JP2004177415A - アレイ製造方法 - Google Patents
アレイ製造方法 Download PDFInfo
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- JP2004177415A JP2004177415A JP2004029995A JP2004029995A JP2004177415A JP 2004177415 A JP2004177415 A JP 2004177415A JP 2004029995 A JP2004029995 A JP 2004029995A JP 2004029995 A JP2004029995 A JP 2004029995A JP 2004177415 A JP2004177415 A JP 2004177415A
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- flow cell
- substrate
- phosphoramidite
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Abstract
【解決手段】 ヌクレオチドから保護基を除去する方法であって、H2Oで希釈されたアルキルアミンを用いて該ヌクレオチドを脱保護する工程を含む、方法。
【選択図】 なし
Description
本願は、1998年2月6日出願の出願シリアル番号09/019、881の一部継続出願であり、本発明の譲受人に譲渡されている。
図1は、RNAまたはDNAのような生物学的物質のアレイを形成および分析するためのコンピューター化システムを図示する。コンピューター100は、RNAまたはDNAのような生物学的ポリマーのアレイを設計するために用いられる。コンピューター100は、例えば、適切にプログラムされたSun Workstationまたはパーソナルコンピューターまたはワークステーション(例えば、適切なメモリーおよびCPUを含むIBM PC等価物)であり得る。コンピューターシステム100は、目的の遺伝子の所望の特性に関するユーザーからの入力、およびアレイの所望の特徴に関する他の入力を得る。必要に応じて、このコンピューターシステムは、GenBankのような外部および内部のデータベース102から目的の特定の遺伝子配列に関する情報を獲得し得る。コンピューターシステム100の出力は、PCT出願WO92/10092に記載のように、例えば、スイッチマトリックスの形態のチップ設計コンピューターファイル104、および他の関連コンピューターファイルのセットである。PCT出願WO92/10092は、すべての目的のためにその全体が参考として本明細書において援用されている。
3’AGAACGT
AGAACGA
AGAACGG
AGAACGC
・
・
・
配列5‘−TCTTGCAを用いたフルオレセイン標識(または他で標識した)標的がアレイに曝露される場合、これは、プローブ3’−AGAACGTのみに相補的であり、そしてフルオレセインは、3’−AGAACGTが位置される基板の表面で見出される。対照的に、5’−TCTTGCTがアレイに曝露される場合、これは、3’−AGAACGAにのみ(または最も強く)結合する。標的がプローブのアレイに最も強力にハイブリズする位置を同定することにより、本明細書中の本発明を用いてこのようなアレイから配列情報を抽出することが可能になる。
本発明は、物質のアレイの調製のための改変された方法および装置を提供する、ここで、それぞれのアレイは、基板の表面に会合するポリマー、低分子または無機物質の事前に選択された収集体を含む。本発明の1つの実施態様では、アレイの製造の間に、静電気を除去する方法が記載される。静電気除去の方法は、イオン化ファンまたはイオン棒の使用を含み得るがこれに限定されない。詳細には、静電気除去のための装置は、フローセルにおけるそれぞれの入口および出口に設置される。本発明の別の実施態様では、最適化されたフローセルの幾何学的条件が提供される。本発明の別の実施態様では、アレイ製造の間、ホスホラミダイトの導入が提供される。本発明の別の実施態様では、新規の脱保護溶液が提供される。
アレイ:アレイは、基板の表面に会合される異なるポリマー配列、低分子または無機物質の事前選択された収集体である。アレイは、モノマーの特定の基礎的なセットから作製されるすべての可能性のあるモノマー配列を有する所定の長さのポリマーまたはこのようなアレイの特定のサブセットを含み得る。他の場合において、アレイは、無機物質から形成され得る(Schultzら、PCT出願WO 96/11878(すべての目的のためにその全体が参考として本明細書に援用される)を参照のこと)。
物質のアレイの合成のための方法は、以前に記載されている。例えば、単一の基板上で、多くのポリマー配列(オリグヌクレオチドおよびペプチドを含む)のアレイを合成する方法は、記載されている。米国特許第5,143,854号、および5,384,261号および公開PCT出願番号WO92/10092(これらの各々は、全ての目的のためにその全体が参考として、本明細書中に援用される)を参照のこと。無機物質のアレイを合成するための方法もまた、記載されている。公開PCT出願番号WO96/11878を参照のこと。
Press,Washington D.C.(1984)(全ての目的のために参考として本明細書中に援用される)を参照のこと。
物質のアレイを形成するために基板の表面上で物質を製造する工程;および
該製造工程の間に静電気を除去する工程
を含む、方法。
リアクター上の静電気を操作する工程;および
該リアクターを用いて物質を製造する工程、
を含む、方法。
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含み、ここで該光分解工程は、フローセル内側で生じ、該フローセルは、0.100”と0.005”との間の深さを有する、工程;および
化学反応を実施する工程であって、ここで該化学反応は、該フローセル内側で生じる、工程、
を含む、方法。
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含む、工程;および
化学反応を実施する工程であって、ここで該化学反応は、前記フローセル内側で生じ、ここで該化学反応は、5’ヒドロキシルの位置で光保護された3’−O−活性化ホスホラミダイトヌクレオシド(ホスホラミダイト)の付加を含み、ここで該ホスホラミダイトが1mM〜約100mMの濃度で存在する、工程;
を含む、方法。
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含む、工程;および
化学反応を実施する工程であって、ここで該化学反応は、フローセル内側で生じ、ここで該フローセルは、詰め物および該フローセルの本体が、近接表面を形成するように製造され、ここで該基板は該フローセルの本体に接触する工程;
を含む、方法。
有機物質のアレイを形成するために基板の表面上で物質を製造する工程、および;
該製造工程の間に静電気を除去する工程;
を含む、方法。
物質のアレイを形成するために基板の表面上で物質を製造する工程であって、ここで該物質は、核酸を含むポリマーである、工程;および
該製造工程の間に静電気を除去する工程;
を含む、方法。
有機ポリマー物質のアレイを形成するために基板の表面上に物質を製造する工程;および
該製造工程の間に静電気を除去する工程;
を含む、方法。
リアクター上の静電気を操作する工程、および;
該リアクターを用いて物質を製造する工程であって、ここで該物質は、生物学的な化合物である、工程;
を含む、方法。
リアクター上の静電気を操作する工程、および;
該リアクターを用いて物質を製造する工程であって、ここで該物質は、有機ポリマーである、工程;
を含む、方法。
リアクター上の静電気を操作する工程、および;
該リアクターを用いて物質を製造する工程であって、ここで該物質は、核酸である、工程;
を含む、方法。
一時的イオン化ファンは、高い可変性の静電荷が、アレイ製造装置上で検出される領域に、またはその領域の近くに、最初に設置される。表1は、イオン化エミッターファンが、クリーンルームのポッド中に設置された前に、行われた電界の強度の測定を示す。全ての測定は、Ion Systems,Inc.のModel 775PVS電界強度計を用いて行った。
Claims (26)
- アレイ製造方法であって、以下:
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含み、ここで該光分解工程は、フローセル内側で生じ、該フローセルは、0.100”と0.005”との間の深さを有する、工程;および
化学反応を実施する工程であって、ここで該化学反応は、該フローセル内側で生じる、工程、
を含む、方法。 - 前記深さが0.05”と0.005”との間である、請求項1に記載の方法。
- 前記深さが0.032”と0.010”との間である、請求項1に記載の方法。
- 前記深さが約0.020”である、請求項1に記載の方法。
- 前記フローセルが5”の幅および5”の長さを有する、請求項1に記載の方法。
- 請求項1に記載の方法であって、前記化学反応が以下:
5’ヒドロキシルの位置で光保護された3’−O−活性化ホスホラミダイト化ヌクレオシド(ホスホラミダイト)の付加、を含み、ここで該ホスホラミダイトが1mM〜約100mMの濃度で存在する、方法。 - 前記ホスホラミダイトが10mM〜約50mMの濃度で存在する、請求項6に記載の方法。
- 前記ホスホラミダイトが15mM〜約30mMの濃度で存在する、請求項6に記載の方法。
- 前記ホスホラミダイトが約20mMの濃度で存在する、請求項6に記載の方法。
- 請求項1に記載の方法であって、ここで前記フローセルは、詰め物および該フローセルの本体が、近接表面を形成するように製造され、ここで前記基板は該フローセル本体に接触する、方法。
- 請求項10に記載の方法であって、ここで前記近接表面は、前記詰め物が溝に適合するように、該溝を前記本体内に機械加工することにより形成される、方法。
- 前記詰め物がo−リングを封入する、請求項10に記載の方法。
- アレイ製造方法であって、以下:
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含む、工程;および
化学反応を実施する工程であって、ここで該化学反応は、前記フローセル内側で生じ、ここで該化学反応は、5’ヒドロキシルの位置で光保護された3’−O−活性化ホスホラミダイトヌクレオシド(ホスホラミダイト)の付加を含み、ここで該ホスホラミダイトが1mM〜約100mMの濃度で存在する、工程;
を含む、方法。 - 前記ホスホラミダイトが10mM〜約50mMの濃度で存在する、請求項13に記載の方法。
- 前記ホスホラミダイトが15mM〜約30mMの濃度で存在する、請求項13に記載の方法。
- 前記ホスホラミダイトが約20mMの濃度で存在する、請求項13に記載の方法。
- アレイ製造方法であって、以下:
基板上で光分解工程を実施する工程であって、ここで該基板は、その表面上に官能基を含む、工程;および
化学反応を実施する工程であって、ここで該化学反応は、フローセル内側で生じ、ここで該フローセルは、詰め物および該フローセルの本体が、近接表面を形成するように製造され、ここで該基板は該フローセルの本体に接触する工程;
を含む、方法。 - 請求項17に記載の方法であって、ここで前記近接表面は、前記詰め物が溝に適合するように、該溝を前記本体内に機械加工することにより形成される、方法。
- 前記詰め物がo−リングを封入する、請求項17に記載の方法。
- 請求項17に記載の方法であって、以下:
前記フローセルの入口点および出口点に静電除去装置を配置する工程、
をさらに含む、方法。 - 前記静電除去装置がイオン化ファンを含む、請求項20に記載の方法。
- 前記静電除去装置がイオン棒を含む、請求項20に記載の方法。
- 前記静電除去装置が少なくとも1つのイオン化ファンおよび少なくとも1つのイオン棒の配列を含む、請求項20に記載の方法。
- 前記フローセルの少なくとも1つの表面がステンレス鋼から作製される、請求項1に記載の方法。
- 前記フローセルの少なくとも1つの表面がガラスから作製される、請求項1に記載の方法。
- 前記ガラスがホウケイ酸ガラスである、請求項25に記載の方法。
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| US09/019,881 US6150147A (en) | 1998-02-06 | 1998-02-06 | Biological array fabrication methods with reduction of static charge |
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| JP2004029996A Pending JP2004144768A (ja) | 1998-02-06 | 2004-02-05 | アレイ製造方法 |
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| US7220549B2 (en) | 2004-12-30 | 2007-05-22 | Helicos Biosciences Corporation | Stabilizing a nucleic acid for nucleic acid sequencing |
| US7482120B2 (en) | 2005-01-28 | 2009-01-27 | Helicos Biosciences Corporation | Methods and compositions for improving fidelity in a nucleic acid synthesis reaction |
| US7666593B2 (en) | 2005-08-26 | 2010-02-23 | Helicos Biosciences Corporation | Single molecule sequencing of captured nucleic acids |
| US20070202515A1 (en) * | 2005-10-12 | 2007-08-30 | Pathologica, Llc. | Promac signature application |
| US7889347B2 (en) | 2005-11-21 | 2011-02-15 | Plexera Llc | Surface plasmon resonance spectrometer with an actuator driven angle scanning mechanism |
| US7463358B2 (en) * | 2005-12-06 | 2008-12-09 | Lumera Corporation | Highly stable surface plasmon resonance plates, microarrays, and methods |
| US7397546B2 (en) | 2006-03-08 | 2008-07-08 | Helicos Biosciences Corporation | Systems and methods for reducing detected intensity non-uniformity in a laser beam |
| DE602007011651D1 (de) * | 2006-10-24 | 2011-02-10 | Koninkl Philips Electronics Nv | Nachweis von zielmolekülen durch lumineszenz |
| US20110092380A1 (en) * | 2006-12-29 | 2011-04-21 | Febit Holding Gmbh | Improved molecular-biological processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3874916A (en) * | 1972-06-23 | 1975-04-01 | Radiant Energy Systems | Mask alignment system for electron beam pattern generator |
| US4677520A (en) * | 1985-09-13 | 1987-06-30 | James Price | Static charge protector for integrated circuits |
| US4689715A (en) * | 1986-07-10 | 1987-08-25 | Westward Electronics, Inc. | Static charge control device having laminar flow |
| US5167326A (en) * | 1990-03-19 | 1992-12-01 | R. H. Murphy Co., Inc. | Carriers for integrated circuits and the like |
| JP2568006B2 (ja) * | 1990-08-23 | 1996-12-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | イオン化空気により対象物から電荷を放電させる方法及びそのための装置 |
| US5384261A (en) * | 1991-11-22 | 1995-01-24 | Affymax Technologies N.V. | Very large scale immobilized polymer synthesis using mechanically directed flow paths |
| EP0695941B1 (en) * | 1994-06-08 | 2002-07-31 | Affymetrix, Inc. | Method and apparatus for packaging a chip |
| US5679773A (en) * | 1995-01-17 | 1997-10-21 | Affymax Technologies N.V | Reagants and methods for immobilized polymer synthesis and display |
| JPH09223673A (ja) * | 1996-02-19 | 1997-08-26 | Daido Steel Co Ltd | 半導体基板の除電方法 |
-
1998
- 1998-02-06 US US09/019,881 patent/US6150147A/en not_active Expired - Lifetime
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1999
- 1999-02-05 CA CA002320947A patent/CA2320947A1/en not_active Abandoned
- 1999-02-05 EP EP99905778A patent/EP1051430A2/en not_active Withdrawn
- 1999-02-05 AU AU25864/99A patent/AU2586499A/en not_active Abandoned
- 1999-02-05 JP JP2000530533A patent/JP3495702B2/ja not_active Expired - Lifetime
- 1999-02-05 WO PCT/US1999/002515 patent/WO1999040105A2/en not_active Ceased
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2003
- 2003-01-16 JP JP2003008899A patent/JP2003240782A/ja not_active Withdrawn
-
2004
- 2004-02-05 JP JP2004029996A patent/JP2004144768A/ja active Pending
- 2004-02-05 JP JP2004029995A patent/JP2004177415A/ja active Pending
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2005
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|---|---|
| WO1999040105A2 (en) | 1999-08-12 |
| JP2003240782A (ja) | 2003-08-27 |
| EP1051430A2 (en) | 2000-11-15 |
| WO1999040105A3 (en) | 1999-11-11 |
| JP2005283589A (ja) | 2005-10-13 |
| AU2586499A (en) | 1999-08-23 |
| JP2004144768A (ja) | 2004-05-20 |
| JP3495702B2 (ja) | 2004-02-09 |
| CA2320947A1 (en) | 1999-08-12 |
| JP2002527717A (ja) | 2002-08-27 |
| US6150147A (en) | 2000-11-21 |
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