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JP2004017251A - Pad conditioner for cmp processing - Google Patents

Pad conditioner for cmp processing Download PDF

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Publication number
JP2004017251A
JP2004017251A JP2002178832A JP2002178832A JP2004017251A JP 2004017251 A JP2004017251 A JP 2004017251A JP 2002178832 A JP2002178832 A JP 2002178832A JP 2002178832 A JP2002178832 A JP 2002178832A JP 2004017251 A JP2004017251 A JP 2004017251A
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JP
Japan
Prior art keywords
pad conditioner
base metal
dressing
polishing cloth
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002178832A
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Japanese (ja)
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JP3609067B2 (en
Inventor
Norio Imai
今井 憲生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
Original Assignee
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
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Priority to JP2002178832A priority Critical patent/JP3609067B2/en
Publication of JP2004017251A publication Critical patent/JP2004017251A/en
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To improve uniformity in a face of a pressing force of a pad conditioner to a polishing cloth, while maintaining a grinding rate equal to or more than that of a conventional pad conditioner. <P>SOLUTION: In this pad conditioner 10, after an abrasive coating layer 2 is formed on an action face 1a of a disc-like base metal 1 by an electrodeposition method, a swirl-like indentation groove 3 is formed by electric discharging. A gap 4 reaching to a rear face of the base metal is continuously formed to an indentation groove 2, and filled with soft resin 5. By a spring action of the base metal 1, a pressing force to a polishing cloth at the time of dressing is constantly dispersed to the entire action face, so as to make a degree of wear of the abrasive coating layer 2 and dressing of the polishing cloth uniform. At the time of dressing, a property for discharging chippings and slurry is improved. Local wear of the abrasive coating layer 2 is reduced, so as to improve a life of the pad conditioner 10. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、半導体LSIデバイスの平坦化に用いられるポリッシャのドレッシングに好適なCMP加工用パッドコンディショナーに関する。
【0002】
【従来の技術】
電子部品や光学部品の超精密、高品位仕上げのために行われるポリッシングは、ポリッシャの研磨布上に軟質砥粒を散布して被加工物を押し付けることにより実施され、軟質砥粒と被加工物間の化学的、機械的作用により材料除去が行われる。最近ではCMP(Chemical & Mechanical Polishing)と称される技術が注目を浴びている。このCMP加工装置としては、たとえば特開平7−297195号公報や特開平9−111117号公報に記載の装置がある。
【0003】
このようなCMP加工装置により半導体ウエハをポリッシングする場合、ポリッシャとしては一定の弾性率、繊維形状、形状パターンを持ったポリウレタン製の研磨布が使用される。ポリッシングは機械加工としては最終工程であり、平面度1μm前後、面粗度R10Åレベルが達成されなければならない。
【0004】
このようなポリッシング工程において、安定した加工性能を維持するためには研磨布表面の定期的修正が必要であり、パッドコンディショナーを使用してCMP加工と同時に、または定期的に研磨布表面の劣化層を除去するとともに、適正な面状態を得るようにしている。このパッドコンディショナーとしては、ダイヤモンド砥粒などを母材に固着したパッドコンディショナーが使用されている。
【0005】
図5の(a)は従来のパッドコンディショナーの一例としてホイールタイプのパッドコンディショナーを示す断面図であり、円盤状の台金41の作用面(側面)の外周部41aを一段高く盛り上げ、この外周部41aにダイヤモンド砥粒などを固着させた砥粒層42を形成したパッドコンディショナー40である。このパッドコンディショナー40を同図(b)に示すように保持具43で保持し、CMP加工装置のポリッシャ44表面の研磨布45に押し付けてドレッシングを行う。
【0006】
このようなパッドコンディショナー40では、砥粒層42の上面は平坦に形成されていたので、パッドコンディショナー40の押圧による研磨布45の変形により、砥粒層42の最外周部は研磨布45と線接触の状態となり、最外周部のみが早く摩耗してしまうという問題があった。この問題に対し、砥粒層の断面形状を凸型の円弧状曲面や山型としたパッドコンディショナーが提案されている。
【0007】
図6は特開平11−300600号公報で提案されているパッドコンディショナーであり、円盤状の台金51の側面の外周部51aを上面が円弧状曲面51bになるように盛り上げ、この円弧状曲面51bの上に砥粒層52を形成したものである。このような円弧状曲面51bを形成したことにより、砥粒層52の研磨布との接触が面接触となり、パッドコンディショナーの長寿命化をはかることができる、とされている。
【0008】
図7は特開平10−277919号公報で提案されているパッドコンディショナーであり、円盤状の台金61の側面の外周部61aに、上面の外周側61bおよび内周側61cが傾斜面で中間部61dが平坦面になるように砥粒層62を形成したものである。このような山型の砥粒層62としたことにより、縁部の砥粒の脱落を防止することができ、また研磨布を傷つけるおそれがない、とされている。
【0009】
【発明が解決しようとする課題】
ところで、上記公開公報に記載のパッドコンディショナーは、ドレッシング時にパッドコンディショナーを研磨布に押し付けたときに、その押圧力で研磨布が弾性により沈んだ状態で変形することを利用して、砥粒層の断面形状を凸型の円弧状曲面や山型とし、砥粒層が研磨布と面接触となるようにしたものである。
【0010】
しかし、砥粒層の断面形状を一定の凸型形状としたパッドコンディショナーでは、ドレッシング時にパッドコンディショナーを研磨布に押し付けたときに、常に砥粒層形成部分の全体が一定の力で研磨布に押し付けられ、一方研磨布はパッドコンディショナーと当接する面がすべて同じ沈んだ状態で変形するとは限らないので、研磨布の部分によってパッドコンディショナーの押圧力が異なり、パッドコンディショナーの砥粒層の摩耗や研磨布のドレッシングの程度にばらつきが生じる、という問題が残る。
【0011】
また、台金の精度(平面度・平行度)の良し悪しで研磨布への当たり面積が大きく左右され研磨布の部分によってドレッサの押圧力が異なり、ドレッサの砥粒層の摩耗や研磨布のドレッシングの程度にばらつきが生じる、という問題がある。
【0012】
本発明において解決すべき課題は、CMP加工による半導体ウエハなどの表面仕上げに用いる研磨布をドレッシングするためのパッドコンディショナーにおいて、従来のパッドコンディショナーと同等以上の削れレートを維持したうえで、研磨布に対するパッドコンディショナーの押圧力の面内均一性を高めることにある。
【0013】
【課題を解決するための手段】
本発明のCMP加工用パッドコンディショナーは、円盤状台金の作用面に渦巻き状の凹溝が設けられ、作用面の前記凹溝以外の部分に電着法により砥粒層が形成され、前記凹溝には台金裏面に達する間隙が連続的に形成されたパッドコンディショナーである。
【0014】
台金の作用面に渦巻き状の凹溝および間隙を設けたことにより、台金が渦巻き状に分離された状態になり、パッドコンディショナーを研磨布に押圧したときに台金にばね作用が発生する。このばね作用により、研磨布に対する押圧力は作用面全体に均一に分散され、パッドコンディショナーの砥粒層の摩耗や研磨布のドレッシングの程度が均一になる。また、凹溝の渦巻きの方向を台金の中心部から外周部に向けてパッドコンディショナー回転方向と逆方向とすることで、ドレッシング時の切粉やスラリーの排出性が良くなる。さらに、砥粒層の局部的な摩耗が軽減するので、パッドコンディショナーの寿命が向上する。
【0015】
ここで、前記凹溝の間隙に軟質樹脂を充填するのが望ましい。凹溝の間隙が開放されたままであると、この間隙に切粉が詰まって、間隙によって互いに分離した渦巻き状の作用面のばね作用が阻害されることになるので、間隙に切粉が詰まらないように軟質樹脂を充填する。充填する樹脂は、たとえばウレタン樹脂、合成ゴムのような弾性を有する軟質樹脂が適している。
【0016】
また、台金としてばね特性に優れた鋼を使用するのが望ましい。ばね特性に優れた鋼としては、SUP材やピアノ線などがあるが、台金の加工性や耐食性、防錆効果の点から、JIS G SUS630あるいはSUS631(析出硬化系ステンレス鋼)が最適である。SUS630あるいはSUS631は耐力が約750〜1175N/mmと高く、引っ張り強さ約930〜1310N/mmと高く、ばね特性にも優れている。
【0017】
本発明のパッドコンディショナーの製造は、円盤状台金の凹溝および間隙の形成工程以外は、従来公知のパッドコンディショナーの製造工程に準じて製造することができる。台金の凹溝および間隙は、台金の作用面に電着法により砥粒層を形成した後に、ワイヤー放電加工により砥粒層を含めた凹溝の加工および凹溝内の間隙加工を行う。
【0018】
【発明の実施の形態】
図1は本発明の実施形態におけるパッドコンディショナーの正面図、図2は図1のA−A線断面図、図3は図2の部分拡大図である。
【0019】
本実施形態におけるパッドコンディショナー10は、円盤状の台金1の作用面1aに電着法により砥粒層2を形成した後、放電加工により渦巻き状の凹溝3を形成し、さらに凹溝2に台金裏面に達する間隙4を連続的に形成して軟質樹脂5を充填したものである。
【0020】
台金1はSUS630製で、外径100mm、厚さ8.2mmである。台金1には、図1および図2に示すように、台金1の作用面1aに、台金1の中心部に近いところを始点として外周部に向けパッドコンディショナー回転方向(図中、矢印で示す)と逆方向に、渦巻き状の凹溝3を設けている。
【0021】
凹溝3は、溝幅5mm、深さ0.5mmで、溝幅の中心部に台金1の裏面に達する間隙4を形成している。間隙4の幅は0.3mmで、凹溝3の始点から終点まで連続的に形成され、間隙4内には軟質樹脂5としてウレタン樹脂が充填されている。
【0022】
砥粒層2は、図3に示すように、台金1の作用面1aの凹溝3を除く部分に、平均粒径0.15mmのダイヤモンド砥粒6が電着により一層固着されている。図3中の符号7はメッキ金属(Ni)層である。
【0023】
本実施形態のパッドコンディショナー10は以上のように構成されているので、台金1のばね作用により、ドレッシング時の研磨布に対する押圧力は作用面全体に均一に分散され、砥粒層2の摩耗や研磨布のドレッシングの程度が均一になる。また、ドレッシング時の切粉やスラリーの排出性が良くなる。さらに、砥粒層2の局部的な摩耗が軽減し、パッドコンディショナー10の寿命が向上する。
【0024】
〔試験例〕
図1に示した実施形態のパッドコンディショナー(発明品)と、凹溝と間隙を設けていない点を除いて図1に示したと同じ砥粒層を形成したパッドコンディショナー(比較品)と、外周部断面形状を特開平10−277919号公報に記載の形状(図7参照)としたパッドコンディショナー(従来品1)と、外周部断面形状を特開平11−300600号公報に記載の形状(図6参照)としたパッドコンディショナー(従来品2)を用いてドレッシング試験を行った。試験条件は以下の通りである。
使用機械:超精密片面ポリッシングマシン
研磨パッド:IC100SUBA400(発泡ポリウレタン)
パッドコンディショナー回転速度:40min−1
テーブル回転速度:30min−1
荷重:50N
加工時間:45時間
【0025】
試験結果を表1および図4に示す。
【表1】

Figure 2004017251
【0026】
表1において、表中の各特性値は従来品1の測定値を100としたときの指数で表している。ここで、削れレートはドレッシング時の1時間あたりの研磨布の削除量を指標とし、寿命は削れレートが下限値を下回ったときのパッドコンディショナーの使用時間を指標とし、加工精度は被加工材の加工精度を指標とした。表1からわかるように、台金にばね特性をもたせた発明品は、削れレートを維持したうえで、加工精度と寿命が大幅に向上している。
【0027】
図4は発明品と比較品について、ポリッシングマシンにおけるウエハのポリッシュレート(削れレートに同じ)、および研磨布に対するパッドコンディショナーの押圧力の面内均一性を示す図である。比較品は初期からウエハポリッシュレートが低下し始め、30時間経過時点で指数80に到達したが、発明品は初期からのウエハポリッシュレート低下が少なく徐々に低下し、45時間までウエハを加工することができた。押圧力の面内均一性は、発明品は比較品の2倍以上に向上している。
【0028】
【発明の効果】
台金の作用面に渦巻き状の凹溝および間隙を設けたことにより、台金にばね作用が発生し、このばね作用により、研磨布に対する押圧力は作用面全体に均一に分散され、パッドコンディショナーの砥粒層の摩耗や研磨布のドレッシングの程度が均一になる。また、ドレッシング時の切粉やスラリーの排出性が良くなり、さらに、砥粒層の局部的な摩耗が軽減するので、パッドコンディショナーの寿命が向上する。凹溝の間隙には、軟質樹脂を充填することによって、間隙に切粉が詰まらないようにすることができる。
【図面の簡単な説明】
【図1】本発明の実施形態におけるパッドコンディショナーの正面図である。
【図2】図1のA−A線断面図である。
【図3】図1に示すパッドコンディショナーの凹溝近傍の部分拡大図である。
【図4】試験結果を示す図である。
【図5】従来のパッドコンディショナーの一例とその使用状態を示す図である。
【図6】従来のパッドコンディショナーの改良例を示す図である。
【図7】従来のパッドコンディショナーの別の改良例を示す図である。
【符号の説明】
1 台金
1a 台金の作用面
2 砥粒層
3 凹溝
4 間隙
5 軟質樹脂
6 ダイヤモンド砥粒
7 メッキ金属層
10 パッドコンディショナー[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a pad conditioner for CMP processing suitable for dressing a polisher used for flattening a semiconductor LSI device.
[0002]
[Prior art]
Polishing for ultra-precision and high-quality finishing of electronic parts and optical parts is performed by spraying soft abrasive grains on the polishing cloth of the polisher and pressing the workpiece, and the soft abrasive grains and the workpiece Material removal is performed by chemical and mechanical action during the process. Recently, a technique called CMP (Chemical & Mechanical Polishing) has attracted attention. As the CMP processing apparatus, there are, for example, apparatuses described in JP-A-7-297195 and JP-A-9-111117.
[0003]
When a semiconductor wafer is polished by such a CMP processing apparatus, a polishing pad made of polyurethane having a certain elastic modulus, fiber shape and shape pattern is used as a polisher. Polishing is the final step in machining, and a flatness of about 1 μm and a surface roughness R Z of 10 ° must be achieved.
[0004]
In such a polishing process, it is necessary to periodically correct the polishing cloth surface in order to maintain stable processing performance. And an appropriate surface state is obtained. As this pad conditioner, a pad conditioner in which diamond abrasive grains or the like are fixed to a base material is used.
[0005]
FIG. 5A is a cross-sectional view showing a wheel-type pad conditioner as an example of a conventional pad conditioner. The outer peripheral portion 41a of the working surface (side surface) of the disc-shaped base 41 is raised one step higher. This is a pad conditioner 40 in which an abrasive grain layer 42 in which diamond abrasive grains and the like are fixed to 41a is formed. The pad conditioner 40 is held by a holder 43 as shown in FIG. 4B, and dressing is performed by pressing the pad conditioner 40 against a polishing cloth 45 on a surface of a polisher 44 of a CMP processing apparatus.
[0006]
In such a pad conditioner 40, since the upper surface of the abrasive layer 42 is formed flat, the outermost peripheral portion of the abrasive layer 42 is in line with the polishing cloth 45 due to the deformation of the abrasive cloth 45 due to the pressing of the pad conditioner 40. There is a problem that the contact state occurs and only the outermost peripheral portion is quickly worn. To solve this problem, a pad conditioner in which the cross-sectional shape of the abrasive layer is a convex arc-shaped curved surface or a mountain shape has been proposed.
[0007]
FIG. 6 shows a pad conditioner proposed in Japanese Patent Application Laid-Open No. 11-300600, in which an outer peripheral portion 51a of a side surface of a disk-shaped base metal 51 is raised so that the upper surface becomes an arc-shaped curved surface 51b, and the arc-shaped curved surface 51b is formed. And an abrasive layer 52 is formed thereon. By forming such an arcuate curved surface 51b, the contact of the abrasive layer 52 with the polishing cloth becomes a surface contact, and the life of the pad conditioner can be extended.
[0008]
FIG. 7 shows a pad conditioner proposed in Japanese Patent Application Laid-Open No. Hei 10-277919, in which an outer peripheral side 61b and an inner peripheral side 61c of an upper surface are inclined at an outer peripheral portion 61a on a side surface of a disk-shaped base 61. The abrasive layer 62 is formed so that 61d becomes a flat surface. It is described that the use of such a mountain-shaped abrasive layer 62 can prevent the abrasive grains from falling off at the edges and prevent the abrasive cloth from being damaged.
[0009]
[Problems to be solved by the invention]
By the way, the pad conditioner described in the above-mentioned publication discloses that, when the pad conditioner is pressed against the polishing cloth at the time of dressing, the polishing cloth is deformed in a state where the polishing cloth is elastically sunk by the pressing force. The cross-sectional shape is a convex arc-shaped curved surface or a mountain shape, and the abrasive layer is in surface contact with the polishing pad.
[0010]
However, with a pad conditioner in which the cross-sectional shape of the abrasive layer is constant and convex, when the pad conditioner is pressed against the polishing pad during dressing, the entire abrasive layer layer is always pressed against the polishing pad with a constant force. On the other hand, since the polishing cloth does not always deform in the same sunken state on the surface that comes into contact with the pad conditioner, the pressing force of the pad conditioner varies depending on the polishing cloth, and the abrasive layer of the pad conditioner wears and the polishing cloth However, there remains a problem that the degree of dressing varies.
[0011]
Also, the area of contact with the polishing cloth is greatly affected by the accuracy (flatness / parallelism) of the base metal, and the pressing force of the dresser varies depending on the polishing cloth, causing wear of the dresser's abrasive grain layer and the polishing cloth. There is a problem that the degree of dressing varies.
[0012]
The problem to be solved in the present invention is to provide a pad conditioner for dressing a polishing cloth used for surface finishing of a semiconductor wafer or the like by a CMP process, while maintaining a shaving rate equal to or higher than that of a conventional pad conditioner, It is to improve the in-plane uniformity of the pressing force of the pad conditioner.
[0013]
[Means for Solving the Problems]
In the pad conditioner for CMP processing according to the present invention, a spiral groove is provided on the working surface of the disk-shaped base metal, and an abrasive grain layer is formed by electrodeposition on a portion other than the groove on the working surface. The groove is a pad conditioner in which a gap reaching the back surface of the base metal is continuously formed.
[0014]
By providing a spiral concave groove and a gap on the working surface of the base metal, the base metal is in a spirally separated state, and a spring action is generated on the base metal when the pad conditioner is pressed against the polishing cloth. . Due to this spring action, the pressing force against the polishing cloth is uniformly distributed over the entire working surface, and the degree of wear of the abrasive grain layer of the pad conditioner and the degree of dressing of the polishing cloth become uniform. In addition, by making the direction of the spiral of the concave groove from the center of the base metal to the outer peripheral portion in the direction opposite to the rotation direction of the pad conditioner, the discharge of chips and slurry during dressing is improved. Furthermore, since the local wear of the abrasive layer is reduced, the life of the pad conditioner is improved.
[0015]
Here, it is desirable to fill the gap between the concave grooves with a soft resin. If the gap of the concave groove is left open, chips are clogged in the gap, and the spring action of the spiral working surfaces separated from each other is impeded by the gap, so the chips are not clogged in the gap. Is filled with a soft resin as described above. As the resin to be filled, a soft resin having elasticity such as urethane resin and synthetic rubber is suitable.
[0016]
Further, it is desirable to use steel excellent in spring characteristics as the base metal. Examples of steel having excellent spring properties include SUP material and piano wire, and JIS G SUS630 or SUS631 (precipitation hardened stainless steel) is most suitable from the viewpoints of workability, corrosion resistance, and rust prevention effect of the base metal. . SUS630 or SUS631 has a high yield strength of about 750 to 1175 N / mm 2 , a high tensile strength of about 930 to 1310 N / mm 2, and has excellent spring properties.
[0017]
The pad conditioner of the present invention can be manufactured according to a conventionally known manufacturing process of a pad conditioner, except for the step of forming the concave groove and the gap of the disk-shaped base metal. After forming the abrasive layer on the working surface of the base metal by the electrodeposition method, the groove and the gap of the base metal are subjected to the processing of the groove including the abrasive layer and the gap processing in the groove by wire electric discharge machining. .
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a front view of a pad conditioner according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line AA of FIG. 1, and FIG. 3 is a partially enlarged view of FIG.
[0019]
The pad conditioner 10 according to the present embodiment forms an abrasive layer 2 on the working surface 1a of a disk-shaped base metal 1 by an electrodeposition method, forms a spiral groove 3 by electric discharge machining, and further forms a groove 2 The gap 4 reaching the back surface of the base metal is continuously formed, and the soft resin 5 is filled.
[0020]
The base metal 1 is made of SUS630, and has an outer diameter of 100 mm and a thickness of 8.2 mm. As shown in FIGS. 1 and 2, the base 1 has a pad conditioner rotating direction (arrows in the drawings) on the working surface 1a of the base 1 starting from a position near the center of the base 1 and toward the outer periphery. The spiral groove 3 is provided in the direction opposite to the direction indicated by the arrow.
[0021]
The concave groove 3 has a groove width of 5 mm and a depth of 0.5 mm, and forms a gap 4 reaching the back surface of the base metal 1 at the center of the groove width. The gap 4 has a width of 0.3 mm, is formed continuously from the start point to the end point of the concave groove 3, and the gap 4 is filled with a urethane resin as a soft resin 5.
[0022]
As shown in FIG. 3, in the abrasive layer 2, diamond abrasive grains 6 having an average particle diameter of 0.15 mm are further fixed to the working surface 1a of the base metal 1 except for the concave grooves 3 by electrodeposition. Reference numeral 7 in FIG. 3 denotes a plated metal (Ni) layer.
[0023]
Since the pad conditioner 10 of the present embodiment is configured as described above, the pressing force against the polishing pad during dressing is uniformly distributed over the entire working surface by the spring action of the base metal 1, and the abrasive layer 2 is worn. And the degree of dressing of the polishing cloth becomes uniform. In addition, the discharge of chips and slurry during dressing is improved. Further, local wear of the abrasive layer 2 is reduced, and the life of the pad conditioner 10 is improved.
[0024]
(Test example)
A pad conditioner (comparative product) of the embodiment shown in FIG. 1, a pad conditioner (comparative product) in which the same abrasive layer as shown in FIG. 1 is formed except that no concave groove and no gap are provided, and an outer peripheral portion A pad conditioner (conventional product 1) having a cross-sectional shape described in JP-A-10-277919 (see FIG. 7), and an outer peripheral cross-sectional shape described in JP-A-11-300600 (see FIG. 6) )), A dressing test was performed using a pad conditioner (conventional product 2). The test conditions are as follows.
Machine used: Ultra-precision single-side polishing machine Polishing pad: IC100SUBA400 (polyurethane foam)
Pad conditioner rotation speed: 40 min -1
Table rotation speed: 30 min -1
Load: 50N
Processing time: 45 hours
The test results are shown in Table 1 and FIG.
[Table 1]
Figure 2004017251
[0026]
In Table 1, each characteristic value in the table is represented by an index when the measured value of Conventional Product 1 is set to 100. Here, the scraping rate is the index of the amount of abrasive cloth removed per hour at the time of dressing, the service life is the index of the use time of the pad conditioner when the scraping rate falls below the lower limit, and the processing accuracy is the processing material. Processing accuracy was used as an index. As can be seen from Table 1, the invention in which the base metal is provided with the spring characteristic has significantly improved machining accuracy and life while maintaining the scraping rate.
[0027]
FIG. 4 is a view showing the in-plane uniformity of the polishing rate (same as the scraping rate) of the wafer in the polishing machine and the pressing force of the pad conditioner against the polishing cloth for the invention product and the comparative product. The wafer polish rate of the comparative product began to decrease from the beginning, and reached an index of 80 after 30 hours. However, the invention product had a small decrease in the wafer polish rate from the initial stage and gradually decreased, and the wafer was processed up to 45 hours. Was completed. The in-plane uniformity of the pressing force of the invention product is more than twice that of the comparative product.
[0028]
【The invention's effect】
By providing a spiral groove and a gap on the working surface of the base metal, a spring action is generated on the base metal, and by this spring action, the pressing force against the polishing pad is evenly distributed over the entire working surface, and the pad conditioner The degree of wear of the abrasive layer and the degree of dressing of the polishing pad become uniform. In addition, the dischargeability of chips and slurry during dressing is improved, and the local wear of the abrasive layer is reduced, so that the life of the pad conditioner is improved. By filling a soft resin into the gap between the concave grooves, it is possible to prevent chips from clogging the gap.
[Brief description of the drawings]
FIG. 1 is a front view of a pad conditioner according to an embodiment of the present invention.
FIG. 2 is a sectional view taken along line AA of FIG.
FIG. 3 is a partially enlarged view of the vicinity of a concave groove of the pad conditioner shown in FIG. 1;
FIG. 4 is a diagram showing test results.
FIG. 5 is a diagram showing an example of a conventional pad conditioner and its use state.
FIG. 6 is a diagram showing an improved example of a conventional pad conditioner.
FIG. 7 is a view showing another improved example of the conventional pad conditioner.
[Explanation of symbols]
Reference Signs List 1 base metal 1a base metal working surface 2 abrasive layer 3 concave groove 4 gap 5 soft resin 6 diamond abrasive 7 plated metal layer 10 pad conditioner

Claims (2)

円盤状台金の作用面に渦巻き状の凹溝が設けられ、作用面の前記凹溝以外の部分に電着法により砥粒層が形成され、前記凹溝には台金裏面に達する間隙が連続的に形成されたCMP加工用パッドコンディショナー。A spiral groove is provided on the working surface of the disk-shaped base metal, an abrasive layer is formed by electrodeposition on a portion of the working surface other than the groove, and a gap reaching the back surface of the base metal is formed in the groove. Pad conditioner for CMP processing formed continuously. 前記凹溝の間隙に軟質樹脂が充填された請求項1記載のCMP加工用パッドコンディショナー。2. The pad conditioner for CMP processing according to claim 1, wherein a soft resin is filled in a gap between the concave grooves.
JP2002178832A 2002-06-19 2002-06-19 Pad conditioner for CMP processing Expired - Fee Related JP3609067B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009066717A (en) * 2007-09-14 2009-04-02 Nitta Haas Inc Gap filler for polishing pad and method for filling the same
CN113183023A (en) * 2021-05-14 2021-07-30 嘉兴星微纳米科技有限公司 Semiconductor wafer grinding equipment

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CN109514394B (en) * 2019-01-14 2020-05-19 桐乡市倍特科技有限公司 Conveniently change hydrologic cycle spiral-flow light decorations machine of abrasive material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009066717A (en) * 2007-09-14 2009-04-02 Nitta Haas Inc Gap filler for polishing pad and method for filling the same
CN113183023A (en) * 2021-05-14 2021-07-30 嘉兴星微纳米科技有限公司 Semiconductor wafer grinding equipment
CN113183023B (en) * 2021-05-14 2022-06-17 嘉兴星微纳米科技有限公司 Semiconductor wafer grinding equipment

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