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JP2004253786A - Joint structure of ceramics - Google Patents

Joint structure of ceramics Download PDF

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JP2004253786A
JP2004253786A JP2004006265A JP2004006265A JP2004253786A JP 2004253786 A JP2004253786 A JP 2004253786A JP 2004006265 A JP2004006265 A JP 2004006265A JP 2004006265 A JP2004006265 A JP 2004006265A JP 2004253786 A JP2004253786 A JP 2004253786A
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joined
ceramic member
ceramic
metal
joining
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JP4321857B2 (en
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Tomoyuki Fujii
知之 藤井
Akiyoshi Hattori
亮誉 服部
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NGK Insulators Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a joint structure in which a crack hardly occurs during a heat cycle. <P>SOLUTION: The joint structure comprises a ceramic member 1, a metal joined member 4, a metal fixed member 3 which is fixed on the ceramic member 1 and has an exposed surface 3b which is exposed to a joint surface 1d of the ceramic member, and a joint layer 7 provided between the ceramic member 1, the exposed surface 3b and the joined member 4. The joint layer 7 comprises a thick portion 7a and thin portions 7b. Alternatively, the maximum thickness of the joint layer 7 is 0.15 mm or larger. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

本発明は、セラミック部材と金属製の被接合部材との接合構造に関するものである。   The present invention relates to a joint structure between a ceramic member and a metal member to be joined.

現在、半導体ウエハーの搬送、露光、CVD、スパッタリング等の成膜プロセス、微細加工、洗浄、エッチング、ダイシング等の工程において、半導体ウエハーを吸着し、保持するために、静電チャックが使用されている。こうした静電チャックの基材として、緻密質セラミックスが注目されている。特に半導体製造装置においては、エッチングガスやクリーニングガスとして、ClF3等のハロゲン系腐食性ガスを多用する。また、半導体ウエハーを保持しつつ、急速に加熱し、冷却させるためには、静電チャックの基材が高い熱伝導性を備えていることが望まれる。また、急激な温度変化によって破壊しないような耐熱衝撃性を備えていることが望まれる。緻密な窒化アルミニウムおよびアルミナは、前記のようなハロゲン系腐食性ガスに対して高い耐食性を備えている。 At present, electrostatic chucks are used to adsorb and hold semiconductor wafers in processes such as transporting semiconductor wafers, film forming processes such as exposure, CVD, and sputtering, fine processing, cleaning, etching, and dicing. . Dense ceramics have attracted attention as a base material of such an electrostatic chuck. Particularly, in a semiconductor manufacturing apparatus, a halogen-based corrosive gas such as ClF 3 is frequently used as an etching gas or a cleaning gas. In addition, in order to rapidly heat and cool the semiconductor wafer while holding it, it is desired that the base material of the electrostatic chuck has high thermal conductivity. It is also desired that the material has a thermal shock resistance that does not cause breakage due to a rapid temperature change. Dense aluminum nitride and alumina have high corrosion resistance to the above-mentioned halogen-based corrosive gases.

また、半導体製造装置の分野において、プラズマを発生させるための高周波電極を内蔵したサセプターが実用化されているが、こうした高周波電力発生装置の分野においても、窒化アルミニウムや緻密質アルミナの基材中に金属電極を埋設している。更に、半導体製造装置の分野において、各プロセス中、ウエハーの温度を制御するために、窒化アルミニウムやアルミナ基材中に金属抵抗体を埋設したセラミックスヒーターも実用化されている。   In the field of semiconductor manufacturing equipment, a susceptor having a built-in high-frequency electrode for generating plasma has been put to practical use. The metal electrode is buried. Furthermore, in the field of semiconductor manufacturing equipment, ceramic heaters in which a metal resistor is embedded in an aluminum nitride or alumina base material to control the temperature of a wafer during each process have been put to practical use.

これらの各装置においては、窒化アルミニウム等のセラミック基材中に金属電極を埋設し、外部の電力供給用コネクターに対して金属電極を電気的に接続する必要がある。しかし、こうした接続部分は、酸化性雰囲気下、更には腐食性ガス雰囲気下で、非常な高温と低温との熱サイクルにさらされる。このような悪条件下においても、長期間高い接合強度と良好な電気的接続とを保持することが望まれている。   In each of these devices, it is necessary to embed a metal electrode in a ceramic substrate such as aluminum nitride and electrically connect the metal electrode to an external power supply connector. However, these joints are subjected to very high and low temperature thermal cycles in an oxidizing atmosphere and even in a corrosive gas atmosphere. It is desired to maintain high bonding strength and good electrical connection for a long time even under such bad conditions.

また、本出願人は、特許文献1において、コネクターと金属電極との接続構造において、金属部材とセラミック部材の間に低熱膨張導体を挿入することで、残留応力緩和を図ることを開示した。また、本出願人は、特許文献2において、特許文献1記載の接合構造を改良し、金、白金、パラジウムを含む軟質の合金ろう材を使用することで、ろう材の耐酸化性を向上させ、かつ残留応力を一層緩和することを開示した。
特開平10−209255号公報 特開平11−12053号公報
In addition, the present applicant has disclosed in Patent Document 1 that in a connection structure between a connector and a metal electrode, a low thermal expansion conductor is inserted between a metal member and a ceramic member to reduce residual stress. Further, in Patent Document 2, the present applicant has improved the joining structure described in Patent Document 1 and improved the oxidation resistance of the brazing material by using a soft alloy brazing material containing gold, platinum, and palladium. And further alleviate the residual stress.
JP-A-10-209255 JP-A-11-12053

しかし、上述のような接合部分を有するヒーターや静電チャックを量産する過程で次の問題が生ずる場合があった。即ち、前記接合構造を製造する際には、低熱膨張導体とセラミック部材表面との間に金属ろう材、例えば金合金ろう材を設置し、ろう材を加熱して溶融させ、セラミック部材と低熱膨張導体との各表面を濡らし、ろう接合する。しかし、この際に接合層の厚さがばらつく傾向が見られた。これは、セラミック部材の表面が比較的に濡れにくいために、溶融後のろう材が接合層に留まらない傾向があるためである。そして溶融ろう材が接合部分から外部へと漏れだすのに際して、接合部分に留まる溶融ろう材の量を正確に制御することは困難である。この結果、接合層の厚さにバラツキが生じ、例えば厚さが0.05mm以下に低下した。そして、接合層の厚さが薄いと、熱サイクルが加わったときに、接合層とセラミック部材との接合界面において多大な応力が加わり、セラミック部材や接合層にクラックが生成し、不良品となることがあった。   However, in the process of mass-producing a heater or an electrostatic chuck having the above-described joints, the following problem may occur. That is, when manufacturing the joining structure, a metal brazing material, for example, a gold alloy brazing material is installed between the low thermal expansion conductor and the surface of the ceramic member, and the brazing material is heated and melted, and the ceramic member and the low thermal expansion. Wet each surface with the conductor and join it by brazing. However, at this time, the thickness of the bonding layer tended to vary. This is because the surface of the ceramic member is relatively hard to wet, so that the brazing material after melting tends not to remain in the bonding layer. When the molten brazing material leaks out of the joining portion, it is difficult to accurately control the amount of the molten brazing material remaining at the joining portion. As a result, the thickness of the bonding layer varied, and for example, the thickness was reduced to 0.05 mm or less. If the thickness of the bonding layer is small, a large stress is applied at the bonding interface between the bonding layer and the ceramic member when a thermal cycle is applied, and cracks are generated in the ceramic member and the bonding layer, resulting in defective products. There was something.

本発明の課題は、セラミック部材、金属部材、セラミック部材に固定されており、セラミック部材の接合面に露出する露出面を有する金属製の固定部材、および接合層を備える接合構造において、熱サイクル印加時にクラックが発生しにくいような構造を提供することである。   An object of the present invention is to provide a ceramic member, a metal member, a metal fixing member having an exposed surface fixed to the ceramic member and having an exposed surface exposed to a bonding surface of the ceramic member, and a bonding structure including a bonding layer. An object of the present invention is to provide a structure in which cracks are less likely to occur.

本発明は、セラミック部材、金属製の被接合部材部材、セラミック部材に固定されており、セラミック部材の接合面に露出する露出面を有する金属製の固定部材、およびセラミック部材および露出面と被接合部材との間に設けられている接合層を備えており、接合層が肉厚部と肉薄部とを備えていることを特徴とする。   The present invention relates to a ceramic member, a metal member to be joined, a metal fixing member fixed to the ceramic member and having an exposed surface exposed at the joining surface of the ceramic member, and a ceramic member and a member joined to the exposed surface. It is provided with a joining layer provided between members, and the joining layer is provided with a thick part and a thin part.

本発明者は、上述した接合層およびセラミック部材のクラック生成の理由について検討したところ、接合層の厚さの小さい領域が主要原因となっていることを見いだした。そして、この知見に立ち、接合層に予め肉厚部と肉薄部とが併存するような設計を採用することにより、接合層中に確実に肉厚部を確保することを想到した。即ち、こうした設計であれば、溶融したろう材がセラミック部材表面に溜まりにくい材質である場合にも、所定厚さの肉厚部を接合層内に確保することができる。これによって、主として肉厚部において、熱サイクルに起因する接合部分への過大な応力を緩和することができ、熱サイクル印加時にクラックが発生しにくいような構造を提供することができる。   The inventor of the present invention has examined the reason for the generation of cracks in the bonding layer and the ceramic member described above, and has found that the region where the thickness of the bonding layer is small is the main cause. Based on this finding, the present inventors have conceived of ensuring a thick portion in the bonding layer by adopting a design in which a thick portion and a thin portion coexist in the bonding layer in advance. That is, with such a design, even when the molten brazing material is a material that does not easily accumulate on the surface of the ceramic member, a thick portion having a predetermined thickness can be secured in the bonding layer. Thereby, it is possible to relieve the excessive stress to the joint part due to the thermal cycle mainly in the thick part, and it is possible to provide a structure in which a crack is hardly generated when the thermal cycle is applied.

また、本発明は、セラミック部材、金属製の被接合部材、セラミック部材に固定されており、セラミック部材の接合面に露出する露出面を有する金属製の固定部材、およびセラミック部材および露出面と被接合部材との間に設けられている接合層を備えており、接合層の最大厚さが0.15mm以上であることを特徴とする。   Further, the present invention provides a ceramic member, a metal member to be joined, a metal fixing member fixed to the ceramic member and having an exposed surface exposed at the joining surface of the ceramic member, and a ceramic member and the exposed surface and the metal member. A bonding layer provided between the bonding member and the bonding member is provided, and the maximum thickness of the bonding layer is 0.15 mm or more.

本発明者は、前記の知見に立ち、熱サイクル印加時に接合部分のクラック生成を抑制する上で、接合層の最大厚さをどの程度にするべきかを検討した。この結果、接合層の最大厚さを0.15mm以上とすることによって、熱サイクル印加時の接合部分のクラック生成を著しく抑制できることを見いだした。   The present inventor has studied the maximum thickness of the bonding layer to suppress the generation of cracks in the bonding portion when applying a thermal cycle, based on the above findings. As a result, it has been found that by setting the maximum thickness of the bonding layer to 0.15 mm or more, it is possible to remarkably suppress the generation of cracks at the bonding portion when applying a heat cycle.

以下、適宜図面を参照しつつ、本発明を更に詳細に説明する。図1は、本発明の一実施形態に係る接合構造を示す断面図である。例えば略円盤形状のセラミック部材1の内部に電極2が埋設されている。電極2は、例えば金網ないしメッシュによって形成されている。   Hereinafter, the present invention will be described in more detail with reference to the drawings as appropriate. FIG. 1 is a sectional view showing a joint structure according to an embodiment of the present invention. For example, an electrode 2 is embedded inside a substantially disk-shaped ceramic member 1. The electrode 2 is formed of, for example, a wire mesh or a mesh.

部材2の背面1a側には凹部1bが設けられている。部材1中には網状の電極2が埋設されており、かつモリブデンまたはモリブデン合金からなる固定部材3が埋設されている。固定部材3の一方の表面3bが孔1bの底面1dに露出しており、固定部材3の他方の表面3aが金属電極2に対して接触している。1cは凹部1bの側面である。   On the back surface 1a side of the member 2, a concave portion 1b is provided. A reticulated electrode 2 is embedded in the member 1 and a fixing member 3 made of molybdenum or a molybdenum alloy is embedded therein. One surface 3b of the fixing member 3 is exposed at the bottom surface 1d of the hole 1b, and the other surface 3a of the fixing member 3 is in contact with the metal electrode 2. 1c is a side surface of the concave portion 1b.

凹部1bの中に、例えば円盤形状の被接合部材4が収容され、設置されている。被接合部材4の底面4cは、セラミック部材1の接合面1dおよび固定部材3の接合面3bと対向している。本例では、被接合部材4の底面の周縁部にリング状突起4dが形成されており、リング状突起4dの先端面にリング状の底面4cが形成されている。そして、リング状突起4dの内側には円形凹部4bが形成されている。被接合部材4とセラミック部材1および固定部材3との間には接合層7が設けられている。接合層7を構成する接合材は、底面4cとセラミック部材2との間に介在し、かつ凹部4bの内部に充填されている。この結果、接合層7は、相対的に厚さの大きい円形の肉厚部7aと、相対的に厚さの小さいリング状の肉薄部7bとを有する。   In the recess 1b, for example, a member 4 to be joined having a disk shape is accommodated and installed. The bottom surface 4c of the member 4 to be joined faces the joining surface 1d of the ceramic member 1 and the joining surface 3b of the fixed member 3. In this example, a ring-shaped projection 4d is formed on the peripheral edge of the bottom surface of the member 4 to be joined, and a ring-shaped bottom surface 4c is formed on the tip end surface of the ring-shaped projection 4d. A circular recess 4b is formed inside the ring-shaped projection 4d. A bonding layer 7 is provided between the member 4 to be bonded and the ceramic member 1 and the fixed member 3. The bonding material forming the bonding layer 7 is interposed between the bottom surface 4c and the ceramic member 2 and is filled in the recess 4b. As a result, the bonding layer 7 has a circular thick portion 7a having a relatively large thickness and a ring-shaped thin portion 7b having a relatively small thickness.

電力供給部材5は、セラミック部材1外の本体部分5c、フランジ部5dおよび凹部1b内の先端部分5bを備えている。先端部分5bの端面5aと被接合部材4の端面4aとが、好ましくはろう材からなる導電性接合層10によって接合されている。   The power supply member 5 includes a main body portion 5c outside the ceramic member 1, a flange portion 5d, and a tip portion 5b inside the concave portion 1b. The end face 5a of the tip portion 5b and the end face 4a of the member 4 to be joined are joined by a conductive joining layer 10 preferably made of a brazing material.

図2の例においては、被接合部材4Aの周縁部には、リング状の突起4dが形成されており、リング状突起4dの内側に円形凹部4bが形成されて
いる。これとともに、リング状突起4dの外側にリング状の凹部 ないし段差部4eが形成されている。
In the example of FIG. 2, a ring-shaped projection 4d is formed on the peripheral edge of the member 4A to be joined, and a circular recess 4b is formed inside the ring-shaped projection 4d. At the same time, a ring-shaped recess or step 4e is formed outside the ring-shaped projection 4d.

そして、被接合部材4Aとセラミック部材2および固定部材3との間に接合層7Aが設けられている。接合層7Aは、円形の肉厚部7a、肉厚部7aを包囲するリング状の肉薄部7b、および肉薄部7bを包囲するリング状の肉厚部7cを備えている。   Further, a bonding layer 7A is provided between the member to be bonded 4A, the ceramic member 2 and the fixing member 3. The bonding layer 7A includes a circular thick portion 7a, a ring-shaped thin portion 7b surrounding the thick portion 7a, and a ring-shaped thick portion 7c surrounding the thin portion 7b.

図3の例では、図1のの接合構造において、更に筒状の雰囲気保護体11が設けられている。即ち、固定部材4および電力供給部材5の先端部5bが、筒状の雰囲気保護体11の内側に収容されている。そして、雰囲気保護体11の末端は接合層7dに接触し、セラミック部材2へと接合されている。   In the example of FIG. 3, a cylindrical atmosphere protection body 11 is further provided in the joining structure of FIG. That is, the distal end portion 5b of the fixing member 4 and the power supply member 5 is housed inside the cylindrical atmosphere protection body 11. The end of the atmosphere protector 11 contacts the bonding layer 7d and is bonded to the ceramic member 2.

本発明においては、接合層7、7Aが、肉厚部7a、7cと、肉薄部7bとを有する。この際、肉厚部の厚さtCは、接合部分におけるクラック防止という観点からは、0.15mm以上であることが好ましく、0.2mm以上であることが更に好ましく、0.5mm以上であることが一層好ましい。肉厚部の厚さtCの上限は特にないが、接合強度の観点からは、1.0mm以下が好ましい。   In the present invention, the bonding layers 7 and 7A have thick portions 7a and 7c and thin portions 7b. At this time, the thickness tC of the thick portion is preferably 0.15 mm or more, more preferably 0.2 mm or more, and more preferably 0.5 mm or more, from the viewpoint of preventing cracks at the joining portion. Is more preferred. Although there is no particular upper limit on the thickness tC of the thick portion, it is preferably 1.0 mm or less from the viewpoint of bonding strength.

肉薄部7bの厚さtDは、接合強度を大きくするという観点からは、0.01mm以上が好ましい。肉薄部7bの厚さtDの上限は特になく、肉厚部の厚さよりも小さければよい。ただし、肉薄部の厚さtDは、接合材によるセラミック部材1の濡れ易さによって制限を受けるので、ある程度以上大きくすることは難しい。このため、tDは通常は1.0mm以下であり、多くの場合0.5mm以下である。   The thickness tD of the thin portion 7b is preferably 0.01 mm or more from the viewpoint of increasing the bonding strength. There is no particular upper limit on the thickness tD of the thin portion 7b, and it is sufficient that the thickness tD be smaller than the thickness of the thick portion. However, the thickness tD of the thin portion is limited by the ease of wetting of the ceramic member 1 by the bonding material, and thus it is difficult to increase the thickness tD to a certain degree or more. For this reason, tD is usually 1.0 mm or less, and in many cases, 0.5 mm or less.

tC−tDは、接合部分におけるクラック防止という観点からは、0.15mm以上であることが好ましく、0.2mm以上であることが更に好ましく、0.5mm以上とすることが一層好ましい。tC−tDの上限は特にないが、接合強度の観点からは、1.0mm以下が好ましい。   tC-tD is preferably 0.15 mm or more, more preferably 0.2 mm or more, and even more preferably 0.5 mm or more, from the viewpoint of preventing cracks at the joint. Although there is no particular upper limit for tC-tD, it is preferably 1.0 mm or less from the viewpoint of bonding strength.

また、本発明においては、接合層7、7Aの最大厚さを0.15mm以上とすることができる。この場合には、最大厚さを0.2mm以上とすることが更に好ましく、0.5mm以上とすることが一層好ましい。   In the present invention, the maximum thickness of the bonding layers 7 and 7A can be set to 0.15 mm or more. In this case, the maximum thickness is more preferably 0.2 mm or more, and even more preferably 0.5 mm or more.

好適な実施形態においては、図2に示すように、肉厚部7cが被接合部材7Aの接合面の周縁部に設けられている。接合部分のコーナー部分には応力が集中し易いので、肉厚部7cを被接合部材7Aの接合面の周縁部に設けることによって、コーナー部に加わる応力を緩和できる。   In a preferred embodiment, as shown in FIG. 2, a thick portion 7c is provided on the peripheral edge of the joining surface of the member 7A to be joined. Since stress is likely to concentrate on the corner portion of the joining portion, the stress applied to the corner portion can be reduced by providing the thick portion 7c on the periphery of the joining surface of the member 7A to be joined.

肉厚部の幅Bの接合層の幅Aに対する割合B/Aは、本発明の観点からは、0.6以上であることが好ましく、0.7以上であることが更に好ましい。また、B/Aは1.0未満であるが、本発明の観点からは0.95以下であることが更に好ましい。   From the viewpoint of the present invention, the ratio B / A of the width B of the thick portion to the width A of the bonding layer is preferably 0.6 or more, and more preferably 0.7 or more. Further, B / A is less than 1.0, but is more preferably 0.95 or less from the viewpoint of the present invention.

肉厚部、肉薄部の形成方法は特に限定されない。好適な実施形態においては、被接合部材4の接合面側に突起4dを設けるか、あるいは固定部材3の接合面3bに突起を設けることによって、突起部上に肉薄部を設け、突起部の横に肉厚部を設けることができる。特に好ましくは、被接合部材4の接合面側に突起部を設ける。この場合には、突起部4dは、被接合部材4と一体であることが好ましいが、別体のスペーサーであってもよい。また、突起部4dの材質と被接合部材4の材質とは同じであることが好ましいが、異なっていても良い。突起部4dが被接合部材と別体である場合には、材質は融点が接合温度より100℃以上高く、溶融したロウ材に多大に溶解しないことが必要で、また低熱膨張であることが好ましく、以下の材質を例示できる。
即ち、金属系ではFe−Ni合金、Fe−Ni−Co合金、Mo、Wなど、セラミックス系ではアルミナ、窒化アルミニウム、炭化ケイ素、窒化ホウ素などである。
The method for forming the thick part and the thin part is not particularly limited. In a preferred embodiment, a projection 4d is provided on the joining surface side of the member 4 to be joined, or a projection is provided on the joining surface 3b of the fixing member 3, so that a thin portion is provided on the projection, and a lateral portion of the projection is provided. Can be provided with a thick portion. Particularly preferably, a projection is provided on the joining surface side of the member 4 to be joined. In this case, the projection 4d is preferably integrated with the member 4 to be joined, but may be a separate spacer. Further, the material of the projection 4d and the material of the member to be joined 4 are preferably the same, but may be different. When the projection 4d is separate from the member to be joined, the material is required to have a melting point higher than the joining temperature by 100 ° C. or more, not to be significantly dissolved in the molten brazing material, and to have low thermal expansion. The following materials can be exemplified.
That is, a metal-based material is Fe-Ni alloy, Fe-Ni-Co alloy, Mo, W, and the like, and a ceramic-based material is alumina, aluminum nitride, silicon carbide, boron nitride, and the like.

セラミック部材としては、セラミック基体中に抵抗発熱体を埋設したヒーター、セラミック基体中に静電チャック用電極を埋設した静電チャック、セラミック基体中に抵抗発熱体と静電チャック用電極とを埋設した静電チャック付きヒーター、セラミック基体中にプラズマ発生用電極を埋設した高周波発生用電極装置、セラミック基体中にプラズマ発生用電極および抵抗発熱体を埋設した高周波発生用電極装置を例示できる。これらのセラミックス部材においては、セラミックス部材内部の電極に対して電力を供給するための電力供給部材5が必要である。   As the ceramic member, a heater in which a resistance heating element is embedded in a ceramic substrate, an electrostatic chuck in which an electrode for electrostatic chuck is embedded in a ceramic substrate, and a resistance heating element and an electrode for electrostatic chuck are embedded in a ceramic substrate. Examples thereof include a heater with an electrostatic chuck, a high-frequency generation electrode device in which a plasma generation electrode is embedded in a ceramic substrate, and a high-frequency generation electrode device in which a plasma generation electrode and a resistance heating element are embedded in a ceramic substrate. In these ceramic members, a power supply member 5 for supplying power to the electrodes inside the ceramic member is required.

固定部材3の材質は限定されないが、高融点金属で形成することが好ましい。こうした高融点金属としては、タンタル,タングステン,モリブデン,白金,レニウム、ハフニウム及びこれらの合金を例示できる。   The material of the fixing member 3 is not limited, but is preferably formed of a high melting point metal. Examples of such a high melting point metal include tantalum, tungsten, molybdenum, platinum, rhenium, hafnium and alloys thereof.

接合層を構成する接合材は限定されない。しかし、接合層における応力の緩和という観点からは、接合層の主成分が、金、白金およびパラジウムからなる群より選ばれた一種以上の金属であることが好ましい。この金属は、接合層の構成金属の50重量%以上を占めており、70重量%以上占めていることが好ましく、更には80重量%以上占めていることが好ましく、90重量%以上占めていることが一層好ましい。これらの中でも耐酸化性の点で金がもっとも好ましい。   The joining material forming the joining layer is not limited. However, from the viewpoint of relaxing the stress in the bonding layer, it is preferable that the main component of the bonding layer is at least one metal selected from the group consisting of gold, platinum, and palladium. This metal accounts for 50% by weight or more of the constituent metal of the bonding layer, preferably 70% by weight or more, more preferably 80% by weight or more, and preferably 90% by weight or more. Is more preferable. Among them, gold is most preferable in terms of oxidation resistance.

接合層中には、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブおよびマグネシウムからなる群より選ばれた一種以上の活性金属を含有させることが好ましく、これによってセラミックスに対する接合層の密着性、接合力を高めることができる。この割合は5重量%以下であることが好ましい。   The bonding layer preferably contains at least one active metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, and magnesium, thereby increasing the adhesion of the bonding layer to ceramics and the bonding strength. be able to. This ratio is preferably at most 5% by weight.

また、接合層中に、ニッケル、鉄、コバルトなどの合金成分を含有させることができる。この場合には、合金成分の割合は、50重量%以下が好ましく、20重量%以下が特に好ましく、10重量%以下が一層好ましい。   In addition, alloy components such as nickel, iron, and cobalt can be contained in the bonding layer. In this case, the proportion of the alloy component is preferably 50% by weight or less, particularly preferably 20% by weight or less, and further preferably 10% by weight or less.

接合層中には、Si、Al、CuおよびInからなる群より選ばれた一種以上の第三成分を含有させることができる。   One or more third components selected from the group consisting of Si, Al, Cu and In can be contained in the bonding layer.

好適な実施形態においては、セラミック部材中に金属電極とモリブデンまたはモリブデン合金製の端子(固定部材)3とが埋設されており、セラミック部材の接合面に端子3の露出部分3bが露出している。   In a preferred embodiment, a metal electrode and a terminal (fixing member) 3 made of molybdenum or a molybdenum alloy are embedded in a ceramic member, and an exposed portion 3b of the terminal 3 is exposed on a joint surface of the ceramic member. .

また、本発明において、セラミック部材の凹部1b内に筒状雰囲気保護体11を挿入し、筒状雰囲気保護体11の内側に被接合部材4を挿入する。   In the present invention, the cylindrical atmosphere protection body 11 is inserted into the concave portion 1b of the ceramic member, and the member 4 to be joined is inserted inside the cylindrical atmosphere protection body 11.

被接合部材4は、電力供給部材であってよいが、好ましくは低熱膨張導体である。低熱膨張導体とは、熱膨張率が少なくとも400℃以下で8.0×10−6/℃以下の材質からなる導体を言う。低熱膨張導体の材質としては、具体的には、モリブデン、タングステン、モリブデン−タングステン合金、タングステン−銅−ニッケル合金、コバールが好ましい。雰囲気保護体の材質は、純ニッケル、ニッケル基耐熱合金、金、白金、銀、およびこれらの合金とすることが好ましい。 The member to be joined 4 may be a power supply member, but is preferably a low thermal expansion conductor. The low thermal expansion conductor is a conductor made of a material having a coefficient of thermal expansion of at least 400 ° C. and 8.0 × 10 −6 / ° C. or less. Specifically, the material of the low thermal expansion conductor is preferably molybdenum, tungsten, a molybdenum-tungsten alloy, a tungsten-copper-nickel alloy, or Kovar. The material of the atmosphere protector is preferably pure nickel, a nickel-base heat-resistant alloy, gold, platinum, silver, or an alloy thereof.

電力供給部材の材質は、雰囲気に対する耐食性の高い金属であることが好ましく、具体的には、純ニッケル、ニッケル基耐熱合金、金、白金、銀、およびこれらの合金が好ましい。   The material of the power supply member is preferably a metal having high corrosion resistance to the atmosphere, and specifically, pure nickel, a nickel-based heat-resistant alloy, gold, platinum, silver, and alloys thereof are preferable.

図4、図5は、本発明の他の変形例を示す断面図である。図4の例においては、発熱体2がコイルスプリング状に巻回されている。また、固定部材3Aには突起部3cが設けられており、突起部3cの側周面3dに対して、発熱体2の端部2aが巻き付けられ、これによって発熱体2が固定部材3に対して電気的に接続されている。むろん、発熱体2と固定部材との電気的接続方法は限定されない。   4 and 5 are cross-sectional views showing another modification of the present invention. In the example of FIG. 4, the heating element 2 is wound in a coil spring shape. The fixing member 3A is provided with a projection 3c, and the end 2a of the heating element 2 is wound around the side peripheral surface 3d of the projection 3c. And are electrically connected. Of course, the method of electrically connecting the heating element 2 and the fixing member is not limited.

図5の例においても、固定部材3Bに突起部3cが設けられており、突起部3cの側周面3dに対して、発熱体2の端部2aが巻き付けられている。これに加えて、固定部材3の接合面3b側に凹部3eが形成されている。凹部3eに対応する位置において、被接合部材4Bの接合面側に突起部4gが設けられている。本例では、突起部4gの先端が、固定部材3の凹部3e内に挿入されている。突起部4gと凹部3e壁面との間に、接合層7eが形成されている。   In the example of FIG. 5 as well, the protrusion 3c is provided on the fixing member 3B, and the end 2a of the heating element 2 is wound around the side peripheral surface 3d of the protrusion 3c. In addition, a recess 3e is formed on the joint surface 3b side of the fixing member 3. At a position corresponding to the concave portion 3e, a projection 4g is provided on the joining surface side of the member 4B to be joined. In this example, the tip of the projection 4g is inserted into the recess 3e of the fixing member 3. A bonding layer 7e is formed between the protrusion 4g and the wall surface of the recess 3e.

このように、被接合部材4側の突起部4gを固定部材3の凹部3e内に挿入し、突起部4gの外壁面と凹部3eの内壁面との間にも接合層を設けることによって、接合面積を大きくし、接合強度を一層向上させることができる。   In this manner, the protrusion 4g on the member to be bonded 4 is inserted into the recess 3e of the fixing member 3, and the bonding layer is provided between the outer wall surface of the protrusion 4g and the inner wall surface of the recess 3e. The area can be increased, and the bonding strength can be further improved.

(接合構造の製造)
図3に示す接合構造を形成した。具体的には、窒化アルミニウム粉末を一軸加圧成形することによって円盤状成形体を製造した。金網2は、直径φ0.12mmのモリブデン線を、1インチ当たり50本の密度で編んだ金網を使用した。金網2を窒化アルミニウムの予備成形体中に埋設した。これと共に、直径3mm、高さ1.5mmの円柱状のモリブデン製端子3を窒化アルミニウムの予備成形体中に埋設した。この予備成形体を型内に設置し、カーボンフォイル内に密封し、1950℃の温度、200kg/cm2の圧力および2時間の保持時間で、ホットプレス法によって焼成し、焼結体を得た。この焼結体の相対密度は、98.0%以上であった。得られた焼結体の背面側から、図1に示すように、マシニングセンターによって凹部1bを形成し、セラミック部材の試験片を作製した。ただし、この試験片の外形は直方体であり、寸法は20mm×20mm×厚さ17mmである。
(Manufacture of joint structure)
The bonding structure shown in FIG. 3 was formed. Specifically, a disc-shaped compact was manufactured by uniaxial pressing of aluminum nitride powder. As the wire mesh 2, a wire mesh obtained by knitting molybdenum wires having a diameter of 0.12 mm at a density of 50 wires per inch was used. The wire mesh 2 was embedded in a preform of aluminum nitride. At the same time, a cylindrical molybdenum terminal 3 having a diameter of 3 mm and a height of 1.5 mm was embedded in the aluminum nitride preform. This preform was placed in a mold, sealed in a carbon foil, and fired by a hot press method at a temperature of 1950 ° C., a pressure of 200 kg / cm 2 and a holding time of 2 hours to obtain a sintered body. . The relative density of this sintered body was 98.0% or more. As shown in FIG. 1, a recess 1b was formed by a machining center from the back side of the obtained sintered body, and a test piece of a ceramic member was produced. However, the outer shape of this test piece was a rectangular parallelepiped, and the dimensions were 20 mm × 20 mm × 17 mm in thickness.

端子3を研削加工し、表面の酸化物および炭化物を除去し、洗浄、乾燥した。次いで、端子3上に、金箔(直径φ5.6mm、厚さ0.2mm)およびAu−18%Ni箔(直径φ5.6mm、厚さ0.1mm)を設置した。この周囲に雰囲気保護体11を設置した。また、金属箔上に低熱膨張導体4として直径φ4.7mm、厚さ2.2mmのコバール板を設置した。低熱膨張導体4の上に、Au−18wt%Ni合金箔(直径φ4.7mm、厚さ0.2mm)を設置し、ニッケル製のロッド状の電力供給部材5をこの上に載せた。   The terminal 3 was ground to remove oxides and carbides on the surface, washed and dried. Next, a gold foil (diameter φ5.6 mm, thickness 0.2 mm) and an Au-18% Ni foil (diameter φ5.6 mm, thickness 0.1 mm) were placed on the terminal 3. Atmosphere protector 11 was set around this. In addition, a Kovar plate having a diameter of 4.7 mm and a thickness of 2.2 mm was installed as a low thermal expansion conductor 4 on the metal foil. An Au-18 wt% Ni alloy foil (diameter φ4.7 mm, thickness 0.2 mm) was placed on the low thermal expansion conductor 4, and a nickel rod-shaped power supply member 5 was placed thereon.

こうして得られた組み立て体に500gの荷重を加えた状態で、1000℃で10分間、真空中で加熱し、図3に示す接合構造を製造した。   The assembly thus obtained was heated in a vacuum at 1000 ° C. for 10 minutes while a load of 500 g was applied thereto, thereby producing a joint structure shown in FIG.

ここで、実施例1においては、凹部4dの深さ(tC−tD)を0.2mmとし、実施例2においては、(tC−tD)を0.5mmとした。実施例3においては、tCを0.2mmとし、かつ端子3と金箔との間にチタン箔(直径φ5.6mm、厚さ0.01mm)を設置した。比較例1においては、低熱膨張導体4の底面を平坦面とし、凹部4dを設けなかった。   Here, in Example 1, the depth (tC-tD) of the recess 4d was 0.2 mm, and in Example 2, (tC-tD) was 0.5 mm. In Example 3, tC was set to 0.2 mm, and a titanium foil (diameter φ5.6 mm, thickness 0.01 mm) was provided between the terminal 3 and the gold foil. In Comparative Example 1, the bottom surface of the low-thermal-expansion conductor 4 was flat, and the recess 4d was not provided.

こうして得られた各接合構造について、接合後の引張破断荷重(引張強度)を測定し、この結果を表1に示す。   For each of the joint structures thus obtained, the tensile breaking load (tensile strength) after joining was measured, and the results are shown in Table 1.

また、各接合構造について、100℃と700℃との間での熱サイクルを100回加えた。ただし、昇温速度は約20℃/分とし、降温速度は約5℃/分とした。この後、引張破断荷重を測定し、熱サイクル後の引張破断荷重として表1に示す。   Further, a heat cycle between 100 ° C. and 700 ° C. was applied 100 times for each joint structure. However, the heating rate was about 20 ° C./min, and the cooling rate was about 5 ° C./min. Thereafter, the tensile rupture load was measured and is shown in Table 1 as the tensile rupture load after the heat cycle.

Figure 2004253786
Figure 2004253786

熱サイクル試験後に引張強度を測定すると、比較例1では強度劣化するのに対し、実施例1、2、3では強度低下が見られない。また、実施例3においては、活性金属箔(チタン箔)をも併用することによって、ろう材がセラミック部材1とも強固に接合するので、破断荷重が一層向上した。   When the tensile strength is measured after the heat cycle test, the strength is deteriorated in Comparative Example 1, whereas no decrease is observed in Examples 1, 2, and 3. Further, in Example 3, the active material foil (titanium foil) was also used, so that the brazing material was firmly joined to the ceramic member 1, so that the breaking load was further improved.

なお、図6は、実施例1の接合構造を示す光学顕微鏡写真である。図6においては、厚さが均一な肉厚部が生成していることが分かる。   FIG. 6 is an optical microscope photograph showing the joint structure of Example 1. In FIG. 6, it can be seen that a thick portion having a uniform thickness is generated.

以上述べたように、本発明によれば、セラミック部材、金属部材、セラミック部材に固定されており、セラミック部材の接合面に露出する露出面を有する金属製の固定部材、および接合層を備える接合構造において、熱サイクル印加時にクラックが発生しにくい構造を提供できる。   As described above, according to the present invention, a ceramic member, a metal member, a metal fixing member fixed to the ceramic member and having an exposed surface exposed to a bonding surface of the ceramic member, and a bonding including a bonding layer In the structure, it is possible to provide a structure in which cracks are less likely to occur when a heat cycle is applied.

本発明の一実施形態に係る接合構造を概略的に示す断面図であり、接合層7に肉厚部7aと肉薄部7bとが設けられている。FIG. 2 is a cross-sectional view schematically illustrating a bonding structure according to an embodiment of the present invention, in which a bonding layer 7 is provided with a thick portion 7a and a thin portion 7b. 本発明の他の実施形態に係る接合構造を概略的に示す断面図であり、接合層7Aに肉厚部7a、7cと肉薄部7bとが設けられている。It is sectional drawing which shows roughly the joining structure concerning other embodiment of this invention, and the thick part 7a, 7c and the thin part 7b are provided in 7 A of joining layers. 本発明の更に他の実施形態に係る接合構造を概略的に示す断面図であり、被接合部材4の周囲に筒状の雰囲気保護体11が設置されている。It is sectional drawing which shows schematically the joining structure which concerns on still another embodiment of this invention, and the cylindrical atmosphere protection body 11 is installed around the to-be-joined member 4. As shown in FIG. 本発明の実施形態の一例であり、発熱体がコイルスプリング状であり、固定部材3Aに巻きつけられている。This is an example of an embodiment of the present invention, in which the heating element has a coil spring shape and is wound around the fixing member 3A. 本発明の実施形態の一例であり、固定部材3Bが凹部3eを有しており、これに対応して被接合部材の中央に突起部4gが設けられており、両者の間に接合層7eが設けられている。This is an example of the embodiment of the present invention, in which the fixing member 3B has a concave portion 3e, and a projection 4g is provided at the center of the member to be joined correspondingly, and a joining layer 7e is provided between the two. Is provided. 本発明例に係る接合構造の光学顕微鏡写真である。It is an optical microscope photograph of the joined structure concerning the example of the present invention.

符号の説明Explanation of reference numerals

1 セラミック部材 1a セラミック部材1の底面 2 発熱体 3 固定部材、3A、3B 3b 固定部材3の露出面 4、4A、4B 被接合部材 4b 凹部 4c 底面 4d 突起部 5 電力供給部材(外部部材) 7、7A、7B 接合層 7a、7c 肉厚部 7b 肉薄部 11 筒状の雰囲気保護体 A 接合層の幅 B 肉厚部の幅 tC 肉厚部の厚さ tD 肉薄部の厚さ   Reference Signs List 1 ceramic member 1a bottom surface of ceramic member 1 2 heating element 3 fixing member 3A, 3B 3b exposed surface of fixing member 3 4, 4A, 4B joined member 4b concave portion 4c bottom surface 4d protrusion 5 power supply member (external member) 7 , 7A, 7B joining layer 7a, 7c thick part 7b thin part 11 cylindrical atmosphere protection body A joining layer width B thick part width tC thick part thickness tD thin part thickness

Claims (11)

セラミック部材、金属製の被接合部材、前記セラミック部材に固定されており、前記セラミック部材の接合面に露出する露出面を有する金属製の固定部材、および前記セラミック部材および前記露出面と前記被接合部材との間に設けられている接合層を備えており、前記接合層が肉厚部と肉薄部とを備えていることを特徴とする、セラミックスの接合構造。   A ceramic member, a metal member to be joined, a metal fixing member fixed to the ceramic member and having an exposed surface exposed at the joint surface of the ceramic member, and the metal member to be joined to the ceramic member and the exposed surface. A bonding structure for ceramics, comprising: a bonding layer provided between members; and the bonding layer includes a thick portion and a thin portion. 前記肉厚部の厚さが0.15mm以上であることを特徴とする、請求項1記載の接合構造。   The joining structure according to claim 1, wherein the thickness of the thick portion is 0.15 mm or more. 前記肉厚部が前記被接合部材の接合面の周縁部に設けられていることを特徴とする、請求項1または2記載の接合構造。   The joining structure according to claim 1, wherein the thick portion is provided at a peripheral portion of a joining surface of the member to be joined. 前記被接合部材の接合面に突起部が設けられていることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の接合構造。   The joint structure according to any one of claims 1 to 3, wherein a protrusion is provided on a joint surface of the member to be joined. セラミック部材、金属製の被接合部材、前記セラミック部材に固定されており、前記セラミック部材の接合面に露出する露出面を有する金属製の固定部材、および前記セラミック部材および前記露出面と前記被接合部材との間に設けられている接合層を備えており、前記接合層の最大厚さが0.15mm以上であることを特徴とする、セラミックスの接合構造。   A ceramic member, a metal member to be joined, a metal fixing member fixed to the ceramic member and having an exposed surface exposed at the joint surface of the ceramic member, and the metal member to be joined to the ceramic member and the exposed surface. A bonding structure for ceramics, comprising: a bonding layer provided between members; and a maximum thickness of the bonding layer is 0.15 mm or more. 前記被接合部材が接合されている外部部材を備えていることを特徴とする、請求項1〜5のいずれか一つの請求項に記載の接合構造。   The joining structure according to any one of claims 1 to 5, further comprising an external member to which the member to be joined is joined. 前記接合層の主成分が、金、白金およびパラジウムからなる群より選ばれた一種以上の金属であることを特徴とする、請求項1〜6のいずれか一つの請求項に記載の接合構造。   The joining structure according to any one of claims 1 to 6, wherein a main component of the joining layer is at least one metal selected from the group consisting of gold, platinum and palladium. 前記接合層中に、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブおよびマグネシウムからなる群より選ばれた一種以上の活性金属が含有されていることを特徴とする、請求項1〜7のいずれか一つの請求項に記載の接合構造。   The bonding layer, wherein one or more active metals selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, and magnesium are contained, any one of claims 1 to 7, The joining structure according to claim. 前記セラミック部材に凹部が設けられており、前記被接合部材が前記凹部内に収容されていることを特徴とする、請求項1〜8のいずれか一つの請求項に記載の接合構造。   The joint structure according to any one of claims 1 to 8, wherein a concave portion is provided in the ceramic member, and the member to be bonded is accommodated in the concave portion. 前記凹部内に筒状雰囲気保護体が挿入されており、この筒状雰囲気保護体の内側に前記被接合部材が収容されていることを特徴とする、請求項9記載の接合構造。   The joining structure according to claim 9, wherein a cylindrical atmosphere protection body is inserted into the recess, and the member to be bonded is housed inside the cylindrical atmosphere protection body. 前記セラミック部材に、前記固定部材と電気的に接続された導電性部材が設けられていることを特徴とする、請求項1〜10のいずれか一つの請求項に記載の接合構造。   The joining structure according to claim 1, wherein a conductive member electrically connected to the fixing member is provided on the ceramic member.
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