JP2003315788A - Semitransmission type liquid crystal display and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semitransmission type liquid crystal display having satisfactory reflection characteristics, high reliability and high degree of freedom for setting the balance between reflection display and transmission display and to provide a method for easily manufacturing the same. <P>SOLUTION: In the semitransmission type liquid crystal display having a liquid crystal layer between a pair of substrates, a TFT 230 as a switching element, a laminated electrode 219 consisting of a light shielding film 211 having a light transmission part and a transparent conductive film 210, an insulation film 420 covering the laminated electrode 219 and having a projecting and recessed shape and a reflection part pixel electrode 423 in conduction with a transmission part pixel electrode 216 of the laminated electrode 219 are formed on an array side substrate 200. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to personal digital assistants such as personal computers and mobile computers,
The present invention relates to a liquid crystal display device used as a display means of a liquid crystal television or the like, and more particularly to a transflective liquid crystal display device for both transmission and reflection, which is preferably used for a mobile phone, a PDA and the like, and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, a reflection type liquid crystal display device has been mainly used as a display means for portable information terminals, mobile phones and the like, which are required to be lightweight and have low power consumption. However, since the reflective liquid crystal display device reflects external light for displaying, it has a big problem that visibility is extremely deteriorated in a dark room or in a dark environment such as at night.

Therefore, in order to solve such a problem, a transflective liquid crystal display device for both transmissive and reflective types has been proposed. The transflective liquid crystal display device has both transmissive and reflective functions and has high visibility in both bright and dark environments. Among such semi-transmissive liquid crystal display devices, many reflective diffusers have been developed particularly for the purpose of improving the performance of reflective display.

For example, Japanese Unexamined Patent Publication No. 10-319422 proposes a diffuse reflector using a photosensitive resin. Further, JP-A-10-311982 proposes to simplify the manufacturing process of the reflective diffuser plate.

Generally, in a semi-transmissive liquid crystal display device, a rectangular transmissive portion is provided in the center of a pixel of a part of a reflecting plate having an uneven shape. However, in such a structure, the gate signal wiring and the common signal wiring portion cannot be used as a transmissive portion, so that the reflectance at the time of reflection and the transmittance at the time of transmission are not compatible. Therefore, there is a problem that the degree of freedom in setting balance between reflective display and transmissive display is small.

In view of this, Japanese Patent Application Laid-Open No. 2001-75091 proposes a liquid crystal display device in which the degree of freedom in transmission and reflection is increased to improve the quality of reflective display and transmissive display.

[0007]

However, although Japanese Patent Laid-Open No. 10-311982 proposes to simplify the production of the above-mentioned reflection diffusion plate, it does not include a light shield composed of a gate signal wiring, a common signal wiring, an island pattern, etc. It is necessary to form the conductive film so as to cover almost the entire area of the picture element; the gate signal wiring, the common signal wiring, and the island-shaped pattern must be formed in the same layer; It gets smaller. Therefore, a leak defect is likely to occur among the gate signal wiring, the common signal wiring, and the island pattern, which causes a reduction in yield. Further, since two insulating layers are required and a step for providing a contact hole in the first insulating layer and the second insulating layer is required, the manufacturing process is still complicated and the number of steps is increased. I have a problem. Further, the publication does not propose a transflective liquid crystal display device.

Further, in Japanese Patent Application Laid-Open No. 2001-75091, although a structure for improving the display quality of reflection and transmission is proposed, a storage capacitor is not formed and retention failure due to charge loss during drive retention, It has a problem of low reliability.

The present invention has been made in view of the above problems, and an object thereof is semi-transmission, which has good reflection characteristics, is highly reliable, and has a high degree of freedom in setting balance between reflective display and transmissive display. A liquid crystal display device and a simple manufacturing method thereof are provided.

[0010]

In order to solve the above-mentioned problems, a semi-transmissive liquid crystal display device according to the present invention has a liquid crystal layer between a pair of substrates. A switching element, a laminated structure of a light-shielding film having a light transmitting portion and a transparent conductive film, which functions as an auxiliary capacitance electrode and a pixel electrode of a transmitting portion, and an uneven shape covering the laminated electrode. And a reflective portion pixel electrode that covers the insulating layer and is electrically connected to the transparent portion pixel electrode of the laminated electrode.

According to the above arrangement, the reflective pixel electrode is formed so as to be electrically connected to the transmissive pixel electrode of the laminated electrode. Therefore, both the reflective display and the transmissive display can be performed by keeping the reflective pixel electrode and the transmissive pixel electrode at the same potential. If the above configuration is not adopted, it is necessary to provide a contact portion with the drain electrode for each of the reflective pixel electrode and the transmissive pixel electrode, which reduces the effective area of the reflective pixel electrode and the transmissive pixel electrode. Resulting in.

Further, since the insulating layer has an uneven shape, the reflective pixel electrode covering the insulating layer also has an uneven shape. Therefore, since the reflective portion pixel electrode is not flat, it hardly depends on the incident angle of light, and good display characteristics having scattering characteristics can be obtained.

Further, since the auxiliary capacitance electrode is formed, there is no fear of holding failure and a highly reliable transflective liquid crystal display device can be provided.

In order to solve the above-mentioned problems, the semi-transmissive liquid crystal display device of the present invention is characterized in that, in addition to the above-mentioned constitution, a removing portion is formed in the light-shielding film.

According to the above structure, a plurality of removed portions are formed on the light-shielding film to form a transmissive pixel electrode (that is, a transmissive display area) that contributes to transmissive display. Therefore, if the number of removed portions is increased, the transmissive display area can be increased, and if the number of removed portions is decreased, the reflective area can be increased. That is, the area ratio of the transmissive pixel electrodes to the reflective pixel electrodes can be arbitrarily set, and a semi-transmissive liquid crystal display device having a high degree of freedom in balance setting of reflective display and transmissive display can be provided.

In order to solve the above problems, the semi-transmissive liquid crystal display device of the present invention is characterized in that, in addition to the above structure, the laminated electrode is patterned in an island shape.

According to the above structure, by patterning the light-shielding film in an island shape, the area of the transmissive pixel electrode (that is, the transmissive display region) contributing to transmissive display can be increased. That is, the area ratio of the transmissive pixel electrodes to the reflective pixel electrodes can be arbitrarily set, and a semi-transmissive liquid crystal display device having a high degree of freedom in balance setting of reflective display and transmissive display can be provided.

In order to solve the above-mentioned problems, in the semi-transmissive liquid crystal display device of the present invention, in addition to the above structure, the laminated electrode and the gate signal wiring are superposed on each other via an insulating layer. Is characterized in that an auxiliary capacitance electrode is formed.

According to the above structure, the auxiliary capacitance can be easily formed by the structure in which the laminated electrode and the gate signal wiring are overlapped. Therefore, it is possible to provide a highly reliable semi-transmissive liquid crystal display device without fear of holding failure. In addition, since the overlapping portion can also be a display area, the pixel area can be further increased. The gate signal wiring supplies a voltage to the switching element at the previous stage or the next stage, for example.

In order to solve the above-mentioned problems, the semi-transmissive liquid crystal display device of the present invention has, in addition to the above-mentioned constitution, the above-mentioned laminated electrode and the common signal wiring made of a light-shielding film via an insulating layer. It is characterized in that the auxiliary capacitance is formed by overlapping.

According to the above structure, by patterning the insulating layer by backside exposure, it is possible to form the reflective pixel electrode on the common signal electrode via the insulating layer. Therefore, the area of the reflective pixel electrode (that is, the reflective display region) can be made large, and the brightness of the reflective display can be improved.

In order to solve the above-mentioned problems, the semi-transmissive liquid crystal display device of the present invention has, in addition to the above-mentioned structure, a removal section formed in the gate signal wiring, and the removal section is provided in the laminated electrode. It is characterized in that it is arranged in the region of the light transmitting portion of the light shielding film.

According to the above structure, the removal portion is arranged in the gate signal wiring in the region of the light transmission portion of the light shielding film. Here, “arranged in the region” means that the light transmitting portion of the light shielding film is at least partially aligned with the removal portion of the gate signal wiring, and the light transmitting portion of the light shielding film and the gate signal wiring are completely formed. It indicates that the removal part may match. In this way, the area of the transparent pixel electrode can be increased,
The brightness of transmissive display can be improved.

That is, since the reflective pixel electrode and the transmissive electrode can be provided on the gate signal wiring, the degree of freedom in setting the area ratio of the reflective pixel electrode and the transmissive pixel electrode can be improved. Therefore, the area of the reflective pixel electrode and the area of the transmissive pixel electrode can be adjusted according to the application.

In order to solve the above-mentioned problems, the semi-transmissive liquid crystal display device of the present invention has, in addition to the above-mentioned structure, a removal section formed in the above-mentioned common signal wiring, and the light-shielding film of the above-mentioned laminated electrode. It is characterized in that it is arranged in the region of the light transmitting portion in.

According to the above structure, when the insulating layer is patterned by backside exposure, the insulating layer can be laminated on the common signal wiring, and the reflective portion picture element electrode can be formed in that portion. The area of the partial pixel electrode can be increased, the brightness of the reflective display can be improved, and the area of the transparent pixel electrode can be secured.

Therefore, since the reflective pixel electrode and the transmissive electrode can be provided on the common signal wiring, the degree of freedom in setting the area ratio of the reflective pixel electrode and the transmissive pixel electrode can be improved. . Therefore, the area of the reflective pixel electrode and the area of the transmissive pixel electrode can be adjusted according to the application.

In order to solve the above-mentioned problems, a method of manufacturing a transflective liquid crystal display device according to the present invention is a method of manufacturing a transflective liquid crystal display device in which a liquid crystal layer is present between a pair of substrates. A step of forming a laminated electrode having a laminated structure of a light-shielding film having a removed portion and a transparent conductive film and functioning as an auxiliary capacitance electrode and a transparent portion pixel electrode; and an insulating layer on the laminated electrode. A step of forming, a step of removing a portion other than the laminated layer by exposing from the side opposite to the side on which the insulating layer is formed, and a conductive portion to the transparent pixel electrode of the laminated electrode on the insulating layer. And a step of forming a reflective pixel electrode.

In order to solve the above-mentioned problems, the method of manufacturing a semi-transmissive liquid crystal display device according to the present invention is a method of manufacturing a semi-transmissive liquid crystal display device in which a liquid crystal layer is present between a pair of substrates. A step of forming a laminated electrode having a laminated structure of an island-shaped light-shielding film and a transparent conductive film, which functions as an auxiliary capacitance electrode and a transparent pixel electrode on the substrate, and above the laminated electrode. A step of forming an insulating layer on the insulating layer, a step of removing a portion other than the laminated layer by exposing from the side opposite to the side on which the insulating layer is formed, and a transparent portion picture of the laminated electrode on the insulating layer. And a step of forming a reflective pixel electrode that is electrically connected to the elementary electrode.

According to the above method, since the patterning of the insulating layer can be performed by the method of backside exposure, the number of insulating layers is one. Further, the laminated electrode can be formed in the same process as the formation of the source signal wiring. That is, unlike the prior art, only one insulating layer is required, and therefore the manufacturing process including the insulating layer forming process can be simplified. Therefore, the manufacturing process is very simple and the cost merit is obtained. That is, the manufacturing cost can be reduced.

Further, when the insulating layer having the removed portion is patterned, it is possible to expose from the back surface of the substrate by using the lower light shielding region as a mask pattern. This eliminates the need for a photomask and enables collective exposure by a large-scale exposure device, thereby eliminating joints and display unevenness that occur in the case of stepper exposure. Furthermore, the auxiliary capacitance can be easily formed, and a transflective liquid crystal display device having good display quality can be provided.

[0032]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [Embodiment 1] An embodiment of the present invention will be described with reference to FIGS. 1 to 4.
It is as follows.

The transflective liquid crystal display device of this embodiment is a transflective liquid crystal display device in which the switching element is a thin film transistor (TFT). First, the configuration of the transflective liquid crystal display device will be described with reference to FIGS. 1 and 2.
Note that FIG. 1 is a plan view of the array-side substrate 200, and FIG.
Shows a cross-sectional structure of the transflective liquid crystal display device (cross section AA in FIG. 1). In the following description, the substrate 2 will be referred to for each member arranged on the array-side substrate 200.
The direction closer to 01 (the direction away from the color filter side substrate 300) is the lower side, and the direction away from the substrate 201 (the direction closer to the color filter side substrate) is the upper side.

As shown in FIG. 2, the semi-transmissive liquid crystal display device of this embodiment has a structure in which the liquid crystal layer 250 is sandwiched between the array side substrate 200 and the color filter side substrate 300. Although not shown, a spacer may be inserted between the array side substrate 200 and the color filter side substrate 300.

As shown in FIGS. 1 and 2, the array side substrate 200 includes a substrate 201, a gate signal wiring 204 (FIG. 1), a common signal wiring 205 (FIG. 1), and a source signal wiring 2.
15, thin film transistor (TFT) 230, laminated electrode 2
19, alignment film 220, insulating layer 420, reflection part picture element electrode 4
It is composed of 23.

The array side substrate 200 has a gate signal wiring 204 and a source signal wiring 2 on the substrate 201 (FIG. 2).
15 is formed. Then, the TFT 230 is provided at a position where the gate signal wiring 204 and the source signal wiring 215 intersect.
Is provided. As will be described later, the gate signal wiring 204 and the common signal wiring 205 are patterned so that circular removal portions 206 are randomly arranged. As for the positional relationship between the gate signal wiring 204 and the source signal wiring 215, the source signal wiring 215 may be arranged above the gate signal wiring 204, or the source signal wiring 215 may be arranged below the gate signal wiring 204. May be.

The common signal wiring 205 is made of a light-shielding material and is for forming an auxiliary capacitance for holding the data given to the picture element. A voltage having the same potential as that of the counter electrode 303 provided on the color filter side substrate 300 is applied to the common signal wiring 205, and serves as an electrode that forms an auxiliary capacitance at the time of driving a liquid crystal like an auxiliary capacitance electrode 217 described later. There is a function of.

The line widths of the gate signal wiring 204 and the common signal wiring 205 are not particularly limited, but the display area can be increased by reducing the line width.

The TFT 230 includes a gate electrode 203, a gate insulating layer 207, a semiconductor layer 208, and an n-type semiconductor layer 20.
9, a source electrode 213 and a drain electrode 214.

The laminated electrode 219 has a laminated structure of a transparent conductive film 210 and a light-shielding film 211, and has a TFT 230.
Function as a drain electrode of. Then, the light shielding film 21
1 is provided with a plurality of removal parts 206 (circular holes). As described above, the light-shielding film 211 is formed on the plurality of removal parts 20.
6, the transparent conductive film 210 and the light-shielding film 21 are included.
There is a part where 1 and 1 are stacked and a part where 1 is not stacked. Here, the transparent conductive film 210 and the light shielding film 21
The region where 1 and 1 function as the auxiliary capacitance electrode 217, and by removing the light-shielding film 211, only the portion of the transparent conductive film 210 that does not have the light-shielding film 211 serves as the transmissive pixel electrode 216. Function. Therefore, these are combined to form a laminated electrode 219. Hereinafter, the laminated electrode 2
In the case where only one of the electrodes 19 is shown, it may be used as the transparent pixel electrode 216 or the auxiliary capacitance electrode 217.

The transparent conductive film 210 and the light shielding film 2
As shown in FIG. 2, 11 may have a structure in which the transparent conductive film 210 is stacked on the light-shielding film 211, instead of the structure in which the light-shielding film 211 is stacked on the transparent conductive film 210.

The insulating layer 420 is at least the TFT 230.
And some of the signal wiring is covered. In other words, the insulating layer 420 is present on the light shielding film 211, and the transparent conductive film 2
It is formed so that it does not exist on 10.

The reflective pixel electrode 423 is made of a material having light reflectivity and is electrically connected to the laminated electrode 219. That is, the reflective pixel electrode 423 is formed on the insulating layer 420 so as to be electrically connected to the transparent conductive film 210, and functions as a reflective pixel electrode. By electrically connecting the reflective pixel electrode 423 to the transparent conductive film 210, the reflective pixel electrode and the transmissive pixel electrode can be kept at the same potential, and both reflective display and transmissive display can be performed.

The transmissive pixel electrode 216 (corresponding to the transparent conductive film 210 in the portion where the light shielding film 211 is removed) in which the insulating layer 420 is not laminated transmits backlight light (not shown), This contributes to the transparent display. Also,
The reflective pixel electrode 423 on the insulating layer 420 reflects / scatters incident light from the outside of the liquid crystal display device and contributes to reflective display. As described above, since the laminated electrode 219 is provided with the removed portion 206, the reflective pixel electrode 42
3 has an uneven shape, and the effect of scattering reflection is obtained.
In other words, since the reflective portion picture element electrode 423 is not flat, it is less dependent on the incident angle of light, and good display characteristics having scattering characteristics can be obtained.

As described above, the transmissive pixel electrode 216 (corresponding to the transparent conductive film 210 in the portion where the light shielding film 211 is removed) and the reflective pixel electrode 423 correspond to the display area (pixel area). .

In this embodiment, the laminated electrode 21
9 is configured to overlap the gate signal wiring 204 and the common signal wiring 205 via the insulating layer 420. That is, the reflection part picture element electrode 423 has a structure in which the reflection part picture element electrode 423 is superposed on the gate signal wirings 204 of its own stage and the previous stage or the next stage. As a result, it is possible to obtain the transmissive pixel electrode 216 and the reflective pixel electrode 423 as large as possible and contribute to the display. In the present embodiment, the gate signal wiring 2 is formed below the reflective pixel electrode 423 with the insulating layer 420 interposed therebetween.
04 and the common signal wiring 205 are provided. However, since the gate signal wiring 204 has a sufficiently short time during which the voltage is applied, the influence of the capacitive coupling on the display can be ignored even with such a configuration.

Further, the laminated electrode 219 can be configured such that the area where it overlaps with the gate signal wiring 204 is reduced or it does not overlap. That is, the reflection part picture element electrode 423 is superposed only on the gate signal wiring 204 of the previous stage or the next stage, or which gate signal wiring 2
It is also possible to adopt a configuration that does not overlap 04. For example, when the insulating layer 420 interposed between the reflective portion pixel electrode 423 and the protective film has an insufficient thickness, parasitic capacitance occurs and good display quality cannot be obtained.
It is preferable that the structure 23 does not overlap with the gate signal wiring 204 in the previous stage or the next stage, or any gate signal wiring 204. As a result, the problem due to the capacitance between the gate signal wiring 204 and the stacked electrode 219 can be eliminated.

The color filter side substrate 300 is the substrate 30.
1, color filter 302, counter electrode 303, alignment film 3
It is composed of 04.

Further, as the liquid crystal layer 250, a guest-host type liquid crystal or the like can be used.

Next, a method of manufacturing the transflective liquid crystal display device according to this embodiment will be described. The present invention is not limited to this. As shown in FIGS. 1, 3 and 4, the transflective liquid crystal display device according to the present embodiment can be manufactured by the following steps (1) to (15).

(1) First, as shown in FIG. 3A, a Ta film was formed as a metal film 202 on an insulating transparent glass substrate 201 by a sputtering method. In addition,
The substrate 201 is not particularly limited as long as it is insulative, and plastic or the like can be used instead of glass. Further, the thickness of the metal film 202 is 1500Å ~
It may be 5000 Å, and in this embodiment, it is 3000 Å. In addition to the Ta film, the metal film 202 is made of Ti, M
It is also possible to use o, Al, W, or alloys thereof.

(2) Subsequently, as shown in FIG.
The metal film 202 is patterned to form the gate electrode 20.
3, a gate signal wiring 204 (not shown), and a common signal wiring 205 (not shown) for forming an auxiliary capacitance were formed. At this time, the gate signal wiring 204 and the common signal wiring 205 are patterned so that a plurality of removed portions 206 (circular holes) are randomly arranged.

Here, the gate electrode 203, the gate signal wiring 204, and the common signal wiring 205 may be formed of the same metal metal film 202 or different metal films.

The ratio occupied by the removal portion 206 is 1 with respect to the area of the gate signal wiring 204 and the common signal wiring 205.
It may be performed so as to be 0 to 50%.

The shape of the removed portion 206 has a diameter of 3 to 15 μm, preferably 5 to 10 μm when viewed from above.
It may be circular. When the diameter is reduced, a sufficient gap can be secured between the patterns, so that there is no risk of leak failure and a high yield can be obtained. The shape of the removing unit 206 is not limited to the circular shape, and may be a shape other than the circular shape (for example, a polygonal shape). If the shape of the removing unit 206 is other than a circular shape, it may have directivity in reflective display, and thus the removing unit 206 may be used properly according to the application. In this embodiment, the shape of the removed portion 206 is a circle having a diameter of 5 μm. The removing unit 206 contributes to the transmissive display.

The above "patterning" means a series of steps of photolithography, etching, and resist stripping.

(3) Next, as shown in FIG. 3C, the gate insulating layer 207, the semiconductor layer 208, and the n-type semiconductor layer 209 were successively formed in this order by the plasma CVD method. The thickness of each gate insulating layer 207 is 1000Å to 5
000Å, the semiconductor layer 208 is 1000Å to 2500Å,
The n-type semiconductor layer 209 may have a thickness of 100Å to 700Å. In this embodiment, the gate insulating layer 207 has a thickness of 3000 Å
SiNx, the semiconductor layer 208 is 2000 Å amorphous silicon, and the n-type semiconductor layer 209 is 500 Å n-type amorphous silicon.

The gate insulating layer 207 is made of SiO ₂ , S.
It is also possible to stack iNxOy, SiNx, and mixtures thereof. The semiconductor layer 208 and the n-type semiconductor layer 209 are amorphous or polycrystalline (for example,
Polysilicon, etc.). When polycrystal is used for the semiconductor layer, electron mobility can be made faster than when amorphous silicon is used.

(4) Then, as shown in FIG.
Patterning was performed on the gate electrode 203 so that the semiconductor layer 208 and the n-type semiconductor layer 209 were island-shaped.

(5) Next, as shown in FIG. 3E, a transparent conductive film 210 and a light-shielding film 211 were continuously formed by a sputtering method. The transparent conductive film 210 has a film thickness of 500Å to 2000Å, and the light-shielding film 211 has a film thickness of 1500Å to each.
It can be 4500Å. In addition, in this embodiment, the transparent conductive film 210 is made of ITO (In-S) of 1000 Å.
n-O, Indium Thin Oxide), the light-shielding film 211 is 300
A Ta film of 0Å was used. Further, an amorphous oxide film In—Zn—O is used as the transparent conductive film 210, and T is used as the light shielding film 211.
It is also possible to use i, Mo, Al, W, or alloys thereof.

(6) Next, as shown in FIG. 3F, the transparent conductive film 210 and the light shielding film 211 were sequentially patterned. The light-shielding film 211 is provided with a removing section 206. The removing unit 206 provided at this time was made to match the removing unit 206 provided in the gate signal line 204 and the common signal wiring 205 in the above step (2), but the removing unit 206 in the above step (2). The position is not particularly limited as long as it is provided in the area. When the removing section 206 formed in this step and the removing section 206 provided in the gate signal line 204 and the common signal wiring 205 provided in the step (2) are aligned with each other, the transmissive display area can be increased. Thus, the source signal wiring 215 and the laminated electrode 219 were formed.

In this embodiment, the transparent conductive film 210 is used as the lower layer and the light shielding film 211 is used as the upper layer. However, the light shielding film 211 may be used as the lower layer and the transparent conductive film 210 may be used as the upper layer. That is, a structure may be adopted in which the transparent conductive film 210 is formed and patterned after the light shielding film 211 is formed and patterned by sputtering.

(7) Next, as shown in FIG. 3G, the n + type semiconductor layer 209 and the semiconductor layer 208 in the channel portion between the gate electrode 203, the source signal wiring 215 and the drain electrode 214 are removed by etching. did. At this time,
The semiconductor layer 208 is not entirely etched but is etched so that about 1000 Å remains. This allows the potential of the gate electrode 203 to flow to the source electrode 213 and the drain electrode 214.

(8) Next, as shown in FIG. 3H, SiNx to be the protective film 212 is deposited by the plasma CVD method and patterned, and the terminal portion (not shown) and the transmission of the laminated electrode 219. Protective film 212 on partial pixel electrode 216
(SiNx film) was removed. The thickness of the protective film 212 is preferably 1000Å to 7000Å, and in this embodiment, it is set to 1500Å.

(9) Next, a method for forming the reflective pixel electrode 423 will be described with reference to FIG. First, FIG.
As shown in (a), a photosensitive resin was applied as the insulating layer 420 by a spin coating method to a film thickness of about 2.0 μm.
Note that the film thickness is not limited to this, and can be changed as appropriate. Laminated electrode 219 and gate signal wiring 20
3. Using the light shielding area such as the common signal wiring 205 as a mask,
The back surface of the substrate 201 is exposed. In this case, since the back surface exposure device is used for exposure, it is not necessary to use a stepper, and the shape of the insulating layer 420 does not have joint irregularity.
In addition, stepper shot splicing unevenness in reflective display does not occur.

(10) Subsequently, as shown in FIG. 4B, development was performed using a developing solution, and patterning was performed so that the insulating layer 420 remained only on the light shielding film 211.

(11) Next, as shown in FIG.
When the heat treatment is performed at 200 ° C. for 1 hour, the insulating layer made of the photosensitive resin is smooth and rounded due to the heat drop. The heat treatment conditions such as heating temperature and heating time are not particularly limited.

(12) Then, as shown in FIG. 4D, the reflective pixel electrode 423 is formed by the sputtering method.
The film was formed to a film thickness of 500Å to 5000Å and patterned. In this embodiment, Al is used as the reflective pixel electrode 423, and the film thickness is set to 2000Å. At this time, the reflective pixel electrode 423 overlaps with the transmissive pixel electrode 216 (that is, the transparent conductive film 210). As a result, the reflective pixel electrode and the transmissive pixel electrode can be kept at the same potential, and both reflective display and transmissive display can be performed. Further, the reflection part picture element electrode 423 is not particularly limited as long as it is a metal film having a high reflectance, and in addition to Al, for example, Al
Alloys of Ag, Ag, Pt and the like can be used.

(13) Finally, although not shown, an alignment film 220 is formed on the reflective pixel electrode 423,
The transflective array side substrate 200 can be manufactured.

(14) The array-side substrate 200 manufactured by the steps (1) to (13) in this manner, and the color filter 302 on the substrate 301, which faces the array-side substrate 200, as shown in FIG. The electrode 303 and the color filter substrate 300 including the alignment film 304 were attached to each other via a spacer.

(15) Then, the liquid crystal layer 250 is sealed between the array substrate 200 and the color filter side substrate 300. In this embodiment, the guest-host type liquid crystal is used as the liquid crystal 250, but other liquid crystal such as TN liquid crystal can be used.

By the steps (1) to (15) described above, the semi-transmissive liquid crystal display device of this embodiment can be manufactured.

As described above, according to the semi-transmissive liquid crystal display device of this embodiment, the reflective pixel electrode 423 has the light-shielding film 2.
Since it is electrically connected to 10, the reflective portion picture element electrode and the transmissive portion picture element electrode can be kept at the same potential, and both reflective display and transmissive display can be performed.

Further, since the common signal line 205 is provided to form the auxiliary capacitance, a transflective liquid crystal display device having good display quality and high reliability can be provided.

When patterning the insulating layer, it is possible to perform exposure from the back surface of the substrate using the lower light shielding region as a mask. This eliminates the need for a photomask and enables collective exposure by a large-scale exposure device, and can eliminate splicing unevenness during reflective display that occurs during stepper exposure. Further, unlike the conventional case, only one insulating layer is required, so that the manufacturing process including the insulating layer forming process can be simplified.
Further, unlike the conventional case, since there is no contact hole, a process for making a contact hole is not required. Therefore, the manufacturing process is very simple and the cost merit is obtained. That is, the manufacturing cost can be reduced.

Further, since the gate signal wiring and the common signal wiring have the removed portion, it is not necessary to cover the whole area of the picture element with the light shielding film. Further, since the gate signal wiring and the common signal wiring have a sufficient space, it is possible to make the structure in which a defect does not easily occur. Therefore, it is unlikely that a leak failure will occur, and a high yield can be obtained.

In FIG. 1, the area mainly surrounded by the gate signal wiring 204 and the source signal wiring 215 is a picture element area (display area), of which the shaded area corresponds to the reflective display area and is a white area. Corresponds to the transparent display area. The same applies to the common signal wiring 205. The same applies to FIGS. 5, 6 and 7 described later.

[Second Embodiment] The following will describe another embodiment of the present invention in reference to FIG. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment will be designated by the same reference numerals, and the description thereof will be omitted.

FIG. 6 is a partial plan view of the transflective liquid crystal display device of this embodiment. In the present embodiment, the transparent conductive film 21
0 and a laminated electrode 2 having a laminated structure of the light shielding film 211
19 is different from the first embodiment in that the light shielding film 211 in 19 is not provided with the removed portion 206 but has the light shielding film 218 having an independent island pattern. Light-shielding film 218
Corresponds to the light-shielding film 211 in FIG.

As in the first embodiment, the gate signal wiring 204 and the common signal wiring 205 are provided with the removing section 206. In addition, the removed portion 206 is the transparent conductive film 2
10 and the light-shielding film 211 are present in a region of the laminated electrode 219 having no light-shielding film 211 (that is, a region of the transparent conductive film 210).

The light-shielding film 218 preferably has a circular shape with a diameter of 3 to 10 μm when viewed from above. The light-shielding film 218 is not limited to the circular shape and may be a polygonal shape. When the polygonal shape is used, the reflective display may have directivity, so that it can be used properly according to the application. In this embodiment, the circular shape has a diameter of 3 μm.

As for the method of manufacturing the semi-transmissive liquid crystal display device of the present embodiment, the same method as in the first embodiment is used to manufacture the semi-transmissive liquid crystal display device.

As described above, in the semi-transmissive liquid crystal display device of this embodiment, on the gate wiring 204 and the common signal wiring 20.
5 is a structure in which the reflection part picture element electrode 423 is arranged on the upper surface of FIG. As a result, the area of the reflective pixel electrode can be increased. Further, since the light-shielding film 218 is provided in the shape of an independent island, it is possible to increase the area of the transmissive pixel electrode 216. Therefore, it is possible to secure the brightness during the transmissive display in the reflective display and the transmissive display. Therefore, it is possible to improve the degree of freedom in setting balance between reflective display and transmissive display.

Note that the reflective pixel electrode 423 may not be arranged on the gate signal wiring 204 and the common signal wiring 205. As a result, it is possible to further secure the brightness during the transmissive display.

[Third Embodiment] The following will describe another embodiment of the present invention in reference to FIG. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment will be designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 5, the semi-transmissive liquid crystal display device of this embodiment has a structure in which an auxiliary capacitance is formed by superimposing an auxiliary capacitance electrode 217 on the gate signal wiring 204. That is, the gate signal wiring 2 in the previous stage or the next stage
By stacking the laminated electrode 219 on 04 with the insulating layer 420 interposed therebetween, an auxiliary capacitance is formed. Note that the semi-transmissive liquid crystal display device of this embodiment also has a configuration in which the common signal wiring 205 is not provided in the first embodiment.

The method of manufacturing the transflective liquid crystal display device of this embodiment is substantially the same as that described in the first embodiment. However, since the common signal wiring 205 is not provided, patterning is performed in the above step (2) to form the gate electrode 203 and the gate signal wiring 204, but not the common signal wiring 205.
Is different from. Other steps can be manufactured by the same method as in the first embodiment.

As described above, since the semi-transmissive liquid crystal display device of this embodiment does not have the common signal wiring 205, the removed portion 206 of the light shielding film 211, that is, the transmissive pixel electrode that contributes to the transmissive display. The area of 216 can be increased. Therefore, it can be preferably used mainly when it is often used in a bright environment.

[Fourth Embodiment] The following will describe another embodiment of the present invention in reference to FIG. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment will be designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 7, the transflective liquid crystal display device of this embodiment has a structure in which the auxiliary capacitance electrode 217 is superposed on the gate signal wiring 204 to form an auxiliary capacitance. Further, similar to the third embodiment, the common signal wiring 205
The laminated electrode 219 is superposed on the gate signal wiring 204 at the previous stage or the next stage through the insulating film 420. Further, the light shielding film 218 of the laminated electrode 219 is independently formed in an island shape. The semi-transmissive liquid crystal display device of the present embodiment also has a configuration in which the common signal wiring 205 is not provided in the second embodiment.

The semi-transmissive liquid crystal display device of this embodiment can be manufactured by using the same method as that of the first embodiment.

As described above, in the present embodiment, the reflective portion picture element electrode 4 is formed on the gate signal wiring 204 in the preceding stage or the succeeding stage.
By disposing 23, the area of the reflective pixel electrode can be increased. As a result, the degree of freedom in setting the balance between reflective display and transmissive display can be obtained.

It is also possible to adopt a structure in which the reflection portion picture element electrode 423 is not arranged on the gate signal wiring 204, or a structure in which the reflection portion picture element electrode 423 is arranged on the gate signal wirings 204 in the preceding and succeeding stages.

The present invention is not limited to the above-described embodiments, but various modifications can be made within the scope of the claims, and the technical means disclosed in the different embodiments can be combined appropriately. Such embodiments are also included in the technical scope of the present invention.

[0095]

As described above, the semi-transmissive liquid crystal display device of the present invention has a laminated structure of a switching element, a light-shielding film having a light transmitting portion, and a transparent conductive film on one substrate, A laminated electrode that functions as an auxiliary capacitance electrode and a transparent portion pixel electrode, an insulating layer that covers the laminated electrode and has an uneven shape, and a reflective electrode that covers the insulating layer and is electrically connected to the transparent pixel electrode of the laminated electrode. Is formed.

Therefore, there is an effect that both the reflective pixel image electrode and the transmissive pixel electrode can be kept at the same potential to perform both reflective display and transmissive display. If this configuration is not adopted, it is necessary to provide contact portions with the drain electrode and the reflective pixel electrode, respectively, which reduces the effective area of the reflective pixel electrode and the transmissive pixel electrode. .

Further, since the reflection part pixel electrode is not flat, it is less dependent on the incident angle of light, and good display characteristics having scattering characteristics can be obtained.

Further, since the auxiliary capacitance electrode is formed, there is an effect that there is no fear of holding failure and a highly reliable transflective liquid crystal display device can be provided.

The semi-transmissive liquid crystal display device of the present invention has a configuration in which, in addition to the above configuration, a removal portion is formed in the light shielding film.

Therefore, the area ratio of the transmissive pixel electrode to the reflective pixel electrode can be arbitrarily set, and a semi-transmissive liquid crystal display device having a high degree of freedom in balance setting of reflective display and transmissive display is provided. There is an effect that it can be provided.

The semi-transmissive liquid crystal display device of the present invention has a structure in which, in addition to the above structure, the laminated electrode is patterned in an island shape.

Therefore, the area ratio setting of the transmissive pixel electrode to the reflective pixel electrode can be arbitrarily set, and a semi-transmissive liquid crystal display device having a high degree of freedom in balance setting of reflective display and transmissive display is provided. There is an effect that it can be provided.

In the semi-transmissive liquid crystal display device of the present invention, in addition to the above structure, the laminated electrode and the gate signal wiring are
In this configuration, the auxiliary capacitance is formed by overlapping each other via the insulating layer.

Therefore, it is possible to provide a highly reliable semi-transmissive liquid crystal display device without concern about retention failure.
In addition, since the overlapping portion can also be used as the display area, the pixel area can be further increased.

In the semi-transmissive liquid crystal display device of the present invention, in addition to the above structure, the laminated electrode and the common signal line made of a light-shielding film are superposed via an insulating layer to form an auxiliary capacitance. It is a composition.

Therefore, the area of the reflective pixel electrode (that is, the reflective display area) can be made large, and the brightness of the reflective display can be improved.

In the semi-transmissive liquid crystal display device of the present invention, in addition to the above structure, a removal portion is formed in the gate signal wiring, and the removal portion is the light transmission portion of the light shielding film in the laminated electrode. It is the structure arrange | positioned in the area | region.

Therefore, there is an effect that the area of the reflective pixel electrode and the area of the transmissive pixel electrode can be adjusted according to the application.

In the semi-transmissive liquid crystal display device of the present invention, in addition to the above structure, a removal portion is formed in the common signal wiring, and the removal portion is arranged in the light transmission portion region of the light shielding film of the laminated electrode. It is a configured structure.

Therefore, since the reflective pixel electrode and the transmissive electrode can be provided on the common signal wiring, the degree of freedom in setting the area ratio of the reflective pixel electrode and the transmissive pixel electrode can be improved. it can. That is, there is an effect that the area of the reflective pixel electrode and the area of the transparent pixel electrode can be adjusted according to the application.

A method of manufacturing a semi-transmissive liquid crystal display device of the present invention has a laminated structure of a light-shielding film having a removed portion and a transparent conductive film on one substrate, and has an auxiliary capacitance electrode and a transparent pixel electrode. A step of forming a laminated electrode that functions as a step, a step of forming an insulating layer on the laminated electrode, and a step of exposing from a side opposite to the side on which the insulating layer is formed and removing a portion other than the laminated portion. And a step of forming, on the insulating layer, a reflective electrode that is electrically connected to the transmissive pixel electrode of the laminated electrode.

The method of manufacturing a semi-transmissive liquid crystal display device of the present invention comprises a laminated structure of an island-shaped light-shielding film and a transparent conductive film on one substrate, and the auxiliary capacitance electrode and the transmissive portion. The step of forming a laminated electrode functioning as a pixel electrode, the step of forming an insulating layer on the laminated electrode, and the portion other than the exposed and laminated portion other than the side on which the insulating layer is formed are exposed. The method is characterized by including a step of removing and a step of forming, on the insulating layer, a reflective electrode that is electrically connected to the transmissive pixel electrode of the laminated electrode.

Therefore, unlike the conventional case, only one insulating layer is required, and the manufacturing process including the insulating layer forming process can be simplified. Further, unlike the conventional case, since there is no contact hole, a process for making a contact hole is not required. Therefore, the manufacturing process is very simple and the cost merit is obtained. That is, the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is a plan view of an array-side substrate of a transflective liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the transflective liquid crystal display device of FIG.

FIG. 3 illustrates a method of manufacturing the transflective liquid crystal display device of FIG. 1, and FIGS. 3A to 3H are cross-sectional views illustrating a method of manufacturing the array substrate.

4 is a cross-sectional view showing the continuation of FIG. 3 and showing a method for manufacturing the semi-transmissive liquid crystal display device array substrate of FIG. 1;

FIG. 5 is a plan view of another transflective liquid crystal display device array side substrate according to the embodiment of the present invention.

FIG. 6 is a plan view of another semi-transmissive liquid crystal display device array side substrate in the embodiment of the present invention.

FIG. 7 is a plan view of another transflective liquid crystal display device array side substrate according to the embodiment of the present invention.

[Explanation of symbols]

200 Array side substrate (substrate) 201 substrate 202 metal film 203 gate electrode 204 gate signal wiring 205 common signal wiring 206 Removal unit 207 Gate insulating layer 208 semiconductor layer 209 n-type semiconductor layer 210 transparent conductive film 211 Light-shielding film 212 Protective film 213 Source electrode 214 drain electrode 215 Source signal wiring 216 Transmission part pixel electrode (light transmission part) 217 Auxiliary capacitance electrode 218 Light-shielding film 219 laminated electrode 220 alignment film 230 TFT (Switching element) 250 liquid crystal layer 300 color filter side substrate (substrate) 301 substrate 302 color filter 303 Counter electrode 304 alignment film 420 insulating layer 423 Reflector pixel electrode

Continued front page    F-term (reference) 2H091 FA14Y FA16Y FA35Y FB07                       FB08 FC02 FC10 FC26 FC29                       FC30 FD04 FD07 FD12 FD23                       LA03 LA11 LA12 LA17                 2H092 JA26 JA29 JA38 JA45 JA46                       JB05 JB07 JB13 JB24 JB38                       JB51 JB56 KA05 KA12 KA18                       KA23 MA05 MA08 MA13 MA35                       MA37                 5F110 AA16 BB01 CC05 CC07 DD02                       EE03 EE04 EE06 EE44 FF02                       FF03 FF04 FF30 GG02 GG13                       GG15 GG24 GG45 HK03 HK04                       HK07 HK09 HK22 NN72 QQ09

Claims (9)

[Claims] 1. A semi-transmissive liquid crystal display device having a liquid crystal layer between a pair of substrates, which has a laminated structure of a switching element, a light-shielding film having a light transmitting portion, and a transparent conductive film on one substrate. A laminated electrode that functions as an auxiliary capacitance electrode and a transparent portion pixel electrode; an insulating layer that covers the laminated electrode and has an uneven shape; and a reflective portion that covers the insulating layer and that is conductive to the transparent portion pixel electrode of the laminated electrode. A transflective liquid crystal display device characterized in that a pixel electrode is formed. 2. The transflective liquid crystal display device according to claim 1, wherein a removal portion is formed on the light shielding film. 3. The transflective liquid crystal display device according to claim 1, wherein the laminated electrode is patterned in an island shape. 4. The transflective liquid crystal according to claim 1, wherein the laminated electrode and the gate signal line overlap with each other via an insulating layer to form an auxiliary capacitance. Display device. 5. The auxiliary capacitance is formed by superimposing the laminated electrode and a common signal line made of a light-shielding film with an insulating layer interposed therebetween.
A semi-transmissive liquid crystal display device according to item. 6. The removal section is formed in the gate signal wiring, and the removal section is arranged in the region of the light transmission section of the light shielding film in the laminated electrode. 5. The transflective liquid crystal display device according to item 5. 7. The removal section is formed in the common signal wiring, and the removal section is arranged in the region of the light transmission section in the light shielding film of the laminated electrode. 7. The transflective liquid crystal display device according to item 6. 8. A method of manufacturing a semi-transmissive liquid crystal display device having a liquid crystal layer between a pair of substrates, comprising a laminated structure of a light-shielding film having a removed portion and a transparent conductive film on one substrate, A step of forming a laminated electrode functioning as an auxiliary capacitance electrode and a transparent pixel electrode, a step of forming an insulating layer on the laminated electrode, and a step of exposing and laminating from a side opposite to the side on which the insulating layer is formed. A semi-transmissive type, characterized in that it includes a step of removing a portion other than the exposed portion and a step of forming, on the insulating layer, a reflective pixel electrode that is electrically connected to the transmissive pixel electrode of the laminated electrode. Liquid crystal display device manufacturing method. 9. A method of manufacturing a semi-transmissive liquid crystal display device, wherein a liquid crystal layer is present between a pair of substrates, wherein a laminated structure of an island-shaped light shielding film and a transparent conductive film is formed on one substrate. A step of forming a laminated electrode functioning as an auxiliary capacitance electrode and a transparent pixel electrode, a step of forming an insulating layer on the laminated electrode, and an exposure from the side opposite to the side on which the insulating layer is formed. And a step of removing a portion other than the laminated portion, and a step of forming, on the insulating layer, a reflective portion pixel electrode that is electrically connected to the transparent portion pixel electrode of the laminated electrode. Manufacturing method of transmissive liquid crystal display device.