JP2003257931A - Substrate treatment apparatus and semiconductor device manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the formation of a water mark. <P>SOLUTION: A chemical liquid vessel 2-6, a chemical liquid vessel 3, a reaction vessel 4 and a chemical liquid vessel 5 store identical chemical solutions. The chemical liquid vessel 2-6 is used for cleaning a final stage in a preceding stage. A carrier 11 is transferred to the chemical liquid vessel 3 from the vessel 2-6 when a gate valve 31 is opened. A substrate 41 mounted to the carrier 11 is loaded to a jig 34 by a loading device 33. The jig 34 is transferred to the reaction vessel 4 and the substrate 41 is subjected to a predetermined process, for example, a process by anode formation in the reaction vessel 4. A treated substrate 42 is transferred to the chemical liquid vessel 3 from the reaction vessel 4 together with the jig 34. The substrate 42 is loaded to a carrier 12 and the carrier 12 is transferred to the chemical liquid vessel 5 when a gate valve 37 is opened. During this period, the substrates 11 and 12 are not placed under the atmospheric condition. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a semiconductor device manufacturing apparatus, and more particularly to a substrate processing apparatus and a semiconductor device manufacturing apparatus suitable for producing porous silicon or the like which becomes a semiconductor substrate by anodization. Regarding

[0002]

2. Description of the Related Art Porous silicon used for producing a semiconductor substrate used for electric appliances includes, for example, silicon (Si) for an anode and hydrofluoric acid (HF) for an ion conductor. , Is formed by performing electrolysis using each of them. The method of producing porous silicon in this way is called anodization.

[0003]

In the process of producing porous silicon, when a silicon substrate is placed in an anodizing bath for performing anodizing treatment, or when the treated silicon substrate is taken out from the anodizing bath, There was a problem that particles and contamination would adhere.

If particles or contamination adheres to the silicon substrate, there is a problem in that the crystallinity of the epitaxial growth film in the subsequent processing is deteriorated.

Since the surface of porous silicon has a large area covered with fine pores, it has a problem that the surface energy is much stronger than that of a normal silicon substrate and a watermark is likely to be formed. The portion with the watermark cannot be used as a substrate, and there is a problem that the yield is reduced.

The present invention has been made in view of such circumstances, and an object of the present invention is to produce porous silicon so that particles and contamination are not attached and a watermark is not attached.

[0007]

In order to solve the above problems, a substrate processing apparatus to which the present invention is applied is, firstly, an anodizing tank for subjecting a substrate to an anodizing treatment in a chemical solution, and processing in an anodizing tank. The present invention is characterized in that a holding means for holding a treated or treated substrate and a conveying means for conveying the treated or treated substrate in the anodizing bath are provided in the treatment tank filled with the chemical solution. .

Secondly, in addition to the first aspect, a cleaning tank for loading a chemical solution to clean the substrate and a storage tank for loading the chemical solution and storing the holding means are further included. The gist is that each of the substrates is connected to a processing tank so that the substrate is transported in the chemical solution.

Thirdly, in addition to the first aspect, the gist is that the anodizing bath is a sealed type in which all parts are provided in the chemical solution.

Fourthly, in addition to the first aspect, the gist is that the anodizing bath is an open type, a part of which is provided outside the chemical solution.

Fifth, in addition to the first aspect, among the bubble removing means for removing bubbles contained in the chemical solution and the particle removing means for removing particles contained in the chemical solution,
It is a gist to further include at least one means.

Sixthly, in addition to the first aspect, a gist is that a circulation means for circulating a chemical solution is further included.

The manufacturing apparatus of the present invention comprises: a step of forming a porous layer by making the surface of a substrate porous; a step of forming a semiconductor layer on the substrate via the porous layer; And a step of forming a porous layer, in which the porous layer is separated from the substrate, and the step of forming the porous layer is performed by anodizing the substrate in a chemical solution, and holding the substrate that has been or has been treated in the anodizing bath. The gist is that the holding means and the transport means for transporting the treated or treated substrate to the anodizing bath are carried out in a treatment bath provided in the chemical solution.

Next, the operation will be described.

In a substrate processing apparatus to which the present invention is applied or a manufacturing apparatus for manufacturing a semiconductor device using a substrate processed by the substrate processing apparatus, an anodizing bath for anodizing the substrate in a chemical solution Holding means for holding a substrate to be treated or treated in the bath, and
Since the anodizing tank is equipped with a transport means for transporting the treated or treated substrate inside the treatment tank filled with the chemical solution, it is possible to prevent the formation of watermarks etc. without exposing the substrate to the atmosphere. Becomes

Air bubbles contained in the chemical solution are removed, and
By removing the particles, it becomes possible to more reliably prevent the formation of watermarks and the like.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below, and the correspondence between the matters specifying the invention described in the claims and specific examples in the embodiments of the invention will be exemplified as follows. Become. This description is for confirming that the specific examples supporting the invention described in the claims are described in the embodiments of the invention. Therefore, even if there is a specific example which is described in the embodiment of the invention but is not described here as a matter corresponding to the matters specifying the invention, the fact is that the specific example is the invention. It does not mean that it does not correspond to a specific matter. On the contrary, even if a specific example is described here as corresponding to an invention specifying matter, this does not mean that the specific example does not correspond to an invention specifying matter other than the invention specifying matter. It does not mean.

Further, this description does not mean that the inventions corresponding to the specific examples described in the embodiments of the invention are all described in the claims. In other words, this description is an invention corresponding to the specific examples described in the embodiments of the invention, and the existence of an invention not described in the claims of this application, that is, a future divisional application, It does not deny the existence of inventions added by amendment or domestic priority.

The basic structure of a substrate processing apparatus to which the present invention is applied is an anodizing bath for anodizing a substrate in a chemical solution, holding means for holding a substrate which has been or has been treated in the anodizing bath, and The anodizing bath includes at least a transport means for transporting the substrate to be treated or treated. In the present embodiment, for example, the reaction layer 4 shown in FIG. 1 is taken as an example of the anodizing bath, and the carrier 11 (12) shown in FIG. As an example, the transfer device 35 shown in FIG. 4 is taken as an example.

In addition to the above configuration, for example, the cleaning tank 2 shown in FIG. 1 will be taken as an example, and the cleaning tank in which a chemical solution is loaded to clean the substrate and the chemical solution layer 5 shown in FIG. 1 will be taken as an example. And a storage tank in which the liquid medicine is loaded and which holds the holding means.

In addition to the above configuration, for example, a filter 61 shown in FIG. 6 is taken as an example to further include bubble removing means for removing bubbles contained in the chemical solution, and particle removing means for removing particles contained in the chemical solution. Can be

In addition to the above-mentioned structure, for example, a pump 62 shown in FIG. 6 may be taken as an example to further include a circulating means for circulating a chemical solution.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing the configuration of an embodiment in which the present invention is applied to a substrate processing apparatus for processing a substrate by performing anodization treatment. The surface of the substrate is made porous by the substrate processing apparatus to form a porous layer.
A semiconductor layer is formed on the substrate processed by the substrate processing apparatus via the porous layer by the processing of the subsequent apparatus, and the porous layer is separated from the substrate for the semiconductor layer. In this way, the semiconductor device is manufactured.

A carrier installation table 1 as a substrate processing apparatus
For example, the carrier 11 in which 15 silicon substrates are loaded is installed. The installed carrier 11 is transported to the cleaning tank 2. Although only one cleaning tank 2 is shown in FIG. 1, the cleaning tank 2 is composed of a plurality of cleaning tanks, as will be described later.

The carrier 11 is further transported from the final stage cleaning tank in the cleaning tank 2 to the chemical liquid tank 2. Chemical tank 3
One substrate is transported to and installed in the reaction tank 4 from the carrier 11 that is transported and installed in. In the reaction tank 4, a predetermined process is performed on the substrate. For example, in the reaction tank 4, a silicon substrate is subjected to anodization treatment to generate porous (porous) silicon. The treated substrate is a carrier 1 different from the carrier 11.
Returned to 2.

When the treatment in the reaction tank 4 is performed on all the substrates (for example, 15 sheets) loaded in the carrier 11, the carrier 12 loaded with the treated substrates is treated with the chemical solution. It is transported to the tank 5. The last septic tank of the septic tank 2, the chemical liquid tank 3, the reaction tank 4, and the chemical liquid tank 5 are respectively filled with the same chemical liquid, and between these tanks,
The carrier 12 is transported without touching the substrate in the air.

The carrier 12 is transported from the chemical solution tank 5 to the pure water tank 6 filled with pure water. The substrates loaded in the carrier 12 in the pure water tank 6 are washed. After the cleaning is completed, the carrier 12 is conveyed to the rotary dryer 7. In the rotary dryer 7, the carrier 12 (the substrate loaded in the carrier 12) is rotated to be dried. When the drying in the rotary dryer 7 is completed,
The carrier 12 is transported to the carrier installation table 8. The carrier 12 installed on the carrier installation table 8 is delivered to the next step (not shown).

FIG. 2 is a diagram showing the configuration of another embodiment in which the present invention is applied to a system for performing anodizing treatment. In the system shown in FIG. 2, the pure water tank 6 of the system shown in FIG.
The PA (Isopropyl Alcohol) dryer 22 is replaced with each other. The chemical liquid tank 21 is filled with the same chemical liquid as the chemical liquid tank 5, and a plurality of (for example, 4
The individual carriers 12 can be stored. Further, an ultrasonic wave generating device may be attached to the chemical liquid tank 21 to perform ultrasonic cleaning.

For example, four carriers 12 are placed in the chemical bath 21.
When stored, one of the four carriers 12
The (four carriers 12) are conveyed to the IPA drying device 22. The IPA drying device 22 is a device that forms an IPA layer on the surface of pure water and allows the substrate to pass through the IPA layer to dry the substrate. This IPA dryer 22
Is a drying method effective for removing water and particles that cause water marks.

FIG. 3 is a diagram showing a detailed structure of the septic tank 2. The carrier 11 installed on the carrier installation table 1 (FIG. 1) is first transported to the pure water tank 2-1 and washed with pure water. Then, it is conveyed to the hydrofluoric acid tank 2-2. In the hydrofluoric acid tank 2-2, for example, the concentration is 50%.
Is filled with a mixed solution of hydrofluoric acid and pure water, and the volume ratio thereof is, for example, hydrofluoric acid: pure water = 1: 50.

The carrier 11 loaded with the substrate which has been cleaned in the hydrofluoric acid tank 2-2 is a pure water tank 2-
After the cleaning of No. 3, it is conveyed to the RCA cleaning tank 2-4. R
The CA cleaning tank 2-3 is a tank that performs cleaning based on RCA cleaning, and is filled with, for example, a mixed liquid of ammonium hydroxide (ammonia water), hydrogen peroxide water, and pure water. The volume ratio is, for example, ammonia water: hydrogen peroxide water: pure water = 1: 1: 5. The liquid temperature of this mixed liquid is maintained at about 70 degrees.

When the cleaning in the RCA cleaning tank 2-4 is completed, the cleaning in the pure water tank 2-5 is performed, and then the chemical liquid tank 2-
6 is transported. The chemical liquid tank 2-6 includes a chemical liquid tank 3 (see FIG.
The same chemical liquid as that filled in 2) is filled.
For example, in the reaction tank 4 (FIGS. 1 and 2), when anodizing treatment is performed, a mixed solution of hydrofluoric acid and ethanol is used as a chemical solution. The concentration of hydrofluoric acid is adjusted to 50%, for example. Further, the mixed solution as the chemical solution is adjusted at a volume ratio of hydrofluoric acid: ethanol = 1: 1.

FIG. 4 is a diagram showing a detailed configuration of the chemical liquid tank 2-6, the chemical liquid tank 3, the reaction tank 4, and the chemical liquid tank 5. The configuration shown in FIG. 4 corresponds to the system shown in FIG. As described above, the chemical liquid tank 2-6, the chemical liquid tank 3, the reaction tank 4, and the chemical liquid tank 5 are filled with the same chemical liquid, in this case, a mixed liquid of hydrofluoric acid and ethanol, in each tank. Has been done. A gate valve 31 is provided between the chemical liquid tank 2-6 and the chemical liquid tank 3, and the gate valve 3
In the state where 1 is opened, the carrier 11 is transported from the chemical liquid tank 2-6 to the chemical liquid tank 3 by the transport device 21.

After the carrier 11 is transferred to the chemical bath 3,
The gate valve 31 is closed. And carrier 11
For example, one of the fifteen substrates 41 loaded in the substrate is extracted from the carrier 11 by the loading device 33 and loaded into the jig 34. The substrate 41 loaded in the jig 34 is transferred to the reaction tank 4 by the transfer device 35. In the reaction tank 4, the transferred substrate 4 is transferred as described above.
Anodization treatment is applied to 1. Here, the substrate 41 that has been subjected to the anodization treatment is referred to as a substrate 42.

When the processing is completed, the substrate 42 is returned to the chemical liquid tank 3 by the transfer device 35. And the loading device 33
Remove the substrate 42 from the jig 34,
Load 2 By performing such processing on all the substrates 41 loaded in the carrier 11,
The substrate 42 that has been subjected to anodization is loaded into the carrier 12.

A gate valve 37 is also provided between the chemical liquid tank 3 and the chemical liquid tank 5, and when the gate valve 37 is opened, the carrier 12 causes the carrier 12 to move the carrier 12 to the chemical liquid tank 3.
Is transported to the chemical liquid tank 5.

In the case of the system shown in FIG. 2, the chemical solution tank 5
In addition, a chemical liquid tank 21 is further provided through a gate valve (not shown).
Are connected. The carrier 12 transported to the chemical solution tank 5 is
When the gate valve is opened by a transfer device (not shown), it is transferred to the chemical liquid tank 21. The chemical tank 21 is configured to store a plurality of carriers 12, and the carrier 12 is repeatedly conveyed until a predetermined number of carriers 12 are stored.

In the configuration example shown in FIG. 4, the gate valve 3
1, 37 are provided, but they are not always necessary, and a configuration without them is also possible. Further, although an example in which a plurality of tanks are configured has been shown, it is possible to combine two or more tanks into one tank if necessary.

As described above, the substrate 41 (substrate 42) moves from the chemical liquid tank 2-6 to the chemical liquid tank 3, the chemical liquid tank 3 to the reaction tank 4, the reaction tank 4 to the chemical liquid tank 3, and the chemical liquid. Transfer from the tank 3 to the chemical tank 5, and from the chemical tank 5 to the chemical tank 21
In each step (when the system configuration shown in FIG. 2 is applied), that is, without being exposed to the chemical solution, in other words, without being exposed to the air, and in each tank, the air is exposed to the air. There is no touch. Preventing contact with air makes it possible to prevent watermarks that are formed in the presence of air (oxygen).

The watermark is shown in FIG.
This will be described with reference to (A) to (D). 5A to 5C show cross-sectional structures, and FIG. 5D shows a state in which the surface is viewed from directly above.

The watermarks are oxygen (O ₂ ), water (H ₂
0) and three elements of silicon (Si) are present. As shown in FIG. 5A, silicon 5
When No. 1 is washed with diluted hydrofluoric acid (HF) or the like, the surface is terminated with hydrogen 52. However, FIG.
As shown in (B), water 53 adheres to the silicon 51 that is terminated by hydrogen 52 and is dried in that state,
When the water 53 evaporates, oxygen 54 is attached instead of the hydrogen 52 attached to the surface of the silicon 51 (an oxidation reaction occurs).

Silicon 5 with oxygen 54 attached in this way
The portion 1 becomes a watermark 55 such as a stain, as shown in FIG. Since the silicon 51 having the watermark 55 cannot be used as a substrate, the yield is reduced. Therefore,
It is important to proceed with the processing so as not to form the watermark 55. This improves yield,
This will improve the reliability of the final product.

Therefore, as described above, the treatment is carried out in the chemical solution, in other words, the treatment is carried out without touching the air (oxygen) to prevent the oxidation reaction and the watermark 5
5 is prevented from being formed. The presence of particles is one of the causes of preventing the oxidation reaction and forming the watermark 55. Therefore, particles are also removed to prevent the formation of the watermark 55.

Particles can be removed by providing a filter. For example, as shown in FIG. 6, the chemical liquid tank 2-6 is provided with a filter 61-1 for removing particles. The filter 61-1 is operated by the pump 62-1 so that the tank 63-1
The chemical solution stored in is supplied. The tank 63-1 is in communication with the chemical liquid tank 2-6, and the chemical liquid is circulated by operating the pump 62-1. In the process of circulating the chemical liquid, the chemical liquid is filtered by the filter 61-
After passing 1, the particles are removed.

The filter 61-1 may be provided with a filter for removing air bubbles in addition to the one for removing particles. Each of the tanks is provided with such a system for circulating the chemical liquid such as the filter 61-1, the pump 62-2, and the tank 63-1 to remove particles and the like. In the example shown in FIG. 6, an example in which each tank is provided is shown, but one system may be shared by a plurality of tanks.

FIG. 7 is a diagram showing an example of the internal structure of the chemical liquid tank 3 and the reaction tank 4. In the configuration example shown in FIG. 7, a reaction tank 4 is provided inside the chemical liquid tank 3. The reaction tank 4 is provided with a circulation pipe 71-1 connected to the filter 61-3 and a circulation pipe 71-2 connected to the tank 63-3. Pt (platinum) electrodes 7 are provided above and below the reactor 4 in the figure.
1-1 and a Pt electrode 72-2 are provided, one of which is connected to an anode of a power supply voltage (not shown) and the other of which is connected to a cathode.

The carrier 11 is loaded with, for example, fifteen substrates 41, one of which is the loading device 3
It is moved to the jig 34-2 by 3. Jig 34-2
When the substrate 41 is placed on the jig 41, the jig 34-1 is placed so as to sandwich the substrate 41. Board 4
The jig 34 in the form of sandwiching 1 is mounted on the reaction tank 4 with the conveying device 3
It is transported by 5 and installed at a predetermined position. In FIG. 7, both the jigs 34 before and after being installed are described.

When the processing (reaction of anodization) in the reaction tank 4 is completed, the jig 34 is pulled out from the reaction tank 4 to the chemical liquid tank 3 by the carrier device 35. Then, when the substrate 41 is conveyed to the position set on the jig 34-2, the jig 34-1 is moved upward, and the loading device 33 takes out the substrate 42 and loads it on the carrier 12. It

FIG. 8 is a diagram showing another configuration example of the chemical liquid tank 3 and the reaction tank 4. In the configuration example shown in FIG. 7, the reaction tank 4 is entirely immersed in the chemical liquid tank 3 (closed type).
However, in the configuration example shown in FIG.
A part of it is configured to be exposed outside the chemical solution tank 3 (open type). In the configuration example shown in FIG.
Is configured so that the horizontal jig 34 is changed to the vertical jig and is inserted (installed) into the reaction tank 4.

In the case of the sealed type as shown in FIG. 7, FIG.
As shown in (A), the bubbles (hydrogen) 81 generated when the anodization treatment is performed in the reaction tank 4 move upward from the silicon 51, but the open type as shown in FIG. In this case, as shown in FIG. 9B, the bubble 81 moves upward along the silicon 51.

In the case of the open type, the bubbles 81 are made of silicon 51.
It is possible that the silicon 51 is damaged by the bubbles 81 because it moves upward along the top, but in the case of the closed type,
The bubbles 81 can prevent the silicon 51 from being scratched. However, in the case of the open type, the jig 3
4 can be replaced by changing the size of silicon 51
Can be subjected to anodization treatment in the reaction tank 4, but in the case of the sealed type, the size of the jig 34 is set to the silicon 51
Will be limited in size.

Whether an open type or a closed type is used as the reaction tank 4 may be designed so as to use the one suitable for the purpose.

As described above, the formation of the watermark can be prevented by carrying the substrate (carrier) in the chemical solution, and by providing the filter and the like to remove particles and contamination. it can.

Next, a case where porous silicon is produced in the system for executing the anodization treatment of the configuration example shown in FIG. 1 will be described. A silicon substrate is used as the substrate 41. As the silicon substrate, for example, single crystal silicon doped with P-type impurities such as boron is used. Here, a silicon substrate is used as the semiconductor substrate,
The case of forming porous silicon will be described as an example. As the semiconductor substrate, in addition to silicon, germanium, a compound of gallium and arsenic, a compound of gallium and phosphorus, a compound of gallium and nitrogen, a compound of gallium and iridium It is needless to say that a compound of silicon and germanium or the like can be used, and the present invention can be applied to the case where those compounds are used.

The carrier 11 was loaded with fifteen silicon substrates. The carrier 11 was first installed on the carrier installation table 1 (FIG. 1). The carrier 11 installed on the carrier installation table 11 was conveyed to the pure water tank 2-1 (FIG. 2). The silicon substrate (carrier 11) cleaned in each of the pure water tank 2-1 to the chemical liquid tank 2-6 is
Although it is conveyed to the chemical liquid tank 3, the gate valve 31 is provided between the chemical liquid tank 2-6 and the chemical liquid tank 3, so that the gate valve 31 was opened first. And in the chemical solution,
The carrier 11 was transported from the chemical liquid tank 2-6 to the chemical liquid tank 3 by the transport device 32.

The chemical solution filled in the chemical solution tank 2-6, the chemical solution tank 3, the reaction tank 4, and the chemical solution tank 5 was a mixture of hydrofluoric acid having a concentration of 50% and ethanol at a ratio of 1: 1. It was a mixed liquid.

When the carrier 11 is transferred to the chemical bath 3,
The gate valve 31 was closed. One of the 15 silicon substrates loaded in the carrier 11 was set on the jig 34 by the loading device 33. Then, the jig 34
Was transferred to the reaction tank 4 by the transfer device 35 and installed at a predetermined position. Then, a current was passed between the Pt electrode 71-1 and the Pt electrode 71-2. The current density applied to the anodization treatment was 7 mA / cm ² . The current having the current density was applied for about 30 minutes.

After that, the jig 34 is transferred from the reaction tank 4 to the chemical solution tank 3, and the silicon substrate (porous silicon produced by anodizing treatment) loaded in the jig 34 is The carrier 12 was loaded by the loading device 33. In this state, the carrier 11 is loaded with 14 untreated silicon substrates, and the carrier 12 is loaded with one porous silicon produced by the treatment. It was in a state of being.

The 14 silicon substrates loaded in the carrier 11 were subjected to the treatment in the reaction tank 4 as described above, whereby 15 porous silicons were loaded in the carrier 12. When the fifteenth porous silicon is loaded into the carrier 12, the gate valve 37
The carrier 12 was opened, and the carrier 12 was transferred to the chemical liquid tank 5 by the transfer device 36. After that, the gate valve 37 was closed.

The carrier 12 includes the chemical solution tank 5 to the pure water tank 6
(FIG. 1). Ultrasonic cleaning was performed in the pure water tank 6. After ultrasonic cleaning, the carrier 12 was conveyed to the rotary dryer 7. The porous silicon (carrier 12) dried by the rotary drying device 7 was conveyed to the carrier setting table 8.

With such a process, the porosity is about 28%.
Thus, the desired porous silicon having a film thickness of 24 micrometers and good crystallinity was produced without forming a watermark or the like in the subsequent processing (e.g., epitaxial growth).

Next, a case of producing porous silicon in the system shown in FIG. 2 will be described. The processing performed in each tank from the carrier installation base 1 to the chemical liquid tank 5 is the same as the processing in the system shown in FIG. 1 described above, and therefore description thereof will be omitted.

A plurality of carriers 12, for example, four carriers 12 in this case, can be stored in the chemical liquid tank 21. Until the four carriers 12 are stored in the chemical solution tank 21, the carrier installation table 1 to the chemical solution tank 5 are stored.
The above process was repeated in sequence. When the four carriers 12 are stored in the chemical liquid tank 21, the four carriers 1
2 was conveyed to the IPA drying device 22 and dried using IPA. When the drying by the IPA drying device 22 is completed, the carrier 12 is transported to the carrier setting eighth.

With such a process, the porosity is about 28%.
Thus, the desired porous silicon having a film thickness of 24 micrometers and good crystallinity was produced without forming a watermark or the like in the subsequent processing (e.g., epitaxial growth).

In the above-described embodiments, the case of applying to an apparatus for processing anodization has been described as an example, but by changing the chemical (chemical solution) or the processing method, for example, plating processing or substrate cleaning can be performed. It can also be applied to other means (apparatus) such as a process.

In the present specification, the system represents the entire apparatus composed of a plurality of devices.

[0068]

As described above, according to the substrate processing apparatus to which the present invention is applied or the manufacturing apparatus for manufacturing the semiconductor device using the substrate processed by the substrate processing apparatus, the substrate is anodized in the chemical solution. A treatment tank in which a chemical solution is loaded into the anodizing bath, a holding means for holding a substrate processed or treated in the anodizing bath, and a transporting means for transporting the treated or processed substrate in the anodizing bath. Since it is provided inside, it is possible to prevent the formation of watermarks and the like without exposing the substrate to the atmosphere.

The present invention can be applied to an apparatus for treating anodization, but by changing the chemicals and the treatment method, it can be applied to other means (apparatus) such as a plating treatment or a substrate cleaning step. Can also be applied.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of an embodiment of a system for performing anodization treatment to which the present invention is applied.

FIG. 2 is a diagram showing the configuration of another embodiment of a system for performing anodization treatment to which the present invention is applied.

FIG. 3 is a diagram showing a configuration example of a cleaning tank 2.

FIG. 4 is a diagram showing an internal configuration example of a chemical liquid tank 3.

FIG. 5 is a diagram illustrating a watermark.

FIG. 6 is a diagram illustrating a configuration example of a system including a filter.

FIG. 7 is a diagram showing an internal configuration example of a chemical liquid tank 3 and a reaction tank 4.

FIG. 8 is a diagram showing another internal configuration example of the chemical liquid tank 3 and the reaction tank 4.

FIG. 9 is a diagram illustrating bubbles that are generated.

[Explanation of symbols]

1 carrier installation table, 2 cleaning tanks, 3 chemical solution tanks,
4 reaction tanks, 5 chemical liquid tanks, 6 pure water tanks, 7 rotary dryers, 8 carrier installation stands, 11, 12 carriers, 21 chemical liquid tanks, 22 IPA dryers, 3
1 gate valve, 32 transfer device, 33 loading device, 34 jig, 35, 36 transfer device, 37
Gate valve, 41, 42 substrate, 61 filter, 62 pump, 63 tank

Claims (7)

[Claims] 1. An anodizing bath for anodizing a substrate in a chemical solution, a holding means for holding the substrate that has been or has been treated in the anodizing bath, and the anodizing bath. Alternatively, the substrate processing apparatus is provided with a transfer means for transferring the processed substrate in a processing tank in which the chemical solution is loaded. 2. A cleaning tank, which is loaded with the chemical solution to clean the substrate, and a storage tank, which is loaded with the chemical solution and stores a holding means, wherein the cleaning tank and the storage tank have the substrate with the chemical solution. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is connected to each of the processing tanks so as to be transported inside. 3. The substrate processing apparatus according to claim 1, wherein the anodizing bath is a sealed type in which all parts are provided in the chemical solution. 4. The substrate processing apparatus according to claim 1, wherein the anodizing bath is an open type, a part of which is provided outside the chemical solution. 5. The method according to claim 1, further comprising at least one of a bubble removing means for removing bubbles contained in the chemical solution and a particle removing means for removing particles contained in the chemical solution. Substrate processing equipment. 6. The substrate processing apparatus according to claim 1, further comprising a circulation unit that circulates the chemical liquid. 7. A step of forming a porous layer by making the surface of a substrate porous, a step of forming a semiconductor layer on the substrate via the porous layer, and a step of forming a porous layer for the semiconductor layer. Separating the substrate from the substrate, the step of forming the porous layer, the anodizing tank for anodizing the substrate in the chemical solution, treated or treated in the anodizing tank A semiconductor device characterized in that holding means for holding a substrate and carrying means for carrying the treated or treated substrate to the anodizing bath are carried out in a treatment tank provided in the chemical solution. Manufacturing equipment.