[go: up one dir, main page]

JP2003334675A5 - - Google Patents

Download PDF

Info

Publication number
JP2003334675A5
JP2003334675A5 JP2003060324A JP2003060324A JP2003334675A5 JP 2003334675 A5 JP2003334675 A5 JP 2003334675A5 JP 2003060324 A JP2003060324 A JP 2003060324A JP 2003060324 A JP2003060324 A JP 2003060324A JP 2003334675 A5 JP2003334675 A5 JP 2003334675A5
Authority
JP
Japan
Prior art keywords
substrate
processing object
sheet
cutting
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003060324A
Other languages
Japanese (ja)
Other versions
JP4409840B2 (en
JP2003334675A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2003060324A priority Critical patent/JP4409840B2/en
Priority claimed from JP2003060324A external-priority patent/JP4409840B2/en
Publication of JP2003334675A publication Critical patent/JP2003334675A/en
Publication of JP2003334675A5 publication Critical patent/JP2003334675A5/ja
Application granted granted Critical
Publication of JP4409840B2 publication Critical patent/JP4409840B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【特許請求の範囲】
【請求項1】 基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせてレーザ光を照射し、前記基板の内部に多光子吸収による改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項2】 基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせて、集光点におけるピークパワー密度が1×10(W/cm)以上で且つパルス幅が1μs以下の条件でレーザ光を照射し、前記基板の内部にクラック領域を含む改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項3】 基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせて、集光点におけるピークパワー密度が1×10(W/cm)以上で且つパルス幅が1μs以下の条件でレーザ光を照射し、前記基板の内部に溶融処理領域を含む改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項4】 基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせて、集光点におけるピークパワー密度が1×10(W/cm)以上で且つパルス幅が1ns以下の条件でレーザ光を照射し、前記基板の内部に屈折率が変化した領域である屈折率変化領域を含む改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項5】 半導体材料からなる基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせて、集光点におけるピークパワー密度が1×10(W/cm)以上で且つパルス幅が1μs以下の条件でレーザ光を照射し、前記基板の内部に改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項6】 圧電材料からなる基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせて、集光点におけるピークパワー密度が1×10(W/cm)以上で且つパルス幅が1μs以下の条件でレーザ光を照射し、前記基板の内部に改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項7】 半導体材料からなる基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせてレーザ光を照射し、前記基板の内部に溶融処理領域を形成し、この溶融処理領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記加工対象物の前記表面側に第1のシートを貼り付ける第1の貼付工程と、
前記第1のシートを介して前記加工対象物を押圧する押圧工程とを備えることを特徴とする加工対象物切断方法。
【請求項】 前記切断起点領域形成工程では、前記基板の厚さ方向における中心位置から前記基板の裏面側に偏倚させて前記改質領域を形成することを特徴とする請求項1〜7のいずれか一項記載の加工対象物切断方法。
【請求項】 前記押圧工程では、前記切断予定ラインに沿って前記加工対象物を押圧することを特徴とする請求項1〜8のいずれか一項記載の加工対象物切断方法。
【請求項10】 前記切断起点領域形成工程では、前記加工対象物に対する前記切断予定ラインの位置データを記憶し、
前記押圧工程では、前記位置データに基づいて、前記切断予定ラインに沿って前記加工対象物を押圧することを特徴とする請求項記載の加工対象物切断方法。
【請求項11】 前記加工対象物の裏面側に第2のシートを貼り付ける第2の貼付工程を前記押圧工程前に備え、
前記第2のシートを拡張させる拡張工程を前記押圧工程後に備えることを特徴とする請求項1〜10のいずれか一項記載の加工対象物切断方法。
【請求項12】 基板と前記基板の表面に設けられた積層部とを有する加工対象物の前記基板の内部に集光点を合わせてレーザ光を照射し、前記基板の内部に改質領域を形成し、この改質領域によって、前記加工対象物の切断予定ラインに沿って前記加工対象物のレーザ光入射面から所定距離内側に切断起点領域を形成する切断起点領域形成工程と、
前記切断起点領域形成工程後に、前記加工対象物の前記表面側及び前記加工対象物の裏面側のそれぞれにシートを貼り付けた状態で、前記切断予定ラインに沿って前記加工対象物を分断する分断工程と、
前記分断工程後に、前記表面側に貼り付けられたシートを剥がす剥離工程とを備えることを特徴とする加工対象物切断方法。
[Claims]
An object to be processed having a substrate and a laminated portion provided on the surface of the substrate is irradiated with laser light by arranging a focusing point on the inside of the substrate, and the inside of the substrate is subjected to multiphoton absorption. Forming a modified region, by this modified region, a cutting origin region forming step of forming a cutting origin region a predetermined distance inward from the laser light incidence surface of the processing object along the line to cut the processing object; ,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
2. A method according to claim 1 , further comprising : setting a light-condensing point on the inside of said substrate of a processing object having a substrate and a laminated portion provided on a surface of said substrate, so that a peak power density at said light-condensing point is 1 × 10 8 (W / Cm 2 ) or more and a pulse width of 1 μs or less, irradiating a laser beam to form a modified region including a crack region inside the substrate, and by using the modified region, the cutting of the object to be processed is performed. A cutting starting point area forming step of forming a cutting starting point area a predetermined distance inward from the laser light incident surface of the processing object along the line,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
3. A converging point is set inside the substrate of a processing object having a substrate and a laminated portion provided on the surface of the substrate, and a peak power density at the converging point is 1 × 10 8 (W / Cm 2 ) or more and a pulse width of 1 μs or less to form a modified region including a melt-processed region inside the substrate, and to cut the workpiece by the modified region. A cutting starting area forming step of forming a cutting starting area inside a predetermined distance from the laser light incident surface of the processing object along the scheduled line,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
4. inside the substrate of the workpiece and a layered portion provided on the substrate and the surface of the substrate with its focusing point, the peak power density at the focal point 1 × 10 8 (W / Cm 2 ) or more and a pulse width of 1 ns or less to form a modified region including a refractive index change region, which is a region where the refractive index has changed, inside the substrate. By the region, a cutting starting region forming step of forming a cutting starting region inside a predetermined distance from the laser light incident surface of the processing object along the line to cut the processing object,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
5. A method according to claim 1 , further comprising: setting a light-condensing point on the inside of the substrate of the object to be processed having a substrate made of a semiconductor material and a laminated portion provided on the surface of the substrate; A modified region is formed inside the substrate by irradiating a laser beam under a condition of 10 8 (W / cm 2 ) or more and a pulse width of 1 μs or less, and the modified object is cut by the modified region. A cutting starting point area forming step of forming a cutting starting point area a predetermined distance inward from the laser light incident surface of the processing object along the line,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
6. A method according to claim 6 , wherein a light-condensing point is set at a light-condensing point at a light-condensing point on a substrate to be processed having a substrate made of a piezoelectric material and a laminated portion provided on the surface of said substrate. A modified region is formed inside the substrate by irradiating a laser beam under a condition of 10 8 (W / cm 2 ) or more and a pulse width of 1 μs or less, and the modified object is cut by the modified region. A cutting starting point area forming step of forming a cutting starting point area a predetermined distance inward from the laser light incident surface of the processing object along the line,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
7. A laser beam is radiated to a processing object having a substrate made of a semiconductor material and a laminated portion provided on the surface of the substrate so as to focus the laser beam on the inside of the substrate. Forming a fusion-processed area, the fusion-processed area, a cutting-start-point area forming step of forming a cutting-origin area within a predetermined distance from a laser light incident surface of the processing object along a line to cut the processing object; ,
A first attaching step of attaching a first sheet to the front side of the processing object,
And a pressing step of pressing the processing object via the first sheet.
8. The method according to claim 1, wherein, in the step of forming a cutting starting region, the modified region is formed by being deviated from a center position in a thickness direction of the substrate toward a back surface of the substrate . The method for cutting a workpiece according to any one of the preceding claims.
The method according to claim 9, wherein said pressing step, the workpiece cutting method according to any one of claims 1-8, characterized in that for pressing the workpiece along the cutting line.
The method according to claim 10, wherein the cutting start region forming step, and stores the position data of the line to cut relative to the workpiece,
The method according to claim 9 , wherein in the pressing step, the object is pressed along the line to be cut based on the position data.
11. comprising a second sticking step of sticking the second sheet on the back surface side of the workpiece prior to the pressing step,
The method for cutting a workpiece according to any one of claims 1 to 10 , further comprising an expanding step of expanding the second sheet after the pressing step.
12. The combined inside the focal point of the substrate of the workpiece having a substrate and laminate part disposed on a surface of the substrate is irradiated with laser light, the modified region inside the substrate Forming, by this modified region, a cutting starting region forming step of forming a cutting starting region inside a predetermined distance from the laser light incident surface of the processing object along a line to cut the processing object,
After the cutting starting area forming step, in a state where a sheet is attached to each of the front surface side of the processing object and the back surface side of the processing object, dividing the processing object along the planned cutting line Process and
And a peeling step of peeling off the sheet attached to the front side after the dividing step.

JP2003060324A 2002-03-12 2003-03-06 Processing object cutting method Expired - Lifetime JP4409840B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003060324A JP4409840B2 (en) 2002-03-12 2003-03-06 Processing object cutting method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002-67372 2002-03-12
JP2003060324A JP4409840B2 (en) 2002-03-12 2003-03-06 Processing object cutting method

Publications (3)

Publication Number Publication Date
JP2003334675A JP2003334675A (en) 2003-11-25
JP2003334675A5 true JP2003334675A5 (en) 2006-04-20
JP4409840B2 JP4409840B2 (en) 2010-02-03

Family

ID=29714042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003060324A Expired - Lifetime JP4409840B2 (en) 2002-03-12 2003-03-06 Processing object cutting method

Country Status (1)

Country Link
JP (1) JP4409840B2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268752A (en) 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP4515790B2 (en) 2004-03-08 2010-08-04 株式会社東芝 Semiconductor device manufacturing method and manufacturing apparatus thereof
JP4631044B2 (en) * 2004-05-26 2011-02-16 国立大学法人北海道大学 Laser processing method and apparatus
KR101109860B1 (en) 2004-08-06 2012-02-21 하마마츠 포토닉스 가부시키가이샤 Laser processing method, cutting method for work and semiconductor device
JP2007141998A (en) * 2005-11-16 2007-06-07 Denso Corp Apparatus and method of manufacturing semiconductor chip
JP2010239005A (en) * 2009-03-31 2010-10-21 Kinki Univ Manufacturing method of backside illuminating type imaging device, backside illuminating type imaging device manufactured by the manufacturing method, and imaging apparatus including the same
KR101751046B1 (en) 2011-02-01 2017-06-26 삼성전자 주식회사 Wafer dicing press and its semiconductor wafer dicing system
JP5992256B2 (en) * 2012-08-24 2016-09-14 株式会社ディスコ Wafer dividing method
JP6428113B2 (en) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 Breaking method and apparatus for patterning substrate
JP6428112B2 (en) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 Patterning substrate breaker
JP6417828B2 (en) * 2014-09-30 2018-11-07 三星ダイヤモンド工業株式会社 Breaking method and apparatus for patterning substrate
JP2018085368A (en) * 2016-11-21 2018-05-31 日本特殊陶業株式会社 Lid member, light emitting device using the same, and manufacturing method of the same
KR101960267B1 (en) * 2017-05-12 2019-03-21 (주)제이스텍 method for film desquamation for bending of flexible display
US12202759B2 (en) 2018-02-26 2025-01-21 Corning Incorporated Methods for laser forming transparent articles from a transparent mother sheet and processing the transparent articles in-situ
JP7080555B2 (en) * 2018-03-16 2022-06-06 株式会社ディスコ Wafer processing method
JP7118804B2 (en) 2018-08-17 2022-08-16 キオクシア株式会社 Semiconductor device manufacturing method
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
KR102733241B1 (en) 2019-05-07 2024-11-22 삼성디스플레이 주식회사 Adhesion member, Display module, and method for fabricating display device
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7656850B2 (en) * 2020-02-20 2025-04-04 協立化学産業株式会社 Method for cutting workpiece and resin application device

Similar Documents

Publication Publication Date Title
JP2003334675A5 (en)
JP4907984B2 (en) Laser processing method and semiconductor chip
JP2006068816A5 (en)
KR101252884B1 (en) Laser processing method
JP6678586B2 (en) Processing of 3D molded transparent brittle substrate
US10421683B2 (en) Method and device for the laser-based machining of sheet-like substrates
JP3929393B2 (en) Cutting device
WO2003076119A1 (en) Method of cutting processed object
US20060040472A1 (en) Method for separating semiconductor substrate
JP4409840B2 (en) Processing object cutting method
KR20190003766A (en) Sapphire cutting method and apparatus
JP6871095B2 (en) Manufacturing method of glass interposer
WO2006051866A1 (en) Laser beam machining method and semiconductor chip
JP2003338467A (en) Method for cutting semiconductor substrate
WO2004080643A1 (en) Laser beam machining method
CN107755904A (en) By the device and method of laser cutting profile from flat substrate
WO2007004607A1 (en) Method for cutting workpiece
WO2004082006A1 (en) Laser beam machining method
TW201143947A (en) Laser machining and scribing systems and methods
JP2004001076A5 (en)
JP2003334812A5 (en)
TW201101388A (en) Method and apparatus for processing substrates
WO2006051861A1 (en) Laser processing method
WO2003077295A1 (en) Method for dicing substrate
JP5322418B2 (en) Laser processing method and laser processing apparatus