JP2004252375A - Exposure apparatus and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus having a simple structure which can expose a large area substrate having a periodical exposure pattern such as a liquid crystal at high speed, and to provide an exposure method. <P>SOLUTION: The exposure apparatus is equipped with a plurality of semiconductor lasers 2, a condensing optical system 3 to condense the laser light from the semiconductor lasers 2 onto a glass substrate 4 to be exposed, an XYZ stage 5 mounting the glass substrate 4, and a laser array rotating part 13. The points of condensed light by the condensing optical system 3 are made to scan the glass substrate 4 to expose. The semiconductor lasers 2 are arranged by fixing at equal intervals. The laser array 1 is rotated by the laser array rotating part 13 to vary the angle of the laser array 1 with respect to the scanning direction of the glass substrate 4 so as to control the exposure pitch according to the exposure pattern without controlling the intervals of the semiconductor lasers 2. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus and an exposure method, and more particularly, to an exposure apparatus and an exposure method suitable for exposing a substrate having a large area and a periodic exposure pattern, such as a liquid crystal display. It is.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, as an exposure apparatus for performing a substrate such as a liquid crystal display, an apparatus using a projection exposure method for forming an exposure pattern by projecting a predetermined mask pattern onto a substrate is known. In the case of this projection exposure method, a stepper method that divides the substrate surface into a plurality of blocks and repeats irradiation for each block to expose the entire substrate due to a trade-off between the resolution of the optical system and the exposure area per exposure. Is used.
[0003]
However, with the miniaturization of the exposure pattern, the necessity of miniaturizing the mask pattern has arisen. As a result, mask prices have risen, hindering cost reduction.
[0004]
In addition, the inertia force acting on the stage increases as the size of the substrate increases, but the stepper method repeatedly moves and stops in a short time and with high accuracy. Had become expensive. In the stepper method, it is also conceivable to reduce the number of irradiations by increasing the area that can be exposed at one time, thereby reducing the influence of the irradiation. However, in order to expand the area that can be exposed at one time, it is necessary to use a large-diameter exposure lens, and in addition to the fundamental limitation of resolution and exposure area, it becomes very difficult to manufacture a lens, and as a result, extremely expensive It becomes an exposure device.
[0005]
As a solution to these problems, a proposal has been made that employs a direct drawing method that irradiates a substrate with a converged laser beam or electron beam based on CAD data of a wiring pattern or the like without using a mask to perform exposure. Have been. In this direct writing method, a mask used in the projection exposure method is not required, so that the mask cost is eliminated. Further, unlike the stepper method, the stage is not repeatedly moved and stopped for each block, so that an extremely expensive stage is not required.
[0006]
An example of an exposure apparatus using the direct drawing method is disclosed in Japanese Patent Application Laid-Open No. 62-26819 (Patent Document 1). In the exposure apparatus described in Japanese Patent Application Laid-Open No. Sho 62-26819, after an argon laser beam is split into eight beams as a light source, each of the split laser beams is turned on / off by one ultrasonic modulation element. To form a pattern.
[0007]
Further, as an example in which an exposure apparatus using a direct drawing method is applied to a case where a large area substrate is exposed as in a manufacturing process of a liquid crystal display, for example, JP-A-6-53105 (Patent Document 2) and 224597 (Patent Document 3). In the exposure apparatus described in JP-A-6-53105, a plurality of semiconductor laser light sources are arranged in an array and combined with an inexpensive optical system in an array. The apparatus has an array unit in which a plurality of laser modules (light sources) each having a semiconductor laser or an optical system are mounted in a row, and adjusts a position of the laser module in a column direction based on a pattern to be exposed. Exposure.
[0008]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 62-26819 (Publication date: February 4, 1987)
[0009]
[Patent Document 2]
JP-A-6-53105 (Published February 25, 1994)
[0010]
[Patent Document 3]
Japanese Patent Application Laid-Open No. 2000-214597 (Publication date: August 4, 2000)
[0011]
[Problems to be solved by the invention]
However, the exposure apparatus of Patent Document 1 has a problem that the exposure time is long. Specifically, the exposure apparatus of Patent Literature 1 is provided with an ultrasonic modulation element. However, since the ultrasonic modulation element cannot perform high-speed modulation in principle, it is difficult to increase the scanning speed. The exposure apparatus of Patent Document 2 has a short exposure time, but a light source is fixed on the array, and in order to perform exposure at a desired pitch, the entire array is replaced or a large number of arrays are used as required by the apparatus. There is a problem that must be provided.
[0012]
Further, the exposure apparatus of Patent Document 3 has a problem that the exposure time is long and the configuration is very complicated. Specifically, the exposure apparatus of Patent Document 3 includes thousands of laser modules whose intervals can be adjusted. Then, in order to obtain the target exposure pitch, the interval between the laser modules is adjusted according to the exposure pattern. Therefore, the exposure apparatus of Patent Document 3 requires time for individually adjusting the positions of all the laser modules installed in the array unit. In addition, a configuration for accurately adjusting the position of the laser module is also required. Thus, the exposure apparatus of Patent Document 3 has a very complicated configuration as well as a long exposure time.
[0013]
The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide an exposure apparatus and an exposure method which can perform high-throughput exposure even with a large-area substrate and can be manufactured at a low cost with a simple configuration. Is to do.
[0014]
[Means for Solving the Problems]
The exposure apparatus of the present invention, in order to solve the above problems, in an exposure apparatus that exposes the substrate by irradiating the substrate with light from a plurality of light sources, a light source array in which the light sources are fixedly arranged at equal intervals An optical system for condensing light emitted from a light source array on a substrate and an exposure pitch variable means for adjusting an exposure pitch in accordance with exposure data in which an exposure pattern is stored.
[0015]
According to the above configuration, since the light sources are fixedly arranged at equal intervals in the light source array, the light from the light sources is condensed on the substrate through the optical system as converging points at equal intervals. You. The distance between two straight lines passing through the adjacent light condensing points and parallel to the scanning direction corresponds to the exposure pitch. Since the exposure pitch differs depending on the exposure pattern, it is necessary to change it according to the exposure pattern. According to the above configuration, the exposure pitch variable means adjusts the exposure pitch according to the exposure pitch. Therefore, the light from the light source is always exposed on the substrate as a focal point at a target exposure pitch. Therefore, by scanning the light-converging point on the substrate, a plurality of periodic lines having a target exposure pitch can be exposed on the substrate.
[0016]
As described above, in the above configuration, since the intervals between the light sources are fixedly arranged at equal intervals, it is not necessary to adjust the intervals between the light sources according to the exposure pattern, and it is necessary to provide a configuration for adjusting the intervals. Absent. Therefore, the exposure time can be reduced, and the substrate can be exposed with a simple configuration at an exposure pitch corresponding to the exposure pattern. Therefore, a large-area substrate can be exposed at a high throughput. For example, even when this exposure apparatus is applied to the production of a liquid crystal display, one exposure apparatus can cope with the production of various types of liquid crystal displays having different exposure pitches.
[0017]
In the exposure apparatus of the present invention, the exposure pitch variable means may adjust the exposure pitch by relatively moving the light source array and the substrate.
[0018]
According to the above configuration, the exposure pitch variable unit adjusts the exposure pitch according to the exposure pitch by relatively moving the light source array and the substrate. Thus, the substrate can be exposed at an exposure pitch corresponding to the exposure pattern with a simple configuration without adjusting the distance between the light sources. Note that the exposure pitch changing means may move one or both of the light source array and the substrate.
[0019]
In the exposure apparatus of the present invention, the exposure pitch varying means may include a light source array rotating means for rotating the light source array in a plane parallel to the substrate.
[0020]
According to the above configuration, the light source array is rotated in a plane parallel to the substrate by the exposure pitch variable unit. As a result, the angle between the arrangement direction of the light sources in the light source array and the scanning direction of the substrate changes.
[0021]
For example, when the light sources are arranged perpendicular to the scanning direction, the exposure pitch matches the interval between the light sources. On the other hand, when the light source array is rotated in parallel with the substrate, the arrangement direction of the light sources is inclined with respect to the scanning direction. As a result, a condensing point inclined with respect to the scanning direction is condensed on the substrate. Therefore, the exposure pitch when the light-converging point inclined with respect to the scanning direction is scanned on the substrate is equal to or less than the distance between the light sources.
[0022]
More specifically, when the light sources are arranged perpendicularly to the scanning direction, the condensing points on the substrate before scanning are also arranged perpendicularly to the scanning direction. The exposure pitch corresponds to the distance between two adjacent light-converging points and two parallel lines parallel to the scanning direction. Here, assuming that adjacent light collecting points are points A and B, points A and B are perpendicular to the scanning direction. Therefore, the exposure pitch corresponds to a straight line AB connecting these two points. That is, in this case, the interval (distance) between the converging points and the exposure pitch match.
[0023]
On the other hand, if the light sources are arranged obliquely with respect to the scanning direction, the condensing points on the substrate before scanning also incline with respect to the scanning direction. In this case, in addition to the points A and B described above, a point C is an intersection of a parallel line a passing through the point A and parallel to the scanning direction and a perpendicular line b passing through the point B and perpendicular to the scanning direction. , Triangle ABC is a right-angled triangle. In the triangle ABC, a side perpendicular to the scanning direction corresponds to an exposure pitch. Therefore, the exposure pitch is shorter than the interval between light sources (oblique side).
[0024]
In this manner, by inclining the light source array with respect to the scanning direction, the exposure pitch can be made equal to or less than the interval between the light sources. As a result, the substrate can be exposed without adjusting the interval between the light sources, so that the exposure time can be shortened, and the substrate can be exposed with a simple configuration at an exposure pitch corresponding to the exposure pattern.
[0025]
In the exposure apparatus of the present invention, the light source array rotating means may be configured to rotate the light source array within a range of 90 ° or less.
[0026]
According to the above configuration, the light source array rotating unit limits the range of rotating the light source array to 90 ° or less. That is, the movable range of the light source array is narrowed. Thus, it is possible to reduce the deterioration of the rotation accuracy and improve the accuracy.
[0027]
In the exposure apparatus of the present invention, the light source array scans in a first scanning direction and a second scanning direction that are orthogonal to each other, and the first light source array and the second light source array in which the light source array directions are orthogonal to each other. May be provided.
[0028]
When the first and second scanning directions are scanned only by the first light source array, when the scanning direction is changed from one scanning direction to the other scanning direction, the first light source array is perpendicular to the scanning direction. It is necessary to rotate it.
[0029]
According to the above configuration, the light source array includes the first light source array and the second light source array. For example, scanning in the first scanning direction can be performed using the first light source array, and scanning in the second scanning direction can be performed using the second light source array. That is, since a dedicated light source array is provided for each scanning direction, it is not necessary to rotate the light source array to change the scanning direction. Thereby, the exposure time can be further reduced. Note that the first and second light source arrays may be integrally formed as, for example, a cross-shaped light source array or may have separate configurations as long as the arrangement directions of the light sources are perpendicular to each other.
[0030]
The exposure apparatus of the present invention further includes switching means for switching a light source array used for exposure according to an angle formed between a scanning direction and an arrangement direction of the light sources. A first light source array and a second light source array in which the arrangement direction of the light sources is orthogonal to each other for scanning in the scanning direction or the second scanning direction; It is also possible to adopt a configuration in which the first light source array and the second light source array are switched depending on whether the value is larger than √2 or smaller.
[0031]
According to the above configuration, the switching unit limits the range in which the light source array is rotated to 45 ° or less. Thus, it is possible to further reduce the deterioration of the rotation accuracy and improve the accuracy.
[0032]
For example, in the case of a first light source array in which the arrangement direction of the light sources is perpendicular to the first scanning direction and a second light source array in which the arrangement direction of the light sources is perpendicular to the second scanning direction, The switching unit scans in the first scanning direction using the first light source array when the angle between the first scanning direction and the arrangement direction of the light sources of the light source array is 45 ° to 90 °, and performs the first scanning. When the angle between the scanning direction and the arrangement direction of the light sources in the light source array is 0 ° to 45 °, the light source array is switched so as to scan in the first scanning direction using the second light source array.
[0033]
The switching unit scans in the second scanning direction using the second light source array when the angle between the second scanning direction and the arrangement direction of the light sources in the light source array is 45 ° to 90 °. When the angle between the second scanning direction and the arrangement direction of the light sources in the light source array is 0 ° to 45 °, scanning is performed in the second scanning direction using the first light source array.
[0034]
As described above, when adjusting the exposure pitch, the switching unit switches the light source array used for exposure according to the angle between the scanning direction and the arrangement direction of the light sources. Therefore, the first and second light source arrays can be rotated within a range of 45 ° by the light source array rotating means. As a result, the rotation range of the rotation unit of the light source array can be further restricted, so that the deterioration of the rotation accuracy can be further reduced and the accuracy can be improved.
[0035]
In the exposure apparatus of the present invention, when an abnormality occurs in the light source of the light source array, the power supply to the light source is stopped, and the position to be exposed by the abnormal light source is recorded, and the recorded position is recorded. May be configured to include a first abnormality countermeasure for performing exposure using a normal light source after the exposure based on the exposure data is completed.
[0036]
According to the above configuration, the first abnormality coping unit records the position to be exposed by the light source of the light source array in which the abnormality has occurred, and changes the position to the normal light source after the end of the exposure based on the exposure data. Exposure using. Thus, even if an abnormality occurs in the light source, the substrate can be reliably exposed without leaving an unexposed portion, and the yield can be improved. In addition, the first abnormality occurrence coping unit can also externally warn of an abnormality of the light source.
[0037]
In the exposure apparatus of the present invention, when an abnormality occurs in the light source of the light source array, power supply to the light source is stopped, and a position to be exposed by the abnormal light source is recorded, and the recorded position is recorded. May be configured to include a second abnormality occurrence countermeasure for exposing using a normal light source from the next scan in which an abnormality has occurred.
[0038]
According to the above configuration, the second abnormality occurrence coping unit records the position to be exposed by the light source of the light source array in which the abnormality has occurred, and changes the position to the normal position from the next scan in which the abnormality has occurred. Exposure is performed using a light source. Thus, even when an abnormality occurs, the substrate can be reliably exposed without leaving unexposed portions, and the yield can be improved. In addition, since exposure is performed using a normal light source from the next scan in which an abnormality has occurred, use of the light source in which an abnormality has occurred can be minimized. In addition, the second abnormality occurrence coping unit can also externally warn the abnormality of the light source.
[0039]
In the exposure apparatus of the present invention, the exposure pitch varying means may be a zoom optical system.
[0040]
In other words, the optical system in the exposure apparatus of the present invention is a zoom optical system. Thus, the light from the light source fixed at equal intervals can be set at an exposure pitch corresponding to the exposure pattern by changing the magnification by the zoom optical system. As a result, the optical system functions as an exposure pitch variable unit, so that an exposure apparatus having a simpler configuration can be provided. Therefore, the cost of the exposure apparatus is reduced.
[0041]
Exposure method of the present invention, in order to solve the above problems, in the exposure method of exposing the substrate by condensing light from a plurality of light sources on the substrate, the arrangement direction of the light sources are fixedly arranged at regular intervals and The exposure pitch is adjusted according to the exposure data in which the exposure pattern is stored by changing the angle between the substrate and the scanning direction.
[0042]
According to the above configuration, the light sources are fixedly arranged at equal intervals in the light source array, so that the light from the light sources is condensed on the substrate as condensing points at equal intervals. The distance between two straight lines passing through the adjacent light condensing points and parallel to the scanning direction corresponds to the exposure pitch. Since the exposure pitch differs depending on the exposure pattern, it is necessary to change it according to the exposure pattern. According to the above configuration, the exposure pitch is adjusted according to the exposure pitch by changing the angle between the arrangement direction of the light sources and the scanning direction of the substrate. Therefore, the light from the light source is always exposed on the substrate as a focal point at a target exposure pitch. Therefore, by scanning the light-converging point on the substrate, a plurality of periodic lines having a target exposure pitch can be exposed on the substrate.
[0043]
As described above, in the above-described configuration, since the light sources are arranged at fixed intervals, it is not necessary to adjust the distance between the light sources according to the exposure pattern. Therefore, the substrate can be exposed at an exposure pitch corresponding to the exposure pattern by shortening the exposure time. Therefore, a large-area substrate can be exposed at a high throughput. For example, even when this exposure method is applied to the production of a liquid crystal display, it can be applied to the production of various types of liquid crystal displays having different exposure pitches.
[0044]
The light exposure method of the present invention may be a method of changing the magnification of light focused on the substrate when the light emitted from the light source is focused on the substrate.
[0045]
According to the above configuration, by changing the magnification of the light emitted from the light source and condensing the light on the substrate, the light from the light source fixed at equal intervals is exposed on the substrate at an exposure pitch according to the exposure pattern. can do. As a result, it is possible to reduce a change in the angle between the arrangement direction of the light sources and the scanning direction of the substrate, which are fixedly arranged at equal intervals. For this reason, the precision of adjusting the angle can be improved, and the substrate can be exposed at an exposure pitch according to the exposure pattern with a simple configuration in which the magnification of the light emitted from the light source is changed.
[0046]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below with reference to FIGS. Note that the present invention is not limited to this.
[0047]
[Embodiment 1]
An embodiment of the present invention will be described with reference to FIGS.
[0048]
FIG. 1 is a diagram showing an exposure apparatus of the present embodiment. The exposure apparatus shown in FIG. 1 includes a laser array 1, a condensing optical system 3, and an XYZ stage 5.
[0049]
A laser array (light source array) 1 includes a plurality of semiconductor lasers 2 as light sources, and supplies laser light to a substrate 4 to be exposed. Semiconductor lasers (light sources) 2 are fixed to the laser array 1 at equal intervals.
[0050]
The condensing optical system (optical system) 3 condenses the laser light (emitted light) emitted from the laser array 1 on the glass substrate 4. The condensing optical system 3 has a configuration in which, for example, a laser beam emitted from the laser array 1 is converted into a plane wave by a collimating lens, and the plane wave is condensed by a condensing lens and is exposed on a glass substrate 4. can do.
[0051]
The XYZ stage 5 places the glass substrate 4 to be exposed, and moves the glass substrate 4 in each of the XYZ directions.
[0052]
In the arrangement of the entire exposure apparatus, a glass substrate 4, a condensing optical system 3, and a laser array 1 are arranged in this order from the XYZ stage 5.
[0053]
This exposure apparatus condenses light emitted from a semiconductor laser 2 of a laser array 1 by a condensing optical system 3, and makes the condensed light perpendicular to an exposure surface of a glass substrate 4 placed on an XYZ stage 5. Exposure.
[0054]
Since the laser array 1 has a plurality of semiconductor lasers 2 fixed at equal intervals, a plurality of condensing points at equal intervals exist on the glass substrate 4. Here, assuming that the distance between the adjacent semiconductor lasers 2 (that is, the distance between the center points of the adjacent semiconductor lasers 2 shown in FIG. 2A) is d, the focusing optical system 3 is an optical system of the same magnification. When a zoom function as described later is not provided, the interval (period) between adjacent light condensing points is also d.
[0055]
Therefore, for example, as shown in FIG. 1, when the laser array 1 is arranged perpendicularly to the X direction (parallel to the Y direction), the glass substrate 4 is moved by the XYZ stage 5 in the + X direction (arrow in FIG. 1). (The direction), the light-converging point is scanned on the glass substrate 4 in the −X direction (the direction opposite to the arrow in FIG. 1). Thus, a plurality of lines having a period d are exposed in the X direction of the glass substrate 4. As described above, when a plurality of semiconductor lasers 2 are provided, a plurality of periodic lines can be exposed by one scanning. Note that CAD data or the like in which an exposure pattern is stored is used as the exposure data.
[0056]
The cycle d of the line to be exposed differs depending on the exposure data. For example, it differs depending on the specifications of the liquid crystal display and the like. For this reason, it is necessary to change the cycle of the line to be exposed according to the exposure data.
[0057]
Therefore, in the present embodiment, the cycle (exposure pitch) of the line to be exposed is changed by changing the relative position between the laser array 1 and the glass substrate 4.
[0058]
More specifically, the cycle is changed by rotating the laser array 1 in a plane parallel to the glass substrate 4 by a laser array rotating unit (exposure pitch varying means, light source array rotating means) 13. For example, the exposure pitch is changed by rotating the laser array 1 with respect to the central axis of the laser array 1 (the dashed line in FIG. 1).
[0059]
More specifically, for example, as shown in FIG. 1, the laser array 1 in which the arrangement direction of the semiconductor lasers 2 is arranged perpendicular to the scanning direction X, the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction X is changed. Rotate so as to be θ. As a result, as shown in FIG. 2A, the light condensing point perpendicular to the scanning direction becomes a light condensing point inclined at an angle θ with respect to the scanning direction as shown in FIG. 2B. In this state, when the glass substrate 4 is scanned in the X direction, a plurality of lines having a period p can be exposed on the glass substrate 4. Using the interval d and the angle θ between the scanning direction and the laser array 1, the period p can be expressed by the following equation (1).
[0060]
p = d × sin θ (1)
As shown in Expression (1), the period p depends on the angle θ and can be equal to or less than the period d. As described above, by rotating the laser array 1 with respect to the scanning direction and changing the relative position between the laser array 1 and the substrate, even if the semiconductor lasers 2 are fixed at equal intervals, lines having different periods are obtained. Can be exposed.
[0061]
In the equation (1), by setting the angle θ to 0 to 90 °, the cycle p can be set to an arbitrary value equal to or less than the cycle d. Therefore, the laser array rotating unit 13 only needs to be able to rotate the laser array 1 within the movable range of 0 to 90 °. As the movable range of the laser array rotating unit 13 increases, the rotation accuracy tends to deteriorate. Therefore, by limiting the movable range to 0 to 90 °, deterioration of rotation accuracy can be reduced and accuracy can be improved.
[0062]
In the above, scanning in one direction (X direction) has been described. However, scanning can be performed in two directions (X direction (first scanning direction) and Y direction (second scanning direction)) orthogonal to each other. It is. For example, when scanning the exposure apparatus of FIG. 1 in the Y direction, the laser array 1 is rotated so as to be perpendicular to the scanning direction Y. Then, similarly to the case of scanning in the X direction, after the laser array 1 is rotated by the angle θ so that the period p based on the exposure data is obtained, the glass substrate 4 is moved by the XYZ stage 5 in the Y direction. A plurality of lines with a period p in the direction can be exposed. Thus, exposure can be performed in two directions, the X direction and the Y direction, only by setting the rotation range of the laser array rotating unit 13 to 90 °.
[0063]
The exposure apparatus that scans in two directions, the X direction and the Y direction, includes a first laser array (first light source array) 10 arranged perpendicular to the X direction and a second laser array (first light source array) arranged in the Y direction. And a laser array (second light source array) 11. The arrangement directions of the semiconductor lasers 2 in the first laser array 10 and the second laser array 11 are perpendicular to each other.
[0064]
For example, as shown in FIG. 3, the exposure apparatus may have a configuration in which the first laser array 10 and the second laser array 11 each include the condensing optical system 3.
[0065]
In this exposure apparatus, the first laser array 10 scans in the X direction and the second laser array 11 scans in the Y direction.
[0066]
Thus, by rotating the first laser array 10 or the second laser array 11 by the laser array rotating unit 13, a plurality of lines having a period p can be exposed on the glass substrate 4. For example, if the angle between the first laser array 10 and the X direction is set to 90 ° or less, the glass substrate 4 can be exposed in the X direction. Similarly, if the angle between the second laser array and the Y direction is set to 90 ° or less, exposure can be performed on the glass substrate 4 in the Y direction. As described above, the exposure apparatus of FIG. 3 uses the first laser array 10 for scanning in the X direction and uses the second laser array 11 in the Y direction. Therefore, unlike the exposure apparatus of FIG. 1, when changing from scanning in the X direction to scanning in the Y direction, scanning is performed in two directions, the X direction and the Y direction, without rotating the laser array 1 by 90 °. be able to. Thereby, the time required for rotating the laser array 1 can be reduced.
[0067]
In the exposure apparatus of FIG. 3 described above, the movable range of the first laser array 10 and the second laser array 11 was 90 ° or less. Therefore, for example, the first laser array 10 may be rotated by 60 °, and the angle between the first laser array 10 and the X direction may be 30 °. However, even if the second laser array 11 is rotated by 30 °, the angle formed between the second laser array 11 and the X direction is 30 °. That is,
In this case, the position where the first laser array 10 is rotated by 60 ° is the same as the position where the second laser array 11 is rotated by 30 °. For this reason, rotating the second laser array 11 rather than rotating the first laser array 10 narrows the movable range and improves accuracy.
[0068]
Therefore, it is preferable to switch between the first light source array 10 and the second light source array 11 depending on whether the exposure pitch is larger or smaller than 1 / √2 of the interval between the semiconductor lasers 2. Thereby, the movable range of the first light source array 10 and the second light source array 11 is narrowed, and the accuracy is improved. This switching can be performed, for example, by controlling the laser array rotating unit 13 by a switching unit (switching unit) not shown.
[0069]
For example, the exposure apparatus shown in FIG. 3 scans in the X direction using the second laser array 11 when the angle between the first laser array 10 and the X direction is 45 ° or less, and the second laser array 11 When the angle formed by the first laser array 10 and the Y direction is 45 ° or less, it is preferable to scan in the Y direction using the first laser array 10. In other words, the laser array in which the angle between the position before rotation of the first laser array 10 or the second laser array 11 and the position after rotation is 45 ° or less (the first laser array 10 or the second laser array 11). Scanning is preferably performed using a laser array 11).
[0070]
That is, the first light source array 10 scans in the scanning direction X when the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction X is 45 ° to 90 °, and the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction Y. Scans in the scanning direction Y when is 0 ° to 45 °, and scans in the scanning direction X when the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction X is 0 ° to 45 °. When the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction Y is 45 ° to 90 °, the scanning is performed in the scanning direction Y.
[0071]
Thereby, the movable range of the first laser array 10 and the second laser array 11 can be set to 45 ° or less. Accordingly, the movable range of the first and second laser arrays 11 and 12 can be further narrowed, so that the accuracy can be further improved and the size of the exposure apparatus can be reduced.
[0072]
As shown in FIG. 4, the exposure apparatus of the present embodiment has a configuration including a cross-shaped laser array 12 in which a first laser array 10 and a second laser array are integrally formed so as to be perpendicular to each other. You can also. In FIG. 4, the first laser array 10 and the second laser array 11 are attached to the cross-shaped laser array 12 for convenience. The arrangement directions of the semiconductor lasers 2 in the first laser array 10 and the second laser array 11 are perpendicular to each other.
[0073]
Also in this case, as described above, the switching unit switches between the first light source array 10 and the second light source array 11 depending on whether the exposure pitch is larger than 1 / √2 of the interval between the semiconductor lasers 2 or smaller. Is preferred. That is, when the angle formed between the first laser array 10 and the X direction is 45 ° or less, scanning is performed in the X direction using the second laser array 11 and the angle formed between the second laser array 11 and the Y direction. Is less than 45 °, it is preferable to scan in the Y direction using the first laser array 10.
[0074]
Thereby, the movable range of the first laser array 10 and the second laser array 11 can be set to 45 ° or less. Therefore, the movable range of the first and second laser arrays 10 and 11 can be further narrowed, so that the accuracy can be further improved. Further, since the number of the condensing optical systems 3 can be reduced as compared with the configuration of FIG. 3, the configuration of the apparatus can be simplified, and the cost of the apparatus can be reduced. That is, it is possible to cope with scanning in both the X direction and the Y direction by installing only one high-precision laser array rotation unit 13 having a rotation range of 45 ° or less.
[0075]
As described above, the movable range of the laser array rotating unit 13 is preferably from 0 ° to 90 °, and more preferably from 0 ° to 45 °. That is, the first light source array 10 scans in the scanning direction X when the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction X is 45 ° to 90 °, and the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction Y. Scans in the scanning direction Y when is 0 ° to 45 °, and scans in the scanning direction X when the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction X is 0 ° to 45 °. It is preferable that the scanning is performed in the scanning direction Y when the angle of the arrangement direction of the semiconductor lasers 2 with respect to the scanning direction Y is 45 ° to 90 °. Thus, the accuracy of exposure can be improved by limiting the movable range of the laser array rotating unit 13, that is, the rotating range of the laser arrays (light source arrays) 1, 10, 11, and 12.
[0076]
In the above description, the laser array rotating means rotates only the laser array 1 to change the relative position between the laser array 1 and the glass substrate 4. However, only the XYZ stage 5 is connected to the laser array 1. The rotation may be performed in a parallel plane, or both may be rotated to change the relative position. This also provides the same effect as described above. When the XYZ stage 5 is rotated, the XYZ stage serves as a substrate rotating unit.
[0077]
[Embodiment 2]
Another embodiment of the present invention will be described with reference to FIG. For the sake of convenience, members having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0078]
The exposure apparatus shown in FIG. 5 has a configuration in which the laser array 1 rotated in Embodiment 1 described above is fixed, and the condensing optical system 3 in FIG. 1 is a condensing optical system 6 with a zoom function.
[0079]
A condensing optical system with a zoom function (optical system / exposure pitch variable means) 6 enlarges or reduces the light emitted from the laser array 1 by the zoom function based on the exposure data and condenses the light on the glass substrate 4. To change the interval of the collected light. For example, the condensing optical system 6 with a zoom function reduces the light emitted from the laser array 1 into condensed light in which the interval between the condensing points is reduced. That is, the glass substrate 4 is exposed to condensing points at intervals smaller than the interval between the semiconductor lasers 2. When the glass substrate 4 is moved in the X direction by the XYZ stage XYZ stage 5 in a state where the interval between the condensing points is reduced, the glass substrate 4 is exposed to a line having a narrow interval (period). At this time, assuming that the interval between the semiconductor lasers 2 is d and the magnification of the condensing optical system is m, the period p of the line to be exposed is expressed by the following equation (2).
[0080]
p = d × m (2)
As described above, the exposure pitch can be varied with a simple configuration in which the condensing optical system 3 is changed to the condensing optical system 6 with a zoom function. That is, even if the semiconductor lasers 2 are fixed at equal intervals, the exposure pitch can be easily changed, and the cost of the exposure apparatus can be reduced.
[0081]
Further, when scanning is performed in the X direction and the Y direction, one laser array 1 can be used if the laser array 1 is rotated by 90 ° during the scanning in the X direction and the scanning in the Y direction. Thus, scanning in the X direction and scanning in the Y direction can be performed without increasing the number of laser arrays 1.
[0082]
Further, as in the exposure apparatus of FIGS. 3 and 4 described above, a configuration including a plurality of laser arrays, that is, a first laser array 10 perpendicular to the X direction and a second laser array 11 perpendicular to the Y direction. You can also. In this case, even when the condensing optical system 3 is replaced with the condensing optical system 6 with a zoom function, scanning in the X direction and scanning in the Y direction can be performed.
[0083]
As described above, as a method of changing the exposure pitch, the method of rotating the laser array 1 is described in the first embodiment, and the method of changing the magnification of light emitted from the laser array 1 is described in the second embodiment. It is also possible to use both of them.
[0084]
[Embodiment 3]
Another embodiment of the present invention will be described with reference to FIG. In the present embodiment, a case where an abnormality occurs in the laser array 1 will be described.
[0085]
The exposure apparatus of FIG. 6 includes an abnormality occurrence warning unit 7 and a first abnormality occurrence handling unit 8 in addition to the configuration of the exposure apparatus of FIG. That is, the configuration has one laser array 1.
[0086]
The abnormality occurrence warning unit 7 detects an abnormality such as a decrease in the output of the semiconductor laser 2 in the laser array 1 and warns the operator. The first abnormality occurrence handling unit (first abnormality occurrence handling means) 8 stops the power supply to the semiconductor laser 2 in which the abnormality has occurred, and is exposed by the semiconductor laser 2 of the laser array 1 in which the abnormality has occurred. Record the planned location.
[0087]
The laser array 1 is provided with a sensor for controlling the output of the semiconductor laser 2 at a constant level. However, when an abnormality occurs in the semiconductor laser 2, the output decreases, and it becomes difficult to control the output of the semiconductor laser 2 to a constant output. In this case, if the semiconductor laser 2 in which the abnormality has occurred is exposed as it is, exposure of the corresponding portion becomes insufficient, which leads to deterioration of the yield.
[0088]
Therefore, as shown in FIG. 6, an abnormality occurrence warning unit 7 warns an operator of an abnormality of the semiconductor laser 2, and a first abnormality occurrence handling unit 8 notifies the semiconductor laser 2 having the abnormality that the abnormality has occurred. The power supply is stopped, and the position to be exposed by the semiconductor laser 2 is recorded. The position recorded in the first abnormality handling unit 8 is exposed by using another normal semiconductor laser 2 after the exposure based on the exposure data is once completed. In the case of scanning in the Y direction, the exposure may be performed after rotating the laser array 1 by 90 °.
[0089]
As a result, even when an abnormality occurs, exposure can be performed without leaving unexposed portions, leading to an improvement in yield.
[0090]
[Embodiment 4]
Another embodiment of the present embodiment will be described with reference to FIG. In the present embodiment, a case where an abnormality occurs in the laser array 1 will be described.
[0091]
The exposure apparatus shown in FIG. 7 is different from the exposure apparatus shown in FIG. 3 in that the condensing optical system 3 is replaced with a condensing optical system 6 having a zoom function. And That is, the configuration has a plurality of laser arrays 1.
[0092]
The abnormality occurrence warning unit 7 detects an abnormality such as a decrease in the output of the semiconductor laser 2 in the first laser array 10 or the second laser array 11, and warns the operator. The second abnormality handling unit (second abnormality handling unit) 9 stops the power supply to the semiconductor laser 2 in which the abnormality has occurred, and the first laser array 10 or the second laser in which the abnormality has occurred. The position in the array 11 that was to be exposed by the semiconductor laser 2 is recorded.
[0093]
In the exposure apparatus shown in FIG. 7, an abnormality occurrence warning unit 7 warns an abnormality of the semiconductor laser 2 in the first laser array 10 or the second laser array 11, and a second abnormality occurrence countermeasure unit 9 provides an abnormality. The power supply to the semiconductor laser 2 at which the error occurs is stopped, and the position to be exposed by the semiconductor laser 2 is recorded. Then, from the next scan, the exposure based on the exposure data is completed using the normal first laser array 10 or second laser array 11. The position recorded in the second abnormality handling unit 9 is exposed using the normal semiconductor laser 2 of the first laser array 10 or the second laser array 12 after the end of the exposure based on the exposure data. .
[0094]
As a result, even when an abnormality occurs, exposure can be performed without leaving unexposed portions, leading to an improvement in yield.
[0095]
In the exposure apparatus shown in FIG. 7, two laser arrays of the first laser array 10 and the second laser array 11 have been described, but the same applies to a case having more laser arrays. In this case, if a plurality of cross-shaped laser arrays are provided as shown in FIG. 4, if an abnormality occurs in one of the laser arrays, the next scan is performed using another cross-shaped laser array. can do. Since the cross-shaped laser array can scan in the X and Y directions, it can scan without being rotated by 90 °, and can reduce the time required for rotation.
[0096]
In the above description, a semiconductor laser has been used as a light source. However, other light sources, such as SHG, can be used if they are small.
[0097]
The scanning is performed by moving the glass substrate 4, but the glass substrate 4 may be fixed, and the laser arrays 1, 10, and 11 and the condensing optical systems 3, 6 may be moved. That is, scanning can be performed by changing the relative position between the laser array 1 and the glass substrate 4.
[0098]
The present invention is not limited to the embodiments described above, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.
[0099]
Note that the conventional exposure apparatus controls the exposure pitch by adjusting the interval between the light sources of the light source array. For this reason, it was necessary to adjust the interval between the light sources. Since the light source array includes a plurality of light sources, it is difficult to control the light sources at equal intervals for all of them. Even if the light sources can be adjusted at regular intervals, it takes a very long time, and it is necessary to provide a configuration for controlling the intervals.
[0100]
Further, there is a conventional exposure apparatus in which the interval between light sources is fixed, but control of the exposure pitch has not been studied. Therefore, it was necessary to replace the light source array for each exposure pitch.
[0101]
On the other hand, in an exposure apparatus that can arbitrarily change the intervals between light sources, it is necessary to adjust the intervals between all light sources. For this reason, it is necessary to provide a control device for adjusting the interval between the light sources, and the structure of the exposure apparatus has been complicated.
[0102]
As described above, in the conventional exposure apparatus, the exposure time is long, and the exposure pitch cannot be adjusted with a simple configuration.
[0103]
In the exposure apparatus of the present invention, as described in each embodiment, the exposure apparatus of the present invention has a fixed interval between the semiconductor lasers 2. it can. Thus, there is no need to replace the laser array 1 for each exposure pitch, and it is not necessary to adjust the interval between the semiconductor lasers 2. Therefore, the glass substrate 4 can be exposed at an exposure pitch corresponding to the exposure pattern in a shorter time than before, and a simple configuration can be achieved.
[0104]
【The invention's effect】
As described above, the exposure apparatus of the present invention includes a light source array in which light sources are fixedly arranged at equal intervals, an optical system that focuses light emitted from the light source array on a substrate, and an exposure apparatus that stores an exposure pattern. The configuration includes an exposure pitch variable unit that adjusts an exposure pitch according to data.
[0105]
Further, the exposure method of the present invention, by changing the angle between the arrangement direction of the light source and the scanning direction of the substrate fixedly arranged at equal intervals, the exposure pitch according to the exposure data stored exposure pattern It is a method of adjusting.
[0106]
As described above, in the above configuration, since the intervals between the light sources are fixedly arranged at equal intervals, it is not necessary to adjust the intervals between the light sources according to the exposure pattern, and it is necessary to provide a configuration for adjusting the intervals. Absent. Therefore, the exposure time can be reduced, and the substrate can be exposed with a simple configuration at an exposure pitch corresponding to the exposure pattern. Therefore, a large-area substrate can be exposed at a high throughput. For example, even when this exposure apparatus is applied to the production of a liquid crystal display, one exposure apparatus can cope with the production of various types of liquid crystal displays having different exposure pitches.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of an exposure apparatus according to a first embodiment of the present invention.
FIG. 2 is a diagram for explaining adjustment of an exposure pitch in the first embodiment of the present invention. FIG. 2 (a) illustrates a light-converging point from a laser array arranged perpendicular to a scanning direction. FIG. 2B is a diagram illustrating a light-converging point from the laser array inclined with respect to the scanning direction.
FIG. 3 is a configuration diagram of an exposure apparatus having two laser arrays according to the first embodiment of the present invention.
FIG. 4 is a configuration diagram of an exposure apparatus having a cross-shaped laser array according to the first embodiment of the present invention.
FIG. 5 is a configuration diagram of an exposure apparatus according to a second embodiment of the present invention.
FIG. 6 is a configuration diagram of an exposure apparatus according to a third embodiment of the present invention.
FIG. 7 is a configuration diagram of an exposure apparatus according to a fourth embodiment of the present invention.
[Explanation of symbols]
1 laser array (light source array)
2 Semiconductor laser (light source)
3 Condensing optical system (optical system)
4 Glass substrate (substrate)
5 XYZ stage
6. Optical system with zoom lens (optical system, zoom optical system, variable exposure pitch means)
7 Error occurrence warning means
8 First measures
9 Second measures
10 First light source array
11 Second light source array
12. Cross-shaped laser array (light source array, first light source array, second laser array)
13 Laser array rotating section (exposure pitch variable means, light source array rotating means)
X scanning direction (first scanning direction)
Y scanning direction (second scanning direction)

Claims (11)

In an exposure apparatus that exposes the substrate by irradiating the substrate with light from a plurality of light sources,
A light source array in which the light sources are fixedly arranged at equal intervals, an optical system that focuses light emitted from the light source array on a substrate, and an exposure pitch variable that adjusts an exposure pitch according to exposure data in which an exposure pattern is stored. Exposure apparatus characterized by comprising means. 2. The exposure apparatus according to claim 1, wherein the exposure pitch variable means adjusts an exposure pitch by relatively moving the light source array and the substrate. 3. The exposure apparatus according to claim 2, wherein the exposure pitch varying means includes a light source array rotating means for rotating the light source array in a plane parallel to the substrate. 4. The exposure apparatus according to claim 3, wherein the light source array rotating means rotates the light source array within a range of 90 degrees or less. The light source array includes a first light source array and a second light source array that scan in a first scanning direction and a second scanning direction that are orthogonal to each other, and in which the arrangement directions of light sources are orthogonal to each other. 3. The exposure apparatus according to claim 2, wherein Further, a switching unit that switches a light source array used for exposure according to an angle formed between the scanning direction and the arrangement direction of the light sources,
The light source array includes a first light source array and a second light source array whose light source arrangement directions are orthogonal to each other for scanning the substrate in a first scanning direction or a second scanning direction orthogonal to each other. ,
4. The exposure according to claim 3, wherein the switching unit switches between the first light source array and the second light source array depending on whether the exposure pitch is larger than 1 / √2 of the light source interval or smaller. apparatus. When an abnormality occurs in the light source of the light source array, the power supply to the light source is stopped, a position to be exposed by the abnormal light source is recorded, and the recorded position is exposed based on the exposure data. 4. The exposure apparatus according to claim 3, further comprising a first abnormality countermeasure for performing exposure using a normal light source after completion of the step. When an abnormality occurs in the light source of the light source array, the power supply to the light source is stopped, and the position to be exposed by the abnormal light source is recorded, and the recorded position is recorded next time the abnormality occurs. 4. The exposure apparatus according to claim 3, further comprising a second abnormality countermeasure for performing exposure using a normal light source after the scanning. 9. The exposure apparatus according to claim 1, wherein the exposure pitch changing unit is a zoom optical system. In an exposure method of exposing a substrate by condensing light from a plurality of light sources on the substrate,
An exposure method characterized by adjusting an exposure pitch according to exposure data in which an exposure pattern is stored by changing an angle between an arrangement direction of light sources arranged at a regular interval and a scanning direction of a substrate by changing an angle between the arrangement direction of a light source and a scanning direction of a substrate. . 11. The exposure method according to claim 10, wherein when condensing light emitted from the light source on the substrate, a magnification of light condensed on the substrate is changed.

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