JP2003303950A - Plane detection type solid-state image pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve action speed by reducing the resistance of a scanning line and a signal line, to reduce image noise, and at the same time, to set repair facilitation equal to the conventional one. <P>SOLUTION: At a TFT array section on a glass substrate 201, the acting speed is increased and the image noise is decreased, by using an aluminum alloy in the wiring pattern of the signal line (as in scanning line). On the glass substrate, a terminal section is formed near the termination of the wiring pattern. The terminal section has a terminal pattern 216, formed by the same MoW layer as the capacity line of the TFT array section. Respective wiring patterns of the signal line and the scanning line are extended near the terminal pattern and are electrically connected to the terminal pattern via an ITO film 215, made of the same base as that of a pixel electrode. In this case, a terminal forming portion is also protected, by laminating the ITO film made of the same base as the pixel electrode. The terminal pattern is separated from the wiring patterns, thus facilitating repairing treatment as in the conventional one. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel detection type solid-state image pickup device in which photoelectric conversion pixels are arranged in a matrix for use in, for example, a medical X-ray diagnostic apparatus.

[0002]

2. Description of the Related Art In recent years, in the medical field, there has been a trend toward creating a database of patient medical data for the purpose of prompt and accurate treatment. There is also a demand for a database for image data of X-ray photography, and digitization of X-ray photography images is desired. However, since the conventional medical X-ray diagnostic apparatus uses a silver salt film for photographing, in order to digitize this, the photographed film is developed and then scanned again by a scanner or the like and converted into an electric signal. Digital processing is required, which takes time and effort. Therefore, in recent years, a method of directly digitizing an image using a CCD (charge coupled device) image pickup device of about 1 inch has been put into practical use.

However, for example, when imaging the lungs of a subject, the area required for imaging is 40 cm × 40 cm.
Therefore, an optical device for condensing the light of the entire area on the CCD image pickup device is required, and the increase in size of the device poses a problem. As a method for solving this problem, a flat panel detection type solid-state imaging device has been proposed. As an example of this device, there is an X-ray imaging device called an X-ray flat panel detector (for example, refer to Patent Document 1).

The above flat panel detection type solid-state image pickup device is characterized in that an a-Si TFT (amorphous silicon thin film transistor) is used as a control element of a photoelectric conversion pixel. The structure of this device will be briefly described below.

A flat substrate made of a glass material is used for this device. An insulating layer made of a silicon oxide film is formed on this substrate, and photoelectric conversion pixels made of a capacitive element, a TFT, and an X-ray charge conversion film are formed in a matrix on the insulating layer. Further, a wiring line wiring pattern for supplying a switching control signal to the TFTs of the pixels arranged in the row direction and a signal line wiring pattern for sequentially transmitting the accumulated charges read from the pixels arranged in the column direction are formed. To be done.
This substrate is called a TFT array substrate.

In the device having the above structure, in each pixel, a bias voltage is applied to the capacitive element forming portion through the capacitive line, and charges generated by the X-ray charge conversion film are accumulated in the capacitive element. By sequentially switching-driving the TFTs of each pixel through the scanning line formed in row units, the accumulated charge of the pixel capacitance is sequentially derived to the signal line formed in column units. The accumulated charge of each pixel led to each signal line is amplified and digitally output. This makes it possible to obtain image data of all pixels.

In the above TFT array substrate, scanning lines,
Terminals for connecting to circuit devices such as a drive circuit, an amplifier circuit, and a power supply circuit, which are prepared separately from the substrate, are formed at the respective ends of the signal line and the capacitance line. These terminals are grouped in a predetermined number of units (each terminal is referred to as PAD, and a terminal group (collection of PADs is referred to as PAD group)), for example, are arranged at a high density with a terminal width of 60 μm and a terminal pitch of 100 μm.

TAB is used to connect each terminal to the circuit device.
(Tape Automated Bonding) A method called connection is used. This TAB connection is the PA on the TFT array substrate.
Area D and tape carrier package (TCP: Tape C
a flexible board (hereinafter, TCP) side pad (PAD) area on which a circuit device called an “arrier package” is mounted, and a thermosetting anisotropic conductive adhesive film (ACF: An).
This is a method to realize electrical connection between terminals arranged in high density by thermocompression bonding with isotropic Conductive Film).

Since the TFT array substrate is very expensive, repair is required when a connection error with the TCP occurs. The repair method in this case is as follows:
CP is peeled off from the TFT array substrate, ACF adhered to the surface is peeled off with a solvent, etc.
The CP is thermocompression bonded via the ACF. Therefore, conventionally, the entire wiring pattern including the terminal forming portion is
It is formed of a material that does not easily peel off from the substrate at the time of peeling or peeling ACF, for example, molybdenum (MoW) used for the capacitance line. In addition, indium tin oxide (ITO: in
A transparent conductive film such as dium tin oxide) is laminated.

By the way, the plane detection type solid-state image pickup device is required to reduce high-definition images and image noise. In order to meet this demand, it is essential to reduce the resistance of the signal line that causes image noise and reduce the parasitic capacitance to the signal line. In order to reduce the parasitic capacitance of the signal line, it is desirable to narrow the line width of the scanning line orthogonal to the signal line, and use a low resistance material as a means for thinning the scanning line width while satisfying a predetermined driving speed. Is mentioned. In order to reduce the resistance of the scanning lines and the signal lines, it is desirable to use, for example, an aluminum alloy.

However, materials such as aluminum alloys have a weak degree of bonding with the silicon oxide film. Since terminals for TAB connection are formed at the ends of the wiring patterns forming the scanning lines and the signal lines, when an aluminum alloy is used as the material of the wiring patterns, the wiring layer is peeled off when the ACF is peeled off. Will be done. For this reason, a new terminal structure of the TFT array substrate is required from the viewpoints of easiness of repair and improvement of characteristics of the image pickup device.

[0012] A technique of using an aluminum alloy as a wiring material for elements arranged in a matrix is disclosed in Japanese Patent Laid-Open No. 2004-242242. The following techniques are shown in this document.

For the purpose of speeding up the scanning driving speed accompanying the higher density, the wiring patterns of the scanning lines and the signal lines for each light emitting display element are formed of aluminum alloy. The terminal end of the wiring pattern has a terminal shape for connecting to an external circuit device. The whole is hermetically sealed except for the terminal portion. At this time,
If the aluminum alloy is exposed at the terminal portion, it will be corroded by oxidation, so the terminal portion is covered with a protective film made of a material such as morib.

The technique disclosed in the above-mentioned document relates to a light emitting display, and its technical field is different from that of the flat type solid-state image pickup device of the present invention. Furthermore, there is no requirement to facilitate the repair process of the substrate. Even if the terminal portion shown in the above document is connected by TAB, the wiring layer is also peeled off when the ACF is peeled off because the terminal portion is an aluminum alloy. From this, it is clear that the technique of the above-mentioned document cannot achieve the object of the present invention that the repairability and the characteristic improvement are simultaneously satisfied.

[0015]

[Patent Document 1] USP 4689487

[0016]

[Patent Document 2] Japanese Patent Laid-Open No. 2000-243558

[0017]

As described above,
In the conventional flat panel detection type solid-state imaging device, image noise is a big problem, and reduction of image noise is strongly required. Therefore, it is desired to reduce the resistance of the wiring pattern. Therefore, it is difficult to use a low resistance material.

An object of the present invention is to improve the operation speed by reducing the resistance of the wiring pattern and reduce the image noise, and at the same time, the flat panel detection type solid-state image pickup having the terminal structure which can easily perform the repair work with the external circuit device. To provide a device.

[0019]

In order to solve the above problems, a flat panel detection type solid-state image pickup device according to the present invention includes a flat substrate; and a flat substrate formed on the flat substrate. An array including a plurality of conversion pixels for conversion and storage, a first wiring pattern group for supplying a control signal to the conversion pixels, and a second wiring pattern group for transmitting electric charges read from the conversion pixels. A structure; a T formed on the planar substrate and connected to an end of any one of the first and second wiring pattern groups
A terminal structure provided with a terminal pattern for AB (Tape Automated Bonding) connection; the terminal pattern having a higher degree of coupling with TAB than the material of the wiring pattern;
And a second material having a resistance lower than that of the first material is used for the wiring pattern.

According to the configuration of the present invention, it is possible to optimize the selection of the material of the signal line and / or the scanning line or to realize a low resistance, and thereby reduce the noise of the image pickup device and improve the driving speed. It Further, since the terminal configuration can be made equal to that of the conventional one, the easiness of repair becomes excellent.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a circuit diagram showing a schematic configuration of an X-ray flat panel detector (X-ray image pickup apparatus) which is an embodiment of a flat panel detection type solid-state image pickup apparatus according to the present invention. In FIG. 1, 1
Reference numeral 00 is a board on which the image pickup unit is mounted. 2000 × 2000 radiation-to-charge conversion pixels ei, j forming the imaging unit
(I = 1 to 2000, j = 1 to 2000) are arranged in a matrix. The converted pixels ei, j are a-
It is composed of a SiTFT 101, an X-ray charge conversion film 102, and a capacitor 103 (hereinafter, this pixel formation region will be referred to as a TFT).
Called an array). For the TFT array, scan line 1 per row
05 is provided, and the signal line 106 is provided for each column.

The X-ray charge conversion film 102 and the capacitive element 1
A bias voltage is applied to the circuit 03 from the power supply circuit 104 via terminals TA1 to TA2000. The a-Si
In the TFT 101, the gate electrode is connected to the scanning line 105, the drain electrode is connected to the signal line 106, and the source electrode is connected to the X-ray charge conversion film 102 and the pixel electrode of the capacitor 103.

The terminals of the scanning line 105 are terminals TB1 to T1.
Shift register 10 for driving scanning line via B2000
Connected to 7. The end of the signal line 106 is connected to terminals TC1 to TC2000 via the amplifier 1 for signal detection.
08 is connected. The a-Si TFT 101 is switching-controlled by an on / off control signal from the shift register 107, and connects the pixel electrode to the signal line 106 according to the on signal.

In the X-ray flat panel detector having the above structure, when light (X-ray) is incident, electric charges are generated in each X-ray charge conversion film 102. This charge is accumulated in the capacitor 103. The shift register 107 sequentially supplies a driving current to the scanning lines 105 provided in row units from j = 1 to j = 2000. At this time, all the a-Si TFTs 101 connected to each scanning line 105 are turned on at the same time, and the charge accumulated in the capacitive element 103 of each pixel is led to the signal line 106. Therefore, the charge accumulated in the capacitor 103 is led to the signal line 106 in the order of arrangement from the pixel of j = 1, and the amplifier 1
08. Since the amount of charges generated varies depending on the amount of light incident on the X-ray charge conversion film 102, the amplifier 10
The output amplitude of 8 changes on a pixel-by-pixel basis. The output signal of the amplifier 108 can be converted into a digital image directly by A / D conversion.

As described above, a-Si is used for the control element of each pixel.
In the X-ray flat panel detector using the TFT, an incident X-ray is converted into visible light by a phosphor, and the converted light is converted into electric charge by a charge conversion film of each pixel, or in addition to the indirect conversion method. There is a direct conversion system that directly converts X-rays into electric charges. The X-ray flat panel detector of the direct conversion system and the X-ray flat panel detector of the indirect conversion system have different types of charge conversion films. Direct conversion type charge conversion films include a-Se, a
-Te, it is possible to PbI _2, HgI ₂ or the like is used.

FIG. 2 shows a schematic structure of one pixel in the TFT array of the X-ray flat panel detector. Figure 2
FIG. 2A is a pattern diagram showing its planar structure, and FIG. 2B is a sectional view taken along the line AA ′ in FIG. The specific structure of one pixel of this TFT array is described in detail in Japanese Patent Application Laid-Open No. 11-274446, so a brief description will be given here.

In FIGS. 2A and 2B, a capacitance line (including a capacitance element region) 202 made of molybdenum (MoW) is formed on a glass substrate 201, and a silicon layer is formed on the capacitance line 202. A first insulating layer 203 made of an oxide film (SiOx) is formed. However, the insulating layer 203 is removed from the contact portion of the voltage supply line (not shown) and the like. On the first insulating layer 203, the gate electrode 204 of the readout a-Si TFT, the scanning line 2
05 is formed, and a lead terminal (not shown) is also formed at the same time. A second insulating layer 206 for gate insulation made of a silicon oxide film (SiOx) is formed on these layers.
Is formed. However, the second insulating layer 206 is removed from the through-hole portion such as the lead-out terminal portion.

On the second insulating layer 206, a pixel electrode 207 made of an ITO film is formed in the pixel except the readout a-SiTFT. In the portion where the readout a-Si TFT is formed, a channel forming layer 208 formed of an a-Si film is formed on the second insulating layer 206, and an S for etching stopper is formed.
iNx film 209, source electrode 211 and drain electrode 2
12 is formed. Simultaneously with the formation process of the source electrode 211 and the drain electrode 212, the pixel electrode 207, the signal line 213, the extraction pad (not shown), the voltage supply line (not shown), etc. are also formed. Further, a passivation film, an X-ray charge conversion film, an upper electrode, etc. are formed on the upper layer side, but they are omitted in the drawing.

In this example, by arranging the capacitance line 202 in parallel with the signal line 213, the stray capacitance due to the capacitance line 202 is reduced, and the coupling due to the intersection of the signal line 213 and the capacitance line 202 is achieved. Suppress the influence, signal line 21
The noise generated in No. 3 is reduced.

The terminal groups (pads) drawn from the scanning lines, the signal lines, and the capacitance lines are connected to the corresponding circuit devices by the TAB connection method. FIG. 3A and FIG. 3B show specific examples thereof.

In FIG. 3A, 301 is a TFT array substrate, and a large number of pads by a terminal group drawn from the TFT array region are arranged on the array forming surface (hereinafter, pad region A). Further, 302 is a TCP, and pad regions B arranged in the same width and pitch as the terminal width and the inter-terminal pitch in the pad area A on the substrate 301 side are formed at the back end portion thereof.

Pad area A on the side of the TFT array substrate 301
When connecting the pad area B on the TCP 302 side to each terminal a- with the ACF 303 interposed therebetween as shown in FIG. 3B.
b is opposed to each other, and heat and pressure are applied. ACF303
Is a mixture of conductive particles in an adhesive material, and by thermocompression bonding, the conductive particles are connected to each other only in the portions between the adjacent terminals, thereby electrically connecting the terminals arranged at high density. .

(First Embodiment) In the X-ray flat panel detector having the above-mentioned structure, the structure of the terminal forming portion according to the first embodiment of the present invention will be described.

FIG. 4 is a cross-sectional view showing the structure of the terminal forming portion drawn out from the scanning line. In FIG. 4, the same parts as those in FIG. 2B are designated by the same reference numerals.

In FIG. 4, Si is formed on the glass substrate 201.
A first insulating layer 203 made of Ox is formed, and a scan line 205 made of aluminum or an aluminum alloy is provided thereon. Then, a terminal pattern 216 made of a molybdenum alloy is laminated so as to partially overlap the scanning line end portion.
A second insulating layer 206 made of SiOx and a passivation film (protective layer) 214 made of SiNx are laminated thereon, except for the terminal formation portion, and the ITO film 215 is formed on the terminal formation portion.
Are stacked. Since this structure can be realized in the same processing step, the same applies to the terminals formed at the respective ends of the signal line and the capacitance line.

As described above, the terminals formed at the respective ends of the scanning lines, the signal lines, and the capacitance lines are grouped in a predetermined number of units and arranged in high density, and the terminals and the corresponding terminals of the circuit device are arranged. If the TAB connection method is used for the connection, and a terminal connection error occurs, TAB is used again after peeling
The repair method of connecting is used. Therefore, TC
The terminal forming material is limited so that the terminal forming film is not peeled off from the TFT array substrate when P is peeled off or ACF is peeled off.

On the other hand, for the scanning lines and the signal lines, it is desirable to use a material having a lower resistance, for example, aluminum or an aluminum alloy, for the purpose of improving the scanning driving speed and reducing the image noise due to the signal line resistance. However, a low resistance material such as an aluminum alloy has a weak degree of bonding with a silicon oxide film.

Therefore, in the present embodiment, aluminum or an aluminum alloy is used as a material for forming the wiring patterns of the scanning lines and the signal lines, and aluminum or an aluminum alloy is used as a material for forming the terminal patterns and is bonded to the silicon oxide film. A highly molybdenum alloy is used, and an ITO film is laminated on the terminal pattern to protect and reinforce when the TCP is peeled off or when the ACF is peeled off. As the molybdenum alloy, MoW, which is the same material as the capacity line, can be used.

In the conventional X-ray flat panel detector using the TFT array, the TFT driving speed is limited by the resistance of the scanning line, and although the image noise is large due to the signal line resistance, the resistance is low due to the restriction of the terminal structure. Although it was difficult to use the material, according to the terminal structure of the above embodiment,
(EN) It is possible to easily perform repair work with an external circuit device while improving operating speed and reducing image noise by reducing resistance of scanning lines and signal lines.

(Second Embodiment) FIG. 5A and FIG.
(B) shows the above T as the second embodiment according to the present invention.
5A and 5B show a configuration of a terminal formation portion in the FT array substrate, FIG. 5A is a pattern wiring diagram showing a planar configuration thereof, and FIG. 5B is a BB in the terminal formation portion of FIG. 5A. ′ It is a cross-sectional view. Incidentally, FIG. 5 (a) and FIG. 5 (b)
2A and 2B, the same parts are designated by the same reference numerals, and different parts will be described here.

In the present embodiment, what is particularly noteworthy is that the scanning line and the signal line are made of aluminum alloy having a lower resistance than MoW, and MoW having a high degree of coupling with the silicon oxide film is used at the terminal forming portion. It is in.

A portion BB 'in FIG. 5A is a terminal forming portion at the end of the scanning line. BB 'of this terminal forming part
As shown in FIG. 5B, the glass substrate 201
A terminal pattern 216 made of a MoW layer on the upper terminal formation portion
To form. MoW formed with this terminal pattern 216
The layer is the same layer as the capacitance line 202. This terminal pattern 2
The ends of 16 are extended from the terminal area.

Next, a first insulating layer 203 made of SiOx is formed on the entire surface. At this time, the first insulating layer 203 is prevented from being formed in the pad region of the terminal pattern 216 and a part of the extended portion thereof by masking or the like, and the contact region is formed in advance.

Subsequently, the scanning line 205 made of an aluminum alloy is formed on the first insulating layer 203. Scan line 205
The terminal end of is close to the extended end of the terminal pattern 216. A second insulating layer 206 made of SiOx, S
The protective layer 214 made of iNx is formed. At this time, similarly to the first insulating layer 203, the second insulating layer 206 and the protective layer 214 are formed in the terminal region of the terminal pattern 216 and a part of the extended portion thereof. The contact region is formed in advance. At the same time, the second insulating layer 206 and the protective layer 214 are formed so as not to be formed in a part of the terminal portion of the scan line 205, and a contact region is formed in advance.

An ITO film 215 is laminated on the terminal region of the terminal pattern 216 and a part of the extended portion thereof. At the same time, the ITO film 215 is also laminated on each contact region portion at the end portion of the scanning line 205.

FIG. 5B is a sectional view taken along the line BB ′ of FIG. 5A. The sectional view taken along the line CC ′ of the voltage output terminal forming portion of the signal line termination shown in FIG. 5B has the same structure. Is formed by.

By adopting the above structure, the same MoW as the capacitance line 201 can be used as the terminal base material. That is, the terminal pattern 2 serving as the base of the terminal
16 is formed of the same MoW layer as the capacitance line 201, the signal line 213 and the scanning line 205 extend to the vicinity of the terminal pattern 216, respectively, and the ITO film 215 of the same base material as the pixel electrode is formed.
The terminal pattern 216 made of MoW is electrically connected via. At this time, the IT of the same base material as the pixel electrode is also used in the terminal area.
The O film 215 is stacked. Thereby, the easiness of repair can be made equal to the conventional one while increasing the terminal strength.

Therefore, according to the above embodiment, the noise of the image pickup signal can be reduced by lowering the resistance of the signal line and the scanning line, and the driving speed can be improved, and at the same time, the terminal material can be optimally selected. Therefore, the ease of repair can be maintained at the same level as the conventional one.

The metals used for the scanning lines and the signal lines in the above embodiment are Al and Al alloys (especially Al-Z).
r, Al-Nd, Al-Y alloy). Also,
As a material used for the capacitance line and the terminal, MoTa (molybdenum tantalum) is preferable in addition to MoW from the viewpoint of easy repair.

As the gate insulating film, SiO2, SiN
Although x and SiOxNy are considered, a laminated structure of these may be used. As the passivation film or the interlayer insulating film, an inorganic insulating film such as a SiO2 film or a SiNx film can be used, but a laminated structure of these may be used. Also, T
As the FT, not only an inverted stagger type etching stopper type but also a back channel cut type can be used. As the Si forming the TFT, polysilicon may be used in addition to amorphous silicon. When polysilicon is used, the peripheral circuit may be formed on the same glass substrate. Even in the case of this structure, the present invention can be used in terms of the structure of the voltage supply terminal applied to the drive circuit.

Further, for example, in the case of reducing the resistance of only the signal line, not only the capacitance line but also the scanning line material is MoW or M.
By using oTa or the like, the voltage output terminal on the signal line side can be formed using the same layer as the scanning line. The same applies when reducing the resistance of only the scanning lines.

Further, the present invention is not limited to the X-ray flat panel detector, but can be applied to a general flat panel detection type solid-state image pickup device using a photoelectric conversion element, and similar effects can be obtained.

[0054]

As described above, according to the present invention, it is possible to provide a terminal structure capable of easily performing repair work with an external circuit device while realizing an improvement in operation speed by reducing the resistance of a wiring pattern and a reduction in image noise. It is possible to provide a flat panel detection type solid-state imaging device having the same.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a schematic configuration of an X-ray flat panel detector, which is an embodiment of a flat panel detection type solid-state imaging device according to the present invention.

FIG. 2 is a pattern wiring diagram and a sectional view showing a schematic configuration of one pixel in a TFT array of the X-ray flat panel detector.

FIG. 3 is a perspective view and a sectional view showing a TAB connection structure of the X-ray flat panel detector.

FIG. 4 is a cross-sectional view showing a structure of a terminal forming portion of the TFT array substrate of the X-ray flat panel detector according to the first embodiment of the present invention.

5A and 5B are a pattern wiring diagram and a cross-sectional view showing a configuration of a terminal forming portion of a TFT array substrate of the X-ray flat panel detector according to a second embodiment of the present invention.

[Explanation of symbols]

100 ... Imaging part mounting substrate, 101 ... a-SiTFT, 1
02 ... X-ray charge conversion film, 103 ... Capacitance element, 104 ... Power supply circuit, 105 ... Scan line, 106 ... Signal line, 107 ... Shift register, 108 ... Amplifier, 201 ... Glass substrate,
202 ... Capacitance line, 203 ... First insulating layer, 204 ... Gate electrode, 205 ... Scan line, 206 ... Second insulating layer, 20
7 ... Pixel electrode, 208 ... Channel formation layer, 209 ... Si
Nx film, 211 ... Source electrode, 212 ... Drain electrode,
213 ... Signal line, 214 ... Passivation film (protective layer), 215 ... ITO film, 216 ... Terminal pattern, 30
1 ... TFT array substrate, 302 ... TCP, 303 ... AC
F.

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] January 27, 2003 (2003.1.2
7)

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Claim 5

[Correction method] Change

[Correction content]

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0048

[Correction method] Change

[Correction content]

[0048] By adopting the above structure, it is possible to use the same MoW the capacitor line 20 2 as terminal base. That is, the terminal pattern 2 serving as the base of the terminal
16 was formed in the same MoW layer capacitor line 20 2, signal lines 213, respectively scanning line 205 extends to the vicinity of the terminal pattern 216, ITO film 215 of the pixel electrode and the same substrate
The terminal pattern 216 made of MoW is electrically connected via. At this time, the IT of the same base material as the pixel electrode is also used in the terminal area.
The O film 215 is stacked. Thereby, the easiness of repair can be made equal to the conventional one while increasing the terminal strength.

[Procedure 3]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 1

[Correction method] Change

[Correction content]

[Figure 1]

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Claims (15)

[Claims] 1. A planar substrate; a plurality of conversion pixels formed on the planar substrate for converting incident light or incident radiation into electric charges and storing the electric charges; and a first control circuit for supplying control signals to the conversion pixels. An array structure including a wiring pattern group and a second wiring pattern group for transmitting charges read out from the conversion pixel; one of the first and second wiring pattern groups formed on the flat substrate TAB (Tape Automated Bonding) connected to the end of the wiring pattern
A terminal structure having a terminal pattern for connection;
The terminal pattern is made of TAB from the material of the wiring pattern.
A flat-panel detection type solid-state imaging device, characterized in that a first material having a high degree of coupling with is used, and a second material having a resistance lower than that of the first material is used for the wiring pattern. 2. The array structure further comprises the first structure.
2. The flat panel detection type solid-state imaging device according to claim 1, further comprising a third wiring pattern group which is formed of the above material and supplies a bias voltage to the conversion pixel. 3. The conversion pixel comprises a capacitive element for accumulating the electric charge of the first material, and the terminal pattern is formed in the same layer as the capacitive element. 1. The flat panel detection type solid-state imaging device according to 1. 4. The flat panel detection type solid-state imaging device according to claim 1, wherein the first material is a molybdenum alloy. 5. The molybdenum alloy is molybdenum tungsten (MoW) or molybdenum tal (MoTa).
4. The flat panel detection type solid-state imaging device according to claim 3, wherein 6. The flat panel detection type solid-state imaging device according to claim 1, wherein the second material is aluminum or an aluminum alloy. 7. The flat panel detection type solid-state imaging device according to claim 1, further comprising a protective layer formed on the terminal pattern and formed of indium tin oxide (ITO). 8. A planar substrate; a plurality of conversion pixels formed on the planar substrate for converting incident light or incident radiation into electric charges and storing the electric charges; and a first control circuit for supplying a control signal to the conversion pixels. An array structure including a wiring pattern group and a second wiring pattern group for transmitting charges read out from the conversion pixel; one of the first and second wiring pattern groups formed on the flat substrate TAB (Tape Autom) formed near the end of the wiring pattern
a terminal structure provided with a terminal pattern for connection, which is formed on the planar substrate and is laminated so as to partially overlap the ends of the terminal pattern and the end of the wiring pattern. And a connection structure having a conductive pattern for electrically connecting; a first material having a higher degree of coupling with TAB than a material of the wiring pattern is used for the terminal pattern, and the first pattern is used for the wiring pattern.
2. A flat-panel detection type solid-state imaging device, characterized by using a second material having a lower resistance than the above material. 9. The flat panel detection type structure according to claim 8, wherein the array structure includes a third wiring pattern group formed of the first material and supplying a bias voltage to the conversion pixels. Solid-state imaging device. 10. The conversion pixel comprises a capacitive element for accumulating the electric charge of the first material, and the terminal pattern is formed in the same layer as the capacitive element. 8. The flat panel detection type solid-state imaging device according to item 8. 11. The flat panel detection type solid-state imaging device according to claim 8, wherein the first material is a molybdenum alloy. 12. The molybdenum alloy is molybdenum tungsten (MoW) or molybdenum tal (MoT).
12. The plane detection type solid-state imaging device according to claim 11, wherein the solid-state imaging device is a). 13. The flat panel detection type solid-state imaging device according to claim 8, wherein the second material is aluminum or an aluminum alloy. 14. The flat panel detection type solid-state imaging device according to claim 8, further comprising a protective layer formed on the terminal pattern and formed of indium tin oxide (ITO). 15. The flat panel detection type solid-state imaging device according to claim 14, wherein the conductive pattern is made of the same material as the protective layer.