JP2003342717A - Vacuum arc deposition system and film deposition method using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To increase the deposition rate of a film reduced in macroparticles and to maintain stable vacuum arc discharge for a long period of time even in the case of deposition of an insulating film. <P>SOLUTION: A first air-core coil 6 is disposed nearly coaxially with an evaporation surface 5A between an evaporation material 5 and a substrate S. A second air-core coil 7 is disposed around the evaporation material 5 nearly coaxially with the evaporation surface 5A. The lines X2 of magnetic force of the second air-core coil 7 are set in such a way that they extend, at the evaporation surface 5A, in a direction nearly orthogonal to the evaporation surface 5A with the approach to the forward side or in a diameter direction scattering outward with the approach to the forward side. A third coil 8 is disposed behind the evaporation material 5 nearly coaxially with the evaporation surface 5A. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum arc type vapor deposition apparatus used for forming an insulating film on the surface of a cutting tool or the like.

[0002]

2. Description of the Related Art Conventionally, a film forming material is evaporated from the evaporation surface of an evaporating material by a vacuum arc discharge to generate a plasma containing film forming material ions, and the film forming material ions in the plasma are reacted with a reactive gas. A vacuum arc type vapor deposition apparatus for vapor-depositing an insulative substance obtained by reacting with a substrate is generally well known. By the way, when the film-forming material is evaporated from the evaporation surface of the evaporation material by the vacuum arc discharge, macro particles, which are fine molten particles of the film-forming material substance, are emitted from the arc spot formed on the evaporation surface. However, if these macro particles are mixed in the film to be formed, not only will the smoothness of the film be impaired, but also the adhesion will be reduced and the film will be easily peeled off. It is required to reduce the amount as much as possible.

Based on such requirements, for example, a vacuum arc system vapor deposition apparatus as disclosed in Japanese Patent Laid-Open No. 2-194167 has been proposed. This is one in which a vacuum arc evaporation source is attached to the opening at a predetermined position of the vacuum chamber. Is accommodated so that the evaporating material has its substantially circular evaporation surface facing the substrate side. An air-core coil is arranged substantially coaxially with the evaporation surface of the evaporation material so as to be located between the evaporation material and the base material, and the magnetic force lines of the air-core coil are located on the front side (base material side) from the evaporation surface. Toward the inside of the vacuum chamber, they converge once and then diverge outward in the radial direction.

In such a vacuum arc type vapor deposition apparatus,
The vacuum arc discharge evaporates the film-forming material from the evaporation surface of the evaporating material to generate plasma containing film-forming material ions, and the plasma is induced by the magnetic field lines of the air-core coil to the substrate arranged in the vacuum chamber. To be done. A reactive gas is introduced into the same vacuum chamber in advance, and the reactive gas reacts with the ions of the film-forming material substance in the plasma to form a film on the surface of the substrate. At this time, since the macroparticles without electric charge emitted from the arc spot by the vacuum arc discharge do not receive the induction effect by the magnetic field lines of the air-core coil, by using magnetic field lines that converge and then diverge, It is possible to selectively guide the film forming material substance ions to the particles to the substrate,
Macro particles mixed in the film formed on the surface of the substrate are reduced.

[0005]

However, in the vacuum arc type vapor deposition apparatus as described above, the air-core coil for generating the magnetic force lines for inducing the plasma containing the film-forming material substance ions is provided between the evaporation material and the substrate. Since it is arranged in the above, the gap between the evaporation material and the substrate is inevitably large, and the generated plasma cannot be efficiently guided and guided to the substrate, so that a sufficient film formation rate can be obtained. It was difficult to improve productivity.

When forming a film on the surface of the substrate, a reactive gas is introduced into the vacuum chamber, and an insulating substance formed by reacting the reactive gas with the ions of the film-forming material in the plasma is deposited on the surface of the substrate. When reactive coating such as vapor deposition to form an insulating film is performed, in the arrangement of the air-core coil as in the above-mentioned vacuum arc vapor deposition apparatus, the magnetic lines of force on the evaporation surface are in front of this evaporation surface. The discharge from the outer peripheral portion of the evaporation surface is reduced, and the evaporation surface is gradually covered with the insulating material from the outer peripheral portion, because the discharge surface is set to extend in the radial inward direction. After a while, there was a problem that the vacuum arc discharge would not continue.

As disclosed in Japanese Patent Application Laid-Open No. 11-36063, an air-core coil is arranged around the evaporation material so that the evaporation surface extends in a direction substantially orthogonal to the evaporation surface toward the front side. To, or
There is also a vacuum arc system vapor deposition device that produces magnetic lines of force that extend in a direction that diverges outward in the radial direction as it goes to the front side, but even if this is used, the film formation rate is not sufficiently obtained. The problem remains.

The present invention has been made in view of the above problems, and it is possible to increase the film formation rate of a film containing few macro particles and to maintain a stable vacuum arc discharge for a long time even when forming an insulating film. It is an object of the present invention to provide a vacuum arc vapor deposition apparatus that can be used and a film forming method using the same.

[0009]

[Means for Solving the Problems] By solving the above problems,
In order to achieve such an object, the vacuum arc vapor deposition apparatus according to the present invention, by vacuum arc discharge, to evaporate the film-forming material from the evaporation surface of the evaporation material to generate plasma containing film-forming material substance ions, A vacuum arc vapor deposition apparatus for depositing an insulating substance formed by reacting the film-forming material substance ions in this plasma with a reactive gas, wherein the vapor arc type vapor deposition device comprises: The first air-core coil is arranged substantially coaxially with the evaporation surface, and the second air-core coil is arranged substantially coaxially with the evaporation surface around the evaporation material. The magnetic field lines of the coil extend in the evaporation surface in a direction substantially orthogonal to the evaporation surface as it goes toward the front side.
Alternatively, it is characterized in that it is set so as to extend in a direction diverging outward in the radial direction toward the front side. With such a configuration, since the first air-core coil is arranged between the evaporating material and the substrate, the induction effect of the magnetic field lines of the first air-core coil causes
It is possible to selectively guide the film forming material ions to the substrate with respect to the macroparticles having no electric charge, and reduce the macroparticles mixed in the film formed on the surface of the substrate. In addition, the second air-core coil is arranged around the evaporating material, and the magnetic field lines thereof extend in a direction substantially orthogonal to the evaporating surface on the evaporating surface toward the front side, or toward the front side. Since it is set to extend outward in the radial direction, the discharge from the outer peripheral part of the evaporation surface does not decrease, and this evaporation surface is gradually covered by the insulating material from the outer peripheral part. Therefore, stable vacuum arc discharge can be continued for a long time. Further, the generated plasma is efficiently guided to the base body by the magnetic field lines of the second air-core coil arranged around the evaporation material and the first air-core coil arranged between the evaporation material and the base material. Therefore, it is possible to increase the film formation rate.

Further, in the present invention, it is preferable that a third coil is disposed behind the evaporation material in a substantially coaxial manner with the evaporation surface. With such a configuration, the third coil is arranged. By moving the arc spot due to the vacuum arc discharge at a high speed on the evaporation surface by the magnetic lines of force, the evaporation material can be efficiently consumed.

The film forming method according to the present invention is characterized in that an insulating film is formed on the surface of a substrate by using the vacuum arc system vapor deposition apparatus of the present invention. In addition to increasing the speed, stable vacuum arc discharge can be maintained for a long time even when forming an insulating film.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic explanatory diagram of a vacuum arc type vapor deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 1, in the vacuum arc vapor deposition apparatus according to the present embodiment, a vacuum arc vaporization source 10 is provided at an opening formed in a predetermined position of a vacuum chamber 1 in which a substrate S is accommodated. The vacuum arc evaporation source 10 is attached to the small diameter portion 2 having a substantially cylindrical shape.
And a large-diameter portion 3 having a substantially cylindrical shape and connected to the outside of the small-diameter portion 2 so as to expand the diameter by one step (small-diameter portion 2
And a large-diameter portion 3 having a substantially multi-stage cylindrical plasma duct), and the small-diameter portion 2 has the above-mentioned vacuum chamber 1
Is attached to the opening.

On the side of the large-diameter portion 3 opposite to the connecting portion with the small-diameter portion 2, a substantially disc-shaped holder 4 is mounted via a substantially ring-shaped insulating member (not shown). Further, in the center portion of the holder 4, for example, Al having a substantially disc shape is formed.
Since the evaporation material 5 made of, for example, is attached, the evaporation material 5 is housed in the large-diameter portion 3 such that the substantially circular evaporation surface 5A faces the vacuum chamber 1 side. In addition, the axis O of the evaporation surface 5A having the substantially circular shape
Is extended toward the front side of the evaporation surface 5A, it passes through the centers of the large diameter portion 3 and the small diameter portion 2 to reach the vicinity of the substrate S housed in the vacuum chamber 1,
The substrate S is located near the axis O of the evaporation surface 5A. In reality, the substrate S contained in the vacuum chamber 1
Can be rotated about a point on the axis O, and are arranged so as to pass on the axis O during this rotation.

The vacuum chamber 1 is connected to the plus side of an arc power source (not shown), and the holder 4 is connected to the minus side of the arc power source, whereby the vacuum chamber 1 and this vacuum chamber 1 are connected. A vacuum arc discharge is performed in which the small-diameter portion 2 and the large-diameter portion 3 having the same potential are used as an anode and the evaporation material 5 attached to the holder 4 is used as a cathode.

On the outer peripheral side of the small-diameter portion 2 having a substantially cylindrical shape, the small-diameter portion 2 is positioned so as to circulate the small-diameter portion 2, that is, between the evaporation material 5 and the substrate S housed in the vacuum chamber 1. So that the first air-core coil 6 has a substantially ring shape.
However, the axis line thereof is arranged to be substantially coincident with the axis line O of the evaporation surface 5A. A magnetic field line X1 generated when an exciting current is passed through the first air-core coil 6 is located in front of the evaporation surface 5A, toward the front side in the direction of the axis O (from the evaporation surface 5A toward the substrate S side. ), Small diameter part 2
It is set so that it converges from the front side, passes through the small diameter portion 2, and then diverges outward in the radial direction to reach the inside of the vacuum chamber 1.

On the outer peripheral side of the large-diameter portion 3 having a substantially cylindrical shape, a substantially ring-like shape is formed so as to circulate the outermost portion of the large-diameter portion 3, that is, around the evaporation material 5. The second air-core coil 7 is arranged so that its axis is substantially aligned with the axis O of the evaporation surface 5A. A magnetic field line X2 generated when an exciting current is passed through the second air-core coil 7 extends in the evaporation surface 5A in a direction substantially orthogonal to the evaporation surface 5A as it goes from the evaporation surface 5A toward the front side in the direction of the axis O. Alternatively, it is set so as to extend in a direction diverging radially outward as it goes from the evaporation surface 5A toward the front side in the direction of the axis O.

Further, on the rear side of the evaporation material 5, that is, on the outer side of the holder 4 mounted on the large diameter portion 3, a third coil has its axis substantially aligned with the axis O of the evaporation surface 5A. It is arranged.

Although not shown, a mechanical arc ignition mechanism having a trigger electrode is connected to the positive side of the arc power source, and this trigger electrode is connected to the evaporation surface 5A of the evaporation material 5. , By contacting / non-contacting,
A vacuum arc discharge having an arc spot on the evaporation surface 5A is ignited. Further, although not shown, the vacuum chamber 1 is provided with a reactive gas introducing means for introducing a reactive gas such as N _2, and an exhausting means for keeping the inside of the vacuum chamber 1 at a predetermined vacuum degree. A bias power supply for applying a negative voltage to the substrate S is connected.

To form an insulating film on the surface of the substrate S using such a vacuum arc type vapor deposition apparatus, first,
After the inside of the vacuum chamber 1 is kept at a predetermined degree of vacuum by the exhaust means, the arc ignition mechanism is operated to ignite the vacuum arc discharge to generate the vacuum arc discharge with the evaporation material 5 as the cathode. 1, 2 coreless coils 6, 7
And, a direct-current exciting current is passed through the third air-core coil 8 to generate magnetic lines of force in these coils 6, 7, 8.

By passing an exciting current, the first air-core coil 6 arranged between the evaporation material 5 and the substrate S has a smaller diameter in front of the evaporation surface 5A toward the front side in the direction of the axis O. While converging from the front of part 2,
After passing through the small diameter portion 2, the magnetic force lines X1 are set so as to diverge outward in the radial direction and reach the inside of the vacuum chamber 1.

Similarly, when an exciting current is passed, the second air-core coil 7 arranged around the evaporating material 5 has an evaporating surface on the evaporating surface 5A from the evaporating surface 5A toward the front side in the direction of the axis O. The magnetic field lines X2 are set so as to extend in a direction substantially orthogonal to 5A or to extend outward in the radial direction along the direction from the evaporation surface 5A to the front side in the axis O direction.

Then, the plasma, which is generated by the vacuum arc discharge and is composed of the film forming material ions and electrons emitted from the arc spot formed on the evaporation surface 5A, has a small diameter along the magnetic lines X1 and X2. It passes through the inside of the portion 2 and is guided and guided by the substrate S. That is, the electrons are guided to the substrate S along the magnetic lines of force X1 and X2 so as to be wound around the magnetic lines of force, and the film-forming material ions also have a negative bias voltage applied by the flow of the electrons.
Is being led to.

The film forming material substance ions in the plasma react with the reactive gas introduced by the reactive gas introducing means into the vacuum chamber 1 to become an insulating substance, which is deposited on the surface of the substrate S. As a result, an insulating film such as AlN is formed on the surface of the substrate S.

According to the vacuum arc vapor deposition apparatus of the present embodiment having the above-mentioned structure, the evaporation material 5 and the substrate S are
Since the first air-core coil 6 is disposed between and, the magnetic field lines X1 are set to converge once from the front of the small diameter portion 2 and diverge after passing through the small diameter portion 2, Macro particles without electric charge are magnetic field lines X1
The straight traveling without receiving the guiding effect due to, most of them adhere to the large diameter portion 3, for example, and the amount reaching the substrate S decreases. That is, the amount of macro particles mixed in the insulating film formed on the surface of the substrate S can be reduced by selectively guiding the target material substance ions to the macro particles having no charge to the substrate S. It is possible to obtain an insulating film having improved surface smoothness.

Further, the second air-core coil 7 is arranged around the evaporation material 5, and the magnetic field line X2 thereof extends in the evaporation surface 5A in a direction substantially orthogonal to the evaporation surface 5A as it goes forward. , The discharge from the outer peripheral portion of the evaporation surface 5A having a substantially circular shape does not decrease because the evaporation surface 5A has a substantially circular shape and extends in the direction diverging outward in the radial direction. Since the outer peripheral portion is not gradually covered with the insulating material, stable vacuum arc discharge can be continued for a long time.

Further, the plasma generated by the vacuum arc discharge causes the second air-core coil 7 arranged around the evaporation material 5 and the first air-cooling coil arranged between the evaporation material 5 and the substrate S
Since the magnetic field lines X1 and X2 of the air-core coil 6 efficiently guide and guide them to the substrate S, it is possible to increase the deposition rate of the insulating film on the surface of the substrate S and to improve the productivity. You can

In addition, in the present embodiment, the evaporation material 5
By arranging the third coil 8 on the rear side of, the arc spot formed on the evaporation surface 5A by the vacuum arc discharge is rapidly generated on the evaporation surface 5A by the magnetic line of force of the third coil 8. Since it can be orbitally moved, the evaporation material 5 can be efficiently used.

As described above, when an insulating film is formed on the surface of the substrate S by using such a vacuum arc type vapor deposition apparatus, stable vacuum arc discharge can be continued for a long time, and Thus, it is possible to increase the film formation rate of the insulating film with less inclusion of macro particles.

[0030]

According to the present invention, since the first air-core coil is arranged between the evaporating material and the substrate, the magnetic field lines of the first air-core coil induce the macro effect that does not have electric charges. It is possible to selectively guide the film forming material substance ions to particles to the substrate, reduce macroparticles mixed in the film formed on the surface of the substrate, and form an insulating film having high smoothness. Further, the second air-core coil is arranged around the evaporation material, and the magnetic field lines thereof extend in a direction substantially orthogonal to the evaporation surface on the evaporation surface toward the front side, or the diameter of the magnetic field lines increases toward the front side. Since it is set to extend in the direction diverging outward, the discharge from the outer peripheral part of the evaporation surface does not decrease, and this evaporation surface may be gradually covered from the outer peripheral part by the insulating material. Therefore, stable vacuum arc discharge can be continued for a long time. Further, the generated plasma is efficiently guided to the base body by the magnetic lines of force of the second air-core coil arranged around the evaporation material and the first air-core coil arranged between the evaporation material and the base body. Since it is guided, it becomes possible to improve the productivity by increasing the film forming speed.

[Brief description of drawings]

FIG. 1 is a schematic explanatory view of a vacuum arc vapor deposition apparatus according to an embodiment of the present invention.

[Explanation of symbols]

1 vacuum chamber 2 Small diameter part 3 Large diameter part 4 holder 5 evaporation material 5A evaporation surface 6 First air-core coil 7 Second air-core coil 8 third coil 10 Arc type evaporation source O Axis of evaporation surface S substrate X1 Magnetic field line of the first coil X2 Magnetic field line of the second coil

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Akihiro Kondo             No.179 Kanegasaki Nishioike, Uozumi Town, Akashi City, Hyogo Prefecture             1 MC Kobelco Tool Co., Ltd.             Within (72) Inventor Yusuke Tanaka             No.179 Kanegasaki Nishioike, Uozumi Town, Akashi City, Hyogo Prefecture             1 MC Kobelco Tool Co., Ltd.             Within F-term (reference) 4K029 BA58 BD05 CA04 DD06

Claims (3)

[Claims] 1. A vacuum arc discharge evaporates a film-forming material from an evaporation surface of an evaporating material to generate plasma containing film-forming material substance ions, and the film-forming material substance ions in the plasma and a reactive gas. Is a vacuum arc vapor deposition apparatus for depositing an insulating substance obtained by reacting the above with a substrate, and a first air-core coil is arranged between the vaporizer and the substrate, substantially coaxially with the vaporization surface. In addition, a second air-core coil is arranged around the evaporation material substantially coaxially with the evaporation surface, and the magnetic lines of force of the second air-core coil are directed toward the front side on the evaporation surface. Therefore, it is set so as to extend in a direction substantially orthogonal to the evaporation surface, or to extend in a direction diverging outward in the radial direction as it goes forward. apparatus. 2. The vacuum arc vapor deposition apparatus according to claim 1, wherein a third coil is arranged behind the evaporation material substantially coaxially with the evaporation surface. Method vapor deposition equipment. 3. A film forming method, wherein an insulating film is formed on the surface of a substrate by using the vacuum arc vapor deposition apparatus according to claim 1 or 2.