JP2003264513A - Two-way optical communication system - Google Patents
Two-way optical communication systemInfo
- Publication number
- JP2003264513A JP2003264513A JP2002066272A JP2002066272A JP2003264513A JP 2003264513 A JP2003264513 A JP 2003264513A JP 2002066272 A JP2002066272 A JP 2002066272A JP 2002066272 A JP2002066272 A JP 2002066272A JP 2003264513 A JP2003264513 A JP 2003264513A
- Authority
- JP
- Japan
- Prior art keywords
- optical signal
- optical
- wavelength
- emitting
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 174
- 230000006854 communication Effects 0.000 title claims abstract description 39
- 239000013307 optical fiber Substances 0.000 claims abstract description 45
- 230000002457 bidirectional effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000008054 signal transmission Effects 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、一方の送受信側と
他方の送受信側との間で双方向通信が可能な光通信シス
テムに関し、更に詳細には、単芯の1本の光ファイバを
介して双方向光通信が可能であり、しかも一方の送受信
側及び他方の送受信側に小型の光信号送受信装置を設け
た光通信システムに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical communication system capable of bidirectional communication between one transmission / reception side and the other transmission / reception side, and more particularly, via a single optical fiber. The present invention relates to an optical communication system in which two-way optical communication is possible and a small optical signal transmitting / receiving device is provided on one transmitting / receiving side and the other transmitting / receiving side.
【0002】[0002]
【従来の技術】光通信システムでは、図4に示すよう
に、基本的には、送信側で電気信号により変調された半
導体レーザ素子又は発光ダイオード等の発光素子の出射
光を光信号として光ファイバを介して受信側に送信し、
受信側では伝送された光信号をフォトダイオード(P
D、光検出器)等の受光素子で検出して電気信号として
復調している。そして、一方の側と他方の側との間で双
方向の光信号送受信を行うためには、発光素子を有する
光信号送信装置及びフォトダイオードを有する光信号受
信装置を双方の側にそれぞれ設け、一方の側の光信号送
信装置と他方の側の光信号受信装置とを結び、他方の側
の光信号送信装置と一方の側の光信号受信装置とを結ぶ
2芯の光ファイバを用いて送受信を行っている。2. Description of the Related Art In an optical communication system, as shown in FIG. 4, basically, light emitted from a light emitting element such as a semiconductor laser element or a light emitting diode modulated by an electric signal on the transmitting side is used as an optical signal in an optical fiber. To the receiver via
On the receiving side, the transmitted optical signal is transferred to the photodiode (P
D, a photodetector) and the like to detect and demodulate as an electric signal. Then, in order to perform bidirectional optical signal transmission / reception between one side and the other side, an optical signal transmitting device having a light emitting element and an optical signal receiving device having a photodiode are provided on both sides, respectively. Transmission and reception using a two-core optical fiber that connects the optical signal transmitter on one side and the optical signal receiver on the other side, and connects the optical signal transmitter on the other side and the optical signal receiver on one side It is carried out.
【0003】図5を参照し、一例を挙げて従来の双方向
の光通信システムの構成を具体的に説明する。図5は従
来の双方向の光通信システムの構成を示す模式図であ
る。従来の双方向の光通信システム10は、基本的に
は、図5に示すように、一方の送受信側に設けられた第
1の光信号送受信装置12と、他方の送受信側に設けら
れた第2の光信号送受信装置14と、第1及び第2の光
信号送受信装置12、14を結ぶ2芯一本、又は単芯2
本の第1及び第2の光ファイバ16A、Bとから構成さ
れている。The configuration of a conventional bidirectional optical communication system will be specifically described with reference to FIG. FIG. 5 is a schematic diagram showing a configuration of a conventional bidirectional optical communication system. As shown in FIG. 5, a conventional bidirectional optical communication system 10 basically includes a first optical signal transmitting / receiving apparatus 12 provided on one transmitting / receiving side and a first optical signal transmitting / receiving apparatus 12 provided on the other transmitting / receiving side. Two optical signal transmitting / receiving apparatus 14 and one core or two cores connecting the first and second optical signal transmitting / receiving apparatus 12, 14
It is composed of first and second optical fibers 16A and 16B.
【0004】第1の光信号送受信装置12は、第1の光
ファイバ16Aの一方の端部に光結合され、第1の光フ
ァイバ16Aを介して光信号を送信するGaAs系面発
光型半導体レーザ装置(以下、VCSELと言う)と、
VCSELを駆動する駆動装置(図示せず)とを有する
第1の光信号送信装置18と、第2の光ファイバ16B
の一方の端部に光結合され、次に述べる第2の光信号送
信装置24から第2の光ファイバ16Bを介して送信さ
れた光信号を受光して電気信号に変換するGaAs系フ
ォトダイオード(以下、PDと言う)を有する第1の光
信号受信装置20とを備えている。第2の光信号受信装
置14は、第1の光ファイバ16Aの他方の端部に光結
合され、第1の光信号送信装置18から第1の光ファイ
バ16Aを介して送信された光信号を受光して電気信号
に変換するGaAs系PDを有する第2の光信号受信装
置22と、第2の光ファイバ16Bの他方の端部に光結
合され、第2の光ファイバ16Bを介して光信号を送信
するGaAs系VCSELと、VCSELを駆動する駆
動装置(図示せず)とを有し、光信号を送信する第2の
光信号送信装置24とを備えている。The first optical signal transmitter / receiver 12 is optically coupled to one end of the first optical fiber 16A, and transmits an optical signal via the first optical fiber 16A. Device (hereinafter referred to as VCSEL),
A first optical signal transmitter 18 having a driving device (not shown) for driving the VCSEL, and a second optical fiber 16B.
A GaAs-based photodiode that is optically coupled to one end of the second optical signal transmitter 24 and receives an optical signal transmitted from a second optical signal transmitter 24 described below via a second optical fiber 16B and converts the optical signal into an electrical signal ( Hereinafter, the first optical signal receiving device 20 having a PD will be provided. The second optical signal receiver 14 is optically coupled to the other end of the first optical fiber 16A and receives the optical signal transmitted from the first optical signal transmitter 18 via the first optical fiber 16A. A second optical signal receiving device 22 having a GaAs-based PD that receives light and converts it into an electrical signal is optically coupled to the other end of the second optical fiber 16B, and an optical signal is transmitted via the second optical fiber 16B. And a drive device (not shown) for driving the VCSEL, and a second optical signal transmission device 24 for transmitting an optical signal.
【0005】[0005]
【発明が解決しようとする課題】しかし、従来の双方向
光通信システムでは、上述のように、2芯の光ファイバ
を必要とする上に、双方の側に光信号送受信装置として
VCSELとPDと並列配置することが必要であるため
に、光信号送受信装置が大型化する。これでは、今後発
展すると思われる個人と個人と間の双方向光通信の分野
に、従来の双方向光通信システムを適用することは難し
い。そこで、本発明の目的は、小型でコンパクトな光信
号送受信装置により単芯の1本の光ファイバを介して双
方向の光通信が可能な光通信システムを提供することで
ある。However, in the conventional bidirectional optical communication system, as described above, the two-core optical fiber is required, and the VCSEL and PD as the optical signal transmitting / receiving devices are provided on both sides. Since it is necessary to arrange them in parallel, the optical signal transmitter / receiver becomes large. With this, it is difficult to apply the conventional bidirectional optical communication system to the field of bidirectional optical communication between individuals, which is expected to develop in the future. Therefore, an object of the present invention is to provide an optical communication system capable of bidirectional optical communication via a single optical fiber by a small and compact optical signal transmitting / receiving apparatus.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る光通信システムは、一方の送受信側及
び他方の送受信側にそれぞれ第1及び第2の光信号送受
信装置を備え、第1及び第2の光信号送受信装置の間で
単芯の1本の光ファイバを介して双方向の光通信を行う
光通信システムであって、第1の光信号送受信装置は、
第1の波長の光信号を出射する第1の面発光型発光素子
と、吸収端波長が第1の波長より短い化合物半導体層で
構成されて第1の面発光型発光素子上に光結合して設け
られ、かつ光ファイバの一方の端部に光結合され、第1
の面発光型発光素子から出射された光信号を透過させて
光ファイバに入射させると共に光ファイバを介して上記
吸収端波長より短い第2の波長の光信号を受光する第1
の受光素子とを備え、第2の光信号送受信装置は、第1
の波長の光信号を受光する第2の受光素子と、吸収端波
長が第1の波長より短い化合物半導体層で構成されて第
2の受光素子上に光結合して設けられ、かつ光ファイバ
の他方の端部に光結合され、光ファイバを介して受信し
た第1の波長の光信号を透過させて第2に受光素子に到
達させると共に光ファイバを介して第2の波長の光信号
を出射する第2の面発光型発光素子とを備えていること
を特徴としている。In order to achieve the above object, an optical communication system according to the present invention comprises first and second optical signal transmission / reception devices on one transmission / reception side and the other transmission / reception side, respectively. An optical communication system for performing bidirectional optical communication between a first optical signal transmitting / receiving device and a second optical signal transmitting / receiving device via a single optical fiber, wherein the first optical signal transmitting / receiving device is
A first surface-emitting light-emitting device that emits an optical signal of a first wavelength and a compound semiconductor layer having an absorption edge wavelength shorter than the first wavelength and are optically coupled onto the first surface-emitting light-emitting device. And is optically coupled to one end of the optical fiber.
First light-transmitting optical signal emitted from the surface-emitting type light-emitting element is incident on the optical fiber, and at the same time, the optical signal having a second wavelength shorter than the absorption edge wavelength is received through the optical fiber.
And a light receiving element of
A second light receiving element for receiving an optical signal having a wavelength of, and a compound semiconductor layer having an absorption edge wavelength shorter than the first wavelength, provided optically coupled to the second light receiving element, and It is optically coupled to the other end and transmits the optical signal of the first wavelength received through the optical fiber to reach the second light receiving element and emits the optical signal of the second wavelength through the optical fiber. And a second surface-emitting type light emitting element that
【0007】一方の送受信側の第1の光信号送受信装置
では、第1の受光素子は、吸収端波長が第1の波長より
短い化合物半導体層で構成され、吸収端波長より短い第
2の波長を受光し、かつ第1の面発光型発光素子から出
射される光信号の波長、つまり第1の波長は、第1の受
光素子を構成する化合物半導体の吸収端波長より長い。
これにより、第1の面発光型発光素子から出射される光
信号は、第1の受光素子で殆ど吸収されることなく光フ
ァイバを介して第2の光信号送受信装置に伝送される。
第2の光信号送受信装置に伝送された第1の波長の光信
号は、上述と同じメカニズムにより、第2の波長の光信
号を出射する第2の面発光型発光素子で殆ど吸収される
ことなく透過し、第1の波長の光信号を受光する第2の
受光素子に達し、受光され、電気信号に変換される。In the first optical signal transmitter / receiver on the transmitting / receiving side, the first light receiving element is composed of a compound semiconductor layer having an absorption edge wavelength shorter than the first wavelength, and a second wavelength shorter than the absorption edge wavelength. The wavelength of the optical signal that receives the light and is emitted from the first surface-emitting light emitting device, that is, the first wavelength, is longer than the absorption edge wavelength of the compound semiconductor that constitutes the first light receiving device.
As a result, the optical signal emitted from the first surface-emitting light emitting element is transmitted to the second optical signal transmitting / receiving device through the optical fiber while being hardly absorbed by the first light receiving element.
The optical signal of the first wavelength transmitted to the second optical signal transmitting / receiving device is almost absorbed by the second surface-emitting light emitting device that emits the optical signal of the second wavelength by the same mechanism as described above. Without passing through, it reaches the second light receiving element that receives the optical signal of the first wavelength, is received, and is converted into an electrical signal.
【0008】他方の送受信側の第2の光信号送受信装置
では、第2の面発光型発光素子から出射された第2の波
長の光信号は、光ファイバを介して一方の送受信側に伝
送される。第2の光信号送受信装置から送信された第2
の波長の光信号は、第2の波長の光信号を受光する第1
の受光素子により受光され、電気信号に変換される。In the second transmitting / receiving side optical signal transmitting / receiving device, the optical signal of the second wavelength emitted from the second surface emitting light emitting element is transmitted to one transmitting / receiving side through the optical fiber. It The second transmitted from the second optical signal transmitter / receiver
The optical signal of the second wavelength receives the optical signal of the second wavelength
Is received by the light receiving element and converted into an electric signal.
【0009】本発明の好適な実施態様では、第1及び第
2の光信号送受信装置が、それぞれ、面発光型発光素子
と受光素子とを一体的に光結合したモジュールとして構
成されている。モジュールは、モノリシック・モジュー
ルでも、ハイブリッド型モジュールでも良い。In a preferred embodiment of the present invention, each of the first and second optical signal transmitting / receiving devices is constructed as a module in which a surface emitting light emitting element and a light receiving element are integrally optically coupled. The module may be a monolithic module or a hybrid type module.
【0010】[0010]
【発明の実施の形態】以下に、実施形態例を挙げ、添付
図面を参照して、本発明の実施の形態を具体的かつ詳細
に説明する。実施形態例
本実施形態例は、本発明に係る双方向光通信システムの
実施形態の一例であって、図1は本実施形態例の光通信
システムの構成を示す模式図である。本実施形態例の光
通信システム30は、一方の送受信側及び他方の送受信
側にそれぞれ第1の光信号送受信装置32及び第2の光
信号送受信装置34を備え、第1の光信号送受信装置3
2と第2の光信号送受信装置34との間に設けられた単
芯の1本の光ファイバ36を介して双方向の光通信を行
う光通信システムである。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings. Embodiment Example This embodiment example is an example of an embodiment of a bidirectional optical communication system according to the present invention, and FIG. 1 is a schematic diagram showing a configuration of an optical communication system of the present embodiment example. The optical communication system 30 of the present embodiment example includes a first optical signal transmitting / receiving device 32 and a second optical signal transmitting / receiving device 34 on one transmitting / receiving side and the other transmitting / receiving side, respectively, and the first optical signal transmitting / receiving device 3
The optical communication system performs bidirectional optical communication via a single optical fiber 36 provided between the second optical signal transmitting / receiving device 34 and the second optical signal transmitting / receiving device 34.
【0011】第1の光信号送受信装置32は、第1の波
長の光信号を出射する第1の面発光型半導体レーザ素子
(以下、VCSELと言う)38と、吸収端部波長が第
1の波長より短い化合物半導体で構成されて第1のVC
SEL38上に光結合して設けられ、かつ光ファイバ3
6の一方の端部に光結合され、上記吸収端波長より短い
第2の波長の光信号を受光する第1のフォトダイオード
(以下、PDと言う)40とを備えている。The first optical signal transmitter / receiver 32 has a first surface emitting semiconductor laser element (hereinafter referred to as VCSEL) 38 for emitting an optical signal of a first wavelength and an absorption edge wavelength of a first wavelength. First VC composed of compound semiconductor shorter than wavelength
The optical fiber 3 is provided on the SEL 38 by optical coupling.
6, a first photodiode (hereinafter, referred to as PD) 40 that is optically coupled to one end of the 6 and receives an optical signal of a second wavelength shorter than the absorption edge wavelength.
【0012】第1のVCSEL38は、発振波長が1.
3μm〜1.55μmのGaInNAs系VCSELで
あって、従って第1の波長の光信号は波長が1.3μm
〜1.55μmの範囲の光信号である。The first VCSEL 38 has an oscillation wavelength of 1.
It is a GaInNAs VCSEL of 3 μm to 1.55 μm, and therefore the optical signal of the first wavelength has a wavelength of 1.3 μm.
It is an optical signal in the range of ˜1.55 μm.
【0013】第1のPD40は、GaAs系の化合物半
導体で形成されている、GaAs系pinフォトダイオ
ードであって、後述するように、第1のPD40の基板
裏面の電極には、第1のVCSEL38から出射された
光信号が通過するように円形に窓が開けられている。第
1のPD40を構成するGaAsのバンドギャップ・エ
ネルギー(1.43eV)に相当する波長、つまり、吸
収端波長は0.88μmであって、第1のVCSEL3
8から出射される光信号の第1の波長、つまり1.3μ
m〜1.55μmの範囲の波長に比べて短いので、第1
のPD40は、第1のVCSEL38から出射された光
信号を第1のPD40内で吸収することなく透過して光
ファイバ36に入射させる一方、第1のPD40は吸収
端波長より短い第2の波長、例えば0.85μmの光信
号を受光する。第1のVCSEL38と第1のPD40
とは、一体的に光結合したモジュールとして構成されて
いる。The first PD 40 is a GaAs-based pin photodiode made of a GaAs-based compound semiconductor. As will be described later, the first PD 40 has a first VCSEL 38 as an electrode on the back surface of the substrate. A circular window is opened so that the optical signal emitted from the device passes through. The wavelength corresponding to the band gap energy (1.43 eV) of GaAs forming the first PD 40, that is, the absorption edge wavelength is 0.88 μm, and the first VCSEL3
The first wavelength of the optical signal emitted from 8 is 1.3 μ
Since it is shorter than the wavelength in the range of m to 1.55 μm,
The PD 40 transmits the optical signal emitted from the first VCSEL 38 without being absorbed in the first PD 40 and allows the optical signal to enter the optical fiber 36, while the first PD 40 has the second wavelength shorter than the absorption edge wavelength. , For example, an optical signal of 0.85 μm is received. First VCSEL 38 and first PD 40
And are configured as a module that is optically coupled together.
【0014】第2の光信号送受信装置34は、第1の波
長の光信号を受光するようにInP基板上に設けられた
InGaAs系化合物半導体から構成された第2のPD
42と、第2のPD42上に光結合して設けられ、かつ
光ファイバ36の他方の端部に光結合され、第2の波長
の光信号を出射するGaAs系面発光型半導体レーザ素
子からなる第2のVCSEL44とを備えている。尚、
図1では、第2のPD42と第2のVCSEL44の位
置関係を便宜的に上下逆さに図示している。上述したメ
カニズムと同じメカニズムにより、第1の波長の光信号
は、第2のVCSEL44を構成するGaAs系の化合
物半導体中を吸収されることなく透過して、第2のPD
42に到達して受光される。第1のPD42と第2のV
CSEL44とは、一体的に光結合したモノリシック・
モジュールとして構成されている。尚、モジュールは、
モノリシックに限らず、ハイブリッド型のモジュールで
も良い。The second optical signal transmitter / receiver 34 is a second PD composed of an InGaAs compound semiconductor provided on the InP substrate so as to receive the optical signal of the first wavelength.
42, and a GaAs-based surface-emitting semiconductor laser device that is optically coupled to the second PD 42 and is optically coupled to the other end of the optical fiber 36 to emit an optical signal of the second wavelength. And a second VCSEL 44. still,
In FIG. 1, the positional relationship between the second PD 42 and the second VCSEL 44 is shown upside down for convenience. By the same mechanism as described above, the optical signal of the first wavelength is transmitted through the GaAs-based compound semiconductor forming the second VCSEL 44 without being absorbed, and the second PD is transmitted.
It reaches 42 and is received. First PD 42 and second V
CSEL44 is a monolithic optical
It is organized as a module. The module is
The module is not limited to monolithic and may be a hybrid type module.
【0015】以上の構成により、本実施形態例の双方向
光通信システム30では、第1の光信号送受信装置32
の第1のVCSEL38から出射された光信号は、第1
のPD40で吸収されることなく透過して光ファイバ3
6に入射し、光ファイバ36を介して第2の光信号送受
信装置34に到達する。第2の光信号送受信装置34に
到達した光信号は、第2のVCSEL44を透過して第
2のPD42で受光される。第2の光信号送受信装置3
4の第2のVCSEL44から出射された光信号は、光
ファイバ36に入射し、光ファイバ36を介して第1の
光信号送受信装置32に到達する。第1の光信号送受信
装置32に到達した光信号は、第1のPD40で受光さ
れる。With the above configuration, in the bidirectional optical communication system 30 of this embodiment, the first optical signal transmitting / receiving device 32 is used.
The optical signal emitted from the first VCSEL 38 of
The optical fiber 3 is transmitted without being absorbed by the PD 40.
6, and reaches the second optical signal transmitter / receiver 34 via the optical fiber 36. The optical signal that has reached the second optical signal transmission / reception device 34 passes through the second VCSEL 44 and is received by the second PD 42. Second optical signal transmitter / receiver 3
The optical signal emitted from the second VCSEL 44 of No. 4 enters the optical fiber 36 and reaches the first optical signal transmitter / receiver 32 via the optical fiber 36. The optical signal that reaches the first optical signal transmitting / receiving device 32 is received by the first PD 40.
【0016】本実施形態例では、第1のVCSEL38
をGaInNAs系の化合物半導体で構成しているが、
InGaAsP系の化合物半導体で構成しても良い。In the present embodiment, the first VCSEL 38
Is composed of a GaInNAs-based compound semiconductor,
It may be composed of an InGaAsP-based compound semiconductor.
【0017】ここで、図2及び図3を参照して、第1及
び第2の光信号送受信装置32、34の構成を説明す
る。図2(a)及び(b)は、第1の光信号送受信装置
の構成を示す断面図及び平面図であり、図3(a)及び
(b)は、第2の光信号送受信装置の構成を示す断面図
及び平面図である。第1の光信号送受信装置32は、図
2(a)に示すように、第1のVCSEL38と、第1
のVCSEL38上に光結合して設けられた第1のPD
40とを有する。Here, the configurations of the first and second optical signal transmitting / receiving devices 32 and 34 will be described with reference to FIGS. 2A and 2B are a cross-sectional view and a plan view showing the configuration of the first optical signal transmitting / receiving apparatus, and FIGS. 3A and 3B show the configuration of the second optical signal transmitting / receiving apparatus. FIG. 3 is a cross-sectional view and a plan view showing As shown in FIG. 2A, the first optical signal transmitter / receiver 32 includes a first VCSEL 38 and a first VCSEL 38.
First PD optically coupled to the VCSEL 38 of
40 and.
【0018】第1のVCSEL38は、GaInNAs
系の面発光型半導体レーザ素子であって、図2(a)に
示すように、n−GaAs基板46と、n−GaAs基
板46上に設けられた一対の多層膜反射鏡48A、B
と、一対の多層膜反射鏡48A、Bによって上下が挟ま
れ、活性層50を有する発光層52と、多層膜反射鏡4
8B上にコンタクト層54を介して設けられたp側電極
56と、n−GaAs基板46の裏面に設けられたn側
電極58とを備えている。また、p側電極56には、光
信号を透過させる円形の窓60が設けてある。第1のP
D40は、GaAs系のpinフォトダイオードであっ
て、図2(a)及び(b)に示すように、n−GaAs
基板62上に設けられ、i層の活性層64を有するGa
As系受光層66と、受光層66上に設けられたp側電
極68とを備えている。また、p側電極68には光信号
を透過させる円形の窓70が設けてある。The first VCSEL 38 is a GaInNAs
2A, which is a surface-emitting type semiconductor laser device of a system, as shown in FIG.
And a pair of multi-layered film reflecting mirrors 48A and 48B sandwiching the upper and lower sides of the light-emitting layer 52 having an active layer 50 and the multi-layered film reflecting mirror
8B is provided with a p-side electrode 56 provided via a contact layer 54, and an n-side electrode 58 provided on the back surface of the n-GaAs substrate 46. Further, the p-side electrode 56 is provided with a circular window 60 for transmitting an optical signal. First P
D40 is a GaAs-based pin photodiode, and as shown in FIGS.
Ga provided on the substrate 62 and having an i-layer active layer 64
An As-based light receiving layer 66 and a p-side electrode 68 provided on the light receiving layer 66 are provided. Further, the p-side electrode 68 is provided with a circular window 70 for transmitting an optical signal.
【0019】第1のPD40のn側電極は、第1のVC
SEL38のp側電極56と共通電極になっている。更
に、共通電極56には引き出し電極として、第1のPD
40の層構造を貫通して共通電極56に導通するコンタ
クトプラグ72が層構造との間に絶縁膜74を介して設
けてある。コンタクトプラグ72に引き出しワイヤを設
けることにより、第1のVCSEL38のp側電極(共
通電極)56とn側電極58との間に電流を注入し、ま
た第1のPD40のp側電極68とn側電極(共通電
極)56との間から電流を引き出すことが容易に出来
る。The n-side electrode of the first PD 40 is connected to the first VC
It is a common electrode with the p-side electrode 56 of the SEL 38. Further, the common electrode 56 has a first PD as a lead electrode.
A contact plug 72 that penetrates through the layer structure of 40 and is electrically connected to the common electrode 56 is provided via an insulating film 74 between the contact plug 72 and the layer structure. By providing a lead wire to the contact plug 72, a current is injected between the p-side electrode (common electrode) 56 and the n-side electrode 58 of the first VCSEL 38, and the p-side electrode 68 and n of the first PD 40 are connected. It is possible to easily draw a current from between the side electrode (common electrode) 56.
【0020】第2の光信号送受信装置34は、図3
(a)及び(b)に示すように、第2のPD42と、第
2のPD42上に光結合して設けられた第2のVCSE
L44とを有する。第2のPD42は、InGaAs系
のpinフォトダイオードであって、図3(a)に示す
ように、n−InP基板76上に設けられ、i層の活性
層78を有するInGaAs系受光層80と、受光層8
0上に設けられたp側電極82と、n−InP基板76
の裏面に設けられたn側電極84とを備えている。ま
た、p側電極82には光信号を透過させる円形の窓86
が設けてある。The second optical signal transmitter / receiver 34 is shown in FIG.
As shown in (a) and (b), the second PD 42 is optically coupled to the second PD 42 on the second PD 42.
L44 and. The second PD 42 is an InGaAs-based pin photodiode. As shown in FIG. 3A, the second PD 42 is provided on the n-InP substrate 76 and an InGaAs-based light-receiving layer 80 having an i-layer active layer 78. , Light-receiving layer 8
0 and the p-side electrode 82 and the n-InP substrate 76
And an n-side electrode 84 provided on the back surface of the. A circular window 86 for transmitting an optical signal is formed in the p-side electrode 82.
Is provided.
【0021】第2のVCSEL44は、GaAs系の面
発光型半導体レーザ素子であって、図3(a)及び
(b)に示すように、n−GaAs基板88と、n−G
aAs基板88上に設けられた一対の多層膜反射鏡90
A、Bと、一対の多層膜反射鏡90A、Bによって上下
が挟まれ、活性層92を有する発光層94と、多層膜反
射鏡90B上にコンタクト層96を介して設けられたp
側電極98とを有する。p側電極98は、図3(b)に
示すように、光信号を透過させる円形の窓100を有す
るリング状の電極であって、引き出し電極102に接続
されている。The second VCSEL 44 is a GaAs surface-emitting type semiconductor laser device, and has an n-GaAs substrate 88 and an n-G substrate as shown in FIGS.
A pair of multilayer film reflecting mirrors 90 provided on the aAs substrate 88.
A light emitting layer 94 having an active layer 92 is sandwiched between A and B and a pair of multilayer film reflecting mirrors 90A and 90B, and p provided on the multilayer film reflecting mirror 90B via a contact layer 96.
And a side electrode 98. As shown in FIG. 3B, the p-side electrode 98 is a ring-shaped electrode having a circular window 100 that transmits an optical signal, and is connected to the extraction electrode 102.
【0022】第2のVCSEL44のn側電極は、第2
のPD42のp側電極82と共通電極になっている。更
に、共通電極82には引き出し電極として、第2のVC
SEL44の層構造を貫通して共通電極82に導通する
コンタクトプラグ104が層構造との間に絶縁膜106
を介して設けてある。コンタクトプラグ104に引き出
しワイヤを設けることにより、第2のPD42のp側電
極(共通電極)82とn側電極84との間から電流を引
き出し、第2のVCSEL44のp側電極98とn側電
極82(共通電極)との間に電流を注入することが容易
に出来る。The n-side electrode of the second VCSEL 44 is the second
The PD 42 serves as a common electrode with the p-side electrode 82. Further, the common electrode 82 has a second VC as a lead electrode.
The insulating film 106 is formed between the contact plug 104 that penetrates the layer structure of the SEL 44 and is electrically connected to the common electrode 82.
It is provided through. By providing a lead wire to the contact plug 104, a current is drawn from between the p-side electrode (common electrode) 82 and the n-side electrode 84 of the second PD 42, and the p-side electrode 98 and the n-side electrode of the second VCSEL 44 are drawn. It is possible to easily inject a current between 82 (common electrode).
【0023】以上の構成により、本実施形態例の双方向
光通信システム30は、単芯の1本の光ファイバ36を
介して双方向の光通信が可能なシステムであって、光フ
ァイバ36の両端部に設けた第1及び第2の光信号送受
信装置32、34の構成をコンパクトで小型化すること
ができる。With the above configuration, the bidirectional optical communication system 30 of the present embodiment is a system capable of bidirectional optical communication through a single optical fiber 36, and the optical fiber 36 The configurations of the first and second optical signal transmission / reception devices 32 and 34 provided at both ends can be made compact and compact.
【0024】[0024]
【発明の効果】本発明によれば、長波長用の面発光型発
光素子と、面発光型発光素子上に光結合されて設けられ
た短波長用の受光素子とで一方の送受信側の第1の光信
号送受信装置を構成し、かつ、長波長用の受光素子と、
受光素子上に光結合されて設けられた短波長用の面発光
型発光素子とで他方の送受信側の第2の光信号送受信装
置を構成することにより、第1及び第2の光信号送受信
装置をコンパクトで小型化し、かつ第1及び第2の光信
号送受信装置との間で単芯の1本の光ファイバを介して
双方向の光通信を行うことができる光通信システムを実
現している。According to the present invention, a long-wavelength surface-emitting light-emitting element and a short-wavelength light-receiving element optically coupled to the surface-emitting light-emitting element are provided on one of the transmitting and receiving sides. 1. An optical signal transmitting / receiving device of 1, and a light receiving element for long wavelength,
First and second optical signal transmitting / receiving devices by configuring a second optical signal transmitting / receiving device on the other transmitting / receiving side with a surface emitting type light emitting device for short wavelength, which is optically coupled on the light receiving device. And an optical communication system capable of performing two-way optical communication with the first and second optical signal transmission / reception devices via a single optical fiber. .
【図1】実施形態例の光通信システムの構成を示す模式
図である。FIG. 1 is a schematic diagram illustrating a configuration of an optical communication system according to an exemplary embodiment.
【図2】図2(a)及び(b)は、それぞれ、第1の光
信号送受信装置の構成を示す断面図及び平面図である。FIG. 2A and FIG. 2B are a cross-sectional view and a plan view showing a configuration of a first optical signal transmitting / receiving apparatus, respectively.
【図3】図3(a)及び(b)は、それぞれ、第2の光
信号送受信装置の構成を示す断面図及び平面図である。FIG. 3A and FIG. 3B are a cross-sectional view and a plan view showing a configuration of a second optical signal transmitting / receiving apparatus, respectively.
【図4】光通信システムの概念を説明する図である。FIG. 4 is a diagram illustrating the concept of an optical communication system.
【図5】従来の双方向の光通信システムの構成を示す模
式図である。FIG. 5 is a schematic diagram showing a configuration of a conventional bidirectional optical communication system.
10……従来の双方向の光通信システム、12……一方
の側に設けられた光信号送受信装置、14……他方の側
に設けられた光信号送受信装置、16……光ファイバ、
18……第1の光信号送信装置、20……第1の光信号
受信装置、22……第2の光信号受信装置、24……第
2の光信号送信装置、30……実施形態例の光通信シス
テム、32……第1の光信号送受信装置、34……第2
の光信号送受信装置、36……光ファイバ、38……第
1のVCSEL、40……第1のPD、42……第2の
PD、44……第2のVCSEL、46……n−GaA
s基板、48……多層膜反射鏡、50……活性層、52
……発光層、54……コンタクト層、56……共通電
極、58……n側電極、60……窓、62……n−Ga
As基板、64……i層の活性層、66……受光層、6
8……p側電極、70……窓、72……コンタクトプラ
グ、74……絶縁膜、76……n−InP基板、78…
…i層の活性層、80……InGaAs系受光層、82
……共通電極、84……n側電極、86……窓、88…
…n−GaAs基板、90……多層膜反射鏡、92……
活性層、94……発光層、96……コンタクト層、98
……p側電極、100……窓、102……引き出し電
極、104……コンタクトプラグ、106……絶縁膜。10 ... Conventional bidirectional optical communication system, 12 ... Optical signal transmitting / receiving apparatus provided on one side, 14 ... Optical signal transmitting / receiving apparatus provided on other side, 16 ... Optical fiber,
18 ... 1st optical signal transmitter, 20 ... 1st optical signal receiver, 22 ... 2nd optical signal receiver, 24 ... 2nd optical signal transmitter, 30 ... Example of embodiment Optical communication system, 32 ... First optical signal transmitting / receiving device, 34 ... Second
Optical signal transmitter / receiver, 36 ... Optical fiber, 38 ... First VCSEL, 40 ... First PD, 42 ... Second PD, 44 ... Second VCSEL, 46 ... n-GaA
Substrate, 48 ... Multilayer mirror, 50 ... Active layer, 52
...... Emitting layer, 54 ...... Contact layer, 56 ...... Common electrode, 58 ...... n side electrode, 60 ...... Window, 62 ...... n-Ga
As substrate, 64 ... i active layer, 66 ... light receiving layer, 6
8 ... p-side electrode, 70 ... window, 72 ... contact plug, 74 ... insulating film, 76 ... n-InP substrate, 78 ...
... i active layer, 80 ... InGaAs light receiving layer, 82
...... Common electrode, 84 ...... n side electrode, 86 ...... Window, 88 ...
... n-GaAs substrate, 90 ... multilayer mirror, 92 ...
Active layer, 94 ... Light emitting layer, 96 ... Contact layer, 98
... p-side electrode, 100 ... window, 102 ... extraction electrode, 104 ... contact plug, 106 ... insulating film.
Claims (2)
れぞれ第1及び第2の光信号送受信装置を備え、第1及
び第2の光信号送受信装置の間で単芯の1本の光ファイ
バを介して双方向の光通信を行う光通信システムであっ
て、 第1の光信号送受信装置は、第1の波長の光信号を出射
する第1の面発光型発光素子と、 吸収端波長が第1の波長より短い化合物半導体層で構成
されて第1の面発光型発光素子上に光結合して設けら
れ、かつ光ファイバの一方の端部に光結合され、第1の
面発光型発光素子から出射された光信号を透過させて光
ファイバに入射させると共に光ファイバを介して上記吸
収端波長より短い第2の波長の光信号を受光する第1の
受光素子とを備え、 第2の光信号送受信装置は、第1の波長の光信号を受光
する第2の受光素子と、 吸収端波長が第1の波長より短い化合物半導体層で構成
されて第2の受光素子上に光結合して設けられ、かつ光
ファイバの他方の端部に光結合され、光ファイバを介し
て受信した第1の波長の光信号を透過させて第2に受光
素子に到達させると共に光ファイバを介して第2の波長
の光信号を出射する第2の面発光型発光素子とを備えて
いることを特徴とする双方向光通信システム。1. An optical fiber having a single core between the first and second optical signal transmission / reception devices, which is provided with first and second optical signal transmission / reception devices on one transmission / reception side and the other transmission / reception side, respectively. An optical communication system for performing bidirectional optical communication via a first optical signal transmitting / receiving device, wherein a first surface emitting light emitting element for emitting an optical signal of a first wavelength and an absorption edge wavelength A first surface-emitting type light-emitting device which is composed of a compound semiconductor layer shorter than the first wavelength, is provided on the first surface-emitting type light-emitting device by optical coupling, and is optically coupled to one end of the optical fiber. A first light receiving element for transmitting an optical signal emitted from the element to enter the optical fiber and for receiving an optical signal having a second wavelength shorter than the absorption edge wavelength through the optical fiber; The optical signal transmitting / receiving device includes a second light receiving element that receives an optical signal of the first wavelength. And a compound semiconductor layer having an absorption edge wavelength shorter than the first wavelength, provided optically coupled to the second light receiving element, and optically coupled to the other end of the optical fiber. A second surface-emitting light-emitting element that transmits the optical signal of the first wavelength received via the second optical path to reach the light receiving element and emits the optical signal of the second wavelength via the optical fiber. A two-way optical communication system characterized in that
れぞれ、面発光型発光素子と受光素子とを一体的に光結
合したモジュールとして構成されていることを特徴とす
る請求項1に記載の双方向光通信システム。2. The first and second optical signal transmission / reception devices are each configured as a module in which a surface emitting light emitting element and a light receiving element are integrally optically coupled. Bidirectional optical communication system described.
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006523428A (en) * | 2003-04-02 | 2006-10-12 | サン・マイクロシステムズ・インコーポレイテッド | Optical communication between facing semiconductor chips |
JP2007207845A (en) * | 2006-01-31 | 2007-08-16 | Sony Corp | Semiconductor light emitting device |
JP2008097569A (en) * | 2006-09-11 | 2008-04-24 | Yokogawa Electric Corp | Data transmission apparatus |
US7386641B2 (en) | 2006-04-18 | 2008-06-10 | Owlink Technology, Inc. | Protocol for uncompressed multimedia data transmission |
US7400801B1 (en) | 2007-06-19 | 2008-07-15 | Owlink Technology, Inc. | Bidirectional HDCP module using single optical fiber and waveguide combiner/splitter |
JP2011044447A (en) * | 2009-08-19 | 2011-03-03 | Canon Inc | Surface-emitting laser |
US8150261B2 (en) | 2007-05-22 | 2012-04-03 | Owlink Technology, Inc. | Universal remote control device |
JP2012209345A (en) * | 2011-03-29 | 2012-10-25 | Sony Corp | Light emitting device-light receiving device assembly, and manufacturing method thereof |
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2002
- 2002-03-12 JP JP2002066272A patent/JP4045590B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006523428A (en) * | 2003-04-02 | 2006-10-12 | サン・マイクロシステムズ・インコーポレイテッド | Optical communication between facing semiconductor chips |
JP2007207845A (en) * | 2006-01-31 | 2007-08-16 | Sony Corp | Semiconductor light emitting device |
US7386641B2 (en) | 2006-04-18 | 2008-06-10 | Owlink Technology, Inc. | Protocol for uncompressed multimedia data transmission |
JP2008097569A (en) * | 2006-09-11 | 2008-04-24 | Yokogawa Electric Corp | Data transmission apparatus |
US8150261B2 (en) | 2007-05-22 | 2012-04-03 | Owlink Technology, Inc. | Universal remote control device |
US7400801B1 (en) | 2007-06-19 | 2008-07-15 | Owlink Technology, Inc. | Bidirectional HDCP module using single optical fiber and waveguide combiner/splitter |
JP2011044447A (en) * | 2009-08-19 | 2011-03-03 | Canon Inc | Surface-emitting laser |
JP2012209345A (en) * | 2011-03-29 | 2012-10-25 | Sony Corp | Light emitting device-light receiving device assembly, and manufacturing method thereof |
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JP4045590B2 (en) | 2008-02-13 |
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