JP2003253497A - Method for effectively conserving supply source of metal ion in plating equipment - Google Patents
Method for effectively conserving supply source of metal ion in plating equipmentInfo
- Publication number
- JP2003253497A JP2003253497A JP2002044679A JP2002044679A JP2003253497A JP 2003253497 A JP2003253497 A JP 2003253497A JP 2002044679 A JP2002044679 A JP 2002044679A JP 2002044679 A JP2002044679 A JP 2002044679A JP 2003253497 A JP2003253497 A JP 2003253497A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- tank
- liquid
- storage tank
- metal ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 147
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims 7
- 239000010949 copper Substances 0.000 claims abstract description 50
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 45
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 230000004075 alteration Effects 0.000 claims description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 description 10
- 239000000654 additive Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- -1 iron ion Chemical class 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
- LUENVHHLGFLMFJ-UHFFFAOYSA-N 4-[(4-sulfophenyl)disulfanyl]benzenesulfonic acid Chemical compound C1=CC(S(=O)(=O)O)=CC=C1SSC1=CC=C(S(O)(=O)=O)C=C1 LUENVHHLGFLMFJ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は例えば銅メッキ装置
における銅供給源の有効な保存に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to effective storage of a copper source in, for example, a copper plating apparatus.
【０００２】[0002]
【従来の技術】従来より、電気メッキにおいて操作停止
中にあっても、メッキ反応を促進しメッキに光沢性をも
たらすための添加剤たるブライトナー、例えば4,5-ジチ
アオクタン-1,8-ジスルホン酸［(SCH２CH２CH２SO３H)
２］が銅アノード存在下で分解することが一般に知られ
ている（例えばJ. Electroanal. Chem., 338(1992), 16
7〜177）。2. Description of the Related Art Conventionally, a brightener, such as 4,5-dithiaoctane-1,8-disulfone, which is an additive for promoting a plating reaction to bring glossiness to plating even when operation is stopped in electroplating, Acid [(SCH 2 CH 2 CH 2 SO 3 H)
2 ] is decomposed in the presence of a copper anode (for example, J. Electroanal. Chem., 338 (1992), 16).
7-177).
【０００３】またA.Thies, H.Meyer, J.Helneder, M.Sc
hwerd and T.Gebhart、Advanced Metallization Confer
ence（1999）、６９〜７５頁でも言及されるように銅メ
ッキに際して不溶解性アノードを用いる場合、銅イオン
供給のために銅溶解槽を付加的にメッキ装置に備えるよ
うになっている。この銅溶解槽は、銅ボールを入れ、カ
ソード反応である基板上の銅析出量に対応させて銅イオ
ンを当該銅ボールから溶解させるためのものである。こ
こでカソード反応は
Cu２＋＋２ｅ− → Cu０………（１）
またアノード反応は
Fe２＋ → Fe３＋＋ｅ−………（２）
である。また、銅溶解槽での銅イオンの補給は次の反応
によって行われる。
Cu０＋２Fe３＋ → Cu２＋＋２Fe２＋……（３）A. Thies, H. Meyer, J. Helneder, M. Sc
hwerd and T. Gebhart, Advanced Metallization Confer
ence (1999), pp. 69-75, when an insoluble anode is used for copper plating, a copper dissolution bath is additionally provided in the plating apparatus for supplying copper ions. This copper dissolution tank is for putting copper balls and dissolving copper ions from the copper balls in accordance with the amount of copper deposition on the substrate which is a cathode reaction. Here, the cathode reaction is Cu 2+ + 2e − → Cu 0 (1) and the anode reaction is Fe 2+ → Fe 3+ + e − (2). Further, the replenishment of copper ions in the copper dissolution tank is performed by the following reaction. Cu 0 + 2Fe 3+ → Cu 2+ + 2Fe 2+ (3)
【０００４】[0004]
【発明が解決しようとする課題】通常、このような不溶
解性アノードを用いたシステムにおける銅溶解槽からの
銅イオンは、収容した銅ボールから補給される。しかし
ながら、実際の銅溶解槽においては、銅ボールが存在す
るため、上記の最初の文献（J. Electroanal. Chem.）
に述べられているとおり、メッキ装置を停止中でもブラ
イトナーが分解する可能性がある。そのため、メッキ装
置を再稼動させた場合に、この銅溶解槽内の液がメッキ
反応槽に流入し、メッキ装置停止前と同条件のメッキを
行うことができなくなるという問題がある。Normally, the copper ions from the copper dissolution bath in a system using such an insoluble anode are replenished from the contained copper balls. However, since copper balls are present in an actual copper dissolution tank, the above first document (J. Electroanal. Chem.)
As described in, the brightener may be decomposed even when the plating apparatus is stopped. Therefore, when the plating apparatus is restarted, there is a problem that the liquid in the copper dissolution tank flows into the plating reaction tank and plating under the same conditions as before the plating apparatus is stopped cannot be performed.
【０００５】同様の現象は、溶解性アノードを用いたシ
ステムでも生じ、メッキ装置をいったん停止後に再稼動
して運転する場合、装置停止前のメッキ性能を得ること
が困難になることが指摘されている（J. Electroanal.
Chem., 338(1992), 167〜177）。またメッキ装置停止期
間中に生成する分解物が不純物としてメッキ面に悪影響
も及ぼす。It has been pointed out that the same phenomenon occurs in a system using a soluble anode, and when the plating apparatus is once stopped and then restarted, it is difficult to obtain the plating performance before the apparatus is stopped. (J. Electroanal.
Chem., 338 (1992), 167-177). In addition, the decomposition products generated during the period when the plating apparatus is stopped adversely affect the plating surface as impurities.
【０００６】そこで本発明は、メッキ装置の運転中断が
あってもメッキ液を変質させず、メッキ性能を変化させ
ないことを課題とする。[0006] Therefore, an object of the present invention is not to change the quality of the plating solution even if the operation of the plating apparatus is interrupted and to not change the plating performance.
【０００７】[0007]
【課題を解決するための手段】上記課題は、本発明によ
れば、金属イオン供給源に変質を生じさせない溶液を置
換用液として収容する貯留槽を付設し、メッキ作業停止
中に、メッキ液の少なくとも一部を上記置換用液と置き
換えることによって解決される。According to the present invention, the above object is to provide a storage tank for accommodating a solution that does not cause alteration in a metal ion supply source as a replacement liquid, and to provide a plating solution while the plating operation is stopped. It is solved by replacing at least a part of the replacement liquid with the replacement liquid.
【０００８】不溶解性アノードを有したメッキ設備の場
合、金属イオン供給源を含有した槽に上記貯留槽を付設
し、メッキ作業終了後に、金属イオン供給源含有槽から
メッキ液をすべて排出し、空になった金属イオン供給源
含有槽へ貯留槽から置換用液を移し、メッキ作業再開時
に置換用液を貯留槽へ戻し、しかる後にメッキ液を金属
イオン供給源含有槽へ戻すようにする。In the case of a plating facility having an insoluble anode, the above-mentioned storage tank is attached to a tank containing a metal ion supply source, and after the plating operation is completed, all the plating solution is discharged from the metal ion supply source containing tank, The replacement liquid is transferred from the storage tank to the empty metal ion supply source containing tank, the replacement liquid is returned to the storage tank when the plating operation is restarted, and then the plating solution is returned to the metal ion supply source containing tank.
【０００９】溶解性アノードを有したメッキ設備の場
合、メッキ槽に上記貯留槽とメッキ液保存槽とをそれぞ
れ付設し、メッキ作業終了時に、メッキ液保存槽へメッ
キ槽からメッキ液を移し、空になったメッキ槽へ貯留槽
から置換用液を移し、メッキ作業再開時に置換用液を貯
留槽へ戻し、しかる後にメッキ液をメッキ槽へ戻すよう
にする。In the case of a plating facility having a soluble anode, the above-mentioned storage tank and plating solution storage tank are attached to the plating tank, and at the end of the plating operation, the plating solution is transferred from the plating tank to the plating solution storage tank, The replacement liquid is transferred from the storage tank to the above-mentioned plating tank, the replacement liquid is returned to the storage tank when the plating operation is restarted, and then the plating liquid is returned to the plating tank.
【００１０】上記置換用液が、メッキ作業停止中に分解
反応を起こし得るブライトナーを含有しないメッキ液で
あれば、好適である。メッキが銅メッキである場合、上
記ブライトナーとしては、3-(ベンゾチアゾリル-2-チ
オ)プロピルスルホン酸及びそのナトリウム塩、3-メル
カプトプロパン-1-スルホン酸及びそのナトリウム塩、
エチレンジチオジプロピルスルホン酸及びそのナトリウ
ム塩、ビス-(p-スルホフェニル)-ジスルファイド及びそ
の２ナトリウム塩などを挙げることができる。メッキが
銅メッキである場合、置換用液を具体的には硫酸銅及び
硫酸を含む溶液、硫酸銅、硫酸及び塩素を含む溶液、さ
らには硫酸溶液とすることができる。It is preferable that the replacement liquid is a plating liquid that does not contain a brightener that can cause a decomposition reaction while the plating operation is stopped. When the plating is copper plating, as the brightener, 3- (benzothiazolyl-2-thio) propylsulfonic acid and its sodium salt, 3-mercaptopropane-1-sulfonic acid and its sodium salt,
Examples thereof include ethylenedithiodipropylsulfonic acid and its sodium salt, bis- (p-sulfophenyl) -disulfide and its disodium salt, and the like. When the plating is copper plating, the replacement liquid may be specifically a solution containing copper sulfate and sulfuric acid, a solution containing copper sulfate, sulfuric acid and chlorine, or a sulfuric acid solution.
【００１１】[0011]
【発明の実施の形態】以下、本発明を例示的な実施態様
において詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail in the exemplary embodiments.
【００１２】（例１）本発明を、不溶解性アノードを用
いたメッキ装置に適用した場合の構成を図１に示す。メ
ッキ装置本体であるメッキ槽（図示せず）に付設された
銅溶解槽４には、銅ボール５が充填されており、銅溶解
槽４と不図示のメッキ槽とは配管２，３を介して連結さ
れていて、それぞれに銅メッキ液が満たされている。銅
メッキ液の組成は、例えば銅イオン濃度３５ｇ／リット
ル、硫酸濃度１８０ｇ／リットル、鉄イオン濃度１２ｇ
／リットル、塩素イオン濃度５０ｍｇ／リットルであ
り、ブライトナー、レベラーなどと称される添加剤も含
有している。当該銅メッキ液を、置換用メッキ液と区別
するため、以下「実用メッキ液」と表現する。(Example 1) FIG. 1 shows the configuration when the present invention is applied to a plating apparatus using an insoluble anode. A copper melting tank 4 attached to a plating tank (not shown) that is the main body of the plating apparatus is filled with copper balls 5, and the copper melting tank 4 and a plating tank (not shown) are connected via pipes 2 and 3. Are connected together, and each is filled with copper plating solution. The composition of the copper plating solution is, for example, copper ion concentration 35 g / liter, sulfuric acid concentration 180 g / liter, iron ion concentration 12 g
/ L, chlorine ion concentration is 50 mg / L, and it also contains additives called brighteners, levelers and the like. In order to distinguish the copper plating solution from the replacement plating solution, the copper plating solution is hereinafter referred to as "practical plating solution".
【００１３】銅溶解槽４の他に、更に置換用液貯留槽７
が設けられており、これら両槽はポンプ６を備えた配管
でつながれている。ポンプ６は正逆転可能な構造を有し
ている。置換用液貯留槽７には、置換用メッキ液が収容
されている。置換用メッキ液はブライトナーのような添
加剤を含有していない液（メッキベース液）である。た
だし銅ボールによって分解を起こさない物質や銅表面の
変質を生じさせない物質であれば、そのような物質でな
る添加剤は置換用メッキ液に含まれていてもよい。添加
剤を含有しないメッキベース液を用いる場合、銅表面へ
の添加剤の吸着を少なくでき、メッキを再開した際に銅
表面からのメッキ液への放出を抑制することが期待でき
る。また置換用液として、ブライトナーの他に更に鉄イ
オンを含まないようなメッキ液を用いたり、硫酸銅を含
まないよう、実用メッキ液中の硫酸濃度と同程度の濃度
を有した硫酸溶液を用いることも可能である。In addition to the copper dissolution tank 4, a replacement liquid storage tank 7
Are provided, and these tanks are connected by a pipe equipped with a pump 6. The pump 6 has a structure capable of forward and reverse rotation. The replacement liquid storage tank 7 contains a replacement plating liquid. The replacement plating solution is a solution (plating base solution) containing no additive such as brightener. However, as long as it is a substance that is not decomposed by the copper balls or a substance that does not change the quality of the copper surface, an additive made of such a substance may be contained in the displacement plating solution. When a plating base solution containing no additive is used, the adsorption of the additive on the copper surface can be reduced, and it can be expected that when the plating is restarted, the release of the additive from the copper surface to the plating solution is suppressed. In addition to the brightener, a plating solution that does not further contain iron ions is used as the replacement solution, or a sulfuric acid solution that has a concentration similar to the sulfuric acid concentration in the practical plating solution so that copper sulfate is not included. It is also possible to use.
【００１４】メッキ装置を稼動させる場合には、配管
２，３におけるバルブ１５，１６を開き、実用メッキ液
をメッキ槽と銅溶解槽４の間で循環する。その際、ポン
プ６は停止しておき、貯留槽７内の置換用メッキ液を銅
溶解槽４へ移動しないようにしている。When operating the plating apparatus, the valves 15 and 16 in the pipes 2 and 3 are opened, and a practical plating solution is circulated between the plating tank and the copper dissolving tank 4. At that time, the pump 6 is stopped so that the substitution plating liquid in the storage tank 7 is not moved to the copper dissolution tank 4.
【００１５】メッキ作業を終了して装置を停止する際、
配管２，３におけるバルブ１５，１６を閉じ、銅溶解槽
４中の実用メッキ液を、配管１を介してメッキ槽若しく
は別のタンクへ排出し、銅溶解槽４内をいったん銅ボー
ルのみとする。しかる後、実用メッキ液を排出した銅溶
解槽４へ、ポンプ６を稼動して置換用メッキ液を導入す
る。このように置換用メッキ液を導入するのは、銅ボー
ル表面の乾燥、酸化等の表面状態の変化を防いで、メッ
キ再開時の特性を安定させるためである。When the plating operation is finished and the apparatus is stopped,
The valves 15 and 16 in the pipes 2 and 3 are closed, and the practical plating solution in the copper dissolution bath 4 is discharged to the plating bath or another tank via the pipe 1 so that the copper dissolution bath 4 is temporarily made of only copper balls. . Thereafter, the pump 6 is operated to introduce the replacement plating solution into the copper dissolving tank 4 from which the practical plating solution has been discharged. The reason why the plating solution for substitution is introduced is to prevent changes in the surface condition such as drying and oxidation of the surface of the copper ball and to stabilize the characteristics when the plating is restarted.
【００１６】メッキ装置を再び稼働させるときには、銅
溶解槽４中の置換用メッキ液を貯留槽７に排出して銅溶
解槽を銅ボールのみとした後、バルブ１５、１６を開け
て配管３を介してメッキ槽より実用メッキ液を導入し
て、メッキ作業を開始する。When the plating apparatus is operated again, the plating solution for substitution in the copper dissolving tank 4 is discharged to the storage tank 7 and only the copper balls are used as the copper dissolving tank, and then the valves 15 and 16 are opened to connect the pipe 3 to the pipe 3. A practical plating solution is introduced from the plating tank to start plating work.
【００１７】（例２）溶解性アノードを用いたメッキ装
置に本発明を適用した場合の構成を図２に示す。カソー
ド（基板）１１と溶解性アノード（含リン銅アノード）
１２を備えたメッキ槽１０と、置換用液貯留槽１４と、
不図示のメッキ液保存タンクとを基本構成としている。
メッキ槽１０と置換用液貯留槽１４とはポンプ１３を備
えた配管でつながれており、メッキ槽１０と保存タンク
とは配管１５を介して連結可能となっている。ポンプ１
３も正逆転可能な構造を有している。メッキ槽１０に満
たされた銅メッキ液の組成は、例１のものから鉄イオン
を除いたものであり、添加剤の含有も同様である。カソ
ード１１の基板としてはプリント基板や半導体ウエハな
どを挙げることができるが、特に限定されるものではな
い。(Example 2) FIG. 2 shows the configuration when the present invention is applied to a plating apparatus using a soluble anode. Cathode (substrate) 11 and soluble anode (phosphorus-containing copper anode)
A plating tank 10 provided with 12, and a replacement liquid storage tank 14,
A plating solution storage tank (not shown) is used as a basic configuration.
The plating tank 10 and the replacement liquid storage tank 14 are connected by a pipe equipped with a pump 13, and the plating tank 10 and the storage tank can be connected via a pipe 15. Pump 1
3 also has a structure capable of normal and reverse rotation. The composition of the copper plating solution with which the plating tank 10 was filled was the same as that of Example 1 except that iron ions were removed, and the content of additives was also the same. The substrate of the cathode 11 may be a printed circuit board, a semiconductor wafer or the like, but is not particularly limited.
【００１８】メッキ装置を稼動させる場合、ポンプ１３
は停止しておき、貯留槽１４内の置換用メッキベース液
をメッキ槽１０へ移動しないようにする。メッキ作業を
終了して装置を停止する際、メッキ槽１０内の実用銅メ
ッキ液を、配管１５を介して保存タンクへ排出し、メッ
キ槽１０内をいったん空とする。そして、実用メッキ液
を排出したメッキ槽１０へ、ポンプ１３を稼動して置換
用メッキベース液を導入する。このように置換用メッキ
ベース液を導入することで、アノード表面に形成された
ブラックフィルムの乾燥等の表面状態変化を防ぐことが
でき、メッキ再開時の特性を安定化できる。When operating the plating apparatus, the pump 13
Is stopped so that the plating base liquid for substitution in the storage tank 14 is not moved to the plating tank 10. When the plating operation is finished and the apparatus is stopped, the practical copper plating solution in the plating tank 10 is discharged to the storage tank through the pipe 15 to empty the plating tank 10 once. Then, the pump 13 is operated to introduce the plating base liquid for replacement into the plating tank 10 from which the practical plating liquid has been discharged. By introducing the replacement plating base liquid in this way, it is possible to prevent the surface condition of the black film formed on the anode surface from changing, such as drying, and stabilize the characteristics when the plating is restarted.
【００１９】メッキ装置を再び稼動させるときには、メ
ッキ槽１０内の置換用メッキベース液を貯留槽１４に排
出してメッキ槽１０を空とした後、配管１を介して保存
タンクより実用メッキ液を導入して、メッキ作業を開始
する。When the plating apparatus is operated again, the plating base solution for substitution in the plating tank 10 is discharged to the storage tank 14 to empty the plating tank 10, and then the practical plating solution is supplied from the storage tank via the pipe 1. Introduce and start plating work.
【００２０】なお上記二例とも、メッキ対象物として
は、プリント基板、半導体ウエハなど限定されるもので
はない。In both of the above examples, the object to be plated is not limited to a printed circuit board, a semiconductor wafer or the like.
【００２１】[0021]
【発明の効果】本発明によれば、金属イオン供給源に変
質を生じさせない溶液を置換用液として収容する貯留槽
を付設し、メッキ作業停止中に、メッキ液の少なくとも
一部を上記置換用液と置き換えるので、メッキ作業を中
断しても中断前後でメッキ性能に変化を生じないように
することができる。According to the present invention, a storage tank for accommodating a solution that does not cause alteration in the metal ion supply source is provided as a replacement liquid, and at least a part of the plating liquid is used for the replacement while the plating operation is stopped. Since the liquid is replaced with the liquid, it is possible to prevent the plating performance from changing before and after the interruption even if the plating operation is interrupted.
【００２２】不溶解性アノードを有したメッキ設備の場
合、金属イオン供給源を含有した槽に貯留槽を付設し、
また溶解性アノードを有したメッキ設備の場合、メッキ
槽に貯留槽とメッキ液保存槽とをそれぞれ付設すること
で、メッキ作業停止中に、金属イオン供給源であるアノ
ードなどの表面を変質させず、またメッキ液に含有され
たブライトナーが分解することでメッキ特性が変わる事
態を回避することができる。In the case of plating equipment having an insoluble anode, a storage tank is attached to the tank containing the metal ion source,
Further, in the case of a plating facility having a soluble anode, by attaching a storage tank and a plating solution storage tank to the plating tank respectively, the surface of the anode, which is a metal ion supply source, etc. will not be altered while the plating operation is stopped. Moreover, it is possible to avoid a situation in which the plating characteristics are changed due to the decomposition of the brightener contained in the plating solution.
【図１】不溶解性アノードを用いたメッキ装置に本発明
を適用する場合の主要構成部分を示す概略図である。FIG. 1 is a schematic diagram showing main components when the present invention is applied to a plating apparatus using an insoluble anode.
【図２】溶解性アノードを用いたメッキ装置に本発明を
適用する場合の主要構成部分を示す概略図である。FIG. 2 is a schematic diagram showing main components when the present invention is applied to a plating apparatus using a soluble anode.
４ 銅溶解槽 ５ 銅ボール ６、１３ 正逆転可能なポンプ ７、１４ 置換用液貯留槽 １０ メッキ槽 １１ カソード １２ アノード 4 Copper melting tank 5 copper balls 6,13 Pumps that can be rotated in the forward and reverse directions 7, 14 Replacement liquid storage tank 10 plating tank 11 cathode 12 Anode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 齊藤 正 神奈川県横浜市緑区白山１丁目18番２号ジ ャーマン・インダストリー・センター ア トテック ジャパン株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Tadashi Saito 1-18-2 Hakusan, Midori-ku, Yokohama-shi, Kanagawa Yarman Industry Center Totec Japan Co., Ltd.
Claims (6)
溶液を置換用液として収容する貯留槽を付設し、メッキ
作業停止中に、メッキ液の少なくとも一部を上記置換用
液と置き換えることを特徴とする、メッキ設備における
金属イオン供給源の有効保存方法。1. A metal ion supply source is provided with a storage tank for accommodating a solution that does not cause alteration as a replacement liquid, and at least a part of the plating liquid is replaced with the replacement liquid while the plating operation is stopped. The effective storage method of the metal ion supply source in the plating equipment.
して、金属イオン供給源を含有した槽に上記貯留槽を付
設し、メッキ作業終了後に、金属イオン供給源含有槽か
らメッキ液をすべて排出し、空になった金属イオン供給
源含有槽へ貯留槽から置換用液を移し、メッキ作業再開
時に置換用液を貯留槽へ戻し、しかる後にメッキ液を金
属イオン供給源含有槽へ戻すことを特徴とする、請求項
１に記載の保存方法。2. A plating facility having an insoluble anode, wherein the storage tank is attached to a tank containing a metal ion supply source, and after the plating operation is completed, all the plating solution is discharged from the metal ion supply source containing tank. Then, transfer the replacement liquid from the storage tank to the empty tank containing the metal ion supply source, return the replacement liquid to the storage tank when the plating operation is restarted, and then return the plating solution to the tank containing the metal ion supply source. The storage method according to claim 1, wherein the storage method is a storage medium.
て、メッキ槽に上記貯留槽とメッキ液保存槽とをそれぞ
れ付設し、メッキ作業終了時に、メッキ液保存槽へメッ
キ槽からメッキ液を移し、空になったメッキ槽へ貯留槽
から置換用液を移し、メッキ作業再開時に置換用液を貯
留槽へ戻し、しかる後にメッキ液をメッキ槽へ戻すこと
を特徴とする、請求項１に記載の保存方法。3. A plating facility having a soluble anode, wherein the storage tank and the plating solution storage tank are attached to the plating tank, and when the plating operation is completed, the plating solution is transferred from the plating tank to the plating solution storage tank. 2. The replacement liquid is transferred from the storage tank to an empty plating tank, the replacement liquid is returned to the storage tank when the plating operation is restarted, and then the plating liquid is returned to the plating tank. How to save.
解反応を起こし得るブライトナーを含有しないメッキ液
であることを特徴とする請求項１〜３のいずれか一項に
記載の保存方法。4. The storage method according to claim 1, wherein the replacement liquid is a plating liquid that does not contain a brightener that can cause a decomposition reaction while the plating operation is stopped. .
とする請求項１〜４のいずれか一項に記載の保存方法。5. The storage method according to claim 1, wherein the plating is copper plating.
特徴とする請求項４に記載の保存方法。6. The storage method according to claim 4, wherein the replacement liquid is a sulfuric acid solution.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002044679A JP3725083B2 (en) | 2002-02-21 | 2002-02-21 | Method for enabling effective preservation of metal ion source in plating equipment |
| TW092103019A TWI263703B (en) | 2002-02-21 | 2003-02-13 | Method enabling effective storage of metal ion supply source in plating equipment |
| PCT/EP2003/001588 WO2003071010A1 (en) | 2002-02-21 | 2003-02-17 | Method for storage of a metal ion supply source in a plating equipment |
| KR1020047011656A KR100858503B1 (en) | 2002-02-21 | 2003-02-17 | Storage method of metal ion source in plating equipment |
| CA002473054A CA2473054A1 (en) | 2002-02-21 | 2003-02-17 | Method for storage of a metal ion supply source in a plating equipment |
| US10/502,557 US20050139477A1 (en) | 2002-02-21 | 2003-02-17 | Method for storage of a metal ion supply source in a plating equipment |
| AT03717186T ATE369446T1 (en) | 2002-02-21 | 2003-02-17 | METHOD FOR PREVENTING DEGRADATION OF A PLATING SOLUTION WHEN OPERATION OF PLATING EQUIPMENT IS INTERRUPTED |
| CN038042835A CN1636086B (en) | 2002-02-21 | 2003-02-17 | Method for storing a supply of metal ions in an electroplating apparatus |
| DE60315422T DE60315422T2 (en) | 2002-02-21 | 2003-02-17 | METHOD FOR PREVENTING WEATHERING OF A PLATING SOLUTION WHEN OPERATION OF THE PLATING EQUIPMENT IS INTERRUPTED |
| EP03717186A EP1476590B1 (en) | 2002-02-21 | 2003-02-17 | Method for preventing deterioration of a plating solution when the operation of the plating equipment is interrupted |
| MYPI20030580A MY132672A (en) | 2002-02-21 | 2003-02-19 | Method enabling effective storage of metal ion supply source in plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002044679A JP3725083B2 (en) | 2002-02-21 | 2002-02-21 | Method for enabling effective preservation of metal ion source in plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003253497A true JP2003253497A (en) | 2003-09-10 |
| JP3725083B2 JP3725083B2 (en) | 2005-12-07 |
Family
ID=27750561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002044679A Expired - Fee Related JP3725083B2 (en) | 2002-02-21 | 2002-02-21 | Method for enabling effective preservation of metal ion source in plating equipment |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20050139477A1 (en) |
| EP (1) | EP1476590B1 (en) |
| JP (1) | JP3725083B2 (en) |
| KR (1) | KR100858503B1 (en) |
| CN (1) | CN1636086B (en) |
| AT (1) | ATE369446T1 (en) |
| CA (1) | CA2473054A1 (en) |
| DE (1) | DE60315422T2 (en) |
| MY (1) | MY132672A (en) |
| TW (1) | TWI263703B (en) |
| WO (1) | WO2003071010A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11352710B2 (en) * | 2019-09-30 | 2022-06-07 | Abdurrahman Ildeniz | Leak free brush electroplating system |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4469546A (en) * | 1981-12-16 | 1984-09-04 | Cooper Tire & Rubber Company | Transfer ring for a tire building machine |
| US4469564A (en) * | 1982-08-11 | 1984-09-04 | At&T Bell Laboratories | Copper electroplating process |
| JPH0559598A (en) | 1991-08-30 | 1993-03-09 | Kawasaki Steel Corp | Method and device for supplying metal ion of zn-ni electroplating |
| DE4344387C2 (en) * | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Process for the electrolytic deposition of copper and arrangement for carrying out the process |
| WO1999054527A2 (en) * | 1998-04-21 | 1999-10-28 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
| TR200003368T2 (en) * | 1998-05-16 | 2001-04-20 | Blasberg Oberflachentechnik Gmbh | Process for copper coating of substrates |
| US6200436B1 (en) * | 1999-04-27 | 2001-03-13 | Advanced Micro Devices, Inc. | Recycling consistent plating system for electroplating |
| JP3523555B2 (en) * | 2000-02-28 | 2004-04-26 | 古河電気工業株式会社 | Plating equipment |
| TW501277B (en) * | 2000-03-29 | 2002-09-01 | Sanyo Electric Co | Plating device |
| US6575111B2 (en) * | 2001-05-01 | 2003-06-10 | Drillmar, Inc. | Method for tendering |
-
2002
- 2002-02-21 JP JP2002044679A patent/JP3725083B2/en not_active Expired - Fee Related
-
2003
- 2003-02-13 TW TW092103019A patent/TWI263703B/en not_active IP Right Cessation
- 2003-02-17 CA CA002473054A patent/CA2473054A1/en not_active Abandoned
- 2003-02-17 AT AT03717186T patent/ATE369446T1/en active
- 2003-02-17 US US10/502,557 patent/US20050139477A1/en not_active Abandoned
- 2003-02-17 DE DE60315422T patent/DE60315422T2/en not_active Expired - Lifetime
- 2003-02-17 WO PCT/EP2003/001588 patent/WO2003071010A1/en active IP Right Grant
- 2003-02-17 KR KR1020047011656A patent/KR100858503B1/en not_active Expired - Fee Related
- 2003-02-17 CN CN038042835A patent/CN1636086B/en not_active Expired - Fee Related
- 2003-02-17 EP EP03717186A patent/EP1476590B1/en not_active Expired - Lifetime
- 2003-02-19 MY MYPI20030580A patent/MY132672A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20050139477A1 (en) | 2005-06-30 |
| TWI263703B (en) | 2006-10-11 |
| CN1636086A (en) | 2005-07-06 |
| MY132672A (en) | 2007-10-31 |
| TW200303937A (en) | 2003-09-16 |
| WO2003071010A1 (en) | 2003-08-28 |
| KR100858503B1 (en) | 2008-09-12 |
| DE60315422D1 (en) | 2007-09-20 |
| ATE369446T1 (en) | 2007-08-15 |
| CN1636086B (en) | 2010-04-28 |
| EP1476590B1 (en) | 2007-08-08 |
| KR20040083096A (en) | 2004-09-30 |
| JP3725083B2 (en) | 2005-12-07 |
| DE60315422T2 (en) | 2008-04-30 |
| CA2473054A1 (en) | 2003-08-28 |
| EP1476590A1 (en) | 2004-11-17 |
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