JP2003209034A - Cleaning method of semiconductor substrate treatment device - Google Patents
Cleaning method of semiconductor substrate treatment deviceInfo
- Publication number
- JP2003209034A JP2003209034A JP2002296731A JP2002296731A JP2003209034A JP 2003209034 A JP2003209034 A JP 2003209034A JP 2002296731 A JP2002296731 A JP 2002296731A JP 2002296731 A JP2002296731 A JP 2002296731A JP 2003209034 A JP2003209034 A JP 2003209034A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- cleaning
- processing apparatus
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 175
- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 238000004140 cleaning Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000012546 transfer Methods 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 22
- 239000012790 adhesive layer Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract 12
- 238000012545 processing Methods 0.000 claims description 95
- 239000002390 adhesive tape Substances 0.000 claims description 41
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 28
- 230000007547 defect Effects 0.000 claims description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 239000003522 acrylic cement Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 abstract description 35
- 230000001070 adhesive effect Effects 0.000 abstract description 34
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229920003002 synthetic resin Polymers 0.000 abstract description 2
- 239000000057 synthetic resin Substances 0.000 abstract description 2
- 230000000593 degrading effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 104
- 210000000078 claw Anatomy 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 102100033029 Carbonic anhydrase-related protein 11 Human genes 0.000 description 1
- 101000867841 Homo sapiens Carbonic anhydrase-related protein 11 Proteins 0.000 description 1
- 101001075218 Homo sapiens Gastrokine-1 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体処理装置の
クリーニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor processing apparatus.
【0002】[0002]
【従来の技術】基板処理装置は、各処理部の間が図8の
様な(A)ベルト式,(B)ローラ式,(C)メカニカ
ル式等の搬送系で連結されており、各搬送系は基板を、
物理的に接触することにより搬送する。その際、基板に
異物が付着していると、その異物が搬送系を構成してい
るベルト801や搬送アーム806に付着し、異物が溜
まって発塵の原因になる。そして、後続の基板に対する
逆汚染つまり再付着する事があり、それが高い清浄度を
必要とされる基板であった場合に、歩留り上致命的な欠
陥を生じさせる原因にもなりかねなかった。この悪影響
を避けるために、搬送系や各処理部を定期的にメンテナ
ンスつまり洗浄処理を施すが、その間装置が停止する
為、稼働率を下げる原因となっていた。特に、真空チャ
ンバー内にこの様な搬送系を有している装置において
は、真空系を立ち下げてから分解・洗浄する必要がある
為、メンテナンスが非常に繁雑であり、洗浄処理は稼働
率を大幅に下げる要因となっていた。2. Description of the Related Art In a substrate processing apparatus, each processing unit is connected by a transfer system such as (A) belt type, (B) roller type, (C) mechanical type, etc., as shown in FIG. The system is a substrate,
It is conveyed by making physical contact. At this time, if foreign matter adheres to the substrate, the foreign matter adheres to the belt 801 or the transport arm 806 that constitutes the transport system, and the foreign matter accumulates and causes dust generation. Then, there is a case where the subsequent substrate is reversely contaminated, that is, redeposition occurs, and when it is a substrate that requires high cleanliness, it may cause a fatal defect in yield. In order to avoid this adverse effect, the transport system and each processing unit are regularly subjected to maintenance, that is, cleaning processing, but during that time, the apparatus is stopped, which has been a cause of lowering the operating rate. In particular, in an apparatus that has such a transfer system in a vacuum chamber, it is necessary to disassemble and clean the vacuum system after it has been shut down, so maintenance is very complicated, and the cleaning process has a high operating rate. It was a factor that drastically lowered it.
【0003】また、このメンテナンスの頻度と労力を減
らす為に、処理基板の合間にダミーの基板を空搬送して
搬送系や各処理部に付着した異物を付着させて除去する
方法があるが、十分に異物の除去効果があるとは言えな
かった。Further, in order to reduce the frequency and labor of this maintenance, there is a method in which a dummy substrate is idly transported between processing substrates to remove foreign substances adhering to the transport system and each processing section. It cannot be said that the foreign matter removing effect is sufficient.
【0004】[0004]
【発明が解決しようとする課題】上記の様に、従来の基
板処理装置のクリーニング方法では、搬送系や各処理部
を定期的にメンテナンスつまり洗浄処理を施す為に、装
置の稼働率を下げる原因となっていた。また、ダミーの
基板を空搬送する方法に於いては、異物の除去効果が十
分とは言えなかった。本発明は、装置の稼働率を落とさ
ずに、且つ異物の除去効果を向上させる基板処理装置の
クリーニングに用いるのに適した両面粘着テープを提供
する事を目的としている。As described above, in the conventional method for cleaning a substrate processing apparatus, the transportation system and each processing unit are regularly subjected to maintenance, that is, cleaning processing, which causes a decrease in the operating rate of the apparatus. It was. Further, in the method of carrying the dummy substrate in an idle state, the effect of removing foreign matter was not sufficient. It is an object of the present invention to provide a double-sided pressure-sensitive adhesive tape suitable for use in cleaning a substrate processing apparatus that improves the removal effect of foreign substances without reducing the operating rate of the apparatus.
【0005】[0005]
【課題を解決するための手段】本発明は上記の問題を解
決すべくなされたもので、粘着性の物質を固着した基板
を搬送する事により基板処理装置内のクリーニングを行
なうにあたって用いるのに適した両面粘着テープであ
る。すなわち本発明は、合成樹脂薄膜よりなる支持体の
両表面に粘着剤層を形成した両面粘着テープであって、
一方の粘着剤層の剥離強度が他方の粘着剤層の剥離強度
より大きいことを特徴とする半導体基板処理装置のクリ
ーニング用両面粘着テープである。The present invention has been made to solve the above problems, and is suitable for use in cleaning the inside of a substrate processing apparatus by transporting a substrate to which an adhesive substance is fixed. It is a double-sided adhesive tape. That is, the present invention is a double-sided adhesive tape having a pressure-sensitive adhesive layer formed on both surfaces of a support made of a synthetic resin thin film,
A double-sided adhesive tape for cleaning a semiconductor substrate processing apparatus, wherein one adhesive layer has a peel strength greater than that of the other adhesive layer.
【0006】[0006]
【発明の実施の形態】以下、図1乃至7を参照して本発
明に係る半導体基板処理装置のクリーニング方法の実施
例を、基板がウエハである場合を例に詳細に説明する。
図1及び図2に粘着性の物質を固着したウエハの構造体
の一例を示す。ウエハ上異物の付着は、ウエハと装置内
搬送経路の接触する部分に偏っているがその分布は多少
の広がりがある。従って、半導体ウエハの主面,裏面,
側面の搬送過程で接触する部分を包括する様な広い範囲
に、各々粘着性の物質(ここでは両面粘着テープ)を貼
り付ける。ここでの搬送過程で接触する部分とは、図8
の様なベルト式,ローラ式,メカニカル式等の搬送系に
おけるウエハとの接触部分や、ウエハ保持用のツメまた
はクランプ,ウエハのストッパー,ウエハチャック等が
ある。図1は、本発明に係る半導体基板処理装置のクリ
ーニングに用いる粘着性のテープを固着したウエハの構
造体の一例を示したものであり、(A)は各要素を分離
した状態における斜視図、(B)は断面図である。半導
体ウエハ103の主面,裏面,側面の搬送過程で接触す
る部分を包括する様な広い範囲に、各々粘着性の物質
(ここでは両面粘着テープ)101, 104,105
を貼り付けている。この粘着性のテープを固着したダミ
ーウエハの異物除去能力は、搬送系や処理部の接触部分
の異物付着を行うにつれその清浄度が劣化する為、何等
かの方法で異物除去能力を回復する必要がある。ここで
は、テープを貼り換える事を異物能力の回復手段とす
る。その為、粘着テープ101に非粘着性の突起状薄膜
である両面粘着テープ剥離用非粘着部102を固着す
る。テープの貼り換えは、非粘着性の薄膜102を引っ
張ることにより粘着テープ101をウエハ103から引
き剥がし、新しい粘着テープ101を貼り付けることに
より、再利用が可能となる。上記粘着性の物質の着脱は
手で行なってもよいし、治具か装置で行なっても構わな
い。図2は本発明に係る半導体基板処理装置のクリーニ
ングに用いる粘着性のテープを固着したウエハの第2の
実施例を示したものであり、(A)は各要素を分離した
状態における斜視図、(B)は断面図である。半導体ウ
エハ203の主面,裏面,側面の搬送過程で接触する部
分を包括する様な広い範囲に、各々粘着性の物質(ここ
では両面粘着テープ)201,204,205を貼り付
けている。図1の場合は、搬送過程において例えばツメ
と接触するといった様に、ウエハ裏面のテープによる被
膜がドーナッツ状に必要となる場合を示しているのに対
し、図2の場合は、搬送過程においてウエハチャック等
と接触するといった様に、裏面全体がテープによる被膜
を必要とする場合を示している。この際、上記の様に、
装置の搬送系及び各処理部におけるウエハに接触する部
分の異物を、確実に吸着除去する為に、ウエハがテープ
によって覆われる範囲は、この接触部を包括する様な広
い範囲にする。この範囲は装置により異なり、ウエハ主
面に貼り付ける両面粘着テープの範囲の例を図3に示
す。図3は、本発明に係る半導体基板処理装置のクリー
ニングに用いる粘着性のテープを固着したウエハの第3
の実施例の上面図であり、(A)は周辺全周クランプ等
ウエハ周辺のドーナッツ状の部分に粘着テープを必要と
する場合(B)は周辺のつめ状クランプ等ウエハ周辺の
散在する領域に粘着テープを必要とする場合を示してい
る。また、図4は本発明に係る半導体基板処理装置のク
リーニングに用いる粘着性のテープを固着したウエハの
第4の実施例の断面図を示したものであり、(A)はウ
エハ全体の断面図、(B)は(A)a部の拡大断面図で
ある。図4(B)は、粘着剤402,支持体405,粘
着剤404の3層構造の両面粘着テープをウエハ403
の両面に貼り付けたものである。支持体の材料として
は、アセテートフィルム(マットフィニッシュ;住友ス
リーエム),ポリエチレンテレフタレート(PET;フ
ジカラー),ふっ素樹脂,テフロン(登録商標)樹脂
(テフロンスカイブドテープ)等があり、粘着剤として
は真空プロセスで不活性が必要とされる場合はシリコン
系粘着剤が適当であるが、常温・常圧プロセスでガスの
発生をある程度許容する場合はアクリル系粘着剤を使用
する事も可能である。尚、図4に示す両面体をウエハに
貼り付ける場合、基板側の粘着テープの剥離強度(f
1)が最表面側の剥離強度(f2)と同等か大きい事つ
まりf1≧f2である事が必要となる。その理由は、f
2の方がf1よりも大きい場合、搬送過程で両面テープ
自身が剥離を起こして接触部に付着する危険性が高く、
異物除去という目的に反するばかりか逆に搬送過程を汚
染する事になる為である。以上の例では、両面粘着テー
プを用いたが、粘着性の薄膜であれば、他のものであっ
ても構わない。次に他の実施例として粘着剤をウエハに
塗布により形成する場合の一例を図5に示す。図5は本
発明に係る半導体基板処理装置のクリーニングに用いる
粘着性の物質を塗布により固着したウエハの一例の断面
図を示したものであり、(A)はウエハ全体の断面図、
(B)(C)は(A)a部の拡大断面図で、(B)は塗
布層が一層、(C)は塗布層が2層の場合であり、ウエ
ハの両面に対し、アクリル系またはシリコン系の粘着剤
を形成するものである。図5(C)の様に2層以上の粘
着剤により粘着層を形成する理由は、粘着性の物質によ
る搬送過程の汚染に対する危険性を回避する為には、上
記と同様に剥離強度がf1≧f2(f1:基板側の粘着
剤の剥離強度,f2:最表面側の粘着剤の剥離強度)の
関係を満たす様に各層の材料を選択する必要がある為。
また、異物除去能力の回復の手段としては、例えばO2
アッシャーや硫酸過水処理により粘着剤を剥離し、再塗
布する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of a cleaning method for a semiconductor substrate processing apparatus according to the present invention will be described in detail with reference to FIGS.
1 and 2 show an example of a wafer structure to which an adhesive substance is fixed. The adherence of foreign matter on the wafer is biased to the contact portion between the wafer and the transfer path in the apparatus, but the distribution thereof is somewhat wide. Therefore, the main surface, back surface,
Adhesive substances (double-sided adhesive tape in this case) are attached to a wide area that covers the parts that come into contact with each other during the transportation process on the side surface. The parts that come into contact with each other in the carrying process here are shown in FIG.
Such as a belt type, roller type, mechanical type, etc. contacting portion with a wafer, a claw or clamp for holding a wafer, a stopper for a wafer, a wafer chuck and the like. FIG. 1 shows an example of a wafer structure to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed. FIG. 1A is a perspective view showing a state in which each element is separated, (B) is a sectional view. Adhesive substances (here, double-sided adhesive tapes) 101, 104, 105 are spread over a wide range so as to cover the main surface, the back surface, and the side surface of the semiconductor wafer 103 that come into contact with each other during the transportation process.
Is pasted. The foreign matter removing ability of the dummy wafer to which the adhesive tape is fixed deteriorates as the foreign matter is attached to the contact portion of the transfer system or the processing unit, so it is necessary to recover the foreign matter removing ability by some method. is there. Here, replacing the tape is used as a means for recovering the foreign matter capability. Therefore, the non-adhesive portion 102 for peeling the double-sided adhesive tape, which is a non-adhesive protruding thin film, is fixed to the adhesive tape 101. The replacement of the tape can be reused by pulling the non-adhesive thin film 102 to remove the adhesive tape 101 from the wafer 103 and attaching a new adhesive tape 101. The attachment / detachment of the sticky substance may be performed by hand, or by a jig or a device. 2A and 2B show a second embodiment of a wafer to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. 2A is a perspective view showing a state where each element is separated, (B) is a sectional view. Adhesive substances (here, double-sided adhesive tapes) 201, 204, and 205 are attached to a wide range covering the main surface, the back surface, and the side surface of the semiconductor wafer 203 that come into contact with each other during the transportation process. In the case of FIG. 1, a case where a tape coating on the back surface of the wafer is required in a donut shape such as contact with a claw in the carrying process is shown, while in the case of FIG. It shows the case where the entire back surface requires a tape coating, such as contact with a chuck or the like. At this time, as described above,
In order to surely adsorb and remove the foreign matter in the portion that comes into contact with the wafer in the transfer system and each processing section of the apparatus, the range in which the wafer is covered with the tape is set to a wide range so as to cover this contact section. This range varies depending on the device, and an example of the range of the double-sided adhesive tape to be attached to the main surface of the wafer is shown in FIG. FIG. 3 is a third view of a wafer to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed.
FIG. 4A is a top view of the embodiment of FIG. 4A, where FIG. 7A is a case where an adhesive tape is required for a donut-shaped portion around the wafer such as a peripheral perimeter clamp, and FIG. The case where an adhesive tape is required is shown. FIG. 4 is a sectional view of a fourth embodiment of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed. (A) is a sectional view of the entire wafer. , (B) are enlarged sectional views of (A) part. FIG. 4B shows a double-sided adhesive tape having a three-layer structure of an adhesive 402, a support 405, and an adhesive 404, which is a wafer 403.
It is pasted on both sides of. Materials for the support include acetate film (matte finish; Sumitomo 3M), polyethylene terephthalate (PET; Fujicolor), fluororesin, Teflon (registered trademark) resin (Teflon skived tape), etc. In the case where inertness is required, a silicone-based pressure-sensitive adhesive is suitable, but an acrylic-based pressure-sensitive adhesive can be used when gas generation is allowed to some extent in a normal temperature / normal pressure process. When the double-sided body shown in FIG. 4 is attached to a wafer, the peeling strength (f
It is necessary that 1) is equal to or greater than the peel strength (f2) on the outermost surface side, that is, f1 ≧ f2. The reason is f
When 2 is larger than f1, there is a high risk that the double-sided tape itself will peel off and adhere to the contact portion during the transportation process.
This is because it not only defeats the purpose of removing foreign matter but also contaminates the transportation process. In the above example, the double-sided adhesive tape was used, but any other adhesive thin film may be used. Next, as another example, FIG. 5 shows an example in which an adhesive is formed on a wafer by coating. FIG. 5 is a cross-sectional view of an example of a wafer to which an adhesive substance used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed by coating. FIG. 5A is a cross-sectional view of the entire wafer,
(B) and (C) are enlarged cross-sectional views of part (a), (B) is a case where there is one coating layer, and (C) is a case where there are two coating layers. It forms a silicon-based adhesive. As shown in FIG. 5C, the reason why the adhesive layer is formed of two or more layers of adhesives is that the peel strength is f1 in the same manner as above in order to avoid the risk of contamination of the conveying process by the adhesive substance. This is because it is necessary to select the material of each layer so as to satisfy the relationship of ≧ f2 (f1: peel strength of the adhesive on the substrate side, f2: peel strength of the adhesive on the outermost surface side).
As a means for recovering the foreign matter removing ability, for example, O 2
Remove the adhesive with asher or sulfuric acid / hydrogen peroxide treatment and reapply.
【0007】次に、図6を参照して本発明に係る半導体
ウエハ処理装置のクリーニング方法の実施例を詳細に説
明する。半導体基板処理装置は、処理ウエハ603の搬
送の繰り返しにより搬送過程でウエハ603と接触する
部分、つまり搬送経路やウエハ保持用のツメやブレード
のツメ或いはウエハチャック(静電チャック)上にダス
トが溜り発塵の原因になる為、上記粘着性の物質を固着
したウエハ603を処理ウエハの合間にウエハ処理装置
の搬送系に空搬送する。処理を行うウエハ603をウエ
ハカセット601に載せた状態でカセットチャンバー6
02内のカセットホルダー607にセットする。カセッ
トチャンバー602が真空に引かれウエハローディング
チャンバー605との差圧が一定値以下になったところ
でカセットチャンバー602とウエハローディングチャ
ンバー605を隔てているゲートバルブ606が開きウ
エハカセット601はカセットホルダー607とともに
ウエハローディングチャンバー605へ移送される。移
送完了後ゲートバルブ606を閉じる。次にエッチング
チャンバー608とウエハローディングチャンバー60
5を隔てているゲートバルブを開いてウエハカセット6
01にセットされているウエハ603を一枚づつエッチ
ングチャンバー608内に搬送する。以下図7を用いて
ウエハローディングチャンバー605からエッチングチ
ャンバー608へのウエハ603の受け渡し搬送の過程
を説明する。図7(A)のブレード706によりウエハ
カセット701から持ち上げられたウエハ703は、図
7(B)に示した様に、搬送用アーム705のウエハ保
持用のツメ702により保持され、しかるのちブレード
706は元の位置に下がる。次に図7(C)に示した様
に、ウエハ703はゲートバルブ708が開かれた後、
搬送用アーム705によりウエハチャック(静電チャッ
ク)704の直上まで運ばれ、この位置までウエハチャ
ック704が移動することによりウエハはウエハチャッ
ク704にチャッキングされ、ウエハチャック704は
後退する。その後、図7(D)に示した様に、搬送アー
ム705はウエハ703との接触回避の為ウエハローデ
ィングチャンバー605へ移動する。しかるのちにゲー
トバルブ708を閉じ、ウエハのエッチングを開始す
る。処理後の受け渡し搬送は上記の逆の動作により、ウ
エハチャック704からウエハカセット701までウエ
ハ703を搬送する。粘着性物質を固着したダミーウエ
ハ搬送処理の頻度に関しては、処理間隔を時間で管理し
ても良いし、また処理ロット数で管理しても良い。ま
た、クリーニング処理のみの為に搬送しても良い。ま
た、枚数については、他工程から受ける汚染の程度及び
次の空搬送迄の間に処理されるウエハに必要とされる清
浄度のレベルにより決められる。従って、ウエハ数枚毎
に織り込む事も考えられる。この様に、粘着性の物質を
固着したウエハの搬送は、任意の時間に任意の枚数行う
ことが出来る。Next, an embodiment of a cleaning method for a semiconductor wafer processing apparatus according to the present invention will be described in detail with reference to FIG. In the semiconductor substrate processing apparatus, dust is accumulated on a portion that comes into contact with the wafer 603 during the transfer process by repeating the transfer of the processed wafer 603, that is, a transfer path, a claw for holding a wafer, a claw of a blade, or a wafer chuck (electrostatic chuck). Since it causes dust generation, the wafer 603 to which the above-mentioned adhesive substance is fixed is idly transferred to the transfer system of the wafer processing apparatus between processing wafers. With the wafer 603 to be processed placed on the wafer cassette 601, the cassette chamber 6
It is set in the cassette holder 607 in 02. When the cassette chamber 602 is evacuated and the pressure difference between the wafer loading chamber 605 and the wafer loading chamber 605 becomes a certain value or less, the gate valve 606 separating the cassette chamber 602 and the wafer loading chamber 605 is opened, and the wafer cassette 601 is mounted on the wafer holder 607 together with the wafer. Transferred to the loading chamber 605. After the transfer is completed, the gate valve 606 is closed. Next, the etching chamber 608 and the wafer loading chamber 60
Open the gate valve that separates 5 to open the wafer cassette 6
The wafers 603 set to 01 are transferred one by one into the etching chamber 608. The process of transferring and transferring the wafer 603 from the wafer loading chamber 605 to the etching chamber 608 will be described below with reference to FIG. The wafer 703 lifted from the wafer cassette 701 by the blade 706 shown in FIG. 7A is held by the wafer holding tabs 702 of the transfer arm 705 as shown in FIG. 7B, and then the blade 706. Moves back to its original position. Next, as shown in FIG. 7C, after the gate valve 708 is opened, the wafer 703 is
The transfer arm 705 conveys the wafer to a position just above the wafer chuck (electrostatic chuck) 704, and the wafer chuck 704 moves to this position, whereby the wafer is chucked by the wafer chuck 704 and the wafer chuck 704 retracts. Thereafter, as shown in FIG. 7D, the transfer arm 705 moves to the wafer loading chamber 605 to avoid contact with the wafer 703. After that, the gate valve 708 is closed and the wafer etching is started. The transfer and delivery after the processing is the reverse of the above operation, and the wafer 703 is transported from the wafer chuck 704 to the wafer cassette 701. Regarding the frequency of the dummy wafer transfer process to which the adhesive substance is fixed, the process interval may be controlled by time or the number of process lots. Further, it may be conveyed only for cleaning processing. The number of wafers is determined by the degree of contamination received from other processes and the level of cleanliness required for the wafers to be processed before the next empty transfer. Therefore, weaving every few wafers can be considered. As described above, the number of wafers to which the adhesive substance is fixed can be transferred at any time and at any number.
【0008】尚、上記は真空チャンバーを有する処理装
置の場合を上げたが、大気下における処理装置にも適用
できることは言うまでもない。また枚葉式かバッチ式ど
ちらの形態にも適用することが出来るし、フォトマスク
或いはレティクル等ウエハ以外の基板を搬送する装置に
も適用できる。また、基板に貼り付ける粘着性物質は、
上記においては粘着性及びガスの発生を考慮して上記の
様な選択をしたが、装置及び処理基板の必要に応じて耐
熱性,耐水性,耐薬品性,帯油性等、様々な条件が考え
られる為、支持体を含め使用目的に適合した素材を選択
すべきことは言うまでもない。Although the above description has been given to the case of a processing apparatus having a vacuum chamber, it is needless to say that it can be applied to a processing apparatus under the atmosphere. Further, it can be applied to either a single-wafer type or a batch type, and can also be applied to an apparatus for transporting a substrate other than a wafer such as a photomask or a reticle. In addition, the adhesive substance that is attached to the substrate is
In the above, the above selection was made in consideration of adhesiveness and generation of gas, but various conditions such as heat resistance, water resistance, chemical resistance, oil repellency, etc. may be considered depending on the needs of the equipment and the processing substrate. Therefore, it goes without saying that a material suitable for the purpose of use, including the support, should be selected.
【0009】[0009]
【発明の効果】上述した様に本発明のクリーニング用両
面粘着テープを用いれば、ウエハ処理装置の搬送系及び
各処理部における、ウエハに接触する部分の異物を確実
に吸着除去出来る。またその結果、従来行われていたメ
ンテナンスを人が行なう方法に対しては、ウエハの搬送
経路のセミオートクリーニング,インサイチュクリーニ
ングが、高い清浄度レベルで達成される為、オペレータ
ーの負担つまり頻度と労力を大幅に省き、且つ稼働率を
向上する事が可能となる。これは、特に真空系を使った
装置に対して真空系を立ち下げてから分解・洗浄する必
要性等の作業性の差から効果度が高く、将来的には、装
置又はユニットの局所クリーン化を行う際にも、同様の
理由で高い効果度が得られる。また、この方法は任意の
ウエハ枚数間隔でローディングする事が可能であり、ダ
ミーウエハのローディングの頻度を高める事により、搬
送経路のコンタミネーションコントロールのリアルタイ
ム制御が可能となる。また従来のダミーウエハを空搬送
する方法に対しては、使用するダミーウエハの枚数の大
幅な削減が可能となる為、前記ウエハ処理装置の稼働率
を向上する事が出来る。また本発明によれば、装置内清
浄度の信頼性が向上する為、安定した製品歩留りを得る
ことが出来る。As described above, by using the double-sided pressure-sensitive adhesive tape for cleaning according to the present invention, it is possible to surely adsorb and remove the foreign matter in the portion which comes into contact with the wafer in the transfer system and each processing section of the wafer processing apparatus. As a result, as compared with the conventional method of performing maintenance by a person, semi-automatic cleaning and in-situ cleaning of the wafer transfer path can be achieved at a high cleanliness level, which imposes an operator's burden, that is, frequency and labor. It is possible to save a lot and improve the operating rate. This is particularly effective for equipment that uses a vacuum system because of differences in workability, such as the need to disassemble and clean the vacuum system after it has been shut down. In the future, local cleaning of the equipment or unit will be required. When performing, the high degree of effectiveness can be obtained for the same reason. In addition, this method allows loading at an arbitrary number of wafers, and by increasing the frequency of loading dummy wafers, real-time control of contamination control of the transfer path becomes possible. Further, as compared with the conventional method of carrying dummy wafers in an empty manner, the number of dummy wafers to be used can be significantly reduced, so that the operation rate of the wafer processing apparatus can be improved. Further, according to the present invention, the reliability of the in-apparatus cleanliness is improved, so that a stable product yield can be obtained.
【0010】また、本発明においてはダミーウエハに固
着される粘着性の物質に非粘着性の突起状薄膜を固着す
る事により、粘着性の物質を容易に剥がす事が出来る
為、再度の貼り付けが可能となり、粘着性の物質を固着
したダミーウエハの再生利用が可能となる。Further, in the present invention, since the non-adhesive protruding thin film is adhered to the adhesive substance adhered to the dummy wafer, the adhesive substance can be easily peeled off, so that re-adhesion can be performed. This makes it possible to recycle the dummy wafer to which the sticky substance is fixed.
【図1】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの構造体の
一例を示したものであり、(A)は各要素を分離した状
態における斜視図、(B)は断面図ある。FIG. 1 is a view showing an example of a wafer structure to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. 1A is a perspective view showing a state where each element is separated, (B) is a sectional view.
【図2】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの第2の実
施例を示したものであり、(A)は各要素を分離した状
態における斜視図、(B)は断面図ある。FIG. 2 shows a second embodiment of a wafer to which an adhesive tape is used for cleaning a semiconductor substrate processing apparatus according to the present invention, and FIG. 2A is a perspective view showing a state where each element is separated. , (B) are sectional views.
【図3】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの第3の実
施例の上面図であり、(A)はウエハ周辺のドーナッツ
状部分に(B)はウエハ周辺の散在する領域に、各々粘
着テープを必要とする場合を示している。FIG. 3 is a top view of a third embodiment of a wafer to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, where (A) is a donut-shaped portion around the wafer (B). Shows the case where adhesive tapes are required for scattered areas around the wafer.
【図4】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの第4の実
施例の断面図を示したものであり、(A)はウエハ全体
の断面図、(B)は(A)a部の拡大断面図である。FIG. 4 is a cross-sectional view of a fourth embodiment of a wafer to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, (A) is a cross-sectional view of the entire wafer, (B) is an enlarged cross-sectional view of (A) part.
【図5】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性の物質を塗布により固着したウエハの
一例の断面図を示したものであり、(A)はウエハ全体
の断面図、(B)(C)は(A)a部の断面図で、
(B)は塗布層が一層、(C)は塗布層が2層の場合で
ある。FIG. 5 is a cross-sectional view of an example of a wafer to which an adhesive substance used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed by coating, (A) is a cross-sectional view of the entire wafer, and (B) is a cross-sectional view. ) (C) is a sectional view of (A) a part,
(B) is the case where the coating layer is one layer, and (C) is the case where the coating layer is two layers.
【図6】本発明の一実施例に則した半導体基板処理装置
のクリーニングを行う装置概略構成における断面図であ
る。FIG. 6 is a cross-sectional view of a schematic configuration of an apparatus for cleaning a semiconductor substrate processing apparatus according to an embodiment of the present invention.
【図7】本発明の一実施例に則した半導体基板処理装置
のクリーニングを行う装置のウエハ搬送にかかわる内部
構造図であり、(A)(B)(C)(D)はウエハがロ
ーディングされる過程におけるシーケンス経過毎の状態
を示している。FIG. 7 is an internal structure diagram relating to wafer transfer of an apparatus for cleaning a semiconductor substrate processing apparatus according to an embodiment of the present invention, in which (A), (B), (C), and (D) are loaded with wafers. 2 shows the state of each sequence in the process.
【図8】従来の一般的なウエハ搬送系の斜視図である。FIG. 8 is a perspective view of a conventional general wafer transfer system.
101 201 301 401 501:ウエハ主面
に貼り付ける両面粘着テープ
102 202:両面粘着テープ剥離用非粘着部
103 203 403 503 603 703:半
導体ウエハ
104 204:ウエハ裏面に貼り付ける両面粘着テー
プ
105 205:ウエハ側面に貼り付ける両面粘着テー
プ
301:ウエハ表面のテープ貼り付け範囲
302:ウエハ端部
401:両面テープ
402 502:粘着剤1
404 504:粘着剤2
405 505:支持体
601 701:ウエハカセット
602:カセットチャンバー
604 704:ウエハチャック
605:ウエハローディングチャンバー
606 708:ゲートバルブ
607:カセットホルダー
608:エッチングチャンバー
702:ウエハ保持用ツメ
705:ウエハ搬送アーム
706:ウエハ搬送用ブレード
707:ウエハ搬送用ブレードのツメ
709:チャンバー壁
801:ベルト
802:プーリー
804:駆動モーター
805:ローラー
806:搬送アーム
807:ウエハ接触面
808:バキューム穴
809:スライドボックス
810:スライドステージ101 201 301 401 501: Double-sided adhesive tape 102 attached to the main surface of wafer 102 202: Non-adhesive part for peeling double-sided adhesive tape 103 203 403 503 603 703: Semiconductor wafer 104 204: Double-sided adhesive tape 105 205: Wafer attached to back surface of wafer Double-sided adhesive tape 301 to be attached to the side surface: Tape attachment range 302 on wafer surface: Wafer edge 401: Double-sided tape 402 502: Adhesive 1 404 504: Adhesive 2 405 505: Support 601 701: Wafer cassette 602: Cassette Chamber 604 704: Wafer chuck 605: Wafer loading chamber 606 708: Gate valve 607: Cassette holder 608: Etching chamber 702: Wafer holding tab 705: Wafer transfer arm 706: W Ha transfer blade 707: wafer transfer blade claw 709: chamber wall 801: Belt 802: Pulley 804: drive motor 805: Roller 806: transfer arm 807: wafer contact surface 808: Vacuum holes 809: slide box 810: slide stage
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5F031 CA11 DA01 DA20 EA01 EA02 FA01 FA03 FA11 FA12 GA12 GA55 HA16 HA45 HA57 MA32 NA05 NA07 PA02 PA07 PA23 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 5F031 CA11 DA01 DA20 EA01 EA02 FA01 FA03 FA11 FA12 GA12 GA55 HA16 HA45 HA57 MA32 NA05 NA07 PA02 PA07 PA23
Claims (19)
持体の両面に粘着剤層が形成された両面粘着テープを固
着したクリーニング用基板を用い、半導体基板を搬送す
る機構を備えた半導体基板処理装置の半導体基板通過経
路に該クリーニング用基板を搬送し、該クリーニング用
基板の自重を利用して半導体デバイスに欠陥を生じさせ
る異物を除去することによって半導体基板の製造歩留ま
りを向上させることを特徴とする半導体基板処理装置の
クリーニング方法。1. A semiconductor substrate provided with a mechanism for transporting a semiconductor substrate, comprising a cleaning substrate having a double-sided adhesive tape having an adhesive layer formed on both sides of a support on at least a part of a back surface of the semiconductor substrate. It is characterized in that the cleaning substrate is conveyed to a semiconductor substrate passing path of a processing apparatus, and the self-weight of the cleaning substrate is used to remove foreign substances that cause defects in semiconductor devices, thereby improving the manufacturing yield of semiconductor substrates. A method for cleaning a semiconductor substrate processing apparatus.
体の両面に粘着剤層が形成された両面粘着テープを固着
したクリーニング用基板を用いて、該半導体基板処理装
置の半導体基板を搬送する機構、該半導体基板に所要の
処理を施す機構、およびその後該半導体基板を搬送する
機構の一連の半導体基板通過経路に該クリーニング用基
板を搬送し、該クリーニング用基板の自重を利用して半
導体デバイスに欠陥を生じさせる異物を除去することに
よって半導体基板の製造歩留まりを向上させることを特
徴とする半導体基板処理装置のクリーニング方法。2. A semiconductor substrate of a semiconductor substrate processing apparatus is conveyed by using a cleaning substrate having a double-sided adhesive tape having an adhesive layer formed on both sides of a support on at least a part of the back surface of the semiconductor substrate. Mechanism, a mechanism for performing a required treatment on the semiconductor substrate, and a mechanism for transporting the semiconductor substrate, and then the cleaning substrate is conveyed to a series of semiconductor substrate passages, and a semiconductor device utilizing the dead weight of the cleaning substrate is used. A method for cleaning a semiconductor substrate processing apparatus, characterized in that the manufacturing yield of semiconductor substrates is improved by removing foreign matter that causes defects in the semiconductor substrate.
体の両面に粘着剤層が形成された両面粘着テープを固着
したクリーニング用基板を、半導体基板処理装置におけ
る半導体基板を半導体基板搬入部から半導体基板処理部
まで搬送する搬送系、該半導体基板処理部、および該半
導体基板を該半導体基板処理部から搬出部まで搬送する
搬送系の一連の半導体基板通過経路に搬送し、該クリー
ニング用基板の自重を利用して半導体デバイスに欠陥を
生じさせる異物を除去することによって半導体基板の製
造歩留まりを向上させることを特徴とする半導体基リー
ニング方法。3. A cleaning substrate having a double-sided pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer formed on both sides of a support on at least a part of the back surface of the semiconductor substrate, the semiconductor substrate in a semiconductor substrate processing apparatus being transferred from a semiconductor substrate loading section. A transport system for transporting to the semiconductor substrate processing section, the semiconductor substrate processing section, and the semiconductor substrate are transported to a series of semiconductor substrate passing paths of a transport system for transporting from the semiconductor substrate processing section to the unloading section, and the cleaning substrate A semiconductor-based leaning method, characterized in that the manufacturing yield of a semiconductor substrate is improved by removing foreign matter that causes defects in a semiconductor device by utilizing its own weight.
持体の両面に粘着剤層を形成した両面粘着テープを固着
したクリーニング用基板を、半導体基板処理装置を用い
て所定の処理を施す処理基板の合間に、該半導体基板処
理装置の半導体基板通過経路に空搬送し、該クリーニン
グ用基板の自重を利用して半導体デバイスに欠陥を生じ
させる異物を除去することによって半導体基板の製造歩
留まりを向上させることを特徴とする半導体基板処理装
置のクリーニング方法。4. A process for applying a predetermined process using a semiconductor substrate processing apparatus to a cleaning substrate having a double-sided adhesive tape having a pressure-sensitive adhesive layer formed on both sides of a support on at least a part of the back surface of the semiconductor substrate. Improving the manufacturing yield of a semiconductor substrate by idly carrying it to a semiconductor substrate passing path of the semiconductor substrate processing apparatus between the substrates and removing foreign matters that cause defects in semiconductor devices by using the self-weight of the cleaning substrate. A method for cleaning a semiconductor substrate processing apparatus, comprising:
持体の両面に粘着剤層が形成され、該半導体基板固着側
粘着剤層の剥離強度を該半導体基板処理装置部材接触側
粘着剤層の剥離強度と同等かもしくはこれより大きいこ
ととした両面粘着テープを固着したクリーニング用基板
を用いて、半導体基板を搬送する機構を備えた半導体基
板処理装置の半導体基板通過経路に前記クリーニング用
基板を搬送し、該クリーニング用基板の自重を利用して
半導体デバイスに欠陥を生じさせる異物を除去すること
によって半導体基板の製造歩留まりを向上させることを
特徴とする半導体基板処理装置のクリーニング方法。5. A pressure-sensitive adhesive layer is formed on both sides of a support on at least a part of the back surface of the semiconductor substrate, and the peel strength of the pressure-sensitive adhesive layer on the semiconductor substrate fixing side is adjusted to the semiconductor substrate processing device member contact side pressure-sensitive adhesive layer. Using a cleaning substrate with a double-sided adhesive tape adhered, which has a peel strength equal to or greater than the peel strength, the cleaning substrate is placed in a semiconductor substrate passage of a semiconductor substrate processing apparatus equipped with a mechanism for transporting the semiconductor substrate. A method for cleaning a semiconductor substrate processing apparatus, which comprises transporting and using a self-weight of the cleaning substrate to remove foreign matter that causes a defect in a semiconductor device, thereby improving a manufacturing yield of the semiconductor substrate.
法において、両面粘着テープとして、支持体の両面に粘
着剤層が形成され、前記基板固着側粘着剤層の剥離強度
を前記半導体基板処理装置部材接触側粘着剤層の剥離強
度より大きいこととした両面粘着テープを用いることを
特徴とする請求項5記載の半導体基板処理装置のクリー
ニング方法。6. The method for cleaning a semiconductor substrate processing apparatus, wherein a pressure sensitive adhesive layer is formed on both surfaces of a support as a double-sided pressure sensitive adhesive tape, and the peel strength of the substrate fixing side pressure sensitive adhesive layer is adjusted to the semiconductor substrate processing apparatus member contact. The method for cleaning a semiconductor substrate processing apparatus according to claim 5, wherein a double-sided adhesive tape having a peel strength greater than that of the side adhesive layer is used.
れる半導体基板処理装置であることを特徴とする請求項
5または請求項6のいずれかに記載の半導体基板処理装
置のクリーニング方法。7. The method for cleaning a semiconductor substrate processing apparatus according to claim 5, wherein the semiconductor substrate processing apparatus is a semiconductor substrate processing apparatus maintained in a vacuum.
持体の両面にアクリル系粘着剤層が形成された両面粘着
テープを固着したクリーニング用基板を用いて、半導体
基板を搬送する機構を備えた半導体基板処理装置の半導
体基板通過経路に該クリーニング用基板を搬送し、該ク
リーニング用基板の自重を利用して半導体デバイスに欠
陥を生じさせる異物を除去することによって半導体基板
の製造歩留まりを向上させることを特徴とする半導体基
板処理装置のクリーニング方法。8. A mechanism for transporting a semiconductor substrate using a cleaning substrate having a double-sided pressure-sensitive adhesive tape having an acrylic pressure-sensitive adhesive layer formed on both sides of a support on at least a part of the back surface of the semiconductor substrate. The cleaning substrate is conveyed to the semiconductor substrate passage of the semiconductor substrate processing apparatus, and the self-weight of the cleaning substrate is used to remove foreign matters that cause defects in semiconductor devices, thereby improving the manufacturing yield of the semiconductor substrate. A method for cleaning a semiconductor substrate processing apparatus, comprising:
トを主材料とするものであることを特徴とする請求項8
記載の半導体基板処理装置のクリーニング方法。9. The support is composed mainly of polyethylene terephthalate.
A method for cleaning a semiconductor substrate processing apparatus as described above.
ポリエチレンテレフタレートを主材料とする支持体の両
面にアクリル系粘着剤層が形成され、該基板固着側粘着
剤層の剥離強度を該基板処理装置部材接触側粘着剤層の
剥離強度と同等かもしくはこれより大きいこととした両
面粘着テープを固着したクリーニング用基板を用いて、
半導体基板を搬送する機構を備えた半導体基板処理装置
の半導体基板通過経路に該クリーニング用基板を搬送
し、該クリーニング用基板の自重を利用して半導体デバ
イスに欠陥を生じさせる異物を除去することによって半
導体基板の製造歩留まりを向上させることを特徴とする
半導体基板処理装置のクリーニング方法。10. A semiconductor substrate on at least a part of a back surface thereof,
Acrylic pressure-sensitive adhesive layers are formed on both sides of a support mainly composed of polyethylene terephthalate, and the peel strength of the substrate fixing side pressure sensitive adhesive layer is equal to or higher than the peeling strength of the substrate processing apparatus member contact side pressure sensitive adhesive layer. Using a cleaning substrate with a double-sided adhesive tape fixed to be larger,
By transporting the cleaning substrate to the semiconductor substrate passage of the semiconductor substrate processing apparatus having a mechanism for transporting the semiconductor substrate, and using the self-weight of the cleaning substrate to remove foreign matters that cause defects in the semiconductor device. A method of cleaning a semiconductor substrate processing apparatus, characterized by improving the manufacturing yield of a semiconductor substrate.
粘着剤層が形成され、該基板固着側粘着剤層の剥離強度
を該基板処理装置部材接触側粘着剤層の剥離強度がこれ
より大きいこととした両面粘着テープであることを特徴
とする請求項10記載の半導体基板処理装置のクリーニ
ング方法。11. The double-sided pressure-sensitive adhesive tape has pressure-sensitive adhesive layers formed on both sides of a support, and the peel strength of the pressure-sensitive adhesive layer on the substrate-fixing side is higher than that of the pressure-sensitive adhesive layer on the substrate-processing device member contact side. 11. The method for cleaning a semiconductor substrate processing apparatus according to claim 10, wherein the double-sided adhesive tape is large.
リエチレンテレフタレートを主材料とする支持体の両面
にアクリル系粘着剤層が形成された両面粘着テープを固
着したクリーニング用基板を用いて、半導体基板処理装
置の半導体基板を搬送する機構、半導体基板に所要の処
理を施す機構、およびその後半導体基板を搬送する機構
の一連の半導体基板通過経路に該クリーニング用基板を
搬送して、該半導体基板処理装置をクリーニングし、該
クリーニング用基板の自重を利用して半導体デバイスに
欠陥を生じさせる異物を除去することによって半導体基
板の製造歩留まりを向上させることを特徴とする半導体
基板処理装置のクリーニング方法。12. A semiconductor substrate using a cleaning substrate having a double-sided adhesive tape having an acrylic adhesive layer formed on both sides of a support containing polyethylene terephthalate as a main material on at least a part of the back surface of the semiconductor substrate. The semiconductor substrate processing apparatus transfers the cleaning substrate to a series of semiconductor substrate passing paths of a mechanism for transferring a semiconductor substrate of a processing apparatus, a mechanism for performing a required processing on the semiconductor substrate, and a mechanism for transferring the semiconductor substrate thereafter. A cleaning method for a semiconductor substrate processing apparatus, comprising: cleaning a semiconductor substrate and removing foreign matter that causes a defect in a semiconductor device by utilizing the weight of the cleaning substrate.
リエチレンテレフタレートを主材料とする支持体の両面
にアクリル系粘着剤層が形成された両面粘着テープを固
着したクリーニング用基板を、半導体基板処理装置にお
ける半導体基板を半導体基板搬入部から半導体基板処理
部まで搬送する搬送系、該半導体基板処理部、および半
導体基板を該半導体基板処理部から搬出部まで搬送する
搬送系の一連の半導体基板通過経路に搬送して、該半導
体基板処理装置をクリーニングし、該クリーニング用基
板の自重を利用して半導体デバイスに欠陥を生じさせる
異物を除去することによって半導体基板の製造歩留まり
を向上させることを特徴とする半導体基板処理装置のク
リーニング方法。13. A semiconductor substrate processing apparatus comprising a cleaning substrate having a double-sided adhesive tape having an acrylic adhesive layer formed on both sides of a support containing polyethylene terephthalate as a main material on at least a part of the back surface of the semiconductor substrate. In a series of semiconductor substrate passage paths of a transport system for transporting the semiconductor substrate from the semiconductor substrate loading unit to the semiconductor substrate processing unit, the semiconductor substrate processing unit, and a transport system for transporting the semiconductor substrate from the semiconductor substrate processing unit to the unloading unit. A semiconductor characterized by improving the manufacturing yield of a semiconductor substrate by transporting and cleaning the semiconductor substrate processing apparatus and removing foreign matter that causes a defect in a semiconductor device by utilizing the weight of the cleaning substrate. A method for cleaning a substrate processing apparatus.
ポリエチレンテレフタレートを主材料とする支持体の両
面にアクリル系粘着剤層を形成した両面粘着テープを固
着したクリーニング用基板を、半導体基板処理装置を用
いて所定の処理を施す処理基板の合間に、該半導体基板
処理装置の半導体基板通過経路に空搬送し、該クリーニ
ング用基板の自重を利用して半導体デバイスに欠陥を生
じさせる異物を除去することによって半導体基板の製造
歩留まりを向上させることを特徴とする半導体基板処理
装置のクリーニング方法。14. At least a part of the back surface of the semiconductor substrate,
A cleaning substrate having a double-sided adhesive tape having an acrylic pressure-sensitive adhesive layer formed on both sides of a support containing polyethylene terephthalate as a main material is fixed between the substrates to be subjected to a predetermined process using a semiconductor substrate processing apparatus. The present invention is characterized in that the manufacturing yield of semiconductor substrates is improved by carrying out empty conveyance to a semiconductor substrate passage of a semiconductor substrate processing apparatus and removing foreign matters that cause defects in semiconductor devices by utilizing the weight of the cleaning substrate. Cleaning method for semiconductor substrate processing apparatus.
支持体の両面に粘着剤層が形成され、該基板固着側粘着
剤層の剥離強度を該半導体基板処理装置部材接触側粘着
剤層の剥離強度と同等かもしくはこれより大きいことと
した両面粘着テープを固着したクリーニング用基板を用
いて、半導体基板を搬送する機構を備えた半導体基板処
理装置の基板通過経路に該クリーニング用基板を搬送し
て該半導体基板処理装置をクリーニングし、該クリーニ
ング用基板の自重を利用して半導体デバイスに欠陥を生
じさせる異物を除去することによって半導体基板の製造
歩留まりを向上させることを特徴とする半導体基板処理
装置のクリーニング方法。15. At least a part of the back surface of the semiconductor substrate,
A double-sided pressure-sensitive adhesive tape in which a pressure-sensitive adhesive layer is formed on both sides of a support, and the peeling strength of the substrate-fixing-side pressure-sensitive adhesive layer is equal to or larger than the peeling strength of the semiconductor-substrate processing apparatus member contact-side pressure-sensitive adhesive layer. By using the cleaning substrate having the fixed substrate, the cleaning substrate is transported to the substrate passage path of the semiconductor substrate processing apparatus having a mechanism for transporting the semiconductor substrate to clean the semiconductor substrate processing apparatus, and the cleaning substrate A method for cleaning a semiconductor substrate processing apparatus, characterized in that a manufacturing yield of a semiconductor substrate is improved by removing foreign matter which causes a defect in a semiconductor device by utilizing its own weight.
着側粘着剤層の剥離強度が該半導体基板処理装置部材接
触側粘着剤層の剥離強度より大きい両面粘着テープを用
いたことを特徴とする請求項15記載の半導体基板処理
装置のクリーニング方法。16. The double-sided pressure-sensitive adhesive tape is characterized in that a double-sided pressure-sensitive adhesive tape having a peeling strength of the substrate-fixing-side pressure-sensitive adhesive layer higher than a peeling strength of the semiconductor-substrate-processing-device-member-contact-side pressure-sensitive adhesive layer is used. Item 16. A method for cleaning a semiconductor substrate processing apparatus according to Item 15.
される半導体基板処理装置であることを特徴とする請求
項15または請求項16のいずれかに記載の半導体基板
処理装置のクリーニング方法。17. The method for cleaning a semiconductor substrate processing apparatus according to claim 15, wherein the semiconductor substrate processing apparatus is a semiconductor substrate processing apparatus maintained in a vacuum.
体基板の裏面の範囲が、クリーニング対象となる前記半
導体処理装置の搬送系または処理部と前記クリーニング
用基板との接触部を包括する該半導体基板の裏面の範囲
であることを特徴とする請求項1ないし請求項17に記
載の半導体処理装置の製造方法。18. The semiconductor substrate in which the range of the back surface of the semiconductor substrate on which the double-sided adhesive tape is formed covers the contact portion between the cleaning system and the transport system or processing unit of the semiconductor processing apparatus to be cleaned. 18. The method for manufacturing a semiconductor processing apparatus according to claim 1, wherein the range is the back surface of the semiconductor processing apparatus.
支持体の両面に粘着剤層が形成された両面粘着テープを
固着したクリーニング用基板を用い、半導体基板を搬送
する機構を備えた半導体基板処理装置の半導体基板通過
経路に該クリーニング用基板を搬送することを特徴とす
る半導体処理装置のクリーニング方法。19. At least a part of the back surface of the semiconductor substrate,
A cleaning substrate having a double-sided adhesive tape having an adhesive layer formed on both sides of a support is used, and the cleaning substrate is conveyed to a semiconductor substrate passage of a semiconductor substrate processing apparatus having a mechanism for conveying the semiconductor substrate. A method for cleaning a semiconductor processing apparatus, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002296731A JP2003209034A (en) | 2002-10-09 | 2002-10-09 | Cleaning method of semiconductor substrate treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002296731A JP2003209034A (en) | 2002-10-09 | 2002-10-09 | Cleaning method of semiconductor substrate treatment device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31153596A Division JPH10154686A (en) | 1996-11-22 | 1996-11-22 | Method of cleaning semiconductor substrate processing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003209034A true JP2003209034A (en) | 2003-07-25 |
Family
ID=27655724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002296731A Abandoned JP2003209034A (en) | 2002-10-09 | 2002-10-09 | Cleaning method of semiconductor substrate treatment device |
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Country | Link |
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JP (1) | JP2003209034A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140047150A (en) * | 2011-09-05 | 2014-04-21 | 가부시끼가이샤 도시바 | Reticle chuck cleaner and reticle chuck cleaning method |
-
2002
- 2002-10-09 JP JP2002296731A patent/JP2003209034A/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140047150A (en) * | 2011-09-05 | 2014-04-21 | 가부시끼가이샤 도시바 | Reticle chuck cleaner and reticle chuck cleaning method |
KR101583167B1 (en) * | 2011-09-05 | 2016-01-07 | 가부시끼가이샤 도시바 | Reticle chuck cleaner and reticle chuck cleaning method |
US9808841B2 (en) | 2011-09-05 | 2017-11-07 | Toshiba Memory Corporation | Reticle chuck cleaner and reticle chuck cleaning method |
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