JP2004358539A - High-temperature brazing filler metal - Google Patents
High-temperature brazing filler metal Download PDFInfo
- Publication number
- JP2004358539A JP2004358539A JP2003162678A JP2003162678A JP2004358539A JP 2004358539 A JP2004358539 A JP 2004358539A JP 2003162678 A JP2003162678 A JP 2003162678A JP 2003162678 A JP2003162678 A JP 2003162678A JP 2004358539 A JP2004358539 A JP 2004358539A
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- JP
- Japan
- Prior art keywords
- weight
- filler metal
- brazing filler
- temperature brazing
- brazing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005219 brazing Methods 0.000 title claims abstract description 23
- 239000000945 filler Substances 0.000 title abstract description 8
- 239000002184 metal Substances 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 title abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 16
- 239000000956 alloy Substances 0.000 abstract description 16
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 229910052802 copper Inorganic materials 0.000 abstract description 11
- 229910052759 nickel Inorganic materials 0.000 abstract description 6
- 239000010949 copper Substances 0.000 description 10
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000005476 soldering Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910018134 Al-Mg Inorganic materials 0.000 description 2
- 229910018467 Al—Mg Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Landscapes
- Die Bonding (AREA)
Abstract
Description
【０００１】
【発明の属する技術分野】
本発明は、電子部品や機械部品の組立などにおける高温はんだ付用のろう材、特にこれに用いるＺｎ系はんだ合金に関する。
【０００２】
【従来の技術】
パワートランジスタ素子のダイボンディングを始めとする各種電子部品の組立工程におけるはんだ付けでは、高温はんだ付けが行われ、比較的高温の３００℃前後の融点を有するはんだ合金（以下、単に「はんだ合金」という）がろう材として用いられている。このはんだ合金には、Ｐｂ−５重量％Ｓｎ合金に代表されるＰｂ合金（Ｐｂ系はんだ合金）が従来より用いられている。
【０００３】
近年、環境汚染に対する配慮からＰｂの使用を制限する動きが強くなってきている。こうした動きに対応して電子組立の分野においても、Ｐｂを含まないはんだ合金が求められている。
【０００４】
Ｐｂを含まないはんだ合金として、Ｚｎ−Ａｌ−Ｍｇ−Ｇａ合金が特開平１１−１７２３５２号で提案されている。しかし、Ａｇめっきに対する濡れ性は得られるものの、ＣｕやＮｉに対しては濡れ性が不足して接合することができない。
【０００５】
【特許文献１】
特開平１１−１７２３５２号公報
【０００６】
【発明が解決しようとする課題】
本発明の目的は、上記事情に鑑み、ＣｕやＮｉに対する濡れ性を向上させたＺｎ−Ａｌ−Ｍｇ−Ｇａはんだ合金による高温ろう材を提供することにある。
【０００７】
【課題を解決するための手段】
本発明による高温ろう材は、Ａｌを１〜７重量％、Ｍｇを０．５〜６重量％、Ｇａを０．１〜２０重量％およびＰを０．００１〜０．５重量％含み、残部がＺｎおよび不可避不純物からなる。
【０００８】
この高温ろう材は、Ｐｂを含まないＺｎ系合金からなり、かつ、従来のＺｎ系合金に比べてＣｕやＮｉに対する濡れ性が向上するため、半導体装置の接合部として広範囲に適用できる。その結果、Ｐｂを含まない環境に配慮した半導体装置を提供できる。
【０００９】
【発明の実施の形態】
本発明の高温ろう材において、Ａｌ含有量を１〜７重量％、Ｍｇ含有量を０．５〜６重量％としたのは、これらの組成範囲を外れると、合金の融点が高くなりすぎるからである。Ａｌ含有量を３〜４重量％、Ｍｇ含有量を２．５〜３重量％とするのが好ましい。Ｚｎ−Ａｌ−Ｍｇ系３元共晶組成あるいはそれに近い組成となるからである。
【００１０】
Ｇａは、Ｚｎ−Ａｌ−Ｍｇ系３元合金の融点を下げる元素である。Ｇａ含有量は、０．１重量％未満では上記融点の低下効果が小さすぎ、一方、２０重量％を超えると融点が低くなりすぎて、はんだ合金として不適当になるからである。好ましくは、２〜１３重量％ととする。
【００１１】
Ｐは、濡れ性を改善する元素であり、この添加によりＺｎ−Ａｌ−Ｍｇ−Ｇａ合金のＣｕやＮｉに対する濡れ性を向上させることができる。これは、ろう材溶解時に酸素がＰと優先的に反応し、溶解体表面に酸化膜が発生するのを防止し、濡れ性がより改善されるためと推定している。Ｐ含有量は、０．００１重量％未満では、上記濡れ性を向上させる効果が低すぎてしまう。一方、０．５重量％を超えると、低コストでの鋳造が困難になるからである。好ましくは、０．０２〜０．２重量％とする。
【００１２】
本発明の高温ろう材は、ビッカース硬度１００程度の高い硬度を有するため、加工性に劣っている。したがって、２００℃程度で熱間成形してろう材とするか、粉末とした後でペースト状のろう材とするのがよい。
【００１３】
【実施例】
［実施例１〜７、比較例１〜２］
Ｚｎ地金、Ａｌ地金、Ｍｇ地金、金属ＧａおよびＰ（以上の原料は、いずれも純度９９．９重量％）を用い、大気溶解炉によりろう材を溶製した。溶製したろう材を化学分析し、その結果を表１に示す。
【００１４】
上記溶製したろう材について、濡れ性の評価を次のように行った。（１）４００℃窒素気流中で保持するろう材浴を調製する、（２）Ｎｉめっきを施した銅片および銅片を上記浴中に５秒間浸漬した後、該銅片を取り出し観察する、（３）取り出した銅片のＮｉめっき面、銅面にろう材が濡れ広がった場合に「良」と、濡れ広がらなかった場合に「不良」と評価する。上記評価の結果を表１に示す。
【００１５】
【表１】
表１より、実施例のろう材は、ＣｕやＮｉに対しても良好な濡れ性が得られ、電子部品や機械部品の組立における高温はんだ付用に好適であり、かつ、広範囲に適用できることがわかる。
【００１７】
【発明の効果】
本発明により、従来のＺｎ系はんだ合金の濡れ性を改善し、Ｐｂはんだ代替のろう材を提供することができる。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a brazing filler metal for high-temperature soldering in assembling electronic parts and mechanical parts, and more particularly to a Zn-based solder alloy used for the same.
[0002]
[Prior art]
In the soldering process of assembling various electronic components including die bonding of power transistor elements, high-temperature soldering is performed, and a relatively high-temperature solder alloy having a melting point of about 300 ° C. (hereinafter, simply referred to as “solder alloy”) ) Is used as a brazing filler metal. As this solder alloy, a Pb alloy (Pb-based solder alloy) represented by a Pb-5% by weight Sn alloy has been conventionally used.
[0003]
In recent years, there has been a strong movement to limit the use of Pb due to consideration for environmental pollution. In response to such a movement, a solder alloy containing no Pb is required in the field of electronic assembly.
[0004]
As a solder alloy containing no Pb, a Zn-Al-Mg-Ga alloy has been proposed in JP-A-11-172352. However, although wettability to Ag plating is obtained, it is not possible to join Cu or Ni due to insufficient wettability.
[0005]
[Patent Document 1]
JP-A-11-172352
[Problems to be solved by the invention]
In view of the above circumstances, an object of the present invention is to provide a high-temperature brazing material made of a Zn-Al-Mg-Ga solder alloy having improved wettability to Cu and Ni.
[0007]
[Means for Solving the Problems]
The high-temperature brazing filler metal according to the present invention contains 1 to 7% by weight of Al, 0.5 to 6% by weight of Mg, 0.1 to 20% by weight of Ga and 0.001 to 0.5% by weight of P, and the balance Consists of Zn and unavoidable impurities.
[0008]
This high-temperature brazing material is made of a Zn-based alloy containing no Pb, and has improved wettability to Cu and Ni as compared with a conventional Zn-based alloy, so that it can be widely used as a joint of a semiconductor device. As a result, an environment-friendly semiconductor device containing no Pb can be provided.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
The reason why the Al content is set to 1 to 7% by weight and the Mg content is set to 0.5 to 6% by weight in the high-temperature brazing material of the present invention is that the melting point of the alloy becomes too high if the composition is out of these ranges. It is. It is preferable that the Al content is 3 to 4% by weight and the Mg content is 2.5 to 3% by weight. This is because a Zn-Al-Mg ternary eutectic composition or a composition close thereto is obtained.
[0010]
Ga is an element that lowers the melting point of the Zn—Al—Mg based ternary alloy. If the Ga content is less than 0.1% by weight, the effect of lowering the melting point is too small, while if it exceeds 20% by weight, the melting point becomes too low, making the alloy unsuitable as a solder alloy. Preferably, it is 2 to 13% by weight.
[0011]
P is an element that improves wettability, and the addition of P can improve the wettability of the Zn—Al—Mg—Ga alloy with respect to Cu and Ni. This is presumed to be because oxygen reacts preferentially with P when the brazing material is melted, thereby preventing an oxide film from being generated on the surface of the melt and further improving wettability. If the P content is less than 0.001% by weight, the effect of improving the wettability will be too low. On the other hand, if it exceeds 0.5% by weight, it becomes difficult to cast at low cost. Preferably, it is 0.02 to 0.2% by weight.
[0012]
Since the high-temperature brazing material of the present invention has a high hardness of about 100 Vickers hardness, it is inferior in workability. Therefore, it is preferable that the brazing material is hot-formed at about 200 ° C. to be a brazing material, or that the powder is formed into a paste-like brazing material.
[0013]
【Example】
[Examples 1 to 7, Comparative Examples 1 and 2]
A brazing filler metal was melted in an air melting furnace using Zn ingot, Al ingot, Mg ingot, metallic Ga and P (all of the above raw materials had a purity of 99.9% by weight). The melted brazing material was chemically analyzed, and the results are shown in Table 1.
[0014]
The wettability of the melted brazing material was evaluated as follows. (1) preparing a brazing material bath held in a nitrogen stream at 400 ° C .; (2) immersing the Ni-plated copper piece and the copper piece in the bath for 5 seconds, and taking out and observing the copper piece; (3) When the brazing material spreads wet on the Ni-plated surface and copper surface of the copper piece taken out, it is evaluated as “good”, and when it does not spread, it is evaluated as “bad”. Table 1 shows the results of the above evaluation.
[0015]
[Table 1]
From Table 1, it can be seen that the brazing materials of the examples have good wettability to Cu and Ni, are suitable for high-temperature soldering in assembling electronic components and mechanical components, and can be widely applied. Understand.
[0017]
【The invention's effect】
According to the present invention, it is possible to improve the wettability of a conventional Zn-based solder alloy and provide a brazing filler metal that can substitute for Pb solder.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003162678A JP2004358539A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003162678A JP2004358539A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2004358539A true JP2004358539A (en) | 2004-12-24 |
Family
ID=34054754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003162678A Pending JP2004358539A (en) | 2003-06-06 | 2003-06-06 | High-temperature brazing filler metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004358539A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009066704A1 (en) | 2007-11-20 | 2009-05-28 | Toyota Jidosha Kabushiki Kaisha | Solder material, process for producing the solder material, joint product, process for producing the joint product, power semiconductor module, and process for producing the power semiconductor module |
| WO2010089647A1 (en) | 2009-02-05 | 2010-08-12 | Toyota Jidosha Kabushiki Kaisha | Junction body, semiconductor module, and manufacturing method for junction body |
| CN101653878B (en) * | 2009-09-11 | 2011-07-27 | 北京工业大学 | Zn-Mg magnesium alloy solder |
| JP2011235314A (en) * | 2010-05-11 | 2011-11-24 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY HAVING ZN AS MAIN COMPONENT |
| JP2012055905A (en) * | 2010-09-07 | 2012-03-22 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
| WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
| US20130045131A1 (en) * | 2011-08-17 | 2013-02-21 | Honeywell International Inc. | Lead-Free Solder Compositions |
| US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
| US10046417B2 (en) | 2011-08-17 | 2018-08-14 | Honeywell International Inc. | Lead-free solder compositions |
-
2003
- 2003-06-06 JP JP2003162678A patent/JP2004358539A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8283783B2 (en) | 2007-11-20 | 2012-10-09 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
| WO2009066704A1 (en) | 2007-11-20 | 2009-05-28 | Toyota Jidosha Kabushiki Kaisha | Solder material, process for producing the solder material, joint product, process for producing the joint product, power semiconductor module, and process for producing the power semiconductor module |
| WO2010089647A1 (en) | 2009-02-05 | 2010-08-12 | Toyota Jidosha Kabushiki Kaisha | Junction body, semiconductor module, and manufacturing method for junction body |
| CN101653878B (en) * | 2009-09-11 | 2011-07-27 | 北京工业大学 | Zn-Mg magnesium alloy solder |
| JP2011235314A (en) * | 2010-05-11 | 2011-11-24 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY HAVING ZN AS MAIN COMPONENT |
| JP2012055905A (en) * | 2010-09-07 | 2012-03-22 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
| JP2012121053A (en) * | 2010-12-08 | 2012-06-28 | Sumitomo Metal Mining Co Ltd | Lead free soldering alloy containing zinc as principal component |
| CN103249519B (en) * | 2010-12-08 | 2015-04-29 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
| WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
| GB2498912A (en) * | 2010-12-08 | 2013-07-31 | Sumitomo Metal Mining Co | Pb-Free Solder Alloy Having Zn as Main Component |
| CN103249519A (en) * | 2010-12-08 | 2013-08-14 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
| US8845828B2 (en) | 2010-12-08 | 2014-09-30 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy mainly containing Zn |
| DE112011104328B4 (en) * | 2010-12-08 | 2015-09-24 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy containing predominantly Zn |
| US20130045131A1 (en) * | 2011-08-17 | 2013-02-21 | Honeywell International Inc. | Lead-Free Solder Compositions |
| CN104169041A (en) * | 2011-08-17 | 2014-11-26 | 霍尼韦尔国际公司 | Lead-free solder compositions |
| US10046417B2 (en) | 2011-08-17 | 2018-08-14 | Honeywell International Inc. | Lead-free solder compositions |
| US10661393B2 (en) | 2011-08-17 | 2020-05-26 | Honeywell International Inc. | Lead-free solder compositions |
| US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
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