JP2003218675A5 - - Google Patents

Claims (13)

A first terminal related to the input and output of the connected main current to the first power supply, a second terminal, a driving device for a semi conductor device having a control terminal, the conduction and interruption of the main current In the drive device that controls according to the input signal and suppresses the overvoltage surge that occurs when the main current is turned on and off,
An element that limits the current flowing to the control terminal when the overvoltage surge voltage is suppressed; an element that limits the current flowing to a circuit that discharges the voltage of the control terminal when the main semiconductor element is shut off; and the current in the drive circuit And a device for reducing loss generated in the semiconductor device.   2. The resistor according to claim 1, wherein the first resistor connected to the control terminal and the input signal connected to the second terminal or a voltage between the first terminal and the second terminal are selected. A first variable resistance means having a first resistance means for changing a value; a switch means for controlling conduction and interruption of a current flowing through the first resistance means by the input signal; and the first terminal. A current source for injecting a current into the first resistor via a second power supply that is lower in voltage than the first power supply when the voltage between the second terminal and the second terminal is equal to or higher than the first voltage; The driving device for a semiconductor element, wherein the first variable resistance means and the current source are connected to the control terminal by the first resistor.   The voltage between the first terminal and the second terminal connected to the first terminal in the current source according to claim 1, wherein the voltage between the first terminal and the second terminal reaches the first voltage value. A zener-type or avalanche-type first diode through which a current flows, a third resistor connected to the diode, and a second voltage that is lower than the first power supply by detecting the current in the first diode. A device for driving a semiconductor element, comprising: an element for injecting a current into the first resistor via a power source. 4. The first resistor according to claim 1, wherein a voltage between the first and second terminals of the main semiconductor element is larger than a voltage at a rated current in the conductive state. A device for driving a semiconductor element, characterized in that the resistance value of the means increases. 5. The semiconductor device according to claim 4, wherein the input signal generates a command for cutting off a main current of the main semiconductor element , and a resistance value of the first resistance means becomes high after a first time has elapsed. Device drive device.   4. The method according to claim 1, wherein the first resistance means includes a circuit for differentiating the control voltage and an element for determining the differential value, and the first value when the differential value becomes a constant value. A resistance driving means for the semiconductor element has a high resistance value. 7. The method according to claim 1, wherein the first variable resistance means includes a plurality of MOSFETs connected in parallel, and when the input signal generates a command to cut off a main current of the main semiconductor element. The semiconductor device driving device is characterized in that the MOSFET is turned into a conductive state and is in a low resistance state, and then at least one or more MOSFETs are cut off to become a high resistance. In any one of Claims 1-7, resistance value increases by the fall of the voltage of the said control terminal as said 1st resistor, The voltage of the said control terminal is made into 2nd below the threshold voltage of the said main semiconductor element . A drive device for a semiconductor element, comprising a first non-linear element having a function of maintaining a voltage.   9. The semiconductor element driving device according to claim 8, wherein the first non-linear element includes a second diode and a fourth resistor connected in series. Power conversion apparatus characterized by comprising a semi-conductor device that is driven by the drive unit of any of the semiconductor device according to claim 1-9. In the power conversion device in which the semiconductor element is driven by the driving device according to any one of claims 1 to 9, and the main circuit inductance between the main semiconductor element and the first power source is Ls.
When VB is a first power supply voltage, f is a power converter carrier frequency, and Ron (V) is an on-resistance of the main semiconductor device as a function of a withstand voltage of the element, the first voltage is expressed as follows: A power converter characterized by being set in the vicinity of a voltage V that satisfies Equation (1).
dRon (V) / dV = Ls × f / 2 × VB / (V−VB) ² (1) In a three-phase inverter type power converter in which a driving device for controlling a main semiconductor element related to input / output of a main current is integrated on a one-chip semiconductor substrate,
An output circuit portion for a control signal to the main semiconductor element of the driving device is formed in the peripheral portion of the integrated circuit, and the upper arm of the first phase, the upper arm of the second phase in the peripheral creeping direction of the integrated circuit, An external signal to the control circuit for controlling the inverter is provided in the order of the upper arm of the third phase, the lower arm of the third phase, the lower arm of the second phase, and the upper arm of the first phase. Is provided in a region other than between the regions of the upper arm of the first phase, the upper arm of the second phase, the upper arm of the third phase, and the lower arm of the third phase. A power converter. 13. An electric vehicle comprising the power conversion device according to claim 5, wherein the main semiconductor element is a MOSFET, and the semiconductor drive device of the power conversion device is integrated on one integrated circuit chip. Where V B is the first power supply voltage, f is the power converter carrier frequency, and Ron (V) is the on-resistance of the main semiconductor device as a function of the withstand voltage of the element, the upper limit is (1)
dRon (V) / dV = Ls × f / 2 × VB / (V−VB) ² (1)
An electric vehicle characterized in that the withstand voltage between the first and second terminals of the main semiconductor element is greater than and close to the first voltage.