JP2004104089A - Method for manufacturing nitride semiconductor using hyperpure ammonia - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor using hyperpure ammonia suitable for the nitrogen source for the nitride semiconductor. <P>SOLUTION: The nitride semiconductor is manufactured with the hyperpure ammonia as a raw material obtained through distillation by decreasing the impurity having a peak absorption wavelength of 1310 cm<SP>-1</SP>, 1320 cm<SP>-1</SP>, and 1330 cm<SP>-1</SP>determined by the gas analysis which uses Fourier transformation infrared spectroscopy (FT-IR). <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing a nitride semiconductor using high-purity ammonia as a nitrogen source, and more specifically, an impurity whose peak is observed at a specific absorption wavelength in gas analysis by Fourier transform infrared spectroscopy is a predetermined impurity. The present invention relates to a method for producing a nitride semiconductor using high-purity ammonia reduced to a value equal to or less than a value as a nitrogen source.
[0002]
[Prior art]
At present, ammonia is mainly used as a nitrogen source when manufacturing a nitride semiconductor, and its manufacturing method is an MOCVD method, an MBE method, or the like. Blue LEDs, lasers, and the like utilizing gallium nitride, which is one of the nitride semiconductors manufactured using these methods, have been put to practical use.
[0003]
However, at present, the performance of the nitride semiconductor is greatly influenced by the purity of ammonia as a raw material. At present, ammonia used in the production of nitride semiconductors is used after being purified to a high degree by removing impurities such as oxygen, moisture, and carbon dioxide from industrial ammonia having a purity of usually 99.9% or more. . As a method for this high purification, there are methods disclosed in JP-A-2002-37623, JP-A-2002-37624, and the like. In fact, the performance of nitride semiconductors manufactured by using them is inferior to those of other compound semiconductors.
[0004]
[Patent Document 1]
JP-A-2002-37623 (Publication pages 3 and 4; FIG. 1)
[Patent Document 2]
JP-A-2002-37624 (publication page 4-8, FIG. 1)
[0005]
[Problems to be solved by the invention]
Under such circumstances, the highly purified ammonia currently used when manufacturing a nitride semiconductor contains impurities other than impurities such as oxygen, moisture, and carbon dioxide, which are not removed. It is presumed that the performance of the nitride semiconductor manufactured by using is lowered. Therefore, the present invention finds impurities in ammonia, which affect the performance of the nitride semiconductor, in impurities other than oxygen, moisture, and oxygen dioxide, and uses high-purity ammonia in which the impurities are reduced. The task is to improve performance.
[0006]
[Means for Solving the Problems]
To achieve the above object, in the present invention, ^1310Cm -1, to reduce impurities having a peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 in the gas analysis Fourier transform infrared spectroscopy (FT-IR) Thus, a nitride semiconductor is manufactured using highly purified ammonia as a nitrogen source. Thereby, the performance of the nitride semiconductor can be improved. This is based on a very important finding obtained as follows.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
The inventor of the present invention prepared two types of ammonia (ammonia-A and ammonia-B), both of which were highly purified with respect to moisture, oxygen, and carbon dioxide, and used these as a nitrogen source to form nitride semiconductors. Was manufactured and the performance test of these semiconductors was carried out. As a result, the semiconductor using ammonia-A was inferior in performance to the semiconductor using ammonia-B.
[0008]
Therefore, it was estimated that the difference in performance was caused by the used ammonia, and gas analysis was performed on ammonia-A and ammonia-B by FT-IR. The result is shown in FIG. As apparent from the figure, the ammonia over A used in the manufacture of a nitride semiconductor performance was inferior, than ammonia ^-B, having a peak absorption wavelength of 1310cm ^-1, 1320cm -1 and 1330 cm ^-1 More impurities were observed. In gas analysis by FT-IR, no peak was observed at absorption wavelengths specific to water and carbon dioxide (water: 3740, 3744, 3760 cm ^−1, etc., carbon dioxide: 2200, 2370, 2500 cm ^−1, etc.). . Furthermore, when these ammonia were subjected to gas analysis by a gas chromatograph atmospheric pressure ionization mass spectrometer (GC-APIMS) for measurement of oxygen components, no oxygen components were observed (0.01 ppm or less). Accordingly, the foregoing ^1310Cm -1, these impurities having a peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 that has been speculated that affect the performance of the nitride semiconductor.
[0009]
Next, lasers were produced using the same ammonia-A and ammonia-B, respectively, and their performance was evaluated. FIG. 2 shows the results as performance test results. As is clear from the figure, the laser produced using ammonia-A has inferior performance to the laser produced using ammonia-B. From this result, it is considered that still ^1310Cm -1, impurities having a peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 is affecting the performance of the nitride semiconductor laser.
[0010]
Next, in order to further clarify the above points, the above-mentioned impurities were reduced from ammonia-B by performing a distillation (rectification) operation under the following operating conditions using the apparatus shown in FIG. Ammonia (ammonia-C) was prepared. That is, the distillation column in the figure is a Raschig packed column, the height of the distillation column is about 1500 mm, the diameter of the distillation column is about 55 mm, and the operating conditions are a distillation column pressure of about 0.4 MPa and a reflux ratio of about 15 or more. . The distillation apparatus as shown in the figure using a Raschig-packed packed column is known, and its operation is also known, so that detailed description thereof will be omitted. Similarly, a nitride semiconductor laser was manufactured using the ammonia rectified in this way, and a performance test was performed with a laser using ammonia-B. The result is shown in FIG. As is clear from FIG. 4, the laser using ammonia-C has better performance than the laser using ammonia-B. The results of FT-IR analysis of ammonia-B and ammonia-C used here are shown in FIG. From these, ^1310Cm by gas analysis FT-IR -1, it can be seen that the improved 1320 cm ^-1 as well as the nitride semiconductor performance is less impurities having a peak absorption wavelength of 1330 cm ^-1 is. In the gas analysis by FT-IR, peaks are observed at absorption wavelengths specific to water and carbon dioxide (water: 3740, 3744, 3760 cm ^−1, etc., carbon dioxide: 2200, 2370, 2500 cm ^−1, etc.). Did not. Furthermore, when these ammonia were subjected to gas analysis by a gas chromatograph atmospheric pressure ionization mass spectrometer (GC-APIMS) for measurement of oxygen components, no oxygen components were observed (0.01 ppm or less).
[0011]
Needless to say, similar results were obtained also in the nitride semiconductor light emitting diode. Incidentally, FIG. 6 shows the results of FT-IR analysis of ammonia obtained by distillation at reflux ratios of 9, 15, and 30 using the apparatus shown in FIG. As can be seen, in the case of the reflux ratio 9, there is not much difference from the ammonia A described above. It can be seen that the cases of the reflux ratios 15 and 30 correspond to ammonia-B and ammonia-C. Therefore, it can be seen that the reflux ratio is desirably 15 or more in order to obtain high-purity ammonia suitable for use as a nitrogen source for producing a nitride semiconductor having excellent performance. ^{Incidentally,} 1310cm -1 by gas analysis with FT-IR in the case of ammonia -B, peak height of the absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1, the methane 10ppm standard gas having an absorption wavelength in the vicinity of 1306cm ^-1 The height is almost the same as the peak height. The peak heights of the absorption wavelengths at 1310 cm ⁻¹ , 1320 cm ^−1, and 1330 cm ⁻¹ obtained by gas analysis using FT-IR for ammonia-C are the peak heights of the methane 5 ppm standard gas having an absorption wavelength near 1306 cm ^−1. It is about the same height. ^That, 1310cm -1 in ammonia gas, when 1320 cm ^-1 and peak height of impurities having an absorption wavelength in 1330 cm ^-1 is lower than the same or the peak height of the methane 10ppm standard gas having an absorption wavelength in 1306Cm ^-1 In other words, it can be seen that when the concentration of the impurity is less than or equal to 10 ppm of methane, the performance of the nitride semiconductor manufactured using the ammonia as a nitrogen source is remarkably improved as compared with the conventional case. . In the case of ammonia-C, the concentration is equivalent to 5 ppm of methane.
[0012]
Next, specific embodiments of a method for manufacturing various nitride semiconductors will be described. First, a first embodiment will be described with reference to FIG.
[0013]
The nitride semiconductor laser device shown in FIG. 7 has a (0001) plane n-type GaN substrate 100, an n-type GaN layer 101, an n-type AlGaN cladding layer 102, an n-type GaN optical guide layer 103, a light-emitting layer 104, and a p-type AlGaN carrier. It comprises a block layer 105, a p-type GaN light guide layer 106, a p-type AlGaN cladding layer 107, a p-type GaN contact layer 108, an n-electrode 109, a p-electrode 110, and a SiO ₂ dielectric film 111.
[0014]
First, an element structure is sequentially stacked on an n-type GaN substrate 100 using a metal organic chemical vapor deposition (MOCVD) apparatus. The ammonia-C according to the present invention is used as a group V source, TMG (trimethylgallium) or TEG (triethylgallium) is used as a group III source, SiH ₄ is used as an n-type impurity, and the n-type GaN layer 101 is formed at 1050 ° C. An underlayer is formed to 1 μm. The n-type GaN layer is for improving the surface morphology of the n-type GaN substrate and relaxing stress strain remaining on the GaN substrate surface due to polishing to form the outermost surface suitable for epitaxial growth.
[0015]
Next, TMA (trimethylaluminum) or TEA (triethylaluminum) is added as a group III raw material to grow a 1.2 μm thick n-type AlGaN cladding layer 102 (Si impurity concentration 1 × 10 ¹⁸ / cm ³ ), Subsequently, an n-type GaN optical guide layer 103 (Si impurity concentration 1 × 10 ¹⁸ / cm ³ ) is grown to a thickness of 0.1 μm. Here, the Al composition ratio of the n-type AlGaN cladding layer 102 was set to 0.07. Thereafter, the substrate temperature was stabilized at 800 ° C., and a 4 nm-thick Si-doped GaN barrier layer (Si impurity concentration was 1 × 10 ¹⁸ / cm ³ ), a 4 nm-thick undoped IN _0.15 Ga _{0. The} light emitting layer 104 is formed by alternately stacking three periods of multiple quantum well active layers, each of which includes one ₈₅ N well layer.
[0016]
Next, the substrate temperature is stabilized at 1050 ° C., a p-type AlGaN carrier blocking layer 105 having a thickness of 20 nm, a p-type GaN optical guide layer 106 having a thickness of 0.1 μm, and a p-type AlGaN cladding layer 107 having a thickness of 0.5 μm. Then, a p-type GaN contact layer 108 having a thickness of 0.1 μm is sequentially grown. Here, the Al composition of the p-type AlGaN carrier block layer 105 was 0.3, and the Al composition of the p-type AlGaN cladding layer 107 was 0.1. In addition, Mg (EtCP ₂ Mg: bisethylcyclopentadienyl magnesium) can be used as the p-type impurity.
[0017]
Subsequently, the grown wafer is taken out from the MOCVD apparatus, and electrodes are formed. The n-electrode 109 was formed on the back surface of the wafer in the order of Hf / Al, and Au was deposited on the n-electrode 109 as an n-type electrode pad. Alternatively, Ti / Al, Ti / Mo, Hf / Au, or the like can be used as the n-electrode material.
[0018]
The p-electrode is etched in a stripe shape to form a ridge stripe structure. The width of the ridge stripe was 1.7 μm. Thereafter, a SiO ₂ dielectric film 111 is deposited to a thickness of 200 nm, processed to expose the p-type GaN contact layer 108, and Pd (15 nm) / Mo (15 nm) / Au (200 nm) is sequentially deposited as a p-electrode 110. The device is completed.
[0019]
The light-emitting layer 104 described above starts with a barrier layer and ends with a barrier layer, but may have a structure that starts with a well layer and ends with a well layer. In addition, the threshold current density of the well layer was not limited to three, but could be kept low if the period was ten or less, and continuous oscillation at room temperature was possible.
[0020]
According to the knowledge of the inventors, an undoped InGaN layer or an undoped layer having a thickness of 7 nm or more and 35 nm is provided between the barrier layer, which is the outermost layer on the p-type nitride semiconductor layer side of the light-emitting layer 104, and the p-type AlGaN carrier block layer 105. It is preferable to insert a GaN layer, an undoped AlGaN layer, a Si-doped GaN layer, or a Si-doped AlGaN layer, since the threshold current density is further reduced. The present inventors have proposed a model in which the crystallinity is reduced due to the high Al composition ratio of the p-type AlGaN carrier block layer, crystal defects such as dislocations are generated, and Mg enters the light emitting layer by spike diffusion via the defects. Are thinking. According to this model, by inserting any of the above layers, it is possible to prevent Mg from entering the light emitting layer due to spike diffusion from the p-type layer. Further, by inserting these layers, the position of the pn junction can be fixed, so that the production yield can be improved. Note that the Al composition of the p-type AlGaN carrier block layer 105 may be other than 0.3.
[0021]
For comparison, a device using conventional ammonia as a group V raw material was manufactured using the above-described manufacturing method, and the EL light emission intensity in the LED mode together with the nitride semiconductor laser device of the present invention was measured at an injection current density of 0.67 kA / The measurement was performed under the condition of cm ² . It has been found that the EL emission intensity of the laser element using ammonia-C of the present invention is stronger than that using conventional ammonia. Comparing the intensity in arbitrary units, the device of the present invention showed an intensity of 22.3, while the device of the conventional example had an emission intensity of 13.6. It can be seen that the emission intensity of the device of the present invention is improved 1.6 times as compared with the conventional device. Since this measurement result has the same injection current density, it is considered that the luminous efficiency of each active layer is directly reflected, and it is shown that the luminous efficiency of the active layer is improved by ammonia-C of the present invention. I have.
[0022]
Next, when the light-emitting layer 104 of the element manufactured using ammonia-C and conventional ammonia in this embodiment was analyzed by SIMS (secondary ion mass spectrometry), the light emission of the element manufactured using ammonia-C was measured. The layer 104 has a significantly lower detection amount of heavy metal elements, which are usually considered to be derived from ammonia, in addition to C and O, and the impurity is reduced by growing an active layer using ammonia-C, as compared with a conventional element using ammonia. obtain. Further, the same tendency was observed for the p-type AlGaN carrier block layer 105, the p-type GaN optical guide layer 106, the p-type AlGaN cladding layer 107, and the p-type GaN contact layer 108. Further, the voltage of each device was measured under the conditions of an injection current density of 0.67 kA / cm ² , which was 3.3 V for the device using ammonia-C of the present invention. The device used showed a high voltage of 3.9 V. Since the element structures are the same, it is considered that a difference in voltage is caused by a difference in ammonia used as a group V raw material. Normally, the resistance of the nitride semiconductor is larger in the p-type than in the n-type, and the voltage drop of the n-type layer in the element structure is sufficiently smaller than that of the p-type layer. Reflecting the voltage drop in the mold layer, the use of ammonia-C of the present invention improves the activation rate of Mg, which is the dopant of the p-type layer, and lowers the resistance. As a result, the voltage of the element decreases. It is thought that it was done.
[0023]
Here, addition of As or P to the nitride semiconductor laser device structure will be described.
[0024]
When As is added as a crystal composition to the nitride semiconductor laser device structure of the present application, AsH ₃ (arsine) or TBAs (tertiary butyl arsine) is used, and when P is added similarly, PH ₃ (phosphine) or TBP (tersine) is used. Libutylphosphine) can be used. In addition, dimethylhydrazine can be used as an N source of the nitride semiconductor in addition to ammonia.
[0025]
The composition of As or P added to the nitride semiconductor laser device structure of the present invention is such that the sum of the element groups constituting the target nitride semiconductor layer is X, and the N contained in a certain nitride semiconductor layer is the same. When the composition ratio of the elements is Y, X is smaller than Y, and X / (X + Y) is 0.3 (30%) or less, particularly preferably 0.15 (15%) or less. The lower limit of the total sum of the element groups is 1 × 10 ¹⁸ / cm ³ or more. If the composition ratio X of the total of the element groups is higher than 15%, the possibility that phase separation in which the composition ratio of the element differs in each specific region in the nitride semiconductor layer increases, which is not preferable. Further, when the composition ratio X of the total of the group of elements is higher than 30%, the above-described phase separation tends to shift to a crystal system separation in which a hexagonal system and a cubic system coexist, which causes a decrease in crystallinity. On the other hand, when the addition amount of the total of the element group is smaller than 1 × 10 ¹⁸ / cm ³ , for example, it is difficult to obtain the effect obtained by including the element group in the light emitting layer described below.
[0026]
When at least one of the element groups of As and P is added to the light emitting layer of the nitride semiconductor laser device of the present invention, the effective mass of electrons and holes in the light emitting layer is reduced, and the electrons and holes are reduced. Mobility can be increased. The former means that a carrier inversion distribution for laser oscillation can be obtained with a small amount of current injection, and the latter means that even if electrons and holes disappear in the light-emitting layer due to radiative recombination, new electrons and holes are diffused faster by diffusion. Means to be injected. That is, as compared with an InGaN-based nitride semiconductor laser device in which the light emitting layer does not contain any of the elements of As and P, a semiconductor having a lower threshold current density and excellent self-excited oscillation characteristics (excellent noise characteristics) A laser element can be manufactured.
[0027]
At least one of the elements of As and P can be used for layers other than the light emitting layer, for example, the light guide layer, the clad layer, the contact layer, and the crack prevention layer. For example, a crack preventing layer can be inserted between the n-type GaN layer 101 and the n-type AlGaN cladding layer 102. As the crack preventing layer, GaNP, GaNAs, GaNP / GaN superlattice and GaNAs / GaN superlattice can be used. By inserting these layers, it is possible to prevent cracks generated in the clad layer mainly composed of AlGaN.
[0028]
Next, a second embodiment will be described. The nitride semiconductor laser device shown in FIG. 7 was manufactured in the same manner as in the first embodiment, using an (11-20) plane (M plane) n-type GaN substrate 101. However, the ammonia-C of the present invention was used as a group V raw material. The n-type GaN light guide layer and the p-type GaN light guide layer may have As or P added as a crystal composition to the layers. The Al compositions of the n-type AlGaN cladding layer and the p-type AlGaN cladding layer may be other than the values shown in the first embodiment, or a GaN / AlGaN superlattice may be used. In addition, As or P may be added as a composition.
[0029]
When the EL emission intensity of this element in the LED mode was measured under the conditions of an injection current density of 0.67 kA / cm ² , the intensity was 22.3 in arbitrary units. As in the first embodiment, it can be seen that the device of the present invention has a 1.6 times higher light emission intensity than the device using conventional ammonia. This measurement result indicates that the effects of the ammonia-C of the present invention can be obtained even with a GaN substrate other than the C-plane.
[0030]
Next, a third embodiment will be described. The nitride semiconductor laser device shown in FIG. 1 was manufactured using a C-plane GaN substrate 101 in the same manner as in the first embodiment. However, the surface of the substrate had a slight inclination angle of 0.5 ° toward the <1-100> direction. The ammonia-C of the present invention was used as a group V raw material. The n-type GaN light guide layer and the p-type GaN light guide layer may have As or P added as a crystal composition to the layers. The Al compositions of the n-type AlGaN cladding layer and the p-type AlGaN cladding layer may be other than the values shown in the first embodiment, or a GaN / AlGaN superlattice may be used. In addition, As or P may be added as a composition.
[0031]
When the EL emission intensity of this device in the LED mode was measured under the conditions of an injection current density of 0.67 kA / cm ² , the intensity was 25 in an arbitrary unit. It can be seen that the device of the present invention has 1.8 times the emission intensity as compared with the device using conventional ammonia.
[0032]
In the surface of the substrate used in this embodiment and having a slight inclination on the surface, uniform steps occur on the order of the atomic layer due to the inclination angle. FIG. 8 schematically shows the state. The step 202 of the substrate 201 having a small inclination angle on the surface is further improved by preferentially adsorbing the group III source species that has reached the substrate surface from the gas phase in the course of the epitaxial growth to form the growth nuclei 203 uniformly. It is considered that there is an effect of promoting two-dimensional growth in which layers are stacked one by one. However, for example, when impurities derived from a raw material are present in the gas phase, the impurities may aggregate at the step portion, which may rather deteriorate the element characteristics. On the other hand, in the ammonia-C according to the present invention, impurities that deteriorate the characteristics of the light emitting layer are reduced, so that the aggregation of impurities is unlikely to occur as in the case of conventional ammonia, and the substrate having a small inclination angle on the surface is satisfactory. It is considered that two-dimensional growth is realized, and as a result, a light emitting layer having a very flat and good light emitting efficiency is realized.
[0033]
According to the findings of the inventors, the most preferable result was obtained when the inclination angle of the substrate surface was in the range of ± 0.1 to 0.7 °. If the inclination angle is in the range of ± 0.1 to 0.7 °, the light emission intensity of about 25 in arbitrary units is obtained regardless of whether the inclination direction is the <1-100> direction or the <11-20> direction. Can be realized. When the tilt angle is in the range of ± 0.1 to 0.7 °, the surface step in microscopic view is the most suitable state for two-dimensional growth. Since the interval becomes shorter, the transition from two-dimensional growth to three-dimensional island-like growth starts, and irregularities occur on the growth layer surface. Since the irregularities propagate to the light emitting layer, the spatial composition of In becomes uneven and the emission wavelength distribution broadens and the light emission intensity decreases due to absorption. As a result, the device characteristics are adversely affected. Conversely, if the inclination is less than ± 0.1 °, the interval between steps becomes longer, and the substrate is more susceptible to crystal defects existing in the substrate. Since the crystal defect is inherited by the growth layer, the crystal defect becomes a non-emission center in the light emitting layer, which is a factor of deteriorating device characteristics.
[0034]
Next, a fourth embodiment will be described. The nitride semiconductor laser device shown in FIG. 1 was manufactured using the ZrB ₂ substrate 101 in the same manner as in the first embodiment. A similar element was manufactured using a substrate 101 having a spinel structure made of Mg, Al, and O. However, the ammonia-C of the present invention was used as a group V raw material. The n-type GaN light guide layer and the p-type GaN light guide layer may have As or P added as a crystal composition to the layers. The Al compositions of the n-type AlGaN cladding layer and the p-type AlGaN cladding layer may be other than the values shown in the first embodiment, or a GaN / AlGaN superlattice may be used. In addition, As or P may be added as a composition.
[0035]
When the EL emission intensity of these devices in the LED mode was measured under the conditions of an injection current density of 0.67 kA / cm ² , both exhibited an intensity of 22 in arbitrary units. As in the first embodiment, it can be seen that the device of the present invention has a 1.6 times higher light emission intensity than the device using conventional ammonia. This measurement result indicates that the effect of ammonia-C of the present invention can be obtained even in a device formed by heteroepitaxial growth using a substrate other than GaN, similarly to a device formed by homo-growth.
[0036]
【The invention's effect】
As described above, in the present invention, the oxygen has been conventionally used, moisture, further high purity ammonia, etc. to remove carbon ^dioxide, 1310cm -1, which is determined by analysis with FT-IR, 1320 cm ^-1 In addition, since highly purified ammonia is used as a nitrogen source by reducing impurities having a peak at an absorption wavelength of 1330 cm ⁻¹ , a nitride semiconductor with much improved performance compared to the conventional one can be obtained.
[Brief description of the drawings]
FIG. 1 is a graph showing the results of FT-IR analysis of two types of ammonia, ammonia-A and ammonia-B, used as a nitrogen source when manufacturing a nitride semiconductor.
FIG. 2 is a graph showing performance test results of lasers manufactured using respective ammonias.
FIG. 3 is a configuration diagram of a distillation apparatus for obtaining ammonia used in the present invention.
FIG. 4 is a graph showing a performance test result of a laser manufactured using ammonia-B and ammonia-C in which impurities are reduced more than ammonia-B.
FIG. 5 is a graph showing the results of FT-IR analysis of ammonia-B and ammonia-C.
FIG. 6 is a graph showing a change in impurities according to a change in a reflux ratio.
FIG. 7 is a schematic view showing an example of a nitride semiconductor laser device.
FIG. 8 is a schematic diagram showing a surface of a substrate having a slight inclination on its surface and a state of crystal growth.

Claims (8)

^1310cm -1 by gas analysis Fourier transform infrared spectroscopy, that the peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 was used a high-purity ammonia with reduced impurities observed below a predetermined value as a nitrogen source A method for producing a nitride semiconductor. What is claimed is: 1. A nitride semiconductor laser device comprising a plurality of nitride semiconductor layers, comprising: an active layer having a quantum well structure formed by at least one or more well layers and barrier layers; using ^1310Cm -1, a high-purity ammonia peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 was reduced impurity observed below a predetermined value as a nitrogen source in the analysis by reducing the impurity concentration, the quantum well A method for manufacturing a nitride semiconductor light emitting device, comprising: improving the luminous efficiency of an active layer and reducing light absorption due to impurity order. What is claimed is: 1. A nitride semiconductor laser device comprising a plurality of nitride semiconductor layers, comprising: an active layer having a quantum well structure formed by at least one or more well layers and barrier layers; By using, as a nitrogen source, high-purity ammonia in which impurities whose peaks are observed at absorption wavelengths of 1310 cm ⁻¹ , 1320 cm ^−1, and 1330 cm ⁻¹ are reduced to a predetermined value or less as a nitrogen source and mainly reducing p concentration, A method for manufacturing a nitride semiconductor light emitting device, characterized in that the resistance of a nitride semiconductor layer is reduced. A nitride semiconductor laser device using a nitride semiconductor substrate and comprising a plurality of nitride semiconductor layers, comprising: an active layer having a quantum well structure formed by at least one or more well layers and a barrier layer; and characterized by using ^1310Cm -1 gas analysis by transform infrared spectroscopy, a high-purity ammonia peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 was reduced impurity observed below a predetermined value as a nitrogen source Of manufacturing a nitride semiconductor light emitting device. The method for manufacturing a nitride semiconductor light emitting device according to claim 4, wherein the plane orientation of the nitride semiconductor substrate is a C plane or an M plane. The nitride semiconductor light emitting device according to claim 4, wherein the surface of the nitride semiconductor substrate is inclined in a range of ± 0.1 to 0.7 ° from the C plane or the M plane regardless of the direction of the inclination. Device manufacturing method. A nitride semiconductor laser device comprising a plurality of nitride semiconductor layers using a ZrB ₂ substrate or a substrate having a spinel structure made of Mg, Al, and O, wherein at least one or a plurality of well layers and barrier layers are formed. has an active layer of a quantum well ^structure, 1310cm -1 in gas analysis by Fourier transform infrared spectroscopy, high peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 was reduced impurity observed below a predetermined value A method for manufacturing a nitride semiconductor light emitting device, comprising using pure ammonia as a nitrogen source. What is claimed is: 1. A nitride semiconductor laser device comprising a plurality of nitride semiconductor layers, comprising: an active layer having a quantum well structure formed by at least one or more well layers and barrier layers; analysis at ^1310cm -1, a high-purity ammonia peak absorption wavelength of 1320 cm ^-1 and 1330 cm ^-1 was reduced impurity observed below a predetermined value as a nitrogen source, as or the nitride semiconductor layer in the device A method for manufacturing a nitride semiconductor light emitting device, comprising P as a crystal composition.

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