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JP2004111619A - Power module - Google Patents

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Publication number
JP2004111619A
JP2004111619A JP2002271502A JP2002271502A JP2004111619A JP 2004111619 A JP2004111619 A JP 2004111619A JP 2002271502 A JP2002271502 A JP 2002271502A JP 2002271502 A JP2002271502 A JP 2002271502A JP 2004111619 A JP2004111619 A JP 2004111619A
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JP
Japan
Prior art keywords
circuit board
resin circuit
resin
semiconductor chip
metal
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Granted
Application number
JP2002271502A
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Japanese (ja)
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JP2004111619A5 (en
JP3994381B2 (en
Inventor
Kunihiro Takenaka
竹中　国浩
Toshio Nagao
長尾　敏男
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Yaskawa Electric Corp
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Yaskawa Electric Corp
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Priority to JP2002271502A priority Critical patent/JP3994381B2/en
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Publication of JP2004111619A5 publication Critical patent/JP2004111619A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a power module that can be reduced in size, has a wide range of connecting methods for an application, does not cause a malfunctions due to electromagnetic noise, and can be manufactured with less manufacturing man-hour. <P>SOLUTION: The power module is composed of a metallic insulating substrate 4 on which a bare chip mounting area 31 is formed for mounting a bare power semiconductor chip 1, a first resin circuit board 5 connected with the electrodes of the semiconductor chip 1, and a second resin circuit board 5 on which a protective circuit mounting area 33, a driving circuit mounting area 34, and an outside connecting component mounting area 35 are formed. The second resin circuit board 8 is provided on a metallic insulating substrate 4 and the first and second resin circuit boards 5 and 8 are connected to each other. In addition, the electrodes of the power semiconductor chip 1 are connected to the first resin circuit board 5 through solder balls and the insulating substrate 4 is connected to the second resin circuit board 8 through a pin header 7 or a plated through hole. Moreover, the first and second resin circuit boards 5 and 8 are connected to each other through a solder layer. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、パワーエレクトロニクスの分野、特にモータドライブ用インバータ装置やサーボドライブ装置に使用するパワー半導体チップを内蔵したパワーモジュール及びパワー半導体装置に関する。
【０００２】
【従来の技術】
従来のパワーモジュールにおいては、複数のパワー半導体チップを内蔵し、特にパワー半導体チップがＩＧＢＴチップ及び還流ダイオードチップであるＩＧＢＴモジュールと呼ばれるものや、前記ＩＧＢＴモジュールに整流回路やゲートドライブ回路や保護回路を付加し、インテリジェント化させたインテリジェントパワーモジュールが一般的である。
以下、インテリジェントパワーモジュールについて説明する。
図８は従来のインテリジェントパワーモジュールを示す斜視図、図９はパワー半導体チップ実装部分の拡大断面図、図１０は図８の機能ブロック図である。図において、１はパワー半導体チップ、３はヒートシンク、９ははんだ層、１２はセラミック基板、１２ａはセラミック基材、１２ｂは銅配線、１３はボンディングワイヤ、１４は放熱板（主に銅ベース）、１５はケース、１６は外部接続用ピンヘッダ、１７は充填樹脂である。
３１はベアチップ実装エリアであり、図９に示すように、パワー半導体チップ１がＩＧＢＴと還流ダイオードの場合、これにより３相分のレグを構成し、パワー半導体チップ１が整流ダイオードの場合、これにより全波整流ブリッジを構成する。３３はパワー半導体チップを保護するための保護回路が実装されている保護回路実装エリア、３４はパワー半導体チップを駆動するドライブ回路を実装するドライブ回路実装エリア、３５はインバータなどのアプリケーションに使用する際の接続用部品を実装する接続部品実装エリアである。
これらを以下に示すように構成する。
図９に示すように、パワー半導体チップ１は、はんだ層９を介してヒートシンク３へダイボンディングされる。前記ヒートシンク３はセラミック基板１２上に形成された銅配線層１２ａへはんだ層９などを介して接続され、セラミック基板１２は放熱板１４へはんだ付けされる。
パワー半導体チップ１は、パワー半導体チップがＩＧＢＴチップなどのスイッチングトランジスタや還流ダイオードチップや整流ダイオードチップとなる場合があるが、上述のようにインバータ回路または全波整流回路を構成し、ベアチップ実装エリア３１に実装される。
また、保護回路実装エリア３３、ドライブ回路実装エリア３４、外部接続用ピンヘッダが実装される外部接続用部品実装エリア３５などの付加回路は、セラミック基板１２上、もしくは、樹脂製基板上に実装され、一般のプリント基板と同様に配線され、構成される。このような回路により、図８の機能を満足する。
このような回路が構成されたセラミック基板１２は、ケース１５にて覆われ、その内部の空間には、電気絶縁及び放熱効果を高めるためにエポキシ系及びシリコーン系の樹脂１７が充填され、インテリジェントパワーモジュールとなる。このインテリジェントパワーモジュールは、モータドライブ用インバータ装置やサーボドライブ装置に使用される際は、セラミック基板により絶縁されているため、そのままインバータ装置やサーボドライブ装置の冷却用ヒートシンクにネジ止めされる。
動作としては、図１０に示すように、パワー半導体チップが整流ダイオードチップの場合は、交流を直流に変換し、ＩＧＢＴチップ及び還流ダイオードチップの場合は、外部接続用ピンヘッダより、ゲート信号などが入力され、それによりＩＧＢＴチップがスイッチングし、出力端子に任意の周波数の交流電圧を得ることができる。
上述の構成以外にも、様々な構成が提案されている（例えば、特許文献１参照）。
【０００３】
【特許文献１】
特表２００１−５０１３７６号公報（第１−３頁、第１図）
【０００４】
このパワーモジュールは、図１１に示すように、導体路平面を備えた２つの支持体をサンドイッチ構造とし、それら２つの支持体間に多数の半導体チップが配置され、支持体と半導体チップとの接続は、マイクロエレクトロニクス構成部材によって接続している。　第１の導体路平面５３を備えた第１の支持体５２と第２の導体路平面５６を備えた第２の支持体５５との間に、多数の半導体チップ５４を配置する。第１の支持体は、セラミック材料からなり、第２の支持体は、セラミック材料、またはフレキシブルな支持体、例えば、プラスチックシート、とりわけポリイミドシートからなる。第１の支持体と第２の支持体との間に配置された半導体チップは、第１の支持体とは、はんだ接合され、第２の支持体との接合においては固定的接続、例えば、はんだ接合、導電性接着剤、または導電性ボールを用いて接続される。この構成により、安価で、簡単に製造でき、さらに設計自由度が高く、低インダクタンスの構造となる例があげられている。
【０００５】
【発明が解決しようとする課題】
しかしながら、上記従来の技術において、図９の構成のパワーモジュールでは、ワイヤボンディングを使用して回路の配線を行うため、ワイヤボンディングのループ高さが必要となり、また、ワイヤボンディングするパッドスペースが必要となるため、パワーモジュールの薄型化、小型化ができず、さらに、ボンディングワイヤによる配線インダクタンスにより電磁ノイズの放射や電磁ノイズによる誤動作があるという問題点があった。また、ワイヤボンディングによる製造工程では、１度のボンディングでは１本ずつしかボンディングできないため、製造工数が増加するという問題点があった。
また、特許文献１において、第１の支持体と第２の支持体によるサンドイッチ構造では、半導体チップとの接合に、例にあげられた導電性ボールを使用し、特に第１の支持体と第２の支持体は同一面積の支持体を使用するため高さ管理や電極間のブリッジ検査など、製造工程上の管理、検査項目が増えるという問題点があった。
そこで、本発明は小型化でインテリジェント化しても実装面積が小さく、かつアプリケーションとの接続方法の選択の幅が広く、電磁ノイズによる誤動作がなく、製造工数が少ないパワーモジュールを提供することを目的とする。
【０００６】
【課題を解決するための手段】
上記課題を解決するため、本発明はつぎの構成にしている。
（１）表面に配線層を設けた少なくとも１枚の基板と、その上に設けたヒートシンクと、さらにその上に実装された複数のパワー半導体チップとを有するパワーモジュールにおいて、前記基板は、前記パワー半導体チップのベアチップが実装されベアチップ実装エリアを形成する金属系絶縁基板と、前記金属系絶縁基板と対向する側に前記パワー半導体チップの電極を接続した第１の樹脂回路基板と、保護回路を形成した保護回路実装エリアとドライブ回路を形成したドライブ回路実装エリアおよび外部接続用部品実装エリアを形成した第２の樹脂回路基板とからなり、前記第２の樹脂回路基板を前記金属系絶縁基板上に設け前記第１の樹脂回路基板と前記第２の樹脂回路基板とを接続し、前記第１の樹脂回路基板と前記パワー半導体チップの電極とを、はんだボールにより接続し、前記金属系絶縁基板と前記第２の樹脂回路基板はピンヘッダもしくは、めっきスルーホールにて接続し、前記第１の樹脂回路基板と前記第２の樹脂回路基板とを、はんだ層を介して接続したものである。
本構成によれば、パワーモジュールにおけるワイヤボンディングのループ高さが不要となり、また、ワイヤボンディングするパッドスペースが不要となるため、パワーモジュールの薄型化、小型化ができる。さらに、ワイヤボンディングを使用しないため、配線インダクタンスを最小にとることができる。また、製造工程においては、パワー半導体チップ周辺の配線を一括配線で、製造工数を簡略化できる。また、ベアチップ実装エリアのみ第１の樹脂回路基板で配線するため、電極間のブリッジ検査など、検査項目も比較的容易に行うことができ、第１の樹脂回路基板に基材（フレキシブル基板）を使用することにより、実装高さ管理などの製造工程上の管理も削減できる。
（２）前記金属系絶縁基板は、アルミベースの表面に設けた基材（フレキシブル基板）と銅配線からなり、前記基材の材質をポリイミド、または、ポリエステルとし、前記基材と前記銅配線を同一平面内で拡張した拡張部を設け、前記第１の樹脂回路基板に相当する回路エリアを前記拡張部に形成し、これを折り曲げて前記パワー半導体チップの電極と接続し、前記第１の樹脂回路基板と、前記金属系絶縁基板の基材とを一体化したものである。
本構成によれば、第１の発明に加えて、部品の削減による製造工数の簡略化が可能となる。
（３）前記金属系絶縁基板と前記第１の樹脂回路基板とを金属スペーサにて接続したものである。
本構成によれば、第１から第３の発明に加えて、任意の高さで第１の樹脂回路基板を実装でき、より小型で薄型化ができる。
（４）前記第１の樹脂回路基板と前記第２の樹脂回路基板、または、前記金属スペーサの接続の際にピンヘッダなどの金属突起を介して接続したものである。
本構成によれば、第１から第４の発明に加えて、製造工程における実装位置の管理項目を削減できる。
（５）前記第１の樹脂回路基板は、基材（フレキシブル基板）と銅配線からなり、前記基材の材質にポリイミド、または、ポリエステルを用いたものである。
本構成によれば、基材（フレキシブル基板）を使用することにより、実装高さ管理などの製造工程上の管理も削減できる。
【０００７】
【発明の実施の形態】
以下、本発明の実施形態を図に基づいて説明する。
（第１の実施形態）
本発明の第１の実施形態を図１から図３に示す。図１はパワーモジュールの分解斜視図、図２は図１の側断面図、図３は図２のパワー半導体チップ部の詳細を示す部分断面図である。図において、１はパワー半導体チップ、２ははんだボール、３はヒートシンク、４は金属系絶縁基板、５は第１の樹脂回路基板で、６は保護膜、７はピンヘッダ、８は第２の樹脂回路基板、９ははんだ層、１０はスルーホールである。
金属系絶縁基板４はアルミベース４ａ、基材（樹脂基板）４ｂおよび銅配線４ｃからなり、第１の樹脂回路基板５は基材５ａ（フレキシブル基板）と銅配線（５ｂ）からなり、第２の樹脂回路基板８は基材（樹脂基板）８ａと銅配線８ｂからなる。
３１はベアチップ実装エリアであり、図１に示すように、パワー半導体チップ１がＩＧＢＴと還流ダイオードの場合、これにより３相分のレグを構成し、パワー半導体チップ１が整流ダイオードの場合、これにより全波整流ブリッジを構成する。３３はパワー半導体チップを保護するための保護回路が内蔵されている保護回路実装エリア、３４はパワー半導体チップを駆動するドライブ回路を内蔵するドライブ回路実装エリア、３５はインバータなどのアプリケーションに使用する際の接続用部品を実装する接続部品実装エリアである。
これらを以下に示すように構成する。
パワー半導体チップ１は、図３に示すように、電極を有する面と反対面がはんだ層９を介してヒートシンク３へダイボンディングされる。ヒートシンク３は、金属系絶縁基板４の銅配線４ｃへ、はんだ層９を介して接続される。パワー半導体チップ１がＩＧＢＴチップなどのスイッチングトランジスタや還流ダイオードチップや整流ダイオードチップとなる場合があるが、すべて同様の構成で銅配線４ｃへ接続される。パワー半導体チップ１の電極は、ヒートシンク３をはんだ接合した面と反対側の面にあり、はんだボール２などのマイクロ接続可能な接続バンプを介して第１の樹脂回路基板５へ接続される。このバンプは、パワー半導体チップ１に予め形成されているよりも、第１の樹脂回路基板に形成されいる方がよい。それは、製造時において、第１の樹脂回路基板５がフレキシブル基材の場合に、バンプ重さによりそりを持つ。煩雑な高さ管理が不要であり、この管理工程をなくすことができる。また、パワー半導体チップ１の電極部分にはあらかじめ保護膜６が形成されており、これにより、はんだボールのセルフアライメント効果により、位置合わせの管理が削減できる。
基材（フレキシブル基板）５ａ及び４ｂは、ポリイミドフィルム、もしくは、ポリエステルフィルムを用いるが、特性の面からは前者がよい。また、第１の樹脂回路基板は、ガラス系や紙系にエポキシやフェノールなどの樹脂を組み合わせ、プリプレグと銅箔を積層形成した銅張積層板を使用しても良い。この第１の樹脂回路基板５は、はんだ層を介して第２の樹脂回路基板８へ接続される。
ベアチップ実装エリア３１には、パワー半導体チップ１が、はんだボール２及びはんだ層を介して実装される。パワー半導体チップ１がＩＧＢＴチップと還流ダイオードチップの場合はインバータ回路を、パワー半導体チップ１が整流ダイオードチップの場合は全波整流回路を構成し、併せてベアチップ実装エリアとする。
【０００８】
以上の金属系絶縁基板４の上に形成されたベアチップ実装エリア３１は、第１の樹脂回路基板５により、一括配線される。
さらに、種々の機能をもたせたインテリジェントパワーモジュールでは、第２の樹脂回路基板８を設置する。第２の樹脂回路基板８は、少なくとも一層の銅配線８ｃを有し、基材が、ガラス系や紙系にエポキシやフェノールなどの樹脂を組み合わせ、プリプレグと銅箔を積層形成した銅張積層板を使用することが最も安価な方法である。また、この第２の樹脂回路基板８は、金属系絶縁基板４の上にパワー半導体チップ１を実装した部分は、くりぬかれた構造となる。つまり、ベアチップ実装エリア３１の部分が空間となる。この第２の樹脂回路基板８に、保護回路実装エリア３３、及びドライブ回路実装エリア３４を実装する。この第２の樹脂回路基板８とベアチップ実装エリア３１が形成された金属系絶縁基板４との接続する場合は、第２の樹脂回路基板８のスルーホール１０を介して接続する。具体的には、第２の樹脂回路基板８にあらかじめ形成されたスルーホール１０に対して、対向する金属系絶縁基板４上にピンヘッダ７を実装し、このピンヘッダ７を介して接続する。また、ピンヘッダ７は、バンプとしてもよい。さらに、あらかじめ金属系絶縁基板４と第２の樹脂回路基板８をめっきスルーホールにより接続してもよい。これらの方法では、ピンヘッダ接続かめっきスルーホール接続が有利である。なぜならば、ピンヘッダ接続では、ピンヘッダ分の材料費のみで製作可能となり、めっきスルーホール接続ではあらかじめめっきスルーホールにより第２の樹脂回路基板８と金属系絶縁基板４とを接続したものを準備しておけばよいからである。はんだバンプ接続では、バンプ分の接続スペースが必要なことにより、高さ調整などの製造工程における管理項目が増え、製造工程が複雑化する。
以上述べた回路により、図１０の機能を満足する。また、保護回路実装エリア、ドライブ回路実装エリアは、フレキシブルに変更可能であり、実装位置は特に限定することはない。
【０００９】
（第２の実施形態）
本発明の第２の実施形態を図４に示す。図４は第２の実施形態を示すパワーモジュールの側断面図である。図において、３６は第１の樹脂回路基板５に相当する回路エリアである。第１の実施形態と異なる点は、金属系絶縁基板４のフレキシブル基材４ｂと銅配線４ｃとをアルミベース４ａよりも拡張した点である。　　パワー半導体チップの実装やその他の構成は、第１の実施形態と同様である。
第１の樹脂回路基板５に形成するべき回路配線を、金属系絶縁基板４の基材であるフレキシブル基材と同一平面上に拡張し、第１の樹脂回路基板５に相当する回路エリア３６を、その拡張部に形成した。拡張部をパワー半導体チップ１の実装面方向に折り曲げてパワー半導体チップ１の電極と接続し、パワーモジュールとしたものである。
【００１０】
（第３の実施形態）
本発明の第３の実施形態を図５に示す。図５は第３の実施形態を示すパワーモジュールの側断面図である。図において、３７はアプリケーション回路実装エリア、３８はフレームである。
第２の実施形態と同じ構成であり、拡張部をさらに広げたものである。すなわち、アプリケーション回路実装エリア３７を加え、インバータなどのアプリケーションのパワー回路と一体化設計したときのそれらの部品を実装したものである。
本発明のパワーモジュールをインバータなどのアプリケーションに対して用いる場合、金属系絶縁基板４の基材であるフレキシブル基材４ｂを、同一平面上で拡大し、前記拡張部分を、金属系絶縁基板４の上におかれたフレーム３８に沿って折り曲げた構成とし、アプリケーション回路実装エリアとすることである。
これにより、容易にインバータパワー回路部分との一体化が可能となる。
【００１１】
（第４の実施形態）
本発明の第４の実施形態を図６に示す。図６は、本発明の第４の実施形態を示すパワーモジュールの側断面図である。図において、１１は金属スペーサである。
パワー半導体チップ１の実装およびその他の構成は、第１の実施形態と同様である。　異なる点は、第１の樹脂回路基板５が第２の樹脂回路基板８と直接接続せず、銅ブロックの金属スペーサ１１により接続する部分である。
この構成により、第２の樹脂回路基板８の高さの影響を受けることなく、第１の樹脂回路基板５の高さを決めることができる。
【００１２】
（第５の実施形態）
本発明の第５の実施形態を図７に示す。図７は第５の実施形態を示すパワーモジュールの側断面図である。
パワー半導体チップ１の実装、その他の構成は、第１の実施形態と同様である。異なる点は、第１の樹脂回路基板５と第２の樹脂回路基板８の接続の際に、ピンヘッダ７の金属突起を用いて位置決めすることである。第１の樹脂回路基板５にスルーホール１０を設け、このスルーホール１０にピンヘッダ７を通すことにより位置決めする。これは、第４の実施形態に示した第１の樹脂回路基板５と金属スペーサ１１の位置決めにも使用できる。
これにより、煩雑な位置決め作業は省略できる。
このように、本発明のパワーモジュールは、アルミベース板上のフレキシブル基材に回路を形成した金属系絶縁基板上に複数のパワー半導体チップを実装し、前記パワー半導体チップの電極を有する面の配線は、第１の樹脂回路基板により、一括配線が可能であり、さらに、保護回路やドライブ回路は、第２の樹脂回路基板を設置し、それ上に実装する。第２の樹脂回路基板と、パワー半導体チップが実装された金属系絶縁基板の接続は、ピンヘッダ接続及びめっきスルーホール接続により形成したので、パワーモジュールが小型化、薄型化できるとともに、製造工数の削減が可能である。
また、第１の樹脂回路基板とパワー半導体チップとの接続においては、ピンヘッダなどの金属突起により、煩雑な位置決め作業を省略できる。
なお、本発明のパワーモジュールは、保護回路、ドライブ回路を有さないパワーモジュールにも適用できる。また、本パワーモジュールに、制動用のパワー半導体チップを追加しても良い。
【００１３】
【発明の効果】
以上、述べたように、本発明によればつぎの効果がある。
（１）基板を、パワー半導体チップのベアチップを実装しベアチップ実装エリアを形成した金属系絶縁基板と、パワー半導体チップの電極を接続した第１の樹脂回路基板と、保護回路を形成した保護回路実装エリア、ドライブ回路を形成したドライブ回路実装エリア、外部接続用部品実装エリアを形成した第２の樹脂回路基板とからなり、パワー半導体チップの電極をはんだボールにより接続し、他の基板相互をピンヘッダもしくは、めっきスルーホールにて接続接続する構成にしたので、ワイヤボンディングのループ高さおよびパッドスペースが不要となり、パワーモジュールの薄型化、小型化ができる。さらに、配線インダクタンスを最小にとることができ、パワー半導体チップ周辺の配線を一括配線することにより工数を簡略化できる。
（２）金属系絶縁基板の基材（フレキシブル基板）と銅配線の拡張部を設け、この拡張部に第１の樹脂回路基板に相当する回路エリアを形成し、これを折り曲げてパワー半導体チップの電極と接続し、第１の樹脂回路基板と金属系絶縁基板の基材とを一体化したので、部品の削減による製造工数の簡略化が可能となる。
（３）金属系絶縁基板と第１の樹脂回路基板とを金属スペーサにて接続したので、任意の高さで第１の樹脂回路基板を実装でき、より小型で薄型化ができる。
（４）第１の樹脂回路基板と第２の樹脂回路基板、または、金属スペーサの接続の際にピンヘッダなどの金属突起を介して接続したので、製造工程における実装位置の検査項目を削減できる。
（５）　第１の樹脂回路基板は、基材の材質にポリイミド、または、ポリエステルを用いたので、実装高さ管理などの製造工程上のコストも削減できる。
【図面の簡単な説明】
【図１】本発明の第１の実施形態を示すパワーモジュールの展開斜視図である。
【図２】図１の側断面図である。
【図３】図２のパワー半導体チップ部の拡大図を示す部分断面図である。
【図４】本発明の第２の実施形態を示すパワーモジュールの側断面図である。
【図５】本発明の第３の実施形態を示すパワーモジュールの側断面図である。
【図６】本発明の第４の実施形態を示すパワーモジュールの側断面図である。
【図７】本発明の第５の実施形態を示すパワーモジュールの側断面図である。
【図８】従来のパワーモジュールを示す斜視図である。
【図９】図８の側断面図である。
【図１０】パワーモジュールの機能を示すブロック図である。
【図１１】従来の他のパワーモジュールを示す部分断面図である。
【符号の説明】
１　パワー半導体チップ
２　はんだボール
３　ヒートシンク
４　金属系絶縁基板
４ａ　アルミベース
４ｂ　基材（フレキシブル基板）
４ｃ　銅配線
５　第１の樹脂回路基板
５ａ　基材（フレキシブル基板）
５ｂ　銅配線
６　保護膜
７　ピンヘッダ
８　第２の樹脂回路基板
８ａ　基材（樹脂基板）
８ｂ　銅配線
９　はんだ層
１０　スルーホール
１１　金属スペーサ
１２　セラミック基板
１２ａ　セラミック
１２ｂ　銅配線
１３　ボンディングワイヤ
１４　放熱板（主に銅ベース）
１５　ケース
１６　外部接続用ピンヘッダ
１７　充填樹脂
３１　ベアチップ実装エリア
３３　保護回路実装エリア
３４　ドライブ回路実装エリア
３５　外部接続用部品実装エリア
３６　回路エリア（第１の樹脂回路基板に相当）
３７　アプリケーション回路実装部
３８　フレーム
５１　マイクロエレクトロニクス構成部材
５２　第１の支持体
５３　第１の導体路平面
５４　半導体チップ
５５　第２の支持体
５６　第２の導体路平面[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to the field of power electronics, and more particularly, to a power module and a power semiconductor device having a built-in power semiconductor chip used for a motor drive inverter device and a servo drive device.
[0002]
[Prior art]
In a conventional power module, a plurality of power semiconductor chips are built-in. In particular, the power semiconductor chips are called IGBT modules, which are IGBT chips and freewheeling diode chips, and a rectifying circuit, a gate drive circuit, and a protection circuit are provided in the IGBT module. An intelligent power module that is added and made intelligent is common.
Hereinafter, the intelligent power module will be described.
8 is a perspective view showing a conventional intelligent power module, FIG. 9 is an enlarged sectional view of a power semiconductor chip mounting portion, and FIG. 10 is a functional block diagram of FIG. In the figure, 1 is a power semiconductor chip, 3 is a heat sink, 9 is a solder layer, 12 is a ceramic substrate, 12a is a ceramic substrate, 12b is a copper wiring, 13 is a bonding wire, 14 is a heat sink (mainly a copper base), Reference numeral 15 denotes a case, 16 denotes an external connection pin header, and 17 denotes a filling resin.
Numeral 31 denotes a bare chip mounting area. As shown in FIG. 9, when the power semiconductor chip 1 is an IGBT and a free wheel diode, a leg for three phases is formed by this. Construct a full-wave rectifier bridge. Reference numeral 33 denotes a protection circuit mounting area in which a protection circuit for protecting the power semiconductor chip is mounted, reference numeral 34 denotes a drive circuit mounting area in which a drive circuit for driving the power semiconductor chip is mounted, and reference numeral 35 denotes a case where the drive circuit is used for an application such as an inverter. This is a connection component mounting area for mounting the connection component.
These are configured as shown below.
As shown in FIG. 9, the power semiconductor chip 1 is die-bonded to the heat sink 3 via the solder layer 9. The heat sink 3 is connected via a solder layer 9 or the like to a copper wiring layer 12 a formed on the ceramic substrate 12, and the ceramic substrate 12 is soldered to a heat sink 14.
In the power semiconductor chip 1, the power semiconductor chip may be a switching transistor such as an IGBT chip, a freewheeling diode chip, or a rectifying diode chip. However, as described above, the power semiconductor chip constitutes an inverter circuit or a full-wave rectifying circuit, and includes a bare chip mounting area 31. Implemented in
Further, additional circuits such as a protection circuit mounting area 33, a drive circuit mounting area 34, and an external connection component mounting area 35 on which an external connection pin header is mounted are mounted on the ceramic substrate 12 or a resin substrate. It is wired and configured like a general printed circuit board. Such a circuit satisfies the function of FIG.
The ceramic substrate 12 having such a circuit is covered with a case 15 and the space inside the case is filled with an epoxy-based and silicone-based resin 17 in order to enhance the electrical insulation and heat dissipation effects. Become a module. When this intelligent power module is used in a motor drive inverter device or servo drive device, it is insulated by a ceramic substrate, so that it is directly screwed to a cooling heat sink of the inverter device or servo drive device.
As an operation, as shown in FIG. 10, when the power semiconductor chip is a rectifier diode chip, an alternating current is converted into a direct current, and when the power semiconductor chip is an IGBT chip and a return diode chip, a gate signal or the like is input from an external connection pin header. As a result, the IGBT chip is switched, and an AC voltage having an arbitrary frequency can be obtained at the output terminal.
Various configurations other than the above-described configurations have been proposed (for example, see Patent Document 1).
[0003]
[Patent Document 1]
JP-T-2001-501376 (pages 1-3, FIG. 1)
[0004]
In this power module, as shown in FIG. 11, two supports having a conductor path plane are formed in a sandwich structure, and a large number of semiconductor chips are arranged between the two supports, and the connection between the support and the semiconductor chips is performed. Are connected by microelectronic components. A large number of semiconductor chips 54 are arranged between a first support 52 having a first conductor track plane 53 and a second support 55 having a second conductor track plane 56. The first support is made of a ceramic material and the second support is made of a ceramic material or a flexible support, for example a plastic sheet, especially a polyimide sheet. The semiconductor chip disposed between the first support and the second support is solder-bonded to the first support, and has a fixed connection with the second support, for example, The connection is made using a solder joint, a conductive adhesive, or a conductive ball. There is an example in which this structure is inexpensive, can be easily manufactured, has a high degree of design freedom, and has a low inductance structure.
[0005]
[Problems to be solved by the invention]
However, in the above-described conventional technology, in the power module having the configuration shown in FIG. 9, since circuit wiring is performed using wire bonding, a wire bonding loop height is required, and a pad space for wire bonding is required. Therefore, there has been a problem that the power module cannot be reduced in thickness and size, and furthermore, there is a problem that radiation of electromagnetic noise or malfunction due to electromagnetic noise is caused by wiring inductance caused by a bonding wire. Further, in the manufacturing process by wire bonding, since only one wire can be bonded by one bonding, there is a problem that the number of manufacturing steps increases.
Further, in Patent Document 1, in a sandwich structure including a first support and a second support, conductive balls exemplified above are used for bonding to a semiconductor chip, and particularly, the first support and the second support are used. Since the support 2 uses a support having the same area, there is a problem that management and inspection items in a manufacturing process, such as height control and bridge inspection between electrodes, increase.
Therefore, an object of the present invention is to provide a power module which has a small mounting area even if it is made intelligent by miniaturization, has a wide range of selection of a connection method with an application, has no malfunction due to electromagnetic noise, and has a small number of manufacturing steps. I do.
[0006]
[Means for Solving the Problems]
In order to solve the above problems, the present invention has the following configuration.
(1) In a power module including at least one substrate having a wiring layer provided on a surface thereof, a heat sink provided thereon, and a plurality of power semiconductor chips mounted thereon, the substrate includes the power Forming a metal-based insulating substrate on which a bare chip of a semiconductor chip is mounted to form a bare-chip mounting area, a first resin circuit board to which electrodes of the power semiconductor chip are connected on a side facing the metal-based insulating substrate, and a protection circuit. A protection circuit mounting area, a drive circuit mounting area in which a drive circuit is formed, and a second resin circuit board in which an external connection component mounting area is formed, wherein the second resin circuit board is mounted on the metal-based insulating substrate. Providing a connection between the first resin circuit board and the second resin circuit board, the first resin circuit board and the power semiconductor chip; Electrodes are connected by solder balls, the metal-based insulating substrate and the second resin circuit board are connected by a pin header or a plated through hole, and the first resin circuit board and the second resin circuit board are connected. Are connected via a solder layer.
According to this configuration, the loop height of wire bonding in the power module becomes unnecessary, and a pad space for wire bonding becomes unnecessary, so that the power module can be made thinner and smaller. Further, since wire bonding is not used, wiring inductance can be minimized. Further, in the manufacturing process, the wiring around the power semiconductor chip can be collectively wired, so that the number of manufacturing steps can be simplified. In addition, since only the bare chip mounting area is wired with the first resin circuit board, inspection items such as a bridge inspection between electrodes can be performed relatively easily, and a base material (flexible substrate) is provided on the first resin circuit board. By using this, it is possible to reduce management in the manufacturing process such as mounting height management.
(2) The metal-based insulating substrate includes a substrate (flexible substrate) provided on the surface of an aluminum base and copper wiring, and the material of the substrate is polyimide or polyester. An extended portion extending in the same plane is provided, a circuit area corresponding to the first resin circuit board is formed in the extended portion, and this is bent and connected to an electrode of the power semiconductor chip; The circuit board and the base material of the metal-based insulating substrate are integrated.
According to this configuration, in addition to the first aspect, it is possible to simplify the number of manufacturing steps by reducing the number of components.
(3) The metal-based insulating substrate and the first resin circuit board are connected by a metal spacer.
According to this configuration, in addition to the first to third aspects, the first resin circuit board can be mounted at an arbitrary height, and the size and thickness can be further reduced.
(4) The first resin circuit board is connected to the second resin circuit board or the metal spacer via a metal projection such as a pin header when connecting the metal spacer.
According to this configuration, in addition to the first to fourth aspects, the management items of the mounting position in the manufacturing process can be reduced.
(5) The first resin circuit board includes a base material (flexible board) and copper wiring, and uses polyimide or polyester as a material of the base material.
According to this configuration, by using the base material (flexible substrate), management in the manufacturing process such as mounting height management can also be reduced.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(1st Embodiment)
A first embodiment of the present invention is shown in FIGS. FIG. 1 is an exploded perspective view of the power module, FIG. 2 is a side sectional view of FIG. 1, and FIG. 3 is a partial sectional view showing details of the power semiconductor chip portion of FIG. In the figure, 1 is a power semiconductor chip, 2 is a solder ball, 3 is a heat sink, 4 is a metal-based insulating substrate, 5 is a first resin circuit board, 6 is a protective film, 7 is a pin header, and 8 is a second resin. The circuit board, 9 is a solder layer, and 10 is a through hole.
The metal-based insulating substrate 4 includes an aluminum base 4a, a base (resin substrate) 4b, and copper wiring 4c. The first resin circuit board 5 includes a base 5a (flexible substrate) and copper wiring (5b). The resin circuit board 8 comprises a base material (resin board) 8a and copper wiring 8b.
Numeral 31 denotes a bare chip mounting area. As shown in FIG. 1, when the power semiconductor chip 1 is an IGBT and a free wheel diode, a three-phase leg is formed by this. When the power semiconductor chip 1 is a rectifier diode, this is used. Construct a full-wave rectifier bridge. Reference numeral 33 denotes a protection circuit mounting area in which a protection circuit for protecting the power semiconductor chip is built, reference numeral 34 denotes a drive circuit mounting area in which a drive circuit for driving the power semiconductor chip is built, and reference numeral 35 denotes a case where the protection circuit is used for an application such as an inverter. This is a connection component mounting area for mounting the connection component.
These are configured as shown below.
As shown in FIG. 3, the power semiconductor chip 1 is die-bonded to the heat sink 3 via the solder layer 9 on the surface opposite to the surface having the electrodes. The heat sink 3 is connected to the copper wiring 4 c of the metal-based insulating substrate 4 via the solder layer 9. The power semiconductor chip 1 may be a switching transistor such as an IGBT chip, a freewheeling diode chip, or a rectifying diode chip, but all are connected to the copper wiring 4c with the same configuration. The electrode of the power semiconductor chip 1 is on the surface opposite to the surface to which the heat sink 3 is soldered, and is connected to the first resin circuit board 5 via a micro-connectable connection bump such as a solder ball 2. The bumps are preferably formed on the first resin circuit board rather than being formed on the power semiconductor chip 1 in advance. When the first resin circuit board 5 is a flexible base material during manufacturing, the first resin circuit board 5 has warpage due to the weight of the bumps. No complicated height management is required, and this management step can be eliminated. In addition, a protective film 6 is formed in advance on the electrode portion of the power semiconductor chip 1, so that the self-alignment effect of the solder balls can reduce the alignment control.
As the substrates (flexible substrates) 5a and 4b, a polyimide film or a polyester film is used, but the former is better in terms of characteristics. Further, as the first resin circuit board, a copper-clad laminate in which a prepreg and a copper foil are formed by laminating a resin such as epoxy or phenol with a glass-based or paper-based resin may be used. The first resin circuit board 5 is connected to the second resin circuit board 8 via a solder layer.
The power semiconductor chip 1 is mounted on the bare chip mounting area 31 via the solder ball 2 and the solder layer. When the power semiconductor chip 1 is an IGBT chip and a freewheeling diode chip, an inverter circuit is formed, and when the power semiconductor chip 1 is a rectifier diode chip, a full-wave rectifier circuit is formed.
[0008]
The bare chip mounting area 31 formed on the metal-based insulating substrate 4 described above is collectively wired by the first resin circuit board 5.
Further, in an intelligent power module having various functions, a second resin circuit board 8 is provided. The second resin circuit board 8 has at least one layer of copper wiring 8c, and the base material is a copper-clad laminate formed by laminating a prepreg and a copper foil by combining a resin such as epoxy or phenol with glass or paper. Using is the cheapest method. In the second resin circuit board 8, a portion where the power semiconductor chip 1 is mounted on the metal-based insulating substrate 4 has a hollow structure. That is, the part of the bare chip mounting area 31 becomes a space. The protection circuit mounting area 33 and the drive circuit mounting area 34 are mounted on the second resin circuit board 8. When the second resin circuit board 8 is connected to the metal-based insulating substrate 4 on which the bare chip mounting area 31 is formed, the connection is made through the through-hole 10 of the second resin circuit board 8. Specifically, the pin header 7 is mounted on the metal-based insulating substrate 4 facing the through-hole 10 formed in advance on the second resin circuit board 8 and connected via the pin header 7. Further, the pin header 7 may be a bump. Further, the metal-based insulating substrate 4 and the second resin circuit board 8 may be connected in advance by plating through holes. In these methods, a pin header connection or a plated through hole connection is advantageous. This is because the pin header connection can be manufactured with only the material cost for the pin header, and the plating through hole connection requires that the second resin circuit board 8 and the metal-based insulating substrate 4 are connected in advance by plating through holes. This is because it is sufficient. In the solder bump connection, since a connection space for the bump is required, management items in a manufacturing process such as height adjustment are increased, and the manufacturing process is complicated.
The circuit described above satisfies the function of FIG. Further, the protection circuit mounting area and the drive circuit mounting area can be flexibly changed, and the mounting position is not particularly limited.
[0009]
(Second embodiment)
FIG. 4 shows a second embodiment of the present invention. FIG. 4 is a side sectional view of a power module according to the second embodiment. In the figure, reference numeral 36 denotes a circuit area corresponding to the first resin circuit board 5. The difference from the first embodiment is that the flexible base 4b and the copper wiring 4c of the metal-based insulating substrate 4 are extended more than the aluminum base 4a. The mounting of the power semiconductor chip and other configurations are the same as in the first embodiment.
The circuit wiring to be formed on the first resin circuit board 5 is extended on the same plane as the flexible base material that is the base material of the metal-based insulating board 4, and a circuit area 36 corresponding to the first resin circuit board 5 is formed. , Formed in its extension. The extension is bent in the direction of the mounting surface of the power semiconductor chip 1 and connected to the electrodes of the power semiconductor chip 1 to form a power module.
[0010]
(Third embodiment)
FIG. 5 shows a third embodiment of the present invention. FIG. 5 is a side sectional view of a power module according to the third embodiment. In the figure, 37 is an application circuit mounting area, and 38 is a frame.
The configuration is the same as that of the second embodiment, and the expanded portion is further expanded. That is, the application circuit mounting area 37 is added, and these parts are mounted when they are integratedly designed with the power circuit of the application such as the inverter.
When the power module of the present invention is used for an application such as an inverter, a flexible base material 4b, which is a base material of the metal-based insulating substrate 4, is enlarged on the same plane, and the expanded portion is formed of the metal-based insulating substrate 4. That is, it is configured to be bent along the frame 38 placed on the upper side, and to be an application circuit mounting area.
Thereby, integration with the inverter power circuit portion can be easily performed.
[0011]
(Fourth embodiment)
FIG. 6 shows a fourth embodiment of the present invention. FIG. 6 is a side sectional view of a power module showing a fourth embodiment of the present invention. In the figure, reference numeral 11 denotes a metal spacer.
The mounting and other configurations of the power semiconductor chip 1 are the same as in the first embodiment. The difference is that the first resin circuit board 5 is not directly connected to the second resin circuit board 8 but is connected by the metal spacer 11 of the copper block.
With this configuration, the height of the first resin circuit board 5 can be determined without being affected by the height of the second resin circuit board 8.
[0012]
(Fifth embodiment)
FIG. 7 shows a fifth embodiment of the present invention. FIG. 7 is a side sectional view of a power module according to a fifth embodiment.
The mounting of the power semiconductor chip 1 and other configurations are the same as those of the first embodiment. The difference is that, when the first resin circuit board 5 and the second resin circuit board 8 are connected, the positioning is performed using the metal projections of the pin header 7. The first resin circuit board 5 is provided with a through hole 10 and the pin header 7 is passed through the through hole 10 for positioning. This can also be used for positioning the first resin circuit board 5 and the metal spacer 11 shown in the fourth embodiment.
Thereby, a complicated positioning operation can be omitted.
As described above, the power module of the present invention includes a plurality of power semiconductor chips mounted on a metal-based insulating substrate having a circuit formed on a flexible base material on an aluminum base plate, and wiring on a surface having electrodes of the power semiconductor chip. Can be collectively wired with the first resin circuit board, and the protection circuit and the drive circuit are provided with the second resin circuit board and mounted thereon. The connection between the second resin circuit board and the metal-based insulating substrate on which the power semiconductor chip is mounted is formed by pin header connection and plated through hole connection, so that the power module can be reduced in size and thickness and the number of manufacturing steps can be reduced. Is possible.
In connection between the first resin circuit board and the power semiconductor chip, complicated positioning work can be omitted due to a metal projection such as a pin header.
The power module of the present invention can be applied to a power module having no protection circuit and no drive circuit. Further, a power semiconductor chip for braking may be added to the present power module.
[0013]
【The invention's effect】
As described above, the present invention has the following effects.
(1) A metal-based insulating substrate on which a bare chip of a power semiconductor chip is mounted and a bare chip mounting area is formed, a first resin circuit board on which electrodes of the power semiconductor chip are connected, and a protection circuit mounting on which a protection circuit is formed Area, a drive circuit mounting area in which a drive circuit is formed, and a second resin circuit board in which an external connection component mounting area is formed. The electrodes of the power semiconductor chip are connected by solder balls, and the other boards are connected to each other by a pin header or Since the connection is made by plating through holes, the loop height and pad space for wire bonding are not required, and the power module can be made thinner and smaller. Furthermore, the wiring inductance can be minimized, and the man-hour can be simplified by wiring the wiring around the power semiconductor chip collectively.
(2) A base material (flexible substrate) of a metal-based insulating substrate and an extended portion of copper wiring are provided, a circuit area corresponding to the first resin circuit board is formed in the extended portion, and this is bent to form a power semiconductor chip. Since the first resin circuit board is connected to the electrodes and the base material of the metal-based insulating substrate is integrated, the number of parts can be reduced, and the number of manufacturing steps can be simplified.
(3) Since the metal-based insulating substrate and the first resin circuit board are connected by the metal spacers, the first resin circuit board can be mounted at an arbitrary height, and can be made smaller and thinner.
(4) Since the first resin circuit board and the second resin circuit board, or the metal spacers are connected via metal protrusions such as pin headers, the number of inspection items of the mounting position in the manufacturing process can be reduced.
(5) Since the first resin circuit board uses polyimide or polyester as the material of the base material, it is possible to reduce costs in the manufacturing process such as mounting height control.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view of a power module according to a first embodiment of the present invention.
FIG. 2 is a side sectional view of FIG.
FIG. 3 is a partial cross-sectional view showing an enlarged view of a power semiconductor chip part of FIG. 2;
FIG. 4 is a side sectional view of a power module according to a second embodiment of the present invention.
FIG. 5 is a side sectional view of a power module according to a third embodiment of the present invention.
FIG. 6 is a side sectional view of a power module showing a fourth embodiment of the present invention.
FIG. 7 is a side sectional view of a power module showing a fifth embodiment of the present invention.
FIG. 8 is a perspective view showing a conventional power module.
FIG. 9 is a side sectional view of FIG. 8;
FIG. 10 is a block diagram illustrating functions of a power module.
FIG. 11 is a partial sectional view showing another conventional power module.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Power semiconductor chip 2 Solder ball 3 Heat sink 4 Metallic insulating substrate 4a Aluminum base 4b Base material (flexible substrate)
4c Copper wiring 5 First resin circuit board 5a Base material (flexible board)
5b Copper wiring 6 Protective film 7 Pin header 8 Second resin circuit board 8a Base material (resin substrate)
8b Copper wiring 9 Solder layer 10 Through hole 11 Metal spacer 12 Ceramic substrate 12a Ceramic 12b Copper wiring 13 Bonding wire 14 Heat sink (mainly copper base)
15 Case 16 Pin header 17 for external connection 17 Filled resin 31 Bare chip mounting area 33 Protection circuit mounting area 34 Drive circuit mounting area 35 External component mounting area 36 Circuit area (corresponding to first resin circuit board)
37 application circuit mounting part 38 frame 51 microelectronic component 52 first support 53 first conductor path plane 54 semiconductor chip 55 second support 56 second conductor path plane

Claims (5)

表面に配線層を設けた少なくとも１枚の基板と、その上に設けたヒートシンクと、さらにその上に実装された複数のパワー半導体チップとを有するパワーモジュールにおいて、
前記基板は、前記パワー半導体チップのベアチップが実装されベアチップ実装エリアを形成する金属系絶縁基板と、前記金属系絶縁基板と対向する側に前記パワー半導体チップの電極を接続した第１の樹脂回路基板と、保護回路を形成した保護回路実装エリアとドライブ回路を形成したドライブ回路実装エリアおよび外部接続用部品実装エリアを形成した第２の樹脂回路基板とからなり、前記第２の樹脂回路基板を前記金属系絶縁基板上に設け前記第１の樹脂回路基板と前記第２の樹脂回路基板とを接続し、前記第１の樹脂回路基板と前記パワー半導体チップの電極とを、はんだボールにより接続し、前記金属系絶縁基板と前記第２の樹脂回路基板はピンヘッダもしくは、めっきスルーホールにて接続し、前記第１の樹脂回路基板と前記第２の樹脂回路基板とを、はんだ層を介して接続したことを特徴とするパワーモジュール。A power module including at least one substrate provided with a wiring layer on a surface thereof, a heat sink provided thereon, and a plurality of power semiconductor chips mounted thereon.
The substrate is a first resin circuit board in which a bare chip of the power semiconductor chip is mounted to form a bare chip mounting area and an electrode of the power semiconductor chip is connected to a side facing the metal based insulating substrate. And a second resin circuit board in which a protection circuit mounting area in which a protection circuit is formed, a drive circuit mounting area in which a drive circuit is formed, and a component mounting area for external connection are formed. A first resin circuit board provided on a metal-based insulating substrate, the second resin circuit board being connected to the first resin circuit board, and an electrode of the power semiconductor chip being connected by a solder ball; The metal-based insulating substrate and the second resin circuit board are connected by a pin header or a plated through hole, and the first resin circuit board and the second resin circuit board are connected to each other. Power module, characterized in that the resin circuit board, connected through a solder layer. 前記金属系絶縁基板は、アルミベースの表面に設けた基材（フレキシブル基板）と銅配線からなり、前記基材の材質をポリイミド、または、ポリエステルとし、前記基材と前記銅配線を同一平面内で拡張した拡張部を設け、前記第１の樹脂回路基板に相当する回路エリアを前記拡張部に形成し、これを折り曲げて前記パワー半導体チップの電極と接続し、前記第１の樹脂回路基板と、前記金属系絶縁基板の基材とを一体化したことを特徴とする請求項１記載のパワーモジュール。The metal-based insulating substrate is composed of a substrate (flexible substrate) provided on the surface of an aluminum base and copper wiring. The material of the substrate is polyimide or polyester, and the substrate and the copper wiring are in the same plane. Forming an expanded portion, and forming a circuit area corresponding to the first resin circuit board in the expanded portion, and bending and connecting the circuit area to the electrode of the power semiconductor chip; 2. The power module according to claim 1, wherein a base material of the metal-based insulating substrate is integrated. 前記金属系絶縁基板と前記第１の樹脂回路基板とを金属スペーサにて接続したことを特徴とする請求項１または２記載のパワーモジュール。The power module according to claim 1, wherein the metal-based insulating substrate and the first resin circuit board are connected by a metal spacer. 前記第１の樹脂回路基板と前記第２の樹脂回路基板、または、前記金属スペーサの接続の際にピンヘッダなどの金属突起を介して接続することを特徴とする請求項１から３のいずれか１項に記載のパワーモジュール。4. The connection between the first resin circuit board and the second resin circuit board or a metal protrusion such as a pin header when connecting the metal spacer. The power module according to the item. 前記第１の樹脂回路基板は、基材（フレキシブル基板）と銅配線からなり、前記フレキシブル基材の材質にポリイミド、または、ポリエステルを用いたことを特徴とする請求項１から４記載のいずれか１項に記載のパワーモジュール。The said 1st resin circuit board consists of a base material (flexible board) and copper wiring, The polyimide or polyester was used for the material of the said flexible base material, The Claim 1 characterized by the above-mentioned. 2. The power module according to claim 1.
JP2002271502A 2002-09-18 2002-09-18 Power module Expired - Fee Related JP3994381B2 (en)

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US7612448B2 (en) 2004-12-13 2009-11-03 Daikin Industries, Ltd. Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner
US7872337B2 (en) 2005-04-28 2011-01-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a flexible board for connection to a semiconductor chip mounted on an insulating substrate
JP2012243905A (en) * 2011-05-18 2012-12-10 Shindengen Electric Mfg Co Ltd Power module and manufacturing method of the same
JP2015198171A (en) * 2014-04-01 2015-11-09 富士電機株式会社 power semiconductor module
JP2020184574A (en) * 2019-05-08 2020-11-12 三菱電機株式会社 Power semiconductor devices and their manufacturing methods
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612448B2 (en) 2004-12-13 2009-11-03 Daikin Industries, Ltd. Power module having a cooling device and semiconductor devices mounted on a resin substrate, method of producing same, and air conditioner
US7872337B2 (en) 2005-04-28 2011-01-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a flexible board for connection to a semiconductor chip mounted on an insulating substrate
JP2012243905A (en) * 2011-05-18 2012-12-10 Shindengen Electric Mfg Co Ltd Power module and manufacturing method of the same
JP2015198171A (en) * 2014-04-01 2015-11-09 富士電機株式会社 power semiconductor module
US20220181948A1 (en) * 2019-04-18 2022-06-09 Mitsubishi Heavy Industries Thermal Systems, Ltd. Vehicle-mounted electric compressor
US12015330B2 (en) * 2019-04-18 2024-06-18 Mitsubishi Heavy Industries Thermal Systems, Ltd. Vehicle-mounted electric compressor
JP2020184574A (en) * 2019-05-08 2020-11-12 三菱電機株式会社 Power semiconductor devices and their manufacturing methods
JP7069082B2 (en) 2019-05-08 2022-05-17 三菱電機株式会社 Power semiconductor devices and their manufacturing methods

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