JP2003347278A - Substrate treatment apparatus and method for manufacturing semiconductor device - Google Patents
Substrate treatment apparatus and method for manufacturing semiconductor deviceInfo
- Publication number
- JP2003347278A JP2003347278A JP2002149020A JP2002149020A JP2003347278A JP 2003347278 A JP2003347278 A JP 2003347278A JP 2002149020 A JP2002149020 A JP 2002149020A JP 2002149020 A JP2002149020 A JP 2002149020A JP 2003347278 A JP2003347278 A JP 2003347278A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- processing chamber
- substrate
- processing
- product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 83
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 31
- 238000012545 processing Methods 0.000 claims abstract description 154
- 239000006227 byproduct Substances 0.000 claims abstract description 83
- 238000001816 cooling Methods 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 230000003213 activating effect Effects 0.000 claims abstract description 15
- 230000004913 activation Effects 0.000 claims description 3
- 238000005108 dry cleaning Methods 0.000 abstract description 32
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 135
- 239000007789 gas Substances 0.000 description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【課題】 プラズマドライクリーニングの連続処理を効
率的に行う。
【解決手段】 ウエハＷを処理する処理室１と、ウエハ
Ｗを処理する為の処理ガスをプラズマにより活性化させ
るプラズマユニット２と、処理室１内のウエハＷを加熱
するランプ３とを備え、プラズマユニット２で活性化さ
れた処理ガスの活性種を処理室１内へ供給し、これをウ
エハＷ表面の酸化膜と反応させる事でウエハＷ上に副生
成物を生じさせ、次いで当該ウエハＷをランプ３により
加熱する事で副生成物を除去するドライクリーニング装
置において、処理室１の内壁を冷却する処理室冷却機構
１１を備えた。これにより処理室１自体がランプ３等に
よって加熱されてしまう事を回避できるから、副生成物
生成の際における反応効率の低下を確実に抑制できる。
(57) [Summary] [PROBLEMS] To efficiently perform continuous processing of plasma dry cleaning. A processing chamber for processing a wafer, a plasma unit for activating a processing gas for processing the wafer with plasma, and a lamp for heating the wafer in the processing chamber are provided. The activated species of the processing gas activated by the plasma unit 2 is supplied into the processing chamber 1 and reacted with an oxide film on the surface of the wafer W to generate a by-product on the wafer W. In a dry cleaning device for removing by-products by heating the processing chamber 1 with a lamp 3, a processing chamber cooling mechanism 11 for cooling the inner wall of the processing chamber 1 is provided. As a result, the processing chamber 1 itself can be prevented from being heated by the lamp 3 or the like, so that a decrease in reaction efficiency at the time of by-product generation can be reliably suppressed.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマを用いて
酸化膜の除去その他の処理を行う半導体装置の製造方法
と、その方法の実施に使用する基板処理装置とに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for removing an oxide film and other processes using plasma, and a substrate processing apparatus used for carrying out the method.
【０００２】[0002]
【従来の技術】半導体集積回路その他の半導体装置の製
造においては、ウエハに対して成膜及びパターンエッチ
ング等の処理を繰り返し行って、これに所望の素子を多
数形成するわけであるが、このように各種の処理を行う
過程でウエハを処理装置間で移送する必要がある。その
ため、移送のときにウエハが大気にさらされることは不
可避であり、ウエハ面の大気にさらされた部分には、大
気中の酸素や水分等に起因して自然酸化膜が発生するの
が実情である。自然酸化膜は、半導体装置の電気的特性
を劣化させる等の原因となる。すなわち、例えばシリコ
ンの酸化膜は絶縁体であり、シリコンウエハ内の導電領
域に電極を接続しようとする場合、その表面にシリコン
酸化膜が残存していると接触抵抗を増大させてしまう。
また、シリコンの自然酸化膜は、不完全な結晶を有して
おり、熱酸化によって意図的に形成したシリコン酸化膜
と比べると膜質が劣るため、これがゲート絶縁部に形成
されてしまうとリーク電流が大きくなる。2. Description of the Related Art In the manufacture of semiconductor integrated circuits and other semiconductor devices, processes such as film formation and pattern etching are repeatedly performed on a wafer to form a number of desired elements on the wafer. It is necessary to transfer wafers between processing apparatuses in the course of performing various processes. For this reason, it is inevitable that the wafer is exposed to the atmosphere during transfer, and in fact, a natural oxide film is generated in the exposed portion of the wafer surface due to oxygen and moisture in the atmosphere. It is. The natural oxide film causes the electrical characteristics of the semiconductor device to be deteriorated. That is, for example, a silicon oxide film is an insulator, and when an electrode is to be connected to a conductive region in a silicon wafer, the contact resistance increases if the silicon oxide film remains on the surface.
In addition, the natural oxide film of silicon has imperfect crystals and is inferior in film quality to a silicon oxide film intentionally formed by thermal oxidation. Becomes larger.
【０００３】そこで、例えば成膜工程の前処理として、
自然酸化膜をウエハの被処理面から除去する表面処理を
行う場合がある。従来、酸化膜の除去に当っては、酸化
膜の形成されたウエハをフッ酸等の薬液中に浸漬して、
該薬液により酸化膜を除去する所謂ウエット洗浄が一般
的に行われていた。Therefore, for example, as a pretreatment of a film forming process,
In some cases, a surface treatment for removing a natural oxide film from a surface to be processed of a wafer is performed. Conventionally, in removing the oxide film, the wafer on which the oxide film is formed is immersed in a chemical solution such as hydrofluoric acid,
So-called wet cleaning for removing an oxide film with the chemical solution has been generally performed.
【０００４】ところが、半導体集積回路の高集積化及び
高微細化が推進されるに伴ってパターンの線幅やコンタ
クトホール径等も小さくなり、例えばコンタクトホール
の径は0.2〜0.3μｍ程度或いはそれ以下になっている。
そのため、ウエット洗浄では微細なトレンチの洗浄が困
難となっている。具体的には、薬液がホール内に充分染
み込まなかったり、或いは逆に染み込んだ薬液が表面張
力のためにホール内から排出できない場合等が生じ、ホ
ール底部の酸化膜を充分に除去できない問題が生じてい
た。また、基板上に複数層の積層構造を形成する場合に
は、当該各層毎にエッチングレートが異なるので、ホー
ル壁面に凸凹が発生する場合がある。さらに、各層の境
界面部分には薬液が浸透し易いために、浸透した薬液に
よって境界面が過度に削られてしまう問題があった。さ
らに、ウエット洗浄は大気中で行うから、酸化膜を除去
した後に1〜2原子層分の新たな自然酸化膜が成長するの
が実情である。このような時間と共に成長する自然酸化
膜を極力抑えるためには、ウエット洗浄後、一定の時間
以内に成膜を行う必要がある。従って、ウエット洗浄で
は、次工程までの時間的な制約が発生することになり、
結果的に工程の自由度が小さくなってしまう問題が発生
する。However, as the integration and miniaturization of semiconductor integrated circuits are promoted, the line width of a pattern and the diameter of a contact hole are reduced. For example, the diameter of a contact hole is about 0.2 to 0.3 μm or less. It has become.
Therefore, it is difficult to clean a fine trench by wet cleaning. Specifically, there is a case where the chemical solution does not sufficiently penetrate into the hole or, conversely, the chemical solution soaked cannot be discharged from the hole due to surface tension, and a problem arises in that the oxide film at the bottom of the hole cannot be sufficiently removed. I was In the case where a multilayer structure having a plurality of layers is formed on a substrate, since the etching rate is different for each layer, irregularities may occur on the hole wall surface. Furthermore, since the chemical solution easily penetrates into the boundary portion between the layers, there is a problem that the boundary surface is excessively shaved by the penetrated chemical solution. Further, since the wet cleaning is performed in the atmosphere, a new natural oxide film of 1 to 2 atomic layers grows after the removal of the oxide film. In order to minimize the natural oxide film that grows with such time, it is necessary to form a film within a certain time after wet cleaning. Therefore, in the wet cleaning, there is a time restriction until the next step,
As a result, there arises a problem that the degree of freedom of the process is reduced.
【０００５】そこで、上記の問題を解決するものとし
て、プラズマ処理技術を用いて酸化膜の除去その他の前
処理を行うことが提案されている。これは、薬液による
ウエット洗浄に代えて、所定の処理ガス(エッチングガ
ス)を用いて酸化膜を除去する所謂ドライクリーニング
法である。In order to solve the above problem, it has been proposed to remove the oxide film and perform other pretreatments using a plasma treatment technique. This is a so-called dry cleaning method in which an oxide film is removed using a predetermined processing gas (etching gas) instead of wet cleaning with a chemical solution.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、発明者
らは酸化膜の除去等にプラズマ処理技術を用いる場合、
別の課題が生じることを見出した。以下、詳細に説明す
る。However, when the plasma processing technology is used for removing an oxide film or the like,
It has been found that another problem arises. The details will be described below.
【０００７】例えば、ドライクリーニング法の中には次
のようなものがある。すなわち、処理ガスとして例えば
Ｎ2,ＮＨ3,及びＮＦ3を使用し、まず処理室とは別の領
域で上記のガスを活性化し、それらを混合した後に処理
室内に導入する。すると、活性化された混合ガスが、処
理室内におけるウエハ上の酸化膜と反応し、ウエハ上に
副生成物が生成される(副生成物生成工程）。なお、こ
の副生成物は(ＮＨ4)2ＳｉＦ6又はＮＨ4Ｆであることが
判っている。次いで、生成した副生成物を除去するため
にウエハを加熱処理する(副生成物除去工程）。これに
より、副生成物が昇華され、結果として酸化膜が除去さ
れる。For example, the following are among dry cleaning methods. That is, for example, N 2 , NH 3 , and NF 3 are used as processing gases, the above-mentioned gases are first activated in a region different from the processing chamber, and they are mixed and then introduced into the processing chamber. Then, the activated mixed gas reacts with the oxide film on the wafer in the processing chamber, and a by-product is generated on the wafer (by-product generation step). It has been found that this by-product is (NH 4 ) 2 SiF 6 or NH 4 F. Next, the wafer is subjected to a heat treatment to remove the generated by-product (by-product removal step). Thereby, by-products are sublimated, and as a result, the oxide film is removed.
【０００８】ここで、副生成物の生成反応は温度に非常
に敏感であり、ウエハの温度をきめ細かく制御する必要
がある。しかも、本発明者らの研究によれば、本ドライ
クリーニング法における副生成物の生成反応に限り、特
に室温以下の温度領域で活発化することが判明した。ま
た、ウエハの温度が上昇するに伴って副生成物の生成速
度が低下し、ウエハの温度が50℃を超えると殆ど副生成
物が生成されなくなることも判明した。従って、本ドラ
イクリーニング法を効率的に行うには、副生成物生成工
程においてウエハを室温以下で処理することが望まれ
る。Here, the by-product formation reaction is very sensitive to temperature, and it is necessary to precisely control the temperature of the wafer. In addition, according to the study of the present inventors, it has been found that only the by-product formation reaction in the present dry cleaning method is activated particularly in a temperature range of room temperature or lower. It was also found that as the temperature of the wafer increased, the generation rate of by-products decreased, and when the temperature of the wafer exceeded 50 ° C., almost no by-product was generated. Therefore, in order to efficiently perform the dry cleaning method, it is desired that the wafer is processed at room temperature or lower in the by-product generation step.
【０００９】ところが、上記副生成物生成工程におい
て、Ｎ2及びＮＨ3の混合ガスをプラスマ化する場合には
特に高い熱が発生するので、その熱が処理室に伝わって
しまうことにより、副生成物の生成反応が妨げられやす
い。このように、本ドライクリーニング法では副生成物
生成工程において、高温の発生を伴うプラズマを用いな
がら、ウエハを室温以下で処理すると云う相反する二つ
の条件を満足しなければならない。この課題は、酸素プ
ラズマや水素プラズマなどを単独で用いた従来の単なる
プラズマドライクリーニング法等にはない本ドライクリ
ーニング法に特有の課題である。[0009] However, in the above-mentioned by-product formation step, when a mixed gas of N 2 and NH 3 is converted into a plasma, particularly high heat is generated. The formation reaction of the product is easily hindered. As described above, in the present dry cleaning method, in the by-product generation step, two contradictory conditions that the wafer is processed at a room temperature or lower while using plasma accompanied by high temperature generation must be satisfied. This problem is a problem peculiar to the present dry cleaning method which is not present in the conventional simple plasma dry cleaning method using oxygen plasma, hydrogen plasma or the like alone.
【００１０】また、本ドライクリーニング法を連続的に
行う場合、ウエハを室温以下で処理することが望まれる
副生成物生成工程と、ウエハを高温処理する必要がある
副生成物除去工程とを交互に行うことになる。従って、
これら双方の工程を同一の処理室内で行おうとする場合
には、副生成物除去工程で発生した熱が処理室に蓄積さ
れ、後の副生成物生成反応の効率を悪化させる等の課題
が生じるため、かかる連続処理を効率的に行うことは困
難である。場合によっては、所望のエッチング選択性が
得られなかったり、或いはウエハ表面の酸化膜を充分に
除去できないと云った不都合が生じることも考えられ
る。When the dry cleaning method is continuously performed, a by-product generation step in which it is desired to process the wafer at a room temperature or lower and a by-product removal step in which the wafer needs to be processed at a high temperature are alternately performed. Will be done. Therefore,
If these two steps are to be performed in the same processing chamber, the heat generated in the by-product removal step is accumulated in the processing chamber, causing problems such as deteriorating the efficiency of the later by-product generation reaction. Therefore, it is difficult to perform such continuous processing efficiently. In some cases, it may be inconvenient that a desired etching selectivity cannot be obtained or an oxide film on the wafer surface cannot be sufficiently removed.
【００１１】本発明の目的は、上記ドライクリーニング
法において副生成物を効率的に生成できるようにするこ
とである。また本発明の目的は、上記ドライクリーニン
グ法の連続処理を効率的に行えるようにすることであ
る。An object of the present invention is to make it possible to efficiently generate by-products in the dry cleaning method. Another object of the present invention is to enable the continuous processing of the dry cleaning method to be performed efficiently.
【００１２】[0012]
【課題を解決するための手段】本発明の第1の態様によ
れば、被処理体としての基板を処理する処理室と、前記
基板を処理する為に用いる処理ガスをプラズマにより活
性化させる活性化手段と、前記処理室内に配置される前
記基板を加熱する加熱手段と、を備え、前記活性化手段
により活性化された処理ガスの活性種を前記処理室内へ
供給することで前記基板上に副生成物を生じさせ、次い
で当該基板を前記加熱手段により加熱することで前記副
生成物を除去する基板処理装置であって、前記処理室の
内壁を冷却する処理室冷却手段を備えた基板処理装置が
提供される。According to a first aspect of the present invention, there is provided a processing chamber for processing a substrate as an object to be processed, and an activation chamber for activating a processing gas used for processing the substrate by plasma. Activating means, and heating means for heating the substrate disposed in the processing chamber, the active species of the processing gas activated by the activating means is supplied to the processing chamber by supplying active species into the processing chamber A substrate processing apparatus for removing a by-product by generating a by-product and then heating the substrate by the heating unit, wherein the substrate processing apparatus includes a processing chamber cooling unit that cools an inner wall of the processing chamber. An apparatus is provided.
【００１３】この第1の態様においては、処理室冷却手
段が処理室の内壁を冷却するから、この処理室自体が加
熱手段やプラズマ光によって加熱されてしまうことを回
避できる。これにより、基板上に副生成物を生じさせる
ときに、処理室内壁からの輻射熱等に起因して副生成物
生成の反応効率が低下してしまうことを確実に抑制でき
る。また、処理室の内壁を冷却することにより、活性種
が基板に至る過程で当該活性種そのものも処理室の内壁
によって間接的に冷却されるから、副生成物を迅速に生
成できる。従って、上記基板の効率的な連続処理を安定
して行える。In the first aspect, since the processing chamber cooling means cools the inner wall of the processing chamber, the processing chamber itself can be prevented from being heated by the heating means or the plasma light. Thus, when a by-product is generated on the substrate, it is possible to reliably suppress a reduction in the reaction efficiency of the by-product generation due to radiant heat from the inner wall of the processing chamber. In addition, by cooling the inner wall of the processing chamber, the active species itself is indirectly cooled by the inner wall of the processing chamber when the active species reaches the substrate, so that a by-product can be quickly generated. Therefore, efficient continuous processing of the substrate can be stably performed.
【００１４】本発明の具体的な態様においては、前記処
理室冷却手段が、前記処理室の内壁を室温(25℃)以下、
好ましくは20℃以下に冷却する。これにより、室温以下
の熱環境下で基板上に副生成物を生じさせることができ
るから、その生成反応の一層の促進が図られる。In a specific embodiment of the present invention, the processing chamber cooling means sets the inner wall of the processing chamber to a room temperature (25 ° C.) or less.
Preferably, it is cooled to 20 ° C. or lower. Thus, by-products can be generated on the substrate in a thermal environment at room temperature or lower, and the generation reaction is further promoted.
【００１５】本発明の第2の態様によれば、第1の態様に
よる基板処理装置において、前記処理室内に配置され、
前記基板を載置する基板載置台と、前記基板載置台を冷
却する載置台冷却手段と、前記基板を前記加熱手段によ
り加熱するときには、当該基板を前記基板載置台から離
した状態で支持する一方、前記基板上に副生成物を生じ
させるときには当該基板を前記基板載置台に戻す基板移
動手段と、をさらに備えた基板処理装置が提供される。According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, the substrate processing apparatus is disposed in the processing chamber.
A substrate mounting table on which the substrate is mounted, a mounting table cooling unit for cooling the substrate mounting table, and, when the substrate is heated by the heating unit, supporting the substrate in a state separated from the substrate mounting table. A substrate processing apparatus further comprising: substrate moving means for returning a substrate to the substrate mounting table when a by-product is generated on the substrate.
【００１６】この第2の態様において、基板上に副生成
物を生じさせるときには、基板移動手段が基板を基板載
置台に戻す。基板載置台は、載置台冷却手段によって冷
却されるから、これに載置された基板も冷却されて副生
成物の生成反応が促進される。一方、基板を加熱手段に
より加熱するときには、基板移動手段が基板を基板載置
台から離した状態で支持するから、加熱手段による基板
の加熱効果が、載置台冷却手段による冷却効果によって
減殺されることはなく、基板のみを効率的に加熱でき、
副生成物を迅速かつ確実に除去できる。以上により、基
板の連続処理を一層効率的に行える。In the second embodiment, when a by-product is generated on the substrate, the substrate moving means returns the substrate to the substrate mounting table. Since the substrate mounting table is cooled by the mounting table cooling means, the substrate mounted on the substrate mounting table is also cooled, and the reaction of generating by-products is promoted. On the other hand, when the substrate is heated by the heating means, since the substrate moving means supports the substrate in a state separated from the substrate mounting table, the heating effect of the substrate by the heating means is reduced by the cooling effect by the mounting table cooling means. No, only the substrate can be efficiently heated,
By-products can be removed quickly and reliably. As described above, the continuous processing of the substrate can be performed more efficiently.
【００１７】本発明の具体的な態様においては、前記載
置台冷却手段が、前記基板載置台を室温(25℃)以下、好
ましくは20℃以下に冷却する。これにより、室温以下の
熱環境下で基板上に副生成物を生じさせることができる
から、その生成反応の一層の促進が図られる。In a specific embodiment of the present invention, the mounting table cooling means cools the substrate mounting table to a room temperature (25 ° C.) or lower, preferably 20 ° C. or lower. Thus, by-products can be generated on the substrate in a thermal environment at room temperature or lower, and the generation reaction is further promoted.
【００１８】本発明においては、前記基板載置台が、石
英、ＳｉＣ、ＡｌＮ、又はＡｌ2Ｏ3を用いて構成されて
いるのが好ましい。In the present invention, it is preferable that the substrate mounting table is made of quartz, SiC, AlN, or Al 2 O 3 .
【００１９】本発明の具体的な態様においては、前記加
熱手段が前記基板を80℃以上、好ましくは90℃以上、よ
り好ましくは100℃以上に加熱する。加熱手段としては
ランプを用いるのが好ましい。ランプによれば、ウエハ
の急加熱が可能であるから、副生成物を短時間で除去で
きる。In a specific embodiment of the present invention, the heating means heats the substrate to 80 ° C. or higher, preferably 90 ° C. or higher, more preferably 100 ° C. or higher. It is preferable to use a lamp as the heating means. According to the lamp, since the wafer can be rapidly heated, by-products can be removed in a short time.
【００２０】本発明の具体的な態様においては、前記活
性化手段は、窒素と水素とを含む窒素水素系ガスをプラ
ズマにより活性化させて得た活性種に、弗化窒素ガスを
添加することにより、当該弗化窒素ガスを活性化するよ
うに構成される。前記窒素水素系ガスとしては、Ｎ2及
びＮＨ3の混合ガス、又はＮ2及びＨ2の混合ガス等が挙
げられる。In a specific aspect of the present invention, the activating means includes adding nitrogen fluoride gas to an active species obtained by activating a nitrogen-hydrogen-based gas containing nitrogen and hydrogen by plasma. Thereby, the nitrogen fluoride gas is activated. Examples of the nitrogen-hydrogen-based gas include a mixed gas of N 2 and NH 3 or a mixed gas of N 2 and H 2 .
【００２１】本発明の実施態様では、前記活性種を前記
基板上の酸化膜と反応させることにより前記副生成物を
生じさせる。ここにいう酸化膜とは、前記基板上に意図
的に形成した酸化膜のみならず、意図することなく前記
基板上に自然に付着し或いは形成された酸化膜(自然酸
化膜)を含む。In an embodiment of the present invention, the by-product is generated by reacting the active species with an oxide film on the substrate. The oxide film referred to here includes not only an oxide film intentionally formed on the substrate, but also an oxide film (natural oxide film) naturally attached or formed on the substrate unintentionally.
【００２２】本発明の第3の態様によれば、基板を処理
する為に用いる処理ガスをプラズマにより活性化させて
得た活性種を、処理室内に配置された前記基板へ供給す
ることで当該基板上に副生成物を生じさせる副生成物生
成工程と、次いで、前記処理室内の基板を所定の温度に
加熱することで前記副生成物を除去する副生成物除去工
程と、を有する半導体装置の製造方法であって、前記副
生成物生成工程と前記副生成物除去工程とは、共に前記
処理室の内壁を冷却しつつ行う半導体装置の製造方法も
提供される。According to the third aspect of the present invention, an active species obtained by activating a processing gas used for processing a substrate by plasma is supplied to the substrate disposed in a processing chamber. A semiconductor device comprising: a by-product generation step of generating a by-product on a substrate; and a by-product removal step of removing the by-product by heating the substrate in the processing chamber to a predetermined temperature. A method for manufacturing a semiconductor device, wherein the by-product generation step and the by-product removal step are both performed while cooling an inner wall of the processing chamber.
【００２３】この第3の態様においては、副生成物生成
工程と副生成物除去工程とを共に処理室の内壁を冷却し
つつ行うから、副生成物生成工程では副生成物を効率的
に生成できると共に、副生成物除去工程では処理室自体
が加熱されてしまうことを回避できる。また、処理室の
内壁を冷却することにより、この処理室内に供給する処
理ガスの活性種そのものをも冷却できるから、副生成物
生成の反応効率を向上できる。従って、上記基板の効率
的な連続処理を安定して行える。In the third embodiment, since the by-product generation step and the by-product removal step are both performed while cooling the inner wall of the processing chamber, the by-product generation step efficiently generates the by-product. In addition, it is possible to prevent the processing chamber itself from being heated in the by-product removal step. Further, by cooling the inner wall of the processing chamber, the active species of the processing gas supplied into the processing chamber itself can be cooled, so that the reaction efficiency of by-product formation can be improved. Therefore, efficient continuous processing of the substrate can be stably performed.
【００２４】本発明の具体的な態様においては、前記副
生成物生成工程と前記副生成物除去工程とは、共に前記
処理室の内壁を室温(25℃)以下、好ましくは20℃以下に
冷却しつつ行う。In a specific embodiment of the present invention, in the by-product forming step and the by-product removing step, the inner wall of the processing chamber is cooled to room temperature (25 ° C.) or lower, preferably 20 ° C. or lower. Perform while doing.
【００２５】本発明の第4の態様によれば、第3の態様に
よる半導体装置の製造方法において、前記副生成物生成
工程では、所定温度に冷却された基板載置台上に前記基
板を載置した状態で、当該基板上に前記副生成物を生じ
させ、前記副生成物除去工程では、前記基板を前記基板
載置台から離した状態で、前記基板を加熱する半導体装
置の製造方法が提供される。According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the third aspect, in the by-product forming step, the substrate is mounted on a substrate mounting table cooled to a predetermined temperature. A method for manufacturing a semiconductor device, wherein the by-product is generated on the substrate in a state where the substrate is placed, and in the by-product removal step, the substrate is heated while the substrate is separated from the substrate mounting table. You.
【００２６】本発明の具体的な態様においては、前記基
板載置台を室温(25℃)以下、好ましくは20℃以下に冷却
する。また前記副生成物除去工程では、前記基板を80℃
以上、好ましくは90℃以上、より好ましくは100℃以上
に加熱する。In a specific embodiment of the present invention, the substrate mounting table is cooled to room temperature (25 ° C.) or lower, preferably 20 ° C. or lower. In the by-product removal step, the substrate is kept at 80 ° C.
The heating is carried out above, preferably at least 90 ° C, more preferably at least 100 ° C.
【００２７】本発明の具体的な態様においては、前記副
生成物生成工程では、窒素と水素とを含む窒素水素系ガ
スをプラズマにより活性化させて得た活性種に、弗化窒
素ガスを添加することにより、当該弗化窒素ガスを活性
化し、その活性種を前記基板へ供給する。In a specific embodiment of the present invention, in the by-product formation step, nitrogen fluoride gas is added to active species obtained by activating a nitrogen-hydrogen-based gas containing nitrogen and hydrogen by plasma. This activates the nitrogen fluoride gas and supplies the activated species to the substrate.
【００２８】[0028]
【発明の実施の形態】図１は、実施の形態によるドライ
クリーニング装置を示す。このドライクリーニング装置
は、ウエハ(基板)Ｗを処理する処理室１と、ウエハＷを
処理する為に用いる処理ガスをプラズマにより活性化さ
せるリモートプラズマユニット(活性化手段)２と、処理
室１内のウエハＷを加熱するランプ(加熱手段)３とを備
えており、リモートプラズマユニット２で活性化された
処理ガスの活性種を処理室１内のウエハＷへ供給し、こ
れをウエハＷ表面の酸化膜と反応させることでウエハＷ
上に副生成物を生じさせ、次いで当該ウエハＷをランプ
３により加熱することで副生成物を昇華させて除去する
ように構成されている。そして、このドライクリーニン
グ装置は、処理室１の内壁を冷却する処理室冷却機構
(処理室冷却手段)４を備えた点を最大の特徴としてい
る。以下、各部について詳細に説明する。FIG. 1 shows a dry cleaning apparatus according to an embodiment. The dry cleaning apparatus includes a processing chamber 1 for processing a wafer (substrate) W, a remote plasma unit (activating means) 2 for activating a processing gas used for processing the wafer W with plasma, And a lamp (heating means) 3 for heating the wafer W. The active species of the processing gas activated by the remote plasma unit 2 is supplied to the wafer W in the processing chamber 1 and is supplied to the surface of the wafer W. Wafer W by reacting with oxide film
By-products are formed on the wafer W, and the wafer W is heated by the lamp 3 to sublimate and remove the by-products. The dry cleaning device includes a processing chamber cooling mechanism for cooling the inner wall of the processing chamber 1.
(Processing room cooling means) 4 is the biggest feature. Hereinafter, each part will be described in detail.
【００２９】処理室１は、例えばアルミニウムで多角形
に形成されており、その内壁にはウエＷの汚染等を防止
するためにアルマイト処理が施されている。この処理室
１には、処理ガスの活性種を導入するための活性種供給
口５と、この処理室１内の処理済みガス等を排気するた
めのガス排気口６とが形成されている。ガス排気口６に
は、図示せぬ真空ポンプ等に通じる排気管が継ぎ手構造
により接続されている。The processing chamber 1 is formed in a polygonal shape of, for example, aluminum, and its inner wall is subjected to alumite processing in order to prevent contamination of the wafer W and the like. The processing chamber 1 has an active species supply port 5 for introducing active species of the processing gas and a gas exhaust port 6 for exhausting the processed gas and the like in the processing chamber 1. An exhaust pipe leading to a vacuum pump or the like (not shown) is connected to the gas exhaust port 6 by a joint structure.
【００３０】前述した処理室冷却機構４は、図示はしな
いが、処理室１の壁面に沿って設けられた流路と、この
流路に冷却用の流体(冷媒)を循環させる循環装置と、前
記冷媒を冷却する冷却手段とを備え、処理室１の内壁を
20℃以下に冷却するように構成されている。具体的に
は、前記流路は処理室１の壁内部を通過するように構成
されている。この流路は、処理室１の壁と一体的に構成
できる。処理室１の壁面をジャケット構造とすることに
よっても処理室１の壁と一体的に流路を構成できる。ま
た流路は、熱伝導率の高い素材からなる冷却パイプによ
っても構成できる。その場合、冷却パイプは処理室１の
外壁に沿って張り巡らせてもよい。また、冷媒として
は、冷却水等を用いることができる。一実施例において
は、処理室冷却機構４をチラーユニットで構成する。Although not shown, the processing chamber cooling mechanism 4 includes a flow path provided along the wall of the processing chamber 1 and a circulating device for circulating a cooling fluid (refrigerant) through the flow path. Cooling means for cooling the refrigerant, and
It is configured to cool below 20 ° C. Specifically, the flow path is configured to pass through the inside of the wall of the processing chamber 1. This flow path can be formed integrally with the wall of the processing chamber 1. By forming the wall surface of the processing chamber 1 into a jacket structure, a flow path can be integrally formed with the wall of the processing chamber 1. Further, the flow path can also be constituted by a cooling pipe made of a material having a high thermal conductivity. In that case, the cooling pipe may be stretched along the outer wall of the processing chamber 1. In addition, cooling water or the like can be used as the refrigerant. In one embodiment, the processing chamber cooling mechanism 4 is constituted by a chiller unit.
【００３１】また処理室１内には、アルミニウムやペル
チェ素子等のように熱伝導率の高い素材を用いてブロッ
ク状に構成されたウエハ載置台(基板載置台)７が配置さ
れている。ウエハ載置台７は、ウエハＷ裏面の略全領域
に接するウエハ載置面を有していて、該ウエハ載置面を
含むウエハ載置台５の表面は、ウエハＷの金属汚染を防
ぐために、石英、窒化アルミ、ＳｉＣ、Ａｌ2Ｏ3、又は
セラミック等の材質でカバー(被覆)されている。ウエハ
載置台７は、図示せぬ磁気シール構造を介して処理室１
の外に配置された回転機構８に繋がれている。In the processing chamber 1, a wafer mounting table (substrate mounting table) 7 formed in a block shape using a material having high thermal conductivity such as aluminum or a Peltier element is arranged. The wafer mounting table 7 has a wafer mounting surface in contact with substantially the entire area of the back surface of the wafer W. The surface of the wafer mounting table 5 including the wafer mounting surface is made of quartz to prevent metal contamination of the wafer W. , Aluminum nitride, SiC, Al 2 O 3 , or ceramic. The wafer mounting table 7 is connected to the processing chamber 1 via a magnetic seal structure (not shown).
Is connected to a rotation mechanism 8 disposed outside the box.
【００３２】またウエハ載置台７には、載置台冷却機構
(載置台冷却手段)９が設けられている。載置台冷却機構
９は、図示はしないが、ウエハ載置台７に沿って設けら
れた流路と、この流路に冷却用の流体(冷媒)を循環させ
る循環装置と、前記冷媒を冷却する冷却手段とを備え、
ウエハ載置台７の表面を20℃以下に冷却するように構成
されている。具体的には、前記流路はウエハ載置台７の
内部を通過するように構成されている。冷媒としては、
冷却水等を用いることができる。The wafer mounting table 7 has a mounting table cooling mechanism.
(Mounting table cooling means) 9 is provided. Although not shown, the mounting table cooling mechanism 9 includes a flow path provided along the wafer mounting table 7, a circulating device for circulating a cooling fluid (refrigerant) through the flow path, and a cooling device for cooling the refrigerant. And means,
The surface of the wafer mounting table 7 is configured to be cooled to 20 ° C. or less. Specifically, the flow path is configured to pass through the inside of the wafer mounting table 7. As a refrigerant,
Cooling water or the like can be used.
【００３３】また処理室１内において、ウエハ載置台７
の上方には、ランプ３からウエハ載置台７上のウエハＷ
を臨む窓１０が設けられている。窓１０は、石英ガラス
のように赤外線を透過する素材を用いて円形または多角
形形状に構成されており、Ｏリング等を用いて処理室１
に気密に設置されている。なお、窓の大きさはウエハＷ
に対応した大きさが望ましいが、それよりも大きくても
よい。In the processing chamber 1, the wafer mounting table 7
Above the wafer W from the lamp 3 on the wafer mounting table 7
Is provided. The window 10 is formed in a circular or polygonal shape using a material that transmits infrared light such as quartz glass, and the processing chamber 1 is formed using an O-ring or the like.
It is installed airtight. Note that the size of the window is
Is desirable, but may be larger.
【００３４】ランプ３は、ウエハＷの被処理面(酸化物
が形成されていた面)に赤外線を照射できるようにウエ
ハ載置台７の上方に配置されており、窓８を通して処理
室１内のウエハＷに赤外線を照射し、これを100℃以上
の所定温度に加熱する。このランプ３は、具体的にはハ
ロゲンランプなどから構成されており、窓１０と略同じ
サイズを有している。また、ランプ３を取り囲むように
してランプカバー３１が設置されている。ランプカバー
３１の内壁は反射手段としての鏡面が形成されており、
ランプ３から発生した赤外線を効率よくウエハＷに照射
できるようになっている。The lamp 3 is arranged above the wafer mounting table 7 so as to irradiate the surface to be processed (the surface on which the oxide is formed) of the wafer W with infrared rays. The wafer W is irradiated with infrared rays and heated to a predetermined temperature of 100 ° C. or higher. The lamp 3 is specifically composed of a halogen lamp or the like, and has substantially the same size as the window 10. A lamp cover 31 is provided so as to surround the lamp 3. The inner wall of the lamp cover 31 has a mirror surface as a reflection means,
The infrared rays generated from the lamp 3 can be efficiently irradiated on the wafer W.
【００３５】また、本ドライクリーニング装置は、ウエ
ハ載置台７に対して鉛直方向(図１中、上下方向)に相対
変位するウエハ昇降機構(基板移動手段)１１も備える。
ウエハ昇降機構１１は、ウエハ載置台７のウエハ載置面
から出没可能に構成された少なくとも3本のリフトピン
１１１ａ,１１１ｂ…を用いてウエハＷの昇降を行う。The present dry cleaning apparatus further includes a wafer lifting / lowering mechanism (substrate moving means) 11 which is displaced vertically (in the vertical direction in FIG. 1) relative to the wafer mounting table 7.
The wafer elevating mechanism 11 elevates and lowers the wafer W using at least three lift pins 111a, 111b,... Which can be protruded and retracted from the wafer mounting surface of the wafer mounting table 7.
【００３６】すなわち、処理室１外におけるウエハ載置
台７の下方に相当する位置にはピン支持部１１２が配置
されている。このピン支持部１１２には、ウエハＷを水
平に支持できるように配された少なくとも3本のリフト
ピン１１１ａ,１１１ｂ…が立設されている。リフトピ
ン１１１ａ,１１１ｂ…の各々は、処理室１の外壁面か
らウエハ載置面にわたって貫かれた貫通孔１２ａ,１２
ｂ…に挿通されている。That is, the pin support 112 is disposed at a position outside the processing chamber 1 and below the wafer mounting table 7. At least three lift pins 111a, 111b,... Arranged so as to support the wafer W horizontally are provided upright on the pin support portion 112. Each of the lift pins 111a, 111b,... Is provided with a through hole 12a, 12b penetrating from the outer wall surface of the processing chamber 1 to the wafer mounting surface.
b ... are inserted.
【００３７】そして、図示せぬ昇降駆動装置によってピ
ン支持部１１２が鉛直方向に昇降され、このピン支持部
１１２の昇降と共に、各貫通孔１２ａ,１２ｂ…に挿通
されたリフトピン１１１ａ,１１１ｂ…が昇降し、当該
各リフトピンの上端がウエハ載置面から出没するように
なっている。なお、昇降駆動装置は、モータや油圧また
は空気圧シリンダ等を用いたアクチュエータによって構
成できる。図２は、ランプ３によってウエハＷを加熱す
る際に各リフトピンの上端がウエハ載置面から突出した
状態を示しており、同図に示すように、このときには、
ウエハＷが当該各ピンによってウエハ載置台７から離さ
れ、ランプ３側に持ち上げられる。The pin support 112 is moved up and down by a vertical drive unit (not shown), and the lift pins 111a, 111b... Inserted through the through holes 12a, 12b. The upper end of each of the lift pins protrudes and retracts from the wafer mounting surface. The lifting drive device can be configured by an actuator using a motor, a hydraulic or pneumatic cylinder, or the like. FIG. 2 shows a state in which the upper end of each lift pin protrudes from the wafer mounting surface when the wafer W is heated by the lamp 3. As shown in FIG.
The wafer W is separated from the wafer mounting table 7 by the pins, and is lifted to the lamp 3 side.
【００３８】また、各リフトピン１１１ａ,１１１ｂ…
の下端部には、それぞれ閉塞部材１１３ａ,１１３ｂ…
が設けられていて、リフトピンによってウエハＷが持ち
上げられたときには、これら閉塞部材１１３ａ,１１３
ｂ…によって、それぞれ貫通孔１２ａ,１２ｂ…の総て
が閉塞され、処理室１内の気密が保たれるようになって
いる。一方、ウエハ載置面にウエハＷが載置されている
ときには、該ウエハＷによって貫通孔１２ａ,１２ｂ…
が閉塞され、処理室１内の気密が保たれるようになって
いる。Each of the lift pins 111a, 111b...
Are provided at the lower ends thereof, respectively.
Are provided, and when the wafer W is lifted by the lift pins, these closing members 113a, 113
b, all of the through holes 12a, 12b,... are closed, so that the airtight inside the processing chamber 1 is maintained. On the other hand, when the wafer W is mounted on the wafer mounting surface, the through holes 12a, 12b,.
Is closed, and the airtightness in the processing chamber 1 is maintained.
【００３９】ランプ３によってウエハＷを加熱するとき
に、ウエハＷの熱がリフトピンを伝わって逃げないよう
にするために、上記各リフトピンは熱伝導率が低い素材
を用いて構成するのが好ましい。または、各リフトピン
自体をランプ３とは別の熱源によって加熱する構成とす
れば、ウエハＷの熱が逃げてしまうのを防止できる。な
お、リフトピンはピン支持部１１２で連結されている
が、各リフトピンを連結せずに独立させてもよい。ま
た、ピン支持部１１２が処理室１の内部に配置されるよ
うに構成してもよい。さらに、ウエハ載置台７がピン支
持部１１２に対して昇降することにより、リフトピンが
ウエハ載置面から出没するように構成してもよい。In order to prevent the heat of the wafer W from being transmitted through the lift pins when the wafer W is heated by the lamp 3, each of the lift pins is preferably made of a material having a low thermal conductivity. Alternatively, if each lift pin itself is heated by a heat source different from the lamp 3, the heat of the wafer W can be prevented from escaping. Although the lift pins are connected by the pin support portion 112, the lift pins may be independently connected without being connected. Further, the pin support 112 may be arranged inside the processing chamber 1. Further, the lift pins may move up and down from the wafer mounting surface by moving the wafer mounting table 7 up and down with respect to the pin support 112.
【００４０】リモートプラズマユニット２は、サファイ
アガラス等で形成された活性種生成室２ａと、プラズマ
発生のためのエネルギ源としてのマイクロ(μ)波を発生
するμ波電源２ｃと、このμ波電源２ｃにて発生したμ
波を活性種生成室２ａへ効率よく伝える導波管２ｂとか
ら構成されている。なお、μ波電源２ｃは、例えば2.45
ギガヘルツのμ波を発生する。The remote plasma unit 2 includes an active species generation chamber 2a formed of sapphire glass or the like, a microwave power supply 2c for generating a microwave (μ) wave as an energy source for plasma generation, and a microwave power supply 2c. Μ generated in 2c
And a waveguide 2b for efficiently transmitting the wave to the active species generation chamber 2a. The microwave power supply 2c is, for example, 2.45.
Generates gigahertz microwaves.
【００４１】活性種生成室２ａは、Ｎ2とＨ2の混合ガス
(水素窒素系ガス)を供給する混合ガス配管１３と連通し
ている。混合ガス配管１３はＮ2ガス源１４及びＨ2ガス
源１５に通じている。詳細には、混合ガス配管１３は各
ガス源１４,１５に向かって途中で二股に分岐してお
り、分岐した一方の配管(Ｎ2配管)１３ａがＮ2ガス源１
４に接続され、他方の配管(Ｈ2配管)１３ｂがＨ2ガス源
１５に接続されている。さらに当該各ガス配管１３ａ,
１３ｂの途中には、それぞれＮ2ガス及びＨ2ガスの流量
を制御するMFC(マスフローコントローラ)１６,１７が設
けられている。The active species generation chamber 2a is a mixed gas of N 2 and H 2
(Hydrogen-nitrogen-based gas). The mixed gas pipe 13 communicates with an N 2 gas source 14 and an H 2 gas source 15. More specifically, the mixed gas pipe 13 is bifurcated on the way toward each of the gas sources 14 and 15, and one of the branched pipes (N 2 pipe) 13 a is an N 2 gas source 1.
4, and the other pipe (H 2 pipe) 13 b is connected to the H 2 gas source 15. Further, the respective gas pipes 13a,
In the middle of 13b, MFCs (mass flow controllers) 16, 17 for controlling the flow rates of the N 2 gas and the H 2 gas, respectively, are provided.
【００４２】また、活性種生成室２ａには、混合ガス配
管１３から導出された水素窒素系ガスを活性化すること
により生成した活性種を処理室１側に送出する為のガス
導入配管１８も接続されている。このガス導入配管１８
は、一端が活性種生成室２ａに接続され、他端が活性種
供給口５に接続されている。ガス導入配管１８の途中に
は、ＮＦ3配管１９が接続されている。ＮＦ3配管１９
は、一端がガス導入配管１８の途中に接続され、他端が
ＮＦ3の流量を制御するMFC２０を介してＮＦ3ガス源２
１に接続されている。The active species generation chamber 2 a also has a gas introduction pipe 18 for sending out active species generated by activating the hydrogen-nitrogen-based gas derived from the mixed gas pipe 13 to the processing chamber 1. It is connected. This gas introduction pipe 18
Has one end connected to the active species generation chamber 2 a and the other end connected to the active species supply port 5. An NF 3 pipe 19 is connected in the middle of the gas introduction pipe 18. NF 3 piping 19
Has one end connected to the middle of the gas introduction pipe 18, NF 3 gas source 2 via the MFC20 other end to control the flow rate of NF 3
1
【００４３】図３は、ＮＦ3配管１９周りの構成を拡大
して示したもので、同図に示すように、ＮＦ3ガスをプ
ラズマ化された窒素水素系ガスに添加するに当っては、
単にＮＦ3ガスをプラズマ化された窒素水素系ガス(活性
ガス)に合流させるのではなく、ＮＦ3配管１９からのＮ
Ｆ3ガスを、上流側すなわち活性ガスの流れに逆らう方
向(活性種生成室２ａ側に向かう方向)に向けて導出させ
るのが好ましい。これにより、流下しようとする活性ガ
スの原子とＮＦ3分子とを効率的に衝突させることがで
きるから、Ｆラジカルを効率的に励起できる。FIG. 3 is an enlarged view of the configuration around the NF 3 pipe 19. As shown in FIG. 3, when adding the NF 3 gas to the plasma-generated nitrogen-hydrogen-based gas,
Rather than simply to merge the NF 3 gas to the plasma nitrogen hydrogen-based gas (inert gas), N from NF 3 pipe 19
It is preferable that the F 3 gas is led out toward the upstream side, that is, in the direction against the flow of the active gas (the direction toward the active species generation chamber 2a side). Thereby, the atoms of the active gas to flow down can be efficiently collided with the NF 3 molecules, so that the F radicals can be efficiently excited.
【００４４】またガス導入配管１８は、水平方向(ウエ
ハＷの平坦面と平行な方向)に延在していて、このガス
導入配管１８から導出された活性種は、活性種供給口５
からサイドフローでウエハＷに供給されるように構成さ
れている。このような構成とすることにより、仮にリモ
ートプラズマユニット２側でパーティクルが発生して
も、そのパーティクルがウエハＷ表面に降り落ちないよ
うになっている。The gas introduction pipe 18 extends in a horizontal direction (a direction parallel to the flat surface of the wafer W), and the active species derived from the gas introduction pipe 18 is supplied to the active species supply port 5.
, And is supplied to the wafer W in a side flow. With such a configuration, even if particles are generated on the remote plasma unit 2 side, the particles do not fall down on the surface of the wafer W.
【００４５】以上のように構成されたドライクリーニン
グ装置の作用は次の通りである。まず、図示せぬ搬送装
置または人手により、ウエハＷをウエハ載置台７上に載
せる。このとき、リフトピン１１１ａ,１１１ｂ…はウ
エハ載置面から退避しており、ウエハＷはウエハ載置台
７に直接接した状態で載置される。ウエハ載置台７は熱
伝導率の高い素材で構成されており、載置台冷却機構９
によって20℃以下の温度に制御されるから、このウエハ
載置台７に接触したウエハＷを速やかに冷却できる。さ
らにこのとき、処理室１の内壁は、処理室冷却機構４に
よって20℃以下に冷却されている。The operation of the dry cleaning apparatus configured as described above is as follows. First, the wafer W is placed on the wafer mounting table 7 by a transfer device (not shown) or manually. At this time, the lift pins 111a, 111b,... Are retracted from the wafer mounting surface, and the wafer W is mounted in a state of being in direct contact with the wafer mounting table 7. The wafer mounting table 7 is made of a material having high thermal conductivity, and the mounting table cooling mechanism 9
Thus, the wafer W in contact with the wafer mounting table 7 can be quickly cooled. Further, at this time, the inner wall of the processing chamber 1 is cooled to 20 ° C. or lower by the processing chamber cooling mechanism 4.
【００４６】ウエハＷを載置した後、Ｎ2ガス源１４か
らＮ2配管１３ａに供給されたＮ2ガスと、Ｈ2ガス源１
５からＨ2配管１３ｂに供給されたＨ2ガスとが混合ガス
配管１３で合流し、それらの混合ガス(水素窒素系ガス)
が活性種生成室２ａを経由してガス導入配管１８に送出
される。また、送出された水素窒素系ガスに、ＮＦ3ガ
ス源２１から供給されたＮＦ3ガスが合流し、これらの
混合ガスが処理室１内に供給される。これにより、Ｎ2,
Ｈ2,ＮＦ3のフローが始まり、処理室１内はただちに所
定の処理圧力に制御される。なお、Ｎ2,Ｈ2,ＮＦ3ガス
の供給量は、それぞれMFC１６,１７,２０により独立に
制御される。[0046] After placing the the wafer W, and N 2 gas supplied to the N 2 pipe 13a from the N 2 gas source 14, H 2 gas source 1
5 and the H 2 gas supplied to the H 2 pipe 13b merge in the mixed gas pipe 13, and the mixed gas (hydrogen-nitrogen based gas)
Is sent to the gas introduction pipe 18 via the active species generation chamber 2a. Further, the hydrogen nitrogen-based gas delivered, NF 3 and merging NF 3 gas supplied from the gas source 21, a mixed gas is supplied into the processing chamber 1. This allows N 2 ,
The flow of H 2 and NF 3 starts, and the inside of the processing chamber 1 is immediately controlled to a predetermined processing pressure. The supply amounts of the N 2 , H 2 , and NF 3 gases are independently controlled by the MFCs 16, 17, and 20, respectively.
【００４７】処理室１内が所定圧力に制御された後、μ
波電源２ｃからμ波を発生させる。発生したμ波は、導
波管２ｂを伝わり、活性種生成室２ａに至る。活性種生
成室２ａでは、μ波電源２ｃから導波したμ波によって
水素窒素系ガスが活性化(プラズマ化)され、その活性ガ
スがガス導入配管１８に送出される。活性ガスが処理室
１に向かってガス導入配管１８を流れる過程で、当該活
性ガスにＮＦ3ガスが添加される。これにより、ＮＦ3ガ
スも活性化され、その活性種(Ｆラジカル)が発生し、当
該活性種が活性種供給口５から処理室１内に供給され
る。After the inside of the processing chamber 1 is controlled to a predetermined pressure, μ
A μ-wave is generated from the wave power supply 2c. The generated microwave propagates through the waveguide 2b and reaches the active species generation chamber 2a. In the active species generation chamber 2 a, the hydrogen-nitrogen-based gas is activated (plasmaized) by the μ-wave guided from the μ-wave power supply 2 c, and the activated gas is sent to the gas introduction pipe 18. While the active gas flows through the gas introduction pipe 18 toward the processing chamber 1, NF 3 gas is added to the active gas. As a result, the NF 3 gas is also activated, and its active species (F radicals) are generated, and the active species is supplied from the active species supply port 5 into the processing chamber 1.
【００４８】このとき、処理室１の内壁が20℃以下に冷
却されているから、活性種がウエハＷ上の酸化膜に至る
過程で当該活性種も処理室１の内壁によって間接的に冷
却される。また、活性種が供給されているとき、回転機
構６がウエハ載置台５を回転させることにより、ウエハ
Ｗの平坦面に均等に活性種を供給できる。そして、活性
種が処理室１内に配置されたウエハＷ表面の酸化膜と反
応して副生成物が形成される（副生成物生成工程）。At this time, since the inner wall of the processing chamber 1 is cooled to 20 ° C. or less, the active species is also indirectly cooled by the inner wall of the processing chamber 1 while the active species reaches the oxide film on the wafer W. You. When the active species is supplied, the rotation mechanism 6 rotates the wafer mounting table 5 so that the active species can be uniformly supplied to the flat surface of the wafer W. Then, the active species reacts with the oxide film on the surface of the wafer W disposed in the processing chamber 1 to form a by-product (by-product generation step).
【００４９】このようにして、ウエハＷ上に副生成物を
形成したならば、上記各ガスの供給を断つと共にプラズ
マの形成を停止し、処理室１内の残留ガスを排気管８か
ら排気する。When the by-products are formed on the wafer W in this manner, the supply of each of the above-mentioned gases is stopped, the formation of plasma is stopped, and the residual gas in the processing chamber 1 is exhausted from the exhaust pipe 8. .
【００５０】次いで、図２に示すように、ピン支持部１
１２が上昇することにより、リフトピン１１１ａ,１１
１ｂ…によってウエハＷをランプ３側に持ち上げる。こ
れにより、ウエハＷはウエハ載置台７から離される。そ
してウエハＷが、ランプ３に対面する窓１０近傍の位置
まで持ち上げられた後、ランプ３から窓９を通してウエ
ハＷに赤外線を照射することにより、該ウエハＷを100
℃以上に加熱する。Next, as shown in FIG.
12 rises, the lift pins 111a, 11
1b lifts the wafer W to the lamp 3 side. As a result, the wafer W is separated from the wafer mounting table 7. After the wafer W is lifted to a position near the window 10 facing the lamp 3, the wafer W is irradiated with infrared rays from the lamp 3 through the window 9 so that the wafer W
Heat above ℃.
【００５１】このとき、ウエハＷはウエハ載置台７から
離されているから、ランプ３によるウエハＷの加熱効果
が、載置台冷却機構９による冷却効果によって減殺され
ることはない。また、このときウエハＷは、真空中にて
ランプ照射されるため、これを迅速に加熱できる。ラン
プ３によってウエハＷを加熱しているときにも、ウエハ
載置台７、及び処理室１の内壁は、それぞれ載置台冷却
機構９、処理室冷却機構４によって冷却され続ける。At this time, since the wafer W is separated from the wafer mounting table 7, the effect of heating the wafer W by the lamp 3 is not reduced by the cooling effect of the mounting table cooling mechanism 9. At this time, since the wafer W is irradiated with a lamp in a vacuum, the wafer W can be quickly heated. Even when the wafer W is heated by the lamp 3, the wafer mounting table 7 and the inner wall of the processing chamber 1 are continuously cooled by the mounting table cooling mechanism 9 and the processing chamber cooling mechanism 4, respectively.
【００５２】なお、ランプ照射時にもウエハＷを回転さ
せてもよい。回転機構部８によってウエハ載置台７が回
転されるときには、ピン支持部１１２も同時に回転さ
れ、これによって、リフトピン１１１ａ,１１１ｂ…に
よって支持されたウエハＷが回転するようになってい
る。It is to be noted that the wafer W may be rotated at the time of lamp irradiation. When the wafer mounting table 7 is rotated by the rotation mechanism 8, the pin support 112 is simultaneously rotated, whereby the wafer W supported by the lift pins 111a, 111b... Is rotated.
【００５３】これにより、ウエハＷ表面に形成された副
生成物が昇華し、昇華した副生成物は排気口６から排気
される。結果として、ウエハＷの表面に形成されていた
酸化膜が除去されることとなる(副生成物除去工程)。そ
の後、処理済みウエハＷをウエハ載置台７から搬出す
る。Thus, the by-product formed on the surface of the wafer W is sublimated, and the sublimated by-product is exhausted from the exhaust port 6. As a result, the oxide film formed on the surface of the wafer W is removed (by-product removal step). After that, the processed wafer W is unloaded from the wafer mounting table 7.
【００５４】以上説明した副生成物生成工程と、副生成
物除去工程とを交互に行うことにより、本ドライクリー
ニングを連続的に行える。The dry cleaning can be continuously performed by alternately performing the by-product generation step and the by-product removal step described above.
【００５５】このドライクリーニング装置によれば、次
のような効果が得られる。
(1)副生成物生成工程と副生成物除去工程とを共に、処
理室１の内壁及びウエハ載置台７を冷却しつつ行うか
ら、これら処理室１及びウエハ載置台７を終始20℃以下
に維持できる。そして副生成物生成工程では、ウエハＷ
を20℃以下に冷却されたウエハ載置台７に接触させると
共に、ウエハＷ表面の酸化膜には、処理室１の内壁によ
って間接的に冷却された活性種が供給されるから、副生
成物の生成時間を短縮できる。一方、副生成物除去工程
では、ウエハＷがウエハ昇降機構１１によってウエハ載
置台７から離されると共に、このときウエハＷはリフト
ピンのみによって点接触で支持されるから、ウエハＷの
熱容量を見かけ上、小さくできる。従って、ランプ３に
よってウエハＷを短時間で加熱でき、副生成物の昇華時
間を短縮できる。以上により、本ドライクリーニング法
を用いた枚葉プロセスの連続処理を効率的に行える。さ
らに、そのような連続処理を同一の処理室１にて行える
から、フットプリントを小さくできる。According to this dry cleaning device, the following effects can be obtained. (1) Since both the by-product generation step and the by-product removal step are performed while cooling the inner wall of the processing chamber 1 and the wafer mounting table 7, the temperature of the processing chamber 1 and the wafer mounting table 7 is kept at 20 ° C. or less throughout. Can be maintained. In the by-product generation step, the wafer W
Is brought into contact with the wafer mounting table 7 cooled to 20 ° C. or less, and an active species indirectly cooled by the inner wall of the processing chamber 1 is supplied to the oxide film on the surface of the wafer W. Generation time can be reduced. On the other hand, in the by-product removal step, the wafer W is separated from the wafer mounting table 7 by the wafer lifting / lowering mechanism 11, and at this time, the wafer W is supported in point contact only by the lift pins. Can be smaller. Therefore, the wafer W can be heated by the lamp 3 in a short time, and the sublimation time of the by-product can be reduced. As described above, the continuous processing of the single wafer process using the dry cleaning method can be efficiently performed. Further, since such continuous processing can be performed in the same processing chamber 1, the footprint can be reduced.
【００５６】(2)副生成物除去工程においてウエハＷ上
の副生成物を加熱するときには、単にウエハＷをウエハ
載置台７から離すだけではなく、該ウエハＷをランプ３
近傍位置まで持ち上げることにより、ウエハＷ表面の副
生成物のみを急速に加熱できる一方、ランプ３からの赤
外線がウエハＷによって殆ど遮られるから、処理室１内
壁及びウエハ載置台７に赤外線が照射されるのを最小限
に抑制できる。これにより、本ドライクリーニング処理
のスループットを一層向上できる。(2) When heating the by-products on the wafer W in the by-product removal step, the wafer W is not merely separated from the wafer mounting table 7 but is
By raising the wafer W to a nearby position, only the by-products on the surface of the wafer W can be rapidly heated, but the infrared rays from the lamp 3 are almost blocked by the wafer W, so that the inner wall of the processing chamber 1 and the wafer mounting table 7 are irradiated with the infrared rays. Can be minimized. Thus, the throughput of the dry cleaning process can be further improved.
【００５７】(3)特に、処理ガスの活性種をサイドフロ
ーでウエハＷに供給する構成であるから、ダウンフロー
で活性種を供給する場合等に比べると処理室１の全高を
低くできる。これにより、ウエハＷをランプ３近傍位置
にまで持ち上げることが実現される。具体的には、本ド
ライクリーニング装置では、副生成物除去工程におい
て、ランプ３とウエハＷとの距離を5〜10ｃｍ、窓１０
とウエハＷとの距離を3ｃｍ程度にまで短縮できる。ま
た、そのようなウエハＷの昇降を短いストロークで行え
るから、ウエハＷの昇降を迅速に行える。以上のよう
に、本実施の形態においては、活性種をサイドフローで
供給する構成と処理室冷却機構４とが相まって、本ドラ
イクリーニング処理の一層効率的な連続処理を実現して
いる。(3) Particularly, since the active species of the processing gas is supplied to the wafer W by the side flow, the overall height of the processing chamber 1 can be reduced as compared with the case where the active species is supplied by the down flow. Thus, the wafer W is lifted up to the position near the lamp 3. Specifically, in the present dry cleaning apparatus, in the by-product removal step, the distance between the lamp 3 and the wafer W is 5 to 10 cm,
The distance between the wafer and the wafer W can be reduced to about 3 cm. Further, since the wafer W can be moved up and down in a short stroke, the wafer W can be moved up and down quickly. As described above, in this embodiment, the configuration for supplying the active species by the side flow and the processing chamber cooling mechanism 4 combine to realize a more efficient continuous process of the dry cleaning process.
【００５８】(4)上記ドライクリーニング装置は、加熱
手段が基板の被処理面に対向配置されていると共に、活
性化手段により活性化された処理ガスの活性種が基板の
被処理面にわたり当該被処理面と平行な方向にサイドフ
ローで供給されるように構成されているが、処理室１内
壁を冷却することにより、副生成物除去工程では、当該
内壁を介して間接的に冷却された活性種が、熱蓄積され
やすい窓３を含む加熱手段周辺部材からの熱輻射を遮る
ようにして基板の被処理面に供給されるから、熱輻射を
遮るための遮蔽板等を必要とせずに、簡素な構成で基板
の温度上昇を防止できる。(4) In the dry cleaning apparatus, the heating means is arranged to face the surface to be processed of the substrate, and the active species of the processing gas activated by the activating means extends over the surface to be processed of the substrate. Although it is configured to be supplied in a side flow in a direction parallel to the processing surface, by cooling the inner wall of the processing chamber 1, in the by-product removal step, the indirectly cooled active material is cooled through the inner wall. Since the seeds are supplied to the surface to be processed of the substrate so as to block the heat radiation from the surrounding member of the heating means including the window 3 in which heat is easily accumulated, there is no need for a shielding plate or the like for blocking the heat radiation. With a simple configuration, it is possible to prevent a rise in the temperature of the substrate.
【００５９】上記ドライクリーニング装置を用いた一実
施例においては次のような効果が得られた。
(5)シリコン基板の自然酸化膜を除去する場合、自然酸
化膜とシリコン下地との間のエッチング選択比を12倍以
上とすることができた。
(6)複数回の連続処理を行った後、処理室１内の石英部
材(例えば、ウエハ載置台７等)を精密に観察したとこ
ろ、これに何らの損傷も認められなかった。これは、処
理室１の壁面およびウエハ載置台を冷却したことによ
り、石英部材の熱劣化が防止されたためであると考えら
れる。これにより、石英部材の長寿命化が期待できる。
一方、自然酸化膜は10Å/分以上のエッチングレートで
削ることができた。
(7)従来5分要していた基板の処理時間を、3分以内に短
縮できた。In the embodiment using the above dry cleaning device, the following effects were obtained. (5) When the natural oxide film on the silicon substrate was removed, the etching selectivity between the natural oxide film and the silicon underlayer could be made 12 times or more. (6) After performing the continuous processing a plurality of times, the quartz member (for example, the wafer mounting table 7 or the like) in the processing chamber 1 was precisely observed, and no damage was found on the quartz member. This is presumably because the cooling of the wall surface of the processing chamber 1 and the wafer mounting table prevented the thermal degradation of the quartz member. As a result, a longer life of the quartz member can be expected.
On the other hand, the native oxide film could be etched at an etching rate of 10 ° / min or more. (7) The processing time for substrates, which conventionally required 5 minutes, can be reduced to 3 minutes or less.
【００６０】以上、本発明の好適な実施の形態について
説明したが、本発明はこれに限られない。例えは、本発
明の処理室冷却手段としては、処理室１の壁に沿って冷
媒を巡回させる処理室冷却機構４に限定されるものでは
なく、処理室冷却機構４に代えて、又は処理室冷却機構
４と共に処理室１の外壁に放熱用フィンを設けることと
してもよい。この場合は、放熱用フィンを空冷するとな
およい。また、ガス導入配管１８からの活性種を、予備
室を介して処理室内１に導入する場合には、その予備室
の内壁を冷却する予備室冷却手段を備えるとよい。ま
た、活性種生成室２ａで生成するプラズマを失活させな
い範囲でガス導入配管１８を冷却することにより、該プ
ラズマ中で励起された活性種を冷却できる。Although the preferred embodiment of the present invention has been described, the present invention is not limited to this. For example, the processing chamber cooling means of the present invention is not limited to the processing chamber cooling mechanism 4 that circulates the refrigerant along the wall of the processing chamber 1, but instead of the processing chamber cooling mechanism 4 or the processing chamber. Radiation fins may be provided on the outer wall of the processing chamber 1 together with the cooling mechanism 4. In this case, it is more preferable to cool the heat radiation fins by air. When the active species from the gas introduction pipe 18 is introduced into the processing chamber 1 via the preliminary chamber, a preliminary chamber cooling means for cooling the inner wall of the preliminary chamber may be provided. In addition, by cooling the gas introduction pipe 18 within a range that does not deactivate the plasma generated in the active species generation chamber 2a, the active species excited in the plasma can be cooled.
【００６１】その他、ドライクリーニング装置の細部構
成および動作に関しては本発明の趣旨を逸脱しない範囲
で設計変更可能である。例えば、リモートプラズマユニ
ット２は、RF波を発生する高周波発生源と誘導コイルと
により構成して、RF波によりプラズマを発生させるよう
にしてもよい。実施の形態においては本ドライクリーニ
ング処理を連続的に行う場合について説明したが、酸化
膜が除去された時点においては、処理室１内を真空また
は非反応性雰囲気状態とすることができるから、本ドラ
イクリーニング処理後に新たな自然酸化膜が発生するこ
とはなく、後の工程までの時間的制約をなくすことがで
き、工程設計の自由度が広がる。また、処理室１と成膜
等の後処理用の処理室とを連結することにより、処理済
みウエハを一旦大気に暴露することなく後処理を行え
る。また、本発明はウエハを含む基板のみならず、酸化
膜その他の汚染物が形成された被処理体一般の前処理に
広く適用できる。In addition, the detailed configuration and operation of the dry cleaning device can be changed in design without departing from the gist of the present invention. For example, the remote plasma unit 2 may be configured with a high-frequency generation source that generates an RF wave and an induction coil, and generate plasma using the RF wave. In the embodiment, the case where the dry cleaning process is continuously performed has been described. However, when the oxide film is removed, the inside of the processing chamber 1 can be brought into a vacuum or a non-reactive atmosphere state. No new natural oxide film is generated after the dry cleaning process, so that the time restriction to the subsequent process can be eliminated, and the degree of freedom in the process design can be increased. Further, by connecting the processing chamber 1 to a processing chamber for post-processing such as film formation, post-processing can be performed without once exposing the processed wafer to the atmosphere. In addition, the present invention can be widely applied not only to a substrate including a wafer but also to general pretreatment of an object on which an oxide film and other contaminants are formed.
【００６２】[0062]
【発明の効果】本発明によれば、上記ドライクリーニン
グ法において副生成物を効率的に生成できるようにな
る。また本発明によれば、上記ドライクリーニング法の
連続処理を効率的に行えるようになる。According to the present invention, by-products can be efficiently generated in the dry cleaning method. Further, according to the present invention, the continuous processing of the dry cleaning method can be efficiently performed.
【図１】実施の形態によるドライクリーニング装置の構
成を示したもので、同装置によって副生成物生成工程を
実施している状態を示す図である。FIG. 1 is a view showing a configuration of a dry cleaning apparatus according to an embodiment and showing a state in which a by-product generation step is being performed by the apparatus.
【図２】実施の形態によるドライクリーニング装置の構
成を示したもので、同装置によって副生成物除去工程を
実施している状態を示す図である。FIG. 2 is a view showing a configuration of a dry cleaning apparatus according to an embodiment, and showing a state in which a by-product removing step is being performed by the apparatus.
【図３】ＮＦ3配管まわりの構成を拡大して示した図で
ある。FIG. 3 is an enlarged view of a configuration around an NF 3 pipe.
１…処理室、２…リモートプラズマユニット(活性化手
段)、３…ランプ(加熱手段)、４…処理室冷却機構(処理
室冷却手段)。DESCRIPTION OF SYMBOLS 1 ... Processing chamber, 2 ... Remote plasma unit (activation means), 3 ... Lamp (heating means), 4 ... Processing chamber cooling mechanism (processing chamber cooling means).
Claims (2)
り活性化させる活性化手段と、 前記処理室内の基板を加熱する加熱手段と、を備え、 前記活性化手段により活性化された処理ガスの活性種を
前記処理室内の基板へ供給することで当該基板上に副生
成物を生じさせ、次いで当該基板を前記加熱手段により
加熱することで前記副生成物を除去する基板処理装置で
あって、 前記処理室の内壁を冷却する処理室冷却手段を備えたこ
とを特徴とする基板処理装置。1. A processing chamber for processing a substrate, activation means for activating a processing gas used for processing the substrate by plasma, and heating means for heating a substrate in the processing chamber, The by-products are generated on the substrate by supplying the activated species of the processing gas activated by the activating means to the substrate in the processing chamber, and then the by-product is generated by heating the substrate by the heating means. A substrate processing apparatus for removing an object, comprising: a processing chamber cooling unit configured to cool an inner wall of the processing chamber.
ズマにより活性化させて得た活性種を、処理室内の前記
基板へ供給することで当該基板上に副生成物を生じさせ
る副生成物生成工程と、 次いで、前記処理室内の基板を所定の温度に加熱するこ
とで前記副生成物を除去する副生成物除去工程と、を有
する半導体装置の製造方法であって、 前記副生成物生成工程と前記副生成物除去工程とは、共
に前記処理室の内壁を冷却しつつ行うことを特徴とする
半導体装置の製造方法。2. A by-product that generates a by-product on the substrate by supplying an active species obtained by activating a processing gas used for processing the substrate with plasma to the substrate in the processing chamber. A by-product removing step of removing the by-product by heating a substrate in the processing chamber to a predetermined temperature. The method of manufacturing a semiconductor device, wherein both the step and the by-product removal step are performed while cooling an inner wall of the processing chamber.
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|---|---|---|---|
| JP2002149020A JP2003347278A (en) | 2002-05-23 | 2002-05-23 | Substrate treatment apparatus and method for manufacturing semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002149020A JP2003347278A (en) | 2002-05-23 | 2002-05-23 | Substrate treatment apparatus and method for manufacturing semiconductor device |
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|---|---|
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ID=29767339
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