JP2003213423A - Apparatus and method for manufacturing metal barrier film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a metal barrier film 26 which has excellent burying properties and improved in adhesion by suppressing diffusion of metal at high speed in a very thin state of the film. <P>SOLUTION: Cl<SB>2</SB>gas plasma is generated in a chamber 1 between a substrate 3 and a metal member 7, and the metal member 7 is etched by the Cl<SB>2</SB>gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber 1 in which the substrate 3 is accommodated, metal nitride is formed with the excited nitrogen to deposit the metal nitride on the substrate 3, and the metal component of the precursor is deposited on the metal nitride of the substrate after the metal nitride is deposited to manufacture the metal barrier film 26. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barrier metal film formed on the surface of a substrate in order to prevent the diffusion of the metal to the substrate and maintain the adhesion of the metal when forming a metal film on the surface of the substrate. The present invention relates to a film manufacturing apparatus and a film manufacturing method.

[0002]

2. Description of the Related Art In semiconductors to which electrical wiring is provided, copper has come to be used as a wiring material due to reduction of switching speed, transmission loss, and high density. When copper wiring is applied, a substrate having a recess for wiring on the surface is used to form a copper film on the surface including the recess by vapor deposition or plating.

When forming a copper film on the surface of a substrate, a barrier metal film (eg, tantalum, titanium, etc.) is previously formed on the surface of the substrate in order to prevent the diffusion of the copper to the substrate and maintain the adhesion of the copper. A nitride such as silicon) has been produced. When plating or the like is used, a copper shield layer is formed on the barrier metal film by a physical or chemical vapor deposition method and applied as an electrode. The barrier metal film is
The film is formed by a physical vapor deposition method such as a sputtering method.

[0004]

The recess for wiring formed on the surface of the substrate tends to be small, and the barrier metal film is required to be further thinned. However, since the barrier metal film is produced by using the sputtering method, its directionality is not uniform, so that in a small concave portion, the inlet portion of the concave portion is formed before the inside of the concave portion is formed, resulting in poor filling. There was a problem of becoming insufficient, and the damage was severe.

The present invention has been made in view of the above circumstances, and provides a barrier metal film production apparatus and a barrier metal film production method which are excellent in embedding property and can form a barrier metal film at a high speed in an extremely thin state. The purpose is to

[0006]

A barrier metal film forming apparatus of the present invention for achieving the above object comprises a chamber for accommodating a substrate and a member to be etched made of metal provided in the chamber at a position facing the substrate. And a raw material gas supply means for supplying a raw material gas containing halogen into the chamber between the substrate and the member to be etched, and a plasma of the inside of the chamber to generate a raw material gas plasma, so that the member to be etched is exposed to the source gas plasma. A plasma generating means for generating a precursor of a metal component and a source gas contained in the member to be etched by etching, an exciting means for exciting the nitrogen-containing gas containing nitrogen from the chamber, and an exciting means. The generation means for generating a metal nitride with the precursor by the excited raw material and the temperature on the substrate side are the temperatures on the generation means side. Remote lowered, characterized in that a control means for forming a metal nitride on the substrate.

The barrier metal film forming apparatus of the present invention for achieving the above object includes a chamber for accommodating a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a substrate. By a raw material gas supply means for supplying a raw material gas containing halogen into the chamber between the member to be etched and a plasma of the inside of the chamber to generate a raw material gas plasma and etching the member to be etched with the raw material gas plasma Plasma generating means for generating a precursor of a metal component and a raw material gas contained in the member to be etched, and an excitation means for exciting the nitrogen-containing gas containing nitrogen from the chamber in isolation.
The generating means for generating a metal nitride between the precursor and the precursor by the raw material excited by the exciting means, and the temperature of the substrate side is lower than the temperature of the generating means to form a metal nitride film on the substrate and Control means for stopping the nitrogen-containing gas after forming the film of the nitride and making the temperature of the substrate side lower than the temperature of the member to be etched to form the metal component of the precursor on the metal nitride of the substrate. It is characterized by having.

Further, the barrier metal film forming apparatus of the present invention for achieving the above object comprises a chamber for accommodating a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a substrate. Raw material gas supply means for supplying a raw material gas containing halogen into the chamber between the member to be etched and a nitrogen containing gas for supplying a nitrogen containing gas containing nitrogen into the chamber between the substrate and the member to be etched The supply means and the inside of the chamber are turned into plasma to generate a source gas and a nitrogen-containing gas plasma, and the member to be etched is etched by the source gas plasma to generate a precursor of a metal component contained in the member to be etched and the source gas. And the plasma generation means for generating metal nitride between the precursor and the substrate side temperature. Characterized by comprising a control means for forming a metal nitride on the substrate to be lower than the temperature of the ring member.

The barrier metal film forming apparatus of the present invention for achieving the above object includes a chamber for accommodating a substrate, a metal member to be etched provided in the chamber at a position facing the substrate, and the substrate. Raw material gas supply means for supplying a raw material gas containing halogen into the chamber between the member to be etched and a nitrogen containing gas for supplying a nitrogen containing gas containing nitrogen into the chamber between the substrate and the member to be etched The supply means and the inside of the chamber are turned into plasma to generate a source gas and a nitrogen-containing gas plasma, and the member to be etched is etched by the source gas plasma to generate a precursor of a metal component contained in the member to be etched and the source gas. And the plasma generation means for generating metal nitride between the precursor and the substrate side temperature. The temperature of the precursor member is lowered by lowering the temperature of the substrate to be lower than the temperature of the member to be etched by stopping the nitrogen-containing gas after depositing the metal nitride on the substrate at a temperature lower than that of the etching member side. And a control means for forming a film on the metal nitride.

Further, the plasma generating means is characterized by including a coil-shaped winding antenna arranged around the chamber. Further, the source gas containing halogen is characterized by being a source gas containing chlorine. Further, the nitrogen-containing gas containing nitrogen is a gas containing ammonia. Further, the member to be etched is characterized in that it is tantalum, tungsten, titanium or silicon which is a halide forming metal.

According to the method of forming a barrier metal film of the present invention for achieving the above object, a source gas containing halogen is supplied into a chamber between a substrate and a member to be etched made of metal, and a plasma is generated inside the chamber. To generate a precursor gas plasma and to etch the member to be etched with the source gas plasma to generate a precursor of a metal component and a source gas contained in the member to be etched,
The nitrogen-containing gas containing nitrogen is excited by being isolated from the chamber in which the substrate is housed, metal nitride is generated between the precursor and the precursor by the excited raw material, and the temperature of the substrate side is the temperature of the generating means side. It is characterized in that the metal nitride is deposited on the substrate at a lower temperature.

Further, according to the method of producing a barrier metal film of the present invention for achieving the above object, a source gas containing halogen is supplied into a chamber between a substrate and a member to be etched made of metal, and the inside of the chamber is supplied. To generate a precursor gas plasma to generate a precursor gas plasma and to etch the member to be etched by the source gas plasma to generate a precursor of a metal component and a source gas contained in the member to be etched, and the chamber in which the substrate is housed. A nitrogen-containing gas containing nitrogen is isolated and excited, a metal nitride is generated between the precursor and the precursor by the excited raw material, and the temperature on the substrate side is made lower than the temperature on the generation means side. Is deposited on the substrate, the metal nitride is deposited, the nitrogen-containing gas is stopped, and the temperature on the substrate side is set lower than the temperature on the etched member side to form the precursor metal. The characterized thereby deposited on the metal nitride substrates.

Further, according to the method of producing a barrier metal film of the present invention for achieving the above object, a source gas containing halogen and a nitrogen containing nitrogen are contained in a chamber between a substrate and a member to be etched made of metal. A precursor of a metal component and a source gas contained in the member to be etched is generated by supplying a gas to generate plasma in the chamber to generate a source gas and a nitrogen-containing gas plasma and etching the member to be etched with the source gas plasma. It is characterized in that a metal nitride is generated together with the precursor and the temperature on the substrate side is lower than the temperature on the member to be etched to form the metal nitride on the substrate.

Further, in the method for producing a barrier metal film of the present invention for achieving the above object, a source gas containing halogen and a nitrogen containing nitrogen are contained in a chamber between a substrate and a member to be etched made of metal. A precursor of a metal component and a source gas contained in the member to be etched is generated by supplying a gas to generate plasma in the chamber to generate a source gas and a nitrogen-containing gas plasma and etching the member to be etched with the source gas plasma. A metal nitride is formed between the precursor and the precursor, and the temperature of the substrate side is made lower than the temperature of the member to be etched to form the metal nitride film on the substrate. After that, the nitrogen-containing gas is stopped and the temperature of the substrate side is made lower than the temperature of the member to be etched to deposit the metal component of the precursor on the metal nitride of the substrate. And it features.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of a barrier metal film production apparatus and a barrier metal film production method of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic side view of a barrier metal film production apparatus according to a first embodiment of the present invention, and FIG. 2 shows details of a substrate on which a barrier metal film is produced.

As shown in the figure, a support base 2 is provided in the vicinity of the bottom of a chamber 1 (made of an insulating material) made of, for example, ceramics (made of an insulating material) and formed in a cylindrical shape. The substrate 3 is placed. The support base 2 is provided with a temperature control means 6 provided with a heater 4 and a coolant flow means 5, and the support base 2 has a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the temperature control means 6. ) Is controlled.

The upper surface of the chamber 1 is an opening, and the opening is closed with a metal member 7 (for example, W, Ti, Ta, TiSi, etc.) as a member to be etched made of metal. The inside of the chamber 1 closed by the metal member 7 is maintained at a predetermined pressure by the vacuum device 8. A plasma antenna 9 serving as a coil-shaped winding antenna of plasma generating means is provided around the cylindrical portion of the chamber 1, and a matching device 10 and a power supply 11 are connected to the plasma antenna 9 to supply power.

In the cylindrical portion of the chamber 1 below the metal member 7, a source gas containing chlorine as a halogen (He, Ar or the like having a chlorine concentration of ≦ 50%, preferably about 10%) is provided inside the chamber 1. A nozzle 12 for supplying diluted Cl ₂ gas) is connected. The nozzle 12 opens horizontally, and the raw material gas is sent to the nozzle 12 via a flow rate controller 13. As the halogen contained in the source gas, it is possible to apply fluorine (F), bromine (Br), iodine (I), or the like.

On the other hand, slit-shaped openings 1 are formed at a plurality of locations (for example, four locations) below the cylindrical portion of the chamber 1.
4 are formed, and one end of a cylindrical passage 15 is fixed to the opening 14. A tubular excitation chamber 16 made of an insulator is provided in the middle of the passage 15, and a coil-shaped plasma antenna 17 is provided around the excitation chamber 16. The plasma antenna 17 is connected to a matching unit 18 and a power supply 19. Then, the power is supplied. The plasma antenna 17, the matching box 18, and the power supply 19 constitute an exciting means. Passage 15
The flow rate controller 20 is connected to the other end side of the flow rate controller 2
Ammonia gas (NH ₃ gas) as a nitrogen-containing gas is supplied into the passage 15 through 0.

In the barrier metal film forming apparatus described above, the raw material gas is supplied from the nozzle 12 into the chamber 1, and the electromagnetic wave is introduced into the chamber 1 from the plasma antenna 9, whereby the Cl ₂ gas is ionized and Cl ₂ gas is ionized. ₂ Gas plasma (raw material gas plasma) 21 is generated. The Cl ₂ gas plasma 21 causes an etching reaction on the metal member 7,
A precursor (MxCly: M is a metal such as W, Ti, Ta, TiSi) 22 is generated.

Further, by supplying NH ₃ gas into the passage 15 via the flow controller 20 feeds the NH ₃ gas in the excitation chamber 16. When an electromagnetic wave enters the excitation chamber 16 from the plasma antenna 17, the NH ₃ gas is ionized and the NH ₃ gas plasma 23 is generated. Since a predetermined differential pressure is set between the pressure in the chamber 1 and the pressure in the excitation chamber 16 by the vacuum device 8, the excited ammonia of the NH ₃ gas plasma 23 in the excitation chamber 16 is precursor from the opening 14 in the chamber 1. It is sent to the body (MxCly) 22.

That is, the excitation means for exciting the nitrogen-containing gas containing nitrogen in the excitation chamber 16 isolated from the chamber 1 is constituted. As a result, the metal component of the precursor (MxCly) 22 reacts with ammonia to generate a metal nitride (MN) (generation means). At this time, the metal member 7 and the excitation chamber 16 are maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by the plasma.

The metal nitride (MN) produced inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is produced on the surface of the substrate 3. After the MN thin film 24 is generated, the NH ₃ gas and the power supply to the power source 19 are stopped, so that the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is lower than that of the metal member 7. The precursor (MxCly) 22 carried to the substrate 3 is reduced to only metal (M) ions and applied to the substrate 3, and an M thin film 25 is formed on the MN thin film 24 of the substrate 3. MN thin film 24 and M thin film 25
Thus, the barrier metal film 26 is formed (see FIG. 2).

The reaction when the MN thin film 24 is produced can be expressed by the following equation. 2MCl + 2NH ₃ → 2MN ↓ + HCl ↑ + 2H ₂ ↑ The reaction when the M thin film 25 is formed can be expressed by the following equation. 2MCl → 2M ↓ + Cl ₂ ↑ Gas and etching products not involved in the reaction are exhaust port 2
Exhausted from 7.

Although Cl ₂ gas diluted with He, Ar or the like has been described as an example of the raw material gas, Cl ₂ gas may be used alone or HCl gas may be applied. HCl
When gas is applied, HCl gas plasma is generated as the source gas plasma. Therefore, the source gas may be any gas containing chlorine, and a mixed gas of HCl gas and Cl ₂ gas can be used. The material of the metal member 7 is
Industrially applicable metals such as Ag, Au, Pt, and Si can be used.

Substrate 3 on which barrier metal film 26 is formed
A copper (Cu) thin film, an aluminum (Al) thin film, or the like is formed on the barrier metal film 26 by a film forming apparatus. The presence of the barrier metal film 26 prevents the diffusion of Cu into the substrate 3 by the MN thin film 24 and the M thin film 25, for example.
Cu adhesion is secured.

The barrier metal film 26 may be formed depending on the case where the material to be formed is a material having no problem in adhesion (for example, Al) or the nitride is a metal capable of maintaining adhesion.
It is also possible to omit the M thin film 25. Also,
Although the reduction reaction is caused by the temperature difference, it is also possible to separately generate the reducing gas plasma to cause the reduction reaction.

In the barrier metal film forming apparatus having the above structure,
Since the metal is generated by the plasma to form the barrier metal film 26, the barrier metal film 26 can be uniformly and thinly formed. Therefore, the substrate 3
For example, a barrier metal film 26 can be formed at high speed even in a small recess having a width of several hundreds nm, which is excellent in embedding property and can be formed in an extremely thin state at high speed. Become.

A barrier metal film production apparatus and a barrier metal film production method according to the second embodiment of the present invention will be described with reference to FIGS. 3 is a schematic side view of a barrier metal film forming apparatus according to a second embodiment of the present invention, FIG. 4 is a view taken along the line IV-IV in FIG. 3, and FIG. 5 is a view taken along the line VV in FIG. Is shown. The same members as those shown in FIG. 1 are designated by the same reference numerals, and duplicate description is omitted.

The upper surface of the chamber 1 is an opening, and the opening is closed by a disk-shaped ceiling plate 30 made of an insulating material (for example, ceramics). A metal (for example, W, Ti, Ta, Ti) is provided between the opening on the upper surface of the chamber 1 and the ceiling plate 30.
A member 31 to be etched such as Si) is sandwiched. The member to be etched 31 is provided with a ring portion 32 which is sandwiched by an opening on the upper surface of the chamber 1, and a protrusion having an equal width on the inner peripheral side of the ring portion 32 extending to the vicinity of the radial center of the chamber 1. A plurality of parts 33 are provided in the circumferential direction (12 in the illustrated example.
It is provided).

The protrusion 33 is attached to the ring portion 32 integrally or detachably. There is a notch 35 (space) formed between the protrusions 33 between the ceiling plate 30 and the inside of the chamber 1. The ring portion 32 is grounded, and the plurality of protrusions 33 are electrically connected to each other and maintained at the same potential.
The member to be etched 31 is provided with a temperature control means (not shown) such as a heater, and the temperature is controlled to, for example, about 200 ° C to 400 ° C.

It is also possible to dispose a second protrusion that is shorter than the protrusion 33 in the radial direction between the protrusions 33, and further, a shorter protrusion between the protrusion 33 and the second protrusion. It is also possible to arrange. In this way, the area of copper to be etched can be secured while suppressing the induced current.

Above the ceiling plate 30, a plane winding type plasma antenna 3 is provided for plasmaizing the inside of the chamber 1.
4 is provided, and the plasma antenna 34 is formed in a plane ring shape parallel to the surface of the ceiling plate 30. The matching device 10 and the power supply 11 are connected to the plasma antenna 34 to supply power. In the member to be etched 31, a plurality of protrusions 33 are provided in the circumferential direction on the inner peripheral side of the ring portion 32, and there are notches 35 (spaces) formed between the protrusions 33. The protrusion 3 is provided between the substrate 3 and the ceiling plate 30 in a discontinuous state with respect to the direction of electricity flow of 34.
3 has been arranged.

In the above-described barrier metal film forming apparatus, the source gas is supplied from the nozzle 12 into the chamber 1 and the electromagnetic wave is introduced into the chamber 1 from the plasma antenna 34, whereby the Cl ₂ gas is ionized and Cl ₂ gas is ionized. ₂ Gas plasma (raw material gas plasma) 21 is generated. Below the plasma antenna 34, the member to be etched 3 that is a conductor is provided.
1 exists, but Cl ₂ gas plasma 21 is stably generated between the member to be etched 31 and the substrate 3, that is, below the member to be etched 31, by the following action.

The operation of generating the Cl ₂ gas plasma 21 below the member 31 to be etched will be described. As shown in FIG. 5, the electric current A of the planar ring-shaped plasma antenna 34 crosses the protrusion 33. At this time,
An induced current b is generated on the surface of the protrusion 33 facing the plasma antenna 34. The notch 3 is formed in the member 31 to be etched.
Since 5 (space) exists, the induced current b flows to the lower surface of each protrusion 33 and becomes a flow a in the same direction as the electric flow A of the plasma antenna 34 (Faraday shield). .

Therefore, when the member 31 to be etched is viewed from the substrate 3 side, the electric flow A of the plasma antenna 34
In this state, there is no flow in the direction of canceling the current, and the ring portion 32 is grounded and the projection 33 is maintained at the same potential. As a result, even if the member to be etched 31 which is a conductor exists, the electromagnetic wave from the plasma antenna 34 surely enters the chamber 1, and the Cl ₂ gas plasma 21 is stabilized below the member to be etched 31. It is supposed to occur.

On the upper part of the support base 2, there is provided a plasma generating means composed of the passage 15, the excitation chamber 16, the plasma antenna 17, and the like.

By the Cl ₂ gas plasma 21, the metal member 7
Etching reaction occurs in the precursor (MxCly: M is W, Ti, Ta,
A metal such as TiSi) 22 is generated. NH ₃ gas is ionized in the excitation chamber 16 to generate NH ₃ gas plasma 23.
Excited ammonia of the NH ₃ gas plasma 23 in the excitation chamber 16 is sent from the opening 14 to the precursor (MxCly) 22 in the chamber 1. As a result, the metal component of the precursor (MxCly) 22 reacts with ammonia to generate a metal nitride (MN) (generation means). At this time, the metal member 7 and the excitation chamber 16
Is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by plasma.

The metal nitride (MN) produced inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is produced on the surface of the substrate 3. After the MN thin film 24 is generated, the NH ₃ gas and the power supply to the power source 19 are stopped, so that the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is lower than that of the metal member 7. The precursor (MxCly) 22 carried to the substrate 3 is reduced to only metal (M) ions and applied to the substrate 3, and an M thin film 25 is formed on the MN thin film 24 of the substrate 3. MN thin film 24 and M thin film 25
Thus, the barrier metal film 26 is formed (see FIG. 2).
Exhaust port 2 for gases and etching products that do not participate in the reaction
Exhausted from 7.

In the barrier metal film forming apparatus having the above structure,
Similar to the first embodiment, the barrier metal film 26 is produced by generating a metal by plasma, so that the barrier metal film 26 can be uniformly and thinly formed. Therefore, for example, even a small recess having a width of several hundreds nm, which is provided on the substrate 3, can be accurately formed even in the inside thereof, has excellent embeddability, and can form the barrier metal film 26 at a high speed in an extremely thin state. It becomes possible to do.

The member to be etched 31 is provided with a plurality of protrusions 33 in the circumferential direction on the inner peripheral side of the ring portion 32.
Since the notch 35 (space) formed between the protrusions 33 exists, the induced current generated in the member to be etched 31 has a flow in the same direction as the electric current of the plasma antenna 34 when viewed from the substrate 3 side. . As a result, even if the member to be etched 31 which is a conductor exists below the plasma antenna 34, the electromagnetic wave from the plasma antenna 34 surely enters the chamber 1 and the member to be etched 31 is located below the member to be etched 31.
The Cl ₂ gas plasma 21 can be stably generated.

A barrier metal film production apparatus and a barrier metal film production method according to the third embodiment of the present invention will be described with reference to FIG. FIG. 6 shows a schematic side view of a barrier metal film forming apparatus according to the third embodiment of the present invention. still,
The same members as those shown in FIGS. 1 and 3 are designated by the same reference numerals, and duplicate description is omitted.

The upper opening of the chamber 1 is closed by a ceiling plate 30 made of ceramics (insulating material), for example. The lower surface of the ceiling plate 30 is made of metal (for example, W, T
A member 41 to be etched (i, Ta, TiSi, etc.) is provided, and the member 41 to be etched has a quadrangular pyramid shape. Plural places (for example, 4 places) around the upper part of the cylindrical portion of the chamber 1
A slit-shaped second opening 42 is formed in each of the first and second openings 42, and one end of a cylindrical second passage 43 is fixed to the second opening 42.

A second cylindrical excitation chamber 44 made of an insulator is provided in the middle of the second passage 43, and a coiled second plasma antenna 45 is provided around the second excitation chamber 44. The two-plasma antenna 45 is connected to a matching unit 48 and a power source 49 to supply power. Second plasma antenna 4
5, the matching device 48 and the power supply 49 constitute a plasma generating means.

A flow controller 46 is provided at the other end of the second passage 43.
Is connected, and a raw material gas containing chlorine (Cl ₂ gas diluted with He, Ar, etc. to a chlorine concentration of ≦ 50%, preferably about 10%) is supplied to the passage 43 through the flow rate controller 46. It By injecting electromagnetic waves from the second plasma antenna 45 into the second excitation chamber 44, Cl ₂ gas is ionized and Cl ₂ gas plasma (source gas plasma) 47 is generated. The _second generation of excited chlorine due to the generation of Cl ₂ gas plasma 47
It is sent into the chamber 1 through the opening 42, and the member 41 to be etched is etched by excited chlorine.

In the barrier metal film forming apparatus described above, the raw material gas is supplied into the second passage 43 through the flow rate controller 46 to feed the raw material gas into the second excitation chamber 44. By injecting electromagnetic waves from the second plasma antenna 45 into the second excitation chamber 44, Cl ₂ gas is ionized and Cl ₂ gas plasma (source gas plasma) 47 is generated. Vacuum device 8
Since a predetermined differential pressure is set between the pressure inside the chamber 1 and the pressure inside the second excitation chamber 44,
Excited chlorine of the _two- gas plasma 47 is sent from the opening 42 to the member 41 to be etched in the chamber 1. The excited chlorine causes an etching reaction on the member 41 to be etched, and (MxCly) 22 is generated inside the chamber 1. At this time, the member to be etched 41 is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by the heater 50 provided on the ceiling plate 30.

NH ₃ gas is ionized in the excitation chamber 16
₃ Gas plasma 23 is generated. Excited ammonia of the NH ₃ gas plasma 23 in the excitation chamber 16 is sent from the opening 14 to the precursor (MxCly) 22 in the chamber 1. As a result, the metal component of the precursor (MxCly) 22 reacts with ammonia to generate a metal nitride (MN). At this time, the excitation chamber 16 is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by the plasma.

The metal nitride (MN) produced inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is produced on the surface of the substrate 3. After the MN thin film 24 is generated, the NH ₃ gas and the power supply to the power source 19 are stopped, so that the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is lower than that of the member 41 to be etched. The precursor (MxCly) 22 carried to the substrate 3 is converted into only metal (M) ions by a reduction reaction and applied to the substrate 3,
The M thin film 25 is formed on the MN thin film 24. MN thin film 24
A barrier metal film 26 is formed by the M thin film 25 (see FIG. 2). Gases and etching products that do not participate in the reaction are exhausted from the exhaust port 27.

In the barrier metal film forming apparatus having the above structure,
Similar to the first and second embodiments, the barrier metal film 26 is produced by generating a metal by plasma, so that the barrier metal film 26 can be uniformly and thinly formed. become. Therefore, for example, even a small recess having a width of several hundreds nm, which is provided on the substrate 3, can be accurately formed even in the inside thereof, has excellent embeddability, and can form the barrier metal film 26 at a high speed in an extremely thin state. It becomes possible to do.

The second excitation chamber 4 separated from the chamber 1
Since the Cl ₂ gas plasma 47 is generated in Step 4, the substrate 3 is not exposed to the plasma, and the substrate 3 is not damaged by the plasma.

In the second excitation chamber 44, Cl ₂ gas plasma 4
As a means for generating 7, that is, a means for exciting a raw material gas to be an excited raw material, a microwave, a laser, an electron beam,
It is also possible to use synchrotron radiation or the like, and it is also possible to heat the metal filament to a high temperature to generate the precursor.
In addition, the configuration for isolating the Cl ₂ gas plasma 47 from the substrate 3 may be, in addition to the configuration in which the second excitation chamber 44 is provided in the passage 43, other configurations such as, for example, isolating the chamber 1. .

A barrier metal film production apparatus and a barrier metal film production method according to the fourth embodiment of the present invention will be described with reference to FIG. FIG. 7 shows a schematic side view of a barrier metal film forming apparatus according to the fourth embodiment of the present invention. still,
The same members as those shown in FIG. 1 are designated by the same reference numerals, and the duplicate description is omitted.

In contrast to the barrier metal film forming apparatus of the first embodiment shown in FIG. 1, the plasma antenna 9 is not provided around the cylindrical portion of the chamber 1, and the metal member 7 is provided with a matching box 10 and a matching box 10. The power supply 11 is connected to supply power to the metal member 7.

In the barrier metal film forming apparatus described above, the raw material gas is supplied from the nozzle 12 into the chamber 1, and the electromagnetic wave is made incident on the inside of the chamber 1 from the metal member 7, whereby the Cl ₂ gas is ionized and Cl ₂ gas is generated. ₂ Gas plasma (raw material gas plasma) 14 is generated. Cl ₂ gas plasma 14
Thereby, an etching reaction occurs in the metal member 7, and a precursor (MxCly) 22 is generated. At this time, the metal member 7 is maintained at a temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by a temperature control unit (not shown).

NH ₃ gas is ionized in the excitation chamber 16
₃ Gas plasma 23 is generated. Excited ammonia of the NH ₃ gas plasma 23 in the excitation chamber 16 is sent from the opening 14 to the precursor (MxCly) 22 in the chamber 1. As a result, the metal component of the precursor (MxCly) 22 reacts with ammonia to generate a metal nitride (MN). At this time, the excitation chamber 16 is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by the plasma.

The metal nitride (MN) generated inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is formed on the surface of the substrate 3. After the MN thin film 24 is generated, the NH ₃ gas and the power supply to the power source 19 are stopped, so that the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is lower than that of the member 41 to be etched. The precursor (MxCly) 22 carried to the substrate 3 is converted into only metal (M) ions by a reduction reaction and applied to the substrate 3,
The M thin film 25 is formed on the MN thin film 24. MN thin film 24
A barrier metal film 26 is formed by the M thin film 25 (see FIG. 2). Gases and etching products that do not participate in the reaction are exhausted from the exhaust port 27.

In the barrier metal film forming apparatus having the above structure,
Similar to the first to third embodiments, the metal is generated by plasma to form the barrier metal film 26, so that the barrier metal film 26 can be uniformly and thinly formed. become. Therefore, for example, even a small recess having a width of several hundreds nm, which is provided on the substrate 3, can be accurately formed even in the inside thereof, has excellent embeddability, and can form the barrier metal film 26 at a high speed in an extremely thin state. It becomes possible to do.

Further, since the metal member 7 itself is applied as an electrode for plasma generation, the plasma antenna 9 is not required around the cylindrical portion of the chamber 1, and the degree of freedom of the surrounding structure can be increased.

A fifth embodiment of the barrier metal film production apparatus and barrier metal film production method of the present invention will be described with reference to FIG. FIG. 8 shows a schematic side view of the barrier metal film production apparatus according to the fifth embodiment of the present invention. Incidentally, FIG.
The same members as those of the first embodiment shown in FIG.

The barrier metal film forming apparatus shown in FIG.
As compared with the first embodiment shown in FIG. 1, the opening 14, the passage 15, the excitation chamber 16, the plasma antenna 17, the matching unit 1
8, the power supply 19 and the flow rate controller 20 are eliminated. A nozzle 12 that supplies a mixed gas of a source gas (Cl ₂ gas) and a nitrogen gas (N ₂ gas) that is a nitrogen-containing gas into the chamber 1 is connected to the cylindrical portion of the chamber 1. Cl ₂ gas and N ₂ gas are mixed gas flow controller 8
1, and the nozzle 12 has a mixed gas flow controller 81.
A mixed gas of Cl ₂ gas and N ₂ gas is supplied via. Other configurations are the same as those in the first embodiment.

In the barrier metal film forming apparatus described above,
Cl from the nozzle 12 inside the chamber 1 ₂Gas and N₂Gas mixture
The combined gas is supplied, and electromagnetic waves are emitted from the plasma antenna 9.
By entering the inside of the₂Gas and N₂Gas
Ionized Cl₂Gas and N₂Gas plasma 82 is generated
To do. Cl₂Gas and N₂Gas plasma 82 causes metal parts
An etching reaction occurs in the material 7, and the precursor (MxCly: M is W, T
(i, Ta, TiSi, etc.) 22 is produced and the precursor 2
2 and N₂React to produce metal nitride (MN). This
At this time, the metal member 7 is plasma (or a temperature not shown).
Temperature control means), a predetermined temperature higher than the temperature of the substrate 3
(Eg, 200 ° C. to 400 ° C.).

The metal nitride (MN) produced inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is produced on the surface of the substrate 3. After the MN thin film 24 is generated, by stopping the supply of N ₂ gas to the mixed gas flow rate controller 81, the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is controlled to be lower than that of the metal member 7. . The precursor (MxCly) 22 carried to the substrate 3 is converted into only metal (M) ions by a reduction reaction and applied to the substrate 3,
The M thin film 25 is formed on the MN thin film 24. MN thin film 24
A barrier metal film 26 is formed by the M thin film 25 (see FIG. 2).

Substrate 3 on which barrier metal film 26 is formed
A copper (Cu) thin film, an aluminum (Al) thin film, or the like is formed on the barrier metal film 26 by a film forming apparatus. The presence of the barrier metal film 26 prevents the diffusion of Cu into the substrate 3 by the MN thin film 24 and the M thin film 25, for example.
Cu adhesion is secured.

The barrier metal film 26 may be formed depending on the case where the material to be formed is a material having no problem in adhesion (eg, Al) or the case where the nitride is a metal capable of maintaining adhesion.
It is also possible to omit the M thin film 25.

In the barrier metal film forming apparatus having the above structure,
In addition to obtaining the same effect as the first embodiment, the gas supply system can be simplified and the number of plasma sources can be reduced, so that the product cost can be reduced.

A sixth embodiment of the barrier metal film forming apparatus and the barrier metal film forming method of the present invention will be described with reference to FIG. FIG. 9 shows a schematic side view of a barrier metal film forming apparatus according to the sixth embodiment of the present invention. Incidentally, FIG.
The same members as those of the second embodiment example and the fifth embodiment example shown in FIGS. 5 and 8 are designated by the same reference numerals, and duplicate description is omitted.

The barrier metal film forming apparatus shown in FIG.
As compared with the second embodiment shown in FIG. 3, the opening 14, the passage 15, the excitation chamber 16, the plasma antenna 17, and the matching box 1 are provided.
8, the power supply 19 and the flow rate controller 20 are eliminated. Then, similarly to the fifth embodiment, the chamber 1
The raw material gas (Cl ₂ gas) inside the chamber 1
A nozzle 12 for supplying a mixed gas of nitrogen gas (N ₂ gas) which is a nitrogen-containing gas is connected. The Cl ₂ gas and the N ₂ gas are mixed by the mixed gas flow rate controller 81, and the mixed gas of Cl ₂ gas and N ₂ gas is supplied to the nozzle 12 via the mixed gas flow rate controller 81. Other configurations are the same as those of the second embodiment.

In the barrier metal film forming apparatus described above,
Cl from the nozzle 12 inside the chamber 1 ₂Gas and N₂Gas mixture
The combined gas is supplied, and electromagnetic waves are emitted from the plasma antenna 34.
By entering the inside of the chamber 1, Cl₂Gas and N₂gas
Is ionized and Cl₂Gas and N₂Gas plasma 82 is emitted
To live. The lower part of the plasma antenna 34 is a conductor
The member to be etched 31 exists, but as described above.
Between the member 31 to be etched and the substrate 3, that is,
Cl on the underside of the₂Gas and N₂Gas plasma
82 is generated stably.

With Cl ₂ gas and N ₂ gas plasma 82,
An etching reaction occurs in the metal member 7, and the precursor (MxCly: M
Is a metal such as W, Ti, Ta, TiSi) 22 and the precursor 22 reacts with N ₂ to generate a metal nitride (MN). At this time, the metal member 7 is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by plasma (or a temperature control unit (not shown)).

The metal nitride (MN) generated inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is formed on the surface of the substrate 3. After the MN thin film 24 is generated, by stopping the supply of N ₂ gas to the mixed gas flow rate controller 81, the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is controlled to be lower than that of the metal member 7. . The precursor (MxCly) 22 carried to the substrate 3 is converted into only metal (M) ions by a reduction reaction and applied to the substrate 3,
The M thin film 25 is formed on the MN thin film 24. MN thin film 24
A barrier metal film 26 is formed by the M thin film 25 (see FIG. 2).

Substrate 3 on which barrier metal film 26 is formed
A copper (Cu) thin film, an aluminum (Al) thin film, or the like is formed on the barrier metal film 26 by a film forming apparatus. The presence of the barrier metal film 26 prevents the diffusion of Cu into the substrate 3 by the MN thin film 24 and the M thin film 25, for example.
Cu adhesion is secured.

The barrier metal film 26 may be formed depending on the case where the material to be formed is a material having no problem in adhesion (for example, Al) or the case where the nitride is a metal capable of maintaining adhesion.
It is also possible to omit the M thin film 25.

In the barrier metal film forming apparatus having the above structure,
In addition to obtaining the same effect as the second embodiment, the gas supply system can be simplified and the number of plasma sources can be reduced, so that the product cost can be reduced.

A seventh embodiment of the barrier metal film production apparatus and barrier metal film production method of the present invention will be described with reference to FIG. FIG. 10 shows a schematic side view of a barrier metal film forming apparatus according to the seventh embodiment of the present invention. still,
The same members as those of the third and fifth exemplary embodiments shown in FIGS. 6 and 8 are designated by the same reference numerals, and duplicate description is omitted.

The barrier metal film forming apparatus shown in FIG. 10 is different from the third embodiment shown in FIG.
4, the passage 15, the excitation chamber 16, the plasma antenna 17, the matching box 18, the power supply 19, and the flow rate controller 20 are eliminated. Then, in the second excitation chamber 44, a raw material gas (Cl ₂ gas) and a nitrogen gas (N ₂ gas) which is a nitrogen-containing gas.
The mixed gas of is supplied from the mixed gas flow controller 81.
Other configurations are the same as those of the third embodiment.

In the barrier metal film forming apparatus described above, the mixed gas of Cl ₂ gas and N ₂ gas is supplied into the second passage 43 through the mixed gas flow rate controller 81 to supply Cl ₂ to the second excitation chamber 44.
A mixed gas of gas and N ₂ gas is fed. By injecting an electromagnetic wave from the second plasma antenna 45 into the second excitation chamber 44, Cl ₂ gas and N ₂ gas are ionized and Cl ₂ gas and N ₂ gas plasma 82 is generated. Since a predetermined differential pressure is set between the pressure in the chamber 1 and the pressure in the second excitation chamber 44 by the vacuum device 8, Cl ₂ gas in the second excitation chamber 44 and excited chlorine and excitation in the N ₂ gas plasma 82 Nitrogen is sent from the opening 42 to the member 41 to be etched in the chamber 1. The excited chlorine causes an etching reaction on the member 41 to be etched, and (MxCly) 22 is generated inside the chamber 1, and the precursor 22 and excited nitrogen react with each other to generate metal nitride (MN). At this time, the member to be etched 41 is heated to a predetermined temperature (eg, 200 ° C. to 4 ° C.) higher than the temperature of the substrate 3 by the heater 50 provided on the ceiling plate 30.
The temperature is maintained at 00 ° C.

The metal nitride (MN) generated inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is formed on the surface of the substrate 3. After the MN thin film 24 is generated, the supply of the N ₂ gas to the mixed gas flow rate controller 81 is stopped, so that the precursor (MxCly) 22 is transferred to the substrate 3 whose temperature is lower than that of the member 41 to be etched. Be done.
The precursor (MxCly) 22 carried to the substrate 3 is reduced to only metal (M) ions and applied to the substrate 3, and an M thin film 25 is formed on the MN thin film 24 of the substrate 3. A barrier metal film 26 is formed by the MN thin film 24 and the M thin film 25 (see FIG. 2).

Substrate 3 with Barrier Metal Film 26 Formed
A copper (Cu) thin film, an aluminum (Al) thin film, or the like is formed on the barrier metal film 26 by a film forming apparatus. The presence of the barrier metal film 26 prevents the diffusion of Cu into the substrate 3 by the MN thin film 24 and the M thin film 25, for example.
Cu adhesion is secured.

The barrier metal film 26 may be used depending on the case where the material to be formed is a material having no problem in adhesion (eg, Al) or the case where the nitride is a metal capable of maintaining adhesion.
It is also possible to omit the M thin film 25.

In the barrier metal film forming apparatus having the above structure,
In addition to the same effect as the third embodiment, the gas supply system can be simplified and the number of plasma sources can be reduced, so that the product cost can be reduced.

An eighth embodiment of the barrier metal film forming apparatus and the barrier metal film forming method of the present invention will be described with reference to FIG. FIG. 11 shows a schematic side view of the barrier metal film production apparatus according to the eighth embodiment of the present invention. still,
The same members as those of the fourth embodiment example and the fifth embodiment example shown in FIGS. 7 and 8 are denoted by the same reference numerals, and duplicate description is omitted.

The barrier metal film forming apparatus shown in FIG. 11 is different from the fourth embodiment shown in FIG.
4, the passage 15, the excitation chamber 16, the plasma antenna 17, the matching box 18, the power supply 19, and the flow rate controller 20 are eliminated. A nozzle 12 for supplying a mixed gas of a source gas (Cl ₂ gas) and a nitrogen gas (N ₂ gas) which is a nitrogen-containing gas into the chamber 1 in the cylindrical portion of the chamber 1.
Are connected. The Cl ₂ gas and the N ₂ gas are mixed by the mixed gas flow rate controller 81, and the mixed gas of Cl ₂ gas and N ₂ gas is supplied to the nozzle 12 via the mixed gas flow rate controller 81. Other configurations are the same as those in the fourth embodiment.

In the barrier metal film forming apparatus described above,
Cl from the nozzle 12 inside the chamber 1 ₂Gas and N₂Gas mixture
The combined gas is supplied, and the electromagnetic wave is emitted from the metal member 7 to the chamber 1.
By entering inside, Cl₂Gas and N₂Gas is ionized
Been Cl₂Gas and N₂Gas plasma 82 is generated. Cl
₂Gas and N₂The gas plasma 82 causes the metal member 7 to
Of the precursor (MxCly: M is W, Ti, Ta, TiSi
And the precursor 22 and N₂Is anti
Correspondingly, metal nitride (MN) is produced. At this time, money
The metal member 7 is a plasma (or a temperature control device not shown).
A predetermined temperature higher than the temperature of the substrate 3 (for example,
200 to 400 ° C.).

The metal nitride (MN) produced inside the chamber 1 is carried to the substrate 3 controlled at a low temperature, and the MN thin film 24 is produced on the surface of the substrate 3. After the MN thin film 24 is generated, by stopping the supply of N ₂ gas to the mixed gas flow rate controller 81, the precursor (MxCly) 22 is carried to the substrate 3 whose temperature is controlled to be lower than that of the metal member 7. . The precursor (MxCly) 22 carried to the substrate 3 is converted into only metal (M) ions by a reduction reaction and applied to the substrate 3,
The M thin film 25 is formed on the MN thin film 24. MN thin film 24
A barrier metal film 26 is formed by the M thin film 25 (see FIG. 2).

Substrate 3 with Barrier Metal Film 26 Formed
A copper (Cu) thin film, an aluminum (Al) thin film, or the like is formed on the barrier metal film 26 by a film forming apparatus. The presence of the barrier metal film 26 prevents the diffusion of Cu into the substrate 3 by the MN thin film 24 and the M thin film 25, for example.
Cu adhesion is secured.

The barrier metal film 26 may be formed depending on the case where the material to be formed is a material having no problem in adhesion (eg, Al) or the nitride is a metal capable of maintaining adhesion.
It is also possible to omit the M thin film 25.

In the barrier metal film forming apparatus having the above structure,
In addition to the same effect as in the fourth embodiment, the gas supply system can be simplified and the number of plasma sources can be reduced, so that the product cost can be reduced.

In the fifth to eighth embodiments described above, the N ₂ gas is mixed with Cl ₂ gas by the mixed gas flow rate controller 81 and supplied into the chamber 1. ₂
It is also possible to supply the gas and Cl ₂ gas from separate nozzles. Ammonia can also be used as the nitrogen-containing gas.

[0089]

According to the barrier metal film forming apparatus of the present invention, a chamber for accommodating a substrate, a metal member to be etched provided in the chamber at a position facing the substrate,
Raw material gas supply means for supplying a raw material gas containing halogen into the chamber between the substrate and the member to be etched, and plasma of the inside of the chamber to generate source gas plasma to etch the member to be etched with the source gas plasma. The plasma generating means for generating a precursor of the metal component and the source gas contained in the member to be etched by this, excitation means for isolating the nitrogen-containing gas containing nitrogen from the chamber, and excited by the excitation means. Since it is provided with a generating means for generating a metal nitride with the precursor by nitrogen and a controlling means for lowering the temperature of the substrate side to a temperature lower than the generating means side to deposit the metal nitride on the substrate. It is possible to produce a barrier metal film, which is made of a metal nitride film and suppresses the diffusivity, by generating a metal by plasma, and to form a uniform and thin film. It is possible to deposit a barrier metal film. As a result, it is possible to form a barrier metal film at a high speed in an extremely thin state, because even a small recess having a width of several hundreds nm, which is provided on the substrate, can be accurately formed even inside. Will be possible.

Further, in the barrier metal film forming apparatus of the present invention, a chamber for accommodating the substrate, a metal member to be etched provided in the chamber at a position facing the substrate, and a member between the substrate and the member to be etched are provided. A source gas supply means for supplying a source gas containing halogen into the chamber, and a metal contained in the member to be etched by plasmaizing the inside of the chamber to generate the source gas plasma and etching the member to be etched with the source gas plasma. Between the plasma generating means for generating the precursor of the component and the raw material gas, the exciting means for exciting the nitrogen-containing gas containing nitrogen from the chamber, and the precursor by the nitrogen excited by the exciting means. The generation means for generating metal nitride and the temperature on the substrate side are made lower than the temperature on the generation means side to form the metal nitride on the substrate. And the metal nitride is formed, and then the nitrogen-containing gas is stopped so that the temperature on the substrate side is lower than the temperature on the etched side to form the metal component of the precursor on the metal nitride on the substrate. Since the control means is provided, it is possible to produce a barrier metal film formed of a metal nitride film and a metal nitride film, which suppresses the diffusivity and improves the adhesion, since the control means is provided. It becomes possible to form a barrier metal film in a uniform shape. As a result, it is possible to form a barrier metal film at a high speed in an extremely thin state, because even a small recess having a width of, for example, several hundreds nm, which is provided on a substrate, can be accurately formed even inside. Will be possible.

Further, the barrier metal film forming apparatus of the present invention includes a chamber for accommodating a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a substrate to be etched. A source gas supply means for supplying a source gas containing halogen into the chamber, a nitrogen containing gas supply means for supplying a nitrogen containing gas containing nitrogen into the chamber between the substrate and the member to be etched, and the inside of the chamber. Between the precursor and the precursor gas to generate a precursor of a metal component contained in the member to be etched by etching the member to be etched with the source gas plasma Plasma generating means for generating metal nitride, and the temperature on the substrate side is lower than the temperature on the etched member side. Since it is provided with a control means for forming a metal nitride film on the substrate by forming a metal nitride film, it is possible to form a metal nitride film and to form a barrier metal film composed of the metal nitride film and the metal film with suppressed diffusivity. The barrier metal film can be uniformly and thinly formed, the gas supply system can be simplified, and the number of plasma sources can be reduced, so that the product cost can be reduced. As a result, even a small recess having a width of, for example, several hundreds nm, which is provided on the substrate, can be accurately formed even in the interior, has excellent embedding properties, and can form a barrier metal film at a high speed in an extremely thin state at low cost. It becomes possible to film.

Further, in the barrier metal film forming apparatus of the present invention, the chamber for accommodating the substrate, the member to be etched made of metal provided in the chamber at the position facing the substrate, and the member to be etched between the substrate and the member to be etched are provided. A source gas supply means for supplying a source gas containing halogen into the chamber, a nitrogen containing gas supply means for supplying a nitrogen containing gas containing nitrogen into the chamber between the substrate and the member to be etched, and the inside of the chamber. Between the precursor and the precursor gas to generate a precursor of a metal component contained in the member to be etched by etching the member to be etched with the source gas plasma Plasma generating means for generating metal nitride, and the temperature on the substrate side is lower than the temperature on the etched member side. After forming the metal nitride film on the substrate, the nitrogen-containing gas is stopped and the temperature of the substrate side is made lower than the temperature of the etched member side so that the metal component of the precursor is formed on the metal nitride of the substrate. Since the control means for forming a film is provided, it is possible to produce a barrier metal film having a metal nitride film and a metal film that suppresses diffusibility and is improved in adhesiveness by generating a metal by plasma, and to form a uniform film. Moreover, the barrier metal film can be formed in a thin film shape, the gas supply system can be simplified, and the number of plasma sources can be reduced, so that the product cost can be reduced. As a result, for example, several hundreds of nm are provided on the substrate.
It is possible to form a barrier metal film at a low cost at a high speed in an extremely thin state, because a film can be accurately formed even in a recess having a small width and has excellent embeddability.

In the method for producing a barrier metal film of the present invention, a source gas containing halogen is supplied into the chamber between the substrate and the member to be etched made of metal, and the inside of the chamber is turned into plasma to generate source gas plasma. By etching the member to be etched with the source gas plasma to generate a precursor of the metal component contained in the member to be etched and the source gas, the nitrogen containing nitrogen is isolated from the chamber in which the substrate is accommodated. A gas was excited, and metal nitride was formed between the precursor and the precursor by the excited nitrogen, and the temperature of the substrate side was made lower than the temperature of the generation means side to form the metal nitride film on the substrate. Therefore, it is possible to produce a barrier metal film, which is made of a metal nitride film and suppresses the diffusivity, by generating a metal by plasma, and to uniformly and thinly form the barrier metal film. It is possible to deposit a Ametaru film. As a result, for example, several hundreds of n are provided on the substrate.
It is possible to form a barrier metal film at a high speed in an extremely thin state, because a film can be formed accurately even in a recess having a small width of about m, and the filling property is excellent.

In the method of forming a barrier metal film of the present invention, the source gas containing halogen is supplied into the chamber between the substrate and the member to be etched made of metal, and the inside of the chamber is turned into plasma to form the source gas plasma. To generate a precursor of a metal component contained in the member to be etched and the source gas by etching the member to be etched with the source gas plasma, and to contain nitrogen in a chamber isolated from the chamber in which the substrate is housed. A nitrogen-containing gas is excited, metal nitride is generated between the precursor and the excited nitrogen, the temperature of the substrate side is lower than the temperature of the generation means side to form a metal nitride film on the substrate, After forming the metal nitride film, the nitrogen-containing gas is stopped and the temperature on the substrate side is made lower than the temperature on the etched member side so that the metal component of the precursor is removed from the metal nitride on the substrate. Since the film is formed, it is possible to form a barrier metal film having a metal nitride film and a metal film, which suppresses the diffusivity and improves the adhesion, by forming a metal by plasma, and to form a uniform and thin film. It becomes possible to form a barrier metal film in a uniform shape. As a result, it is possible to form a barrier metal film at a high speed in an extremely thin state, because even a small recess having a width of several hundreds nm, which is provided on the substrate, can be accurately formed even inside. Will be possible.

Further, in the barrier metal film forming method of the present invention, the source gas containing halogen and the nitrogen containing gas containing nitrogen are supplied into the chamber between the substrate and the member to be etched made of metal, and By generating a precursor of the metal component contained in the member to be etched and the source gas by etching the member to be etched with the source gas plasma by generating plasma of the source gas and nitrogen-containing gas plasma by making the inside of the precursor Since the metal nitride is generated between the substrates and the temperature of the substrate side is made lower than the temperature of the member to be etched to deposit the metal nitride on the substrate, the metal is generated by the plasma and the metal nitride It is possible to form a barrier metal film consisting of a film with suppressed diffusivity, and it is possible to form a barrier metal film uniformly and in a thin film shape. Rutotomoni, the supply line of gas is simplified, since it is possible to reduce the plasma source, the product cost can be reduced. As a result, even a small recess having a width of, for example, several hundreds nm provided on the substrate can be accurately formed even in the inside thereof, and the embedding property is excellent,
It becomes possible to form a barrier metal film at low cost at high speed in an extremely thin state.

Further, according to the method for producing a barrier metal film of the present invention for achieving the above object, the source gas containing halogen and the nitrogen containing nitrogen are contained in the chamber between the substrate and the member to be etched made of metal. A precursor of a metal component and a source gas contained in the member to be etched is generated by supplying a gas to generate plasma in the chamber to generate a source gas and a nitrogen-containing gas plasma and etching the member to be etched with the source gas plasma. A metal nitride is formed between the precursor and the precursor, and the temperature of the substrate side is made lower than the temperature of the member to be etched to form the metal nitride film on the substrate. After that, the nitrogen-containing gas is stopped and the temperature of the substrate side is made lower than the temperature of the member to be etched so that the metal component of the precursor is deposited on the metal nitride of the substrate. Therefore, it is possible to produce a barrier metal film including a metal nitride film and a metal film, which suppresses the diffusivity and improves the adhesiveness, by generating a metal by plasma, and the barrier metal film is uniformly and thinly formed. It is possible to form a film, the gas supply system is simplified, and the number of plasma sources can be reduced, so that the product cost can be reduced. As a result, even a small recess having a width of, for example, several hundreds nm, which is provided on the substrate, can be accurately formed even in the interior, has excellent embedding properties, and can form a barrier metal film at a high speed in an extremely thin state at a low cost. It becomes possible to film.

[Brief description of drawings]

FIG. 1 is a schematic side view of a barrier metal film manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a detailed view of a substrate on which a barrier metal film is formed.

FIG. 3 is a schematic side view of a barrier metal film production apparatus according to a second embodiment of the present invention.

FIG. 4 is a view taken along the line IV-IV in FIG.

5 is a view taken along the line V-V in FIG.

FIG. 6 is a schematic side view of a barrier metal film forming apparatus according to a third embodiment of the present invention.

FIG. 7 is a schematic side view of a barrier metal film forming apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a schematic side view of a barrier metal film forming apparatus according to a fifth embodiment of the present invention.

FIG. 9 is a schematic side view of a barrier metal film forming apparatus according to a sixth embodiment of the present invention.

FIG. 10 is a schematic side view of a barrier metal film forming apparatus according to a seventh embodiment of the present invention.

FIG. 11 is a schematic side view of a barrier metal film forming apparatus according to an eighth embodiment of the present invention.

[Explanation of symbols]

1 Chamber 2 Support Base 3 Substrate 4, 50 Heater 5 Refrigerant Flow Means 6 Temperature Control Means 7 Metal Member 8 Vacuum Device 9, 17, 34 Plasma Antenna 10, 18, 48 Matching Device 11, 19, 49 Power Supply 12 Nozzle 13, 20 , 46 Flow controller 14 Opening 21, 47 Cl ₂ gas plasma (source gas plasma) 22 precursor (MxCly) 23 NH ₃ gas plasma 24 NH thin film 25 M thin film 26 barrier metal film 30 ceiling plate 31, 41 Etching member 32 ring member 33 protrusion 35 notch 42 second opening 43 second passage 44 second excitation chamber 45 second plasma antenna 12, 21 nozzle 13, 22 flow controller 14, 23 Cl ₂ gas plasma (source gas plasma) 17 Exhaust port 81 Mixed gas flow controller 82 Cl ₂ gas and N ₂ gas plasma

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Ryuichi Matsuda             2-1-1 Niihama, Arai-cho, Takasago City, Hyogo Prefecture             Takasago Laboratory, Mitsubishi Heavy Industries, Ltd. F-term (reference) 4K030 AA03 BA17 BA18 BA20 BA38                       EA01 FA04 JA10                 4M104 BB30 BB32 BB33 BB36 DD44                       FF18 FF22

Claims (12)

[Claims] 1. A chamber for accommodating a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a source gas containing halogen in a chamber between the substrate and the member to be etched. A precursor of a metal component and a source gas contained in the member to be etched is generated by plasma-generating the source gas plasma by supplying the source gas supply means to supply the source gas plasma and etching the member to be etched with the source gas plasma. Plasma generating means, excitation means for exciting the nitrogen-containing gas containing nitrogen isolated from the chamber, and generation means for generating a metal nitride between the precursor by the nitrogen excited by the excitation means, Control means for forming a metal nitride film on the substrate by making the temperature of the substrate side lower than the temperature of the generating means side. Barrier metal film production equipment. 2. A chamber containing a substrate, a metal member to be etched provided in the chamber at a position facing the substrate, and a source gas containing halogen in a chamber between the substrate and the member to be etched. A precursor of a metal component and a source gas contained in the member to be etched is generated by plasma-generating the source gas plasma by supplying the source gas supply means to supply the source gas plasma and etching the member to be etched with the source gas plasma. Plasma generating means, excitation means for exciting the nitrogen-containing gas containing nitrogen isolated from the chamber, and generation means for generating a metal nitride between the precursor by the nitrogen excited by the excitation means, After forming the metal nitride film on the substrate by lowering the temperature on the substrate side lower than the temperature on the generating means side, And a control means for stopping the nitrogen-containing gas so that the temperature on the substrate side is lower than the temperature on the member side to be etched to deposit the metal component of the precursor on the metal nitride of the substrate. Barrier metal film production equipment. 3. A chamber containing a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a source gas containing halogen in a chamber between the substrate and the member to be etched. Source gas supply means for supplying, nitrogen-containing gas supply means for supplying a nitrogen-containing gas containing nitrogen into the chamber between the substrate and the member to be etched, and source gas and nitrogen-containing gas by plasmaizing the inside of the chamber Plasma generating means for generating plasma to generate a precursor of a metal component contained in the member to be etched and the source gas by etching the member to be etched with the source gas plasma, and to generate a metal nitride between the precursor And controlling the temperature of the substrate to be lower than the temperature of the member to be etched to form a metal nitride film on the substrate. And a barrier metal film forming apparatus. 4. A chamber containing a substrate, a member to be etched made of metal provided in the chamber at a position facing the substrate, and a source gas containing halogen in a chamber between the substrate and the member to be etched. Source gas supply means for supplying, nitrogen-containing gas supply means for supplying a nitrogen-containing gas containing nitrogen into the chamber between the substrate and the member to be etched, and source gas and nitrogen-containing gas by plasmaizing the inside of the chamber Plasma generating means for generating plasma to generate a precursor of a metal component contained in the member to be etched and the source gas by etching the member to be etched with the source gas plasma, and to generate a metal nitride between the precursor After forming the metal nitride film on the substrate by lowering the temperature on the substrate side than the temperature on the etched member side, And a control means for stopping the nitrogen-containing gas so that the temperature on the substrate side is lower than the temperature on the member side to be etched to deposit the metal component of the precursor on the metal nitride of the substrate. Barrier metal film production equipment. 5. The barrier metal film forming apparatus according to claim 1, wherein the plasma generating means includes a coil-shaped winding antenna arranged around the chamber. 6. The barrier metal film forming apparatus according to claim 1, wherein the halogen-containing source gas is a chlorine-containing source gas. 7. The barrier metal film forming apparatus according to claim 1, wherein the nitrogen-containing gas containing nitrogen is a gas containing ammonia. 8. The barrier metal film forming apparatus according to claim 1, wherein the member to be etched is tantalum, tungsten, titanium, or silicon which is a halide-forming metal. 9. A source material gas containing halogen is supplied into a chamber between a substrate and a member to be etched made of metal, the inside of the chamber is turned into plasma to generate source gas plasma, and the source gas plasma is used to etch the member to be etched. By generating a precursor of the metal component and the source gas contained in the member to be etched by etching, and exciting the nitrogen-containing gas containing nitrogen isolated from the chamber in which the substrate is accommodated, A method for producing a barrier metal film, which comprises forming a metal nitride with a precursor by nitrogen, and making the temperature of the substrate side lower than the temperature of the generating means side to form the metal nitride on the substrate. 10. A material gas containing halogen is supplied into a chamber between a substrate and a member to be etched made of metal, plasma is generated inside the chamber to generate material gas plasma, and the material gas plasma is used to etch the member to be etched. By generating a precursor of the metal component and the source gas contained in the member to be etched by etching, and exciting the nitrogen-containing gas containing nitrogen isolated from the chamber in which the substrate is accommodated, Nitrogen produces a metal nitride between the precursor and the temperature of the substrate side lower than the temperature of the producing means to form a metal nitride film on the substrate. A barrier metal, characterized in that the contained gas is stopped and the temperature of the substrate side is made lower than the temperature of the member to be etched to deposit the metal component of the precursor on the metal nitride of the substrate. Film manufacturing method. 11. A source gas containing halogen and a nitrogen-containing gas containing nitrogen are supplied into the chamber between the substrate and the member to be etched made of metal, and the inside of the chamber is plasmatized to contain the source gas and the nitrogen. By generating a gas plasma and etching the member to be etched with the source gas plasma to generate a precursor of a metal component and a source gas contained in the member to be etched and a metal nitride between the precursor, a substrate A method for producing a barrier metal film, comprising forming a metal nitride film on a substrate by lowering the temperature on the side lower than the temperature on the member to be etched side. 12. A source gas containing halogen and a nitrogen-containing gas containing nitrogen are supplied into the chamber between the substrate and the member to be etched made of metal, and the inside of the chamber is plasma-converted to contain the source gas and the nitrogen. By generating a gas plasma and etching the member to be etched with the source gas plasma to generate a precursor of a metal component and a source gas contained in the member to be etched and a metal nitride between the precursor, a substrate Side temperature lower than the temperature of the etched member side to form a metal nitride film on the substrate, and after forming the metal nitride film, the nitrogen-containing gas is stopped and the substrate side temperature is set to the etched member side. A method for producing a barrier metal film, which comprises lowering the temperature to form a metal component of a precursor on a metal nitride of a substrate.