JP2003316294A - Electro-optical devices and electronic equipment - Google Patents

Abstract

(57) Abstract: A high-quality image can be displayed in an electro-optical device by not causing a wiring delay of a fixed potential side capacitor electrode forming a storage capacitor to be a problem. SOLUTION: A pixel electrode (9) is provided on a TFT array substrate.
a), a TFT connected thereto, a scanning line and a data line (6a) connected to the TFT, and a relay layer (71) as a pixel potential side capacitance electrode connected to the pixel electrode; Storage capacitor (70) having a laminated structure of a film and a transparent electrode (300) as a fixed potential side capacitance electrode
It has. Of these, it is effective to form the transparent electrode in a solid pattern over the entire surface of the substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of electro-optical devices such as liquid crystal devices and electronic equipment, and in particular, image display is possible by supplying image signals to pixel electrodes through data lines. Along with the technical field of an electro-optical device including a storage capacitor, which is a kind of a capacitor, for improving the potential holding characteristic of the pixel electrode according to the image signal, and an electronic device including such an electro-optical device. Belong to

[0002]

2. Description of the Related Art Conventionally, pixel electrodes arranged in a matrix and thin film transistors (Thin
Film Transistor; hereinafter referred to as "TFT" as appropriate. ),
A scanning line and a data line, which are connected to each of the TFTs and are provided in parallel in the row and column directions, are provided, and the scanning line driving circuit drives the scanning line with respect to the data line. There is known an electro-optical device capable of so-called active matrix driving by being driven by a data line driving circuit.

In such an electro-optical device, a storage capacitor connected to the TFT and the pixel electrode may be further provided on the TFT array substrate having the above-mentioned TFT and the pixel electrode. This storage capacitor makes it possible to hold the potential applied to the pixel electrode for a certain period,
It is possible to remarkably improve the potential holding characteristic.

More specifically, the storage capacitor comprises a pair of electrodes sandwiching a dielectric film, one electrode of which is connected to the pixel electrode and has the same potential as that of the pixel potential side. The capacitance electrode and the other electrode are generally fixed potential side capacitance electrodes having a fixed potential. Further, conventionally, there is also a configuration in which a capacitance line is formed along a direction in which a scanning line extends and a part of this capacitance line is used as a fixed potential side capacitance electrode.

[0005]

However, in the electro-optical device as described above, a wiring delay occurs in the fixed potential side capacitance electrode forming the above-mentioned storage capacitance, which causes crosstalk on the image. As a result, there is a problem that image quality is deteriorated. This is because the fixed-potential-side capacitance electrode and other various components forming the electro-optical device are being narrowed down for the purpose of making the electro-optical device smaller or higher definition. That is, as the capacitance electrode on the fixed potential side is further narrowed, its electric resistance value is increased and wiring delay is caused.

In order to deal with such a problem, for example,
An attempt to increase the thickness of the fixed potential side capacitance electrode can be considered. According to this, the cross-sectional area of the fixed potential side capacitance electrode is increased, and the electric resistance value thereof can be reduced. However, if the fixed-potential-side capacitance electrode is made thicker, the following various problems newly arise.

First, there is a problem of internal stress of the fixed potential side capacitance electrode. That is, when the fixed-potential-side capacitance electrode is made thicker, the stress acting on the inside becomes larger, and sometimes the self-destruction or the stress diverges / acts to the outside, resulting in the fixed-potential-side capacitance. There is a possibility of causing problems such as cracks in various structures (for example, an interlayer insulating film) formed around the electrodes. Secondly, the difficulty of etching and other processing for the fixed potential side capacitive electrode having a thick film is increased. For example, in the case where the storage capacitor has a laminated structure of a pixel potential side capacitance electrode, a dielectric film and a fixed potential side capacitance electrode in order from the bottom, a contact hole must be opened for the fixed potential side capacitance electrode. In the case where it does not occur, it is generally difficult to properly perform etching on the fixed-potential-side capacitance electrode that has been made thicker, while considering the influence of the processing on the dielectric film located thereunder. In the worst case, a short circuit may occur between the pixel potential side capacitance electrode and the fixed potential side capacitance electrode. Thirdly, if the fixed potential side capacitance electrode is thickened, there is a problem that a step is generated in the structure of the upper layer.

Further, in the past, in order to prevent light from entering the TFT, the fixed potential side capacitance electrode may be required to have a light shielding performance. This is because when light enters the TFT, especially its channel region, a light leak current is generated, which may cause flicker or the like on the image. In order to solve such a problem, for example, it is effective that the fixed potential side capacitance electrode is made of a light shielding material, that is, a refractory metal such as WSi (tungsten silicide). If the above is used, the above-mentioned problems of stress and processing difficulty become more serious. In other words, for the fixed potential side capacitance electrode, that resistance should be lowered, and
It should be considered that the fact that it should have light-shielding performance is generally a conflicting requirement.

The present invention has been made in view of the above problems, and it is possible to display a high-quality image by not making the wiring delay of the fixed potential side capacitance electrode constituting the storage capacitance a problem. An object is to provide an electro-optical device and an electronic device. Another object of the present invention is to provide an electro-optical device and electronic equipment capable of displaying a high-quality image without flicker by preventing light from entering the TFT.

[0010]

In order to solve the above-mentioned problems, an electro-optical device of the present invention is provided with a thin film transistor provided corresponding to a scanning line and a data line on a substrate and a thin film transistor provided corresponding to the thin film transistor. And a storage capacitor formed by sequentially stacking a pixel potential side capacitance electrode connected to the pixel electrode, a dielectric film, and a fixed potential side capacitance electrode, the fixed potential side capacitance electrode being transparent. It is made of a conductive material.

According to the electro-optical device of the present invention, first, the operation of the thin film transistor can be controlled through the scanning line, and at the same time, the image signal can be written in the pixel electrode through the thin film transistor through the data line. As a result, so-called active matrix driving can be performed. Further, since the electro-optical device according to the present invention is provided with the storage capacitor, the potential holding characteristic of the pixel electrode is significantly improved.

In addition to the above structure, an opposing substrate having a common electrode, an electro-optical substance such as liquid crystal sandwiched between the opposing substrate and the substrate (hereinafter represented by "liquid crystal"), and the like are provided. By applying a predetermined potential difference between the pixel electrode and the common electrode (that is, the liquid crystal for each pixel), it is possible to change the alignment state of the liquid crystal and change the light transmittance thereof. . Therefore, if the reflected light from the substrate or the transmitted light transmitted through the substrate is made to enter such a liquid crystal, the gradation of the emitted light that has exited the liquid crystal according to the change in the transmittance can be adjusted. Since it can be changed, it is possible to display an image. In this case, the region where the light is transmitted through the liquid crystal is almost the same as the region where the pixel electrode is formed and the regions above and below the region (hereinafter referred to as the “opening region”). Other than that,
The area provided with the scanning lines and the data lines is a non-open area.

Particularly in the present invention, the fixed potential side capacitance electrode among the fixed potential side capacitance electrode, the dielectric film and the pixel potential side capacitance electrode forming the storage capacitance is made of a transparent conductive material. Therefore, according to the present invention, the form of the fixed potential side capacitance electrode can be selected extremely freely as compared with the conventional case. Because it is “transparent”, even if the fixed-potential-side capacitance electrode is formed so as to cover all or part of the opening region, it may significantly impede the passage of light. This is because there is no serious adverse effect on the image display. That is, in this case, the resistance can be reduced by forming the fixed-potential-side capacitance electrode in such a manner that the area is enlarged in a plane. In this case, since it is not necessary to thicken the fixed potential side capacitance electrode, various problems such as those described in the background art section are not caused.

As described above, according to the present invention, it is possible to effectively solve the problem of wiring delay in the fixed potential side capacitance electrode, and it is possible to display a high quality image.

The specific form of the fixed potential side capacitance electrode according to the present invention is, for example, formed in a solid shape or along a data line, as described in various aspects of the present invention described later. However, the present invention is not particularly limited to such a form. The point is that the "area" of the fixed potential side capacitance electrode is secured so that the resistance can be lowered so that the wiring delay does not become a problem, or the "form" that can reduce the resistance is adopted. Of. In this case, the size of the “area” or the specific form of the fixed potential side capacitance electrode is determined experimentally, empirically, theoretically,
Alternatively, it can be appropriately determined by simulation.

The "transparent conductive material" referred to in the present invention is, for example, ITO (Indium Tin Oxide) or IZO (In
dium Zinc Oxide) etc.

Furthermore, the order of the three elements constituting the "storage capacitor" of the present invention, that is, the laminated structure consisting of the pixel potential side capacitance electrode, the dielectric film and the fixed potential side capacitance electrode is kept in a relative relationship. It has to be done. For example, a laminated structure of a pixel potential side capacitance electrode, a dielectric film, and a fixed potential side capacitance electrode may be arranged in order from the bottom, or conversely, the lamination structure may be realized in order from the top.

In addition, as the "electro-optical substance" in the present invention, a liquid crystal is typically applicable as described above, but in addition, powder EL (dispersed in a suitable binder) Electroluminescence), or inorganic or organic EL, etc. may also apply. In this case, it is possible to apply an electric field to the EL by appropriately energizing the scanning line and the data line, and the EL itself emits light, which causes a mechanism of displaying an image. It becomes like this "EL
Since it can be considered that the "display device" also includes the above-mentioned TFTs, scanning lines and data lines, storage capacitors, etc., the application of the present invention is naturally possible even in such a case.

In one aspect of the electro-optical device of the present invention, the fixed potential side capacitance electrode is formed so as to cover at least a part of an opening region corresponding to the formation region of the pixel electrode.

According to this aspect, as described above, since the fixed potential side capacitance electrode can be formed in a shape having a relatively large area reaching the opening region, the resistance thereof can be reduced, and thus the wiring can be formed. It is possible to effectively solve the problem of delay. Also, the fixed potential side capacitance electrode is “transparent”
Therefore, even if it is formed so as to reach the opening area, it is possible to maintain the image quality at a high level without significantly impairing the brightness on the image.

In one aspect of the electro-optical device of the present invention, the fixed potential side capacitive electrode is formed in a solid shape on the substrate.

According to this aspect, since the fixed potential side capacitance electrode is formed in a solid shape, the problem of wiring delay hardly occurs. That is, according to this aspect, it is possible to more reliably enjoy the above-described effects. In this case, generally, when the fixed potential side capacitance electrode and the opening region are viewed in a plan view, there is always an overlapping region, but even in such a case, the fixed potential side capacitance electrode is also present. As described above, the fact that "is transparent" does not deteriorate the quality of the image.

In another aspect of the electro-optical device of the present invention, the fixed potential side capacitance electrode is arranged between the data line and the pixel potential side capacitance electrode via an interlayer insulating film.

According to this aspect, since the fixed potential side capacitance electrode can act as an electric shield, it is possible to suppress the occurrence of capacitance coupling between the data line and the pixel side capacitance electrode. This makes it possible to avoid a situation in which the potential of the pixel electrode connected to the pixel potential side capacitance electrode fluctuates due to the capacitance coupling, and thus, for example, a display along a data line is performed. It is possible to almost eliminate the possibility of causing unevenness on the image. Therefore, according to this configuration,
A higher quality image can be displayed.

In this structure, a laminated structure of the pixel potential side capacitance electrode, the fixed potential side capacitance electrode and the data line is planned in order from the top or the bottom, but as described above, the storage capacitance is constituted. The laminated structure of the three elements may be of any specific type as long as the relative relationship between them is maintained. Therefore, in some cases, the data line and the fixed line are sequentially arranged from the bottom on the substrate. A laminated structure of a potential side capacitance electrode and a pixel side capacitance electrode may be formed.

Further, in a mode in which the fixed potential side capacitance electrode is formed in a solid shape (including various modes thereof), at least one of the pixel electrode, the thin film transistor, the data line and the thin film transistor is electrically connected. It is preferable that a contact hole is further provided, and a hole corresponding to a position where the contact hole is formed is formed in the fixed potential side capacitance electrode.

According to this structure, the contact hole can be formed without difficulty, so that the electrical connection between the above-described various structures forming the electro-optical device according to the present invention can be realized without difficulty. be able to.

The "hole" referred to in this embodiment is sufficient if the fixed potential side capacitance electrode provided with the hole is formed to have an area required to eliminate the wiring delay. In view of the above, it is not necessary to form it with high accuracy. That is, the hole may be a hole having a size sufficient for penetrating the contact hole and not a hole having a size that significantly reduces the area of the fixed potential side capacitive electrode. Is not necessary.

In another aspect of the electro-optical device of the present invention, a plurality of the scanning lines and the data lines are arranged so as to sew between the pixel electrodes arranged in a matrix, and the fixed potential is provided. The side capacitance electrode is arranged between the pixel potential side capacitance electrode and the data line, and is formed along at least one data line of the plurality of data lines.

According to this aspect, since the fixed potential side capacitance electrode is arranged between the pixel potential side capacitance electrode and the data line and is formed along at least one data line, the data Since the fixed potential side capacitive electrode can act as an electric shield between the line and the pixel potential side capacitive electrode, it is possible to prevent capacitive coupling between the two in advance. Become.
Therefore, it is possible to display a high-quality image because there is no possibility of causing potential fluctuations in the pixel electrode connected to the pixel potential side capacitance electrode. Such an effect can be similarly enjoyed even in the above-described form in which the fixed potential side capacitance electrode is formed in a solid state.

The term "formed along the data line" in this embodiment naturally includes the case where the fixed potential side capacitance electrode is formed immediately above or below the data line, and also includes the width of the data line. It also includes a case where a fixed potential side capacitance electrode that exceeds the limit is formed. In such a case, the edge portion of the fixed potential side capacitive electrode reaches the opening region, but as described above, the fixed potential side capacitive electrode of the present invention is made of the transparent conductive material, and It is still possible to display a bright image without causing the problem of reduction in aperture ratio. Therefore, according to this aspect, it is of course possible to reduce the resistance by increasing the area of the fixed potential side capacitance electrode.

In this aspect, it is particularly preferable that the fixed potential side capacitance electrode is formed in a lattice shape when seen in a plan view.

According to such a structure, for example, when the scanning lines and the data lines are formed in a grid pattern, the scanning lines and the data lines are arranged along the non-aperture area where the scanning lines and the data lines are formed. , The fixed potential side capacitance electrode is formed. According to this, the resistance of the capacitor electrode on the fixed potential side can be further reduced as compared with the case of being formed "along the data line", which is one mode of the case of being formed "at least along the data line". In addition, since it is possible to form the capacitance electrode on the fixed potential side only in the substantially non-opening region, the influence on the image can be suppressed as much as possible.

In addition, in the aspect in which the fixed potential side capacitance electrode is formed "at least along the data line" and the aspect in which it is formed in the "lattice shape", the data formed along the fixed charge side capacitance electrode The lines may include data lines located at both ends of the set of data lines to which the image signal is to be supplied at one time.

According to such a configuration, for example, when the image signal subjected to the serial-parallel conversion is supplied to the plurality of data lines of each group, the problem of capacitive coupling as described above occurs. It is possible to prevent it. Hereinafter, the circumstances will be described in detail.

Generally, various methods have been proposed as a method of supplying an image signal to a data line. Among them, a plurality of adjacent data lines are divided into groups, and an image is simultaneously displayed for each group. There is a method of supplying a signal. However, in this case, a group that is currently receiving the supply of the image signal (hereinafter referred to as “supply group”),
Between the group adjacent to it (hereinafter, referred to as "non-supply group"), there was a problem that display unevenness appeared on the image in a form substantially along the data line extending corresponding to the position. Of.

This is because in the pixel electrodes that exist just at the end of the supply group and the non-supply group,
This is because the electric field corresponding to the image signal is not applied as a result. More specifically, in this case, one end of the pixel electrode has a data line to which an image signal is supplied, and the other end has a data line to which an image signal is not supplied. For the pixel electrode
Even if an accurate electric field corresponding to an image signal is applied, the potential thereof varies due to the influence of capacitive coupling between the pixel electrode and the data line to which the image signal is not supplied. Incidentally, such inconvenience does not occur with respect to the potentials of the pixel electrodes in the supply group which are not located at the end boundaries.

Here, particularly in this embodiment, the "set of data lines to which the image signal is to be supplied at one time", that is, the data lines located at both ends of the supply group, are arranged along the data lines. Thus, the fixed potential side capacitance electrode described above is formed. Here, the "data lines located at both ends" are the data lines that may cause capacitive coupling with the pixel electrodes that exist just at the boundary between the supply group and the non-supply group described above. .

Therefore, according to this aspect, it is possible to almost eliminate the possibility of capacitive coupling between the data line and the pixel-potential-side capacitance electrode, so that the data line can be shaped substantially along the line. It is possible to eliminate the occurrence of display unevenness.

In another aspect of the electro-optical device of the present invention, the pixel potential side capacitance electrode is made of a light shielding material.

According to this aspect, it is possible to effectively eliminate the inconvenience caused by the fixed potential side capacitive electrode made of a transparent conductive material. That is, in the past, by configuring the fixed potential side capacitive electrode of a light-shielding material, it is possible to prevent light from entering the thin film transistor.
In the present invention, when the light leakage current is prevented from occurring, the fixed potential side capacitance electrode is made of a transparent conductive material, so that the light shielding performance can no longer be expected, but the fixed potential side capacitance electrode is no longer expected. If the pixel potential side capacitance electrode arranged opposite to the capacitance electrode is made of a light shielding material,
In substantially the same manner as before, it becomes possible to prevent light from entering the thin film transistor.

Therefore, according to this aspect, it is possible to display a high-quality image without flicker and the like, with almost no light leakage current being generated in the channel region of the thin film transistor.

Examples of such a light-shielding material include, for example, Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum).
There are simple metals, alloys, metal silicides, polysilicides, etc. containing at least one of refractory metals such as

Particularly in this aspect, it is preferable that the pixel potential side capacitance electrode has a multilayer structure.

According to this structure, for example, the pixel potential side capacitance electrode can have a two-layer structure including a layer made of a conductive polysilicon layer and a layer made of a light shielding material. . In this case, the light-shielding material is directly connected to the semiconductor layer by using the layer made of polysilicon for direct connection between the pixel potential side capacitance electrode and the semiconductor layer of the thin film transistor. As a result, it is possible to suppress as much as possible the inconvenience caused, that is, the problem that so-called electrolytic corrosion occurs between the two and eventually electrical conduction becomes impossible.

Incidentally, the above-mentioned "electrolytic corrosion" means a phenomenon in which an element such as P (phosphorus) contained in conductive polysilicon is sucked up by WSi or the like which is a light shielding material. In this case, the interface between the two materials becomes insulative due to the formation of single crystal silicon, etc., and finally the electrical conductivity between the two materials cannot be maintained. In this aspect, it is possible to prevent such a situation from occurring.

Needless to say, various forms other than the above can be considered as the "multilayer structure" in this embodiment. For example, basically, as described above, while having a two-layer structure of a layer made of conductive polysilicon and a layer made of a light-shielding material, the layer made of a light-shielding material is further , The upper layer is a material with high light reflectivity,
The lower layer may have a structure such as being composed of a material having a high light absorption property (that is, in this case, it has a substantially three-layer structure).

In another aspect of the electro-optical device of the present invention, the fixed potential side capacitance electrode has a thickness of 50 to 500 nm.

According to this aspect, for example, even if the fixed potential side capacitance electrode is formed so as to reach the opening region, the thickness of the fixed potential side capacitance electrode is equal to that of the light passing through the opening region. However, it is limited to a range suitable for maintaining the transparency of the entire electro-optical device. Therefore, according to this aspect, it is possible to avoid deterioration of image quality due to deterioration of transparency as much as possible. In addition, such a limitation of the thickness is that the fixed potential side capacitance electrode is
It is particularly effective when formed into a solid shape.

In another aspect of the electro-optical device of the present invention, the surface of the interlayer insulating film located under the fixed potential side capacitance electrode is subjected to a flattening treatment.

According to this aspect, it is possible to form the fixed potential side capacitance electrode flat, and to cause a crack in a part of the fixed potential side capacitance electrode due to deterioration of the coverage due to a step or the like. There is nothing. This allows a more effective elimination of the effects of capacitive coupling.

The "flattening process" means, for example, CM
P (Chemical Mechanical Polishing) processing, etch back processing, or the like may be applicable.

In another aspect of the electro-optical device of the present invention, the pixel potential side capacitance electrode is made of a transparent conductive material instead of or in addition to the fixed potential side capacitance electrode.

According to this aspect, with respect to the pixel potential side capacitance electrode, it is possible to receive substantially the same operational effects as those described above in the case where the fixed potential side capacitance electrode is made of the transparent conductive material. That is, by increasing the area of the capacitor electrode on the pixel potential side, it is possible to effectively solve the wiring delay problem. Even if the area is increased, the image quality can be maintained at a high level without significantly impairing the brightness of the image.

The electronic equipment of the present invention comprises the above-mentioned electro-optical device of the present invention (however, including its various aspects).

According to the electronic apparatus of the present invention, since it is equipped with the above-described electro-optical device of the present invention, the wiring delay of the fixed potential side capacitive electrode does not pose a problem, and a high quality image is displayed. Various types of electronic devices such as projection-type display devices (liquid crystal projectors), liquid crystal televisions, mobile phones, electronic organizers, word processors, viewfinder-type or monitor direct-view type video tape recorders, workstations, videophones, POS terminals, touch panels, etc. Equipment can be realized.

The operation and other advantages of the present invention will be apparent from the embodiments described below.

[0058]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The following embodiments apply the electro-optical device of the present invention to a liquid crystal device.

(First Embodiment) First, the structure of the pixel portion of the electro-optical device according to the first embodiment of the present invention will be described with reference to FIGS. Figure 1
Is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that form an image display area of the electro-optical device. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed, and FIG. 3 is a sectional view taken along line AA ′ of FIG. is there. In FIG. 3, the scales of the layers and members are different from each other in order to make the layers and members recognizable in the drawing.

In FIG. 1, a pixel electrode 9a and a pixel electrode 9a for switching control of a plurality of pixels formed in a matrix form the image display area of the electro-optical device according to the first embodiment. TFT30
And the data line 6 to which the image signal is supplied.
a is electrically connected to the source of the TFT 30. Image signals S1, S2, ...
Sn may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a in groups.

The scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2, ..., Gm are applied to the scanning line 3a in a pulse-wise manner in this order at a predetermined timing. Is configured to. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30, which is a switching element, for a certain period, the image signals S1, S2, ..., Sn supplied from the data line 6a are transmitted. Write at a predetermined timing.

An image signal S of a predetermined level written in liquid crystal as an example of an electro-optical material via the pixel electrode 9a.
, S2, ..., Sn are held for a certain period between the counter electrode and the counter electrode formed on the counter substrate. The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in each pixel unit, and in the normally black mode, the incident light is incident according to the voltage applied in each pixel unit. The transmittance for light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided side by side with the scanning line 3a and is fixed to the constant potential as a transparent electrode 300 as a fixed potential side capacitive electrode.
Is included. The first embodiment is characterized in that the transparent electrode 300 is formed in a solid shape as described later (since FIG. 1 is a circuit diagram, the transparent electrode 300 is schematically shown as a line. It is drawn in a shape.)

In the following, the data line 6a and the scanning line 3 will be described.
A more realistic configuration of the electro-optical device that realizes the above-described circuit operation by the a, the TFT 30, and the like will be described with reference to FIGS. 2 and 3.

First, in the electro-optical device according to the first embodiment, as shown in FIG. 3, which is a sectional view taken along the line AA ′ of FIG. 2, a transparent TFT array substrate 10 and a transparent TFT array substrate arranged to face the transparent TFT array substrate 10 are arranged. The counter substrate 20 is provided. TFT array substrate 1
0 is, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is, for example, a glass substrate or a quartz substrate.

As shown in FIG. 3, the TFT array substrate 10
Is provided with a pixel electrode 9a, and on the upper side thereof,
Alignment film 16 subjected to a predetermined alignment treatment such as rubbing treatment
Is provided. The pixel electrode 9a is made of a transparent conductive film such as an ITO film. On the other hand, the counter substrate 20 is provided with a counter electrode 21 over the entire surface thereof, and on the lower side thereof, an alignment film 22 subjected to a predetermined alignment treatment such as a rubbing treatment is provided. Of these, the counter electrode 21 is also made of, for example, a transparent conductive film such as an ITO film, similarly to the above-mentioned pixel electrode 9a. The alignment films 16 and 2 are
2 is made of, for example, a transparent organic film such as a polyimide film.

On the other hand, in FIG. 2, the pixel electrode 9a is
Are provided in a matrix on the TFT array substrate 10 (indicated by the broken line in the figure, the edge portion 9 of the pixel electrode 9a is
(a 'is shown), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a. The data line 6a is made of a metal film such as an aluminum film or an alloy film. Further, the scanning line 3a is the semiconductor layer 1a.
Channel region 1 shown by the shaded area in the figure
The scanning line 3a is arranged so as to face a ', and functions as a gate electrode. That is, pixel switching TFTs 30 are provided at the intersections of the scanning lines 3a and the data lines 6a, in which the main line portions of the scanning lines 3a are opposed to each other as gate electrodes in the channel region 1a '.

As shown in FIG. 3, the TFT 30 has an LDD.
It has a (Lightly Doped Drain) structure, and its constituent elements are the scanning lines 3a functioning as the gate electrodes as described above, for example, the scanning lines 3a made of a polysilicon film.
a semiconductor layer 1a in which a channel is formed by an electric field from a
Channel region 1a ', an insulating film 2 including a gate insulating film that insulates the scanning line 3a from the semiconductor layer 1a, a low concentration source region 1b and a low concentration drain region 1 in the semiconductor layer 1a.
c and a high concentration source region 1d and a high concentration drain region 1e.

Although the TFT 30 preferably has an LDD structure as shown in FIG. 3, it has a low concentration source region 1b.
Further, the low concentration drain region 1c may have an offset structure in which no impurity is implanted, or the impurity is implanted at a high concentration by using the gate electrode which is a part of the scanning line 3a as a mask, and the high concentration source region and the high concentration are self-aligned. A self-aligned TFT that forms the drain region may be used. Further, in the first embodiment, the gate electrode of the pixel switching TFT 30 has a single gate structure in which only one gate electrode is arranged between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. A gate electrode may be arranged. As described above, if the TFT is configured with dual gates or triple gates or more, it is possible to prevent the leak current at the junction between the channel and the source and drain regions, and reduce the off-time current. Further, the semiconductor layer 1a forming the TFT 30 may be a non-single crystal layer or a single crystal layer. A known method such as a bonding method can be used for forming the single crystal layer. By forming the semiconductor layer 1a as a single crystal layer, it is possible to particularly improve the performance of peripheral circuits.

On the other hand, in FIG. 3, the storage capacitor 70 is
High-concentration drain region 1e of TFT 30 and pixel electrode 9a
Relay layer 71 as a pixel potential side capacitance electrode connected to
And the transparent electrode 300 as the fixed potential side capacitance electrode,
It is formed by being opposed to each other via the dielectric film 75. With this storage capacitor 70, the potential holding characteristic of the pixel electrode 9a can be remarkably improved.

In the first embodiment, in particular, as the fixed potential side capacitance electrode forming the storage capacitor 70, the transparent electrode 300 made of a transparent conductive material such as ITO or IZO is used as shown in FIGS. Alternatively, as shown in the perspective view of FIG. 4, regarding the entire surface of the TFT array substrate 10,
It is formed in a solid shape. FIG. 4 is a perspective view three-dimensionally showing the arrangement of the surrounding structure including the transparent electrode 300 in the first embodiment. In addition, in FIG. 4, since the main purpose is to illustrate a specific mode of the transparent electrode 300, the semiconductor layer 1 of the TFT 30 is illustrated.
a, contact holes 81 and 85, and relay layer 71
Only illustrated.

As shown in FIG. 2 to FIG. 4, the pixel electrode 9a and the relay layer 71 are formed on the transparent electrode 300 having a solid surface.
A contact hole 85 for electrically connecting the two, and
A hole 300a is formed corresponding to a position where a contact hole 81 for electrically connecting the high-concentration source region 1d of the TFT 30 and the data line 6a is formed. Thereby, electrical connection between the relay layer 71 and the pixel electrode 9a and between the TFT 30 and the data line 6a can be realized without any obstacle. The hole 300a does not need to be formed with high precision. The contact hole 81 or 85 may be formed so as to have a diameter substantially equal to that of the contact hole 81 or 85.

The thickness of the transparent electrode 300 is the first
From the request of maintaining the transparency of the electro-optical device according to the embodiment as much as possible, it is preferable to make the thickness as thin as possible, and more specifically, for example, it is preferably in the range of 50 to 500 nm. This allows the TFT
It is possible to sufficiently secure the transparency of the entire electro-optical device including the array substrate 10 and the counter substrate 20, that is, to prevent the transmission of light passing from the counter substrate 20 side to the TFT array substrate 10 side to be obstructed. .

Further, the transparent electrode 300 extends from the image display area 10a in which the pixel electrode 9a is arranged to the periphery thereof and is electrically connected to a constant potential source to have a fixed potential. Such a constant potential source may be a positive potential source or a negative power source constant potential source supplied to the data line driving circuit 101, or a constant potential source supplied to the counter electrode 21 of the counter substrate 20. Further, more specifically, in the case where the electro-optical device according to the first embodiment is alternately driven by two signals of inverted levels of + V volt and −V volt, these + V volt and −V volt are used. The transparent electrode 300 according to the first embodiment may be connected to a power supply that supplies an intermediate potential (hereinafter, referred to as “LCCOM potential”).

On the other hand, as shown in FIGS. 2 to 4, the relay layer 71, which is the pixel potential side capacitance electrode forming the storage capacitor 70, is arranged so as to face the above-mentioned transparent electrode 300 via the dielectric film 75. There is. The relay layer 71 has two layers: a layer 711 made of a light-shielding material (hereinafter referred to as “light-shielding layer”) 711 and a layer made of a conductive polysilicon film (hereinafter referred to as “polysilicon layer”) 712. It has a structure. Of these, the light shielding layer 711 includes, for example, at least one of refractory metals such as Ti (titanium), Cr (chrome), W (tungsten), Ta (tantalum), and Mo (molybdenum), and is a simple metal. , An alloy, a metal silicide, a polysilicide, or the like.

The relay layer 71 has a function as a capacitance electrode on the pixel potential side and a function of relay connection between the pixel electrode 9a and the high concentration drain region 1e of the TFT 30 via the contact holes 83 and 85. By using the relay layer 71 in this manner, even if the interlayer distance is as long as about 2000 nm, for example, it is possible to avoid the technical difficulty of connecting the two via a single contact hole, and at the same time, to connect two or more series having a relatively small diameter. The contact holes can be satisfactorily connected to each other, and the pixel aperture ratio can be increased. Also,
It also helps prevent penetration of etching when opening contact holes.

Finally, as shown in FIG. 3, the dielectric film 75, which is another component of the storage capacitor 70, is a relatively thin HTO (High Tem) having a film thickness of, for example, about 5 to 200 nm.
perature oxide film, LTO (Low Temperature Oxid)
e) A silicon oxide film such as a film or a silicon nitride film. From the viewpoint of increasing the storage capacitance 70, the thinner the dielectric film 75 is, the better as long as the reliability of the film is sufficiently obtained.

2 and 3, in addition to the above, T
A lower light shielding film 11a is provided below the FT 30. The lower light-shielding film 11a is patterned in a lattice pattern, and thereby defines the opening area of each pixel. By providing such a lower light-shielding film 11a, the TFT
It is possible to prevent light from entering the 30 from below. In addition, in the first embodiment, since the light shielding layer 711 forming the relay layer 71 is provided, it is possible to prevent light from entering the TFT 30 from both the upper side and the lower side. In addition,
As in the case of the transparent electrode 300 described above, the lower light-shielding film 11a is extended from the image display region to the periphery thereof so as to prevent the potential fluctuation from adversely affecting the TFT 30, and a constant potential source. Connect to.

Under the TFT 30, the base insulating film 12 is formed.
Is provided. The base insulating film 12 is the lower light-shielding film 11
In addition to the function of insulating the TFT 30 from a through the interlayer insulation, it is formed on the entire surface of the TFT array substrate 10 to change the characteristics of the TFT 30 for pixel switching due to surface roughness of the TFT array substrate 10 and stains remaining after cleaning. It has a function to prevent

In addition, on the scanning line 3a, a first interlayer insulating film 41 is formed in which a contact hole 81 communicating with the high concentration source region 1d and a contact hole 83 communicating with the high concentration drain region 1e are formed. There is.

A relay layer 71 and a transparent electrode 300 are formed on the first interlayer insulating film 41, and a contact hole 81 leading to the high concentration source region 1d and a contact hole 85 leading to the relay layer 71 are formed thereon. And a second interlayer insulating film 42 is formed.

In the first embodiment, the first interlayer insulating film 41 is baked at about 1000 ° C. to remove the ions implanted in the polysilicon film forming the semiconductor layer 1a and the scanning line 3a. It may be activated. On the other hand, the second interlayer insulating film 42 may be subjected to no such firing to reduce the stress generated near the interface of the transparent electrode 300.

The data line 6a is formed on the second interlayer insulating film 42.
Are formed, and the third interlayer insulating film 43 in which a contact hole 85 leading to the relay layer 71 is formed is formed thereon.
Are formed. The third interlayer insulating film 43 is formed by CMP.
Since it is flattened by (Chemical Mechanical Polishing) processing or the like, it is possible to reduce the alignment failure of the liquid crystal layer 50 due to the step due to various wirings and elements existing therebelow. However, as described above, the third interlayer insulating film 4
In place of or in addition to performing the flattening treatment on 3, the TFT
Array substrate 10, base insulating film 12, first interlayer insulating film 41
Alternatively, the flattening process may be performed by forming a groove in at least one of the second interlayer insulating film 42 and burying the wiring such as the data line 6a and the TFT 30.

In the electro-optical device of the first embodiment having such a configuration, the following operational effects are exhibited due to the presence of the transparent electrode 300.

First, since the fixed potential side capacitive electrode forming the storage capacitor 70 is the transparent electrode 300 formed in a solid pattern over the entire surface of the TFT array substrate 10, the wiring delay does not matter. Such a transparent electrode 3
It is no longer conceivable that 00 has a high electric resistance value. Therefore, according to the first embodiment, it is possible to display a high-quality image without causing crosstalk or flicker on the image.

As can be seen from FIGS. 3 and 4,
In the first embodiment, the transparent electrode 300 having a solid surface is
Since the data line 6a and the relay layer 71 are formed so as to be in a positional relationship, it is possible to reduce the possibility of causing capacitive coupling between them. As a result, the pixel electrode 9 having the same potential as the relay layer 71 is formed.
Since the potential of a can also be preferably maintained, it is possible to reduce the possibility of causing display unevenness or the like along the data line 6a, for example. Therefore, according to the first embodiment, also from this point, it is possible to display a high-quality image.

Further, in the first embodiment, since the relay layer 71 is provided with the light shielding layer 711, the TFT 3
The effect of light shielding for 0 is also exhibited. As a result, it is possible to suppress the generation of a light leak current in the channel region 1a 'of the TFT 30, so that it is possible to display a high quality image without flicker.

In addition, the relay layer 71 is the light shielding layer 7 described above.
By having a two-layer structure in which 1 is the upper layer and the polysilicon layer 711 is the lower layer, the following operational effects are obtained. That is, assuming that the relay layer 71 is composed of only one light shielding layer 711, the semiconductor layer 1 a forming the relay layer 71 and the TFT 30.
The electrical connection with the high-concentration drain region 1e must be made through the light-shielding layer 711. In this case, for example, when the light-shielding layer 711 is made of a refractory metal such as WSi, the semiconductor layer 1a is formed. There is a high possibility that so-called electrolytic corrosion will occur between the light shielding layer 711 and the light shielding layer 711, and electrical conduction between the two will not be achieved over time. However, in the first embodiment, as shown in FIGS. 3 and 4, the relay layer 71 is
In order to realize electrical connection between the high-concentration drain region 1e of the TFT 30 and the high-concentration drain region 1e of the TFT 30, direct contact is made between the high-concentration drain region 1e and the polysilicon layer 712 in the relay layer 71.
Therefore, the above problem does not occur (see the contact hole 83 in FIG. 3).

In summary, according to the first embodiment,
The contradictory requirements of lowering the resistance of the fixed-potential-side capacitance electrode, which is realized by the solid transparent electrode 300, and the light shielding of the TFT 30, which is realized by the light shielding layer 711 included in the relay layer 71, are simultaneously realized. Can be said.

In addition, in the first embodiment, since the transparent electrode 300 is formed in a solid shape on the TFT array substrate 10, the occurrence of capacitive coupling between the data line 6a and the relay layer 71 is suppressed. As a result, the potential of the pixel electrode 9a is stabilized, and the relay layer 71 serves as the polysilicon layer 71.
By including 2, the relay layer 71 should have T
The electrical relay function between the FT 30 and the pixel electrode 9a can be realized without delay.

In the first embodiment, the storage capacitors 70 are arranged on the TFT array substrate 10 in order from the bottom.
Relay layer 71 as a pixel potential side capacitance electrode, dielectric film 75
Also, although the laminated structure of the transparent electrode 300 as the fixed potential side capacitance electrode is formed, the present invention is not limited to such a form. For example, conversely, a laminated structure of the transparent electrode 300, the dielectric film 75, and the relay layer 71 may be configured in this order from the bottom. However, in this case, since the transparent electrode 300 is not located between the data line 6a and the relay layer 71, the above-described action and effect regarding the capacitive coupling cannot be obtained. However, in this case, the data line 6a is further connected to the transparent electrode 30.
Since it is not always impossible to position it further below 0, in such a case, even if the above-mentioned "reverse" laminated structure is adopted, the same function and effect as the capacitive coupling can be obtained. The Rukoto.

Although not mentioned in the first embodiment, in some cases, the surface of the first interlayer insulating film 41 is flattened by a CMP process or the like before the storage capacitor 70 is formed thereon. Processing may be carried out. By doing so, the relay layer 71, the dielectric film 75, and the transparent electrode 300 are formed.
Since it is possible to form the flat surface, the transparent electrode 3
In the first embodiment in which 00 is formed in a solid shape, it is possible to avoid generation of cracks, for example, without generating a step in the area inside thereof.

Further, in the first embodiment described above, only the electrode on the side having the function as the fixed potential side capacitive electrode in the storage capacitor 70 is described as the transparent electrode 300, but the present invention is not limited to this. However, the relay layer 71 having a function as a pixel potential side capacitive electrode is not limited to the above-described configuration, and depending on the case,
It may be made of a transparent conductive material such as ITO or IZO. According to such a configuration, it is possible to effectively solve the problem of wiring delay even for the pixel potential side capacitance electrode.

(Second Embodiment) Hereinafter, the second embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. Here, FIG. 5 is a diagram having the same meaning as FIG. 2, and is a plan view showing a transparent electrode having a different form from that of FIG. In addition,
The configuration of the electro-optical device according to the second embodiment is exactly the same as that of the above-described first embodiment unless otherwise specified in the description below, and therefore components having the same reference numerals in the drawings will be referred to. , Its description will be omitted. This also applies to each of the third and subsequent embodiments described below.

In the second embodiment, instead of the transparent electrode 300 formed in a solid shape over the entire surface of the TFT array substrate 10 in the first embodiment, as shown in FIG. 5, the scanning lines 3a and the data lines are formed. Transparent electrodes 301 formed in a grid pattern are provided so as to correspond to the formation regions of 6a.

Here, the transparent electrode 30 according to the second embodiment.
1 does not need to be formed so as to be completely confined within the morphological regions of the scanning lines 3a and the data lines 6a.
In other words, the edge portion 301a of the transparent electrode 301 and the edge portion 9a 'of the pixel electrode 9a may substantially overlap each other as shown in FIG. This is because, even in such a form, the transparent electrode 301 is “transparent”, so that it does not obstruct the light passing through the opening region and does not have a serious adverse effect on the image.

Therefore, even in such a form,
The effect of lowering the resistance of the fixed potential side capacitance electrode obtained in the first embodiment can be obtained in substantially the same manner.

Also in this embodiment, the transparent electrode 301 having a fixed potential exists between the data line 6a and the relay layer 71, which is the same as the first embodiment.
Therefore, it is possible to prevent the occurrence of capacitive coupling between them, so that it is possible to display a high quality image.

(Third Embodiment) The third embodiment of the present invention will be described below.
The embodiment will be described with reference to FIG. Here, FIG. 6 is a view having the same effect as FIG. 2, and is a plan view showing a transparent electrode having a different form from that of FIG.

In the third embodiment, as shown in FIG. 6, a plurality of transparent electrodes 301 are formed in a grid pattern so that the transparent electrodes 301 exist on all the data lines 6a in the second embodiment. For example, every several data lines 6a are selected from among the data lines 6a, and the grid-shaped transparent electrodes 302 are provided so as to correspond to the formation regions of the data lines 6a and the scanning lines 3a.

At this time, the above-mentioned "selection" can be performed based on the following criteria, for example. That is, when considering an image signal supply method for temporarily supplying an image signal which is a parallel signal to a set of a plurality of adjacent data lines 6a with respect to a plurality of data lines 6a, the image signal is supplied at a time. Among the set of data lines 6a (supply group) to be formed, the data lines 6a located at both ends thereof are considered to be.
According to this, when the image signal is supplied to the supply group, the potential of the pixel electrode 9a located at the boundary between the supply group and the non-supply group which is located on both sides of the supply group and is not supplied with the image signal. It is possible to prevent the fluctuation of This is because by forming the transparent electrode 302 having a fixed potential with respect to the data line 6a as described above, it is possible to prevent capacitive coupling from occurring between the data line 6a and the relay layer 71. , The relay layer 7
This is because the potential of the pixel electrode 9a electrically connected to 1 can be prevented from changing.

In short, according to the embodiment in which the transparent electrode 302 is formed on the data line 6a selected on the basis of the above-mentioned reference, the transparent electrode 302 having a fixed potential is provided at the place where the influence of capacitive coupling is most likely to occur. By forming it, it is possible to display a high-quality image by preventing the potential variation of the pixel electrode 9a.

(Overall Configuration of Electro-Optical Device) The overall configuration of the electro-optical device according to the first to third embodiments configured as described above will be described below with reference to FIGS. 7 and 8. 7. FIG. 7 is a plan view of the TFT array substrate together with the constituent elements formed thereon as seen from the counter substrate 20, and FIG. 8 is a sectional view taken along line HH 'of FIG.

7 and 8, in the electro-optical device according to this embodiment, the TFT array substrate 10 and the counter substrate 2 are used.
0 and 0 are arranged to face each other. A liquid crystal layer 50 is enclosed between the TFT array substrate 10 and the counter substrate 20,
The TFT array substrate 10 and the counter substrate 20 are adhered to each other by a sealing material 52 provided in a sealing region located around the image display region 10a.

The sealing material 52 is made of, for example, an ultraviolet curable resin or a thermosetting resin in order to bond the two substrates together, and is cured by ultraviolet rays, heating or the like. Also,
In the sealing material 52, if the electro-optical device according to the present embodiment is applied to a liquid crystal device in which the liquid crystal device is small and performs enlarged display, such as a projector application, the distance between both substrates (inter-substrate gap). A glass fiber or a gap material (spacer) such as glass beads is dispersed to obtain a predetermined value. Alternatively, if the electro-optical device is applied to a large-sized liquid crystal device such as a liquid crystal display or a liquid crystal television that displays at the same size, such a gap material may be included in the liquid crystal layer 50.

In the area outside the sealing material 52, the data line driving circuit 101 and the external circuit connection terminal 102 for driving the data line 6a by supplying the image signal to the data line 6a at a predetermined timing are provided with the TFT array substrate. The scanning line driving circuit 104, which is provided along one side of the scanning line 3a, drives the scanning line 3a by supplying the scanning signal to the scanning line 3a at a predetermined timing. It is provided.

Needless to say, the scanning line driving circuit 104 may be provided on only one side if the delay of the scanning signal supplied to the scanning line 3a does not matter. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area 10a.

On the remaining side of the TFT array substrate 10, the scanning line driving circuit 1 provided on both sides of the image display area 10a.
A plurality of wirings 105 are provided to connect between 04. In addition, at least one location of the corner portion of the counter substrate 20 is provided with a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20.

In FIG. 8, on the TFT array substrate 10, an alignment film is formed on the pixel electrodes 9a after the TFTs for pixel switching and wirings such as scanning lines and data lines are formed. On the other hand, on the counter substrate 20, the counter electrode 2
1, an alignment film is formed on the uppermost layer. The liquid crystal layer 50 is made of, for example, liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed, and a predetermined alignment state is established between the pair of alignment films.

On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, Data line 6
In a, a precharge circuit for supplying a precharge signal of a predetermined voltage level prior to each image signal, an inspection circuit for inspecting the quality, defects, etc. of the electro-optical device during manufacturing or shipping are formed. Good.

Further, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a driving LSI mounted on a TAB (Tape Automated Bonding) substrate is provided with the TFT array substrate 10 You may make it electrically and mechanically connect through the anisotropic conductive film provided in the peripheral part. Further, the side of the counter substrate 20 on which the projection light is incident and the TFT array substrate 10
On the side where the emitted light of is emitted, for example, TN (Tw
isted Nematic) mode, VA (Vertically Aligned)
Mode, PDLC (Polymer Dispersed Liquid Crysta
l) A polarizing film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction according to an operation mode such as a mode or a normally white mode / a normally black mode.

(Electronic Equipment) Next, with respect to an embodiment of a projection type color display device which is an example of an electronic equipment using the electro-optical device described above in detail as a light valve, the overall construction, particularly the optical construction will be described. To do. here,
FIG. 9 is a schematic sectional view of a projection type color display device.

In FIG. 9, a liquid crystal projector 1100 which is an example of the projection type color display device in this embodiment.
Prepares three liquid crystal modules including a liquid crystal device in which the driving circuit is mounted on the TFT array substrate.
It is configured as a projector used as the light valves 100R, 100G, and 100B for the. In the liquid crystal projector 1100, when the projection light is emitted from the lamp unit 1102 of a white light source such as a metal halide lamp, the three mirrors 1106 and the two dichroic mirrors 1108 cause the light components R, G and R corresponding to the three primary colors of RGB to be generated. It is divided into B and is led to the light valves 100R, 100G and 100B corresponding to the respective colors.
At this time, in particular, the B light is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. Then, the light valves 100R, 100
The light components corresponding to the three primary colors respectively modulated by G and 100B are combined again by the dichroic prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

The present invention is not limited to the above-described embodiments, but can be appropriately modified within the scope of the gist or the concept of the invention which can be read from the claims and the entire specification, and accompanying such modifications. Electro-optical devices and electronic devices are also included in the technical scope of the present invention.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing an equivalent circuit of various elements, wirings and the like provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the first embodiment of the invention.

3 is a cross-sectional view taken along the line AA ′ of FIG.

FIG. 4 is a perspective view showing an arrangement mode of transparent electrodes.

FIG. 5 is a diagram having the same effect as FIG. 2, but is a plan view relating to the second embodiment of the present invention and showing a mode different from that of FIG. 2 in that transparent electrodes are formed in a grid pattern.

FIG. 6 is a view having the same effect as FIG. 2, but relates to the third embodiment of the present invention and is different from that in FIG. 2 in that the transparent electrodes are formed in a grid shape (also different from FIG. 5). FIG.

FIG. 7 shows T in the electro-optical device according to the embodiment of the invention.
It is the top view which looked at an FT array substrate from the counter substrate side with each component formed on it.

8 is a cross-sectional view taken along line HH 'of FIG.

FIG. 9 is a schematic cross-sectional view showing a color liquid crystal projector which is an example of a projection type color display device which is an embodiment of an electronic apparatus of the invention.

[Explanation of symbols]

3a ... Scan line 6a ... Data line 9a ... Pixel electrode 10 ... TFT array substrate 11a ... Lower light-shielding film 30 ... TFT 70 ... Storage capacitor 71 ... Relay layer 711 ... Light-shielding layer 712 ... Polysilicon layer 75 ... Dielectric film 300, 301, 302 ... Transparent electrodes (corresponding to an example of "fixed potential side capacitance electrode" in the present invention) 300a ... Holes 83, 85 ... Contact holes

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H092 JA25 JA29 JA36 JA38 JA42                       JA46 JB05 JB13 JB23 JB32                       JB38 JB51 JB57 JB63 JB69                       KA04 KA05 KA12 KA18 KA22                       NA05 NA22 NA25 NA27 NA28                       NA29 RA05                 5C094 AA03 BA03 BA43 CA19 DA15                       EA04 EA05 EA07 FB19                 5F110 AA21 AA30 BB02 CC02 DD02                       DD03 DD05 DD11 EE09 EE27                       GG12 HJ23 HL03 HL04 HL05                       HL06 HL08 HM14 HM15 NN03                       NN42 NN44 NN46 NN48 NN72                       NN73 QQ11 QQ16 QQ19

Claims (14)

[Claims] 1. A thin film transistor provided on a substrate corresponding to a scanning line and a data line, and a pixel electrode provided corresponding to the thin film transistor,
A pixel potential side capacitance electrode connected to the pixel electrode, a dielectric film, and a storage capacitance formed by sequentially laminating a fixed potential side capacitance electrode, and the fixed potential side capacitance electrode is made of a transparent conductive material. An electro-optical device characterized by. 2. The electro-optical device according to claim 1, wherein the fixed potential side capacitance electrode is formed so as to cover at least a part of an opening region corresponding to a formation region of the pixel electrode. . 3. The fixed potential side capacitance electrode is formed in a solid shape on the substrate.
Or the electro-optical device according to 2. 4. The electro-optical device according to claim 1, wherein the fixed potential side capacitance electrode is arranged between the data line and the pixel potential side capacitance electrode via an interlayer insulating film. apparatus. 5. A contact hole for electrically connecting at least one of the pixel electrode, the thin film transistor, and the data line and the thin film transistor, wherein the contact hole is formed in the fixed potential side capacitance electrode. 5. The electro-optical device according to claim 3, wherein a hole corresponding to is formed. 6. A plurality of each of the scanning lines and the data lines are arranged so as to sew between the pixel electrodes arranged in a matrix, and the fixed potential side capacitance electrode is the pixel potential side capacitance. The electro-optical device according to claim 1, wherein the electro-optical device is arranged between an electrode and the data line, and is formed along at least one data line of the plurality of data lines. 7. The fixed potential side capacitance electrode is formed in a lattice shape when seen in a plan view.
The electro-optical device according to. 8. The data line formed along the fixed capacitance electrode includes a data line located at both ends of the set of data lines to which an image signal is to be temporarily supplied. The electro-optical device according to claim 6 or 7. 9. The electro-optical device according to claim 1, wherein the pixel potential side capacitance electrode is made of a light shielding material. 10. The electro-optical device according to claim 9, wherein the pixel potential side capacitance electrode has a multilayer structure. 11. The fixed potential side capacitance electrode has a thickness of 5
It is 0-500 nm, It is characterized by the above-mentioned.
The electro-optical device according to any one of 0. 12. The electricity according to claim 1, wherein the surface of the interlayer insulating film located under the fixed potential side capacitance electrode is subjected to a planarization treatment. Optical device. 13. The pixel potential side capacitance electrode, instead of or in addition to the fixed potential side capacitance electrode, is made of a transparent conductive material, according to any one of claims 1 to 8 or 11 or 12. The electro-optical device according to. 14. An electronic apparatus comprising the electro-optical device according to claim 1. Description: