JP2003179196A - Power module and protection system thereof - Google Patents
Power module and protection system thereofInfo
- Publication number
- JP2003179196A JP2003179196A JP2001379232A JP2001379232A JP2003179196A JP 2003179196 A JP2003179196 A JP 2003179196A JP 2001379232 A JP2001379232 A JP 2001379232A JP 2001379232 A JP2001379232 A JP 2001379232A JP 2003179196 A JP2003179196 A JP 2003179196A
- Authority
- JP
- Japan
- Prior art keywords
- power
- thermoelectric
- module
- thermoelectric module
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 59
- 230000017525 heat dissipation Effects 0.000 claims description 29
- 239000003566 sealing material Substances 0.000 claims description 4
- 238000013021 overheating Methods 0.000 abstract description 12
- 230000001681 protective effect Effects 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 17
- 238000001816 cooling Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000005678 Seebeck effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 241000255777 Lepidoptera Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パワー変換回路の
スイッチとして使用されるパワーエレクトロニクス回路
用パワーモジュールおよびこのパワーモジュールの保護
システムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module for a power electronic circuit used as a switch of a power conversion circuit and a protection system for this power module.
【０００２】[0002]
【従来の技術】従来のパワーモジュールの外観の斜視図
を図６に、上部から見た内部構成図を図７に、そのＡ−
Ａ断面図を図８に、その回路図を図９にそれぞれ示す。
図６〜図９において、１はＣｕ等からなる金属製の放熱
板であり、下面にヒートシンクが固着されて冷却され
る。２はセラミクス等からなる絶縁基板であり、両面に
放熱板１と同じ材質の金属をロー付けしてあり、半田付
け等により放熱板１に固着してある。３は絶縁基板２の
上面に設けた回路配線である。４は半田で、５は半田４
を介して回路配線３上に固着された、スイッチングを行
うＩＧＢＴ等の半導体からなるパワー素子である。パワ
ー素子５には、図示しない外部の負荷に対して図示しな
い外部の電源の正極を接続／遮断するＰ側パワー素子５
ａと負極を接続／遮断するＮ側パワー素子５ｂがある。
６はパワー素子５のスイッチングによって生じる還流電
流を通電するための還流ダイオードである。還流ダイオ
ード６は、パワー素子５と同様に半田４を介して回路配
線３上に固着されており、正極へ電流を還流するＰ側還
流ダイオード６ａと負極から電流を還流するＮ側還流ダ
イオード６ｂとがある。７はパワー素子５の温度に近い
絶縁基板２の温度を検出するサーミスタであり、その両
端を半田４により回路配線３に固着されている。８は図
示しない外部の電源と負荷を接続するための電極であ
り、電源の正極に接続されるＰ側電極８ａ、負極に接続
されるＮ側電極８ｂ、負荷に接続される負荷側電極８ｃ
がある。９は図示しない外部の制御回路と接続される信
号電極であり、パワー素子５にスイッチング信号を伝え
るためにパワー素子５のゲートとエミッタに接続される
ゲート電極９ａとエミッタ電極９ｂ、サーミスタ７から
の過熱信号を外部の制御回路へ伝達するための温度検出
電極９ｃがある。１０はＡｌ等からなる配線用のワイヤ
であり、ボンディングによってその端部をパワー素子５
や還流ダイオード６に固着されており、パワー素子５と
還流ダイオード６、パワー素子５と信号電極９、回路配
線３と電極８、サーミスタ７と温度検出電極９ｃ等を電
気的に接続している。１１は樹脂からなるケースであり
内面側と上面側に端部が突出するように電極８と信号電
極９を内部に埋め込んであり、下面を放熱板１に接着剤
等で固着してある。１２はケース１１内部に充填される
シリコーン等からなる絶縁性の充填材であり、ケース１
１内部の絶縁性保持およびワイヤ１０の機械的保持を行
っている。１３は蓋であり、ケース１１に接着剤等で固
着されている。2. Description of the Related Art FIG. 6 shows a perspective view of the appearance of a conventional power module, FIG. 7 shows an internal configuration view from above, and FIG.
FIG. 8 shows a sectional view taken along line A, and FIG. 9 shows a circuit diagram thereof.
6 to 9, reference numeral 1 denotes a metal heat radiating plate made of Cu or the like, and a heat sink is fixed to the lower surface to cool it. Reference numeral 2 denotes an insulating substrate made of ceramics or the like, and a metal of the same material as that of the heat dissipation plate 1 is brazed on both sides, and fixed to the heat dissipation plate 1 by soldering or the like. Reference numeral 3 is a circuit wiring provided on the upper surface of the insulating substrate 2. 4 is solder and 5 is solder 4
It is a power element fixed on the circuit wiring 3 via a semiconductor element such as an IGBT for switching. The power element 5 is a P-side power element 5 for connecting / disconnecting a positive electrode of an external power source (not shown) to an external load (not shown).
There is an N-side power element 5b that connects / blocks a and the negative electrode.
Reference numeral 6 is a return diode for supplying a return current generated by switching of the power element 5. Similar to the power element 5, the freewheeling diode 6 is fixed on the circuit wiring 3 via the solder 4, and has a P-side freewheeling diode 6a that returns a current to the positive electrode and an N-side freewheeling diode 6b that returns a current from the negative electrode. There is. Reference numeral 7 is a thermistor for detecting the temperature of the insulating substrate 2 close to the temperature of the power element 5, and both ends thereof are fixed to the circuit wiring 3 by the solder 4. Reference numeral 8 denotes an electrode for connecting a load to an external power source (not shown), a P-side electrode 8a connected to the positive electrode of the power source, an N-side electrode 8b connected to the negative electrode, and a load-side electrode 8c connected to the load.
There is. Reference numeral 9 is a signal electrode connected to an external control circuit (not shown), and a gate electrode 9a and an emitter electrode 9b connected to the gate and emitter of the power element 5 for transmitting a switching signal to the power element 5 and a thermistor 7 There is a temperature detection electrode 9c for transmitting the overheat signal to an external control circuit. Reference numeral 10 is a wiring wire made of Al or the like, the end of which is bonded to the power element 5 by bonding.
The power element 5 and the free wheel diode 6 are electrically connected to each other, and the power element 5 and the free wheel diode 6 are electrically connected to each other, the power element 5 and the signal electrode 9, the circuit wiring 3 and the electrode 8, and the thermistor 7 and the temperature detection electrode 9c. Reference numeral 11 denotes a case made of resin, in which the electrode 8 and the signal electrode 9 are embedded so that the end portions project to the inner surface side and the upper surface side, and the lower surface is fixed to the heat dissipation plate 1 with an adhesive or the like. Reference numeral 12 is an insulative filler made of silicone or the like filled in the case 11.
1 holds the insulation inside and holds the wire 10 mechanically. Reference numeral 13 denotes a lid, which is fixed to the case 11 with an adhesive or the like.
【０００３】次に、このような従来のパワーモジュール
の電気的動作を図６〜図９を用いて説明する。図示しな
い外部の制御回路から入力される制御信号は、信号電極
９、ワイヤ１０を介してパワー素子５に伝えられ、Ｐ側
パワー素子５ａとＮ側パワー素子５ｂが交互にＯＮ／Ｏ
ＦＦのスイッチ動作を行う。その結果、図示しない外部
の電源がパワー素子５によって負荷と接続／遮断されて
負荷に電力が供給される。この時、Ｐ側パワー素子５ａ
とＮ側パワー素子５ｂが同時にＯＮすると電源短絡とな
るため、これを避けるため制御信号にはスイッチＯＮを
遅らせるオンディレイ時間が設けてある。オンディレイ
期間中パワー素子５はどちらもＯＦＦとなっている。そ
のため、オンディレイ期間中は電源から負荷への電流は
Ｎ側還流ダイオード６ｂを介して流れ、負荷から電源へ
の電流はＰ側還流ダイオード６ａを介して流れる。ここ
で、パワー素子５および還流ダイオード６にはオン電圧
があるため、電流を通電すると素子自身に通電ロスを生
じるとともに、ＯＮ／ＯＦＦのスイッチング時にはスイ
ッチングロスが生じる結果、パワー素子５と還流ダイオ
ード６が発熱する。その熱は、絶縁基板２を介して放熱
板１へ伝わり外部へ放熱されると同時にサーミスタ７を
温めるため、外部の制御回路においてサーミスタの抵抗
値の変化を監視することでパワー素子５の温度を検出す
ることができる。これにより、パワー素子５が過熱した
場合はＰ側パワー素子５ａとＮ側パワー素子５ｂを両方
ともＯＦＦしてパワー素子５の過熱による破壊から保護
している。Next, the electrical operation of such a conventional power module will be described with reference to FIGS. A control signal input from an external control circuit (not shown) is transmitted to the power element 5 via the signal electrode 9 and the wire 10, and the P-side power element 5a and the N-side power element 5b are alternately turned ON / O.
Performs FF switch operation. As a result, an external power source (not shown) is connected to / disconnected from the load by the power element 5 to supply power to the load. At this time, the P-side power element 5a
When both the N-side power element 5b and the N-side power element 5b are turned on at the same time, a power supply short circuit occurs. Therefore, in order to avoid this, an on-delay time for delaying the switch on is provided in the control signal. Both of the power elements 5 are off during the on-delay period. Therefore, during the on-delay period, the current from the power supply to the load flows through the N-side freewheeling diode 6b, and the current from the load to the power supply flows through the P-side freewheeling diode 6a. Here, since the power element 5 and the free wheeling diode 6 have an ON voltage, when a current is applied, an energization loss occurs in the element itself and a switching loss occurs at the time of ON / OFF switching. Heats up. The heat is transmitted to the heat sink 1 through the insulating substrate 2 and is radiated to the outside, and at the same time heats the thermistor 7, so that the temperature of the power element 5 can be controlled by monitoring the change in the resistance value of the thermistor in an external control circuit. Can be detected. As a result, when the power element 5 is overheated, both the P-side power element 5a and the N-side power element 5b are turned off to protect the power element 5 from damage due to overheating.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
パワーモジュールでは、パワー素子５の温度検出を行う
サーミスタ７を回路配線や絶縁上の制約からパワー素子
５から離れた絶縁基板２の端部にしか配置できない。こ
のため、パワー素子５の正確な温度を検出できない上、
パワー素子５が過熱してからサーミスタ７で検出するま
でに時間がかかり、パワー素子５の温度が急に上昇した
場合過熱検出が遅れてパワー素子５が熱暴走して破壊し
てしまうという問題があった。また、パワー素子５と半
田４と絶縁基板３はそれぞれ熱膨張率が異なるため、通
電の発熱によるパワー素子５の寸法変化量と絶縁基板３
の寸法変化量とは異なる。このため、半田３は絶縁基板
３側の寸法はほとんど変化しないのに対し、パワー素子
５側では横方向への引っ張られて応力が加わる。その結
果、パワー素子５の間欠通電による発熱と放熱が繰り返
されることで、半田３には繰り返し応力が加わって、半
田３内部に亀裂が入ったりパワー素子５または絶縁基板
３との接合面に剥離を生じたりする。この結果、パワー
素子５と絶縁基板３間の熱伝達率が悪化してパワー素子
５の放熱ができなくなり、パワー素子５が熱暴走して破
壊してしまうという問題があった。したがって本発明の
目的は、パワー素子の過熱を即座に正確に検出し、さら
にパワー素子５を冷却して温度調節することでパワー素
子を破壊させない、信頼性の高いパワーモジュールおよ
びその保護システムを提供することである。However, in the conventional power module, the thermistor 7 for detecting the temperature of the power element 5 is provided only at the end of the insulating substrate 2 which is distant from the power element 5 due to restrictions on circuit wiring and insulation. Cannot be placed. Therefore, the accurate temperature of the power element 5 cannot be detected, and
It takes time until the thermistor 7 detects after the power element 5 overheats, and when the temperature of the power element 5 suddenly rises, the overheat detection is delayed and the power element 5 is thermally runaway and destroyed. there were. Since the power element 5, the solder 4, and the insulating substrate 3 have different thermal expansion coefficients, the amount of dimensional change of the power element 5 due to heat generated by energization and the insulating substrate 3 are different.
Is different from the dimensional change. Therefore, the dimensions of the solder 3 on the insulating substrate 3 side hardly change, but on the power element 5 side, stress is applied by being pulled in the lateral direction. As a result, the heat generation and the heat radiation due to the intermittent energization of the power element 5 are repeated, so that stress is repeatedly applied to the solder 3, and cracks are generated inside the solder 3 or peeled off on the joint surface with the power element 5 or the insulating substrate 3. May occur. As a result, there is a problem that the heat transfer coefficient between the power element 5 and the insulating substrate 3 is deteriorated and the power element 5 cannot be radiated, and the power element 5 is thermally runaway and destroyed. Therefore, an object of the present invention is to provide a highly reliable power module and a protection system thereof, which immediately and accurately detect overheating of a power element and further prevent the power element from being destroyed by cooling the power element 5 to adjust its temperature. It is to be.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するた
め、請求項１記載のパワーモジュールの発明は、金属製
の放熱板と、前記放熱板上に固着された絶縁基板と、前
記絶縁基板に固着されたパワー素子と、を備えたパワー
エレクトロニクス回路用パワーモジュールにおいて、熱
電変換する熱電半導体素子の両面に絶縁基板を設けた熱
電モジュールを前記パワー素子に密着若しくは近接した
位置に配置し、前記熱電モジュールの出力値を判定する
判定回路および前記熱電モジュールへ電力を供給する保
護回路に接続するための外部端子を前記熱電モジュール
に設けたことを特徴とする。請求項２記載の発明は、請
求項１記載のパワーモジュールにおいて、前記熱電モジ
ュールの外周にシール材を設けたことを特徴とする。請
求項３記載の発明は、請求項１記載のパワーモジュール
において、前記熱電モジュールを前記放熱板の外側面に
設けたことを特徴とする。請求項４記載の発明は、請求
項３記載のパワーモジュールにおいて、前記放熱板の外
側面に凹部を設け、その凹部に前記熱電モジュールを取
り付けたことを特徴とする。In order to solve the above-mentioned problems, the invention of a power module according to claim 1 is characterized in that a heat sink made of metal, an insulating substrate fixed on the heat sink, and the insulating substrate are provided. In a power module for a power electronics circuit including a fixed power element, a thermoelectric module in which insulating substrates are provided on both surfaces of a thermoelectric semiconductor element for thermoelectric conversion is placed at a position close to or close to the power element, The thermoelectric module is provided with an external terminal for connecting to a determination circuit for determining an output value of the module and a protection circuit for supplying electric power to the thermoelectric module. According to a second aspect of the present invention, in the power module according to the first aspect, a sealing material is provided on the outer periphery of the thermoelectric module. According to a third aspect of the present invention, in the power module according to the first aspect, the thermoelectric module is provided on an outer surface of the heat dissipation plate. According to a fourth aspect of the present invention, in the power module according to the third aspect, a recess is provided on the outer surface of the heat dissipation plate, and the thermoelectric module is attached to the recess.
【０００６】請求項５記載のパワーモジュールの発明
は、金属製の放熱板と、前記放熱板上に固着された絶縁
基板と、前記絶縁基板に固着されたパワー素子と、を備
えたパワーエレクトロニクス回路用パワーモジュールに
おいて、熱電変換する熱電半導体素子の両面に絶縁基板
を設けた熱電モジュールを、その熱電半導体素子の一部
を他の前記熱電半導体素子から電気的に切り離して２組
の熱電モジュール構成として、いずれも前記パワー素子
に密着若しくは近接した位置に配置し、前記熱電モジュ
ールの出力値を判定する判定回路に接続するための外部
端子を前記２組の熱電モジュールの一方に、および前記
熱電モジュールへ電力を供給する保護回路に接続するた
めの外部端子を前記２組の熱電モジュールの他方に、そ
れぞれ設けたことを特徴とする。請求項６記載の発明
は、請求項５記載のパワーモジュールにおいて、前記熱
電モジュールを前記放熱板の外側面に設けたことを特徴
とする。請求項７記載のパワーモジュールの発明は、金
属製の放熱板と、前記放熱板上に固着された絶縁基板
と、前記絶縁基板に固着されたパワー素子と、を備えた
パワーエレクトロニクス回路用パワーモジュールにおい
て、熱電変換する熱電半導体素子の両面に絶縁基板を設
けた熱電モジュールを、その熱電半導体素子の一部を他
の前記熱電半導体素子から電気的に切り離して２組の熱
電モジュール構成として、いずれも前記放熱板の外側面
に配置し、前記熱電モジュールの出力値を判定する判定
回路に接続するための外部端子を前記２組の熱電モジュ
ールの一方に、および前記熱電モジュールへ電力を供給
する保護回路に接続するための外部端子を前記２組の熱
電モジュールの他方に、それぞれ設けたことを特徴とす
る。請求項８記載の発明は、請求項６又は７記載のパワ
ーモジュールにおいて、前記放熱板の外側面に凹部を設
け、その凹部に前記熱電モジュールを取り付けたことを
特徴とする。請求項９記載のパワーモジュール用保護シ
ステムの発明は、請求項１〜８のいずれか1項記載のパ
ワーモジュールと、前記パワーモジュール内の前記熱電
モジュールの出力値を判定する判定回路および前記熱電
モジュールへ電力を供給する保護回路とからなる保護シ
ステム部と、を備え、前記熱電モジュールの前記外部端
子を前記判定回路および前記保護回路に接続して成るパ
ワーモジュール用保護システムにおいて、前記判定回路
で前記出力値の大小判定を行い、前記出力値があらかじ
め設定した判定基準値よりも大きい場合前記保護回路を
導通することを特徴とする。請求項１０記載の発明は、
請求項９記載のパワーモジュール用保護システムにおい
て、前記出力値があらかじめ設定した判定基準値よりも
大きい場合前記保護回路を導通し、導通開始後あらかじ
め設定した時間が経過すると前記保護回路を前記熱電モ
ジュールから切り離すことを特徴とする。According to a fifth aspect of the present invention, there is provided a power electronic circuit including a heat sink made of metal, an insulating substrate fixed to the heat sink, and a power element fixed to the insulating substrate. In a power module for use in a thermoelectric module, a thermoelectric module in which insulating substrates are provided on both surfaces of a thermoelectric semiconductor element for thermoelectric conversion is partially separated from the other thermoelectric semiconductor elements to form two sets of thermoelectric module configurations. , Both of which are arranged close to or close to the power element, and external terminals for connecting to a determination circuit for determining the output value of the thermoelectric module are provided on one of the two thermoelectric modules and to the thermoelectric module. External terminals for connecting to a protection circuit for supplying electric power are provided on the other side of the two sets of thermoelectric modules, respectively. And butterflies. According to a sixth aspect of the present invention, in the power module according to the fifth aspect, the thermoelectric module is provided on an outer surface of the heat dissipation plate. The invention of a power module according to claim 7 is a power module for a power electronics circuit, comprising: a metal heat sink, an insulating substrate fixed to the heat sink, and a power element fixed to the insulating substrate. In a thermoelectric module in which insulating substrates are provided on both surfaces of a thermoelectric semiconductor element for thermoelectric conversion, a part of the thermoelectric semiconductor element is electrically separated from the other thermoelectric semiconductor elements to form two sets of thermoelectric module configurations. An external terminal that is arranged on the outer surface of the heat dissipation plate and that is connected to a determination circuit that determines the output value of the thermoelectric module is connected to one of the two sets of thermoelectric modules, and a protection circuit that supplies power to the thermoelectric module. External terminals for connection to the other of the two sets of thermoelectric modules are respectively provided. The invention according to claim 8 is the power module according to claim 6 or 7, characterized in that a concave portion is provided on an outer surface of the heat dissipation plate, and the thermoelectric module is attached to the concave portion. The invention of a protection system for a power module according to claim 9 is the power module according to any one of claims 1 to 8, a determination circuit for determining an output value of the thermoelectric module in the power module, and the thermoelectric module. A protection system section comprising a protection circuit supplying power to the power module protection system, wherein the external terminal of the thermoelectric module is connected to the determination circuit and the protection circuit. It is characterized in that the magnitude of the output value is judged and the protection circuit is turned on when the output value is larger than a preset judgment reference value. The invention according to claim 10 is
The protection system for a power module according to claim 9, wherein when the output value is larger than a preset judgment reference value, the protection circuit is turned on, and when the preset time has elapsed after the start of conduction, the protection circuit is turned on. It is characterized by being separated from.
【０００７】以上のような構成によれば、パワー素子の
直下または放熱板にパワー素子の温度を検出する熱電モ
ジュールを設けたので、パワー素子の温度を即座に精度
よく検出できるとともに、パワー素子の過熱時には熱電
モジュールによりパワー素子を冷却することができる。
したがって、パワー素子を破壊させずに保護することが
できる。According to the above structure, since the thermoelectric module for detecting the temperature of the power element is provided directly below the power element or on the heat dissipation plate, the temperature of the power element can be detected immediately and accurately and at the same time When overheated, the power element can be cooled by the thermoelectric module.
Therefore, the power element can be protected without being destroyed.
【０００８】[0008]
【発明の実施の形態】以下、本発明の第１の実施の形態
を図１に基づいて説明する。図１は本発明の第１実施例
を示すパワーモジュールの側断面図である。同図におい
て、３は回路配線、４は半田で、５は半田４を介して回
路配線３上に固着された、スイッチングを行うＩＧＢＴ
等の半導体からなるパワー素子である。１はＣｕ等から
なる金属製の放熱板であり、下面にヒートシンクが固着
されて冷却される。８ａは図示しない外部電源の正極に
接続されるＰ側電極８ａである。９ｃは図示しない外部
の制御回路へ伝達するための温度検出電極である。１０
は配線用のワイヤであり、ボンディングによってその端
部をパワー素子５に固着されており、パワー素子５と電
極等を電気的に接続している。１１は樹脂からなるケー
スであり内面側と上面側に端部が突出するように電極８
ａと信号電極９ｃを内部に埋め込んであり、下面を放熱
板１に接着剤等で固着してある。１２はケース１１内部
に充填されるシリコーン等からなる絶縁性の充填材であ
り、ケース１１内部の絶縁性保持およびワイヤ１０の機
械的保持を行っている。１３は蓋であり、ケース１１に
接着剤等で固着されている。BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention. In the figure, 3 is a circuit wiring, 4 is a solder, and 5 is an IGBT that is fixed on the circuit wiring 3 via the solder 4 and performs switching.
Is a power device made of semiconductor such as. Reference numeral 1 denotes a metal heat radiating plate made of Cu or the like, and a heat sink is fixed to the lower surface of the heat radiating plate for cooling. Reference numeral 8a is a P-side electrode 8a connected to the positive electrode of an external power source (not shown). Reference numeral 9c is a temperature detection electrode for transmitting to an external control circuit (not shown). 10
Is a wire for wiring, the end portion of which is fixed to the power element 5 by bonding, and electrically connects the power element 5 to an electrode or the like. Reference numeral 11 is a case made of resin, and the electrode 8 is formed so that the end portions protrude toward the inner surface and the upper surface.
a and the signal electrode 9c are embedded inside, and the lower surface is fixed to the heat dissipation plate 1 with an adhesive or the like. An insulating filler 12 made of silicone or the like fills the inside of the case 11, and holds the inside of the case 11 as an insulating material and the wire 10 as a mechanical holding material. Reference numeral 13 denotes a lid, which is fixed to the case 11 with an adhesive or the like.
【０００９】１４は本発明で採用する熱電モジュールで
あり、熱電半導体素子１４ａ、絶縁基板１４ｂ、絶縁基
板１４ｃ、リード線１４ｄ、端子１４ｆからなる。この
熱電モジュール１４は、Ｎ型およびＰ型の熱電半導体素
子１４ａを順番に並べて絶縁基板１４ｂ、絶縁基板１４
ｃで挟み込んでいる。熱電半導体素子１４ａ側となる絶
縁基板１４ｂの下面、および絶縁基板１４ｃの上面には
熱電半導体素子１４ａが各々直列に接続されるように回
路配線が施してあり、熱電半導体素子１４ａと絶縁基板
１４ｂ、絶縁基板１４ｃは半田等によって固着されてい
る。リード線１４ｄは、一方の端部が絶縁基板１４ｃ上
の熱電半導体素子１４ａが接続された回路配線の始点と
終点に接続され、他端をケース１１に設けた端子１４ｆ
に接続されている。絶縁基板１４ｂの上面には、パワー
素子５を介して電源と負荷が接続されるように回路配線
３が施してあり、パワー素子５、およびワイヤ１０が固
着されている。絶縁基板１４ｃは、半田等によって放熱
板１に固着されている。また、１４ｋは絶縁性のリボン
または樹脂板等からなるシール材であり、熱電モジュー
ル１４の外周を覆って充填材１２の熱電モジュール１４
内部の隙間への浸入を防いでいる。１５は判定回路１６
と保護回路１７からなる保護システム部である。判定回
路１６は熱電モジュール１４の出力電圧をデジタル値へ
変換するＡＤコンバータ１６ａとデジタル値へ変換され
た出力電圧の大小を判定するＣＰＵ１６ｂからなる。保
護回路１７は熱電モジュール１４のパワー素子５側が低
温側で放熱板１側が高温側となるように電流を流す直流
電源１７ｃ、直流電源１７ｃと熱電モジュール１４を電
気的に接続／遮断する半導体スイッチ１７ｂ、ＣＰＵ１
６ｂの判定結果に応じてトランジスタ、またはＭＯＳＦ
ＥＴ、またはＩＧＢＴの半導体スイッチ１７ｂをＯＮ／
ＯＦＦするゲートドライブ回路１７ａからなる。Reference numeral 14 denotes a thermoelectric module used in the present invention, which comprises a thermoelectric semiconductor element 14a, an insulating substrate 14b, an insulating substrate 14c, a lead wire 14d, and a terminal 14f. In this thermoelectric module 14, N-type and P-type thermoelectric semiconductor elements 14a are arranged in order, and an insulating substrate 14b and an insulating substrate 14 are provided.
It is sandwiched by c. Circuit wiring is provided on the lower surface of the insulating substrate 14b on the thermoelectric semiconductor element 14a side and the upper surface of the insulating substrate 14c so that the thermoelectric semiconductor elements 14a are connected in series, and the thermoelectric semiconductor element 14a and the insulating substrate 14b are connected. The insulating substrate 14c is fixed by solder or the like. One end of the lead wire 14d is connected to the start point and the end point of the circuit wiring to which the thermoelectric semiconductor element 14a on the insulating substrate 14c is connected, and the other end is a terminal 14f provided on the case 11.
It is connected to the. The circuit wiring 3 is provided on the upper surface of the insulating substrate 14b so that the power source and the load are connected via the power element 5, and the power element 5 and the wire 10 are fixed. The insulating substrate 14c is fixed to the heat dissipation plate 1 by soldering or the like. Further, 14k is a sealing material made of an insulating ribbon or a resin plate, and covers the outer circumference of the thermoelectric module 14 and the thermoelectric module 14 of the filling material 12.
Prevents penetration into internal gaps. 15 is a determination circuit 16
And the protection circuit 17 is a protection system unit. The determination circuit 16 includes an AD converter 16a that converts the output voltage of the thermoelectric module 14 into a digital value and a CPU 16b that determines the magnitude of the output voltage converted into a digital value. The protection circuit 17 includes a DC power supply 17c for supplying a current so that the power element 5 side of the thermoelectric module 14 is on the low temperature side and the heat radiating plate 1 side is on the high temperature side, and a semiconductor switch 17b for electrically connecting / disconnecting the DC power supply 17c and the thermoelectric module 14 to each other. , CPU1
Depending on the judgment result of 6b, a transistor or a MOSF
Turn on / off the semiconductor switch 17b of ET or IGBT
The gate drive circuit 17a is turned off.
【００１０】次に、本発明の第１の実施の形態の電気的
動作を説明する。図示しない外部の制御回路から入力さ
れる制御信号によってパワー素子５がＯＮ／ＯＦＦのス
イッチ動作を行い、還流ダイオード６に電流が流れるこ
とで、パワー素子５および還流ダイオード６（図９参
考）が発熱する。その熱は、熱電モジュール１４を介し
て放熱板１へ伝わり外部へ放熱される。この時、熱電モ
ジュール１４には、熱源であるパワー素子５側と放熱板
１側とで温度勾配が生じ、熱電モジュール１４のゼーベ
ック効果によってパワー素子５側の発熱に応じた電圧を
端子１４ｅ間に生じる。端子１４ｅ間に生じた電圧は保
護システム部１５の判定回路１６へ入るようになってお
り、判定回路１６ではＡＤコンバータ１６ａで端子１４
ｆ間の電圧をデジタル値へ変換してＣＰＵ１６ｂに取り
込む。ここで、ＣＰＵ１６ｂには予め電圧値の大小を判
定するプログラムとパワー素子５が過熱により破壊する
温度よりも低い温度で生じる電圧値が判定の境界値とし
て入力されており、デジタル値へ変換された電圧値の大
小判定を行うようになっている。パワー素子５の発熱に
よって熱電モジュール１４の端子１４ｆに生じる電圧が
大きくなり予め設定しておいた境界値を越すと、ＣＰＵ
１６ｂはパワー素子５が過熱したと判断して保護回路１
７へ信号を出す。保護回路１７へ出された信号はゲート
ドライブ回路１７ａに入り、ゲート信号に変換されて通
常はＯＦＦしている半導体スイッチ１７ｂをＯＮする。
半導体スイッチ１７ｂがＯＮすると、直流電源１７ｃが
熱電モジュール１４の端子１４ｆに接続される。直流電
源１７ｃは、熱電モジュール１４のパワー素子５側が低
温側で放熱板１側が高温側とするように接続されている
ので、パワー素子５が熱電モジュール１４のペルチェ効
果によって冷却される。ここで、ＣＰＵ１６ｂから保護
回路１７への信号は予め一定時間持続するように設定し
てある。このため、半導体スイッチ１７ｂがＯＮして一
定時間経過すると、今度は半導体スイッチ１７ｂへＯＦ
Ｆ信号が送られて、直流電源１７ｃは端子１４ｆから遮
断される。この時パワー素子５がまだ過熱状態にあると
端子１４ｆ間の電圧が判定値よりも大きくなるため、Ｃ
ＰＵ１６ｂで再度過熱と判断されてパワー素子５は再び
冷却される。このように、熱電モジュール１４をパワー
素子５の直下に配置しているので、パワー素子５の過熱
をリアルタイムに精度よく検出することができるととも
に、パワー素子５を冷却して熱暴走による破壊から保護
することができる。Next, the electrical operation of the first embodiment of the present invention will be described. The power element 5 performs ON / OFF switching operation according to a control signal input from an external control circuit (not shown), and a current flows through the return diode 6, so that the power element 5 and the return diode 6 (see FIG. 9) generate heat. To do. The heat is transmitted to the radiator plate 1 via the thermoelectric module 14 and is radiated to the outside. At this time, in the thermoelectric module 14, a temperature gradient occurs between the power element 5 side which is a heat source and the heat radiating plate 1 side, and the Seebeck effect of the thermoelectric module 14 causes a voltage corresponding to heat generation on the power element 5 side between the terminals 14e. Occurs. The voltage generated between the terminals 14e is adapted to enter the determination circuit 16 of the protection system unit 15, and in the determination circuit 16, the AD converter 16a is used for the terminal 14e.
The voltage between f is converted into a digital value and taken into the CPU 16b. Here, a program for determining the magnitude of the voltage value and a voltage value generated at a temperature lower than the temperature at which the power element 5 is destroyed by overheating are input to the CPU 16b in advance as a determination boundary value and converted into a digital value. The magnitude of the voltage value is judged. When the voltage generated at the terminal 14f of the thermoelectric module 14 increases due to heat generation of the power element 5 and exceeds a preset boundary value, the CPU
16b judges that the power element 5 has overheated, and the protection circuit 1
Signal to 7. The signal output to the protection circuit 17 enters the gate drive circuit 17a, is converted into a gate signal, and turns on the semiconductor switch 17b which is normally off.
When the semiconductor switch 17b is turned on, the DC power supply 17c is connected to the terminal 14f of the thermoelectric module 14. The DC power supply 17c is connected such that the power element 5 side of the thermoelectric module 14 is the low temperature side and the heat sink 1 side is the high temperature side, so that the power element 5 is cooled by the Peltier effect of the thermoelectric module 14. Here, the signal from the CPU 16b to the protection circuit 17 is set in advance so as to last for a fixed time. Therefore, when the semiconductor switch 17b is turned on and a certain period of time elapses, the semiconductor switch 17b is turned off.
The F signal is sent and the DC power supply 17c is cut off from the terminal 14f. At this time, if the power element 5 is still in the overheated state, the voltage between the terminals 14f becomes larger than the judgment value, so that C
The PU 16b determines that the power element 5 is overheated again, and the power element 5 is cooled again. As described above, since the thermoelectric module 14 is arranged immediately below the power element 5, overheating of the power element 5 can be detected accurately in real time, and the power element 5 is cooled to protect it from damage due to thermal runaway. can do.
【００１１】図２は、本発明の第２の実施の形態を示す
パワーモジュールの側断面図である。 本実施の形態の
特徴は、放熱板の外側面に凹部１ａを設けた構造にあ
る。凹部１ａは、絶縁基板１４ｃの下面が放熱板１の下
面と同一となる深さになっており、凹部１ａの上面に絶
縁基板１４ｂが固着してある。通電によって生じたパワ
ー素子５と還流ダイオード６（図９参考）の熱は、絶縁
基板２、放熱板１を伝わって来るため熱電モジュール１
４の上面が高温側となり、放熱板１および絶縁基板１４
ｃの下面は図示しないヒートシンクに固着されて冷却さ
れるので熱電モジュールの下面が低温側となって温度勾
配が生じる。この結果、熱電モジュール１４のゼーベッ
ク効果によってパワー素子５側の発熱に応じた電圧を端
子１４ｆ間に生じ、パワー素子５の過熱検出および熱電
モジュール１４によるパワー素子５の冷却を行うことが
できる。ここで、放熱板１はＣｕ等の良伝熱体なので、
パワー素子５の過熱をリアルタイムに精度よく検出する
ことができるとともに、パワー素子５を冷却して熱暴走
による破壊から保護することができる。FIG. 2 is a side sectional view of a power module showing a second embodiment of the present invention. The feature of this embodiment is the structure in which the concave portion 1a is provided on the outer surface of the heat dissipation plate. The recess 1a has a depth such that the lower surface of the insulating substrate 14c is the same as the lower surface of the heat dissipation plate 1, and the insulating substrate 14b is fixed to the upper surface of the recess 1a. The heat of the power element 5 and the free wheeling diode 6 (see FIG. 9) generated by the energization is transmitted to the insulating substrate 2 and the heat dissipation plate 1, so that the thermoelectric module 1
The upper surface of 4 becomes the high temperature side, and the heat sink 1 and the insulating substrate 14
Since the lower surface of c is fixed to a heat sink (not shown) and cooled, the lower surface of the thermoelectric module becomes a low temperature side and a temperature gradient occurs. As a result, due to the Seebeck effect of the thermoelectric module 14, a voltage corresponding to the heat generated on the power element 5 side is generated between the terminals 14f, and it is possible to detect overheating of the power element 5 and cool the power element 5 by the thermoelectric module 14. Here, since the heat sink 1 is a good heat conductor such as Cu,
Overheating of the power element 5 can be detected in real time with high accuracy, and the power element 5 can be cooled to protect it from damage due to thermal runaway.
【００１２】図３は、本発明の第３の実施の形態を示す
パワーモジュールの側断面図であり、図４は本発明の熱
電モジュールの構成を示す断面図である。図３におい
て、１４は熱電モジュールであり、熱電半導体素子１４
ａ、絶縁基板１４ｂ、絶縁基板１４ｃ、リード線１４ｄ
１、１４ｄ２、配線１４ｅ、配線１４ｇ、端子１４ｆ、
端子１４ｈからなる。そして、図４から分かるように、
配線１４ｅ、配線１４ｇはそれぞれ熱電半導体素子１４
ａが直列に接続されるよう施してあり、配線１４ｅはエ
リアＡ１内に敷設され、配線１４ｇはエリアＡ２内に敷
設され、配線１４ｅと１４ｇはされぞれ電気的に分離さ
れている。熱電モジュール１４は、Ｎ型およびＰ型の熱
電半導体素子１４ａを順番に配線１４ｅと配線１４ｇ上
に並べて絶縁基板１４ｂ、絶縁基板１４ｃで挟み込み、
半田等によって固着されている。リード線１４ｄは、一
方の端部が絶縁基板１４ｃ上の熱電半導体素子１４ａが
接続された配線１４ｅ、配線１４ｇのそれぞれの始点と
終点に接続され、他端をケース１１に設けた端子１４ｆ
と端子１４ｈに接続されている。絶縁基板１４ｂの上面
には、パワー素子５を介して電源と負荷が接続されるよ
うに回路配線３が施してあり、パワー素子５、およびワ
イヤ１０が固着されている。絶縁基板１４ｃは、半田等
によって放熱板１に固着されている。１５は判定回路１
６と保護回路１７からなる保護システム部である。判定
回路１６は端子１４ｈの出力電圧をデジタル値へ変換す
るＡＤコンバータ１６ａとデジタル値へ変換された出力
電圧の大小を判定するＣＰＵ１６ｂからなる。保護回路
１７は端子１４ｆに接続された熱電半導体素子１４ａの
パワー素子５側が低温側で放熱板１側が高温側となるよ
うに電流を流す直流電源１７ｃ、直流電源１７ｃと熱電
モジュール１４を電気的に接続／遮断する半導体スイッ
チ１７ｂ、ＣＰＵ１６ｂの判定結果に応じてトランジス
タ、またはＭＯＳＦＥＴ、またはＩＧＢＴの半導体スイ
ッチ１７ｂをＯＮ／ＯＦＦするゲートドライブ回路１７
ａからなる。FIG. 3 is a side sectional view of a power module showing a third embodiment of the present invention, and FIG. 4 is a sectional view showing a constitution of a thermoelectric module of the present invention. In FIG. 3, reference numeral 14 denotes a thermoelectric module, which is a thermoelectric semiconductor element 14
a, insulating substrate 14b, insulating substrate 14c, lead wire 14d
1, 14d2, wiring 14e, wiring 14g, terminal 14f,
It consists of a terminal 14h. And, as can be seen from FIG.
The wiring 14e and the wiring 14g are the thermoelectric semiconductor element 14 respectively.
a is connected in series, the wiring 14e is laid in the area A1, the wiring 14g is laid in the area A2, and the wirings 14e and 14g are electrically separated from each other. In the thermoelectric module 14, N-type and P-type thermoelectric semiconductor elements 14a are sequentially arranged on the wiring 14e and the wiring 14g, and sandwiched between the insulating substrate 14b and the insulating substrate 14c.
It is fixed by solder or the like. One end of the lead wire 14d is connected to the start point and the end point of each of the wiring 14e and the wiring 14g to which the thermoelectric semiconductor element 14a on the insulating substrate 14c is connected, and the other end is a terminal 14f provided on the case 11.
And terminal 14h. Circuit wiring 3 is provided on the upper surface of the insulating substrate 14b so that a power source and a load are connected via the power element 5, and the power element 5 and the wire 10 are fixed. The insulating substrate 14c is fixed to the heat dissipation plate 1 by soldering or the like. 15 is a determination circuit 1
6 is a protection system unit including a protection circuit 17. The determination circuit 16 includes an AD converter 16a that converts the output voltage of the terminal 14h into a digital value and a CPU 16b that determines the magnitude of the output voltage converted into a digital value. The protection circuit 17 electrically connects the DC power supply 17c, the DC power supply 17c, and the thermoelectric module 14 so that a current flows so that the power element 5 side of the thermoelectric semiconductor element 14a connected to the terminal 14f is the low temperature side and the heat sink 1 side is the high temperature side. A gate drive circuit 17 for turning on / off the semiconductor switch 17b for connecting / disconnecting, and turning on / off the semiconductor switch 17b of a transistor, a MOSFET, or an IGBT according to the determination result of the CPU 16b.
It consists of a.
【００１３】次に、本発明の第３の実施の形態の電気的
動作について説明する。図示しない外部の制御回路から
入力される制御信号によってパワー素子５がＯＮ／ＯＦ
Ｆのスイッチ動作を行い、還流ダイオード６（図９参
考）に電流が流れることで、パワー素子５および還流ダ
イオード６が発熱する。その熱は、熱電モジュール１４
を介して放熱板１へ伝わり外部へ放熱される。この時熱
電モジュール１４には、熱源であるパワー素子５側と放
熱板１側とで温度勾配が生じ、配線１４ｇ部の熱電半導
体素子１４ａのゼーベック効果によってパワー素子５側
の発熱に応じた電圧を端子１４ｈ間に生じる。端子１４
ｈ間に生じた電圧は保護システム部１５の判定回路１６
へ入るようになっており、判定回路１６ではＡＤコンバ
ータ１６ａで端子１４ｈ間の電圧をデジタル値へ変換し
てＣＰＵ１６ｂに取り込む。ここで、ＣＰＵ１６ｂには
予め電圧値の大小を判定するプログラムと判定の境界値
が入力されており、デジタル値へ変換された電圧値の大
小判定を行うようになっている。パワー素子５の発熱に
よって熱電モジュール１４の端子１４ｈに生じる電圧が
大きくなり予め設定しておいた境界値を越すと、ＣＰＵ
１６ｂはパワー素子５の温度が上昇したと判断して保護
回路１７へＯＮ信号を出す。保護回路１７へ出されたＯ
Ｎ信号はゲートドライブ回路１７ａに入り、ゲート信号
に変換されて通常はＯＦＦしている半導体スイッチ１７
ｂをＯＮする。半導体スイッチ１７ｂがＯＮすると、直
流電源１７ｃが熱電モジュール１４の端子１４ｆに接続
される。直流電源１７ｃは、配線１４ｅ部の熱電半導体
素子１４ａのパワー素子５側が低温側で放熱板１側が高
温側とするように接続されているので、パワー素子５が
熱電モジュール１４のペルチェ効果によって冷却され
る。次に、パワー素子５が冷却されて温度が下がると端
子１４ｈの電圧が低下して境界値より小さくなり、ＣＰ
Ｕ１６ｂはパワー素子５の温度が低下したと判断して保
護回路１７へＯＦＦ信号を出す。保護回路１７へ出され
たＯＦＦ信号はゲートドライブ回路１７ａに入り、ゲー
ト信号に変換されてＯＮしている半導体スイッチ１７ｂ
をＯＦＦして直流電源１７ｃを端子１４ｆから切り離
す。ここで、配線１４ｇは熱電モジュール１４の中央部
に図示したが、熱電モジュール１４の端部でもよく、同
様の効果がある。このように、熱電モジュール１４の配
線をエリアＡ１とエリアＡ２とに分割して温度検出部と
冷却部とに構成しパワー素子５の直下に配置しているの
で、パワー素子５の過熱をリアルタイムに精度よく検出
することができるとともに、パワー素子５を冷却して熱
暴走による破壊から保護することができる。また、精度
よく温度上昇を検出して冷却を繰り返すことでパワー素
子５、半田４、絶縁基板３を一定の温度範囲に保つこと
できるので、半田４に加わる繰返し応力をなくして亀裂
や剥離の発生を防止することができる。Next, the electrical operation of the third embodiment of the present invention will be described. The power element 5 is turned on / off by a control signal input from an external control circuit (not shown).
The power element 5 and the free wheeling diode 6 generate heat by performing the switching operation of F and flowing the current through the free wheeling diode 6 (see FIG. 9). The heat is generated by the thermoelectric module 14
The heat is dissipated to the outside through the heat dissipation plate 1. At this time, in the thermoelectric module 14, a temperature gradient occurs between the power element 5 side which is a heat source and the heat radiating plate 1 side, and a voltage corresponding to heat generation on the power element 5 side is generated by the Seebeck effect of the thermoelectric semiconductor element 14a in the wiring 14g. It occurs between terminals 14h. Terminal 14
The voltage generated during h is determined by the determination circuit 16 of the protection system unit 15.
In the determination circuit 16, the AD converter 16a converts the voltage between the terminals 14h into a digital value and takes it into the CPU 16b. Here, a program for determining the magnitude of the voltage value and a boundary value for the determination are input to the CPU 16b in advance, and the magnitude of the voltage value converted into the digital value is determined. When the voltage generated at the terminal 14h of the thermoelectric module 14 increases due to heat generation of the power element 5 and exceeds a preset boundary value, the CPU
16b determines that the temperature of the power element 5 has risen and outputs an ON signal to the protection circuit 17. O issued to the protection circuit 17
The N signal enters the gate drive circuit 17a, is converted into a gate signal, and is normally turned off.
Turn on b. When the semiconductor switch 17b is turned on, the DC power supply 17c is connected to the terminal 14f of the thermoelectric module 14. Since the DC power supply 17c is connected so that the power element 5 side of the thermoelectric semiconductor element 14a in the wiring 14e part is the low temperature side and the heat sink 1 side is the high temperature side, the power element 5 is cooled by the Peltier effect of the thermoelectric module 14. It Next, when the power element 5 is cooled and the temperature thereof is lowered, the voltage of the terminal 14h is lowered and becomes smaller than the boundary value.
U16b determines that the temperature of the power element 5 has dropped, and outputs an OFF signal to the protection circuit 17. The OFF signal output to the protection circuit 17 enters the gate drive circuit 17a, is converted into a gate signal, and is turned on to the semiconductor switch 17b.
Is turned off to disconnect the DC power supply 17c from the terminal 14f. Here, although the wiring 14g is illustrated in the central portion of the thermoelectric module 14, it may be provided at the end portion of the thermoelectric module 14 and has the same effect. As described above, the wiring of the thermoelectric module 14 is divided into the area A1 and the area A2, and the wiring is configured as the temperature detecting portion and the cooling portion and is arranged immediately below the power element 5, so that the overheating of the power element 5 is performed in real time. It is possible to detect with high accuracy and to cool the power element 5 to protect it from damage due to thermal runaway. Further, since the power element 5, the solder 4, and the insulating substrate 3 can be kept in a constant temperature range by accurately detecting the temperature rise and repeating the cooling, the repeated stress applied to the solder 4 is eliminated and cracks or peeling occur. Can be prevented.
【００１４】図５は、本発明の第４実施の形態を示すパ
ワーモジュールの側断面図である。本実施の形態の特徴
は、放熱板の外側面に凹部１ａを設けた構造にある。凹
部１ａは、絶縁基板１４ｃの下面が放熱板１の下面と同
一となる深さになっており、凹部１ａの上面に絶縁基板
１４ｂが固着してある。通電によって生じたパワー素子
５と還流ダイオード６の熱は、絶縁基板２、放熱板１を
伝わって来るため熱電モジュール１４の上面が高温側と
なり、放熱板１および絶縁基板１４ｃの下面は図示しな
いヒートシンクに固着されて冷却されるので熱電モジュ
ールの下面が低温側となって温度勾配が生じる。この結
果、配線１４ｇ部の熱電半導体素子１４ａのゼーベック
効果によってパワー素子５側の発熱に応じた電圧を配線
１４ｄ２間に生じ、パワー素子５の過熱検出および配線
１４ｅ部の熱電半導体素子１４ａによるパワー素子５の
冷却を行うことができる。ここで、放熱板１はＣｕ等の
良伝熱体なので、パワー素子５の過熱をリアルタイムに
精度よく検出することができるとともに、パワー素子５
を冷却して熱暴走による破壊から保護することができ
る。ここで、熱電モジュール１４は温度検出用と冷却用
の２組の熱電モジュールで構成してもよく、同様の効果
を得ることができる。FIG. 5 is a side sectional view of a power module showing a fourth embodiment of the present invention. The feature of this embodiment is the structure in which the concave portion 1a is provided on the outer surface of the heat dissipation plate. The recess 1a has a depth such that the lower surface of the insulating substrate 14c is the same as the lower surface of the heat dissipation plate 1, and the insulating substrate 14b is fixed to the upper surface of the recess 1a. The heat of the power element 5 and the free wheeling diode 6 generated by energization is transmitted to the insulating substrate 2 and the heat radiating plate 1, so that the upper surface of the thermoelectric module 14 becomes the high temperature side, and the heat radiating plate 1 and the lower surface of the insulating substrate 14c are not shown in the heat sink. Since the lower surface of the thermoelectric module becomes a low temperature side because of being fixed to and cooled by the temperature gradient, a temperature gradient occurs. As a result, the Seebeck effect of the thermoelectric semiconductor element 14a in the wiring 14g causes a voltage corresponding to the heat generated on the power element 5 side between the wirings 14d2 to detect overheating of the power element 5 and the thermoelectric semiconductor element 14a in the wiring 14e. Cooling of 5 can be performed. Here, since the heat dissipation plate 1 is a good heat conductor such as Cu, overheating of the power element 5 can be accurately detected in real time, and at the same time, the power element 5 can be detected.
Can be cooled and protected from damage due to thermal runaway. Here, the thermoelectric module 14 may be composed of two sets of thermoelectric modules for temperature detection and cooling, and similar effects can be obtained.
【００１５】[0015]
【発明の効果】以上述べたように、本発明によればパワ
ー素子の直下または放熱板に熱電モジュールを設け、保
護システム部によってパワー素子の過熱検出および冷却
を行うようにしたので、パワー素子の過熱をリアルタイ
ムに精度よく検出するとともに冷却することができる。
この結果、パワー素子の過熱による破壊を防止して信頼
性の高いパワーモジュールとすることができる。また、
熱電モジュールの配線を分割して温度検出部と冷却部と
に構成しパワー素子５の直下または放熱板に熱電モジュ
ールを設け、保護システム部によってパワー素子の温度
検出および冷却を行うようにしたので、パワー素子の温
度上昇をリアルタイムに精度よく検出するとともに冷却
することができる。この結果、パワー素子の過熱による
破壊を防止するとともに、パワー素子、半田、絶縁基板
を一定の温度範囲に保ち半田に加わる繰返し応力をなく
して亀裂や剥離の発生を防止することができ、パワー素
子の破壊することの無い信頼性の高いパワーモジュール
とすることができる。As described above, according to the present invention, the thermoelectric module is provided directly below the power element or on the heat dissipation plate, and the protection system section is used to detect and cool the power element. It is possible to accurately detect overheat in real time and to cool.
As a result, it is possible to prevent the power element from being destroyed by overheating and to obtain a highly reliable power module. Also,
Since the wiring of the thermoelectric module is divided into a temperature detecting section and a cooling section and the thermoelectric module is provided directly below the power element 5 or on the heat dissipation plate, the protection system section detects the temperature and cools the power element. The temperature rise of the power element can be accurately detected in real time and the power element can be cooled. As a result, it is possible to prevent damage to the power element due to overheating, and to prevent the occurrence of cracks or peeling by keeping the power element, the solder, and the insulating substrate within a certain temperature range, eliminating the repeated stress applied to the solder, It is possible to obtain a highly reliable power module that is not destroyed.
【図１】本発明の第１の実施の形態を示すパワーモジュ
ールの側断面図である。FIG. 1 is a side sectional view of a power module showing a first embodiment of the present invention.
【図２】本発明の第２の実施の形態を示すパワーモジュ
ールの側断面図である。FIG. 2 is a side sectional view of a power module showing a second embodiment of the present invention.
【図３】本発明の第３の実施の形態を示すパワーモジュ
ールの側断面図である。FIG. 3 is a side sectional view of a power module showing a third embodiment of the present invention.
【図４】第３の実施の形態に係る２分割熱電モジュール
の構成を示す平面断面図である。FIG. 4 is a plan sectional view showing a configuration of a two-divided thermoelectric module according to a third embodiment.
【図５】本発明の第４の実施の形態を示すパワーモジュ
ールの側断面図である。FIG. 5 is a side sectional view of a power module showing a fourth embodiment of the present invention.
【図６】従来のパワーモジュールを示す斜視図である。FIG. 6 is a perspective view showing a conventional power module.
【図７】従来のパワーモジュールを示す内部構成図であ
る。FIG. 7 is an internal configuration diagram showing a conventional power module.
【図８】従来のパワーモジュールを示す側断面図であ
る。FIG. 8 is a side sectional view showing a conventional power module.
【図９】従来のパワーモジュールを示す回路図である。FIG. 9 is a circuit diagram showing a conventional power module.
１ 放熱板 １ａ 凹部 ２ 絶縁基板 ３ 回路配線 ４ 半田 ５ パワー素子 ５ａ Ｐ側パワー素子 ５ｂ Ｎ側パワー素子 ６ 還流ダイオード ６ａ Ｐ側還流ダイオード ６ｂ Ｎ側還流ダイオード ７ サーミスタ ８ 電極 ８ａ Ｐ側電極 ８ｂ Ｎ側電極 ８ｃ 負荷側電極 ９ 信号電極 ９ａ ゲート電極 ９ｂ エミッタ電極 ９ｃ 温度検出電極 １０ ワイヤ １１ ケース １２ 充填材 １３ 蓋 １４ 熱電モジュール １４ａ 熱電半導体素子 １４ｂ 絶縁基板 １４ｃ 絶縁基板 １４ｄ、１４ｄ１、１４ｄ２ リード線 １４ｅ 配線 １４ｆ 端子 １４ｇ 配線 １４ｈ 端子 １４ｋ シール材 １５ 保護システム部 １６ 判定回路 １６ａ ＡＤコンバータ １６ｂ ＣＰＵ １７ 保護回路 １７ａ ゲートドライブ回路 １７ｂ 半導体スイッチ １７ｃ 直流電源 1 heat sink 1a recess 2 insulating substrate 3 circuit wiring 4 solder 5 power elements 5a P side power element 5b N side power element 6 Free wheeling diode 6a P side free wheeling diode 6b N side free wheeling diode 7 Thermistor 8 electrodes 8a P side electrode 8b N side electrode 8c Load side electrode 9 signal electrodes 9a Gate electrode 9b Emitter electrode 9c Temperature detection electrode 10 wires 11 cases 12 Filling material 13 lid 14 thermoelectric module 14a Thermoelectric semiconductor element 14b insulating substrate 14c insulating substrate 14d, 14d1, 14d2 lead wire 14e wiring 14f terminal 14g wiring 14h terminal 14k sealing material 15 Protection system department 16 Judgment circuit 16a AD converter 16b CPU 17 Protection circuit 17a Gate drive circuit 17b Semiconductor switch 17c DC power supply
フロントページの続き (72)発明者 石田 雄二 福岡県北九州市八幡西区黒崎城石２番１号 株式会社安川電機内Continued front page (72) Inventor Yuji Ishida 2-1, Kurosaki Shiroishi, Hachiman Nishi-ku, Kitakyushu City, Fukuoka Prefecture Yasukawa Electric Co., Ltd.
Claims (10)
された絶縁基板と、前記絶縁基板に固着されたパワー素
子と、を備えたパワーエレクトロニクス回路用パワーモ
ジュールにおいて、 熱電変換する熱電半導体素子の両面に絶縁基板を設けた
熱電モジュールを前記パワー素子に密着若しくは近接し
た位置に配置し、前記熱電モジュールの出力値を判定す
る判定回路および前記熱電モジュールへ電力を供給する
保護回路に接続するための外部端子を前記熱電モジュー
ルに設けたことを特徴とするパワーモジュール。1. A power module for a power electronic circuit, comprising a metal heat sink, an insulating substrate fixed to the heat sink, and a power element fixed to the insulating substrate, wherein thermoelectric conversion is performed. A thermoelectric module provided with insulating substrates on both sides of a semiconductor element is arranged at a position in close contact with or close to the power element, and connected to a determination circuit for determining an output value of the thermoelectric module and a protection circuit for supplying power to the thermoelectric module. A power module, wherein the thermoelectric module is provided with an external terminal for performing the operation.
設けたことを特徴とする請求項１記載のパワーモジュー
ル。2. The power module according to claim 1, wherein a sealing material is provided on the outer periphery of the thermoelectric module.
面に設けたことを特徴とする請求項１記載のパワーモジ
ュール。3. The power module according to claim 1, wherein the thermoelectric module is provided on an outer surface of the heat dissipation plate.
凹部に前記熱電モジュールを取り付けたことを特徴とす
る請求項３記載のパワーモジュール。4. The power module according to claim 3, wherein a concave portion is provided on an outer surface of the heat dissipation plate, and the thermoelectric module is attached to the concave portion.
された絶縁基板と、前記絶縁基板に固着されたパワー素
子と、を備えたパワーエレクトロニクス回路用パワーモ
ジュールにおいて、 熱電変換する熱電半導体素子の両面に絶縁基板を設けた
熱電モジュールを、その熱電半導体素子の一部を他の前
記熱電半導体素子から電気的に切り離して２組の熱電モ
ジュール構成として、いずれも前記パワー素子に密着若
しくは近接した位置に配置し、 前記熱電モジュールの出力値を判定する判定回路に接続
するための外部端子を前記２組の熱電モジュールの一方
に、および前記熱電モジュールへ電力を供給する保護回
路に接続するための外部端子を前記２組の熱電モジュー
ルの他方に、それぞれ設けたことを特徴とするパワーモ
ジュール。5. A power module for a power electronics circuit, comprising a metal heat dissipation plate, an insulating substrate fixed to the heat dissipation plate, and a power element fixed to the insulating substrate. A thermoelectric module in which insulating substrates are provided on both sides of a semiconductor element is electrically separated from other thermoelectric semiconductor elements in a part of the thermoelectric semiconductor element to form two sets of thermoelectric module configurations, both of which are in close contact with the power element or External terminals for connecting to a determination circuit that determines the output value of the thermoelectric module are arranged in close proximity, and are connected to one of the two sets of thermoelectric modules and to a protection circuit that supplies power to the thermoelectric module. A power module, characterized in that external terminals are provided on the other side of the two sets of thermoelectric modules.
面に設けたことを特徴とする請求項５記載のパワーモジ
ュール。6. The power module according to claim 5, wherein the thermoelectric module is provided on an outer surface of the heat dissipation plate.
された絶縁基板と、前記絶縁基板に固着されたパワー素
子と、を備えたパワーエレクトロニクス回路用パワーモ
ジュールにおいて、 熱電変換する熱電半導体素子の両面に絶縁基板を設けた
熱電モジュールを、その熱電半導体素子の一部を他の前
記熱電半導体素子から電気的に切り離して２組の熱電モ
ジュール構成として、いずれも前記放熱板の外側面に配
置し、 前記熱電モジュールの出力値を判定する判定回路に接続
するための外部端子を前記２組の熱電モジュールの一方
に、および前記熱電モジュールへ電力を供給する保護回
路に接続するための外部端子を前記２組の熱電モジュー
ルの他方に、それぞれ設けたことを特徴とするパワーモ
ジュール。7. A power module for a power electronic circuit, comprising a metal heat dissipation plate, an insulating substrate fixed to the heat dissipation plate, and a power element fixed to the insulating substrate. A thermoelectric module in which insulating substrates are provided on both sides of a semiconductor element is electrically separated from other thermoelectric semiconductor elements in a part of the thermoelectric semiconductor element to form two sets of thermoelectric module configurations. And an external terminal for connecting to a determination circuit for determining an output value of the thermoelectric module to one of the two sets of thermoelectric modules, and an external terminal for connecting to a protection circuit that supplies power to the thermoelectric module. A power module, wherein terminals are provided on the other side of the two sets of thermoelectric modules, respectively.
凹部に前記熱電モジュールを取り付けたことを特徴とす
る請求項６又は７記載のパワーモジュール。8. The power module according to claim 6, wherein a concave portion is provided on an outer surface of the heat dissipation plate, and the thermoelectric module is attached to the concave portion.
ーモジュールと、 前記パワーモジュール内の前記熱電モジュールの出力値
を判定する判定回路および前記熱電モジュールへ電力を
供給する保護回路とからなる保護システム部と、を備
え、前記熱電モジュールの前記外部端子を前記判定回路
および前記保護回路に接続して成るパワーモジュール用
保護システムにおいて、 前記判定回路で前記出力値の大小判定を行い、前記出力
値があらかじめ設定した判定基準値よりも大きい場合前
記保護回路を導通することを特徴とする保護システム。9. A power module according to claim 1, a determination circuit for determining an output value of the thermoelectric module in the power module, and a protection circuit for supplying power to the thermoelectric module. In the protection system for a power module, which comprises a protection system unit comprising: a thermoelectric module, the external terminal of the thermoelectric module being connected to the determination circuit and the protection circuit, wherein the determination circuit determines the magnitude of the output value. A protection system which conducts the protection circuit when an output value is larger than a preset judgment reference value.
護システムにおいて、 前記出力値があらかじめ設定した判定基準値よりも大き
い場合前記保護回路を導通し、導通開始後あらかじめ設
定した時間が経過すると前記保護回路を前記熱電モジュ
ールから切り離すことを特徴とする保護システム。10. The power module protection system according to claim 9, wherein the protection circuit is turned on when the output value is larger than a preset judgment reference value, and the protection is performed when a preset time has elapsed after the start of conduction. A protection system, characterized in that the circuit is separated from the thermoelectric module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379232A JP4045404B2 (en) | 2001-12-12 | 2001-12-12 | Power module and its protection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379232A JP4045404B2 (en) | 2001-12-12 | 2001-12-12 | Power module and its protection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003179196A true JP2003179196A (en) | 2003-06-27 |
| JP4045404B2 JP4045404B2 (en) | 2008-02-13 |
Family
ID=19186688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001379232A Expired - Fee Related JP4045404B2 (en) | 2001-12-12 | 2001-12-12 | Power module and its protection system |
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| Country | Link |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261581A (en) * | 2005-03-18 | 2006-09-28 | Sony Corp | Multi-chip module device and multi-chip shutdown control method |
| JP2008010439A (en) * | 2006-06-27 | 2008-01-17 | Meidensha Corp | Cooling method of substrate and cooling structure thereof |
| JP2008061375A (en) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | Power converter |
| JP2010056333A (en) * | 2008-08-28 | 2010-03-11 | Toyota Motor Corp | Semiconductor device |
| JP2014064378A (en) * | 2012-09-20 | 2014-04-10 | Fuji Electric Co Ltd | Adapter power supply device |
| JP2024133724A (en) * | 2020-08-12 | 2024-10-02 | 富士電機株式会社 | Semiconductor Module |
-
2001
- 2001-12-12 JP JP2001379232A patent/JP4045404B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261581A (en) * | 2005-03-18 | 2006-09-28 | Sony Corp | Multi-chip module device and multi-chip shutdown control method |
| JP2008010439A (en) * | 2006-06-27 | 2008-01-17 | Meidensha Corp | Cooling method of substrate and cooling structure thereof |
| JP2008061375A (en) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | Power converter |
| JP2010056333A (en) * | 2008-08-28 | 2010-03-11 | Toyota Motor Corp | Semiconductor device |
| JP2014064378A (en) * | 2012-09-20 | 2014-04-10 | Fuji Electric Co Ltd | Adapter power supply device |
| JP2024133724A (en) * | 2020-08-12 | 2024-10-02 | 富士電機株式会社 | Semiconductor Module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4045404B2 (en) | 2008-02-13 |
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