JP2004213849A - Device and method for recording information, and device and method for reproducing information - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an information recording and reproducing device and method which requires only low power consumption, hardly generates heat and can record information at high speed. <P>SOLUTION: In a scanning probe type information recorder, an information recording method, an information reproducing device and an information reproducing method, an elastic wave generation element 22 for generating an elastic wave is provided on a small probe 21, but a heating means is not provided on that. The energy of an elastic wave emitted from the small probe 21 is utilized to form a pit (cavity) in shape, recording information. In addition, the energy of the elastic wave emitted from the small probe 21 is utilized to reproduce information according to the existence/absence of a pit on a recording medium 24 adjacent to the point of the small probe 21. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an information recording apparatus, an information recording method, an information reproducing apparatus, and an information reproducing method capable of performing ultra-high-density recording and reproduction of image information, large-capacity data, and the like.
[0002]
[Prior art]
With the development of computer networks, the amount of information processed by computers has increased rapidly, and accordingly, the need for information recording / reproducing devices having a very large capacity has increased. Among semiconductor memories, HDDs (hard disk drives), and optical disk systems, HDDs currently have the highest areal recording density (information recording amount per unit area), and at the product level, 50 Gbit / in. ² (Gbit / in ² : 10 per square inch ⁹ bit) recording density is achieved.
[0003]
However, in magnetic recording such as HDD, 100 Gbit / in due to magnetization reversal due to thermal fluctuation. ² It is very difficult to stably realize a recording density exceeding. In the current optical disk system in which the recording density is limited by the diffraction limit of light, the light source is 20 Gbit / in in the visible light range. ² The recording density of the degree is the limit.
[0004]
The areal recording density of a semiconductor memory is inferior to that of an HDD or an optical disk system, and a minimum processing line width of about 10 nm is required to obtain a recording density equivalent to these. As described above, in the information recording method using magnetism or light, there is a limit to the minimum pit size that determines the recording density, and significant progress in fine processing technology is also required for semiconductor memories.
[0005]
Instead of the conventional information recording device whose recording density is reaching its limit, a new information recording method having a different recording / reproducing method is being studied. As one of them, there is an information recording system using a technique of a scanning probe microscope (SPM) using a fine probe.
[0006]
For example, several hundred Gbit / in using an atomic force microscope (AFM). ² Ultra-high-density information recording systems have been developed. This system uses a cantilever with a fine probe as used in AFM to form a small pit (pit) with a diameter of several tens of nanometers on an organic recording medium, and reads out the pit with the same cantilever (Non-patented) Reference 1).
[0007]
That is, in this system, a very sharp micro-tip having a radius of curvature of less than 20 nm and a heater for heating the tip are formed at the tip of the cantilever fixed to the support base (for example, see Patent Reference 1). When a current is applied to the heater through two wires in a state where the tip of the probe is lightly in contact with the surface of the recording medium, the organic recording medium in contact with the tip of the probe is locally melted and has a diameter of 30 to 30 mm. Small pits of 40 nm are formed (Thermomechanical Writing).
[0008]
On the other hand, the pits are read out by applying a pulse current to the same heater as in the pit formation, but the current value is made slightly smaller than at the time of recording so that no pits are formed. In this state, when the microprobe is scanned while being in contact with the recording medium, the distance between the heater and the recording medium varies depending on the presence or absence of pits. When the distance changes, the thermal conductivity from the heater to the recording medium changes, and the temperature of the heater changes.
[0009]
Finally, the presence or absence of a pit is detected by measuring the change in the heater temperature as a change in the heater current (Thermomechanical Reading). Using an MEMS (Micro Electro Mechanical System) fabrication technology, an array in which 32 × 32 AFM cantilevers with heaters are integrated is 100 to 200 Gbit / in. ² A recording / reproducing operation at a recording density of 1 has been demonstrated (see Non-Patent Document 2).
[0010]
[Patent Document 1]
U.S. Pat. No. 6,218,086
[Non-patent document 1]
P. Vettiger et al. , IBM Journal of Research and Development, 1999, Vol. 44, no. 3,323
[Non-patent document 2]
M. I. Lutwyche et. al. , Appl. Phys. Lett. , 2000, Vol. 77, no. 20,3299
[0011]
[Problems to be solved by the invention]
The recording method of forming a topological pit by using the minute probe has an advantage that there is no lower limit of the pit size in principle unlike the recording method using magnetism or light. However, there are three heat-related problems in the Thermomechanical method in which a probe is heated, minute pits are formed in a recording medium in contact with the probe, and the presence or absence of pits is detected. The first is that the power consumption is large, the second is the problem of tracking irregularities due to temperature changes, and the third is the problem of the thermal time constant.
[0012]
In the conventional information recording / reproducing apparatus, only 2% of the electric power supplied to the heater is used for pit formation. Moreover, since a heater current is required not only at the time of recording but also at the time of reproduction, the power consumed by the entire two-dimensional array becomes extremely large. Further, since the heat utilization efficiency is poor, the temperature of the array rises due to the heat generated by the heater.
[0013]
This rising temperature varies depending on the power consumption of the heater. In this system, since 32 AFM cantilevers belonging to the same row of a two-dimensional array are operated in parallel, the entire heater current varies greatly depending on the pattern of data to be recorded during recording (current is supplied only to the heater of the cantilever forming pits). Shed).
[0014]
On the other hand, in reproduction, a heater current is supplied to all 32 cantilevers belonging to the same row, but each heater current is smaller than that in recording. Therefore, the temperature of the array differs between recording and reproduction.
[0015]
This temperature change causes expansion or contraction according to the coefficient of thermal expansion of the array material. If the temperature of the array differs between recording and reproduction, the position of the pit at the time of recording and the position of the probe at the time of reproduction deviate, making it impossible to reproduce information.
[0016]
In the conventional information recording / reproducing apparatus, a heater and a temperature sensor are built in the array in order to prevent a tracking error due to thermal expansion / contraction, and the temperature of the array is adjusted with a precision of ± 1 ° C. so as to be constant. This not only complicates the control circuit, but also has the disadvantage that the heater consumes more power.
[0017]
Further, since the thermal time constant of this information recording / reproducing apparatus is as slow as several μs, the recording / reproducing speed of one cantilever is limited to about 100 kHz. Although the thermal time constant is determined by the size and shape of the heater, the size of the heater cannot be reduced too much due to mechanical strength restrictions. Therefore, it is difficult to perform high-speed recording / reproducing with the Thermomechanical method using heating by a heater.
[0018]
[Means for Solving the Problems]
The present invention has been made to solve such a problem. That is, the present invention provides a scanning probe-type information recording device, an information recording method, an information reproducing device, and an information reproducing method, which include a means for generating an elastic wave instead of a heating means for a minute probe. Utilizing the energy of the elastic wave emitted from the probe, a pit is formed on the recording medium to record information. The information is reproduced by utilizing the energy of the elastic wave emitted from the minute probe, based on the presence or absence of a pit on the recording medium adjacent to the tip of the minute probe.
[0019]
In the present invention, since there is no heating means for the minute probe, it is possible to solve the problem related to heat of the Thermomechanical method. That is, the pit formation by the elastic wave has a high energy use efficiency and therefore consumes a small amount of power. In addition, since the heating means is not used, the calorific value is small, and the thermal expansion and contraction due to it is small. Further, since the propagation speed of the elastic wave is high, the time constant is small, and high-speed recording and reproduction can be performed.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram illustrating an information recording / reproducing apparatus according to the present embodiment. That is, the information recording / reproducing apparatus records and reproduces information by scanning the surface of the recording medium 24 with the probe 21a (protruding end) of the micro probe 21 which is a cantilever. The micro probes 21 are arranged on the array chip 210 in a matrix of, for example, 32 × 32 (5 × 5 in FIG. 1), and the probes 21 a of the micro probes 21 face the recording medium 24. It is in a state to do.
[0021]
The recording medium 24 is placed on a drive 25, and the drive 25 moves in the XYZ directions so that the relative position with each of the micro probes 21 can be adjusted. The recording medium 24 is provided with subfields corresponding to the contact range of one minute probe 21, and minute pits are formed in each subfold. Recording is performed by forming a minute pit by contact with the minute probe 21, and reproduction is performed by detecting the minute pit with the minute probe 21.
[0022]
In the present embodiment, an elastic wave generating means is used as means for applying energy to the cantilever, and the elastic wave applied from the elastic wave generating means to the cantilever forms a depression on the surface of the recording medium at the position of the probe. The information is recorded in the device, and the presence or absence of the depression is read to reproduce the information.
[0023]
Next, an example of a micro probe applied in the present embodiment will be described.
[0024]
<First embodiment>
FIG. 2 schematically shows an example of the information recording / reproducing apparatus according to the first embodiment. An elastic wave generating element (elastic wave generating means) 22 is formed on a support base 23, and a minute probe 21 is formed integrally thereon. A recording medium 24 is provided near the tip of the probe. The elastic wave generated by the elastic wave generating element 22 is applied to the surface of the recording medium 24 via the minute probe 21.
[0025]
The region to be irradiated with the elastic wave is limited to the vicinity of the tip of the minute probe 21, and vibration is locally applied to the region. A pit is formed by heating with the heating. By using, for example, a resin material having a low softening temperature as the recording medium 24, pits can be formed with small elastic wave energy.
[0026]
In the example shown in FIG. 2, a pit is formed by bringing the tip of the micro probe 21 close to the resin surface of the recording medium 24 without making contact with the resin surface, but the elastic wave is efficiently generated only from the tip of the micro probe 21. Therefore, if the distance between the tip of the minute probe 21 and the resin surface is small, minute pits can be formed.
[0027]
Of course, by bringing the tip of the minute probe 21 into contact with the resin surface of the recording medium 24, the energy of the elastic wave can be more efficiently applied to the recording medium, and the intensity is smaller than the elastic wave intensity required in the case of non-contact. Can form a pit.
[0028]
The load of the fine probe 21 applied to the recording medium 24 is appropriately adjusted according to the intensity of the elastic wave on the surface of the recording medium 24. Typically, a pit having a sufficient depth and radius with a load of about 0.1 μN is used. Can be formed. Since the elastic wave is efficiently radiated only from the tip of the minute probe 21, a smaller pit can be formed as the local radius of the tip becomes smaller, and the recording density can be increased.
[0029]
In the present embodiment, the pits are formed on the surface of the recording medium 24 by applying an elastic wave to the surface of the recording medium 24 via the minute probe 21. It is necessary to maintain the shape for a sufficient time. Therefore, the intensity of the elastic wave applied to the surface of the recording medium is large enough for the pits to remain even after the supply of the elastic wave is cut off.
[0030]
The magnitude of the elastic wave required for the pits to remain even after the supply of the elastic wave is cut off depends on the method of generating the elastic wave, the coupling efficiency between the elastic wave generating element 22 and the microprobe 21, and the size of the microprobe 21. Although it varies depending on the distance from the recording medium 24, the material, shape, and size of the minute probe 21, the material of the recording medium 24, etc., in order to reduce power consumption in the recording operation, generation of an elastic wave having high energy conversion efficiency is required. It is desirable to use a method. There are piezoelectric, magnetostrictive, electromagnetic, electrostatic, etc. methods of generating elastic waves, but from the viewpoint of easy integration and energy conversion efficiency, a piezoelectric type elastic wave generating method utilizing the piezoelectric effect is used. Is desirable.
[0031]
The piezoelectric-type elastic wave generating element 22 includes a length-extension mode vibrator with field pendenticular to length, a thickness-extension vibrator, a thickness-extension vibrator, and a thickness elongation vibrator. ), But a bulk acoustic wave resonator, which is a kind of thickness elongation vibrator and suitable for fine processing, is preferable.
[0032]
FIG. 3 schematically shows the structure of a thin film bulk acoustic wave resonator having a microtip. The basic structure of the thin film bulk acoustic wave resonator is a three-layer structure including a lower electrode 35 and an upper electrode 37 sandwiching a piezoelectric thin film 36.
[0033]
When a voltage is applied between the lower electrode 35 and the upper electrode 37, the piezoelectric thin film 36 contracts in the film thickness direction, and generates bulk acoustic waves that propagate in the film thickness direction. This thin film bulk acoustic wave resonator is formed on a support base 33 with an insulating film 34 interposed therebetween. The support base 33 is used to maintain the mechanical strength of the entire device.
[0034]
On the lower surface of the support base 33, a minute probe 31 whose tip is directed downward is formed via an insulating film 32. Since the micro probe 31 is formed in the window region 38 from which a part of the support base 33 is removed, the elastic wave generated from the thin film bulk acoustic wave resonator passes through the micro probe 31 through the insulating films 32 and 34. Is transmitted with high efficiency.
[0035]
4 and 5 are schematic sectional views showing a method for manufacturing the structure shown in FIG. As the substrate, as shown in FIG. 4A, an SOI (Silicon on Insulator) substrate having a thermal oxide film 44 formed on the surface is used. In the drawing, reference numerals 41 and 43 indicate Si layers, and reference numeral 42 indicates a buried oxide film layer (BOX layer: Burried Oxide layer).
[0036]
First, in order to form a micro tip, as shown in FIG. 4B, a portion of the upper insulating film 44 corresponding to the position of the micro tip is subjected to photolithography and reactive ion etching (RIE: Reactive Ion Etching). ) To pattern in a circle. The gas used for etching is, for example, CF ₄ And O ₂ Use a gas mixture of
[0037]
Next, using the patterned insulating film 44 as a mask, the Si layer 43 thereunder is ₆ And O ₂ Reactive ion etching is performed with a mixed gas of the above, only Si is isotropically etched, and Si immediately below the etching mask is left in a conical shape.
[0038]
Thereafter, only the etching mask is removed with, for example, a BHF (Buffered Hydrogen Fluoride) solution, and thermal oxidation and removal of the oxide film are repeated several times in order to sharpen the remaining conical Si tip.
[0039]
The surface of the conical Si is covered with an oxide film due to thermal oxidation, and the entire cone is made thinner by removing it. However, the progress of oxidation is slow due to residual stress, so the tip shape is very sharp Is obtained. As shown in FIG. 4C, the microprobe 43 thus manufactured is embedded with an appropriate protective film 45 to protect the tip.
[0040]
Subsequently, a thin film bulk acoustic wave resonator is manufactured. First, in order to form a window region by removing a part of the Si layer 41 of the SOI substrate, a SiO-based film is formed on the back surface of the SOI substrate by, for example, PE-CVD (Plasma-Enhanced Chemical Vapor Deposition) method. ₂ A film 46A is formed on the entire surface. Next, in order to form an opening, SiO 2 is formed using photolithography and RIE. ₂ The film 46A is opened.
[0041]
This SiO ₂ Using the film as an etching mask, the Si substrate 41 is anisotropically etched using, for example, a TMAH (Tetramethylammonium Hydroxide) solution. TMAH is a selective etchant of Si, and as shown in FIG. 4D, the BOX layer 42 is not etched, and a flat bottomed window is formed. Continue with SiO ₂ The film 46A is removed, and the entire back surface is formed of SiO 2 again by PE-CVD for insulation. ₂ The film 46B is formed (see FIG. 5).
[0042]
As shown in FIG. ₂ On the film 46B, the lower electrode 47, the piezoelectric thin film 48, and the upper electrode 49 of the thin film bulk acoustic wave resonator are patterned, and a wiring region for applying an external voltage between the lower electrode 47 and the upper electrode 49 (see FIG. (Not shown).
[0043]
The upper electrode 49 and the lower electrode 47 are both formed of, for example, a two-layer film of Ni—Cr and Au, and are patterned by electron beam evaporation and a lift-off method. If the piezoelectric thin film 48 is made of, for example, ZnO, Zn is used as a target, and Ar and O are used. ₂ Formed by a reactive sputtering method using a mixture of ₃ COOH: H ₃ PO ₄ : H ₂ Patterning is performed by etching the ZnO film with a mixed solution of O = 1: 1: 10.
[0044]
Finally, a protective film 45 for the microtip is formed by a suitable means (for an organic film, O ₂ Using plasma etching). By applying an alternating current or a short pulse voltage between the electrodes of the thin-film bulk acoustic wave resonator provided with the microtip fabricated in this way, an elastic wave is emitted from the tip of the microtip.
[0045]
By bringing the minute probe close to or in contact with an appropriate recording medium (for example, Polymethylmethacrylate) and applying an elastic wave, minute pits can be formed on the surface of the recording medium. If the thickness of the piezoelectric thin film used in the thin film bulk acoustic wave resonator is set to half the wavelength of the generated elastic wave in the piezoelectric thin film, the maximum elastic wave generation efficiency can be obtained at that frequency ( Standing wave conditions). Therefore, the thickness of the piezoelectric film should be appropriately adjusted according to the frequency of the elastic wave to be used, and is not particularly defined in the present invention.
[0046]
Although FIGS. 2 to 5 show an apparatus and a manufacturing method provided with a single microtip, a one-dimensional or two-dimensional array structure having a plurality of microtips may be used. By operating a plurality of microtips in parallel using an array structure, a higher operation speed can be obtained than in an apparatus having a single microtip. In this case, an element for providing an elastic wave may be provided for each micro probe, or a structure for providing an elastic wave from one elastic wave generating element to a plurality of micro probes may be used.
[0047]
<Second embodiment>
Next, a second embodiment of the micro probe will be described. 6A and 6B are views for explaining the micro probe according to the second embodiment. FIG. 6B is a plan view seen from the micro probe side, and FIG. 6A is a line segment AA ′ in this plan view. 2 shows a cross section of FIG. The BOX layer 52 of the SOI substrate is removed over the entire window region 50 except for a strip-shaped portion 52A that supports the minute probe 53.
[0048]
Further, the layer 56 provided for insulation from the Si substrate 51 is removed over the entire window region 50 including the lower part of the micro probe 53. Therefore, a gap corresponding to the thickness of the insulating layer 56 is formed between the BOX layer 52A that supports the minute probe 53 and the lower electrode 57 of the thin-film bulk acoustic wave resonator.
[0049]
At this time, both ends of the fine probe 53 are supported by the Si substrate 51 by the strip-shaped BOX layer 52A. An excessive load is not applied to the minute probe 53.
[0050]
Furthermore, by providing a gap between the microprobe and the thin-film bulk acoustic wave resonator, even when using a recording method in which the microprobe and the recording medium are brought into contact, the load applied to the microprobe is thin. It can be prevented from adding to the bulk acoustic wave resonator.
[0051]
The shape of the strip-shaped BOX layer 52A is not limited to a structure in which both ends are fixed, but can take any structure such as a cantilever or a multipoint support. The displacement (spring constant) of the beam per unit load can be designed based on the length, width, thickness, or Young's modulus of the material.
[0052]
For example, the spring constant can be reduced by making the beam longer, narrower, or thinner. If the spring constant is reduced, the load applied to the microprobe can be reduced for the same displacement, so that wear and destruction of the microprobe can be reduced. However, at the same time, the self-resonant frequency of the beam also decreases. If the resonance frequency is too low, the response speed of the beam due to the elastic wave decreases, and it becomes difficult to perform a high-speed recording operation. Unlike the propagation of heat, the propagation of an elastic wave in a solid with negligible viscosity has a substantially small time constant. Therefore, the structure of the beam having an appropriate resonance frequency should be designed so as not to sacrifice this small time constant.
[0053]
7 and 8 show a method for manufacturing the structure shown in FIG. As the substrate, as shown in FIG. 7A, an SOI substrate having a thermal oxide film 64 formed on the surface is used. In the figure, reference numerals 61 and 63 indicate a Si layer, and 62 indicates a BOX layer.
[0054]
First, in order to form a fine probe, as shown in FIG. 7B, the upper SiO 2 of a portion corresponding to the position of the fine probe is formed. ₂ The film 64 is patterned into a circle using photolithography and RIE. The gas used for etching is, for example, CF ₄ And O ₂ Use a gas mixture of Next, using the patterned insulating film 64 as a mask, the underlying Si layer 63 is SF ₆ And O ₂ Reactive ion etching is performed with a mixed gas of the above, only Si is isotropically etched, and Si immediately below the etching mask is left in a conical shape.
[0055]
Thereafter, only the etching mask is removed with, for example, a BHF solution, and thermal oxidation and removal of the oxide film are repeated several times in order to sharpen the remaining conical Si tip. As shown in FIG. 7C, the microprobe 63 thus manufactured is embedded with an appropriate protective film 65 to protect the tip.
[0056]
Subsequently, a thin film bulk acoustic wave resonator is manufactured. First, in order to remove a part of the Si substrate 61 and form a window region, SiO 2 is formed on the back surface of the SOI substrate by, for example, PE-CVD. ₂ A film 66A is formed on the entire surface (see FIG. 7D). This SiO ₂ The film 66A is opened in a rectangular shape using photolithography and RIE, and the Si substrate is anisotropically etched using, for example, a TMAH solution. As a result, as shown in FIG. 7D, an inclined window with the BOX layer 62 left is formed.
[0057]
Continue with SiO ₂ The film 66A is removed, and an insulating film 66B is formed on the entire surface. As shown in FIG. 8A, the lower electrode 67, the piezoelectric thin film 68, and the upper electrode 69 of the thin film bulk acoustic wave resonator are patterned on the insulating film 66B, and the space between the lower electrode 67 and the upper electrode 69 is formed. Then, a wiring region for applying a voltage from outside is formed (not shown).
[0058]
The upper electrode 69 and the lower electrode 67 are both formed of, for example, a two-layer film of Ni—Cr and Au, and are patterned by electron beam evaporation and a lift-off method. The piezoelectric thin film 68 is made of, for example, ZnO using a photoresist as a mask and CH ₃ COOH: H ₃ PO ₄ : H ₂ Patterning is performed by etching only the ZnO film with a mixed liquid of O = 1: 1: 10.
[0059]
Then, the protective film 65 of the microtip is formed by an appropriate means (for an organic film, CF is used). ₄ And O ₂ (See FIG. 8 (b)). Further, the support structure 52A (see FIG. 6B) of the minute probe 63 is patterned on the BOX film 62 by using photolithography and RIE.
[0060]
Finally, the insulating film 66B in the window portion is selectively removed (see FIG. 8C). At this time, it is preferable to use an organic material for the insulating film 66B so that the Si substrate 61, the minute probe 63, and the BOX layer 62 are not affected. In this case, the organic material stripping solution or O ₂ By dry etching with a gas, only the insulating film 66B can be selectively removed.
[0061]
By applying an alternating current or a short pulse voltage between the electrodes of the thin-film bulk acoustic wave resonator provided with the microtip fabricated in this manner, the elastic wave emitted from the thin-film bulk acoustic wave resonator is subjected to the microprobe. The acoustic wave is propagated to the minute probe 63 through the space below the needle 63, and the elastic wave is emitted from the tip.
[0062]
By bringing the minute probe 63 into contact with an appropriate recording medium (for example, Polymethylmethacrylate), minute pits can be formed on the surface of the recording medium. (If the thickness of the piezoelectric thin film used in the thin film bulk acoustic wave resonator is half the wavelength of the generated elastic wave in the piezoelectric thin film, the maximum elastic wave generation efficiency can be obtained at that frequency.) . Therefore, the thickness of the piezoelectric film should be appropriately adjusted according to the frequency of the elastic wave to be used, and is not particularly defined in the present invention.
[0063]
FIGS. 6 to 8 show an apparatus and a manufacturing method provided with a single micro probe, but may have a one-dimensional or two-dimensional array structure provided with a plurality of micro probes. By operating a plurality of microtips in parallel using an array structure, a higher operation speed can be obtained than in an apparatus having a single microtip. In this case, an element for providing an elastic wave may be provided for each micro probe, or a structure for providing an elastic wave from one elastic wave generating element to a plurality of micro probes may be used.
[0064]
Further, in the above example, devices that can perform both recording and reproduction of information have been described as information recording / reproducing devices, but they may be configured as separate devices, that is, an information recording device and an information reproducing device. Good.
[0065]
【The invention's effect】
As described above, in a scanning probe type information recording / reproducing apparatus provided with a means for generating an elastic wave and a minute probe, the elastic wave generated from the tip of the minute probe is used to form a non-shape on a recording medium. By using the method of forming reversible pits, power consumption is low, heat generation is small, and high-speed information recording can be performed. Further, by reading out the already recorded pits using the means for generating the elastic wave and the minute probe, it is possible to function as an information reproducing apparatus having the same features.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating an information recording / reproducing apparatus according to an embodiment.
FIG. 2 is a schematic diagram illustrating an example of an information recording / reproducing apparatus according to a first embodiment.
FIG. 3 is a schematic diagram illustrating a structure of a thin-film bulk acoustic wave resonator including a microtip.
FIG. 4 is a schematic cross-sectional view (part 1) illustrating the method for manufacturing the information recording / reproducing apparatus according to the first embodiment.
FIG. 5 is a schematic cross-sectional view (part 2) illustrating the method for manufacturing the information recording / reproducing apparatus according to the first embodiment.
FIG. 6 is a schematic diagram illustrating an example of an information recording / reproducing apparatus according to a second embodiment.
FIG. 7 is a schematic cross-sectional view (part 1) illustrating the method for manufacturing the information recording / reproducing apparatus according to the second embodiment.
FIG. 8 is a schematic cross-sectional view (part 2) illustrating the method for manufacturing the information recording / reproducing apparatus according to the second embodiment.
[Explanation of symbols]
Reference numeral 21: micro probe, 22: elastic wave generating element, 23: support base, 24: recording medium

Claims (20)

In a device that records information by scanning a micro probe on the surface of a recording medium,
An elastic wave generating means for applying an elastic wave to the microtip is provided, and an elastic wave transmitted from the elastic wave generating means to the tip of the microtip is used at a position close to the tip of the microtip. An information recording apparatus for recording information by forming a shape-like depression on a surface of the recording medium. 2. The information recording apparatus according to claim 1, wherein information is recorded by bringing a tip end of said micro probe into contact with a surface of said recording medium. 2. The information recording apparatus according to claim 1, wherein said elastic wave generating means is a piezoelectric element. 2. The information recording apparatus according to claim 1, wherein said elastic wave generating means is a bulk acoustic wave resonator. 2. The information recording apparatus according to claim 1, wherein the micro probe is arranged between the elastic wave generating means and the recording medium. 2. The information recording apparatus according to claim 1, wherein the minute probe is formed integrally on the elastic wave generating means. 2. The information recording apparatus according to claim 1, wherein the microtip is formed on the elastic wave generating means with a predetermined gap. The micro-tip is formed on the bulk acoustic wave resonator via a predetermined gap, and is supported by a portion of the bulk acoustic wave resonator other than the thin film resonator. 4. The information recording device according to 4. In a method of recording information by scanning a fine probe on the recording medium surface,
An elastic wave is applied to the microtip, and the elastic wave transmitted to the tip of the microtip is used to record information by forming a shape depression on the surface of the recording medium at a position close to the tip. An information recording method, comprising: 10. The information recording method according to claim 9, wherein information recording is performed by bringing a tip of the micro probe into contact with the surface of the recording medium. In a device that reproduces information by scanning a minute probe on the surface of a recording medium,
An elastic wave generating means for applying an elastic wave to the microtip is provided, and an elastic wave transmitted from the elastic wave generating means to the tip of the microtip is used at a position close to the tip of the microtip. An information reproducing apparatus for reproducing information depending on the presence or absence of a depression on the surface of the recording medium. 12. The information reproducing apparatus according to claim 11, wherein information is reproduced by bringing a tip of the micro probe into contact with the surface of the recording medium. 12. The information reproducing apparatus according to claim 11, wherein said elastic wave generating means is a piezoelectric element. The information reproducing apparatus according to claim 11, wherein the elastic wave generating means is a bulk acoustic wave resonator. 12. The information reproducing apparatus according to claim 11, wherein the fine probe is arranged between the elastic wave generating means and the recording medium. 12. The information reproducing apparatus according to claim 11, wherein the minute probe is formed integrally on the elastic wave generating means. 12. The information reproducing apparatus according to claim 11, wherein the minute probe is formed on the elastic wave generating means via a predetermined gap. The micro-tip is formed on the bulk acoustic wave resonator through a predetermined gap, and is supported by a portion of the bulk acoustic resonator other than the thin film resonator. 15. The information reproducing apparatus according to 14. In a method of reproducing information by scanning a fine probe on the recording medium surface,
Giving an elastic wave to the microprobe, using an elastic wave transmitted to the tip of the microprobe, reproducing information by the presence or absence of a dent on the recording medium surface at a position close to the tip. Information reproduction method. 20. The information reproducing method according to claim 19, wherein information is reproduced by bringing a tip of the micro probe into contact with the surface of the recording medium.

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