JP2003282886A - Electronic device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent an effect caused from occurrence of whiskers and hillocks in a device using aluminum as wiring. <P>SOLUTION: The semiconductor device includes a silicon film, a gate insulating film contacted with the silicon film, a gate electrode contacted with the gate insulating film, a source electrode and a drain electrode which are contacted with the silicon film. The gate electrode consists of a film where an aluminum film or aluminum is a main component, the concentration of oxygen in the gage electrode is less than 8×10<SP>18</SP>atom cm<SP>-3</SP>, the concentration of carbon is less than 5×10<SP>18</SP>atom cm<SP>-3</SP>, and the concentration of nitrgen is less than 7×10<SP>17</SP>atom cm<SP>-3</SP>. Each of the source electrode and the drain electrode consist of a laminated film is which a titanium film, an aluminum where the concentration of oxygen is less than 8×10<SP>18</SP>atom cm<SP>-3</SP>, the concentration of carbon is less than 5×10<SP>18</SP>atom cm<SP>-3</SP>, and the concentration of nitrogen is less than 7×10<SP>17</SP>atom cm<SP>-3</SP>, and a titanium film are laminated in the above order. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The invention disclosed in this specification includes:
The present invention relates to a semiconductor device in which electrodes and wirings are made of aluminum or a material containing aluminum as a main component. Furthermore, the present invention relates to a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, an active matrix type liquid crystal display device having a large-area screen has attracted attention. This active matrix type liquid crystal display device is required to have a large area and a fine structure.

In order to satisfy such requirements,
It is necessary to utilize low resistance wiring materials. This is because when the size is 10 inches square or more, the delay of the signal propagating through the wiring becomes a problem.

Aluminum is the most preferable material for the low-resistance wiring material. However, when aluminum is used, there is a problem in heat resistance in the manufacturing process. (In this regard, Display and Imaging
1996 Vol.4, pp 199-206 (published by Science Communications International), refer to the commentary paper)

Specifically, in the process of forming a thin film transistor, the formation and annealing of various thin films, the irradiation of laser light and the process of implanting impurity ions, abnormal growth of aluminum occurs, and protrusions called hillocks and whiskers are formed. There is a problem. The hillocks and whiskers are considered to be due to the low heat resistance of aluminum.

The growth distance of the projections called hillocks or whiskers may reach 1 μm or more. Such a phenomenon causes a short circuit between wirings.

In order to prevent this problem, there is a technique of forming an anodic oxide film on the surface of the wiring made of aluminum.
(See the commentary article above)

[0008]

According to the study by the present applicants, the film quality of the anodic oxide film (which is considered to contain Al2 O3 as a main component) is strong, and it is necessary to prevent the formation of hillocks and whiskers. Is effective, but on the other hand, it has been found that it is difficult to form a contact hole for a wiring made of aluminum because of its rigidity.

The invention disclosed in this specification solves the problem of heat resistance of the wiring made of aluminum, and
Another object of the present invention is to provide a technique capable of solving the problem that it is difficult to form a contact which is a problem when an anodic oxide film is formed.

[0010]

One of the inventions disclosed in this specification is to have a concentration of oxygen atoms in aluminum or a film containing aluminum as a main component, which has a pattern containing aluminum as a main component. Is 8 ×
10 ¹⁸ cm ^-3 or less and the concentration of carbon atoms is 5 × 1
0 ¹⁸ cm ^-3 or less and the concentration of nitrogen atoms is 7 × 10
It is characterized by being ¹⁷ cm ^-3 or less.

When the above-mentioned structure is adopted, the maximum height of the generated protrusions such as hillocks and whiskers can be set to 500 Å or less.

Another structure of the present invention is a method of manufacturing an electronic device having aluminum or a pattern containing aluminum as a main component, wherein the concentration of oxygen atoms in the film containing aluminum or aluminum as a main component is 8 × 1.
0 ¹⁸ cm ^-3 or less and the concentration of carbon atoms is 5 × 10
¹⁸ cm ^-3 or less and the concentration of nitrogen atoms is 7 × 10 ¹⁷
It is characterized in that the number of pieces is cm ⁻³ or less, and the process temperature applied to the pattern during the manufacturing process is 400 ° C. or less.

By setting the process temperature to 400 ° C. or lower, it is possible to maximize the effect of limiting the concentration of each element of oxygen, carbon and nitrogen.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION As shown in FIG. 1B, when the concentration of oxygen atoms is 8 × 10 ¹⁸ cm ⁻³ or less and the concentration of carbon atoms is 5 × 10 ¹⁸ cm ⁻³ or less. A silicon nitride film 107 is provided on the upper surface of the pattern 106 made of an aluminum film having a nitrogen atom concentration of 7 × 10 ¹⁷ cm ⁻³ or less.
Anodic oxide films (oxide films) 108 and 109 are formed on the side surfaces.
Is provided.

With such a structure, formation of protrusions such as hillocks and whiskers can be suppressed, and contacts can be easily formed.

[0016]

Embodiments [Embodiment 1] FIG. 1 and thereafter show the outline (cross-sectional views) of the manufacturing process of this embodiment. This embodiment shows a manufacturing process of a thin film transistor (generally referred to as a pixel transistor) arranged in a pixel matrix portion in an active matrix liquid crystal display.

First, a glass substrate 101 is prepared as shown in FIG. 1A, and a base film (not shown) is formed on the surface thereof. Here, as a base film not shown, 3000 Å
A thick silicon oxide film is formed by a sputtering method.

This base film has a function of alleviating the effects of diffusion of impurities from the glass substrate and minute irregularities on the surface of the glass substrate. Although an example using a glass substrate is shown here, a quartz substrate can be used instead.

After forming a base film on the glass substrate 101, an amorphous silicon film (not shown) to be a starting film of a semiconductor film (constituting the active layer) forming the active layer 102 of the thin film transistor is next formed. A film is formed to a thickness of 500 Å by the plasma CVD method.

After forming the amorphous silicon film, laser light is irradiated to obtain a crystalline silicon film (not shown). Next, by patterning this crystalline silicon film, an active layer pattern indicated by 102 is formed.

Further, a silicon oxide film 103 functioning as a gate insulating film is formed in a thickness of 1000Å by the plasma CVD method.

After the silicon oxide film 103 is formed, an aluminum film 104 is formed to a thickness of 4000Å by a sputtering method. In this way, the state shown in FIG.

Here, 0.18% by weight of scandium is contained in this aluminum film.

The reason why scandium is contained in the aluminum film is to suppress the generation of hillocks and whiskers in the subsequent steps. Scandium is effective in suppressing the generation of hillocks and whiskers because it has the effect of suppressing abnormal growth of aluminum.

Next, the aluminum film 104 and the silicon nitride film 1
By patterning the laminated film with 05, 106
The aluminum pattern shown by is obtained. Also, 10
7 is a silicon nitride film remaining on the gate electrode 106.

This aluminum pattern 106 serves as a gate electrode. A gate line is arranged so as to extend from the gate electrode 106.

In the pixel matrix portion, the gate lines extending from the gate electrode 106 are arranged in a grid pattern together with the source lines.

Next, anodic oxidation is performed using the gate electrode 106 as an anode to form anodic oxide films 108 and 109 on the side surface where the aluminum material is exposed. The film thickness of these anodic oxide films is 500 Å.

In this anodizing step, an electrolytic solution obtained by neutralizing an ethylene glycol solution containing 3% tartaric acid with aqueous ammonia is used. In this electrolytic solution, platinum as the cathode, aluminum film as the anode,
An anodic oxide film is formed by passing a current between both electrodes.

Anodized film 105 formed in this step
Has a dense and strong film quality. The control of the film thickness in this anodizing step can be performed by the applied voltage.

In the above process, since the electrolytic solution contacts only the side surface of the gate electrode 106, the anodic oxide film is not formed on the upper surface thereof. Thus, the state shown in FIG. 1B is obtained.

Next, the source region 110, the channel region 111, and the drain region 112 are formed by performing P (phosphorus) doping. Here, a plasma doping method is used as the doping means. Thus, FIG.
The state shown in (C) is obtained.

An example in which P is doped in order to manufacture an N-channel type thin film transistor will be described. However, if a P-channel type thin film transistor is manufactured, B is used.
Doping of (boron).

In the doping process, the sample may be heated or inevitably heated. From the viewpoint of the heat resistance of aluminum, it is important to try to keep the sample temperature at 400 ° C. or lower. Sample temperature is 4
If the temperature exceeds 00 ° C, the generation of hillocks (and whiskers (the distinction between the two is not strict)) becomes apparent, so care must be taken.

After the completion of the doping step, laser light irradiation is performed to activate the dopant and the doped region at the same time.

Next, a silicon nitride film 113 is formed as a first interlayer insulating film by plasma CVD to a thickness of 2000 Å. (See Figure 2 (A))

Further, a film 114 made of polyimide is formed as a second interlayer insulating film by spin coating. When polyimide is used as the interlayer insulating film, its surface can be made flat.

Then, contact holes 115 and 116 are formed in the source and drain regions. Thus, the state shown in FIG. 2A is obtained.

Further, a source electrode 117 and a drain electrode 1 are formed by forming a laminated film of a titanium film, an aluminum film and a titanium film by a sputtering method and patterning the film.
18 is formed. Thus, the state shown in FIG. 2B is obtained.

Further, a third interlayer insulating film 119 is formed by using polyimide. Then, a contact hole is formed for the drain electrode 118, and a pixel electrode 120 made of ITO is formed. Thus, the state shown in FIG. 2C is obtained.

Finally, heat treatment in a hydrogen atmosphere is performed to compensate for defects in the active layer, thus completing the thin film transistor.

[Embodiment 2] This embodiment is carried out at the same time as the manufacturing process shown in Embodiment 1, and shows a manufacturing process of a thin film transistor arranged in a peripheral drive circuit formed around the pixel matrix portion. This embodiment also shows a process of manufacturing an N-channel thin film transistor.

The manufacturing process of the thin film transistor shown in this embodiment is the same as that of the first embodiment up to the process shown in FIG. (Of course, there are differences in wiring patterns and active layer patterns.)

First, according to the steps shown in Example 1, FIG.
The state shown in (C) is obtained. Next, as shown in FIG. 3A, a silicon nitride film 113 is formed as a first interlayer insulating film.

Further, a layer 114 made of polyimide is formed as a second interlayer insulating film. Next, contact hole 30
1, 302 and 303 are formed.

At this time, since the anodic oxide film is not formed (the silicon nitride film is formed) on the upper surface of the gate electrode 106, the contact hole indicated by 302 can be easily formed.

In the structure shown in this embodiment, the contact holes 301, 302 and 303 are simultaneously formed by using the dry etching method. Thus, FIG.
The state shown in (A) is obtained.

Next, a three-layer film consisting of a titanium film, an aluminum film and a titanium film is formed by the sputtering method. Further, by patterning this, a source electrode 304, a gate extraction electrode 305, and a drain electrode 306 are formed. Thus, the state shown in FIG. 3B is obtained.

After this, a hydrogenation process is performed as in the case of Example 1 to complete the thin film transistor.

Here, a process of manufacturing an N-channel type thin film transistor is shown. Generally, the peripheral drive circuit
An N-channel thin film transistor and a P-channel thin film transistor are arranged in a complementary manner.

[Embodiment 3] This embodiment shows a manufacturing process of a thin film transistor in which a low concentration impurity region is arranged between a channel region and a drain region.

4 and 5 show the manufacturing process of the thin film transistor of this embodiment. First, a base film (not shown) is formed on the glass substrate 401. Further, an amorphous silicon film is formed and crystallized by irradiation with laser light. Thus, a crystalline silicon film is obtained.

Next, the obtained crystalline silicon film is patterned to form an active layer of a thin film transistor indicated by 402.

Further, a silicon oxide film 403 which functions as a gate insulating film is formed. After forming the silicon oxide film 403, an aluminum film 404 is formed.

Next, a silicon nitride film 405 is formed on the aluminum film.
To form a film. Thus, the state shown in FIG. 4A is obtained.

After obtaining the state shown in FIG. 4A, patterning is performed to obtain an aluminum pattern 406. This aluminum pattern becomes the base pattern of the gate electrode to be formed later.

Here, 407 is the remaining silicon nitride film pattern. Thus, the state shown in FIG. 4B is obtained.

In this state, anodization is performed by using the aluminum pattern 406 as an anode to form the anodized film 40.
9 and 410 are formed.

Here, a 3% oxalic acid aqueous solution is used as the electrolytic solution. The anodic oxide film formed in this step has a porous (porous) shape. This anodic oxide film can have a growth distance of several μm. This growth distance can be controlled by the anodic oxidation time. Thus, the state shown in FIG. 4C is obtained.

In this state, the remaining pattern indicated by 408 becomes a gate electrode.

Next, anodic oxidation is performed again. Here, the anodic oxidation is performed under the conditions for forming the anodic oxide film having the dense film quality shown in the first embodiment. Thus, 4 in FIG.
The anodic oxide film having a dense film quality shown by 11 and 412 is formed.

Here, the film thickness of the anodic oxide films 411 and 412 having this dense film quality is set to 500 Å. The dense anodic oxide film is selectively formed on the side surface of the gate electrode 408. This is the gate electrode 40
This is because the silicon nitride film 407 is present on the upper surface of No. 8. Further, since the electrolytic solution enters the inside of the porous anodic oxide films 409 and 410, the anodic oxide film having a dense film quality is formed in the states shown by 411 and 412. Thus, the state shown in FIG. 5A is obtained.

Next, P doping is performed. Here, P doping is performed by the plasma doping method. By performing this doping, the source region 413, the I-type region 414, and the drain region 415 are formed in a self-aligned manner as shown in FIG.

Next, the porous anodic oxide films 409 and 410 are used.
Are selectively removed. In this step, part of the silicon nitride film 407 existing on the anodic oxide films 409 and 410 to be removed as shown in FIG. 5C is also removed at the same time.

Then, P doping is performed again. In this step, P doping is performed with a lower dose amount than the conditions in the previous doping step. In this step, the low concentration impurity regions 416 and 418 are formed in a self-aligned manner. In addition, the channel formation region 417 is formed in a self-aligned manner.

The low-concentration impurity regions 416 and 418 have a lower concentration of P (phosphorus) element contained therein as compared with the source region 413 and the drain region 415.

The low-concentration impurity region on the drain region side, which is generally indicated by 418, is an LDD (lightly doped drain).
It is called an area.

When the state shown in FIG. 5C is obtained, laser light is irradiated to anneal the doped region.

In the structure shown in this embodiment, the upper surface of the gate electrode (and the gate line extending therefrom) is covered with the silicon nitride film, and the side surface thereof is covered with the anodic oxide film having a dense film quality. ing.

With such a structure, it is possible to prevent hillocks and whiskers from being generated on the surface of the gate electrode in the impurity doping step and the laser beam irradiation step.

Further, it is possible to adopt a structure in which it is easy to form a contact with the gate electrode (or gate line).

[Embodiment 4] This embodiment relates to a thin film transistor having a structure called a bottom gate type in which a gate electrode is between an active layer and a substrate.

6 and 7 show the manufacturing process of this embodiment.
First, an aluminum film 6 is formed on a glass substrate indicated by 601.
02 is deposited to a thickness of 3000 Å by a sputtering method. This aluminum film will later form a gate electrode.

After the aluminum film 602 is formed, a silicon nitride film 603 is formed on the aluminum film 602 by plasma CV to a thickness of 500Å.
The film is formed by the D method. Thus, the state shown in FIG. 6A is obtained.

Then, patterning is performed to obtain the gate electrode 604. Reference numeral 605 denotes the silicon nitride film remaining on the gate electrode 604. Thus, FIG.
The state shown in (B) is obtained.

Next, by performing anodic oxidation using the gate electrode 604 as an anode, an anodic oxide film 606 and 607 having a dense film quality is formed to a thickness of 500 Å.

In this step, the anodic oxide film is formed only on the side surface of the gate electrode 604 due to the existence of the silicon nitride film 605. Thus, the state shown in FIG. 6C is obtained.

Next, a silicon oxide film 608 functioning as a gate insulating film is formed to a thickness of 1000Å by the plasma CVD method. Further, an amorphous silicon film (not shown) for forming the active layer is formed to a thickness of 500 Å by the plasma CVD method. Then, the amorphous silicon film is irradiated with laser light to obtain a crystalline silicon film (not shown).

After obtaining a crystalline silicon film (not shown), patterning is performed to form a crystalline silicon film 609, 610, 611.
An active layer pattern consisting of the area shown by is formed.

Then, exposure is performed from the back surface side of the substrate 601 using the gate electrode 604 as a mask to form a resist mask 612. (See FIG. 6D)

In this state, P doping is performed by the plasma doping method. In this doping process, the source region 609, the drain region 611, and the channel region 610 are formed in a self-aligned manner. Thus, FIG.
The state shown in (D) is obtained.

After the doping process is completed, laser light irradiation is performed to activate the doped element and anneal the doped region.

Next, a silicon nitride film is formed as the first interlayer insulating film 612 by the plasma CVD method to a thickness of 2000 Å, and the second interlayer insulating film 613 is further formed by polyimide. Thus, the state shown in FIG. 7A is obtained.

Next, contact holes are formed to form a source electrode 614 and a drain electrode 615. And finally hydrogenation is performed.

Although not shown, in other parts,
A contact hole is formed above the wiring extending from the gate electrode 604, and a contact to the gate electrode 604 is formed. Thus, the state shown in FIG. 7B is obtained.

Also in the structure shown in this embodiment, since the anodic oxide film is formed on the side surface of the gate electrode 604, generation of hillocks and whiskers is prevented, and the silicon nitride film is formed on the upper surface thereof. This prevents the formation of hillocks and whiskers. Since the silicon nitride film is formed on the upper surface of the gate electrode, the contact hole can be easily formed.

[Embodiment 5] In this embodiment, the relationship between the concentration of impurities and the hillocks generated in the aluminum film containing scandium at 0.18% by weight is shown. Table 1 shows that a 3000 Å thick aluminum film formed by a sputtering method was used in a hydrogen atmosphere at 350 ° C.
This is the relationship between the hillock height and the impurity concentration in the film when the surface of the film is observed after heat treatment for 1 hour.

[0088]

[Table 1]

In Table 1, the difference in the impurity concentration in the film between the samples reflects the differences due to the evacuation time during sputtering, the presence or absence of cleaning of the chamber of the sputtering apparatus, the maintenance of the exhaust pump, and the like. is there.

Here, the height of the hillock is the cross-section SEM.
(Scanning electron microscope) observation, AFM (atomic force microscope)
It was examined by observation. The impurity concentration is S
It is the maximum value examined by IMS (secondary ion analysis method).

As is clear from Table 1, the generation of hillocks can be suppressed by reducing the concentrations of oxygen (O), carbon (C) and nitrogen (N) in the film.

Considering the film thickness of the interlayer insulating film and the like, if the hillock height is 500 Å or less, the existence thereof can be practically allowed.

From Table 1, as a condition for satisfying this value,
Oxygen concentration is 7 × 10 ¹⁸ cm ^-3 or less and carbon concentration is 5
It is concluded that it is sufficient that the nitrogen concentration is not more than × 10 ¹⁸ cm ^-3 and the nitrogen concentration is not more than 7 × 10 ¹⁷ cm ^-3 .

SIMS (secondary ion analysis method)
It is necessary to be careful because a value different from the actual value may be measured near the interface of the film.

[Explanation of Apparatus] An apparatus used for carrying out the invention disclosed in this specification will be described. Figure 8
Shows the outline of the equipment. The apparatus shown in FIG. 8 has a multi-chamber type capable of continuously performing a plurality of treatments without exposing the sample to the atmosphere. Each chamber is equipped with a required exhaust device, and has a structure capable of maintaining airtightness.

In the apparatus shown in FIG. 8, 804 is a substrate loading chamber, and 805 is a substrate unloading chamber. A plurality of substrates (samples) housed in the cassette 815 are loaded into the substrate loading chamber 804 from the outside of the cassette. The processed substrates are stored in the cassette 816, and when a predetermined number of substrates are processed, the substrates are taken out of the cassette 816.

A substrate transfer chamber 801 has a function of transferring the substrate 800 to a required chamber by the robot arm 814.

Reference numeral 803 is a chamber having a sputtering function for forming an aluminum film. A cryopump is arranged in this chamber so that the impurity concentration in the aluminum film to be formed is set to a predetermined value or less.

Reference numeral 802 denotes a sputtering apparatus for forming a germanium film (or tin film) used for realizing good electrical contact when forming a contact. A cryopump is also arranged in this chamber to prevent impurities from entering as much as possible.

Reference numeral 807 is a chamber for performing heat treatment. Here, it has a function of heating by irradiation of a lamp.

Reference numeral 806 is a chamber having a function of performing plasma CVD for forming a silicon nitride film.

810, 809, 808 are provided between the transfer chamber 801 and the peripheral chambers for carrying out each process.
Gate valves (opening / closing partition walls or partitions) denoted by 813, 812, and 811 are arranged.

An operation example for operating the apparatus shown in FIG. 8 is shown below. Here, a step of continuously forming an aluminum film, a germanium film, a heat treatment, and a silicon nitride film is shown.

In the following, all but the gate valve through which the sample passes will be closed. First, a plurality of substrates (samples) on which an aluminum film is to be formed are cassette 81
5 and then loaded into the substrate loading chamber 804. Next, the robot arm 814 is used to transfer one substrate to the chamber 80.
Transport to 3.

After forming the aluminum film in the chamber 803, the substrate is transferred to the chamber 806 and the silicon nitride film is formed. Then, the substrate unloading chamber 80
The substrate is stored in the cassette 816 of No. 5 and the series of steps is completed.

When the aluminum film for contact is formed after the contact hole is formed, the chamber 8 is formed after the aluminum film is formed.
02, a germanium film is formed, and the heating chamber 8
By performing heat treatment at 07, annealing for forming a contact called reflow is performed.

In the reflow, the melting point is lowered at a portion where aluminum and germanium are in contact with each other, and the germanium is diffused in the aluminum film by the heat treatment, so that the electrode is exposed to the aluminum (exposed to the bottom of the contact hole). It has the effect of improving electrical contact.

[Embodiment 6] In this embodiment, as a method for forming a metal oxide film on the surface of aluminum, plasma oxidation is used instead of anodic oxidation. The plasma oxidation can be formed by performing high frequency discharge in an oxidizing reduced pressure atmosphere.

Example 7 The invention disclosed in this specification is
It can be applied to an electro-optical device having an active matrix type structure. Examples of the electro-optical device include a liquid crystal display device, an EL (electroluminescence) display device, and an EC (electrochromic) display device.

Further, the applied products include TV cameras, personal computers, car navigations, TV projections, video cameras and the like. A brief description of those applications will be given with reference to FIG.

FIG. 9A shows a TV camera, which is a main body 20.
01, a camera unit 2002, a display device 2003, and operation switches 2004. The display device 2003 is used as a viewfinder.

FIG. 9B shows a personal computer, which includes a main body 2101, a cover portion 2102, and a keyboard 21.
03 and a display device 2104. Display device 210
4 is used as a monitor and requires a size of 10 inches diagonally.

FIG. 9C shows a car navigation system,
Main body 2201, display device 2202, operation switch 220
3 and an antenna 2204. Display device 2202
Is used as a monitor, but its main purpose is to display a map, so it can be said that the allowable range of resolution is relatively wide.

FIG. 9D shows a TV projection, which includes a main body 2301, a light source 2302, a display device 2303, and
It is composed of mirrors 2304 and 2305 and a screen 2306. Since the image displayed on the display device 2303 is projected on the screen 2306, the display device 2303 is required to have high resolution.

FIG. 9E shows a video camera, which is a main body 2
401, a display device 2402, an eyepiece 2403, operation switches 2404, and a tape holder 2405.
The captured image displayed on the display device 2402 is the eyepiece 24.
Since it can be viewed in real time through 03, the user can shoot while viewing the image.

[0116]

By utilizing the invention disclosed in the present specification, the problem of heat resistance of the wiring made of aluminum can be solved, and the formation of a contact which is a problem when an anodic oxide film is formed can be facilitated. Can be one.

[Brief description of drawings]

1A to 1C are diagrams illustrating a manufacturing process of a thin film transistor.

2A to 2D are diagrams illustrating a manufacturing process of a thin film transistor.

3A to 3D are diagrams illustrating a manufacturing process of a thin film transistor.

4A to 4C are diagrams illustrating a manufacturing process of a thin film transistor.

5A to 5C are diagrams illustrating a manufacturing process of a thin film transistor.

6A to 6C are diagrams illustrating a manufacturing process of a thin film transistor.

7A to 7C are diagrams illustrating a manufacturing process of a thin film transistor.

FIG. 8 is a diagram showing an outline of a film forming apparatus.

FIG. 9 is a diagram showing an outline of an apparatus using a liquid crystal panel.

[Explanation of symbols]

101 glass substrate 102 active layer (crystalline silicon film) 103 gate insulating film (silicon oxide film) 104 aluminum film 105 silicon nitride film 106 gate electrode 107 remaining silicon nitride film 108 anodized film 109 anodized film 110 source region 111 channel Region 112 Drain region 113 First interlayer insulating film (silicon nitride film) 114 Second interlayer insulating film (layer made of polyimide) 115 Contact hole to source region 116 Contact hole to drain region 117 Source electrode 118 Drain electrode 119 Third interlayer insulating film (layer made of polyimide) 120 Pixel electrode (ITO electrode)

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/49 H01L 29/58 G 29/50 MF term (reference) 4M104 AA09 BB02 BB14 DD37 DD39 DD41 DD88 EE05 EE09 EE16 EE17 FF13 GG09 GG10 GG14 HH03 HH15 5F110 AA17 AA26 AA28 BB02 BB04 CC02 CC08 DD02 DD03 DD13 EE03 NN36 NN36 NN23 NN23 HL23 HL24 HL24 HL15 HL13 HIL03 HL15 QQ24

Claims (2)

[Claims] 1. A silicon film, A gate insulating film in contact with the silicon film, A gate electrode in contact with the gate insulating film, A source electrode and a drain electrode connected to the silicon film,
A semiconductor device having: The gate electrode is mainly an aluminum film or aluminum.
Consists of a film as an ingredient, The oxygen concentration in the gate electrode is 8 × 10¹⁸C
m^-3Below, the carbon concentration is 5 × 10¹⁸Cm^-3
Below, the nitrogen concentration is 7 × 10¹⁷Cm^{− Three}Below
Yes, The source electrode and the drain electrode are made of titanium.
Membrane, oxygen concentration is 8 × 10 ¹⁸Cm^-3Is and charcoal
Elementary concentration is 5 × 10¹⁸Cm^-3Below, the nitrogen concentration
Is 7 × 10¹⁷Cm^-3An aluminum film that is,
It is characterized by comprising a laminated film in which a titanium film is laminated in this order.
Semiconductor device. 2. The semiconductor device according to claim 1, wherein a silicon nitride film is provided on the upper surface of the gate electrode.