JP2003295477A - Resist stripping composition for compound semiconductor - Google Patents

Abstract

(57) Abstract: A resist applied on a GaAs, GaN, or InP compound semiconductor, or a resist residue remaining after dry etching of a resist applied on a compound semiconductor, or ashing after dry etching. A resist stripper composition that can easily strip remaining resist residues or depots at low temperature and in a short time, has very little corrosion of the compound semiconductor, and does not excessively etch the compound semiconductor, a stripping method using the resist stripping composition, and Provided is a method for manufacturing a compound semiconductor integrated circuit. A resist stripper composition for a compound semiconductor, comprising 1 to 50% by weight of an amine, 1 to 17% by weight of water, and 33 to 98% by weight of an organic solvent, the method comprising the steps of: A resist stripping method using a resist stripping composition, a method of manufacturing a compound semiconductor integrated circuit having a step of stripping a resist using the resist stripping composition, and a step of stripping a resist using the resist stripping method A method for manufacturing a compound semiconductor integrated circuit.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping agent composition for stripping a photoresist in a manufacturing process of a compound semiconductor integrated circuit, a resist stripping method and a manufacturing method of a compound semiconductor integrated circuit.

[0002]

2. Description of the Related Art Compound semiconductor integrated circuits are composed of GaAs, G
After a photoresist is applied on a compound semiconductor such as aN or InP, a pattern is formed by exposure and development, and then the compound semiconductor in the non-mask region is etched using the photoresist pattern as a mask to form a fine circuit. The photoresist is peeled off from the compound semiconductor, or after a fine circuit is formed in the same manner, ashing is performed, and the remaining resist residue is peeled off from the compound semiconductor.

As a stripping agent used for manufacturing such a compound semiconductor circuit, an acidic stripping agent, an organic solvent such as acetone or N-methylpyrrolidone, and an alkaline stripping agent composition are known.

However, the acidic stripping agent containing alkylbenzene sulfonic acid as a main component has a weak stripping force. Further, since these acidic stripping agents have high lipophilicity, it is necessary to repeatedly rinse with an organic solvent such as acetone or methanol after stripping the photoresist, which causes a problem that the process becomes complicated. .

Acetone has a low resist peeling property,
Especially when it is used for resist stripping in the lift-off process, so-called burrs or deposits in which resist and metal are mixed cannot be stripped. In addition, the flash point of acetone is as low as -20 ° C and there is a problem in safety.

[0006] N-methylpyrrolidone is known as a stripping agent that can omit the ashing step because it is excellent in stripping the resist alone, but the stripping property of burrs or depots is not sufficient.

As the alkaline stripping agent composition, 5 to 50% by weight of alkanolamines, alkoxyalkylamines or alkoxyalkanolamines, 1 to 30% by weight of acid amide (N-methylpyrrolidone, DMAc), sugar or 0.5 to 15% by weight of sugar alcohols
5 to 50% by weight of a photoresist stripper composition containing the balance of water (JP-A-8-202051), alkanolamines, alkoxyalkylamines or alkoxyalkanolamines, and 1 to 1 of glycol monoalkyl ether. There is known a photoresist stripper composition containing 30% by weight, 0.5 to 15% by weight of sugars or sugar alcohols, and the balance being water (JP-A-8-190205). These are stripper compositions having a small amount of organic solvent and a large amount of water, and have low photoresist solubility.

There is also known a resist stripper composition comprising a quaternary ammonium hydroxide, a water-soluble amine and an alkylpyrrolidone (Japanese Patent Laid-Open No. 11-84686). If an oxide is included, the electrical conductivity of the resist stripper composition is increased and it accelerates the etching of compound semiconductors such as GaAs and InP, so that it is not practical. Further, the formula (I):

[0009]

[Chemical 1]

(Wherein R ¹ represents hydrogen, an alkyl group having 1 to 8 carbon atoms or an alkylene group, provided that R ¹ may be the same or different) in one molecule. A resist stripping agent composed of one or more alkanolamines (Japanese Patent Laid-Open No. 2000-250230) is also known, but it has a problem of extremely etching compound semiconductors such as GaAs.

[0011]

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the conventional resist stripper composition as described above, that is, GaAs, GaN or In.
The resist applied on the compound semiconductor of P, or the resist residue remaining after dry etching the resist applied on the compound semiconductor, or the resist residue or depot remaining after ashing after dry etching can be easily formed at low temperature and in a short time. To provide a resist stripping agent composition that can be stripped off, has extremely little corrosion of a compound semiconductor, and does not excessively etch a compound semiconductor, a stripping method using the resist stripping agent composition, and a method for manufacturing a compound semiconductor integrated circuit. .

[0012]

The summary of the present invention is as follows.
[1] A resist stripper composition for a compound semiconductor, which contains 1 to 50% by weight of amine, 1 to 17% by weight of water, and 33 to 98% by weight of an organic solvent, and [2] in a manufacturing process of a compound semiconductor integrated circuit. A resist stripping method using the resist stripping agent composition described in [1] above, [3] above [1]
[4] A method for producing a compound semiconductor integrated circuit, comprising a step of performing a resist stripping treatment using the resist stripping agent composition of [4].
The present invention relates to a method for manufacturing a compound semiconductor integrated circuit, which comprises a step of performing a resist stripping process using the resist stripping method described in [2] above.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a compound semiconductor means a compound composed of two or more kinds of elements, and specific examples thereof include GaAs, GaP, GaN and In.
P, InSb, etc. binary system; AlGaAs, etc. ternary system; A
A quaternary system such as 1GaInAs may be mentioned.

The amine used in the present invention is an aliphatic amine or an aromatic amine, and the amine preferably has 1 to 4 nitrogen atoms in the molecule. Examples thereof include aliphatic amines having one nitrogen atom, such as monoalkylamines having 1 to 20 carbon atoms, dialkylamines having 2 to 22 carbon atoms, and trialkylamines having 3 to 24 carbon atoms, and further benzylamine and diamine. Aromatic amines having one nitrogen atom such as benzylamine, tribenzylamine, 1-aminonaphthalene, alkylbenzylamine; ethylenediamine, triethylenediamine, 1,3-diaminopropane, 1,6-diaminohexane, 1,3- Diaminoxylene, 1,3-bisaminocyclohexane,
2 nitrogen atoms such as tetramethylhexamethylenediamine
An aliphatic amine having 3 nitrogen atoms such as diethylenetriamine; an aliphatic amine having 4 nitrogen atoms such as triethylenetetramine; an amine compound having 1 to 4 nitrogen atoms in these molecules Compounds having an alkylene oxide having 2 to 4 carbon atoms; monoethanolamine, monopropanolamine, monoisopropanolamine, diethanolamine, methylmonoethanolamine, butylmonoethanolamine, triethanolamine, dimethylmonoethanolamine, methyldiethanolamine, 2 Alkanolamines such as -amino-1-propanol and 1-amino-2-propanol; such as 2-methoxyethylamine, 2-ethoxyethylamine, 3-methoxypropylamine and 3-ethoxypropylamine Turkey alkoxyalkyl amine; 2- (2
Examples thereof include alkoxyalkanolamines such as -aminoethoxy) ethanol and 2- (2-aminoethoxy) propanol. Among these, from the viewpoint of obtaining excellent resist strippability, amine compounds having 1 to 2 nitrogen atoms in the molecule and compounds obtained by adding alkylene oxide having 2 to 3 carbon atoms to them are more preferable, and specifically Is
Benzylamine, 1,3-diaminopropane, diethylenetriamine, monoethanolamine, monopropanolamine, monoisopropanolamine, methylmonoethanolamine, methyldiethanolamine, 1,3-
Examples include diaminoxylene, ethylenediamine and compounds obtained by adding 1 to 4 mol of alkylene oxide to these compounds. The content of these amines is 1 to 50% by weight in the resist stripper composition, preferably 1 to 4
It is 0% by weight, more preferably 1 to 20% by weight. When the content of the amine is lower than 1% by weight, the depot peelability is poor, and when it is higher than 50% by weight, the etching of the compound semiconductor cannot be prevented.

In the amine used in the present invention, the alkanolamine having a structure represented by the following formula (I) is Ga
It is not preferable because it has a property of etching a compound semiconductor such as As extremely.

[0016]

[Chemical 2]

(In the formula, R ¹ represents hydrogen, an alkyl group having 1 to 8 carbon atoms or an alkylene group, provided that R ¹ may be the same or different.)

Examples of the organic solvent used in the present invention include glycol ethers, alcohols, ethers, carbonyls, phenols, nitrogen-containing compounds and sulfur-containing compounds.

As glycol ethers, the following formula (I
I) can be mentioned. R ² [(X) (AO) _s R ³ ] _t (II) (In the formula, R ² is a hydrogen atom or a hydrocarbon having 1 to 8 carbon atoms,
Preferably a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, X
Is -O-, -COO-, -NH-, or -N ((AO)
_u H) -group, s and u are integers of 1 to 20, A is a carbon number 2
Or an alkylene group having ³ carbon atoms, R ³ is a hydrogen atom or a hydrocarbon having 1 to 8 carbon atoms, preferably a hydrogen atom or 1 carbon atom.
~ 4 hydrocarbons, more preferably hydrogen atoms or carbon atoms 1
Alternatively, when two or more R ^{3 s} are present and the hydrocarbon groups of 2 are shown, they are not necessarily the same. t represents 1 to 8, preferably 1 to 3, and more preferably 1 or 2. )

Specific examples of the glycol ether represented by the formula (II) include methyl ether, ethyl ether, propyl ether, butyl ether, hexyl ether, phenyl ether, benzyl ether, dimethyl ether, diethyl ether and butyl methyl of ethylene glycol. Ether, ethyl propyl ether, butyl ethyl ether, dipropyl ether, dibutyl ether;
Diethylene glycol alkyl ethers, triethylene glycol alkyl ethers corresponding to them; methyl ether, ethyl ether, propyl ether, butyl ether, hexyl ether, phenyl ether, benzyl ether, dimethyl ether, diethyl ether; tetraethylene glycol corresponding pentaethylene glycol; Examples thereof include alkyl ether, hexaethylene glycol alkyl ether, propylene glycol alkyl ether, dipropylene glycol alkyl ether, tripropylene glycol alkyl ether and the like.

Alcohols include compounds represented by the formula (III): R ^2- (OH) _t (III) (wherein R ² and t are the same as defined in the above formula (II)). Can be mentioned.

Examples of the ethers include compounds represented by the formula (IV): R ² —O—R ² (IV) (wherein R ² is the same as the definition of the formula (II)).

The carbonyls are represented by the formula (V):

[0024]

[Chemical 3]

(Wherein R ² is the same as the definition of the above formula (II)).

The phenols have the formula (VI):

[0027]

[Chemical 4]

(In the formula, R ⁴ represents a saturated or unsaturated hydrocarbon group having a linear, branched or cyclic skeleton having 1 to 9 carbon atoms, and the hydrocarbon group of R ⁴ has 1 to 5 carbon atoms. May have an oxygen, nitrogen or sulfur atom, and the hydrogen atom bonded to the carbon atom of R ⁴ is —OH group, —NH ₂ group, —S
It may be substituted with H group or a -NO ₂ group. x is 0
5 and y show the integer of 1-3. ) Refers to a compound represented by.

Examples of the above alcohols are methanol, ethanol, propanol, butanol, and pentanol; examples of the ethers are trioxane and methylal; examples of the carbonyls are acrolein, methyl ethyl ketone; examples of the phenols. as,
Examples include phenol and benzylphenol.

The nitrogen-containing compound is not particularly limited as long as it is a compound containing a nitrogen atom having a molecular weight of 200 or less.
For example, formamide, N-methylformamide, N-
Ethylformamide, N, N-dimethylformamide,
N, N-diethylformamide, acetamide, N-methylacetamide, N-ethylacetamide, N, N-
Amides such as dimethylacetamide, N, N-diethylacetamide; N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N
-Pyrrolidone such as butyl-2-pyrrolidone; dimethylimidazolidinone and the like.

The sulfur-containing compound is not particularly limited as long as it is a compound containing a sulfur atom having a molecular weight of 200 or less, and examples thereof include dimethyl sulfoxide and sulfolane.

Among these, as the organic solvent, alcohols such as methanol and ethanol; nitrogen-containing compounds N, N-dimethylformamide, N, N-dimethylacetamide, and N-methyl-are used as the organic solvent. 2-Pyrrolidone, dimethylimidazolidinone; sulfur-containing compounds such as dimethyl sulfoxide and sulfolane are preferable. The content of these organic solvents is 33 to 98% by weight in the resist stripper composition, and preferably 45 to 9%.
It is 4% by weight, more preferably 70 to 94% by weight. When the content of the organic solvent is less than 33% by weight, the resist strippability decreases, and when it exceeds 98% by weight, the amine and water contents decrease and the depot strippability decreases.

The water is preferably ion-exchanged water, ultrapure water or the like in which ionic substances are suppressed. The content of water is 1 to 17% by weight in the resist stripper composition, preferably 3 to 15%.
%, More preferably 4 to 10% by weight. When the water content is less than 1% by weight, the releasability of the resist cured by etching and the depot releasability in the lift-off process are lowered, and when it exceeds 17% by weight, the amine is dissociated and the compound semiconductor is removed. Excessively accelerates the etching.

In order for the resist stripper composition of the present invention to satisfy all the performances such as resist strippability, resist strippability during electrode lift-off and depot strippability, and etching resistance of compound semiconductors, amine, water and organic compounds are required. The composition ratio of the solvent is important, and the composition ratio is 1 to 50% by weight of amine, 1 to 17% by weight of water, and 33 to 98% by weight of organic solvent, preferably 1 to 40% by weight of amine and 3 to 15% by weight of water. % And organic solvent 45
˜96 wt%, more preferably 1 to 20 wt% amine, 4 to 10 wt% water and 70 to 95 wt% organic solvent.

In particular, the resist stripper composition of the present invention is characterized in that the content of the organic solvent is high. There are two reasons why the organic solvent is contained in a large amount. One is that when the content of the organic solvent is increased, the resist peeling property is improved. Secondly, in the three-component system of amine, water and organic solvent as in the present invention, the content of amine and water influences the etching of the compound semiconductor, and by reducing them, the etching damage of the compound semiconductor crystal is reduced. Because you can do it.

A surfactant may be added to the resist stripper composition of the present invention. As the surfactant, any one of a nonionic surfactant, an anionic surfactant, a cationic surfactant and an amphoteric surfactant may be used alone, or two or more kinds may be mixed and used. good. The surfactant has the advantage of lowering the surface tension of the resist stripping composition and improving the wettability with respect to the resist and the deposit.

An additive such as a chelating agent may be added to the resist remover composition of the present invention within a range not deteriorating the properties such as resist peelability and prevention of etching of semiconductor materials. However, a quaternary ammonium hydroxide such as tetramethylammonium hydroxide corrodes the compound semiconductor significantly, so it is preferable not to add it in the present invention.

The resist stripper composition of the present invention having the above composition remains after the resist applied on the compound semiconductor of GaAs, GaN or InP or the resist applied on the compound semiconductor is dry-etched. It has excellent characteristics that the resist residue which is used, or the resist residue or the deposit which remains after ashing after dry etching can be easily peeled off at low temperature and in a short time, and the compound semiconductor is hardly corroded, that is, etched.

Further, the resist stripping method of the present invention uses the resist stripping agent composition in the manufacturing process of a compound semiconductor integrated circuit. Above all, from the viewpoint of preventing etching of the compound semiconductor, the resist stripping treatment is carried out. Is preferably performed in a dark room.

By adopting such a method, it is possible to prevent etching of the compound semiconductor at the time of removing the resist, and it is possible to manufacture the compound semiconductor integrated circuit such as GaAs in a good state. This is because in the compound semiconductor integrated circuit manufacturing, even in the resist stripping step, electromotive force is generated at the semiconductor interface by light irradiation to cause corrosion, that is, etching proceeds, and a phenomenon of photoelectric effect or photovoltaic effect occurs. It is presumed that the etching of the compound semiconductor can be prevented by preventing the occurrence of such a phenomenon.
A dark room means that the internal illuminance when measured with an illuminometer (TOPCON IM-2D, TOKYO OPTICAL CO., LTD.) By covering it with a light-shielding sheet is at least 200 lux or less, preferably 100 lux or less, more preferably Means a sealing mechanism of 50 lux or less or a sealing mechanism for eliminating exposure of the semiconductor material to light having an energy of band gap energy (Eg) or more of the compound semiconductor material.

Eg is the amount of energy required to excite one electron from the valence band (highest occupied band of electrons) to the conduction band (lowest occupied band of electrons). It is known that these semiconductor materials are photoconductive, in which light irradiation excites electrons into the conduction band to give sufficient energy to increase the conductivity of the semiconductor. Light energy is inversely proportional to wavelength, and Eg = hc / λ [where h is Planck's constant (4.1
4 × 10 ⁻¹⁵ eV · s), c is the speed of light (3.0 × 10
⁸ m / s), λ is the wavelength (m)). For example, the compound semiconductor GaAs has a room temperature of 3
Eg = 1.43 eV at 00 K (Source: Optical Property Handbook, Asakura Shoten). That is, photoconduction is achieved when exposed to light energy at wavelengths above 1.43 eV, ie below about 0.9 μm. Therefore, it is when light having a wavelength of about 0.9 μm or less is excluded that it interferes with photoconduction and prevents corrosion or etching of GaAs. Therefore, a dark room when using a GaAs compound semiconductor means a state in which light having a wavelength of about 0.9 μm or less is excluded. Similarly, in the case of compound semiconductor InP, Eg
= 1.34 eV, so about 0.9 μm or less, and in the case of compound semiconductor GaN, Eg = 3.39 eV, so about 0.4 μm
A dark room is a state in which light having the following wavelengths is excluded. In practice, a device such as a lid may be added to prevent the light from entering the peeling tank.

Here, the resist stripping treatment is carried out by dipping the resist and the resist residue on the semiconductor substrate using a submerged shower and an air shower, followed by rinsing with isopropyl alcohol (IPA) or water and drying. A process.

It should be noted that the etching amount of the compound semiconductor simple substance is allowed within 1 nm in one peeling process. The reason for this is that if a peeling process is performed after the recess (recess) having a thickness of 10 nm is manufactured, and if the size of the recess can be changed by ± 10%, the etching amount of 1 nm becomes a permissible range by one peeling step. .

In the resist stripping process, when an electrode is directly formed on a compound semiconductor without sandwiching an insulator, that is, a compound semiconductor (base metal) and an electrode (noble metal) such as different metals having different electrode potentials are brought into contact with each other. In that case, a battery effect in which the compound semiconductor (base metal) is corroded (or galvanic corrosion or contact with dissimilar metals) appears. It is presumed that this phenomenon occurs due to the dissociation of amine as an ionic substance into water in the release agent system to form an electrolyte, or the synergistic effect of amine and water. Here, the etching amount of the compound semiconductor in the electrode portion is set to be within 10 nm in one peeling process.

The resist stripper composition can be easily removed from the compound semiconductor integrated circuit by performing a resist stripping treatment as described above and then washing it by a generally known method.

In the present invention, by performing resist stripping treatment using the resist stripping agent composition or using the resist stripping method, there is no resist residue and the compound semiconductor is very little etched and the compound semiconductor is of good quality. An integrated circuit can be manufactured efficiently.

[0047]

[Examples] Examples 1 to 8 and Comparative Examples 1 to 7 Resist stripping compositions having the compositions shown in Tables 2 and 3 (hereinafter,
Stripping solution) and stripping and rinsing are performed under the stripping method and conditions shown in Table 1 below to remove the resist, the stripping property of the resist and the deposit at the electrode lift-off, the etching amount of the compound semiconductor simple substance (GaAs, InP), and The etching amount of GaAs due to the cell effect in a room or a dark room was evaluated by the methods described below. The results are shown in Tables 2 and 3.

[0048]

[Table 1]

1. Resist strippable compound semiconductor InP having an insulating film of Si ₃ N ₄ with a height of 90 nm and a width of 10 μm is formed every 350 μm in a stripe shape, and then a resist (AZ-4620, manufactured by Clariant Co., Ltd.) is formed on the entire surface.
Was applied in a thickness of 3 μm. Then, it was treated with CF ₄ gas as a reactive ion etching gas, and then stripping and rinsing treatments were performed under the operating method and conditions shown in Table 1. In Examples 1 to 8 and Comparative Examples 2 to 7, the stripper solutions shown in Tables 2 and 3 were used for immersion cleaning at 30 ° C. for 5 minutes, and then IPA rinse was repeated twice, followed by water rinse. The compound semiconductor InP was dried by nitrogen gas blow (N ₂ blow).

In Comparative Example 1, the stripping solutions shown in Table 3 were used for immersion cleaning at 60 ° C. for 5 minutes, IPA rinsing was repeated twice, and then water rinsing was performed, followed by nitrogen gas blow (N ₂ blow). The compound semiconductor InP was dried.

The surface of the obtained compound semiconductor InP was observed with a field emission scanning electron microscope at a magnification of 5,000 times, and the resist was stripped from the presence or absence of a resist residue on the insulating film Si ₃ N ₄ and the compound semiconductor InP. The sex was evaluated based on the following evaluation criteria. Evaluation Criteria: No resist residue. Δ: Most of the resist was peeled off, but there were spots. X: There is resist residue.

2. Electrode lift-off was performed to form a pattern (electrode) of a Pt / Ti metal film on the resist and the deposable GaAs compound semiconductor during electrode lift-off. Specifically, after forming a reverse pattern of a target pattern with a resist film in which a resist 1 and a resist 2 are laminated in order from the bottom on a GaAs compound semiconductor, Pt / Ti is vapor-deposited on the pattern and peeled. The resist film and Pt / Ti on the resist film were peeled off using a liquid.

For the peeling, each peeling solution shown in Tables 2 and 3 was used at each peeling temperature for 5 minutes of ultrasonic wave, 5 minutes of ultrasonic wave, 5 minutes of ultrasonic wave, and 5 minutes of ultrasonic wave. The rinsing and the observation of the compound semiconductor surface were performed in the same manner as in the above "1. Resist peeling property". Evaluation of the resist and deposit removability at the time of electrode lift-off was performed based on the following criteria. Evaluation criteria ◎: Very clean ○: Clean △: Depot residue present ×: Resist residue and depot residue present

3. Method of etching compound semiconductor simple substance; as sample, stripe height 90 nm, width 10 every 350 μm on compound semiconductor GaAs or InP
An insulating film Si ₃ N ₄ having a thickness of μm was formed. Using this, the following 1
The etching amount of the compound semiconductor single body was obtained by the procedure of ~ 4.

1: Initial step 1 in compound semiconductor GaAs or InP (Si ₃ N ₄ on GaAs or InP)
Thickness: Measured at two points in the approximate center of the stripe, and take the average value) with an atomic force microscope (AFM) [[Auto P
robe M5 "(manufactured by Nippon Biko Co., Ltd.)]. 2: Next, the compound semiconductor is immersed in the stripping solution shown in Tables 2 and 3 at each stripping temperature for 30 minutes. 3: After that, step 2 (step from the upper surface of Si ₃ N ₄ to the exposed upper surface of GaAs or InP: measured at the same two locations as measured in step 1, and take the average value)
To measure. 4: etching amount = step 2-step 1

4. Etching amount of GaAs due to cell effect (bright room) Method: 50 μm on compound semiconductor GaAs as sample
Pt / Ti with a width of 290 μm (height: 200 nm /
100 nm, where Pt is an upper layer and Ti is a lower layer). Using this, the etching amount was obtained by the following procedures 1 and 2. This experiment was conducted under a fluorescent lamp.

1: Immerse in each stripping solution at each stripping temperature for 30 minutes. 2: Pt / Ti by field emission scanning electron microscope (70,000 times)
The cross section is observed, the step difference from the lower surface of Ti to the exposed upper surface of GaAs is measured at two locations, and the average value is calculated.
The etching amount was s.

5. Etching amount of GaAs due to cell effect (dark room) The same experiment as "4. Etching amount of GaAs due to cell effect (bright room)" was conducted in a dark room (partitioned by a black curtain and the illumination was shut out).

[0059]

[Table 2]

[0060]

[Table 3]

From the results shown in Tables 2 and 3, all of Examples 1 to 8 had good resist strippability. On the other hand, Comparative Example 4 to
In No. 6, some stains remained, and in Comparative Example 1, resist remained.

Regarding the resist and deposit removability during electrode lift-off, Examples 1 and 4 were particularly clean, and Examples 2 and 3,
5-8 were clean. On the other hand, Comparative Examples 2 and 3 had a depot remaining, and Comparative Examples 1 and 5 had a small amount of resist residue and also a depot.

Regarding the evaluation of the etching amount of the single compound semiconductor, the allowable etching amount of the single compound semiconductor is 1 nm or less in one peeling treatment, but in this test, the dipping time is set to make it easier to see the step. The evaluation was intentionally extended for 30 minutes. Therefore, in this test, the allowable amount is 1 nm × (30 minutes / 5 minutes) = 6 nm. as a result,
All of Examples 1 to 8 were within the permissible range for both GaAs and InP. On the other hand, with respect to GaAs, Comparative Examples 4, 6, and 7 had large etching amounts of 17 nm, 25 nm, and 20 nm, respectively, and with respect to InP, Comparative Example 6 was outside the allowable range.

Regarding the result of the etching amount of GaAs due to the cell effect, the allowable amount of etching of the compound semiconductor in the electrode portion is within 10 nm in one peeling process.
Here, since the peeling time is 5 minutes, 60 nm is an allowable amount after 30 minutes. In the bright room, all of Examples 1 to 8 were within the allowable range. In addition, as in Example 1 → Example 2 or 3, Example 4 → Example 5 → Example 6 or 7,
It was found that the etching amount decreased as the amount of water in the stripper decreased. Further, Comparative Examples 4, 6, and 7 were 150 nm, 230 nm, and 180 nm, respectively, which greatly exceeded the allowable range. On the other hand, it was found that the amount of etching was about 1/2 or less in any of the examples in the dark room as compared with the experiment performed in the bright room. Therefore, the effect of preventing the etching due to the photoelectric effect was clear, and all of Examples 1 to 8 were within the allowable range. Further, in Comparative Examples 4, 6 and 7, it was found that the etching amount was reduced by the dark room treatment, but it was still beyond the allowable range.

From the above results, it was Examples 1 to 8 that satisfied all the performances from the resist peelability to the etching, and any of the performances was lacking in Comparative Examples 1 to 7.

[0066]

According to the present invention, GaAs, GaN or I
The resist applied on the nP compound semiconductor, or the resist residue remaining after dry etching the resist applied on the compound semiconductor, or the resist residue or depot remaining after ashing after dry etching, can be easily removed at low temperature and in a short time. Since the compound semiconductor integrated circuit can be peeled off, corrosion of the compound semiconductor is extremely small, and a compound semiconductor integrated circuit in which the compound semiconductor is not excessively etched can be manufactured.

Claims (7)

[Claims] 1. A resist stripper composition for a compound semiconductor, comprising 1 to 50% by weight of amine, 1 to 17% by weight of water, and 33 to 98% by weight of an organic solvent. 2. The resist stripper composition according to claim 1, wherein the amine is an amine having 1 to 4 nitrogen atoms in the molecule. 3. The organic solvent is one or more selected from the group consisting of glycol ethers, alcohols, ethers, carbonyls, phenols, nitrogen-containing compounds and sulfur-containing compounds. Resist stripping composition. 4. A resist stripping method which uses the resist stripping agent composition according to claim 1 in a process for producing a compound semiconductor integrated circuit. 5. The resist stripping process is performed in a dark room.
The resist stripping method as described. 6. A method of manufacturing a compound semiconductor integrated circuit, comprising a step of removing a resist using the resist remover composition according to any one of claims 1 to 3. 7. A method of manufacturing a compound semiconductor integrated circuit, comprising a step of performing a resist stripping process using the resist stripping method according to claim 4.