JP2004083949A - Simultaneous thin film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for simultaneous deposition of thin films on tow or more sides, which apparatus can subject a plurality of deposition surfaces varying in deposition components to simultaneous deposition of different specifications and can improve deposition efficiency by preventing the deformation of a substrate to be induced when only the one side of the substrate is subjected to the deposition. <P>SOLUTION: The apparatus is provided with partitions 13 of the number corresponding to the number of the deposition surfaces to be deposited with thin films of deposition components 7 within a vacuum chamber 10 to compartmentalize the vacuum chamber 10 to a plurality of deposition cells c<SB>1</SB>to c<SB>6</SB>corresponding to the partitions 13 and deposition particle generators are included in the respective deposition cells c<SB>1</SB>to c<SB>6</SB>, thereby simultaneously depositing the films on a plurality of the surfaces. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a multiple-surface simultaneous thin film deposition apparatus, and in particular, divides a vacuum chamber into a plurality of deposition cells, equip each of the deposition cells with a deposition particle generator, and perform deposition simultaneously on a plurality of surfaces. The present invention relates to an apparatus for simultaneously forming a plurality of thin films.
[0002]
[Prior art]
A conventional example of a thin film forming apparatus such as an ion beam sputtering apparatus will be described with reference to FIG.
In the vacuum chamber 10, the ion source 1 is attached and accommodated on a side wall thereof, and the target 2 is attached and accommodated on a bottom wall. The gas introduction pipe 9 is introduced and fixed to the side wall through the gas introduction pipe 9. The vacuum chamber 10 is further provided with a vacuum pump (not shown). The ion source 1 is attached and fixed to the inner surface of the side wall of the vacuum chamber 10, and an ion extraction grid to which a high voltage is applied is installed at the ion radiation end. The target 2 is fixed to a bottom wall of the vacuum chamber 10 via a target holder (not shown). The film forming component holder 8 is rotatably supported by a rotary drive shaft 81 which is inserted through the upper wall of the vacuum chamber 10 in an airtight manner. The film forming component holder 8 is rotationally driven from the outside via a rotary drive shaft 81. Then, a film forming component 7 on which a thin film is to be formed is attached to the lower surface of the film forming component holder 8.
[0003]
The vacuum chamber 10 is evacuated by a vacuum pump (not shown), and then an inert gas is introduced into the vacuum chamber 10 through the gas introduction pipe 9. Here, an ion beam 3 is generated from the ion source 1.
The ion beam 3 generated from the ion source 1 is accelerated at high speed by an ion extraction grid to which a high voltage is applied, and is extracted and emitted as an ion beam. This beam collides with the target 2 and sputters the material constituting the target 2. As the material of the target 2, various kinds of materials such as a metal material, an insulating material, and the like can be used. The sputtered particles 4 of the target constituent material sputtered from the target 2 adhere to the surface of the film forming part 7 composed of the substrate held by the film forming part holder 8, and a thin film of the target constituent material is formed thereon. Become. When a thin film is being formed, the film forming component holder 8 is rotated by the rotation shaft 81, whereby the thickness of the thin film formed can be made uniform.
[0004]
[Problems to be solved by the invention]
In the thin film forming apparatus described above, the film forming surface of the film forming component 7 must naturally be directed in the scattering direction a of the sputtered particles 4. Assuming that the film forming component 7 is a substrate, when film formation is performed on both front and back surfaces, a position change is performed in which both surfaces on which a thin film is to be formed are reversed to face each other in the scattering direction of the film forming particles for each surface. Need to do.
In the above-described reverse switching of the film forming surface, the operation of the thin film forming apparatus is stopped, the film forming component 7 is removed from the film forming component rotating holder 8, and the film forming surface is reversed and mounted again. Then, the thin film forming apparatus is returned to the operating state again. This requires time and labor, and there is also an accuracy error in which similar thin film formation cannot be performed on both surfaces of the film forming component 7 due to positional displacement. When the film forming component 7 is a substrate, if the thin film is formed on only one side, the substrate may be deformed due to the film stress of the thin film depending on the substrate. This deformation can be prevented by simultaneously forming similar thin films on both surfaces of the film forming component substrate 7, but this cannot be handled by a conventional thin film forming apparatus. The present invention provides a number of partitions corresponding to the number of deposition surfaces on which a thin film of a deposition component is to be deposited inside a vacuum chamber, and partitions the vacuum chamber into a plurality of deposition cells corresponding to each partition. By providing a film forming particle generator in each of the film forming cells, it is possible to provide a multi-surface simultaneous thin film forming apparatus which solves the above-mentioned problem.
[0005]
[Means for Solving the Problems]
The number of partitions 13 corresponding to the number of deposition surfaces on which the thin film of the deposition component 7 is to be deposited is provided inside the vacuum chamber 10, and the vacuum chamber 10 is provided with a plurality of deposition cells c ₁ corresponding to the respective partitions 13. to partitioned into c _6, to constitute a multi-surface simultaneous thin film forming apparatus for forming simultaneously on a plurality of surfaces and allowed to include a deposition particle generating apparatus in each of from KakuNarumaku cell c ₁ c _6.
Then, in the above-described apparatus for simultaneous thin film deposition on a plurality of surfaces, partitions 13 corresponding to the number of deposition surfaces on which a thin film is to be deposited are provided inside the vacuum chamber 10, and these partitions 13 are used to form a film inside the vacuum chamber 10. The vacuum chamber 10 is divided into a plurality of film forming cells c ₁ to c ₆ corresponding to the partition walls 13 with the film forming part accommodating cell 14 for accommodating and mounting the part 7 and with the film forming part accommodating cell 14 interposed therebetween. A multi-surface simultaneous thin film deposition apparatus was constructed.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described with reference to the embodiment of FIG. FIG. 1 is a conceptual diagram illustrating an embodiment in which a substrate having two film forming surfaces facing each other is used as a film forming component 7. A partition 13 corresponding to each of the two deposition surfaces is provided inside the vacuum chamber 10, and the partition 13 constitutes a deposition component accommodating cell 14 for accommodating the deposition component 7 inside the vacuum chamber 10. partitioning the deposition component containing cell 14 to vacuum chamber 10 while interposing the intermediate to the first film forming cells c ₁ and second film forming cells c ₂ corresponding to the respective partition walls 13. An opening 131 is formed in the center of the partition 13. Each first deposition cell c ₁ and the second film forming cells c _2, the ion source 1, the target 2, the vacuum pump 6, the gas introduction pipe 9 is made to comprise. Reference numeral 3 denotes an ion beam generated from the ion source 1 and reference numeral 4 denotes sputtered particles of a target constituent material sputtered from the target 2. The film forming component 7 is accommodated and mounted in the film forming component housing cell 14 via an appropriate film forming component holder (not shown) corresponding to the opening 131 formed in the partition wall 13.
[0007]
Here, first, the vacuum pump 6 is operated to evacuate the first film forming cell c ₁ and the second film forming cell c ₂ of the vacuum chamber 10, and then the first film forming cell c ₁ is exhausted through the gas introduction pipe 9. introducing an inert gas into the membrane cells c ₁ and second film forming in the cell c _2. In this state, the ion source 1 is operated to generate the ion beam 3.
The ion beam 3 generated from the ion source 1 is accelerated at high speed by an ion extraction grid to which a high voltage is applied inside the ion source 1. The ion beam 3 collides with the target 2 and sputters a substance constituting the target 2. As the material of the target 2, various kinds of materials such as a metal material, an insulating material, and the like can be used. Sputter particles sputtered from the target 2 4, in the first film-forming cells c ₁ is radiated in the scattering direction a, the scattering direction b opposite to the scattering direction a in the second deposition cell c ₂ Radiated. The sputtered particles 4 travel and pass through the openings 131 formed in the partition walls 13 and adhere to the surface of the film-forming component 7 attached and held in correspondence with the openings 131, where a thin film of the target constituent material is formed. Is done.
[0008]
FIG. 2 is a diagram for explaining another embodiment. In FIG. 2, a rectangular parallelepiped having two sets of two opposing surfaces is defined as a film forming component 7.
In this embodiment, similarly to the previous embodiment, partitions 13 corresponding to each of the six deposition surfaces are provided inside the vacuum chamber 10, and the deposition components 7 are placed inside the vacuum chamber 10 by the partitions 13. The film forming component accommodating cell 14 for accommodating and attaching is formed, and the vacuum chamber 10 is connected to the first film forming cells c _{1 to} c 6 corresponding to each partition 13 with the film forming component accommodating cell 14 interposed therebetween. partitioning the membrane cell _{c 6.} In this embodiment, the vacuum chamber 10 is composed of the first to sixth film forming cells c _{1 to} c ₆ and the film forming part accommodating cell 14 in total. An opening is similarly formed in the center of the partition 13. Each of the first deposition cell c ₁ to sixth deposition cell c _6, an ion source 1, the target 2, the vacuum pump 6, the gas introduction pipe 9 is made to comprise. Reference numeral 3 denotes an ion beam generated from the ion source 1 and reference numeral 4 denotes sputtered particles of a target constituent material sputtered from the target 2. The film forming part 7 is housed and mounted in the film forming part accommodating cell 14 via an appropriate film forming part holder (not shown) so that the film forming surface corresponds to the opening 131 formed in the partition wall 13.
[0009]
【The invention's effect】
As described above, according to the present invention, the number of partitions corresponding to the number of deposition surfaces on which the thin film of the deposition component is to be formed is provided inside the vacuum chamber, and the vacuum chamber corresponds to each partition. A plurality of film forming cells are formed, and a film forming particle generator is provided in each of the film forming cells, whereby films can be simultaneously formed on a plurality of surfaces of a film forming component. Thereby, film formation with different specifications can be simultaneously performed on a plurality of different film formation surfaces of the film formation component, and film formation efficiency can be improved.
In the conventional example, when a thin film is to be formed on a plurality of surfaces of a film forming component, the reverse of the film forming surface is switched by stopping the operation of the thin film forming apparatus and removing the film forming component from the film forming component holder. A time-consuming operation such as reversing the film surface and reattaching the film, and returning the thin film forming apparatus to an operating state again was required. However, the present invention does not require these operations and is required for thin film deposition. The time can be greatly reduced.
When a film-forming component is a substrate, thin films are simultaneously formed on both sides of the substrate, thereby canceling the film stress applied to both sides of the substrate and preventing the deformation of the substrate that occurs when the film is formed on only one side. can do.
[Brief description of the drawings]
FIG. 1 illustrates an embodiment.
FIG. 2 is a diagram illustrating another embodiment.
FIG. 3 illustrates a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Ion source 2 Target 4 Sputtered particle 7 Deposition component 8 Deposition component holder 9 Gas introduction pipe 10 Vacuum chamber 13 Partition wall 14 Deposition component storage cell 81 Rotation drive shaft 131 Openings c _{1 to} c ₆ Deposition cell

Claims (2)

By providing a number of partitions corresponding to the number of deposition surfaces on which a thin film of a deposition component is to be deposited inside the vacuum chamber, dividing the vacuum chamber into a plurality of deposition cells corresponding to each partition,
A multi-surface simultaneous thin film forming apparatus, wherein each of the film forming cells is provided with a film forming particle generator and simultaneously forms films on a plurality of surfaces. The multiple-surface simultaneous thin film deposition apparatus according to claim 1,
Partition walls are provided in the vacuum chamber corresponding to the number of deposition surfaces on which thin films are to be formed, and these partition walls constitute a deposition component storage cell for accommodating the deposition components in the vacuum chamber. A multi-surface simultaneous thin film forming apparatus, wherein a vacuum chamber is divided into a plurality of film forming cells corresponding to respective partition walls with a cell interposed therebetween.

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