JP2004152827A - Solar cell element and method of manufacturing the same - Google Patents
Solar cell element and method of manufacturing the same Download PDFInfo
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- JP2004152827A JP2004152827A JP2002313795A JP2002313795A JP2004152827A JP 2004152827 A JP2004152827 A JP 2004152827A JP 2002313795 A JP2002313795 A JP 2002313795A JP 2002313795 A JP2002313795 A JP 2002313795A JP 2004152827 A JP2004152827 A JP 2004152827A
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- magnesium
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- cell element
- aluminum
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 24
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000000605 extraction Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 25
- 239000011777 magnesium Substances 0.000 claims description 19
- 229910052749 magnesium Inorganic materials 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- BHSXLOMVDSFFHO-UHFFFAOYSA-N (3-ethylsulfanylphenyl)methanamine Chemical compound CCSC1=CC=CC(CN)=C1 BHSXLOMVDSFFHO-UHFFFAOYSA-N 0.000 claims description 3
- -1 magnesium aluminate Chemical class 0.000 claims description 3
- MODMKKOKHKJFHJ-UHFFFAOYSA-N magnesium;dioxido(dioxo)molybdenum Chemical compound [Mg+2].[O-][Mo]([O-])(=O)=O MODMKKOKHKJFHJ-UHFFFAOYSA-N 0.000 claims description 3
- DJZHPOJZOWHJPP-UHFFFAOYSA-N magnesium;dioxido(dioxo)tungsten Chemical compound [Mg+2].[O-][W]([O-])(=O)=O DJZHPOJZOWHJPP-UHFFFAOYSA-N 0.000 claims description 3
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 abstract description 5
- 230000001747 exhibiting effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
【課題】太陽電池素子の裏面にアルミニウムなどからなる電極材料を焼き付ける際に球状の突起や凹凸が発生することを防止する。
【解決手段】一導電型を呈する半導体基板の一主面側に他の導電型を呈する領域と表面電極とを設けると共に、他の主面側に主としてアルミニウムとガラス成分からなる集電部と、この集電部よりも半田濡れ性のよい金属を主成分とする出力取出部とからなる裏面電極を設けた太陽電池素子であって、上記集電部に酸化マグネシウムを含有することを特徴とする。
【選択図】 図１An object of the present invention is to prevent the occurrence of spherical projections and irregularities when baking an electrode material made of aluminum or the like on the back surface of a solar cell element.
A semiconductor substrate exhibiting one conductivity type is provided with a region exhibiting another conductivity type and a surface electrode on one main surface side of the semiconductor substrate, and a current collector mainly composed of aluminum and a glass component is provided on the other main surface side; A solar cell element provided with a back electrode composed of an output extraction section mainly composed of a metal having better solder wettability than the current collection section, wherein the current collection section contains magnesium oxide. .
[Selection diagram] Fig. 1
Description
【０００１】
【発明の属する技術分野】
本発明は太陽電池素子とその製造方法に関し、特にアルミニウム粉末を主成分とする裏面電極を設けた太陽電池素子に関する。
【０００２】
【従来の技術】
従来の太陽電池素子は、例えばＰ型シリコンなどからなる半導体基板の表面近傍全面に一定の深さまでＮ型不純物を拡散させてＮ型を呈する拡散層を設け、半導体基板の表面に窒化シリコン膜などからなる反射防止膜を設け、表面に銀からなる電極材料を櫛状のパターンで印刷するとともに、裏面には銀などからなる出力取出部とアルミニウムなどからなる集電部を印刷した後、焼き付けることにより電極を形成する。このとき、集電部のアルミニウムが半導体基板に拡散し、Ｐ＋層を形成する。このＰ＋層は基板内部で発生したキャリアが裏面で再結合するのを防ぐため、太陽電池素子の特性が向上する。
【０００３】
【発明が解決しようとする課題】
しかし、従来の太陽電池素子では、アルミニウムなどからなる電極材料を半導体基板に焼き付ける際に、アルミニウムと半導体基板の界面で形成された合金が表面張力によって凝集し、アルミニウム電極を突き抜けて表面で凝固して球状の突起を多数発生させたり、凝集した合金が界面で凝固してアルミニウム電極に凹凸が形成されてしまうという問題があった。そのため、次工程での製造プロセスにおいて、自動機のハンドリングミス等が生じたり、セルの割れや欠けが生じることがあった。
【０００４】
本発明は、このような従来の問題点に鑑みてなされたものであり、太陽電池素子の裏面にアルミニウムなどからなる電極材料を焼き付ける際に、球状の突起や凹凸が発生することを防いだ太陽電池素子とその製造方法を提供することを目的とする。
【０００５】
【課題を解決するための手段】
上記目的を達成するために、請求項１に係る太陽電池素子は、一導電型を呈する半導体基板の一主面側に他の導電型を呈する領域と表面電極とを設けると共に、他の主面側に主としてアルミニウムとガラス成分からなる集電部と、この集電部よりも半田濡れ性のよい金属を主成分とする出力取出部とからなる裏面電極を設けた太陽電池素子において、前記集電部に酸化マグネシウムを含有することを特徴とする。
【０００６】
前記酸化マグネシウムを前記アルミニウム１００重量部に対して０．０５〜５重量部含有することが望ましい。
【０００７】
また請求項３に係る太陽電池素子の製造方法においては、一導電型を呈する半導体基板の一主面側に他の導電型を呈する領域と表面電極とを設けると共に、他の主面側に主としてアルミニウムとガラス成分からなる集電部と、この集電部よりも半田濡れ性のよい金属を主成分とする出力取出部とからなる裏面電極を設けた太陽電池素子の製造方法において、前記集電部を酸化マグネシウムもしくは金属酸マグネシウムを含有したペーストを焼き付けることによって形成することを特徴とする。
【０００８】
前記金属酸マグネシウムはアルミン酸マグネシウム、マグネシウム・鉄酸化物、モリブデン酸マグネシウム、インジウム酸マグネシウム、スズ酸マグネシウム、チタン酸マグネシウム、タングステン酸マグネシウム、ジルコン酸マグネシウムのうちの一種以上からなることが望ましい。
【０００９】
【発明の実施の形態】
以下、本発明の実施形態を図１に基づき詳細に説明する。
本発明に係る太陽電池素子も構造自体は従来の太陽電池素子と略同様である。すなわち、例えばＰ型シリコンなどからなる半導体基板１の表面近傍の全面に一定の深さまでＮ型不純物を拡散させてＮ型を呈する拡散層２を設け、半導体基板１の表面に窒化シリコン膜などからなる反射防止膜３を設け、表面に表面電極４を設けるとともに、裏面にはアルミニウムなどからなる集電部５と銀などからなる出力取出部６で構成される裏面電極を設けている。
【００１０】
このような太陽電池素子は、例えばＰ型半導体基板１をＮ型不純物雰囲気中で熱処理などして、表面領域の全面に一定の深さまでＮ型不純物を拡散させてＮ型を呈する拡散層２を形成し、ＣＶＤ法などで反射防止膜３を形成して拡散層２を分離した後、表面に銀ペーストを主成分とする電極ペーストをスクリーン印刷するとともに、裏面には酸化マグネシウムまたは金属酸マグネシウムを含有し、アルミニウムと有機ビヒクルを主成分とする電極ペーストをスクリーン印刷して６８０〜７８０℃程度で焼き付けることにより、表面電極４、および集電部５と出力取出部６からなる裏面電極を形成する。
【００１１】
裏面電極を焼き付ける際に、アルミニウムと半導体基板１との界面に形成される合金に電極材料中のマグネシウムが溶解し、合金の表面張力が軽減されて凝集を防ぐ。これにより、アルミニウム表面の球状の突起や凹凸の発生を抑制することができる。これはアルミニウムペーストに酸化マグネシウムもしくは金属酸マグネシウムのどちらを添加しても同様に得られる効果である。金属酸マグネシウムを添加した場合は、焼き付けることによって酸化マグネシウムのみが合金層と反応し、残りの金属もしくは金属酸化物はアルミニウム中に点在することになる。
【００１２】
このとき集電部５中に金属マグネシウムを混合すると、半導体基板１と激しく反応して基板１中に深いスパイクを形成し、ｐｎ接合を突き抜ける場合があり、リーク電流が増加して太陽電池特性が低下するため、酸化マグネシウムまたは金属酸マグネシウムの形で含有させる必要がある。
【００１３】
上記酸化マグネシウムもしくは金属酸マグネシウムは焼き付け後の集電部５中のアルミニウム１００重量部に対して酸化マグネシウムを０．０５〜５重量部含有するように添加することが望ましい。酸化マグネシウムの含有量が０．０５重量部未満ではアルミニウム表面の球状の突起や凹凸が発生し、５重量部以上ではアルミニウム電極の抵抗値が増大して太陽電池特性の低下を招く。この酸化マグネシウムの含有量はＳＩＭＳによって測定することができる。
【００１４】
また、集電部５の材料中には少量のガラスフリットを含有させてもよい。ガラスフリットはアルミニウム粉末同士の焼結を抑制してアルミニウムを主成分とする集電部５の収縮を防ぐため、セルの反りが減少して後工程で取扱い易くなる。
【００１５】
上記金属酸マグネシウムは、アルミン酸マグネシウム、マグネシウム・鉄酸化物、モリブデン酸マグネシウム、インジウム酸マグネシウム、スズ酸マグネシウム、チタン酸マグネシウム、タングステン酸マグネシウム、ジルコン酸マグネシウムのうちの一種以上からなることが望ましい。例えばハロゲン化物のような金属酸マグネシウム以外のマグネシウム化合物を添加すると焼成時に有毒ガスが発生し、作業上不向きである。
【００１６】
【実施例】
以下に本発明の実施例を示す。半導体基板１として１５ｃｍ角で厚さ０．３ｍｍ、比抵抗１．５Ω・ｃｍのＰ型多結晶シリコン基板を準備し、ダメージ層除去のため、アルカリ水溶液で表面を２０μｍエッチングした。そして、熱拡散法でオキシ塩化リン（ＰＯＣｌ３）を拡散源として深さ０．５μｍのＮ型拡散層２を形成した。次に、表面にプラズマＣＶＤ法で窒化シリコンの反射防止膜３を８００Åの厚さで形成した後、拡散層２を分離した。
【００１７】
次に、シリコン基板１の裏面にアルミニウムペーストおよび酸化マグネシウムを添加したアルミニウムペーストをそれぞれ印刷して乾燥するとともに、銀ペーストを印刷して乾燥した。また、表面に銀ペーストを印刷して乾燥して７００℃で焼成することによって表面電極４、および集電部５と出力取出部６からなる裏面電極を形成した。その後、溶融した半田槽の中に浸漬して表面電極４および裏面電極の出力取出部６を上に半田槽（不図示）を形成し、太陽電池素子を形成した。裏面の集電部５上に形成された球状突起の個数および太陽電池素子の出力特性を表１に示す。各条件のサンプル数はそれぞれ１０枚で、球状突起の個数は１０枚の合計の個数であり、出力特性は１０枚の平均特性である。
【００１８】
【表１】
集電部５に含有される酸化マグネシウムのアルミニウムに対する比率が０．０２５％（条件Ｎｏ．２）のときは集電部５上の球状突起は８２個であったのに対し、０．０５％（条件Ｎｏ．３）では３８個に減少する。酸化マグネシウムの含有率を０．１％以上（条件Ｎｏ．４以降）に増やしても、球状突起の個数は０．０５％（条件Ｎｏ．３）の場合とほとんど変わらない
しかし、集電部５中に含有される酸化マグネシウムをアルミニウムに対して１０％（条件Ｎｏ．８）にすると、含有比率が５％以下（条件Ｎｏ．１〜７）の場合に比較して短絡電流、開放電圧、曲線因子（Ｆ．Ｆ．）のすべてが低下する。
【００２０】
つまり条件Ｎｏ．３〜７のときに、球状突起の数が減少し、出力特性の低下も発生しない。
【００２１】
また同じように集電部５にアルミニウムペーストおよびチタン酸マグネシウムを添加したアルミニウムペースト使用した時の集電部５上に形成された球状突起の個数および太陽電池素子の出力特性を表２に示す。このときの各条件のサンプル数もそれぞれ１０枚で、球状突起の個数は１０枚の合計の個数であり、出力特性は１０枚の平均特性である。
【００２２】
【表２】
集電部５に含有される酸化マグネシウムのアルミニウムに対する比率が０．０２５％（条件Ｎｏ．２）のとき集電部５上の球状突起は８５個であったのに対し、０．０５％（条件Ｎｏ．３）では４１個に減少する。酸化マグネシウムの含有率を０．１％以上（条件Ｎｏ．４以降）に増やしても、球状突起の個数は０．０５％（条件Ｎｏ．３）の場合とほとんど変わらない
しかし、集電部５中に含有される酸化マグネシウムをアルミニウムに対して１０％（条件Ｎｏ．８）にすると、含有比率が５％以下（条件Ｎｏ．１〜７）の場合に比較して短絡電流、開放電圧、曲線因子（Ｆ．Ｆ．）のすべてが低下する。
【００２４】
つまり条件Ｎｏ．３〜７のときに、球状突起の数が減少し、出力特性の低下も発生しない。
【００２５】
アルミニウム電極表面に球状の突起や凹凸が発生するのを抑制する作用をもたらすのは酸化マグネシウムであるので、他の金属酸マグネシウムを使用したときも同様の効果を得ることができる。
【００２６】
【発明の効果】
以上のように、本発明に係る太陽電池素子では、裏面電極の集電部に酸化マグネシウムを含有することから、電極を焼付ける際に裏面電極の集電部のアルミニウム表面の微小な玉や凹凸の発生を防ぐことができ、従来問題であったアルミニウム表面の微小な玉や凹凸による後工程での歩留の低下を極力低減することができる。
【図面の簡単な説明】
【図１】本発明に係る太陽電池素子を示す図である。
【符号の説明】
１・・・半導体基板、２・・・拡散層、３・・・反射防止膜、４・・・表面電極、５・・・集電部、６・・・出力取出部[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a solar cell element and a method for manufacturing the same, and more particularly to a solar cell element provided with a back electrode mainly composed of aluminum powder.
[0002]
[Prior art]
In a conventional solar cell element, for example, an N-type impurity is diffused to a certain depth over an entire surface near a surface of a semiconductor substrate made of P-type silicon to provide an N-type diffusion layer, and a silicon nitride film or the like is provided on the surface of the semiconductor substrate. An anti-reflection film made of silver is printed on the surface with an electrode material made of silver in a comb-like pattern, and an output extraction part made of silver etc. and a current collecting part made of aluminum etc. are printed on the back side and then baked. To form an electrode. At this time, the aluminum in the current collector diffuses into the semiconductor substrate to form a P + layer. The P + layer prevents carriers generated inside the substrate from being recombined on the back surface, so that the characteristics of the solar cell element are improved.
[0003]
[Problems to be solved by the invention]
However, in a conventional solar cell element, when an electrode material such as aluminum is baked on a semiconductor substrate, an alloy formed at an interface between the aluminum and the semiconductor substrate aggregates due to surface tension, penetrates through the aluminum electrode, and solidifies on the surface. Therefore, there are problems that a large number of spherical projections are generated, and that the aggregated alloy is solidified at the interface to form irregularities on the aluminum electrode. For this reason, in the manufacturing process in the next step, handling errors of the automatic machine or the like may occur, or cells may be cracked or chipped.
[0004]
The present invention has been made in view of such a conventional problem, and has disclosed a solar cell that prevents the occurrence of spherical protrusions and irregularities when baking an electrode material made of aluminum or the like on the back surface of a solar cell element. An object is to provide a battery element and a method for manufacturing the same.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a solar cell element according to claim 1 is provided with a region having another conductivity type and a surface electrode on one main surface side of a semiconductor substrate having one conductivity type, and another main surface. A solar cell element provided on the side with a back electrode composed of a current collecting portion mainly made of aluminum and a glass component and an output extracting portion mainly composed of a metal having better solder wettability than the current collecting portion; It is characterized in that the part contains magnesium oxide.
[0006]
It is desirable that the magnesium oxide be contained in an amount of 0.05 to 5 parts by weight based on 100 parts by weight of the aluminum.
[0007]
Further, in the method for manufacturing a solar cell element according to
[0008]
The magnesium metalate preferably comprises at least one of magnesium aluminate, magnesium / iron oxide, magnesium molybdate, magnesium indium, magnesium stannate, magnesium titanate, magnesium tungstate, and magnesium zirconate.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG.
The structure of the solar cell element according to the present invention is substantially the same as that of a conventional solar cell element. That is, an N-type impurity is diffused to a certain depth over the entire surface near the surface of a semiconductor substrate 1 made of, for example, P-type silicon to provide an N-
[0010]
In such a solar cell element, for example, a P-type semiconductor substrate 1 is heat-treated in an N-type impurity atmosphere to diffuse an N-type impurity to a certain depth over the entire surface region to form an N-
[0011]
When the back electrode is baked, magnesium in the electrode material is dissolved in the alloy formed at the interface between the aluminum and the semiconductor substrate 1, and the surface tension of the alloy is reduced to prevent agglomeration. Thereby, the occurrence of spherical protrusions and irregularities on the aluminum surface can be suppressed. This is an effect that can be similarly obtained by adding either magnesium oxide or magnesium metal oxide to the aluminum paste. When magnesium metal oxide is added, only the magnesium oxide reacts with the alloy layer by baking, and the remaining metal or metal oxide is scattered in aluminum.
[0012]
At this time, if metallic magnesium is mixed in the current collector 5, it reacts violently with the semiconductor substrate 1 to form a deep spike in the substrate 1, which may penetrate the pn junction, increasing the leakage current and increasing the solar cell characteristics. Therefore, it is necessary to contain the same in the form of magnesium oxide or magnesium metal oxide.
[0013]
The magnesium oxide or magnesium metal oxide is desirably added so as to contain 0.05 to 5 parts by weight of magnesium oxide with respect to 100 parts by weight of aluminum in the current collector 5 after baking. If the content of magnesium oxide is less than 0.05 parts by weight, spherical projections and irregularities on the aluminum surface are generated, and if the content is 5 parts by weight or more, the resistance value of the aluminum electrode is increased and the solar cell characteristics are deteriorated. The content of the magnesium oxide can be measured by SIMS.
[0014]
Further, a small amount of glass frit may be contained in the material of the current collector 5. The glass frit suppresses the sintering of the aluminum powders to prevent the current collector 5 containing aluminum as a main component from shrinking, so that the cell warp is reduced and the glass frit is easy to handle in a later step.
[0015]
The magnesium metalate is desirably composed of one or more of magnesium aluminate, magnesium / iron oxide, magnesium molybdate, magnesium indate, magnesium stannate, magnesium titanate, magnesium tungstate, and magnesium zirconate. For example, when a magnesium compound other than magnesium metal oxide such as a halide is added, a toxic gas is generated at the time of firing, which is not suitable for work.
[0016]
【Example】
Examples of the present invention will be described below. A P-type polycrystalline silicon substrate having a size of 15 cm square, a thickness of 0.3 mm, and a specific resistance of 1.5 Ω · cm was prepared as the semiconductor substrate 1, and its surface was etched by 20 μm with an alkaline aqueous solution to remove a damaged layer. Then, an N-
[0017]
Next, an aluminum paste and an aluminum paste to which magnesium oxide was added were printed and dried on the back surface of the silicon substrate 1, and a silver paste was printed and dried. Further, a silver paste was printed on the surface, dried, and baked at 700 ° C. to form a
[0018]
[Table 1]
When the ratio of magnesium oxide to aluminum contained in the current collector 5 was 0.025% (condition No. 2), the number of spherical projections on the current collector 5 was 82, whereas 0.05% was used. In (condition No. 3), the number is reduced to 38. Even if the content of magnesium oxide is increased to 0.1% or more (condition No. 4 or later), the number of spherical projections is almost the same as in the case of 0.05% (condition No. 3). When the magnesium oxide contained therein is 10% (condition No. 8) with respect to aluminum, the short-circuit current, open-circuit voltage, and curve are lower than when the content ratio is 5% or less (conditions No. 1 to 7). All of the factors (FF) decrease.
[0020]
That is, condition No. When the number is 3 to 7, the number of spherical projections decreases, and the output characteristics do not deteriorate.
[0021]
Similarly, Table 2 shows the number of spherical projections formed on the current collector 5 and the output characteristics of the solar cell element when an aluminum paste obtained by adding aluminum paste and magnesium titanate to the current collector 5 was used. At this time, the number of samples under each condition is also ten, the number of spherical projections is the total number of ten, and the output characteristic is the average characteristic of ten.
[0022]
[Table 2]
When the ratio of magnesium oxide to aluminum contained in the current collector 5 was 0.025% (condition No. 2), the number of spherical protrusions on the current collector 5 was 85, whereas 0.05% ( In condition No. 3), the number is reduced to 41. Even if the content of magnesium oxide is increased to 0.1% or more (condition No. 4 or later), the number of spherical projections is almost the same as in the case of 0.05% (condition No. 3). When the magnesium oxide contained therein is 10% (condition No. 8) with respect to aluminum, the short-circuit current, open-circuit voltage, and curve are lower than when the content ratio is 5% or less (conditions No. 1 to 7). All of the factors (FF) decrease.
[0024]
That is, condition No. When the number is 3 to 7, the number of spherical projections decreases, and the output characteristics do not deteriorate.
[0025]
Since magnesium oxide has the effect of suppressing the generation of spherical protrusions and irregularities on the surface of the aluminum electrode, the same effect can be obtained when another magnesium metal oxide is used.
[0026]
【The invention's effect】
As described above, in the solar cell element according to the present invention, since the current collecting portion of the back electrode contains magnesium oxide, fine particles or irregularities on the aluminum surface of the current collecting portion of the back electrode when firing the electrode. Can be prevented, and a decrease in the yield in the subsequent process due to minute balls or unevenness on the aluminum surface, which has been a problem in the past, can be reduced as much as possible.
[Brief description of the drawings]
FIG. 1 is a view showing a solar cell element according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Diffusion layer, 3 ... Anti-reflection film, 4 ... Surface electrode, 5 ... Current collection part, 6 ... Output extraction part
Claims (4)
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| JP2002313795A JP4272405B2 (en) | 2002-10-29 | 2002-10-29 | Method for manufacturing solar cell element |
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| JP2002313795A JP4272405B2 (en) | 2002-10-29 | 2002-10-29 | Method for manufacturing solar cell element |
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| JP4272405B2 JP4272405B2 (en) | 2009-06-03 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093418A (en) * | 2004-09-24 | 2006-04-06 | Sharp Corp | Manufacturing method for solar battery |
| WO2007032151A1 (en) * | 2005-09-13 | 2007-03-22 | Toyo Aluminium Kabushiki Kaisha | Aluminum paste composition and solar cell element making use of the same |
| JP2008166344A (en) * | 2006-12-27 | 2008-07-17 | Kyocera Corp | Conductive paste for photoelectric conversion element, photoelectric conversion element, and method for producing photoelectric conversion element |
| WO2009152238A3 (en) * | 2008-06-11 | 2010-09-10 | E. I. Du Pont De Nemours And Company | A process of forming a silicon solar cell |
| KR100990109B1 (en) | 2008-07-28 | 2010-10-29 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
| JP2011096853A (en) * | 2009-10-29 | 2011-05-12 | Mitsubishi Electric Corp | Solar battery cell and manufacturing method thereof |
| US8017428B2 (en) | 2009-06-10 | 2011-09-13 | E. I. Du Pont De Nemours And Company | Process of forming a silicon solar cell |
-
2002
- 2002-10-29 JP JP2002313795A patent/JP4272405B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093418A (en) * | 2004-09-24 | 2006-04-06 | Sharp Corp | Manufacturing method for solar battery |
| WO2007032151A1 (en) * | 2005-09-13 | 2007-03-22 | Toyo Aluminium Kabushiki Kaisha | Aluminum paste composition and solar cell element making use of the same |
| JP2008166344A (en) * | 2006-12-27 | 2008-07-17 | Kyocera Corp | Conductive paste for photoelectric conversion element, photoelectric conversion element, and method for producing photoelectric conversion element |
| WO2009152238A3 (en) * | 2008-06-11 | 2010-09-10 | E. I. Du Pont De Nemours And Company | A process of forming a silicon solar cell |
| KR100990109B1 (en) | 2008-07-28 | 2010-10-29 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
| US8017428B2 (en) | 2009-06-10 | 2011-09-13 | E. I. Du Pont De Nemours And Company | Process of forming a silicon solar cell |
| JP2011096853A (en) * | 2009-10-29 | 2011-05-12 | Mitsubishi Electric Corp | Solar battery cell and manufacturing method thereof |
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|---|---|
| JP4272405B2 (en) | 2009-06-03 |
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