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JP2003347896A - Surface acoustic wave filter - Google Patents

Surface acoustic wave filter

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Publication number
JP2003347896A
JP2003347896A JP2002156718A JP2002156718A JP2003347896A JP 2003347896 A JP2003347896 A JP 2003347896A JP 2002156718 A JP2002156718 A JP 2002156718A JP 2002156718 A JP2002156718 A JP 2002156718A JP 2003347896 A JP2003347896 A JP 2003347896A
Authority
JP
Japan
Prior art keywords
filter
acoustic wave
resonance frequency
surface acoustic
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002156718A
Other languages
Japanese (ja)
Inventor
Akinori Yamada
明法 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP2002156718A priority Critical patent/JP2003347896A/en
Publication of JP2003347896A publication Critical patent/JP2003347896A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a means for improving deterioration in attenuation, to solve the problem there is a frequency region, where the attenuation is deteriorated in a low pass side of the neighborhood of the passband in a longitudinally- coupled multi-mode SAW (surface acoustic wave) filter using reflection inverted type IDT (interdigital transducer) electrodes. <P>SOLUTION: A longitudinally-coupled multi-mode SAW filter provided with a plurality of reflection inverted type IDT electrodes on a piezoelectric substrate and reflectors on both the sides thereof, and an SAW rosonator provided with IDT electrodes on the same substrate and reflectors on both the sides of the IDT electrodes are connected in series. A resonance frequency fs and an antiresonance frequency fa of a composite resonator in which an electric element is connected to the SAW resonator in series are made to meet the relation of fa<fs, and the antiresonance frequency fa is set in the frequency region of the deterioration in attenuation occuring in the low pass side of the neighborhood of the passband in a longitudinally-coupled multi-mode SAW filter. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は弾性表面波フィルタ
(以下、SAWフィルタと称す)に関し、特にIDT電
極に反射反転型IDT電極を用いた縦結合多重モードS
AWフィルタの通過帯域近傍の低域側に生じる減衰量劣
化を改善した弾性表面波フィルタに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave filter (hereinafter, referred to as a SAW filter), and more particularly, to a longitudinally coupled multiple mode S using a reflection inversion type IDT electrode as an IDT electrode.
The present invention relates to a surface acoustic wave filter in which attenuation deterioration that occurs on a low frequency side near the pass band of an AW filter is improved.

【0002】[0002]

【従来の技術】近年、SAWフィルタは通信分野で広く
利用され、高性能、小型、量産性等の優れた特徴を有す
ることから特に携帯電話機等に多く用いられている。そ
の中でも共振子型SAWフィルタは挿入損失が小さいこ
とから、RFフィルタとして多く用いられている。図6
(a)は共振子型SAWフィルタの一種で、1次と3次
の縦モードを利用した1次−3次縦結合二重モードSA
Wフィルタ(以下、二重モードSAWフィルタと称す)
の構成を示す平面図である。即ち、圧電基板21の主表
面上に表面波の伝搬方向に沿って3つのIDT電極2
2、23、24を近接して配置すると共に、これらのI
DT電極22、23、24の両側にグレーティング反射
器(以下、反射器と称す)25a、25bを配設する。
IDT電極22、23、24はそれぞれ互いに間挿し合
う複数の電極指を有する一対のくし形電極よりなり、中
央IDT電極22の一方のくし形電極は入力端子INに
ワイヤボンディング等の手段を用いて接続され、他方の
くし形電極は接地される。更に、両外側のIDT電極2
3、24の、図中下方にあるくし形電極同士を短絡して
出力端子OUTに接続し、他方のくし形電極はそれぞれ
接地して二重モードSAWフィルタを構成する。
2. Description of the Related Art In recent years, SAW filters have been widely used in the field of communications, and have been used particularly in portable telephones and the like because of their excellent characteristics such as high performance, small size, and mass productivity. Among them, resonator-type SAW filters are often used as RF filters because of their low insertion loss. FIG.
(A) is a kind of resonator type SAW filter, which is a primary-tertiary third-order longitudinally coupled double mode SA using first- and third-order longitudinal modes.
W filter (hereinafter referred to as dual mode SAW filter)
It is a top view which shows the structure of. That is, three IDT electrodes 2 are formed on the main surface of the piezoelectric substrate 21 along the propagation direction of the surface wave.
2, 23, 24 in close proximity and their I
Grating reflectors (hereinafter, referred to as reflectors) 25a, 25b are provided on both sides of the DT electrodes 22, 23, 24.
Each of the IDT electrodes 22, 23, and 24 is composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interposed therebetween. One of the comb-shaped electrodes of the central IDT electrode 22 is connected to the input terminal IN by means such as wire bonding. Connected and the other comb electrode is grounded. Furthermore, both outer IDT electrodes 2
The comb electrodes 3, 24 at the bottom in the figure are short-circuited to each other and connected to the output terminal OUT, and the other comb electrodes are grounded to form a dual mode SAW filter.

【0003】周知のように、二重モードSAWフィルタ
の中心周波数は、表面波の伝搬速度Vに比例し、IDT
電極22、23、24の電極周期λに反比例する。そし
て、二重モードSAWフィルタの通過帯域幅は縦1次モ
ードの共振周波数f1と、縦3次モードの共振周波数f
3との差(f1−f3)に比例し、そのインピーダンス
は電極指対数、交叉長等に依存する。また、通過帯域幅
を拡大する手段として中央IDT電極22の最外側の電
極指を幅広とすることが一般的に行われている。
As is well known, the center frequency of a dual mode SAW filter is proportional to the propagation velocity V of a surface wave, and
It is inversely proportional to the electrode period λ of the electrodes 22, 23, 24. The pass band width of the dual mode SAW filter has a resonance frequency f1 of the vertical first mode and a resonance frequency f of the vertical third mode.
The impedance is proportional to the difference (f1−f3) from 3 and its impedance depends on the number of electrode finger pairs, cross length, and the like. Also, as a means for expanding the pass band, it is common practice to widen the outermost electrode finger of the central IDT electrode 22.

【0004】図6(b)は同図(a)に示すように、I
DT電極22、23、24として正規型IDT電極を用
いた二重モードSAWフィルタの通過域近傍のフィルタ
特性を示す概略図で、通過域近傍の高域側のQで示す周
波数領域において、減衰量劣化が本質的に生じる。領域
Qの減衰量劣化を改善するため、図7に平面図を示すよ
うに、図6(a)に示した二重モードSAWフィルタF
を形成すると共に、同一圧電基板21上にIDT電極2
6と、その両側に反射器27a、28bを配置してSA
W共振子Rを形成し、これらを直列接続したSAWフィ
ルタが実用化されている。
FIG. 6 (b) shows an I
FIG. 4 is a schematic diagram showing filter characteristics in the vicinity of a pass band of a dual mode SAW filter using normal type IDT electrodes as DT electrodes 22, 23, and 24. Deterioration occurs essentially. As shown in the plan view of FIG. 7, the dual mode SAW filter F shown in FIG.
And an IDT electrode 2 on the same piezoelectric substrate 21.
6 and reflectors 27a, 28b on both sides
A SAW filter in which W resonators R are formed and these are connected in series has been put to practical use.

【0005】図8は周波数領域Qの減衰量が改善される
理由を説明する図であって、二重モードSAWフィルタ
Fの通過域特性と、SAW共振子Rのリアクタンス特性
とを、周波数軸を共通にして重ね書きした図である。S
AW共振子Rの共振周波数fsを二重モードSAWフィ
ルタFの通過帯域内に、反共振周波数faを周波数領域
Qに設定することにより、反共振周波数faでは高周波
電流が大幅に減少するために領域Qの減衰量劣化を補償
し、減衰量を改善することができる。一方、通過域では
共振周波数fsが設定されているために、通過帯域の挿
入損失はほとんど影響を受けないことになる。
FIG. 8 is a diagram for explaining the reason why the attenuation in the frequency region Q is improved. The passband characteristic of the dual mode SAW filter F and the reactance characteristic of the SAW resonator R are plotted on the frequency axis. It is a figure which was made to be common and overwritten. S
By setting the resonance frequency fs of the AW resonator R within the pass band of the dual mode SAW filter F and setting the anti-resonance frequency fa in the frequency region Q, the high-frequency current is greatly reduced at the anti-resonance frequency fa. The attenuation of Q can be compensated for and the attenuation can be improved. On the other hand, since the resonance frequency fs is set in the pass band, the insertion loss in the pass band is hardly affected.

【0006】図9は正規型IDT電極22、23、24
に代えて、反射変転型のIDT電極32、33、34を
用いて形成した二重モードSAWフィルタF2と、同一
圧電基板上に正規型IDT電極36とその両側に反射器
37a、37bと配置して形成したSAW共振子R2と
を直列接続して構成したSAWフィルタを示す概略平面
図である。反射反転型のIDT電極を用いた二重モード
SAWフィルタF2の通過域近傍のフィルタ特性は、図
10のF2で示すように通過帯域近傍の低域側に減衰量
劣化の領域Pが本質的に生じる。
FIG. 9 shows regular IDT electrodes 22, 23 and 24.
In place of the above, a dual mode SAW filter F2 formed using reflection inversion type IDT electrodes 32, 33 and 34, a regular type IDT electrode 36 on the same piezoelectric substrate and reflectors 37a and 37b on both sides thereof are arranged. FIG. 7 is a schematic plan view showing a SAW filter configured by connecting a SAW resonator R2 formed in series with the SAW resonator. The filter characteristic in the vicinity of the pass band of the dual mode SAW filter F2 using the reflection inversion type IDT electrode has a region P in which the attenuation is deteriorated in the lower band near the pass band as shown by F2 in FIG. Occurs.

【0007】ここで、反射変転型IDT電極について説
明する。反射反転型電極に関しては、先行する特許出願
(特願平10−023918号)にて詳細に説明しているので、
ここでは簡単に説明する。反射反転型IDT電極は、図
11(a)に示すように、幅員W1の第1の電極指18
と、図中右方に間隙g1をおいて幅員W2の第2の電極
指19と、図中右方に間隙g2をおいて幅員W3の第3
の電極指20と、電極指18と20の両側の(g3)/2のス
ペースから成る単位区間、即ち一波長λ当たり3本の電
極指で構成される単位区間を圧電基板上に繰り返し配列
したものである。さらに、第1の電極指18の幅員W1と
第3の電極指20の幅員W3とをW1=W3とし、第1の
電極指18と第2の電極指19との間隙g1と、第2の電極
指19と第3の電極指20との間隙g2とをg1=g2とす
る。そして、電極指18と20とを電極指19と逆相にて駆動
する。
Here, the reflection inversion type IDT electrode will be described. The reflection inversion type electrode has been described in detail in the preceding patent application (Japanese Patent Application No. 10-023918).
Here, a brief description will be given. As shown in FIG. 11A, the reflection inversion type IDT electrode has a first electrode finger 18 having a width W1.
And the second electrode finger 19 having a width W2 with a gap g1 to the right in the figure, and a third electrode finger W3 having a gap g2 with a gap g2 to the right in the figure.
Of the electrode finger 20 and a unit section composed of a space of (g3) / 2 on both sides of the electrode fingers 18 and 20, that is, a unit section composed of three electrode fingers per wavelength λ is repeatedly arranged on the piezoelectric substrate. Things. Further, the width W1 of the first electrode finger 18 and the width W3 of the third electrode finger 20 are set to W1 = W3, the gap g1 between the first electrode finger 18 and the second electrode finger 19, and the second The gap g2 between the electrode finger 19 and the third electrode finger 20 is defined as g1 = g2. Then, the electrode fingers 18 and 20 are driven in the opposite phase to the electrode finger 19.

【0008】図11(b)は同図(a)のA−Aにおけ
る断面図であり、くし形電極に高周波電圧を印加してI
DT電極を駆動した場合のある瞬間の表面電位を示した
ものである。電位は第2の電極指19に対して左右対称で
あり、励振中心は第2の電極指19の中央となることが分
かる。次のように、一波長λに3本の電極指を用いたI
DT電極の単位区間当たりの反射係数Γ1(反射ベクト
ル)を求める。図12(a)に示すようにIDT電極の
任意の1区間、即ち、電極指18〜20の各両端の6つのエ
ッジ面E1〜E6からの短絡条件における反射ベクトル
E1〜E6(Ei(i=1〜6)はエッジ面を示すと同時
にそのエッジからの反射ベクトルも示すものとする)を
求めてみると、図12(b)に示すように6つの反射ベ
クトルE1〜E6が求まる。この場合、正規型IDT電
極がその励振中心である電極指の中央を規準とするよう
に、図12(a)に示す第2の電極指19の中央を反射の
基準とし、その位置での反射係数を図示している。これ
ら反射ベクトルE1〜E6の合成ベクトルは、図12
(b)に示すように反射ベクトルГ1となる。
FIG. 11B is a cross-sectional view taken along line AA of FIG. 11A.
This shows the surface potential at a certain moment when the DT electrode is driven. It can be seen that the potential is symmetric with respect to the second electrode finger 19, and the center of excitation is at the center of the second electrode finger 19. As shown below, I using three electrode fingers for one wavelength λ
A reflection coefficient Γ1 (reflection vector) per unit section of the DT electrode is obtained. As shown in FIG. 12A, the reflection vectors E1 to E6 (Ei (i = i = i) in an arbitrary section of the IDT electrode, that is, short-circuit conditions from the six edge surfaces E1 to E6 at both ends of the electrode fingers 18 to 20 1 to 6) indicate an edge surface and also indicate a reflection vector from the edge), and six reflection vectors E1 to E6 are obtained as shown in FIG. In this case, the center of the second electrode finger 19 shown in FIG. 12A is used as a reference for reflection so that the normal type IDT electrode uses the center of the electrode finger as the excitation center as a reference, and the reflection at that position is used. The coefficient is illustrated. The composite vector of these reflection vectors E1 to E6 is shown in FIG.
As shown in (b), the reflection vector becomes Г1.

【0009】励振中心を基準とした反射ベクトルГ1
は、正規型IDT電極の反射ベクトル(電極指の中央に
おいて、−π/2)とは異なり、π/2の位相を示して
いる。従って、両者の位相はπだけ異なることなる。反
射係数の位相回転は波の往復が寄与するため、その位相
の半分だけ反射面が移動したことに相当する。すなわち
正規型と比べて反射中心がλ/4だけ異なることにな
る。
The reflection vector Г1 with respect to the excitation center
Represents a phase of π / 2, which is different from the reflection vector of the regular IDT electrode (−π / 2 at the center of the electrode finger). Therefore, the phases of the two differ by π. Since the phase rotation of the reflection coefficient contributes to the reciprocation of the wave, it corresponds to a movement of the reflection surface by half of the phase. That is, the reflection center differs from the normal type by λ / 4.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、図9に
示したような反射反転型IDT電極を用いて二重モード
SAWフィルタF2を形成すると共に、同一圧電基板上
に正規型IDT電極を用いたSAW共振子R2を形成
し、これらを直列接続して構成したSAWフィルタの通
過域近傍のフィルタ特性には次のような問題があった。
即ち、周波数領域Pの減衰量劣化を改善するために、S
AW共振子R2の反共振周波数faを領域Pに設定する
と、共振周波数fsはさらに低域側に位置することにな
る。そして、二重モードSAWフィルタF2の通過帯域
においては、SAW共振子R2のリアクタンスは容量性
となるために、領域Pの減衰量劣化は改善されるもの
の、SAWフィルタの通過域の挿入損失は逆に劣化する
という問題があった。本発明は上記問題を解決するため
になされたものであって、反射反転型IDT電極を用い
た二重モードSAWフィルタの減衰量の劣化を補償する
と共に、挿入損失の小さなSAWフィルタを提供するこ
とを目的とする。
However, the dual mode SAW filter F2 is formed using the reflection inversion type IDT electrode as shown in FIG. 9, and the SAW filter using the normal type IDT electrode on the same piezoelectric substrate. The SAW filter formed by forming the resonators R2 and connecting them in series has the following problems in the filter characteristics near the pass band.
That is, in order to improve the deterioration of the attenuation in the frequency domain P, S
When the anti-resonance frequency fa of the AW resonator R2 is set in the region P, the resonance frequency fs is located on the lower frequency side. In the pass band of the dual mode SAW filter F2, the reactance of the SAW resonator R2 becomes capacitive, so that the attenuation loss in the region P is improved, but the insertion loss in the pass band of the SAW filter is reversed. However, there was a problem of deterioration. SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and it is an object of the present invention to provide a SAW filter that compensates for deterioration of the attenuation of a dual mode SAW filter using a reflection inversion type IDT electrode and has a small insertion loss. With the goal.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するため
に本発明に係る弾性表面波フィルタの請求項1記載の発
明は、圧電基板の主面上に表面波の伝搬方向に沿って複
数の反射反転型IDT電極とこれらの両側にグレーティ
ング反射器とを備えた縦結合多重モードSAWフィルタ
と、正規型IDT電極と該IDT電極の両側にグレーテ
ィング反射器を同一圧電基板上に配置した弾性表面波共
振子に負性容量素子Xを並列接続した複合共振子とを直
列接続した弾性表面波フィルタであって、前記複合共振
子の共振周波数fs及び反共振周波数faがfa<fs
であり、反共振周波数faが前記縦結合多重モードSA
Wフィルタの通過域近傍の低域側に生じる減衰量劣化の
周波数領域内に、共振周波数fsが通過域内に設定され
ていることを特徴とする弾性表面波フィルタである。請
求項2記載の発明は、圧電基板の主面上に表面波の伝搬
方向に沿って複数の反射反転型IDT電極とこれらの両
側にグレーティング反射器とを備えた縦結合多重モード
SAWフィルタと、正規型IDT電極と該IDT電極の
両側にグレーティング反射器を同一圧電基板上に配置し
た弾性表面波共振子に負性容量素子Xを直列接続した複
合共振子とを直列接続した弾性表面波フィルタであっ
て、前記複合共振子の共振周波数fs及び反共振周波数
faがfa<fsであり、反共振周波数faが前記縦結
合多重モードSAWフィルタの通過域近傍の低域側に生
じる減衰量劣化の周波数領域内に、共振周波数fsが通
過域内に設定されていることを特徴とする弾性表面波フ
ィルタである。請求項3記載の発明は、前記負性容量素
子Xがインダクタンスであることを特徴とする請求項1
あるいは2に記載の弾性表面波フィルタである。請求項
4記載の発明は、前記負性容量素子Xがオペアンプと抵
抗と容量とにより構成した回路であることを特徴とする
請求項1あるいは2に記載の弾性表面波フィルタであ
る。請求項5記載の発明は、前記縦結合多重モードSA
Wフィルタが1次−2次縦結合二重モードSAWフィル
タであることを特徴とする請求項1乃至4のいずれかに
記載の弾性表面波フィルタである。請求項6記載の発明
は、前記縦結合多重モードSAWフィルタが1次−3次
縦結合二重モードSAWフィルタであることを特徴とす
る請求項1乃至4のいずれかにに記載の弾性表面波フィ
ルタである。
According to a first aspect of the present invention, there is provided a surface acoustic wave filter according to the present invention, wherein a plurality of surface acoustic wave filters are provided on a main surface of a piezoelectric substrate along a propagation direction of a surface acoustic wave. A longitudinally coupled multi-mode SAW filter having a reflection inversion type IDT electrode and grating reflectors on both sides thereof, and a surface acoustic wave in which a regular type IDT electrode and grating reflectors are arranged on both sides of the IDT electrode on the same piezoelectric substrate. A surface acoustic wave filter in which a composite resonator in which a negative capacitance element X is connected in parallel to a resonator is connected in series, wherein the resonance frequency fs and the antiresonance frequency fa of the composite resonator are fa <fs.
And the anti-resonance frequency fa is equal to the longitudinal coupling multiple mode SA.
The surface acoustic wave filter is characterized in that the resonance frequency fs is set in the pass band within the frequency range of attenuation deterioration occurring on the low band side near the pass band of the W filter. A longitudinally coupled multi-mode SAW filter comprising a plurality of reflection inversion type IDT electrodes on a main surface of a piezoelectric substrate along a propagation direction of a surface acoustic wave and grating reflectors on both sides thereof, A surface acoustic wave filter in which a regular type IDT electrode and a composite resonator in which a negative reflector X is connected in series to a surface acoustic wave resonator in which grating reflectors are arranged on the same piezoelectric substrate on both sides of the IDT electrode are connected in series. The resonance frequency fs and the anti-resonance frequency fa of the composite resonator are fa <fs, and the anti-resonance frequency fa is a frequency of attenuation deterioration occurring on a low frequency side near the pass band of the longitudinally coupled multimode SAW filter. A surface acoustic wave filter characterized in that a resonance frequency fs is set in a pass band in a region. The invention according to claim 3 is characterized in that the negative capacitance element X is an inductance.
Alternatively, the surface acoustic wave filter according to item 2. The invention according to claim 4 is the surface acoustic wave filter according to claim 1 or 2, wherein the negative capacitance element X is a circuit constituted by an operational amplifier, a resistor, and a capacitor. The invention according to claim 5 is characterized in that the longitudinally coupled multimode SA
The surface acoustic wave filter according to any one of claims 1 to 4, wherein the W filter is a primary-secondary longitudinally coupled dual mode SAW filter. The surface acoustic wave according to any one of claims 1 to 4, wherein the longitudinally coupled multimode SAW filter is a first-order to third-order longitudinally coupled dual-mode SAW filter. Filter.

【0012】[0012]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1は本発明の実施の
形態に係るSAWフィルタの構成を示す概略平面図であ
って、圧電基板(図示しない)の主表面上に表面波の伝
搬方向に沿って3つの反射反転型IDT電極1、2、3
を近接して配置すると共に、これらの反射反転型IDT
電極1、2、3の両側に反射器4a、4bを配設して、
反射反転型の二重モードSAWフィルタFを形成する。
更に、該二重モードSAWフィルタFに平行して、正規
型IDT電極5とその両側に反射器6a、6bとを配置
してSAW共振子Rを形成する。そして、二重モードS
AWフィルタFにおける中央IDT電極1の一方のくし
形電極は入力端子INに接続され、他方のくし形電極は
接地される。更に、二重モードSAWフィルタFの両外
側のIDT電極2、3の、図中上方にあるくし形電極を
それぞれ接地すると共に、図中下方にあるくし形電極同
士を同一圧電基板上に形成したリード電極にて短絡し、
該リード電極とSAW共振子Rの図中上方にあるIDT
電極のくし形電極とを接続し、SAW共振子Rの他方の
くし形電極と出力端子OUTとを接続する。そして、S
AW共振子Rのそれぞれのくし形電極のバスバーに負性
容量を呈する電気素子(負性容量素子)Xを並列接続し
てSAWフィルタを構成する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1 is a schematic plan view showing a configuration of a SAW filter according to an embodiment of the present invention, in which three reflection inversion type IDT electrodes are provided on a main surface of a piezoelectric substrate (not shown) along a propagation direction of a surface wave. 1, 2, 3
Are arranged close to each other, and these reflection inversion type IDTs
Reflectors 4a, 4b are arranged on both sides of the electrodes 1, 2, 3,
The reflection inversion type dual mode SAW filter F is formed.
Further, a normal type IDT electrode 5 and reflectors 6a and 6b on both sides thereof are arranged in parallel with the dual mode SAW filter F to form a SAW resonator R. And the dual mode S
One comb electrode of the center IDT electrode 1 in the AW filter F is connected to the input terminal IN, and the other comb electrode is grounded. Further, the IDT electrodes 2 and 3 on both outer sides of the dual mode SAW filter F were grounded at the upper comb electrodes in the figure, and the lower comb electrodes were formed on the same piezoelectric substrate. Short-circuit with the lead electrode,
IDT above the lead electrode and SAW resonator R in the figure
The comb electrode of the electrode is connected, and the other comb electrode of the SAW resonator R is connected to the output terminal OUT. And S
An electric element (negative capacitance element) X exhibiting a negative capacitance is connected in parallel to the bus bar of each comb-shaped electrode of the AW resonator R to form a SAW filter.

【0013】本発明の特徴は3つの反射反転型IDT電
極を備えた二重モードSAWフィルタFにSAW共振子
Rを直列接続した上で、該SAW共振子に負性容量素子
Xを並列接続して構成したものである。ここで、SAW
共振子Rに負性容量素子Xを並列接続した電気的等価回
路を考察する。SAW共振子Rの電気的等価回路は、図
2(a)のαで示すようにL1、C1、R1からなる直
列共振回路に、容量Cdが並列接続された電気的等価回
路で表される。この電気的等価回路に負性容量素子Xが
並列接続されると図2(a)のように表される。
A feature of the present invention is that a SAW resonator R is connected in series to a dual mode SAW filter F having three reflection inversion type IDT electrodes, and a negative capacitance element X is connected in parallel to the SAW resonator. It is configured. Where SAW
Consider an electrical equivalent circuit in which a negative capacitance element X is connected in parallel to a resonator R. The electric equivalent circuit of the SAW resonator R is represented by an electric equivalent circuit in which a capacitance Cd is connected in parallel to a series resonance circuit composed of L1, C1, and R1 as indicated by α in FIG. When a negative capacitance element X is connected in parallel to this electrical equivalent circuit, it is represented as shown in FIG.

【0014】負性容量素子Xとして図2(b)に示すよ
うにインダクタンスLを用いると、該インダクタンス
は周波数ω近傍では負性容量−C=−1/(ω
)と等価となり、SAW共振子Rにインダクタンス
を並列接続したものの電気的等価回路は、同図
(c)のように表される。ここでインダクタンスのL
の値をC>Cdを満たすように設定すると、そのリア
クタンス曲線は図2(d)に示すように反共振周波数f
aを共振周波数fsより低い周波数に設定することがで
きる。
[0014] With the inductance L 0 as shown in FIG. 2 (b) as a negative capacitance element X, the inductance L 0 negative capacitance -C near frequency omega is 0 = -1 / (ω 2
L 0 ), and an electrical equivalent circuit of the SAW resonator R in which the inductance L 0 is connected in parallel is represented as shown in FIG. Where L 0 of the inductance
Is set so as to satisfy C 0 > Cd, the reactance curve becomes the anti-resonance frequency f as shown in FIG.
a can be set to a frequency lower than the resonance frequency fs.

【0015】図3は本発明に係るSAWフィルタのフィ
ルタ特性を説明する図であって、反射反転型の二重モー
ドSAWフィルタにおける通過帯域近傍の低域側の周波
数領域Pに生ずる減衰劣化が改善される理由を説明する
図である。即ち、反射反転型二重モードSAWフィルタ
Fの通過帯域近傍のフィルタ特性Fと、SAW共振子R
に負性容量素子Xを並列接続した、複合共振子のリアク
タンス特性とを周波数軸を同一にして重ね書きした図で
ある。複合共振子の反共振周波数faを領域Pに、その
共振周波数fsを通過域内に設定すると、複合共振子の
反共振周波数近傍では高周波電流は阻止されるので、周
波数領域Pの減衰量は大きくなり、減衰量劣化は補償さ
れる。一方、通過帯域内に共振周波数fsを設定したの
で、通過域内の挿入損失への影響は極めて小さく抑える
ことができる。
FIG. 3 is a diagram for explaining the filter characteristics of the SAW filter according to the present invention. In the reflection inversion type double mode SAW filter, the attenuation deterioration occurring in the lower frequency region P near the pass band is improved. It is a figure explaining the reason why it is done. That is, the filter characteristic F near the pass band of the reflection inversion type double mode SAW filter F and the SAW resonator R
FIG. 7 is a diagram in which the reactance characteristics of a composite resonator in which a negative capacitance element X is connected in parallel to the above are superimposed with the same frequency axis. When the anti-resonance frequency fa of the composite resonator is set in the region P and the resonance frequency fs is set in the pass band, the high-frequency current is blocked near the anti-resonance frequency of the composite resonator, so that the attenuation in the frequency region P increases. , The deterioration of the attenuation is compensated. On the other hand, since the resonance frequency fs is set in the pass band, the influence on the insertion loss in the pass band can be extremely suppressed.

【0016】図4(a)はSAW共振子Rと負性容量素
子Xとを直列接続して、複合共振子を構成した場合であ
る。負性容量素子XにインダクタンスL’を用いる
と、該インダクタンスL’は周波数ω近傍では負性容
量−C’=−1/(ωL’ )と等価となり、SA
W共振子RにインダクタンスL’を直列接続した複合
共振子のリアクタンス曲線は、同図(b)のように表さ
れる。この場合、C’を0<C’<Cdの範囲にな
るように設定することにより、図4(b)に示したリア
クタンス曲線の共振周波数fs、反共振周波数faをf
a<fsとすることができる。この複合共振子の特徴は
C’、即ちL’を変化させると共振周波数fsのみ
が変化し、反共振周波数faが変化しないことである。
FIG. 4A shows a SAW resonator R and a negative capacitance element.
In the case where a composite resonator is formed by connecting the
You. The inductance L 'is added to the negative capacitance element X.0Use
And the inductance L '0Is negative near frequency ω
Quantity-C '0= -1 / (ω2L ' 0) Is equivalent to SA
The inductance L 'is added to the W resonator R.0Compound connected in series
The reactance curve of the resonator is represented as shown in FIG.
It is. In this case, C '0To 0 <C ′0<Cd range
By setting so that the rear shown in FIG.
The resonance frequency fs and the anti-resonance frequency fa of the
a <fs. The characteristics of this composite resonator
C '0I.e., L '0Change only the resonance frequency fs
And the anti-resonance frequency fa does not change.

【0017】負性容量を形成する手段はインダクタンス
以外にも、例えば図5に示すように、オペアンプと抵抗
と容量により構成できることがよく知られている。即
ち、オペアンプの出力と入力(−)とを直結し、出力と
入力(+)との間に抵抗R1と容量Cとの直列回路を
接続した上で、その接続点に抵抗R2の一方の端子を接
続して、他方の端子を接地する。このように構成すると
入力(+)からみた電気等価回路は図5(b)に示すよ
うに、インダクタンスLはL=R1R2Cと抵抗
(R1+R2)との直列回路にみえる。オペアンプ2個
を用いた更に良好なインダクタンス変換回路もよく知ら
れている。
It is well known that means for forming a negative capacitance can be constituted by an operational amplifier, a resistor and a capacitor as shown in FIG. 5, for example, in addition to the inductance. That is, the input and output of the operational amplifier (-) and the directly connected, in terms of connecting the series circuit of the resistor R1 and the capacitor C R between the output and the input (+), one of the resistors R2 to the connection point Connect the terminal and ground the other terminal. This configuration with the input (+) viewed from the electric equivalent circuit as shown in FIG. 5 (b), the inductance L E appears in a series circuit of a resistor and L E = R1R2C R (R1 + R2). A better inductance conversion circuit using two operational amplifiers is well known.

【0018】図1の説明では反射反転型のIDT電極を
3つ用いた1次−3次縦結合二重モードSAWフィルタ
について説明したが、本発明はこれのみに限定するもの
ではなく、例えば2つの反射反転型IDT電極を用いて
縦1次と2次モードを励起し、この2つの共振モードを
利用した1次−2次縦結合二重モードSAWフィルタな
ど、他の共振モードを利用した縦結合多重モードSAW
フィルタに対しても同様に適用できることはいうまでも
ない。
In the description of FIG. 1, the description has been given of the primary-tertiary longitudinally-coupled dual mode SAW filter using three reflection inversion type IDT electrodes. However, the present invention is not limited to this. The first and second longitudinal modes are excited using two reflection inversion type IDT electrodes, and the longitudinal mode using another resonance mode such as a primary-secondary longitudinally coupled double mode SAW filter using these two resonance modes. Combined multimode SAW
It goes without saying that the same can be applied to the filter.

【0019】[0019]

【発明の効果】本発明は、以上説明したように構成した
ので、通過域の挿入損失の増大をまねくことなく、縦結
合多重モードSAWフィルタに本質的に生じる通過域近
傍の低域側に生じる減衰量劣化を改善することができる
という優れた効果を表す。
As described above, the present invention is constructed on the lower band near the pass band which essentially occurs in the longitudinally coupled multimode SAW filter without increasing the insertion loss in the pass band. This shows an excellent effect that the attenuation deterioration can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るSAWフィルタの構成を示す平面
図である。
FIG. 1 is a plan view showing a configuration of a SAW filter according to the present invention.

【図2】(a)はSAW共振子と電気素子Xとの並列接
続したものの電気等価回路、(b)はインダクタンス、
(c)電気素子Xにインダクタンスを用いた場合の電気
的等価回路、(d)は(c)のリアクタンス曲線であ
る。
2A is an electric equivalent circuit of a SAW resonator and an electric element X connected in parallel, FIG. 2B is an inductance,
(C) is an electrical equivalent circuit when an inductance is used for the electric element X, and (d) is a reactance curve of (c).

【図3】本発明に係るSAWフィルタにおいて、通過域
近傍の低域側の減衰劣化が改善される理由を説明する図
である。
FIG. 3 is a diagram illustrating the reason why the attenuation deterioration on the low frequency side near the passband is improved in the SAW filter according to the present invention.

【図4】(a)はSAW共振子に電気素子Xとを直列接
続して複合共振子を構成したものの電気的等価回路、
(b)はそのリアクタンス回路である。
FIG. 4A is an electrical equivalent circuit of a composite resonator formed by connecting an electric element X to a SAW resonator in series,
(B) is the reactance circuit.

【図5】(a)はオペアンプと抵抗と容量とからなる等
価インダクタンタ、(b)はその電気的等価回路であ
る。
5A is an equivalent inductor including an operational amplifier, a resistor and a capacitor, and FIG. 5B is an electrical equivalent circuit thereof.

【図6】(a)は従来の二重モードSAWフィルタの構
成を示す平面図、(b)はその通過域近傍のフィルタ特
性を示す図である。
FIG. 6A is a plan view showing a configuration of a conventional dual mode SAW filter, and FIG. 6B is a diagram showing filter characteristics in the vicinity of a pass band.

【図7】二重モードSAWフィルタとSAW共振子とを
直列接続した従来のSAWフィルタの構成を示す図であ
る。
FIG. 7 is a diagram showing a configuration of a conventional SAW filter in which a dual mode SAW filter and a SAW resonator are connected in series.

【図8】従来のSAWフィルタにおいて、通過域近傍の
高域側に生じる減衰量劣化が改善される理由を説明する
図である。
FIG. 8 is a diagram illustrating the reason why deterioration of attenuation caused on the high frequency side near the passband is improved in the conventional SAW filter.

【図9】IDT電極に反射反転型を用いた二重モードS
AWフィルタと正規型IDT電極を用いたSAW共振子
とを直列接続したSAWフィルタの構成を示す図であ
る。
FIG. 9 shows a double mode S using a reflection inversion type IDT electrode.
FIG. 3 is a diagram illustrating a configuration of a SAW filter in which an AW filter and a SAW resonator using a regular IDT electrode are connected in series.

【図10】通過域近傍の低域側に生じる減衰量劣化が改
善される理由を説明する図である。
FIG. 10 is a diagram for explaining the reason why the deterioration of attenuation caused on the low frequency side near the passband is improved.

【図11】(a)は反射反転型のIDT電極(部分)の
構成を説明する図、(b)はその電極上の表面電位を示
した断面図である。
11A is a diagram illustrating the configuration of a reflection-reversal type IDT electrode (part), and FIG. 11B is a cross-sectional view illustrating a surface potential on the electrode.

【図12】(a)は反射反転型IDT電極の単位区間の
6個のエッジ面(E1〜E6)を示す断面図、(b)は
前記6個のエッジ面における反射ベクトルE1〜E6と
その合成ベクトルΓ1を示す。
12A is a cross-sectional view showing six edge surfaces (E1 to E6) of a unit section of the reflection inversion type IDT electrode, and FIG. 12B is a view showing reflection vectors E1 to E6 and the reflection vectors E1 to E6 in the six edge surfaces. The composite vector # 1 is shown.

【符号の説明】[Explanation of symbols]

1、2、3・・反射反転型IDT電極 4a、4b、6a、6b・・グレーティング反射器 5・・IDT電極 X・・電気素子 F・・反射反転型二重モードSAWフィルタ R・・SAW共振子 L1、C1、R1、Cd・・SAW共振子の定数 L、L’・・インダクタンス値(−C、−
C’
1, 2, 3... Reflection inversion type IDT electrodes 4a, 4b, 6a, 6b... Grating reflector 5... IDT electrode X... Electric element F... Reflection inversion type double mode SAW filter R. The constants L 0 , L ′ 0 ... Inductance values (−C 0 , −−) of the elements L1, C1, R1, Cd.
C'0 )

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板の主面上に表面波の伝搬方向に
沿って複数の反射反転型IDT電極とこれらの両側にグ
レーティング反射器とを備えた縦結合多重モードSAW
フィルタと、正規型IDT電極と該IDT電極の両側に
グレーティング反射器を同一圧電基板上に配置した弾性
表面波共振子に負性容量素子Xを並列接続した複合共振
子とを直列接続した弾性表面波フィルタであって、 前記複合共振子の共振周波数fs及び反共振周波数fa
がfa<fsであり、反共振周波数faが前記縦結合多
重モードSAWフィルタの通過域近傍の低域側に生じる
減衰量劣化の周波数領域内に、共振周波数fsが通過域
内に設定されていることを特徴とする弾性表面波フィル
タ。
1. A longitudinally coupled multimode SAW having a plurality of reflection inversion type IDT electrodes on a main surface of a piezoelectric substrate along a propagation direction of a surface wave and grating reflectors on both sides thereof.
An elastic surface in which a filter, a normal type IDT electrode, and a composite resonator in which a negative capacitance element X is connected in parallel to a surface acoustic wave resonator in which grating reflectors are arranged on the same piezoelectric substrate on both sides of the IDT electrode are connected in series. A wave filter, comprising: a resonance frequency fs and an anti-resonance frequency fa of the composite resonator.
Satisfies fa <fs, and the anti-resonance frequency fa is set in the frequency range of attenuation deterioration occurring on the low frequency side near the pass band of the longitudinally coupled multimode SAW filter, and the resonance frequency fs is set in the pass band. A surface acoustic wave filter.
【請求項2】 圧電基板の主面上に表面波の伝搬方向に
沿って複数の反射反転型IDT電極とこれらの両側にグ
レーティング反射器とを備えた縦結合多重モードSAW
フィルタと、正規型IDT電極と該IDT電極の両側に
グレーティング反射器を同一圧電基板上に配置した弾性
表面波共振子に負性容量素子Xを直列接続した複合共振
子とを直列接続した弾性表面波フィルタであって、 前記複合共振子の共振周波数fs及び反共振周波数fa
がfa<fsであり、反共振周波数faが前記縦結合多
重モードSAWフィルタの通過域近傍の低域側に生じる
減衰量劣化の周波数領域内に、共振周波数fsが通過域
内に設定されていることを特徴とする弾性表面波フィル
タ。
2. A longitudinally coupled multimode SAW having a plurality of reflection inversion type IDT electrodes on a main surface of a piezoelectric substrate along a propagation direction of a surface wave and grating reflectors on both sides of the IDT electrodes.
An elastic surface in which a filter, a regular type IDT electrode, and a composite resonator in which a negative capacitance element X is connected in series to a surface acoustic wave resonator in which grating reflectors are arranged on the same piezoelectric substrate on both sides of the IDT electrode are connected in series. A wave filter, comprising: a resonance frequency fs and an anti-resonance frequency fa of the composite resonator.
Satisfies fa <fs, and the anti-resonance frequency fa is set in the frequency range of attenuation deterioration occurring on the low frequency side near the pass band of the longitudinally coupled multimode SAW filter, and the resonance frequency fs is set in the pass band. A surface acoustic wave filter.
【請求項3】 前記負性容量素子Xがインダクタンスで
あることを特徴とする請求項1あるいは2に記載の弾性
表面波フィルタ。
3. The surface acoustic wave filter according to claim 1, wherein the negative capacitance element X is an inductance.
【請求項4】 前記負性容量素子Xがオペアンプと抵抗
と容量とにより構成した回路であることを特徴とする請
求項1あるいは2に記載の弾性表面波フィルタ。
4. The surface acoustic wave filter according to claim 1, wherein the negative capacitance element X is a circuit including an operational amplifier, a resistor, and a capacitor.
【請求項5】 前記縦結合多重モードSAWフィルタが
1次−2次縦結合二重モードSAWフィルタであること
を特徴とする請求項1乃至4のいずれかに記載の弾性表
面波フィルタ。
5. The surface acoustic wave filter according to claim 1, wherein said longitudinally coupled multi-mode SAW filter is a primary-secondary longitudinally coupled dual-mode SAW filter.
【請求項6】 前記縦結合多重モードSAWフィルタが
1次−3次縦結合二重モードSAWフィルタであること
を特徴とする請求項1乃至4のいずれかにに記載の弾性
表面波フィルタ。
6. The surface acoustic wave filter according to claim 1, wherein the longitudinally-coupled multi-mode SAW filter is a first-order to third-order longitudinally-coupled dual-mode SAW filter.
JP2002156718A 2002-05-30 2002-05-30 Surface acoustic wave filter Pending JP2003347896A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385464B2 (en) 2005-09-08 2008-06-10 Hitachi Media Electronics Co., Ltd. Resonator type filter
US7573354B2 (en) * 2005-08-08 2009-08-11 Fujitsu Media Devices Limited Duplexer and ladder type filter
WO2011043074A1 (en) * 2009-10-07 2011-04-14 株式会社竹中工務店 Power supply system, and movable body and fixed body therefor
CN102544652A (en) * 2012-01-18 2012-07-04 华南理工大学 Ultra-wide-band filter with high selectivity and ultrahigh attenuation band restrain effect

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7573354B2 (en) * 2005-08-08 2009-08-11 Fujitsu Media Devices Limited Duplexer and ladder type filter
US7385464B2 (en) 2005-09-08 2008-06-10 Hitachi Media Electronics Co., Ltd. Resonator type filter
WO2011043074A1 (en) * 2009-10-07 2011-04-14 株式会社竹中工務店 Power supply system, and movable body and fixed body therefor
JP2011083132A (en) * 2009-10-07 2011-04-21 Takenaka Komuten Co Ltd Power supply system
CN102544652A (en) * 2012-01-18 2012-07-04 华南理工大学 Ultra-wide-band filter with high selectivity and ultrahigh attenuation band restrain effect

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