JP2004221134A - Apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the transport error by smoothing the separation of a semiconductor wafer from a clamp ring and improve the number of chips acquired from the semiconductor wafer. <P>SOLUTION: A semiconductor wafer W is settled in a sputtering apparatus using an abutting part 6b to come into contact with the wafer W, a clamp ring 6 having a peak 6a and a leaf spring 6d, and a heater 7. The length of the peak 6a is reduced to increase the number of chips acquisition and also a lot of film components are involved in the peak 6a. If the element components deposit in the boundary between the contact block 6b and the wafer W, the wafer W is pulled apart the contact block, when the heater 7 lowers after finishing a film forming process.As the result, the transport error due to the fixation of the clamp ring 6 to the wafer W is avoidable. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a technique that is effective when applied to a step of forming a deposited film on a semiconductor wafer.
[0002]
[Prior art]
A semiconductor device has a plurality of semiconductor elements, and the semiconductor elements are formed by repeating film formation and patterning of the film.
[0003]
One of the film formation methods is a sputtering method (sputtering, PVD: Physical Vapor Deposition).
[0004]
The sputtering method is a film formation method in which plasma-generated argon ions collide with a target (for example, a lump of metal or the like) located above a semiconductor wafer, and ejected target atoms are deposited on the semiconductor wafer.
[0005]
At this time, the semiconductor wafer may be pinched and fixed between the support base and the clamp ring. In such a case, a deposited film is also formed on the boundary between the clamp ring and the semiconductor wafer, and these are adhered. Therefore, various measures have been studied (for example, see Patent Document 1).
[0006]
[Patent Document 1]
JP-A-6-37039 (paragraphs 0013 to 0016, FIG. 1)
[0007]
[Problems to be solved by the invention]
The present inventors are engaged in research, development, and manufacture of a semiconductor device, and employ a film forming method using a sputtering method when forming a semiconductor element.
[0008]
Therefore, the above-described problem of the adhesion between the clamp ring and the semiconductor wafer is solved by providing an eave portion on the clamp ring.
[0009]
That is, as shown in FIG. 15, a semiconductor wafer W is sandwiched between a stage (heater) 7 and a clamp ring 66, and target atoms (film components) are deposited from above the semiconductor wafer W. An eave portion 66a is provided from the contact portion 66b with the wafer toward the inside of the semiconductor wafer.
[0010]
Therefore, the eaves portion 66a prevents the film component from being deposited on the boundary between the semiconductor wafer W and the contact portion 66b.
[0011]
For example, the inner diameter of the eave portion (the inner diameter of the clamp ring) is 194 mm, the inner diameter of the contact portion is 196.04 mm, and the diameter of the film formation guaranteed area of this clamp ring is 191.4 mm. The film formation guaranteed area is an area where a desired film thickness can be secured.
[0012]
On the other hand, in order to increase the number of chips obtained from one semiconductor wafer, it is necessary to increase the inner diameter of the eaves portion and enlarge the film formation guaranteed area.
[0013]
Therefore, as shown in FIG. 16, the present inventors set the inner diameter of the eaves portion 66a to 194.52 mm, that is, the eaves portion 66a to have a length of 0.26 mm (= (194.52-194) as compared with the case of FIG. The clamp ring shortened by) / 2) was studied. In this case, the diameter of the film formation assurance area is 192.4 mm.
[0014]
In this case, the diameter of the film formation assurance area is only increased by only 1 mm. However, in the peripheral portion of the semiconductor wafer W, even if the end of the rectangular area slightly deviates from the film formation assurance area. Since the rectangular area is a prohibited area in which chip acquisition is prohibited, even increasing the diameter of the film formation assurance area by only 1 mm contributes to an improvement in the number of chips acquired (FIG. 17).
[0015]
In other film forming methods, for example, a CVD (Chemical Vapor Deposition) method, a thermal oxidation method, and the like, such a clamp ring is rarely used, and the diameter of the clamp ring used in the sputtering method is a series of semiconductor device. In many cases, the number of chips obtained depends on the manufacturing process.
[0016]
Therefore, it is very important to devise the shape of the clamp ring and to expand the film formation guaranteed area.
[0017]
However, when the film was formed using the clamp ring shown in FIG. 16, as a result of retreating the eaves portion, the film component wrapping around the eaves portion increased, and the film component between the contact portion 66 b and the semiconductor wafer W. Was found to adhere (FIG. 18).
[0018]
When the film component adheres between the contact portion 66b and the semiconductor wafer W in this manner, even if the stage 7 is lowered, the semiconductor wafer W cannot be detached from the clamp ring only by its own weight, and the semiconductor wafer W can be moved by the transfer arm. A semiconductor wafer may be broken due to a transfer error or contact between the transfer arm and the semiconductor wafer.
[0019]
An object of the present invention is to improve the number of chips obtained on a semiconductor wafer.
[0020]
Another object of the present invention is to make the separation between the semiconductor wafer and the clamp ring smooth and to reduce the transport error.
[0021]
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
[0022]
[Means for Solving the Problems]
The outline of a typical invention among the inventions disclosed in the present application will be described as follows.
[0023]
An apparatus for manufacturing a semiconductor device according to the present invention is a semiconductor device manufacturing apparatus for fixing a semiconductor wafer by clamping the semiconductor wafer from a back surface supported by a back surface thereof and a clamp contacting an outer peripheral portion of the front surface of the semiconductor wafer. The clamp may include a contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer, an eave portion extending from an upper portion of the contact surface to the inside of the semiconductor wafer, and a clamp positioned outside the contact surface. And a spring portion whose end is located below the contact surface.
[0024]
The method for manufacturing a semiconductor device according to the present invention includes: (a) a support table for supporting the semiconductor wafer from its back surface; (a2) a contact surface for contacting the outer peripheral portion of the front surface of the semiconductor wafer; A clamp having an eave portion extending from the top of the surface to the inside of the semiconductor wafer, and a spring portion located outside the contact surface and having an end located below the contact surface. Clamping, (b) forming a deposited film on the semiconductor wafer, and (c) lowering the support base, and pressing the spring with a pressing surface of the clamp and the semiconductor wafer. And separating them from each other.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted.
[0026]
(Embodiment 1)
FIG. 1 is a cross-sectional view of a main part showing a configuration of a semiconductor device manufacturing apparatus (sputtering apparatus) according to a first embodiment of the present invention.
[0027]
This sputtering apparatus includes a magnet unit 1, a target unit 2, an upper shield 3, a lower shield 4, a clamp ring (clamp) 6, a heater (stage, support base) 7, a lifting mechanism 8, a transport mechanism 9, an insulator 10, a guide, and the like. It has a pin 11.
[0028]
As will be described later in detail, the semiconductor wafer W is held between the clamp ring 6 and the heater 7.
[0029]
Although not shown, the space between the target portion 2 and the semiconductor wafer W is filled with argon (Ar) gas.
[0030]
The magnet unit 1 is provided to generate a magnetic field in the vicinity of the target unit 2 so that the plasma-converted Ar gas easily collides with the target unit 2, that is, to improve the sputtering efficiency.
[0031]
The target unit 2 is made of a material of a film to be deposited on the semiconductor wafer W, and is made of, for example, metal. The target section 2 is configured so that a voltage is applied to the target section 2 to serve as a cathode (cathode). The target portion 2 is electrically insulated from the semiconductor wafer W by the insulator 10. This insulator 10 is made of, for example, ceramic.
[0032]
For example, when a negative voltage is applied to the target unit 2, an electric field is generated between the semiconductor wafer W and the target unit 2, and plasma-generated Ar ions are generated.
[0033]
The upper shield 3, the lower shield 4, and the clamp ring 6 are arranged so as to cover the upper portions of the heater 7, the elevating mechanism 8, the transport mechanism 9, and the elevating mechanism 8 and the like in order to prevent the film from adhering to the inner wall of the apparatus. These are detachably installed for each part, and are replaced and cleaned periodically. The clamp ring 6 and the lower shield 4 are connected via a guide pin 11.
[0034]
The heater 7 is arranged above the elevating mechanism 8, and heats the semiconductor wafer to a predetermined temperature. An Ar gas introduction pipe 7a is formed inside the heater 7 so that Ar gas is supplied from a hole on the surface of the heater 7. The Ar gas is supplied to a gap between the semiconductor wafer W and the heater 7 during film formation, and transfers heat of the heater 7 to the semiconductor wafer W via the Ar gas, thereby efficiently raising the temperature of the semiconductor wafer W, Further, the temperature of the semiconductor wafer W can be maintained at a predetermined temperature.
[0035]
In particular, when film formation is performed in a state where the temperature of the semiconductor wafer W is low, the deposited film components are immediately solidified, and the film quality and flatness are reduced. On the other hand, unless the semiconductor wafer W is pressed down from above by the clamp ring 6, the semiconductor wafer W will float due to the injection pressure of Ar gas. Therefore, when supplying Ar gas to the back surface of the semiconductor wafer W, the clamp ring 6 is an indispensable member.
[0036]
Note that it is possible to support the semiconductor wafer W only with the heater 7, but in this case, it is difficult to supply Ar gas to the back surface of the semiconductor wafer. In addition, it is possible to provide an electrostatic chucking mechanism inside the heater to securely fix the semiconductor wafer and to improve heat conduction from the heater to the semiconductor wafer. However, in this case, the internal structure of the heater becomes complicated, Equipment costs and operating costs increase.
[0037]
On the other hand, according to the sputtering apparatus of the present embodiment, a high-quality film can be formed while suppressing the apparatus cost and the like.
[0038]
The elevating mechanism 8 is configured to operate the heater 7 up and down, and the transport mechanism 9 is configured to lift and transport the semiconductor wafer W via a hole (not shown) in the outer peripheral portion of the heater 7. Have been.
[0039]
Next, the configuration of the clamp ring 6 will be described in detail. FIG. 2 is a cross-sectional view of a main part showing a relationship between the clamp ring 6 and the semiconductor wafer W, and FIG. 3 is a plan view of a main part of the clamp ring 6. FIG. 2 corresponds to a section taken along line AA of FIG. 3, and FIG. 4 shows a section taken along line BB of FIG.
[0040]
As shown in FIGS. 2 to 4, the clamp ring 6 has an abutting portion 6b that comes into contact with the semiconductor wafer W. The lower surface of the contact portion 6b is referred to as a contact surface (pressing surface). An eaves portion 6a extends from the contact portion 6b toward the inside of the semiconductor wafer W. A recess 6c is provided in a direction from the contact portion 6b to the inside of the clamp ring 6, and an elastic means (6d) for applying a downward pressing force to the semiconductor wafer W is provided inside the recess 6c. Have been. In FIG. 2, the leaf spring 6d is fixed to the side wall of the projection 6f by a pin 6g. FIG. 5 is a perspective view of the leaf spring 6d. 6e is a hole into which the pin 6g is introduced.
[0041]
Further, for example, the inner diameter of the eave portion is 194.52 mm, the inner diameter of the contact portion is 196.04 mm, and the diameter of the film formation guaranteed area of this clamp ring is 192.4 mm.
[0042]
Therefore, the length L of the eave portion is 0.76 (= (196.04-194.52) / 2) mm. Also, the height H of the eaves is about 0.2 mm. In addition, in each figure, the dimensional ratio may be different in order to easily explain the illustrated configuration.
[0043]
As shown in FIG. 3, the contact portions 6b are provided at four positions of the clamp ring 6, and a leaf spring is provided in a concave portion 6c (shaded portion in the drawing) outside the contact portion 6b. . The portions other than the four portions are not in contact with the semiconductor wafer W, and for example, the cross section of the BB portion is in the state shown in FIG.
[0044]
As described above, according to the present embodiment, the length L of the eave portion 6a is set to 1 mm to 0.5 mm (0.76 mm in FIG. 2), and the film component is formed at the boundary between the contact portion 6b and the semiconductor wafer W. When the heater descends after the film forming process is completed, the force (spring force) of the leaf spring 6d acts in a direction (downward) to separate the semiconductor wafer W and the contact portion 6b, so that the clamp ring 6 Sticking of the semiconductor wafer W can be prevented.
[0045]
Further, according to the present embodiment, since the eaves portion 6a is provided, the film deposited on the boundary portion between the contact portion 6b and the semiconductor wafer W can be made thinner, and the semiconductor can be formed even with a relatively small spring having a small stretching force. The wafer and the contact portion can be separated from each other. For example, when the eaves portion is not provided, a film having the same thickness (for example, about 0.5 μm) as the film formation guarantee area is deposited between the semiconductor wafer and the contact portion, and can be easily separated. Disappears.
[0046]
Further, according to the present embodiment, since the height of the eaves portion is about 0.1 to 0.3 mm (0.2 mm in FIG. 2), the eaves are deposited on the boundary between the contact portion and the semiconductor wafer. The thickness of the film can be suppressed to such an extent that the film can be separated by a spring or the like.
[0047]
That is, if the eaves portion is too high, the amount of wraparound of the film component increases, and the film thickness of the film deposited on the boundary between the contact portion and the semiconductor wafer increases. On the other hand, if the eaves are too low, the eaves are buried with the film deposited on the ends of the eaves, and the eaves effect is lost.
[0048]
As described above, according to the present embodiment, the eaves portion and the leaf spring can separate the semiconductor wafer and the contact portion, thereby preventing a subsequent transport error and reducing damage to the semiconductor wafer. Can be.
[0049]
Further, according to the present embodiment, for example, the length of the eave portion is reduced as compared with the case where the clamp ring described with reference to FIG. 15 is used, so that the number of obtained chips can be increased.
[0050]
In the present embodiment, a leaf spring has been described as an example. Alternatively, a helical spring as shown in FIG. 6A may be used. Further, as shown in FIG. 6B, a spring (plunger) in which a helical spring is built in a cylindrical case and a ball is provided at the end (the side in contact with the semiconductor wafer) may be used. Good.
[0051]
However, since the spring shown in FIGS. 6A and 6B needs to be mounted on the upper part of the clamp ring, its mechanism becomes complicated, and the work of mounting and removing may be complicated. On the other hand, in the case of a leaf spring, its structure is simple, and attachment and detachment are easy.
[0052]
Next, a process of manufacturing a semiconductor device (semiconductor integrated circuit device) using the sputtering device described in detail above will be described. 7, 8, 13, and 14 are cross-sectional views of a main part of a substrate showing a manufacturing process of the semiconductor device of the present embodiment.
[0053]
First, as shown in FIG. 7, a semiconductor substrate (semiconductor wafer W) 21 on which semiconductor elements are formed is prepared. Although there are various types of semiconductor elements, here, a complementary MISFET (Metal Insulator Semiconductor Field Effect Transistor) will be described as an example.
[0054]
In order to form such a MISFET, first, a groove is formed by etching a semiconductor substrate 21 made of p-type single-crystal silicon in a substantially circular wafer state, and a groove is formed as an insulating film inside the groove. The element isolation is formed by embedding the silicon oxide film 23.
[0055]
Next, n-type and p-type impurities are implanted into the semiconductor substrate 21 and heat treatment is performed to form a p-type well 25 and an n-type well 27.
[0056]
Next, the gate insulating film 29 is formed by subjecting the semiconductor substrate 21 to thermal oxidation. Next, an n-type polycrystalline silicon film 31 is deposited using a CVD (Chemical Vapor Deposition) method, and then a tungsten silicide film 33 is further deposited.
[0057]
Next, a silicon oxide film 35 is deposited on the tungsten silicide film 33, and is etched using a photoresist film (not shown) (hereinafter simply referred to as a “resist film”) as a mask, thereby forming a p-type well 25 and an n-type well 27. Then, a gate electrode G including an n-type polycrystalline silicon film 31 and a tungsten silicide film 33 is formed.
[0058]
Next, an n-type impurity is implanted on both sides of the gate electrode G of the p-type well 25, and a p-type impurity is implanted on both sides of the gate electrode G of the n-type well 27. ⁻ Semiconductor region 37 and p ⁻ A type semiconductor region 39 is formed.
[0059]
Next, after depositing, for example, a silicon oxide film as an insulating film on the gate electrode G by a CVD method, the sidewall spacers 41 are formed by anisotropically etching. Then, an n-type impurity is implanted on both sides of the gate electrode G on the p-type well 25, and a p-type impurity is implanted on both sides of the gate electrode G on the n-type well 27. ⁺ Semiconductor region 43 and p ⁺ A type semiconductor region 45 is formed.
[0060]
Through the steps so far, the n-channel MISFET Qn is formed on the main surface of the p-type well 25, and the p-channel MISFET Qp is formed on the main surface of the n-type well 27.
[0061]
Next, as shown in FIG. 8, for example, a silicon oxide film 47 is deposited as an insulating film by a CVD method, ⁺ Semiconductor region 43 and p ⁺ The contact hole C1 is formed by etching the silicon oxide film 47 on the mold semiconductor region 45.
[0062]
Next, a laminated film (hereinafter, referred to as a Ti / TiN film) 49a of a titanium (Ti) film and a titanium nitride (TiN) film serving as a barrier layer is deposited on the contact hole C1 by using a sputtering method, and then a conductive film is formed. As a film, for example, a tungsten (W) film 49b is deposited using a CVD method. Next, by removing the W film 49b and the like outside the contact hole C1 using a chemical mechanical polishing (CMP) method, a plug (connection) made of the W film 49b and the Ti / TiN film 49a is formed. Part) P1 is formed.
[0063]
Next, a Ti / TiN film 51a is deposited on the plug P1 by using a sputtering method, and a W film 51b is formed by using a CVD method. Next, these films are etched using a resist film (not shown) as a mask to form a first layer wiring M1 made of these films.
[0064]
Next, for example, a silicon oxide film 53 is deposited as an insulating film by a CVD method, and then the silicon oxide film 53 on the first layer wiring M1 is etched to form a contact hole C2.
[0065]
Next, after depositing a Ti / TiN film 55a using a sputtering method, a W film 55b is deposited using a CVD method, and the upper portion thereof is polished using a CMP method to form a plug P2.
[0066]
Next, a second layer wiring M2 made of a film containing aluminum (Al) as a main component is formed on the plug P2. First, the semiconductor substrate (semiconductor wafer W) 21 shown in FIG. It is installed on the heater 7 shown. The main component of the target used at this time is Al, and a small amount of copper (Cu) is contained therein. In addition to Cu, Si (silicon) or the like may be mixed. Further, Cu and Si may be mixed.
[0067]
First, the relationship between the semiconductor wafer W and the clamp ring 6 before the formation of the Al film is shown in FIG. As illustrated, the end of the leaf spring 6d is located lower than the lower surface (contact surface) of the contact portion 6b. In other words, it protrudes from the contact surface.
[0068]
Next, the heater (semiconductor wafer W) is lifted by the elevating mechanism until the contact surface of the clamp ring 6 comes into contact with the semiconductor wafer W. At this time, the leaf spring is housed in the recess 6c (FIG. 10).
[0069]
As a result, the semiconductor wafer W is fixed by the heater and the clamp ring 6.
[0070]
Next, a negative voltage is applied to the target unit 2 shown in FIG. 1 to generate an electric field between the semiconductor wafer W and the target unit 2. Due to this electric field, Ar gas between the target portion 2 and the semiconductor wafer W is ionized, and the ionized Ar gas (having a positive charge) collides with the target portion 2. Due to this collision, Al or the like, which is the target material of the target portion 2, is repelled.
[0071]
Part of the repelled Al is deposited on the semiconductor wafer W to form an Al film. At this time, Al goes into the eaves portion and Al adheres between the semiconductor wafer and the contact portion. As described above, at this time, Ar gas is supplied between the semiconductor wafer W and the heater, and the semiconductor wafer W is maintained at a predetermined temperature via the Ar gas.
[0072]
After the formation of the Al film is completed, the elevating mechanism 8 descends, and the heater and the semiconductor wafer W are separated from the clamp ring 6.
[0073]
Here, according to the present embodiment, when the heater is lowered, the semiconductor wafer W is subjected to its own weight and the pressing force of the leaf spring 6d (FIG. 11).
[0074]
As a result, even if Al adheres between the semiconductor wafer W and the contact portion 6b, the semiconductor wafer W can be separated from the clamp ring 6. Also, at this time, since the Al adhered by the eaves 6a is thin, the peeling of the film does not affect the film formation assurance area even if it is mechanically separated.
[0075]
The contact portion between the leaf spring 6d and the semiconductor wafer W may be an end of the semiconductor wafer W as shown in FIG.
[0076]
FIG. 13 shows a state after the Al film 57 is deposited.
[0077]
Next, as shown in FIG. 14, the second layer wiring M2 is formed by etching the Al film 57 using a resist film (not shown) as a mask.
[0078]
It is to be noted that a titanium nitride (TiN) film may be formed above and below the Al film, and the second layer wiring may be constituted by three layers.
[0079]
This TiN film can be formed by a sputtering method. Therefore, this TiN film or the Ti / TiN film constituting the first layer wiring M1 and the plugs P1 and P2 may be formed in the same manner as the Al film 57 using the sputtering apparatus of FIG.
[0080]
Thereafter, by repeating the steps of forming the insulating film, the plug, and the wiring, a further multilayer wiring can be formed, but detailed description and illustration of these steps are omitted.
[0081]
In addition, a protective film is formed on the uppermost layer wiring, and thereafter, the semiconductor substrate in a wafer state is diced into a substantially rectangular semiconductor chip (see FIG. 17). At this time, in the present embodiment, since the inner diameter of the clamp ring is increased, it is possible to secure a larger number of chips that can be obtained from one semiconductor wafer. As a result, the manufacturing cost of the product can be reduced.
[0082]
After that, the uppermost layer wiring (pad portion) exposed from the protection layer of each chip is electrically connected to the external terminal of the mounting board, and further, the peripheral portion of the chip is sealed with a resin if necessary. Thus, a semiconductor device is completed.
[0083]
(Embodiment 2)
In the first embodiment, a leaf spring bent at an acute angle (FIG. 5) is used. However, as described below, a leaf spring bent at an obtuse angle, that is, an angle θ formed by the leaf spring is 90 degrees <θ <. A 180-degree leaf spring may be used. Note that the configurations of the sputtering apparatus and the clamp ring of the present embodiment are the same as those of the first embodiment except for the shape of the leaf spring, and therefore description thereof is omitted.
[0084]
FIG. 19 is a perspective view of a leaf spring 26d according to the present embodiment. 6e is a hole into which the pin 6g is introduced.
[0085]
A case where an Al film is formed on a semiconductor substrate (semiconductor wafer W) 21 using such a leaf spring, for example, as in the first embodiment, will be described.
[0086]
First, before film formation, as shown in FIG. 20, the end of the leaf spring 26d is located below the lower surface (contact surface) of the contact portion 6b.
[0087]
Next, the heater (semiconductor wafer W) is lifted by the elevating mechanism until the contact surface of the clamp ring 6 comes into contact with the semiconductor wafer W. At this time, the leaf spring is housed in the recess 6c (FIG. 21). As a result, the semiconductor wafer W is fixed by the heater and the clamp ring 6.
[0088]
Next, an Al film is deposited on the semiconductor wafer W in the same manner as in the first embodiment.
[0089]
After the formation of the Al film is completed, the elevating mechanism 8 descends, and the heater and the semiconductor wafer W are separated from the clamp ring 6.
[0090]
Here, according to the present embodiment, when the heater is lowered, the semiconductor wafer W is subjected to its own weight and the pressing force of the leaf spring 26d (FIG. 22).
[0091]
As described above, even when the plate spring shown in FIG. 19 is used, the eaves portion and the plate spring can separate the semiconductor wafer and the contact portion from each other, thereby preventing a subsequent transfer error. In addition, breakage of the semiconductor wafer can be reduced.
[0092]
Further, when the angle θ formed by the leaf spring is 90 degrees <θ <180 degrees, the contact area between the semiconductor wafer W and the leaf spring increases. Therefore, as shown in FIG. 23, even when the semiconductor wafer W is displaced and mounted on the heater, the edge portion of the semiconductor wafer W that is gently inclined contacts the leaf spring 26d. As a result, the film formation process can be performed smoothly.
[0093]
The shape of the leaf spring studied by the present inventors will be described with reference to FIG.
[0094]
24, K1 is the angle (θ) formed by the leaf spring 26d, K2 is the distance between the tip of the leaf spring 26d and the contact portion 6b, and K3 is the distance between the bent portion of the leaf spring 26d and the center of the pin 6g. , K4 is the distance between the bent portion of the leaf spring 26d and the upper part of the pin 6g, K5 is the distance between the tip of the leaf spring 26d and the side wall of the recess 6c, and K6 is the leaf spring when the semiconductor wafer is raised. It is the distance between the tip of 26d and the upper wall of the recess 6c.
[0095]
For example, K1 = 102.5 °, K2 = 0.47 mm, K3 = 2.82 mm, K4 = 0.82 mm, K5 = 0.3 mm, and K6 = 0.24 mm. Also, K1 = 98 °, K2 = 0.45 mm, K3 = 3.32 mm, K4 = 1.22 mm, K5 = 0.3 mm, and K6 = 0.25 mm. Further, K1 = 105 °, K2 = 0.53 mm, K3 = 2.4 mm, K4 = 0.3 mm, K5 = 0.3 mm, and K6 = 0.24 mm.
[0096]
In addition, stainless steel or the like can be used as a material of the leaf spring in FIGS. Stainless steel has heat resistance and can be used, for example, for processing at about 350 ° C.
[0097]
In the case of performing a higher temperature treatment, a nickel (Ni) -based superalloy such as Hastelloy or Inconel is preferably used.
[0098]
As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and can be variously modified without departing from the gist thereof. Needless to say.
[0099]
Further, in the above embodiment, the MISFET has been described as an example of the semiconductor element, but it is needless to say that the present invention is not limited to a device having such an element.
[0100]
The present invention is not limited to semiconductor products such as memories and logic products, but can be applied to various products such as liquid crystal glass substrates, magnetic heads, optical disks, magneto-optical disks, and magnetic disks.
[0101]
【The invention's effect】
The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.
[0102]
A semiconductor wafer, a support table, a contact surface that comes into contact with the outer peripheral portion of the surface of the semiconductor wafer, an eaves portion that extends from the upper part of the contact surface to the inside of the semiconductor wafer, and is located outside the contact surface. Since the end portion is sandwiched by a clamp having a spring portion positioned below the contact surface and a clamp having the same, after forming a deposited film on the semiconductor wafer, the contact surface of the semiconductor wafer and the clamp is separated. It is easy to reduce the transport error. Further, the length of the eaves can be shortened, and the number of obtained chips can be improved.
[Brief description of the drawings]
FIG. 1 is a fragmentary cross-sectional view showing a configuration of a semiconductor device manufacturing apparatus (sputtering apparatus) according to a first embodiment of the present invention;
FIG. 2 is a fragmentary cross-sectional view showing a relationship between the clamp ring and the semiconductor wafer according to the first embodiment of the present invention.
FIG. 3 is a plan view of a main part of the clamp ring according to the first embodiment of the present invention.
FIG. 4 is a sectional view taken along line BB of FIG. 3;
FIG. 5 is a perspective view of the leaf spring according to the first embodiment of the present invention.
FIGS. 6A and 6B are perspective views of a helical spring and a plunger.
FIG. 7 is a fragmentary cross-sectional view of the substrate, illustrating a manufacturing step of the semiconductor device according to the first embodiment of the present invention;
FIG. 8 is a main-portion cross-sectional view of the substrate, illustrating a manufacturing step of the semiconductor device according to Embodiment 1 of the present invention;
FIG. 9 is a fragmentary cross-sectional view showing the relationship between the semiconductor wafer and the clamp ring before the formation of the Al film according to the first embodiment of the present invention.
FIG. 10 is a fragmentary cross-sectional view showing the relationship between the semiconductor wafer and the clamp ring during the formation of the Al film according to the first embodiment of the present invention.
FIG. 11 is a fragmentary cross-sectional view showing the relationship between the semiconductor wafer and the clamp ring after the formation of the Al film according to the first embodiment of the present invention.
FIG. 12 is an essential part cross-sectional view showing a relationship between a contact portion between a semiconductor wafer and a leaf spring.
FIG. 13 is a fragmentary cross-sectional view of the substrate, illustrating a manufacturing step of the semiconductor device according to the first embodiment of the present invention;
FIG. 14 is a fragmentary cross-sectional view of the substrate, illustrating a manufacturing step of the semiconductor device according to Embodiment 1 of the present invention;
FIG. 15 is a fragmentary cross-sectional view showing a shape of a clamp ring for describing an effect of the first embodiment of the present invention.
FIG. 16 is a sectional view of a principal part showing a shape of a clamp ring studied by the present inventors.
FIG. 17 is a plan view of a principal part of a semiconductor wafer showing a relationship between a film formation guarantee area and the number of obtained chips.
FIG. 18 is a fragmentary cross-sectional view for explaining the effect of the first embodiment of the present invention and showing the wraparound of the film around the clamp ring.
FIG. 19 is a perspective view of a leaf spring according to the second embodiment of the present invention.
FIG. 20 is a fragmentary cross-sectional view showing a relationship between a semiconductor wafer and a clamp ring before an Al film is formed according to the second embodiment of the present invention.
FIG. 21 is a fragmentary cross-sectional view showing a relationship between a semiconductor wafer and a clamp ring during formation of an Al film according to the second embodiment of the present invention.
FIG. 22 is a fragmentary cross-sectional view showing a relationship between a semiconductor wafer and a clamp ring after an Al film is formed according to the second embodiment of the present invention.
FIG. 23 is a fragmentary cross-sectional view of a semiconductor wafer and a clamp ring for describing effects of the second embodiment of the present invention;
FIG. 24 is a sectional view of a main part showing a shape of a leaf spring studied by the present inventors.
[Explanation of symbols]
1 Magnet part
2 Target part
3 Upper shield
4 Lower shield
6 Clamp ring
6a Eaves
6b Contact part
6c recess
6d leaf spring
6e hole
6f convex part
6g pin
7 heater (stage)
7a Ar gas introduction pipe
8 Lifting mechanism
9 Transport mechanism
10 Insulator
11 Guide pin
21 Semiconductor substrate
23 Silicon oxide film
25 p-type well
26d leaf spring
27 n-type well
29 Gate insulating film
31 Polycrystalline silicon film
33 Tungsten silicide film
35 Silicon oxide film
37 n ⁻ Semiconductor region
39 p ⁻ Semiconductor region
41 Sidewall spacer
43 n ⁺ Semiconductor region
45 p ⁺ Semiconductor region
47 Silicon oxide film
49a Ti / TiN film
49b W film
51a Ti / TiN film
51b W film
53 silicon oxide film
55a Ti / TiN film
55b W film
57 Al film
66 Clamp ring
66a Eaves
66b contact part
C1 contact hole
C2 contact hole
G gate electrode
H Height of eaves
K1 Angle of leaf spring
K2 Distance between tip of leaf spring and contact part
K3 Distance between bent part of leaf spring and center of pin
K4 Distance between bent part of leaf spring and top of pin
K5 Distance between tip of leaf spring and side wall of recess
K6 Distance between tip of leaf spring and upper wall of recess when semiconductor wafer is lifted
L Length of eaves
M1 First layer wiring
M2 Second layer wiring
P1 plug
P2 plug
Qn n-channel type MISFET
Qp p-channel type MISFET
W semiconductor wafer

Claims (8)

A semiconductor device manufacturing apparatus for fixing a semiconductor wafer by holding the semiconductor wafer from a back surface thereof and a clamp contacting an outer peripheral portion of a front surface of the semiconductor wafer by clamping the semiconductor wafer,
The clamp is
A contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer;
Eaves extending from the upper part of the contact surface to the inside of the semiconductor wafer,
A spring portion that is located outside the contact surface and whose end is located below the contact surface;
An apparatus for manufacturing a semiconductor device, comprising: A semiconductor device manufacturing apparatus for fixing a semiconductor wafer by holding the semiconductor wafer from a back surface thereof and a clamp contacting an outer peripheral portion of a front surface of the semiconductor wafer by clamping the semiconductor wafer,
The clamp is
A contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer;
An eave portion extending from the upper part of the contact surface to the inside of the semiconductor wafer by a distance of 1 mm or less, and having a height from the contact surface of 0.1 to 0.3 mm;
A spring portion that is located outside the contact surface and whose end is located below the contact surface;
An apparatus for manufacturing a semiconductor device, comprising: A semiconductor device manufacturing apparatus for fixing a semiconductor wafer by holding the semiconductor wafer from a back surface thereof and a clamp contacting an outer peripheral portion of a front surface of the semiconductor wafer by clamping the semiconductor wafer,
The clamp is
A contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer;
Eaves extending from the upper part of the contact surface to the inside of the semiconductor wafer,
An apparatus for manufacturing a semiconductor device, comprising: a leaf spring or a helical spring, which is located outside the contact surface and whose end is located below the contact surface. 4. The apparatus for manufacturing a semiconductor device according to claim 1, wherein an end of the spring portion contacts an end of the semiconductor wafer. (A) a semiconductor wafer,
(A1) a support base supported from the back surface;
(A2) a contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer, an eave portion extending from the upper portion of the contact surface to the inside of the semiconductor wafer, and an end located outside the contact surface and located outside the contact surface. A portion having a spring portion located below the contact surface, and a clamp having:
(B) forming a deposited film on the semiconductor wafer;
(C) lowering the support table and separating the contact surface of the clamp from the semiconductor wafer by a pressing force of the spring portion. A semiconductor device manufacturing apparatus for fixing a semiconductor wafer by holding the semiconductor wafer from a back surface thereof and a clamp contacting an outer peripheral portion of a front surface of the semiconductor wafer by clamping the semiconductor wafer,
The clamp is
A contact surface that contacts the outer peripheral portion of the front surface of the semiconductor wafer;
Eaves extending from the upper part of the contact surface to the inside of the semiconductor wafer,
A leaf spring located outside the contact surface and having an end located below the contact surface. 7. The semiconductor device manufacturing apparatus according to claim 6, wherein the leaf spring has a bent portion, and an angle formed by the bent portion is an acute angle. 7. The apparatus according to claim 6, wherein the leaf spring has a bent portion, and an angle formed by the bent portion is an obtuse angle.

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