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JP2004053292A - Interposer substrate continuity inspection method - Google Patents

Interposer substrate continuity inspection method Download PDF

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Publication number
JP2004053292A
JP2004053292A JP2002207870A JP2002207870A JP2004053292A JP 2004053292 A JP2004053292 A JP 2004053292A JP 2002207870 A JP2002207870 A JP 2002207870A JP 2002207870 A JP2002207870 A JP 2002207870A JP 2004053292 A JP2004053292 A JP 2004053292A
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Prior art keywords
continuity
inspection
wiring layer
substrate
interposer substrate
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JP4131137B2 (en
Inventor
Naoyuki Akiyama
秋山 直之
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Toppan Inc
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Toppan Printing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15173Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias

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  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

【課題】2メタルBGA等のインターポーザ基板の配線層の導通検査を同一面で検査できるようにしたインターポーザ基板の導通検査方法を提供するこことを目的とする。
【解決手段】絶縁基材11の両面に12μm厚の銅箔を貼り付けた銅貼り積層板の銅箔の所定位置にレーザー加工等によりビア用孔を形成して、電解銅めっきを行い、所定厚の導体層及びフィルドビア22を形成し、導体層をパターニング処理して、基板接続用電極23、共通測定電極51及び52、配線層21、ICチップ接続用電極24及び測定用配線リード25を設けた導通検査用インターポーザ基板50を作製する。さらに、測定検査プローブ101を基板接続用電極23に、測定検査プローブ102a及び102bを共通測定電極51及び52に押し当て、配線層21の導通、短絡を検査装置100にて判定する。
【選択図】図2
An object of the present invention is to provide a method for inspecting continuity of an interposer substrate such that a continuity inspection of a wiring layer of an interposer substrate such as a two-metal BGA can be inspected on the same surface.
A via hole is formed at a predetermined position of a copper foil of a copper-clad laminate in which copper foil having a thickness of 12 μm is bonded to both surfaces of an insulating base material 11 by laser processing or the like, and electrolytic copper plating is performed. A thick conductor layer and a filled via 22 are formed, and the conductor layer is patterned to provide a substrate connection electrode 23, common measurement electrodes 51 and 52, a wiring layer 21, an IC chip connection electrode 24, and a measurement wiring lead 25. The continuity inspection interposer substrate 50 is manufactured. Further, the measurement / inspection probe 101 is pressed against the substrate connection electrode 23, and the measurement / inspection probes 102a and 102b are pressed against the common measurement electrodes 51 and 52, and the continuity and short circuit of the wiring layer 21 are determined by the inspection apparatus 100.
[Selection diagram] FIG.

Description

【0001】
【発明の属する技術分野】
本発明は、半導体素子をプリント配線板上に実装するための半導体パッケージの部材として用いられるインターポーザ基板の配線層の導通状態を検査するインターポーザ基板の導通検査方法に関する。
【0002】
【従来の技術】
パソコンやOA機器、家電製品、音響機器、ゲーム機などに代表される電子機器においては半導体素子を直接プリント配線板上に実装することが難しいため、ほとんどの場合、半導体素子はインターポーザと呼ばれる基板に搭載された半導体パッケージという形態にしてから、電子機器装置に実装されている。
近年、これらの電子機器は小型・高性能化の一途をたどっており、半導体パッケージについても更なる小型化、配線の高密度化の要求が高まってきている。
【0003】
半導体パッケージにおいて、半導体素子が搭載される電子回路基板には絶縁基材の表面に電気的な導通をとるための配線層が設けられている。電子回路基板としては、絶縁基材の片面に配線層を形成したものから始まり、配線層の高密度化が進むにつれて、両面配線板、あるいは絶縁層と配線層を交互に積み重ねた多層型配線板が作り出されるようになってきた。
代表的な電子回路基板として、ポリイミドに代表される絶縁性材料のテープや板材を芯材とした配線板があり、近年は両面に配線層が存在するテープ状の両面配線板(インターポーザ基板)、通称2メタルTABに対する要求が高くなっている。
【0004】
両面配線板は片面配線板に比べて両面に配線層が存在するだけではなく、バイアホールと呼ばれる表裏の配線層を電気的に接続するための構造を有する点に特徴がある。
バイアホールは、絶縁基材の両面に銅箔を貼り付けた両面銅箔積層板に配線層を形成する際、まず、絶縁基材及び銅箔にビア用孔をレーザー加工等で形成し、このビア用孔に電解銅めっき等で導体層を埋め込むなどして形成し、絶縁基材表裏の銅箔を電気的に接続する。その後、表裏の銅箔をパターニング処理して配線層及び電極を形成することで、2メタルのインターポーザ基板が得られる。
【0005】
インターポーザ基板の配線層はプリント配線基板に実装するための基板接続用電極とICチップ接続用電極との間を電気的に接続している。通常は、実装の形態から、絶縁基材の一方の面にICチップ接続用電極と配線層が形成され、絶縁基材の他方の面に基板接続用電極が形成されており、配線層と基板接続用電極とはビアホールにて電気的に接続されている。この配線層が途中で断線したり、隣り合う配線層とショートしていたりすると製品としての価値が無くなってしまうため、出荷前に外観検査や電気検査などを行っている。
【0006】
【発明が解決しようとする課題】
配線層の導通検査方法は、配線層の両端に針状の検査用プローブを接触させて電気抵抗を測定し、判定するのが一般的である。
配線層が片面のみの1メタルBGA基板の場合は、基板接続用電極とICチップ接続用電極は同じ面にあるので、検査用プローブは1つの面側に配置して、それぞれの電極に接触させて電気的な検査を行うことが多い。
一方、2メタルBGA基板では、ICチップをインターポーザ基板の中心部に搭載し、基板接続用電極がICチップより外側に配置するファンアウト型の場合、配線層の数をできるだけ多くするため、ICチップ接続用電極とは反対側に、基板接続用電極を配置することが多い。
【0007】
この様な形態の場合、検査用プローブを両面に配置してそれぞれの電極に押し当てることが必要になる。この際、インターポーザ基板の厚みが100μm以下になると、柔軟性の関係から、表裏の電極に検査用プローブを正確に押し当てることが難しくなる。このため、装置は複雑になり、非常に高価なものとなる。
【0008】
また、近年の傾向として、半導体パッケージのサイズが小さくなる一方、電極数は多くなる傾向にある。このため、ICチップ接続用電極は30〜100μm角になってきており、検査用プローブを精度よく接触させることが難しいという問題点がある。
また、電極数の増加と微細化傾向のインターポーザ基板の導通検査を効率良く、精度良く検査するために、従来の検査プローブを用いた導通検査から、絶縁基材上に検査電極が多数配置された検査治具を使って導通検査を行う方法が導入されている。この場合も、表裏の電極に検査電極を精度良く位置合わせするのは難しいという問題を有する。
【0009】
本発明は上記問題点に鑑み考案されたもので、2メタルBGA等のインターポーザ基板の配線層の導通検査を同一面で検査できるようにしたインターポーザ基板の導通検査方法を提供することを目的とする。
【0010】
【課題を解決するための手段】
本発明において上記課題を達成するために、まず請求項1においては、絶縁基材の一方の面に基板接続用電極が、他方の面に前記基板接続用電極とビア接続された配線層及びICチップ接続用電極が形成されてなるインターポーザ基板の前記配線層の導通検査方法であって、前記絶縁基材の前記基板接続用電極と同一面のICチップ搭載領域に前記配線層とビア接続された共通測定電極を設けて、前記基板接続用電極と前記共通測定電極に測定検査プローブを押し当て、前記配線層の導通状態を検査するようにしたことを特徴とするインターポーザ基板の導通検査方法としたものである。
【0011】
また、請求項2においては、前記共通測定電極が少なくとも2個以上設けられていることを特徴とする請求項1記載のインターポーザ基板の導通検査方法としたものである。
【0012】
【発明の実施の形態】
本発明のインターポーザ基板の導通検査方法は、中間製品である導通検査用インターポーザ基板のICチップ搭載部に共通測定電極を設けて、導通検査用インターポーザ基板の同一面で測定検査プローブを押し当て、配線層の導通状態を検査できるようにしたものである。
導通検査用インターポーザ基板の導通検査は複数の配線層の端部を共通測定電極に接続して、個々の配線層の導通及び配線層間の短絡を判定しているが、共通測定電極は2個以上いくつでも良いが、配線層間の短絡を効率よく、正確に検出するためには、隣り合う配線層を異なる共通測定電極に接続することで、隣り合う配線層が短絡しているかどうかを判定することができる2個の共通測定電極を設けることが好適である。
上記共通測定電極は導通検査が終了した時点で金型でICチップ搭載領域及び共通測定電極を抜き加工してデバイスホールを作製するか、エッチング加工等で共通測定電極を除去する等の方法で、製品状態のインターポーザ基板を得る。
【0013】
以下、インターポーザ基板の導通検査方法について説明する。
まず、50μm厚のポリイミド基板からなる絶縁基材11の両面に12μm厚の銅箔を貼り付けた銅貼り積層板の銅箔の所定位置にレーザー加工等によりビア用孔を形成して、電解銅めっきを行い、所定厚の導体層及びフィルドビア22を形成し、導体層上に、フォトレジストを塗布して感光層を形成し、パターン露光、現像等の一連のパターニング処理を行って、基板接続用電極23、共通測定電極51及び52、配線層21、ICチップ接続用電極24及び測定用配線リード25をそれぞれ形成し、ソルダーレジストパターンを形成した後ニッケル、金めっきを行って、絶縁基材11の同一面に基板接続用電極23、共通測定電極51及び52を設けた2メタルBGAの導通検査用インターポーザ基板50を作製する(図1(a)、(b)及び(c)参照)。
ここで、共通測定電極51及び52はICチップ搭載領域に形成されており、共通測定電極51及び52は測定用配線リード25及びフィルドビア22を介してICチップ接続用電極24と電気的に接続されている。
【0014】
次に、測定検査プローブ101を導通検査用インターポーザ基板50の基板接続用電極23に、測定検査プローブ102a及び102bを共通測定電極51及び52に押し当て、配線層21の導通を、配線層21間の短絡を検査装置100にて判定する(図2参照)。ここで、測定検査プローブ102a及び102bはそのままで、測定検査プローブ101を順次移動して全配線層の導通状態の検査を行う。
【0015】
以下、導通検査用インターポーザ基板50の共通測定電極を2個用いて配線層の導通、配線層間の短絡の正常/異常を判定する導通検査方法について説明する。
図3は、配線層21a及び21bに断線、短絡がない状態の事例を示すもので、測定検査プローブ101を基板接続用電極23aに接続し、測定検査プローブ102aを共通測定電極51に、測定検査プローブ102bを共通測定電極52に接続して導通検査を実施すると、配線層21a及び21bに断線、短絡がないため、短絡表示灯がOFFに、導通表示灯がONに表示され、配線層21aの導通状態は正常、配線層21aと配線層21b間の短絡は正常と検査装置100にて判定される(図3参照)。さらに、測定検査プローブ101を順次移動させて、全配線層の導通検査を行う。
【0016】
図4は、配線層21aに断線があり、配線層21aと及び配線層21b間には短絡がない状態の事例を示すもので、測定検査プローブ101を基板接続用電極23aに接続し、測定検査プローブ102aを共通測定電極51に、測定検査プローブ102bを共通測定電極52に接続して導通検査を実施すると、導通表示灯がOFFに、短絡表示灯がOFFに表示され、配線層21aが導通状態は異常、配線層21aと配線層21b間の短絡は正常と検査装置100にて判定される(図4参照)。
【0017】
図5は、配線層21aと配線層21b間に短絡、配線層21aと及び配線層21bには断線がない状態の事例を示すもので、測定検査プローブ101を基板接続用電極23aに接続し、測定検査プローブ102aを共通測定電極51に、測定検査プローブ102bを共通測定電極52に接続して導通検査を実施すると、導通表示灯がONに、短絡表示灯がONに表示され、配線層21aが導通状態は正常、配線層21aと配線層21b間の短絡は異常と検査装置100にて判定される(図5参照)。
【0018】
こうして、導通検査用インターポーザ基板50のすべての配線層の導通検査を実施した後良品と判定された導通検査用インターポーザ基板50について、ICチップ搭載領域の共通測定電極51及び52、測定用配線リード25が形成された絶縁基材を金型にて抜き加工して、図6(a)、(b)及び(c)に示すような、中心部にデバイスホール41を有するインターポーザ基板60を作製する。
【0019】
【発明の効果】
本発明のインターポーザ基板の導通検査方法を適用することにより、同一面での測定用プローブを用いた導通検査が可能になり、さらに、共通測定電極を複数個設けることにより、インターポーザ基板の配線層の導通及び配線層間の短絡状態を効率よく、正確に検査することができ、導通検査分野での優れた実用上の効果を発揮する。
【図面の簡単な説明】
【図1】(a)は、本発明のインターポーザ基板の導通検査方法に用いる導通検査用インターポーザ基板の一例の表面を示す模式平面図である。
(b)は、(a)をA−A’線で切断した模式構成断面図である。
(c)は、本発明のインターポーザ基板の導通検査方法に用いる導通検査用インターポーザ基板の一例の裏面を示す模式平面図である。
【図2】導通検査用インターポーザ基板を用いて導通検査を行っている状態を示す説明図である。
【図3】共通測定電極と基板接続用電極を用いて導通検査を行っている状態を示す説明
図である。
【図4】共通測定電極と基板接続用電極を用いて導通検査を行っている状態を示す説明
図である。
【図5】共通測定電極と基板接続用電極を用いて導通検査を行っている状態を示す説明
図である。
【図6】(a)は、導通検査を終了して、共通測定電極及び測定用配線リードを除去した状態を示すインターポーザ基板の表面を示す模式平面図である。
(b)は、(a)をA−A’線で切断した模式構成断面図である。
(c)は、導通検査を終了して、共通測定電極及び測定用配線リードを除去した状態を示すインターポーザ基板の裏面を示す模式平面図である。
【符号の説明】
11……絶縁基材
21、21a、21b……配線層
22……フィルドビア
23、23a、23b……基板接続用電極
24……ICチップ接続用電極
25……測定用配線リード
41……デバイスホール
50……導通検査用インターポーザ基板
51、52……共通測定電極
60……インターポーザ基板
100……検査装置
101、102a、102b……測定検査プローブ
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a continuity inspection method of an interposer substrate for inspecting a continuity state of a wiring layer of an interposer substrate used as a member of a semiconductor package for mounting a semiconductor element on a printed wiring board.
[0002]
[Prior art]
In electronic devices such as personal computers, office automation equipment, home appliances, audio equipment, and game machines, it is difficult to mount semiconductor elements directly on a printed wiring board. In most cases, semiconductor elements are mounted on a substrate called an interposer. The semiconductor package is mounted on an electronic device after the semiconductor package is mounted.
In recent years, these electronic devices have been steadily reduced in size and performance, and demands for further downsizing and higher-density wiring of semiconductor packages have been increasing.
[0003]
In a semiconductor package, a wiring layer for establishing electrical continuity is provided on a surface of an insulating base material on an electronic circuit board on which a semiconductor element is mounted. An electronic circuit board starts with a wiring layer formed on one side of an insulating base material, and as the density of the wiring layers increases, a double-sided wiring board or a multilayer wiring board in which insulating layers and wiring layers are alternately stacked Is being created.
As a typical electronic circuit board, there is a tape made of an insulating material represented by polyimide or a wiring board made of a board material as a core material. In recent years, a tape-shaped double-sided wiring board (interposer board) having a wiring layer on both sides, The demand for the so-called two-metal TAB is increasing.
[0004]
Compared to a single-sided wiring board, a double-sided wiring board is characterized in that it not only has a wiring layer on both sides but also has a structure called a via hole for electrically connecting the front and back wiring layers.
When forming a wiring layer on a double-sided copper foil laminate in which copper foil is attached to both sides of an insulating base material, first, a via hole is formed in the insulating base material and the copper foil by laser processing or the like. It is formed by embedding a conductor layer in the via hole by electrolytic copper plating or the like, and electrically connects the copper foil on the front and back of the insulating base material. After that, a wiring layer and an electrode are formed by patterning the front and back copper foils, thereby obtaining a two-metal interposer substrate.
[0005]
The wiring layer of the interposer board electrically connects between a board connecting electrode to be mounted on a printed wiring board and an IC chip connecting electrode. Usually, from the mounting mode, an IC chip connection electrode and a wiring layer are formed on one surface of the insulating base material, and a substrate connection electrode is formed on the other surface of the insulating base material. The connection electrodes are electrically connected through via holes. If this wiring layer breaks in the middle or short-circuits with an adjacent wiring layer, the value as a product is lost. Therefore, appearance inspection, electrical inspection, etc. are performed before shipment.
[0006]
[Problems to be solved by the invention]
In a method of inspecting the continuity of a wiring layer, a needle-shaped inspection probe is brought into contact with both ends of the wiring layer to measure and determine the electric resistance.
When the wiring layer is a one-metal BGA substrate having only one surface, the electrodes for connecting the substrate and the electrodes for connecting the IC chip are on the same surface. Therefore, the inspection probe is arranged on one surface side and brought into contact with each electrode. Electrical testing is often done.
On the other hand, in the case of a two-metal BGA substrate, in the case of a fan-out type in which an IC chip is mounted at the center of an interposer substrate and substrate connection electrodes are arranged outside the IC chip, the number of wiring layers is increased as much as possible. In many cases, a substrate connection electrode is arranged on the side opposite to the connection electrode.
[0007]
In such a case, it is necessary to arrange the inspection probes on both sides and press them against the respective electrodes. At this time, if the thickness of the interposer substrate is 100 μm or less, it is difficult to accurately press the inspection probe against the front and back electrodes because of the flexibility. This makes the device complicated and very expensive.
[0008]
In recent years, the size of a semiconductor package has been reduced, while the number of electrodes has been increasing. For this reason, the electrode for connecting the IC chip has become 30 to 100 μm square, and there is a problem that it is difficult to accurately contact the inspection probe.
In addition, in order to efficiently and accurately perform a continuity test of an interposer substrate with an increase in the number of electrodes and miniaturization, a large number of test electrodes are arranged on an insulating base material from a continuity test using a conventional test probe. A method of conducting a continuity test using an inspection jig has been introduced. Also in this case, there is a problem that it is difficult to accurately align the inspection electrode with the front and back electrodes.
[0009]
The present invention has been devised in view of the above problems, and has as its object to provide a continuity inspection method for an interposer substrate that enables a continuity inspection of a wiring layer of an interposer substrate such as a two-metal BGA to be performed on the same surface. .
[0010]
[Means for Solving the Problems]
In order to achieve the above object in the present invention, first, in claim 1, a wiring layer and an IC having a substrate connection electrode on one surface of an insulating base material and a via connection with the substrate connection electrode on the other surface are provided. A method for inspecting continuity of said wiring layer of an interposer substrate on which a chip connection electrode is formed, wherein said wiring layer is via-connected to an IC chip mounting region of said insulating substrate on the same surface as said substrate connection electrode. A continuity inspection method for an interposer substrate, wherein a common measurement electrode is provided, a measurement inspection probe is pressed against the substrate connection electrode and the common measurement electrode, and the continuity state of the wiring layer is inspected. Things.
[0011]
According to a second aspect of the present invention, there is provided the interposer substrate conduction inspection method according to the first aspect, wherein at least two or more of the common measurement electrodes are provided.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
The continuity inspection method for an interposer substrate according to the present invention includes providing a common measurement electrode on an IC chip mounting portion of the continuity inspection interposer substrate as an intermediate product, pressing a measurement inspection probe on the same surface of the continuity inspection interposer substrate, and wiring. This allows the conduction state of the layer to be inspected.
In the continuity test of the continuity test interposer substrate, the ends of a plurality of wiring layers are connected to a common measurement electrode to determine the continuity of each wiring layer and the short circuit between the wiring layers. Any number can be used, but in order to efficiently and accurately detect a short circuit between wiring layers, it is necessary to determine whether adjacent wiring layers are short-circuited by connecting adjacent wiring layers to different common measurement electrodes. It is preferred to provide two common measuring electrodes that can be used.
At the time when the continuity test is completed, the common measurement electrode is cut out of the IC chip mounting area and the common measurement electrode with a mold to form a device hole, or the common measurement electrode is removed by etching or the like. Obtain an interposer substrate in a product state.
[0013]
Hereinafter, a method for inspecting the continuity of the interposer substrate will be described.
First, a via hole is formed at a predetermined position of a copper foil of a copper-clad laminate in which a 12-μm-thick copper foil is attached to both sides of an insulating base material 11 made of a 50-μm-thick polyimide substrate by laser processing or the like. Plating is performed to form a conductor layer and filled via 22 having a predetermined thickness, a photoresist is applied on the conductor layer to form a photosensitive layer, and a series of patterning processes such as pattern exposure and development are performed to connect the substrate. The electrode 23, the common measurement electrodes 51 and 52, the wiring layer 21, the IC chip connection electrode 24, and the measurement wiring lead 25 are respectively formed, and after forming a solder resist pattern, nickel and gold plating are performed, and the insulating base material 11 is formed. Of the two-metal BGA continuity inspection interposer substrate 50 having the substrate connection electrode 23 and the common measurement electrodes 51 and 52 on the same surface (FIGS. 1A and 1B). And (c)).
Here, the common measurement electrodes 51 and 52 are formed in the IC chip mounting area, and the common measurement electrodes 51 and 52 are electrically connected to the IC chip connection electrodes 24 via the measurement wiring leads 25 and the filled vias 22. ing.
[0014]
Next, the measurement and inspection probes 101 are pressed against the substrate connection electrodes 23 of the continuity inspection interposer substrate 50, and the measurement and inspection probes 102a and 102b are pressed against the common measurement electrodes 51 and 52, and the continuity of the wiring layer 21 is set between the wiring layers 21. Is determined by the inspection apparatus 100 (see FIG. 2). Here, the measurement / inspection probes 101 are sequentially moved while the measurement / inspection probes 102a and 102b remain as they are to inspect the continuity of all wiring layers.
[0015]
Hereinafter, a continuity inspection method for determining the continuity of the wiring layer and the normality / abnormality of the short-circuit between the wiring layers by using two common measurement electrodes of the continuity inspection interposer substrate 50 will be described.
FIG. 3 shows an example in which there is no disconnection or short circuit in the wiring layers 21a and 21b. The measurement / inspection probe 101 is connected to the substrate connection electrode 23a, and the measurement / inspection probe 102a is connected to the common measurement electrode 51. When the continuity test is performed by connecting the probe 102b to the common measurement electrode 52, there is no disconnection or short circuit in the wiring layers 21a and 21b, so that the short-circuit indicator is turned off, the continuity indicator is turned on, and the wiring layer 21a is turned off. The inspection device 100 determines that the conduction state is normal and the short circuit between the wiring layers 21a and 21b is normal (see FIG. 3). Further, the measurement inspection probe 101 is sequentially moved to conduct a continuity inspection of all wiring layers.
[0016]
FIG. 4 shows a case where the wiring layer 21a is disconnected and there is no short circuit between the wiring layer 21a and the wiring layer 21b. When the probe 102a is connected to the common measurement electrode 51 and the measurement test probe 102b is connected to the common measurement electrode 52 to perform a continuity test, the continuity indicator is turned off, the short-circuit indicator is turned off, and the wiring layer 21a is in a conductive state. Is abnormal, and the inspection device 100 determines that the short circuit between the wiring layers 21a and 21b is normal (see FIG. 4).
[0017]
FIG. 5 shows a case where a short circuit occurs between the wiring layer 21a and the wiring layer 21b, and there is no disconnection between the wiring layer 21a and the wiring layer 21b. The measurement / inspection probe 101 is connected to the substrate connection electrode 23a. When the continuity test is performed by connecting the measurement test probe 102a to the common measurement electrode 51 and the measurement test probe 102b to the common measurement electrode 52, the continuity indicator is turned on, the short-circuit indicator is turned on, and the wiring layer 21a is turned off. The conduction state is normal, and the short circuit between the wiring layers 21a and 21b is determined to be abnormal by the inspection apparatus 100 (see FIG. 5).
[0018]
After conducting the continuity inspection of all the wiring layers of the continuity inspection interposer substrate 50, the common measurement electrodes 51 and 52 in the IC chip mounting area and the measurement wiring leads 25 are determined for the continuity inspection interposer substrate 50 which is determined to be non-defective. The insulating substrate on which is formed is punched out by a mold to produce an interposer substrate 60 having a device hole 41 at the center as shown in FIGS. 6 (a), 6 (b) and 6 (c).
[0019]
【The invention's effect】
By applying the continuity inspection method of the interposer substrate of the present invention, continuity inspection using a measurement probe on the same surface becomes possible, and furthermore, by providing a plurality of common measurement electrodes, the wiring layer of the interposer substrate can be inspected. The continuity and the short-circuit state between the wiring layers can be efficiently and accurately inspected, and an excellent practical effect in the continuity inspection field is exhibited.
[Brief description of the drawings]
FIG. 1A is a schematic plan view showing the surface of an example of a continuity inspection interposer substrate used in the continuity inspection method for an interposer substrate according to the present invention.
(B) is a schematic configuration sectional view of (a) cut along the line AA '.
(C) is a schematic plan view showing the back surface of an example of the continuity inspection interposer substrate used in the continuity inspection method of the interposer substrate of the present invention.
FIG. 2 is an explanatory diagram showing a state in which a continuity test is being performed using a continuity test interposer substrate.
FIG. 3 is an explanatory diagram showing a state where a continuity test is performed using a common measurement electrode and a substrate connection electrode.
FIG. 4 is an explanatory diagram showing a state in which a continuity test is performed using a common measurement electrode and a substrate connection electrode.
FIG. 5 is an explanatory diagram showing a state where a continuity test is performed using a common measurement electrode and a substrate connection electrode.
FIG. 6A is a schematic plan view showing a surface of an interposer substrate in a state where a continuity test is completed and a common measurement electrode and a measurement wiring lead are removed.
(B) is a schematic configuration sectional view of (a) cut along the line AA '.
(C) is a schematic plan view showing the back surface of the interposer substrate in a state where the continuity test has been completed and the common measurement electrode and the measurement wiring lead have been removed.
[Explanation of symbols]
11 Insulating base material 21, 21a, 21b Wiring layer 22 Filled via 23, 23a, 23b Board connecting electrode 24 IC chip connecting electrode 25 Measurement wiring lead 41 Device hole 50 continuity inspection interposer substrates 51, 52 common measurement electrode 60 interposer substrate 100 inspection devices 101, 102a, 102b measurement inspection probe

Claims (2)

絶縁基材の一方の面に基板接続用電極が、他方の面に前記基板接続用電極とビア接続された配線層及びICチップ接続用電極が形成されてなるインターポーザ基板の前記配線層の導通検査方法であって、前記絶縁基材の前記基板接続用電極と同一面のICチップ搭載領域に前記配線層とビア接続された共通測定電極を設けて、前記基板接続用電極と前記共通測定電極に測定検査プローブを押し当て、前記配線層の導通状態を検査するようにしたことを特徴とするインターポーザ基板の導通検査方法。A continuity test of the wiring layer of the interposer substrate in which an electrode for substrate connection is formed on one surface of the insulating base material and a wiring layer and an electrode for IC chip connection are formed on the other surface with the electrode for substrate connection via connection. A method, comprising: providing a common measurement electrode via-connected to the wiring layer in an IC chip mounting area of the insulating base on the same surface as the substrate connection electrode, and providing the substrate connection electrode and the common measurement electrode A continuity inspection method for an interposer substrate, wherein a continuity state of the wiring layer is inspected by pressing a measurement inspection probe. 前記共通測定電極が少なくとも2個以上設けられていることを特徴とする請求項1記載のインターポーザ基板の導通検査方法。2. The method according to claim 1, wherein at least two common measurement electrodes are provided.
JP2002207870A 2002-07-17 2002-07-17 Interposer substrate continuity inspection method Expired - Fee Related JP4131137B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663019B1 (en) 2004-08-06 2006-12-28 가부시키가이샤 무라타 세이사쿠쇼 Electronic component production method and electronic component produced by the method
US8945953B2 (en) 2012-12-21 2015-02-03 Renesas Electronics Corporation Method of manufacturing semiconductor device
CN118299284A (en) * 2024-06-05 2024-07-05 湖南越摩先进半导体有限公司 Packaging test method utilizing wafer corner area

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663019B1 (en) 2004-08-06 2006-12-28 가부시키가이샤 무라타 세이사쿠쇼 Electronic component production method and electronic component produced by the method
US8945953B2 (en) 2012-12-21 2015-02-03 Renesas Electronics Corporation Method of manufacturing semiconductor device
US9230938B2 (en) 2012-12-21 2016-01-05 Renesas Electronics Corporation Method of manufacturing semiconductor device
CN118299284A (en) * 2024-06-05 2024-07-05 湖南越摩先进半导体有限公司 Packaging test method utilizing wafer corner area

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