[go: up one dir, main page]

JP2005062362A5 - - Google Patents

Download PDF

Info

Publication number
JP2005062362A5
JP2005062362A5 JP2003290845A JP2003290845A JP2005062362A5 JP 2005062362 A5 JP2005062362 A5 JP 2005062362A5 JP 2003290845 A JP2003290845 A JP 2003290845A JP 2003290845 A JP2003290845 A JP 2003290845A JP 2005062362 A5 JP2005062362 A5 JP 2005062362A5
Authority
JP
Japan
Prior art keywords
mask
unit
uniform
pattern
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003290845A
Other languages
Japanese (ja)
Other versions
JP2005062362A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2003290845A priority Critical patent/JP2005062362A/en
Priority claimed from JP2003290845A external-priority patent/JP2005062362A/en
Publication of JP2005062362A publication Critical patent/JP2005062362A/en
Publication of JP2005062362A5 publication Critical patent/JP2005062362A5/ja
Pending legal-status Critical Current

Links

Claims (9)

複数のレンズのそれぞれに対応する単位マスクパターンに段階的な階調をもたせ、これらのマスクパターンをレジストに転写して光学素子を作製する際に用いるマスクであって、
前記段階的な階調における均一な階調領域の幅および/または該均一な階調領域間の境界の位置が、前記それぞれの単位マスクパターンにおいて異なっていることを特徴とするマスク。
A unit mask pattern corresponding to each of a plurality of lenses has a stepped gradation, and is a mask used when an optical element is manufactured by transferring these mask patterns to a resist,
A mask characterized in that a uniform gradation region width and / or a boundary position between the uniform gradation regions in the stepwise gradation are different in each of the unit mask patterns.
前記段階的な階調を、透過率の変化によって出すようにしたマスクであって、
前記透過率が均一な領域の幅および/または該領域間の境界の位置が、前記それぞれの単位マスクパターンにおいて異なっていることを特徴とする請求項1に記載のマスク。
A mask in which the stepwise gradation is produced by a change in transmittance,
2. The mask according to claim 1, wherein the width of the region having the uniform transmittance and / or the position of the boundary between the regions are different in each of the unit mask patterns.
前記段階的な階調を、解像不可能なピッチで開口部と遮光部を配置して出すようにしたマスクであって、
前記開口部と遮光部の面積比が均一な領域の幅および/または該領域間の境界の位置が、前記それぞれの単位マスクパターンにおいて異なっていることを特徴とする請求項1に記載のマスク。
The stepwise gradation is a mask in which openings and light-shielding portions are arranged at a pitch that cannot be resolved,
2. The mask according to claim 1, wherein a width of a region having a uniform area ratio between the opening and the light-shielding portion and / or a position of a boundary between the regions are different in each of the unit mask patterns.
前記段階的な階調を、遮光材の厚さまたは酸化金属濃度による透過率の変化によって出すようにしたマスクであって、
前記透過率が均一な領域の幅および/または該領域間の境界の位置が、前記それぞれの単位マスクパターンにおいて異なっていることを特徴とする請求項1に記載のマスク。
The stepwise gradation is produced by changing the transmittance depending on the thickness of the light shielding material or the metal oxide concentration,
2. The mask according to claim 1, wherein the width of the region having the uniform transmittance and / or the position of the boundary between the regions are different in each of the unit mask patterns.
前記透過率が均一な領域の幅が、前記それぞれの単位マスクパターンのうちの二つ以上の単位マスクパターンにおいて異なっていることを特徴とする請求項1から3のいずれか1項に記載のマスク。 The width of the transmittance is uniform region, the mask according to any one of claims 1 to 3, characterized in that differ in more than one unit mask pattern of the unit mask pattern of the respective . 前記領域間の境界の位置が、前記それぞれの単位マスクパターンのうちの二つ以上の単位マスクパターンにおいて異なっていることを特徴とする請求項1から3のいずれか1項に記載のマスク。 Position of the boundary between the regions, the mask according to any one of claims 1 to 3, characterized in that differ in more than one unit mask pattern of the unit mask pattern of said respective. 前記透過率が均一な領域の幅および前記領域間の境界の位置が、前記それぞれの単位マスクパターンのうちの二つ以上の単位マスクパターンにおいて異なっていることを特徴とする請求項1から3のいずれか1項に記載のマスク。 The position of the boundary between the width and the area of the transmittance is uniform region, of claims 1 to 3, characterized in that differ in more than one unit mask pattern of the unit mask pattern of the respective The mask of any one of Claims. 前記マスクが、複数のレンズがアレイ状に配列されたレンズパターンを有するマスクであることを特徴とする請求項1から7のいずれか1項に記載のマスク。 The mask according to any one of claims 1 to 7, wherein the mask is a mask having a lens pattern in which a plurality of lenses are arranged in an array. マスクのパターンをレジストに転写して光学素子を作製する光学素子の作製方法において、前記マスクに請求項1から8のいずれか1項に記載のマスクを用いることを特徴とする光学素子の作製方法 In a method for manufacturing an optical element for producing an optical element by transferring the pattern on the mask onto the resist, a method for manufacturing an optical element, which comprises using a mask according to any one of claims 1 to 8 in the mask .
JP2003290845A 2003-08-08 2003-08-08 Mask to be used for manufacture of optical element, method for manufacturing optical element by using the mask, optical element, optical system, exposure apparatus, and method for manufacturing device Pending JP2005062362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003290845A JP2005062362A (en) 2003-08-08 2003-08-08 Mask to be used for manufacture of optical element, method for manufacturing optical element by using the mask, optical element, optical system, exposure apparatus, and method for manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003290845A JP2005062362A (en) 2003-08-08 2003-08-08 Mask to be used for manufacture of optical element, method for manufacturing optical element by using the mask, optical element, optical system, exposure apparatus, and method for manufacturing device

Publications (2)

Publication Number Publication Date
JP2005062362A JP2005062362A (en) 2005-03-10
JP2005062362A5 true JP2005062362A5 (en) 2006-09-14

Family

ID=34368744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003290845A Pending JP2005062362A (en) 2003-08-08 2003-08-08 Mask to be used for manufacture of optical element, method for manufacturing optical element by using the mask, optical element, optical system, exposure apparatus, and method for manufacturing device

Country Status (1)

Country Link
JP (1) JP2005062362A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5008479B2 (en) * 2007-06-28 2012-08-22 ラピスセミコンダクタ株式会社 Method for forming resist pattern and photomask
JP2014029524A (en) * 2012-07-04 2014-02-13 Fujifilm Corp Microlens manufacturing method

Similar Documents

Publication Publication Date Title
JP4527967B2 (en) Focusing plate master and manufacturing method thereof
JP6413300B2 (en) Display body and manufacturing method of display body
JP5239417B2 (en) Microlens array manufacturing method, density distribution mask and design method thereof
JP2009276717A (en) Distributed density mask and method of manufacturing the same, and method of manufacturing microlens array
US10642150B2 (en) Photomask and method for manufacturing column spacer for color filter using the same
JPH07191209A (en) Manufacturing method of micro optical element
JP2005062362A5 (en)
JP2006267262A5 (en)
KR100506938B1 (en) Photomask for forming photoresist patterns repeating in two dimensions and method for fabricating the same
JP2008185970A5 (en)
JP2004012932A5 (en)
JP5136288B2 (en) Concentration distribution mask and manufacturing method thereof
KR100807083B1 (en) Mask for forming contact hole, mask manufacturing method and flash memory device manufacturing method using the mask
JP4027108B2 (en) Photo mask
JP3968275B2 (en) Method of manufacturing inclined reflector having bump structure and method of manufacturing bump structure of inclined reflector
JP4603244B2 (en) Focus plate and method of manufacturing the focus plate
JP3462650B2 (en) Resist exposure method and method of manufacturing semiconductor integrated circuit device
KR100510455B1 (en) Mask pattern for formation of an isolated pattern, method for fabricating the same and method for forming an isolated pattern using the same
US20030203286A1 (en) High-transmittance halftone phase shift mask and manufacturing method of semiconductor device
TWI305607B (en)
KR101095049B1 (en) Exposure mask
JP6657755B2 (en) Method for manufacturing color filter and photomask set
KR100849800B1 (en) Exposure mask and method for manufacturing semiconductor device using the same
JP4625643B2 (en) Formation method of linear grating
JP2005275000A (en) Mask used for manufacturing optical element, and manufacturing method of optical element using the mask