JP2004335693A5 - - Google Patents

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Publication number: JP2004335693A5
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2003128917A

Other languages

Japanese (ja)

Other versions

JP4532846B2 (en

JP2004335693A (en

Filing date

2003-05-07

Publication date

2006-06-08

2003-05-07 Application filed filed Critical

2003-05-07 Priority claimed from JP2003128917A external-priority patent/JP4532846B2/en

2003-05-07 Priority to JP2003128917A priority Critical patent/JP4532846B2/en

2004-04-27 Priority to TW093111750A priority patent/TWI259514B/en

2004-04-28 Priority to KR1020057020457A priority patent/KR100725141B1/en

2004-04-28 Priority to CNA2007101812355A priority patent/CN101145509A/en

2004-04-28 Priority to CNB2004800006869A priority patent/CN100358104C/en

2004-04-28 Priority to EP04730068A priority patent/EP1620880A4/en

2004-04-28 Priority to PCT/JP2004/006178 priority patent/WO2004100233A1/en

2004-11-25 Publication of JP2004335693A publication Critical patent/JP2004335693A/en

2005-01-19 Priority to US11/039,285 priority patent/US20050124137A1/en

2006-06-08 Publication of JP2004335693A5 publication Critical patent/JP2004335693A5/ja

2010-08-25 Publication of JP4532846B2 publication Critical patent/JP4532846B2/en

2010-08-25 Application granted granted Critical

2023-05-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

JP2003128917A 2003-05-07 2003-05-07 Manufacturing method of semiconductor substrate Expired - Fee Related JP4532846B2 (en)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
JP2003128917A JP4532846B2 (en)	2003-05-07	2003-05-07	Manufacturing method of semiconductor substrate
TW093111750A TWI259514B (en)	2003-05-07	2004-04-27	Semiconductor substrate and manufacturing method therefor
PCT/JP2004/006178 WO2004100233A1 (en)	2003-05-07	2004-04-28	Semiconductor substrate and manufacturing method therefor
CNA2007101812355A CN101145509A (en)	2003-05-07	2004-04-28	Semiconductor substrate and manufacturing method therefor
CNB2004800006869A CN100358104C (en)	2003-05-07	2004-04-28	Semiconductor substrate and manufacturing method therefor
EP04730068A EP1620880A4 (en)	2003-05-07	2004-04-28	Semiconductor substrate and manufacturing method therefor
KR1020057020457A KR100725141B1 (en)	2003-05-07	2004-04-28	Semiconductor substrate and manufacturing method thereof
US11/039,285 US20050124137A1 (en)	2003-05-07	2005-01-19	Semiconductor substrate and manufacturing method therefor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2003128917A JP4532846B2 (en)	2003-05-07	2003-05-07	Manufacturing method of semiconductor substrate

Publications (3)

Publication Number	Publication Date
JP2004335693A JP2004335693A (en)	2004-11-25
JP2004335693A5 true JP2004335693A5 (en)	2006-06-08
JP4532846B2 JP4532846B2 (en)	2010-08-25

Family

ID=33432059

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003128917A Expired - Fee Related JP4532846B2 (en)	2003-05-07	2003-05-07	Manufacturing method of semiconductor substrate

Country Status (6)

Country	Link
EP (1)	EP1620880A4 (en)
JP (1)	JP4532846B2 (en)
KR (1)	KR100725141B1 (en)
CN (2)	CN101145509A (en)
TW (1)	TWI259514B (en)
WO (1)	WO2004100233A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5128781B2 (en) *	2006-03-13	2013-01-23	信越化学工業株式会社	Manufacturing method of substrate for photoelectric conversion element
CN108231695A (en) *	2016-12-15	2018-06-29	上海新微技术研发中心有限公司	Composite substrate and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0794409A (en) *	1993-09-20	1995-04-07	Fujitsu Ltd	Method for forming III-V compound semiconductor thin film
JP3879173B2 (en) *	1996-03-25	2007-02-07	住友電気工業株式会社	Compound semiconductor vapor deposition method
JP3697106B2 (en) *	1998-05-15	2005-09-21	キヤノン株式会社	Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film
FR2784795B1 (en) *	1998-10-16	2000-12-01	Commissariat Energie Atomique	STRUCTURE COMPRISING A THIN LAYER OF MATERIAL COMPOSED OF CONDUCTIVE ZONES AND INSULATING ZONES AND METHOD FOR MANUFACTURING SUCH A STRUCTURE
WO2002015244A2 (en) *	2000-08-16	2002-02-21	Massachusetts Institute Of Technology	Process for producing semiconductor article using graded expitaxial growth

2003
- 2003-05-07 JP JP2003128917A patent/JP4532846B2/en not_active Expired - Fee Related
2004
- 2004-04-27 TW TW093111750A patent/TWI259514B/en not_active IP Right Cessation
- 2004-04-28 CN CNA2007101812355A patent/CN101145509A/en active Pending
- 2004-04-28 EP EP04730068A patent/EP1620880A4/en not_active Withdrawn
- 2004-04-28 CN CNB2004800006869A patent/CN100358104C/en not_active Expired - Fee Related
- 2004-04-28 KR KR1020057020457A patent/KR100725141B1/en not_active Expired - Fee Related
- 2004-04-28 WO PCT/JP2004/006178 patent/WO2004100233A1/en active Application Filing

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