接続ができるようになる。 Only when a material with a high heat deformation temperature and a material with a low heat deformation temperature are combined as a cushioning material, the pressure variation is uniformly transmitted and the mechanical strength is obtained without any fusion. A secure connection can be made.
以下に、本発明を実施例により具体的に説明する。ただし、本発明はこれに限定されるものではない
＜熱変形温度測定方法＞
ＡＳＴＭ Ｄ６４８の規格に準拠した。フィルム組成物ペレットを射出成形機でＡＳＴＭ Ｄ６４８に基づく熱変形温度 測定試片に成形し、８０℃で２４時間アニールした後、低荷重４．６ｋｇ／ｃｍ2の条件で変形する温度を測定した。
Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to this <Method for measuring heat distortion temperature>
Conforms to the standard of ASTM D648. The film composition pellets were molded into a specimen for measuring heat distortion temperature based on ASTM D648 using an injection molding machine, annealed at 80 ° C. for 24 hours, and then the temperature at which the film composition was deformed under conditions of a low load of 4.6 kg / cm 2 was measured.
実施例１
プラズマディスプレイを以下の手順にて作製した。まず、旭硝子社製“ＰＤ−２００”ガラス基板（４２インチ）上に、感光性銀ペーストを用いたフォトリソグラフィー法によりアドレス電極パターンを形成した。電極厚みは３μｍ、電極端子は電極幅１２０μｍ、ピッチ２４０μｍとした。次いで、アドレス電極が形成されたガラス基板上に誘電体層をスクリーン印刷法により２０μｍの厚みで形成した。しかる後、感光性ペーストを用いたフォトリソグラフィー法により厚み１００μｍの隔壁を形成した。次に、蛍光体層をディスペンサー法にて厚さ２０μｍに形成し、焼成して背面板を作製した。
Example 1
A plasma display was produced by the following procedure. First, an address electrode pattern was formed on a “PD-200” glass substrate (42 inches) manufactured by Asahi Glass Co., Ltd. by a photolithography method using a photosensitive silver paste. The electrode thickness was 3 μm, the electrode terminals were electrode width 120 μm, and pitch 240 μm. Next, a dielectric layer having a thickness of 20 μm was formed on the glass substrate on which the address electrodes were formed by screen printing. Thereafter, a partition wall having a thickness of 100 μm was formed by a photolithography method using a photosensitive paste. Next, the phosphor layer was formed to a thickness of 20 μm by a dispenser method and baked to produce a back plate.
次に、“ＰＤ−２００”ガラス基板上に、フォトエッチング方によりＩＴＯ電極を形成した後、感光性銀ペーストを用いたフォトリソグラフィー法によりバス電極パターンを形成した。しかる後、透明誘電体層をスクリーン印刷法により３０μｍの厚みで形成した。さらに、５００ｎｍ厚のＭｇＯ膜を電子ビーム蒸着法により形成して、放電のための複数の電極を形成した前面板を得た。 Next, an ITO electrode was formed on a “PD-200” glass substrate by a photoetching method, and then a bus electrode pattern was formed by a photolithography method using a photosensitive silver paste. Thereafter, a transparent dielectric layer was formed to a thickness of 30 μm by screen printing. Furthermore, a 500 nm-thick MgO film was formed by electron beam evaporation to obtain a front plate on which a plurality of electrodes for discharge were formed.
次に、前面板及び背面板用ガラス基板にシール剤となる低融点ガラスペーストを設け、所定の配置になるよう位置合わせして対向配置し、４５０℃、３０分間処理しガラス基板を封止した。その後、表示領域内部の排気及びＮｅ９５％、Ｘｅ５％の混合ガスの封入を行ってプラズマディスプレイパネルを完成させた。
Next, a low-melting glass paste serving as a sealant is provided on the glass substrate for the front plate and the back plate, aligned to face each other in a predetermined arrangement, and processed at 450 ° C. for 30 minutes to seal the glass substrate. . Thereafter, the plasma display panel was completed by exhausting the inside of the display region and sealing with a mixed gas of Ne 95% and
その後、プラズマディスプレイパネルのガラス背面基板上に形成された接続端子（電極）の上にＡＣＦを温度６０℃、圧力０．５Ｐａ、時間２秒の条件で仮圧着した。 Then, ACF was temporarily pressure-bonded on the connection terminals (electrodes) formed on the glass back substrate of the plasma display panel under the conditions of a temperature of 60 ° C., a pressure of 0.5 Pa, and a time of 2 seconds.
ＡＣＦ上部に貼り付けてある保護テープを剥離した後、ＡＣＦ上にＦＰＣの電極端子部分を位置合わせして置き、その上方から２００℃に加温された加熱ヘッドを降下させ、プラズマディスプレイパネルの接続端子とＦＰＣの接続端子とをＡＣＦを介して３ＭＰａの圧力で１０秒間加熱圧着した。 After peeling off the protective tape affixed to the top of the ACF, the electrode terminal part of the FPC is aligned and placed on the ACF, and the heating head heated to 200 ° C. is lowered from above to connect the plasma display panel. The terminal and the connecting terminal of the FPC were thermocompression bonded via ACF at a pressure of 3 MPa for 10 seconds.
ＦＰＣはポリイミド層厚み２５μｍ、銅電極厚み１８μｍの二層ＦＰＣを用いた。電極端子は電極幅１２０μｍ、ピッチ２４０μｍとした。ＡＣＦは厚み３５μｍ、ＡＣＦは導電粒子径８μｍ、導電粒子は金メッキニッケルのものを用いた。 As the FPC, a two-layer FPC having a polyimide layer thickness of 25 μm and a copper electrode thickness of 18 μm was used. The electrode terminals had an electrode width of 120 μm and a pitch of 240 μm. ACF had a thickness of 35 μm, ACF had a conductive particle diameter of 8 μm, and the conductive particles were gold-plated nickel.
プラズマディスプレイへのＦＰＣ圧着には株式会社システム開発製のＣＦＶ−１型ＰＤＰ用ＦＰＣ貼付け装置を使用した。 An FPC pasting apparatus for CFV-1 type PDP manufactured by System Development Co., Ltd. was used for FPC crimping to the plasma display.
この緩衝材としては加熱ヘッドに接触する側の熱変形温度の高い上層シートとしてニチアス（株）製の厚み３０μｍの四フッ化エチレンシート（熱変形温度２６０℃）を使用した。ＦＰＣに接触する側の熱変形温度の低い下層シートとして三菱エンジニアリングプラスチックス（株）製ポリカーボネート樹脂シート（商品名：ユーピロンシート、厚み：５０μｍ、熱変形温度１８０℃）を使用した。加熱圧着後端子の接続状態を１０倍の顕微鏡を用いて観察した。 As this cushioning material, a 30 μm thick ethylene tetrafluoride sheet (heat distortion temperature 260 ° C.) manufactured by Nichias Co., Ltd. was used as an upper layer sheet having a high heat deformation temperature on the side in contact with the heating head. A polycarbonate resin sheet (trade name: Iupilon sheet, thickness: 50 μm, heat distortion temperature 180 ° C.) manufactured by Mitsubishi Engineering Plastics Co., Ltd. was used as a lower layer sheet having a low heat distortion temperature on the side in contact with the FPC. The connection state of the terminal after thermocompression bonding was observed using a 10 × microscope.
本構成、接続方法において接続端子間の高さのばらつきも吸収し、良好な接続状態を得ることができた。また、ＰＤＰパネルを点灯させて、表示を確認したところ、接続不良に基づく点灯不良は観察されなかった。 In this configuration and connection method, variations in height between connection terminals were absorbed, and a good connection state could be obtained. Further, when the display was confirmed by lighting the PDP panel, no lighting failure based on poor connection was observed.
実施例２
ＦＰＣの代わりにＴＣＰを使用した以外は実施例１と同一の方法でプラズマディスプレイを製造し、加熱圧着後端子の接続状態を観察した。
Example 2
A plasma display was manufactured in the same manner as in Example 1 except that TCP was used instead of FPC, and the connection state of the terminals after thermocompression bonding was observed.
ＴＣＰはポリイミド層厚み７５μｍ、銅電極厚み２５μｍ、接着剤厚み１２μｍのものを用いた。電極端子は電極幅１２０μｍ、ピッチ２４０μｍとした。 TCP having a polyimide layer thickness of 75 μm, a copper electrode thickness of 25 μm, and an adhesive thickness of 12 μm was used. The electrode terminals had an electrode width of 120 μm and a pitch of 240 μm.
本構成、接続方法において接続端子間の高さのばらつきも吸収し、良好な接続状態を得ることができた。 In this configuration and connection method, variations in height between connection terminals were absorbed, and a good connection state could be obtained.
実施例３
緩衝材として熱変形温度の高い上層シートとしてニチアス（株）製の厚み３０μｍの四ふっ化エチレンシート（熱変形温度２６０℃）し、熱変形温度の低い下層シートとして東レ製ナイロン６６シート（熱変形温度２１０℃）を使用した以外は実施例１と同一の方法でプラズマディスプレイを製造した。本構成、接続方法において電極端子とＡＣＦの間にわずかに気泡が発生したが、ほぼ良好な接続状態を得ることができた。
Example 3
A 30 μm thick ethylene tetrafluoride sheet (heat distortion temperature 260 ° C.) manufactured by Nichias Co., Ltd. as an upper layer sheet having a high heat deformation temperature as a cushioning material, and a Toray nylon 66 sheet (heat deformation as a lower sheet having a low heat deformation temperature A plasma display was manufactured in the same manner as in Example 1 except that the temperature was 210 ° C. In the present configuration and connection method, a slight amount of bubbles was generated between the electrode terminal and the ACF, but a substantially good connection state could be obtained.
比較例１
緩衝材として四ふっ化フッ化エチレンシートのみを使用した以外は実施例１と同一の方法でプラズマディスプレイを製造した。本構成、接続方法において電極端子とＡＣＦの間に気泡が発生し、良好な接続状態を得ることができなかった。
Comparative Example 1
A plasma display was manufactured in the same manner as in Example 1 except that only the tetrafluorofluoroethylene sheet was used as the buffer material. In this configuration and connection method, bubbles were generated between the electrode terminal and the ACF, and a good connection state could not be obtained.
比較例２
緩衝材としてポリカーボネート樹脂シートのみを使用した以外は実施例１と同一の方法でプラズマディスプレイを製造した。本構成、接続方法においてポリカーボネート樹脂シートが加熱ヘッドに融着して良好な接続状態を得ることができなかった。
Comparative Example 2
A plasma display was produced in the same manner as in Example 1 except that only the polycarbonate resin sheet was used as the buffer material. In this configuration and connection method, the polycarbonate resin sheet was fused to the heating head, and a good connection state could not be obtained.
なお上述した実施形態ではプラズマディスプレイパネルとＦＰＣとの接続を例にとり説明したが、ＬＣＤ等他のディスプレイパネルにＦＰＣやＴＣＰを接続する場合にも本発明を適用できる。 In the above-described embodiment, the connection between the plasma display panel and the FPC has been described as an example. However, the present invention can also be applied to the case where the FPC or TCP is connected to another display panel such as an LCD.
１ ＰＤＰパネル
２ ガラス背面基板
３ ガラス前面基板
４ ＰＤＰ電極（接続端子）
５ ＡＣＦ（異方性導電フィルム）
６ ＦＰＣ
７ 絶縁フィルム
８ ＦＰＣ電極端子
９ 緩衝材（上層）
１０ 緩衝材（下層）
１１ 加熱ヘッド
１２ ガラス前面基板
１３ ＰＤＰ電極（接続端子）
１４ ガラス背面基板
１５ ＦＰＣ電極端子
１６ 絶縁フィルム
１７ ＦＰＣ
1
5 ACF (anisotropic conductive film)
6 FPC
7 Insulating
10 cushioning material (lower layer)
11
14 Glass back
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007133050A (en) * | 2005-11-09 | 2007-05-31 | Shimadzu Corp | Optical device |
| JP2007165571A (en) * | 2005-12-14 | 2007-06-28 | Matsushita Electric Ind Co Ltd | Electronic component mounting equipment |
| JP2008193023A (en) * | 2007-02-08 | 2008-08-21 | Sekisui Chem Co Ltd | Manufacturing method for semiconductor device, and semiconductor device manufacturing heat-resistant sheet |
| WO2020184329A1 (en) * | 2019-03-12 | 2020-09-17 | ソニーセミコンダクタソリューションズ株式会社 | Display device and electronic instrument |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007133050A (en) * | 2005-11-09 | 2007-05-31 | Shimadzu Corp | Optical device |
| JP2007165571A (en) * | 2005-12-14 | 2007-06-28 | Matsushita Electric Ind Co Ltd | Electronic component mounting equipment |
| JP2008193023A (en) * | 2007-02-08 | 2008-08-21 | Sekisui Chem Co Ltd | Manufacturing method for semiconductor device, and semiconductor device manufacturing heat-resistant sheet |
| WO2020184329A1 (en) * | 2019-03-12 | 2020-09-17 | ソニーセミコンダクタソリューションズ株式会社 | Display device and electronic instrument |
| CN113544761A (en) * | 2019-03-12 | 2021-10-22 | 索尼半导体解决方案公司 | Display devices and electronic equipment |
| CN113544761B (en) * | 2019-03-12 | 2023-10-10 | 索尼半导体解决方案公司 | Display devices and electronic equipment |
| US12356811B2 (en) | 2019-03-12 | 2025-07-08 | Sony Semiconductor Solutions Corporation | Display device and electronic device with heat absorption layer coupled to pad electrode layer |
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