JP2005131732A - Grinding device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a grinding device by which a film formed to a substrate during grinding can be prevented from being peeled off and in which it is not necessary to select process conditions linked to the increase of a process time during grinding. <P>SOLUTION: The grinding device, which is provided with a grinding table 1 having a grinding face and a substrate holder 5 for holding the substrate 4, grinds the substrate 4 by bringing the substrate 4 into sliding contact with the grinding face. A monitoring controller 30 is provided to the grinding device. The monitoring controller 30 is composed of a monitoring part 31 for monitoring a grinding state of a face to be ground of the substrate 4 and a control part 32 for changing grinding conditions on the basis of the grinding state of the face to be ground detected by the monitoring part 31. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a polishing apparatus, and more particularly to a polishing apparatus that polishes a material to be polished such as a semiconductor wafer to a flat and mirror surface.

With the remarkable development of information communication means such as the Internet and high-speed and large-capacity communication networks, there is an increasing demand for miniaturization and high integration in the semiconductor integrated circuit technology that supports this.
However, as semiconductor devices are miniaturized and highly integrated, the delay of electrical signals in the semiconductor devices, that is, RC delay, has become a major problem. Since this RC delay is determined by the product of the wiring resistance R and the capacitance C between the wirings, as a countermeasure against RC delay, an electrically low resistance wiring metal and a low dielectric constant interlayer / line insulating film may be applied in combination. It is.

Therefore, instead of W, Al or Al alloy, Cu or Cu alloy having a lower electrical resistance is being adopted as a wiring material. Further, low dielectric constant (low-k) materials are being developed instead of SiO ₂ as interlayer / line insulating films. With the development of low dielectric constant materials, the density of films has been reduced by making the materials porous, etc., and the dielectric constant of interlayer / line insulating films has been further reduced.

  In addition, as semiconductor devices become more miniaturized and highly integrated, the element structure becomes more complex, and as the number of multilayer wiring layers increases, the unevenness of the surface of the semiconductor device increases and the level difference tends to increase. is there. This is because, in the manufacture of semiconductor devices, the process of forming a thin film, micropatterning for patterning and opening and then forming the next thin film is repeated many times.

  If the irregularities on the surface of the semiconductor device increase, the film thickness at the stepped part will become thinner during thin film formation, open due to disconnection of the wiring, short circuit due to insulation failure between wiring layers, etc. There is a tendency to decrease. In addition, even if the device normally operates normally at the beginning, a problem of reliability occurs for a long time use. Furthermore, if the irradiation surface has irregularities at the time of exposure in the lithography process, the lens focus of the exposure system becomes partially unfocused. Therefore, if the irregularities on the surface of the semiconductor device increase, it becomes difficult to form a fine pattern itself.

Accordingly, in the semiconductor device manufacturing process, a planarization technique for the surface of the semiconductor device is becoming increasingly important. Among the planarization techniques, the most important technique is chemical mechanical polishing (CMP). This chemical mechanical polishing uses a polishing apparatus to slide a substrate such as a semiconductor wafer onto the polishing surface while supplying a polishing liquid containing abrasive grains such as silica (SiO ₂ ) onto the polishing surface such as a polishing pad. Polishing in contact.

  This type of polishing apparatus includes a polishing table having a polishing surface made of a polishing pad or fixed abrasive grains, and a substrate holder called a top ring or a carrier head for holding a substrate such as a semiconductor wafer. . When polishing a substrate such as a semiconductor wafer using such a polishing apparatus, the substrate is pressed against the polishing surface with a predetermined pressure while the substrate is held by the substrate holder. At this time, by relatively moving the polishing table and the substrate holder, the substrate comes into sliding contact with the polishing surface, and the surface of the substrate is polished with a predetermined polishing pressure.

In general, low dielectric constant materials have a problem of low film adhesion strength. Therefore, when a low dielectric constant material is used for an interlayer / line insulating film, there are the following problems in the polishing process.
(1) Separation occurs at the interface between the interlayer / line insulating film and the metal film or other film, making it impossible to manufacture a semiconductor device.
(2) In order to prevent delamination of the interlayer / line insulating film, polishing with an excessively low polishing pressure is required, resulting in an increase in process time.
The present invention has been made in view of the above-described conventional problems, and can prevent the film formed on the substrate from peeling at the time of polishing, and select a process condition that leads to an increase in the process time at the time of polishing. An object of the present invention is to provide a polishing apparatus that can be eliminated.

  In order to achieve the above object, the present invention provides a polishing apparatus comprising a polishing tool having a polishing surface and a substrate holder for holding the substrate, and polishing the substrate by sliding the substrate and the polishing surface in contact with each other. A monitoring control device comprising a monitoring unit that monitors the polishing state of the surface to be polished and a control unit that changes polishing conditions based on the polishing state of the surface to be polished detected by the monitoring unit, To do.

  According to the present invention, the polishing state of the surface to be polished of the substrate can be monitored by the monitoring unit during polishing of the substrate, and the polishing condition can be changed based on the polishing state of the surface to be polished detected by the monitoring unit. Therefore, even when a film made of a material with low adhesion, such as a low dielectric constant material, is formed on the substrate, the polishing conditions are changed by detecting the polishing state that the film may peel off during polishing of the substrate By doing so, peeling of the film can be prevented.

According to one aspect of the present invention, the control unit changes the polishing condition when the polishing state detected by the monitoring unit is a preset condition related to peeling of a film formed on the substrate. To do.
According to the present invention, as a preset condition related to film peeling, for example, a threshold value of a friction force acting on the polishing interface is set, and if the friction force monitored during the process exceeds the threshold value, the monitoring is performed. The control unit issues a command to the control unit, and the control unit controls the process conditions in a direction to reduce the frictional force. Thereby, peeling of the film can be prevented. In addition, since the threshold value at which film peeling does not occur is known in advance, polishing can be performed as close as possible to this threshold value. Therefore, a process that is excessively safe and takes a long time for polishing to prevent film peeling. There is no need to select.

According to an aspect of the present invention, the monitoring unit monitors a load torque of a drive motor that rotates the polishing tool and / or the substrate holder.
According to one aspect of the present invention, the monitoring unit monitors a force acting on the substrate holder in the sliding direction.
According to one aspect of the present invention, the monitoring unit optically monitors the state of the surface to be polished of the substrate.
According to one aspect of the present invention, the monitoring unit monitors the presence or absence of acoustic emission.

According to one aspect of the present invention, the polishing condition is a polishing load.
According to one aspect of the present invention, the polishing condition is a rotational speed and / or a rocking speed of the polishing tool and / or the substrate holder.
According to one aspect of the present invention, the polishing condition is a supply amount of a polishing liquid.
According to one aspect of the present invention, the polishing condition is a type of polishing liquid.

According to one aspect of the present invention, the polishing conditions are in-situ dressing conditions.
According to one aspect of the present invention, the polishing condition is the temperature of the polishing liquid supplied to the polishing surface.
According to one aspect of the present invention, the polishing condition is the temperature of the polishing surface.

  According to the present invention, even when a material with low adhesion, such as a low dielectric constant material, is used for a semiconductor device, it is possible to prevent the film formed on the substrate from being peeled during polishing of the substrate. Further, it is not necessary to select a process that is excessively safe and requires a long time for polishing in order to prevent the film from peeling off, and the process margin can be widened.

Hereinafter, embodiments of a polishing apparatus according to the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view showing the overall configuration of the polishing apparatus of the present invention. As shown in FIG. 1, the polishing apparatus includes a polishing table 1 having a polishing surface, and a substrate holder 5 that holds a substrate 4 such as a semiconductor wafer as a material to be polished and presses it against the polishing surface on the polishing table 1. And a dresser 25 for dressing the polishing surface on the polishing table 1. The substrate 4 to be polished has a low-k film on the lower surface that is the surface to be polished. As a material for forming a low-k _{film, SiOC, F doped SiO 2,} HSQ, MSQ, BCB (Benzo Cyclo Butene), PAE (Poly Arylene Ethers), SiO 2, SiOF, Polyimide, PSI (Polyimide siloxane), CVD -PI (CVD polyimide), PTFE (Polytetrafluoroethylene), PNT (Polynaphthalene), BCB (Benzo cyclobutene), aC: F (fluorinated amorphous carbon), Palylene-N, Palylene-F, SOG-Siloxane, and these A porous structure of material is used.

  The polishing table 1 has a polishing pad 2 attached to the upper surface, and the upper surface of the polishing pad 2 constitutes the polishing surface. The polishing table 1 is driven to rotate by a polishing table drive motor 9. A polishing liquid supply nozzle 8 is installed above the polishing table 1, and the polishing liquid (slurry) Q is supplied to the polishing pad 2 on the polishing table 1 by the polishing liquid supply nozzle 8. Yes.

  There are various types of polishing pads available on the market, such as SUBA800, IC-1000, IC-1000 / SUBA400 (double-layer cloth) manufactured by Rodel, Surfin xxx-5, Surfin 000 manufactured by Fujimi Incorporated. Etc. SUBA800, Surfin xxx-5, and Surfin 000 are non-woven fabrics in which fibers are hardened with urethane resin, and IC-1000 is a hard foamed polyurethane (single layer). The polyurethane foam is porous (porous) and has a large number of fine dents or pores on its surface.

The polishing surface is not limited to the above-described polishing pad, and the polishing surface may be formed by, for example, fixed abrasive grains. The fixed abrasive is a plate formed by fixing abrasive in a binder. In polishing using fixed abrasive grains, polishing proceeds by abrasive grains spontaneously generated from the fixed abrasive grains. The fixed abrasive is composed of abrasive grains, a binder, and pores. For example, CeO ₂ or SiO ₂ or Al ₂ O ₃ having an average particle diameter of 0.5 μm or less is used for the abrasive grains, and an epoxy resin or a phenol resin is used for the binder. Or a thermoplastic resin such as MBS resin or ABS resin. Such fixed abrasive grains constitute a hard polishing surface. The fixed abrasive also includes a fixed abrasive pad having a two-layer structure in which a polishing pad having elasticity is stuck under a thin fixed abrasive layer in addition to the plate-like one described above.

The polishing table and the polishing pad described above constitute a polishing tool. Further, the above-described polishing table and fixed abrasive constitute a polishing tool. Here, examples of the polishing table include SuS (metal), Al ₂ O ₂ , and SiC.

  The substrate holder 5 includes a holder main body 6 that holds the upper surface of the substrate, and an annular retainer ring 7 that is fixed to the lower end of the holder main body 6 and engages with the outer peripheral edge of the substrate. The holder body 6 is made of a material having high strength and rigidity such as metal and ceramics. The retainer ring 7 is made of a highly rigid resin material or ceramics. The substrate holder 5 is connected to a substrate holder drive shaft 11 via a universal joint portion 10, and the substrate holder drive shaft 11 is connected to a substrate holder air cylinder 13 fixed to a substrate holder head 12. The substrate holder drive shaft 11 is moved up and down by the substrate holder air cylinder 13 to raise and lower the entire substrate holder 5 and press the substrate holder 5 against the polishing table 1.

  The substrate holder air cylinder 13 is connected to a compressed air source 22 via a fluid path 21 and a regulator R, and the regulator R can adjust the air pressure of the pressurized air supplied to the substrate holder air cylinder 13. it can. Thereby, the pressing force with which the substrate holder 5 presses the polishing pad 2 can be adjusted, and the polishing pressure can be adjusted to a desired value.

  The substrate holder drive shaft 11 is connected to the rotary cylinder 15 via a key (not shown). The rotary cylinder 15 includes a timing pulley 16 on the outer periphery thereof. A substrate holder driving motor 17 is fixed to the substrate holder head 12, and the timing pulley 16 is connected to a timing pulley 19 provided on the substrate holder driving motor 17 via a timing belt 18. Accordingly, when the substrate holder drive motor 17 is driven to rotate, the rotary cylinder 15 and the substrate holder drive shaft 11 rotate together via the timing pulley 19, the timing belt 18, and the timing pulley 16, and the substrate holder 5 rotates. The substrate holder head 12 is supported by a substrate holder head shaft 20 that is rotatably supported by a frame (not shown). As the substrate holder head shaft 20 rotates, the substrate holder head 12 swings, whereby the substrate holder 5 moves between the substrate delivery position for delivering the substrate and the polishing position on the polishing surface of the polishing table 1. It is possible.

  The dresser 25 is composed of, for example, a diamond dresser electrodeposited with diamond particles, and the dresser 25 is suspended from a dresser head 27 by a dresser drive shaft 26. The dresser drive shaft 26 is connected to a dresser drive motor 28, and the dresser drive motor 28 rotates the dresser 25. The dresser head 27 is supported by a dresser head shaft 29 that is rotatably supported by a frame (not shown). As the dresser head shaft 29 rotates, the dresser head 27 swings, whereby the dresser 25 can move between a standby position and a dressing position on the polishing surface of the polishing table.

Next, the operation of the polishing apparatus shown in FIG. 1 will be described.
In the polishing apparatus having the above configuration, when the substrate 4 such as a semiconductor wafer is transferred to the substrate holder 5, the entire substrate holder 5 is positioned at the substrate transfer position. When the substrate 4 is transferred to the substrate holder 5 by the substrate transfer device (pusher) at the substrate transfer position, the substrate 4 is vacuum-sucked to the lower end surface of the substrate holder 5. Next, the substrate holder 5 is moved with the substrate 4 adsorbed, and the entire substrate holder 5 is positioned above the polishing table 1. The outer peripheral edge of the substrate 4 is held by a retainer ring 7 so that the substrate 4 does not protrude from the substrate holder 5.

  Next, the adsorption of the substrate 4 is released, and at substantially the same time, the substrate holder air cylinder 13 connected to the substrate holder drive shaft 11 is operated, and the substrate 4 held on the lower end surface of the substrate holder 5 is removed from the polishing table 1. Press against the upper polishing pad 2. At this time, the polishing table 1 and the substrate holder 5 are rotated at a desired rotation speed by the polishing table drive motor 9 and the substrate holder drive motor 17, respectively. By flowing the polishing liquid Q from the polishing liquid supply nozzle 8 in advance, the polishing liquid Q is held on the polishing pad 2, and the polishing liquid Q exists between the polishing surface (lower surface) of the substrate 4 and the polishing pad 2. Polishing is performed. The polishing pressure can be adjusted to a desired value by adjusting the pressure of the air supplied to the substrate holder air cylinder 13. During the polishing process of the substrate 4, the polishing state of the surface to be polished of the substrate 4 is monitored and the polishing state is controlled. Simultaneously with the polishing of the substrate, the dresser 25 is rotated at a predetermined rotational speed while pressing the dresser 25 against the polishing pad 2 to perform in-situ dressing of the polishing pad 2 while supplying the dressing liquid.

Next, a polishing state monitoring control apparatus that monitors the polishing state and controls the polishing state during the polishing step will be described with reference to FIGS.
FIG. 2 schematically shows the polishing apparatus of the present invention shown in FIG. 1 and is a schematic diagram showing various sensors and a polishing state monitoring control apparatus installed in the polishing apparatus. As shown in FIG. 2, the polishing apparatus includes a polishing state monitoring control device 30, and this polishing state monitoring control device 30 includes a polishing state monitoring unit 31 and a polishing state control unit 32. The motor torque of the polishing table drive motor 9 that rotationally drives the polishing table 1 is detected based on the motor current value, and this detected motor torque is input to the polishing state monitoring unit 31 of the polishing state monitoring controller 30. The motor torque of the substrate holder driving motor 17 that rotates the substrate holder 5 is detected based on the motor current value, and the detected motor torque is input to the polishing state monitoring unit 31 of the polishing state monitoring control device 30. .

  Further, an acting force sensor 33 is installed in the substrate holder 5, and a force (acting force) acting in the sliding direction of the substrate holder 5 is detected by the acting force sensor 33. The detected acting force is input to the polishing state monitoring unit 31 of the polishing state monitoring control device 30. Further, an acoustic emission sensor (AE sensor) 35 is installed in the substrate holder 5, and an elastic wave (described later) detected by the acoustic emission sensor 35 is sent to the polishing state monitoring unit 31 of the polishing state monitoring controller 30. Entered.

  On the other hand, an optical sensor 34 is installed in the polishing table 1, and the reflected light from the substrate 4 detected by the optical sensor 34 is input to the polishing state monitoring unit 31 of the polishing state monitoring control device 30. The optical sensor 34 includes a light emitting element and a light receiving element, and measurement light is projected from the light emitting element onto the substrate 4, and reflected light from the substrate 4 is received by the light receiving element. The received reflected light is input to the polishing state monitoring unit 31 as described above.

Next, the operation of the various sensors and the polishing state monitoring and control apparatus configured as shown in FIG. 2 will be described.
The torque values of the polishing table drive motor 9 and the substrate holder drive motor 17 are input to the polishing state monitoring unit 31 of the polishing state monitoring control device 30, and the polishing state monitoring unit 31 uses the torque of the polishing table drive motor 9 and / or From the torque of the substrate holder drive motor 17, the frictional force acting between the surface to be polished of the substrate 4 and the polishing surface of the polishing pad 2 on the polishing table 1 is detected. In this case, the relationship between the frictional force acting on the polishing interface between the surface to be polished of the substrate 4 and the polishing surface of the polishing pad 2 and the load torque (motor torque) is determined in advance.

FIG. 3 is a graph showing the relationship between the previously obtained motor load torque and the frictional force acting on the polishing interface. In FIG. 3, the horizontal axis represents the motor load torque, and the vertical axis represents the frictional force acting on the polishing interface. As is apparent from FIG. 3, there is a linear correlation between the load torque and the frictional force of the motor.
As shown in FIG. 3, based on the relationship between the motor load torque obtained in advance and the frictional force acting on the polishing interface, the torque of the polishing table drive motor 9 and / or the torque of the substrate holder drive motor 17 is calculated from the substrate 4. The frictional force acting between the surface to be polished and the polishing surface of the polishing pad 2 on the polishing table 1 is detected. The friction force acting on the polishing interface between the surface to be polished of the substrate 4 and the polishing surface of the polishing pad 2 detected in this way is constantly monitored by the polishing state monitoring unit 31 during the polishing process.

  The acting force sensor 33 provided on the substrate holder 5 is composed of an acceleration sensor, and based on the acceleration (vibration) detected by the acting force sensor 33, the surface to be polished of the substrate 4 and the polishing surface of the polishing pad 2 are made. The frictional force acting on the polishing interface can be detected. In this case, from the signal input from the acting force sensor 33 to the polishing state monitoring unit 31 of the polishing state monitoring control device 30, a frequency component having a strong correlation with the polishing process is extracted in the polishing state monitoring unit 31, and the time change thereof is taken. Be monitored. The relationship between the frictional force acting on the polishing interface between the surface to be polished of the substrate 4 and the polishing surface of the polishing pad 2 and the vibration strength is determined in advance.

In the optical sensor 34, visible light is projected from the light emitting element onto the surface to be polished of the substrate 4, reflected light from the surface to be polished of the substrate 4 is received by the light receiving element, and this reflected light is monitored and controlled in the polishing state. It can be input to the polishing state monitoring unit 31 of the apparatus 30 to detect the light reflectance. The polishing state monitoring unit 31 can optically monitor the state of the surface to be polished of the substrate 4 by monitoring the reflectance of this light during the polishing process.
FIG. 4 is a graph showing the relationship between the light reflectance determined in advance and the surface to be polished of the substrate. In FIG. 4, the horizontal axis represents time (seconds), and the vertical axis represents light reflectance (%) of the surface to be polished of the substrate. As shown in FIG. 4, the reflectance (%) changes abruptly in the vicinity of 30 seconds, and thereafter, the reflectance decreases rapidly. This is because peeling of the film occurred in the vicinity of 30 seconds. By monitoring the light reflectance of the surface to be polished of the substrate 4, it is possible to detect the occurrence of peeling of the film formed on the substrate 4.

  The acoustic emission sensor 35 provided in the substrate holder 5 emits an elastic wave in the ultrasonic band when the film on the surface to be polished of the substrate 4 is peeled off (this phenomenon is called acoustic emission). It is possible to detect and detect peeling of the film. The polishing state monitoring unit 31 monitors the presence or absence of acoustic emission (AE) during the polishing process, and monitors film peeling that occurs on the surface to be polished of the substrate 4.

As described above, the monitoring target values such as the motor torque, vibration intensity, light reflectance, and AE are constantly monitored by the polishing state monitoring unit 31 of the polishing state monitoring control device 30 during the polishing process. . In this case, the polishing state monitoring unit 31 constantly compares measured values such as torque, vibration intensity, and light reflectance with predetermined threshold values during the process. The threshold value is determined by the following procedure, for example.
1) The critical frictional force for delamination of the substrate to be polished is grasped in advance.
2) Consider a safety factor and define a threshold for the frictional force that may be applied to the substrate during the process.
When the frictional force of the polishing interface monitored during the process exceeds the threshold value using the threshold value obtained as described above, a command is issued from the polishing state monitoring unit 31 to the polishing state control unit 32, and the polishing state control unit 32 The process conditions are controlled in the direction of decreasing the friction force. That is, control is performed such as reducing the polishing load, decreasing the flow rate of the polishing liquid (slurry), decreasing the rotation speed of the substrate holder 5 and / or the polishing table 1, and changing the type of polishing liquid (slurry).

  As described above, when the measured value that has been monitored exceeds the threshold value, the polishing state monitoring unit 31 issues a command to the polishing state control unit 32. Control of polishing load, control of rotation speed of polishing table 1 and / or substrate holder 5, control of supply amount of polishing liquid, change of type of polishing liquid, control of in-situ dressing conditions, control of polishing liquid temperature, polishing Control the surface temperature. In this case, among these controls, one or two or more controls are appropriately combined to prevent the film formed on the substrate 4 from peeling off. The temperature control of the polishing liquid is performed by providing temperature adjusting means such as a heater or a chiller for heating or cooling the polishing liquid. As a method for controlling the temperature of the polishing surface, there are a method of flowing a temperature adjusting fluid from the back surface of the polishing table, a method of heating the polishing surface by irradiating light, a method of blowing air to the polishing surface and cooling.

FIG. 5 is a graph showing the relationship between the supply amount of the polishing liquid and the frictional force. The horizontal axis represents the flow rate (ml / min) of the polishing liquid, and the vertical axis represents the frictional force (N) at the polishing interface.
As is clear from FIG. 5, the frictional force at the polishing interface can be reduced by reducing the supply amount of the polishing liquid. Therefore, if the monitored frictional force exceeds the threshold, the supply amount of the polishing liquid is decreased to reduce the frictional force. Thereby, peeling of the film formed on the substrate 4 can be prevented in advance.

FIG. 6 is a graph showing the relationship between the type of polishing liquid and the frictional force. The horizontal axis represents the type of polishing liquid and the vertical axis represents the friction coefficient. In FIG. 6, 0x-1 is a slurry SS-25 for polishing a silicon oxide film manufactured by Cabot, Cu-1 is a slurry PL7101 for polishing a copper film manufactured by Fujimi Incorporated, and Cu-2 is a copper film manufactured by JSR. Polishing slurry CMS7303 / 7304, Cu-3 is a copper film polishing slurry PL7102 / DCM-G2 manufactured by Fujimi Incorporated, Cu-4 is a copper film polishing abrasive-free slurry 1, Cu-5 Is an abrasive-free slurry 2 for polishing a copper film, Ta-1 is a slurry B-12 for barrier metal polishing manufactured by Fujimi Incorporated, and Ta-2 is a slurry CMS8301 for polishing a barrier metal manufactured by JSR.
As apparent from FIG. 6, the frictional force at the polishing interface can be reduced by changing the type of the polishing liquid. Accordingly, when the monitored frictional force of the polishing interface exceeds the threshold value, the frictional force is lowered by changing the type of the polishing liquid. Thereby, peeling of the film formed on the substrate 4 can be prevented in advance.

  A plurality of the threshold values can be determined, and an optimal process can be maintained by determining a lower limit value and an upper limit value. The optimum process condition is that the frictional force at the polishing interface is as small as possible and the polishing rate is as high as possible. However, in-plane uniformity of the surface to be polished, pattern characteristics, etc. need to be considered. Basically, if the frictional force is large, the polishing rate is also increased. Therefore, a condition in which the frictional force is as close as possible to the above-described threshold value can be said to be the optimum process condition. In other words, while monitoring the frictional force at the polishing interface in the polishing state monitoring unit 31, if the frictional force is too low, the parameter is controlled to increase the frictional force.

It is the schematic which shows the whole structure of the grinding | polishing apparatus of this invention. FIG. 2 is a schematic diagram showing the polishing apparatus of the present invention shown in FIG. 1 and showing various sensors and a polishing state monitoring control apparatus installed in the polishing apparatus. It is a graph which shows the relationship between the load torque of the motor calculated | required previously, and the frictional force which acts on a grinding | polishing interface. It is a graph which shows the relationship between the reflectance of the light calculated | required previously, and the to-be-polished surface of a board | substrate. It is a graph which shows the relationship between polishing liquid supply amount and frictional force. It is a graph which shows the relationship between the kind of polishing liquid, and frictional force.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Polishing table 2 Polishing pad 4 Substrate 5 Substrate holder 6 Holder body 7 Retainer ring 8 Polishing liquid supply nozzle 9 Polishing table drive motor 10 Universal joint part 11 Substrate holder drive shaft 12 Substrate holder head 13 Substrate holder air cylinder 15 Rotating cylinder 16 Timing pulley 17 Substrate holder drive motor 18 Timing belt 19 Timing pulley 20 Substrate holder head shaft 21 Fluid path 25 Dresser 26 Dresser drive shaft 27 Dresser head 28 Dresser drive motor 29 Dresser head shaft 30 Polishing state monitoring control device 31 Polishing state monitoring unit 32 Polishing state control unit 33 Action force sensor 34 Optical sensor 35 Acoustic emission sensor R Regulator

Claims (13)

In a polishing apparatus comprising a polishing tool having a polishing surface and a substrate holder for holding the substrate, and polishing the substrate by bringing the substrate and the polishing surface into sliding contact with each other,
A monitoring controller comprising a monitoring unit that monitors a polishing state of a surface to be polished of a substrate and a control unit that changes polishing conditions based on the polishing state of the surface to be polished detected by the monitoring unit is provided. Polishing equipment.   2. The control unit changes the polishing condition when the polishing state detected by the monitoring unit becomes a preset condition related to peeling of a film formed on a substrate. The polishing apparatus as described.   The polishing apparatus according to claim 1, wherein the monitoring unit monitors a load torque of a driving motor that rotates the polishing tool and / or the substrate holder.   The polishing apparatus according to claim 1, wherein the monitoring unit monitors a force acting on the substrate holder in a sliding direction.   The polishing apparatus according to claim 1, wherein the monitoring unit optically monitors the state of the surface to be polished of the substrate.   The polishing apparatus according to claim 1, wherein the monitoring unit monitors the presence or absence of acoustic emission.   The polishing apparatus according to claim 1, wherein the polishing condition is a polishing load.   The polishing apparatus according to claim 1, wherein the polishing condition is a rotation speed and / or a rocking speed of a polishing tool and / or a substrate holder.   The polishing apparatus according to claim 1, wherein the polishing condition is a supply amount of a polishing liquid.   The polishing apparatus according to claim 1, wherein the polishing condition is a type of polishing liquid.   The polishing apparatus according to claim 1, wherein the polishing condition is an in-situ dressing condition.   The polishing apparatus according to claim 1, wherein the polishing condition is a temperature of a polishing liquid supplied to a polishing surface.   The polishing apparatus according to claim 1, wherein the polishing condition is a temperature of a polishing surface.

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