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JP2005150508A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
JP2005150508A
JP2005150508A JP2003387844A JP2003387844A JP2005150508A JP 2005150508 A JP2005150508 A JP 2005150508A JP 2003387844 A JP2003387844 A JP 2003387844A JP 2003387844 A JP2003387844 A JP 2003387844A JP 2005150508 A JP2005150508 A JP 2005150508A
Authority
JP
Japan
Prior art keywords
bonding
bonding pad
semiconductor device
film
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003387844A
Other languages
Japanese (ja)
Inventor
Junji Yamada
順治 山田
Yuji Tsukada
雄二 塚田
Hiroyuki Suzuki
弘之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2003387844A priority Critical patent/JP2005150508A/en
Publication of JP2005150508A publication Critical patent/JP2005150508A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To suppress the occurrence of a bonding peel-off defect caused by the reason that components such as C and F in etching gas such as CF<SB>4</SB>and CHF<SB>3</SB>to be used in an etching process for forming the aperture of a passivation film consisting of a silicon nitride film is left on the Al surface of a bonding pad. <P>SOLUTION: The method for manufacturing a semiconductor device comprises a process for forming the passivation film 3 having the aperture K1 on the bonding pad 2, a process for washing the surface of the bonding pad 2 by using an alkali group chemicals, and a process for bonding wires on the bonding pad 2 washed by the alkali group chemicals. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、ボンディングパッド上に開口部を有するパッシベーション膜を介してボンディングパッド上にワイヤーボンディングする工程を有する半導体装置の製造方法で、特にボンディング剥がれ不良の発生を抑止する技術に関する。   The present invention relates to a method for manufacturing a semiconductor device including a step of wire bonding onto a bonding pad via a passivation film having an opening on the bonding pad, and more particularly to a technique for suppressing the occurrence of bonding peeling defects.

図７に示すように、半導体素子２１上に形成されたボンディングパッド２２上に開口部を有するパッシベーション膜２３が形成され、前記ボンディングパッド２２上にボンディングワイヤー２４の一端をキャピラリ等のボンディングツール２５を用いてワイヤーボンディングし、他端をリードフレーム２６上の所望位置にワイヤーボンディングしている。   As shown in FIG. 7, a passivation film 23 having an opening is formed on a bonding pad 22 formed on a semiconductor element 21, and one end of a bonding wire 24 is connected to the bonding pad 22 with a bonding tool 25 such as a capillary. The other end is wire-bonded at a desired position on the lead frame 26.

このような技術は、例えば以下の特許文献に記載されている。
特開２００２−７６０５１号公報 Such a technique is described in, for example, the following patent documents.
Japanese Patent Laid-Open No. 2002-76051

しかしながら、上述した従来の半導体装置の製造方法において、ボンディング剥がれ不良が発生する問題があった。   However, the above-described conventional method for manufacturing a semiconductor device has a problem in that bonding peeling failure occurs.

この要因として、発明者は、シリコン窒化膜から成るパッシベーション膜２３に開口部を形成するためのエッチング工程において用いられる、例えばＣＦ４やＣＨＦ３等のエッチングガス内のＣやＦの成分などがボンディングパッドのＡｌ表面に残るため、ボンディング剥がれ不良が発生するものと考えた。 As a cause of this, the inventor used bonding of C and F components in an etching gas such as CF 4 and CHF 3 used in an etching process for forming an opening in the passivation film 23 made of a silicon nitride film. Since it remained on the Al surface of the pad, it was considered that bonding peeling failure occurred.

そこで、本発明の半導体装置の製造方法は、ボンディングパッド上に開口部を有するパッシベーション膜を形成する工程と、前記ボンディングパッドの表面をアルカリ系の薬品を用いて洗浄処理する工程と、アルカリ系の薬品で洗浄処理されたボンディングパッド上にワイヤーボンディングする工程とを有することを特徴とするものである。   Therefore, a method for manufacturing a semiconductor device of the present invention includes a step of forming a passivation film having an opening on a bonding pad, a step of cleaning the surface of the bonding pad using an alkaline chemical, an alkaline And a step of wire bonding on a bonding pad cleaned with chemicals.

また、前記洗浄処理する工程は、前記パッシベーション膜上にポリイミド膜が形成された状態で行うことを特徴とするものである。   Further, the cleaning process is performed in a state where a polyimide film is formed on the passivation film.

更に、前記洗浄処理する工程は、有機アルカリ系の薬品を用いて前記ボンディングパッドの表面をエッチングする工程であることを特徴とするものである。   Further, the cleaning process is a process of etching the surface of the bonding pad using an organic alkaline chemical.

本発明によれば、ボンディングパッドの表面をアルカリ系の薬品を用いて洗浄処理する工程を具備させたことで、パッシベーション膜に開口部を形成するためのエッチング工程においてボンディングパッド上に残ったＣやＦの成分が除去されるので、その後の熱処理や湿度などの影響によるボンディングパッド上の異常酸化の発生が抑止されるため、ボンディング剥がれを抑止できる。   According to the present invention, the process of cleaning the surface of the bonding pad with an alkaline chemical is provided, so that C or C remaining on the bonding pad in the etching process for forming the opening in the passivation film is formed. Since the component of F is removed, the occurrence of abnormal oxidation on the bonding pad due to the influence of the subsequent heat treatment or humidity is suppressed, so that the peeling of bonding can be suppressed.

以下、本発明の一実施形態の半導体装置の製造方法について図面を参照しながら詳述する。   Hereinafter, a semiconductor device manufacturing method according to an embodiment of the present invention will be described in detail with reference to the drawings.

先ず、ボンディングパッド構造について、図６を参照して説明すると、本実施形態のボンディングパッド２は、半導体素子１上に下地層２ａ、バリア層２ｂ、接合層２ｃの３層が積層されて形成されており、キャピラリ等のボンディングツール７にＡｕ又はＡｕ合金からなるボンディングワイヤー６を通し、ボンディングツール７先端にトーチとの放電によってボール６ａを形成し、ボール６ａをボンディングパッド２の接合層２ｃに熱及び超音波振動により圧着した後、ボンディングワイヤー６を実装基板のリードフレーム８に移動して圧着、切断して両者を接続する。   First, the bonding pad structure will be described with reference to FIG. 6. The bonding pad 2 of this embodiment is formed by laminating three layers of a base layer 2a, a barrier layer 2b, and a bonding layer 2c on a semiconductor element 1. A bonding wire 6 made of Au or an Au alloy is passed through a bonding tool 7 such as a capillary, and a ball 6a is formed at the tip of the bonding tool 7 by discharge with a torch. The ball 6a is heated to the bonding layer 2c of the bonding pad 2. And after crimping by ultrasonic vibration, the bonding wire 6 is moved to the lead frame 8 of the mounting substrate and crimped and cut to connect them.

ここで、下地層２ａは、半導体素子１の通常の配線工程で形成されるＡｌ、又はＡｌにＣｕ等を添加したＡｌ合金等からなり、その膜厚は、半導体素子１の配線と同等の膜厚を有している。   Here, the base layer 2a is made of Al formed in a normal wiring process of the semiconductor element 1, or Al alloy obtained by adding Cu or the like to Al, and the film thickness thereof is equivalent to that of the wiring of the semiconductor element 1. Has a thickness.

また、バリア層２ｂはＴｉ、ＴｉＮ等のＴｉ合金又はそれらの積層体で構成され、それぞれの厚みは、ボール６ａと接合層２ｃの接合界面に形成されるＡｕ−Ａｌ合金層（図示せず）の下地層２ａへの浸食を防止できる厚さに設定される。   The barrier layer 2b is made of a Ti alloy such as Ti or TiN or a laminate thereof, and each thickness is an Au—Al alloy layer (not shown) formed at the bonding interface between the ball 6a and the bonding layer 2c. The thickness is set to prevent erosion of the underlying layer 2a.

更に、接合層２ｃは、下地層２ａと同じＡｌ又はＡｌにＣｕ等を添加したＡｌ合金等で形成され、その膜厚は、熱圧着時にボンディングワイヤー６のボール６ａが接合層２ｃに食い込み、ボール６ａの表層に形成されるＡｕ−Ａｌ合金層がバリア層２ｂに接する程度の膜厚に設定されている。   Further, the bonding layer 2c is formed of the same Al as the base layer 2a or an Al alloy obtained by adding Cu or the like to Al, and the film thickness thereof is such that the ball 6a of the bonding wire 6 bites into the bonding layer 2c during thermocompression bonding. The film thickness is set such that the Au—Al alloy layer formed on the surface layer 6a is in contact with the barrier layer 2b.

そして、図１に示すように前記ボンディングパッド２上にシリコン窒化膜から成るパッシベーション膜３及びポリイミド膜４が形成され、このポリイミド膜４上にレジスト膜を形成し、このレジスト膜をマスクに前記ポリイミド膜４及びパッシベーション膜３をエッチングして開口部Ｋ１を形成する。   Then, as shown in FIG. 1, a passivation film 3 and a polyimide film 4 made of a silicon nitride film are formed on the bonding pad 2, a resist film is formed on the polyimide film 4, and the polyimide film is used with the resist film as a mask. The film 4 and the passivation film 3 are etched to form the opening K1.

本工程では、例えばＣＦ４やＣＨＦ３等のエッチングガスを用いて前記ポリイミド膜４及びパッシベーション膜３をエッチングしている。この場合、従来技術で説明したようにボンディングパッド２のＡｌ表面にＣやＦの成分などが残っている。図１に示す５が残留物層である。 In this step, the polyimide film 4 and the passivation film 3 are etched using an etching gas such as CF 4 or CHF 3 . In this case, as described in the prior art, C and F components remain on the Al surface of the bonding pad 2. Reference numeral 5 shown in FIG. 1 is a residue layer.

そして、図２に示すように開口部Ｋ１を介して前記ボンディングパッド２の表面を有機アルカリ系の薬液を用いてアルカリ洗浄処理する。これにより、前記ボンディングパッド２の表面に残留していたＣやＦの成分がエッチング除去される。従って、その後の熱処理や湿度などの影響によるボンディングパッド２の表面への異常酸化が抑止されるため、その後の工程におけるワイヤーボンディング剥がれが抑止できる。   Then, as shown in FIG. 2, the surface of the bonding pad 2 is subjected to an alkali cleaning process using an organic alkali chemical solution through the opening K1. As a result, the C and F components remaining on the surface of the bonding pad 2 are removed by etching. Therefore, since abnormal oxidation to the surface of the bonding pad 2 due to the influence of the subsequent heat treatment or humidity is suppressed, the wire bonding peeling in the subsequent process can be suppressed.

本実施形態では、有機アルカリ系の薬液として、例えば三菱ガス化学株式会社製のポリマー除去用洗浄液（ＥＬＭ−Ｃ２０）を用いているが、その他にも同じく三菱ガス化学株式会社製のフォトレジスト用剥離液（ＥＬＭ−Ｒ１０）や東京応化工業株式会社製のＳＳＴ３等の洗浄液を用いても良い。   In the present embodiment, for example, a polymer removal cleaning solution (ELM-C20) manufactured by Mitsubishi Gas Chemical Co., Ltd. is used as the organic alkaline chemical solution. A cleaning liquid such as liquid (ELM-R10) or SST3 manufactured by Tokyo Ohka Kogyo Co., Ltd. may be used.

以下、図３に示すように前記ボンディングパッド２上にボンディングワイヤー６の一端をボンディングツール７を用いてワイヤーボンディングし、他端をリードフレーム８上の所望位置にワイヤーボンディングする。   Thereafter, as shown in FIG. 3, one end of the bonding wire 6 is wire-bonded to the bonding pad 2 by using a bonding tool 7, and the other end is wire-bonded to a desired position on the lead frame 8.

本実施形態では、アルカリ系の薬品を用いているため、ポリイミド膜４をエッチングすることなく、ボンディングパッド２の表面のＣやＦの成分を取り除くことができる。尚、例えばＯ２アッシング工程によりボンディングパッド２の表面をエッチングする方法も考えられるが、この場合にはポリイミド膜４も削れてしまうため、パッケージとの密着力が低下するという問題が発生するため不適当である。 In this embodiment, since an alkaline chemical is used, the components of C and F on the surface of the bonding pad 2 can be removed without etching the polyimide film 4. Note that, for example, a method of etching the surface of the bonding pad 2 by an O 2 ashing process is conceivable. However, in this case, the polyimide film 4 is also scraped, which causes a problem in that the adhesive strength with the package is reduced. Is appropriate.

また、本発明を採用することで、ウエハーソート時の針圧を低減させることができ、プローブカードの寿命を延ばすことも可能になる。即ち、従来ではボンディングパッドの表面への異常酸化膜が形成されるため、通常の針圧では不良と判定されてしまうため、針圧を高めて測定する場合があった。そのため、針によりボンディングパッド２上の接合層２ｃが削られ、バリア膜２ｂが露出してしまい、ボンディングワイヤー６のＡｕと共晶できないということもあったが、本発明によればそのような問題もなくなる。   Further, by adopting the present invention, the needle pressure during wafer sorting can be reduced, and the life of the probe card can be extended. That is, conventionally, since an abnormal oxide film is formed on the surface of the bonding pad, it is determined that the normal needle pressure is defective. For this reason, the bonding layer 2c on the bonding pad 2 is scraped by the needle, and the barrier film 2b is exposed, so that it cannot eutectic with Au of the bonding wire 6. However, according to the present invention, such a problem is caused. Also disappear.

尚、本実施形態では、パッシベーション膜３及びポリイミド膜４を連続して開口部Ｋ１を設けているが、別々に開口部を形成するものに本発明を適用しても良い。即ち、図４に示すようにボンディングパッド２上を露出するようにパッシベーション３をパターニングして開口部Ｋ２を形成した後に、全面にポリイミド膜４を形成し、前記開口部Ｋ２を露出するようにパターニングして開口部Ｋ３を形成する。   In the present embodiment, the opening K1 is provided continuously with the passivation film 3 and the polyimide film 4, but the present invention may be applied to those in which the openings are formed separately. That is, as shown in FIG. 4, after forming the opening K2 by patterning the passivation 3 so as to expose the bonding pad 2, the polyimide film 4 is formed on the entire surface and patterned so as to expose the opening K2. Thus, the opening K3 is formed.

そして、図５に示すように開口部Ｋ２，Ｋ３を介して前記ボンディングパッド２の表面を有機アルカリ系の薬液を用いてアルカリ洗浄処理する。   Then, as shown in FIG. 5, the surface of the bonding pad 2 is subjected to an alkali cleaning process using an organic alkaline chemical solution through the openings K2 and K3.

この場合には、ポリイミド膜４のベーク（キュア）を行った際に、ボンディングパッド２の表面が酸化されてしまったり、ボンディングパッド２の表面に付着したポリイミド膜から出るガス成分等の付着物層１０を洗浄するものである。   In this case, when the polyimide film 4 is baked (cured), the surface of the bonding pad 2 is oxidized, or a deposit layer such as a gas component coming out of the polyimide film attached to the surface of the bonding pad 2 10 is washed.

これにより、前記ボンディングパッド２の表面に残留していたＣやＦの成分がエッチング除去される。従って、その後の熱処理や湿度などの影響によるボンディングパッド２の表面への異常酸化が抑止されるため、その後の工程におけるワイヤーボンディング剥がれが抑止できる。   As a result, the C and F components remaining on the surface of the bonding pad 2 are removed by etching. Therefore, since abnormal oxidation to the surface of the bonding pad 2 due to the influence of the subsequent heat treatment or humidity is suppressed, the wire bonding peeling in the subsequent process can be suppressed.

本発明の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the semiconductor device of this invention. 本発明のボンディングパッドを示す断面図である。It is sectional drawing which shows the bonding pad of this invention. 従来の半導体装置の製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the conventional semiconductor device.

符号の説明Explanation of symbols

１・・・半導体素子、２・・・ボンディングパッド、３・・・パッシベーション膜、４・・・ポリイミド膜、５・・・残留物層、６・・・ボンディングワイヤー、７・・・ボンディングツール、８・・・リードフレーム、１０・・・付着物層 DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2 ... Bonding pad, 3 ... Passivation film, 4 ... Polyimide film, 5 ... Residue layer, 6 ... Bonding wire, 7 ... Bonding tool, 8 ... Lead frame, 10 ... Adhesive layer

Claims (3)

ボンディングパッド上に開口部を有するパッシベーション膜を形成する工程と、
前記ボンディングパッドの表面をアルカリ系の薬品を用いて洗浄処理する工程と、
アルカリ系の薬品で洗浄処理されたボンディングパッド上にワイヤーボンディングする工程とを有することを特徴とする半導体装置の製造方法。 Forming a passivation film having an opening on the bonding pad;
Cleaning the surface of the bonding pad using an alkaline chemical;
And a step of wire bonding on a bonding pad cleaned with an alkaline chemical. 前記洗浄処理する工程は、前記パッシベーション膜上にポリイミド膜が形成された状態で行うことを特徴とする請求項１に記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 1, wherein the cleaning process is performed in a state where a polyimide film is formed on the passivation film. 前記洗浄処理する工程は、有機アルカリ系の薬品を用いて前記ボンディングパッドの表面をエッチングする工程であることを特徴とする請求項１あるいは請求項２に記載の半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 1, wherein the cleaning process is a process of etching the surface of the bonding pad using an organic alkaline chemical.
JP2003387844A 2003-11-18 2003-11-18 Method for manufacturing semiconductor device Pending JP2005150508A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446778A (en) * 2010-10-08 2012-05-09 北大方正集团有限公司 Method for improving wire bonding performance
JP2014516478A (en) * 2011-04-25 2014-07-10 エア プロダクツ アンド ケミカルズ インコーポレイテッド Lead frame cleaning to improve wire bonding.
JP2015162587A (en) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 Method for improving chemical resistance of polymer film, method for forming polymer film, film forming device, and method of manufacturing electronic product
CN110571135A (en) * 2019-09-05 2019-12-13 苏州通富超威半导体有限公司 surface treatment method of nickel-plated layer
US11233023B2 (en) 2019-09-20 2022-01-25 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446778A (en) * 2010-10-08 2012-05-09 北大方正集团有限公司 Method for improving wire bonding performance
JP2014516478A (en) * 2011-04-25 2014-07-10 エア プロダクツ アンド ケミカルズ インコーポレイテッド Lead frame cleaning to improve wire bonding.
JP2015162587A (en) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 Method for improving chemical resistance of polymer film, method for forming polymer film, film forming device, and method of manufacturing electronic product
KR101843616B1 (en) * 2014-02-27 2018-03-29 도쿄엘렉트론가부시키가이샤 Method for improving chemical resistance of polymerized film, polymerized film forming method, film forming apparatus, and electronic product manufacturing method
CN110571135A (en) * 2019-09-05 2019-12-13 苏州通富超威半导体有限公司 surface treatment method of nickel-plated layer
US11233023B2 (en) 2019-09-20 2022-01-25 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing semiconductor device

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