JP2003160859A - Silver alloy sputtering target for forming reflection coat on optical recording medium - Google Patents
Silver alloy sputtering target for forming reflection coat on optical recording mediumInfo
- Publication number
- JP2003160859A JP2003160859A JP2001358852A JP2001358852A JP2003160859A JP 2003160859 A JP2003160859 A JP 2003160859A JP 2001358852 A JP2001358852 A JP 2001358852A JP 2001358852 A JP2001358852 A JP 2001358852A JP 2003160859 A JP2003160859 A JP 2003160859A
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- recording medium
- alloy
- silver alloy
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Physical Vapour Deposition (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、光記録ディスク
(CD−RW,DVD−RAM)などの光記録媒体の反
射膜を形成するための銀合金スパッタリングターゲット
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silver alloy sputtering target for forming a reflective film of an optical recording medium such as an optical recording disk (CD-RW, DVD-RAM).
【0002】[0002]
【従来の技術】従来、光記録ディスク(CD−RW,D
VD−RAM)などの光記録媒体の反射膜としてAg反
射膜が使用されており、このAg反射膜は400〜83
0nmの幅広い波長域での反射率が高く、特に他の金属
の反射膜にくらべて、青色レーザー光などの短波長のレ
ーザー光に対する反射率が優れているところから広く使
用されている。しかし、記録媒体が書き換え可能な相変
化形タイプの場合は、反射膜は記録媒体の線速に応じて
熱伝導率を容易に制御できることが必要であるが、Ag
反射膜は熱伝導率が良すぎるという欠点がある。したが
って反射率が高くかつ熱伝導率の低い反射膜が求められ
ており、その反射率が高くかつ熱伝導率の低い反射膜の
例としてAgにCu,Mg,Zn,Sn,Bi,In、
Ti、Zr、Au、Pd、Ptのうちの1種以上を含む
Ag合金からなる反射膜が知られており(特開2001
−35014号公報参照)、さらにAg−In,Ag−
V,Ag−Nbなどの合金からなる反射膜が知られてい
る(特開平6−243509号公報参照)。2. Description of the Related Art Conventionally, optical recording disks (CD-RW, D
An Ag reflection film is used as a reflection film of an optical recording medium such as a VD-RAM), and the Ag reflection film is 400 to 83.
It is widely used because it has a high reflectance in a wide wavelength range of 0 nm and is particularly excellent in reflectance for short-wavelength laser light such as blue laser light as compared with other metal reflection films. However, when the recording medium is a rewritable phase change type, it is necessary that the reflective film can easily control the thermal conductivity according to the linear velocity of the recording medium.
The reflective film has a drawback that the thermal conductivity is too good. Therefore, a reflective film having a high reflectance and a low thermal conductivity is required, and as an example of the reflective film having a high reflectance and a low thermal conductivity, Ag, Cu, Mg, Zn, Sn, Bi, In,
A reflective film made of an Ag alloy containing at least one of Ti, Zr, Au, Pd and Pt is known (Japanese Patent Laid-Open No. 2001-2001).
-35014), and Ag-In, Ag-.
A reflective film made of an alloy such as V or Ag-Nb is known (see Japanese Patent Laid-Open No. 6-243509).
【0003】[0003]
【発明が解決しようとする課題】しかし、これら従来の
Ag合金反射膜は、いずれも表面の耐候性が不十分であ
るところから、時間が経つにつれて反射率が低下し、特
に波長の短い青色レーザー光に対する反射率の低下が著
しく、短期間に光記録媒体の反射膜としての性能が低下
するという問題点があった。However, all of these conventional Ag alloy reflective films have insufficient surface weather resistance, so that the reflectance decreases with the passage of time, and a blue laser having a particularly short wavelength is used. There has been a problem that the reflectance for light is remarkably lowered and the performance as a reflection film of an optical recording medium is lowered in a short period of time.
【0004】[0004]
【課題を解決するための手段】そこで本発明者らは、経
時変化の少ないAg合金反射膜を得るべく研究を行なっ
ていたところ、(イ)In:0.5〜15質量%を含
み、さらにCr,Co,Niの内の1種または2種以上
を合計で0.01〜5質量%を含み、残部がAgである
組成の銀合金からなるターゲットを用いてスパッタリン
グすることにより得られた銀合金反射膜は、経時変化に
よる反射率の低下が極めて少なくなる、(ロ)Agに含
まれるSnはInと同じ作用を有するので、(イ)にお
ける銀合金に含まれるInの一部または全部をSnで置
換することもできる、という研究結果が得られたのであ
る。The inventors of the present invention have conducted research to obtain an Ag alloy reflective film that is less likely to change over time. As a result, (a) In: 0.5 to 15% by mass, and Silver obtained by sputtering using a target made of a silver alloy having a composition of 0.01 to 5 mass% in total of one or more of Cr, Co and Ni, and the balance being Ag. In the alloy reflection film, the decrease in reflectance due to aging is extremely small. (B) Since Sn contained in Ag has the same action as In, a part or all of In contained in the silver alloy in (a) is removed. The result of the study was that it could be replaced by Sn.
【0005】この発明は、かかる研究結果に基づいて成
されたものであって、(1)InおよびSnの内の1種
または2種を合計で0.5〜15質量%を含み、さらに
Cr,Co,Niの内の1種または2種以上を合計で
0.01〜5質量%を含み、残部がAgである組成の銀
合金からなる光記録媒体の反射膜形成用銀合金スパッタ
リングターゲット、(2)前記(1)記載のターゲット
をスパッタリングすることにより形成された経時変化の
少ない光記録媒体の反射膜、に特徴を有するものであ
る。The present invention was made on the basis of the results of such research. (1) One or two of In and Sn are contained in a total amount of 0.5 to 15% by mass, and Cr is further added. , Co, Ni, one or more of which are contained in a total amount of 0.01 to 5% by mass, and the balance being Ag alloy having a composition of Ag alloy, and a silver alloy sputtering target for forming a reflective film of an optical recording medium, (2) A reflective film of an optical recording medium which is formed by sputtering the target according to the above (1) and has little change over time.
【0006】この発明の銀合金反射膜を形成するための
スパッタリングターゲットは、高純度Agを真空または
不活性ガス雰囲気中で溶解し、得られた溶湯にInおよ
び/またはSnを添加してAg合金溶湯を作製し、この
Ag合金溶湯に、予め作製しておいたCr−Ag母合
金、Co−Ag母合金、Ni−Ag母合金を添加して所
定の成分組成のAg合金となるように真空または不活性
ガス雰囲気中で溶解し、このようにして得られた溶湯を
真空または不活性ガス雰囲気中で鋳造してインゴットを
作製し、得られたインゴットを熱間加工したのち機械加
工することにより製造することができる。The sputtering target for forming the silver alloy reflective film of the present invention is a Ag alloy prepared by melting high-purity Ag in a vacuum or an inert gas atmosphere and adding In and / or Sn to the obtained molten metal. A molten metal is prepared, and a Cr-Ag mother alloy, a Co-Ag mother alloy, and a Ni-Ag mother alloy, which have been prepared in advance, are added to this molten Ag alloy, and a vacuum is applied so as to form an Ag alloy having a predetermined composition. Alternatively, by melting in an inert gas atmosphere, casting the molten metal thus obtained in a vacuum or in an inert gas atmosphere to prepare an ingot, and hot-working the obtained ingot and then machining it. It can be manufactured.
【0007】次に、この発明のAg合金からなるスパッ
タリングターゲットおよびこのターゲットを用いて形成
したAg合金反射膜の成分組成を前記の如く限定した理
由を説明する。Next, the reason why the component composition of the sputtering target made of the Ag alloy of the present invention and the Ag alloy reflective film formed by using the target is limited as described above will be explained.
【0008】In,Sn:これら成分は、Ag合金反射
膜の反射率が経時変化するのを防止する効果があるが、
これら成分が0.5質量%未満含んでも十分な耐候性が
得られず、一方、15質量%を越えて含有すると、Ag合
金反射膜の初期反射率が低下するようになるので好まし
くない。したがって、Ag合金反射膜およびこのAg合
金反射膜を形成するためのスパッタリングターゲットに
含まれるこれら成分の含有量は0.5〜15質量%(一層
好ましくは5〜10質量%)に定めた。In, Sn: These components have the effect of preventing the reflectance of the Ag alloy reflective film from changing with time.
If these components are contained in an amount of less than 0.5% by mass, sufficient weather resistance cannot be obtained. On the other hand, if they are contained in an amount of more than 15% by mass, the initial reflectance of the Ag alloy reflective film will decrease, which is not preferable. Therefore, the content of these components contained in the Ag alloy reflective film and the sputtering target for forming this Ag alloy reflective film is set to 0.5 to 15% by mass (more preferably 5 to 10% by mass).
【0009】Cr、Co、Ni:これら成分は、Inお
よびSnの内の1種または2種を合計で0.5〜15質
量%を含むAg合金反射膜の耐候性を一層強化して反射
率が経時変化するのを防止する成分であるが、これら成
分の1種または2種以上を合計で0.01質量%未満含
んでも一層の耐候性が得られず、一方、これら成分の1種
または2種以上を合計で5質量%を越えて含有すると、
耐候性は一層優れたものとなるものの、Ag合金反射膜
の初期反射率が低下するようになるので好ましくない。
したがって、Ag合金反射膜およびこのAg合金反射膜
を形成するためのスパッタリングターゲットに含まれる
これら成分の含有量は0.01〜5質量%(一層好ましく
は0.5〜3質量%)に定めた。Cr, Co, Ni: These components further enhance the weather resistance of the Ag alloy reflective film containing one or two of In and Sn in a total amount of 0.5 to 15 mass%, and reflectivity. Is a component that prevents the change over time, but further weather resistance cannot be obtained even if the total amount of one or more of these components is less than 0.01% by mass. When two or more kinds are contained in a total amount of more than 5% by mass,
Although the weather resistance is further improved, the initial reflectance of the Ag alloy reflective film is lowered, which is not preferable.
Therefore, the content of these components contained in the Ag alloy reflective film and the sputtering target for forming the Ag alloy reflective film is set to 0.01 to 5 mass% (more preferably 0.5 to 3 mass%). .
【0010】[0010]
【発明の実施の形態】原料として、Ag、In、Snを
Ar雰囲気にて高周波誘導加熱炉により溶解し、得られ
た溶湯に予めプラズマアーク溶解炉を使用して作製して
おいたCr−Ag母合金、Co−Ag母合金、Ni−A
g母合金を添加してAg合金溶湯を作製し、これらAg
合金溶湯をAr雰囲気中で鋳造することにより直径:1
00mm、長さ:90mmの寸法を有するインゴットを
作製した。このインゴットを輪切り状に切断して直径:
100mm、厚さ:30mmの寸法を有する円板を作製
し、さらにこの円板を600℃にて熱間圧延することに
より厚さ:6mmの寸法を有する圧延板を作製し、これ
を機械加工することにより直径:200mm、厚さ:5
mmの寸法を有し表1〜2に示される成分組成を有する
本発明銀合金スパッタリングターゲット(以下、本発明
ターゲットという)1〜23、比較銀合金スパッタリン
グターゲット(以下、比較ターゲットという)1〜6お
よび従来銀合金スパッタリングターゲット(以下、従来
ターゲットという)を作製した。BEST MODE FOR CARRYING OUT THE INVENTION As a raw material, Ag, In, and Sn are melted in a high-frequency induction heating furnace in an Ar atmosphere, and the obtained melt is made of Cr-Ag prepared in advance using a plasma arc melting furnace. Mother alloy, Co-Ag mother alloy, Ni-A
g mother alloy is added to prepare molten Ag alloy,
Diameter: 1 by casting molten alloy in Ar atmosphere
An ingot having dimensions of 00 mm and length: 90 mm was produced. This ingot is cut into slices in diameter:
A disk having a size of 100 mm and a thickness of 30 mm is prepared, and the disk is hot-rolled at 600 ° C. to prepare a rolled plate having a size of 6 mm, and machined. Due to this, diameter: 200 mm, thickness: 5
The present invention silver alloy sputtering target (hereinafter referred to as the present invention target) 1 to 23 and the comparative silver alloy sputtering target (hereinafter referred to as the comparative target) 1 to 6 having a size of mm and having the composition shown in Tables 1 and 2. And a conventional silver alloy sputtering target (hereinafter referred to as a conventional target) was produced.
【0011】この様にして得られた本発明ターゲット1
〜23、比較ターゲット1〜6および従来ターゲットを
それぞれ厚さ:10mmの無酸素銅製冷却板にIn−S
n共晶はんだを用いてはんだ付けしたのち、通常の直流
マグネトロンスパッタリング装置に取り付け、さらに直
径:120mm、厚さ:1.2mmの寸法を有するポリ
カーボネート樹脂板をターゲットと基板の距離が7cm
となるようにセットし、チャンバー内を1×10-4Pa
まで真空に引いた後、アルゴンガスをチャンバー内に
0.5Paになるまで入れ、直流電力:100Wの条件
で40秒間スパッタリングし、膜厚:100nmの反射
膜を形成した。The target 1 of the present invention thus obtained
23 to 23, comparative targets 1 to 6 and conventional target, respectively, were placed on a cooling plate made of oxygen-free copper having a thickness of 10 mm and In-S.
After soldering with n eutectic solder, it was attached to a normal DC magnetron sputtering device, and a polycarbonate resin plate having a diameter of 120 mm and a thickness of 1.2 mm was placed at a distance of 7 cm between the target and the substrate.
Set so that the inside of the chamber is 1 × 10 −4 Pa.
After evacuating to a vacuum, argon gas was introduced into the chamber until the pressure became 0.5 Pa, and sputtering was performed for 40 seconds under the condition of DC power: 100 W to form a reflective film having a film thickness of 100 nm.
【0012】これら反射膜に、波長が405nmおよび
650nmのレーザー光を照射してエリプソメータによ
り反射率を測定し、その後反射膜を恒温恒湿槽容器(80
℃、85%)に200時間保持した後、同様にして波長が
405nmおよび650nmのレーザー光を照射してエ
リプソメータにより反射率を測定し、その結果を表1〜
2に示すことにより反射膜の耐候性を評価した。Laser light having wavelengths of 405 nm and 650 nm is applied to these reflective films to measure the reflectance with an ellipsometer, and then the reflective films are placed in a constant temperature and humidity container (80
C., 85%) for 200 hours, and then similarly irradiated with laser beams having wavelengths of 405 nm and 650 nm to measure the reflectance with an ellipsometer.
The weather resistance of the reflective film was evaluated as shown in FIG.
【0013】[0013]
【表1】 [Table 1]
【0014】[0014]
【表2】 [Table 2]
【0015】表1〜2に示される結果から、この発明の
本発明ターゲット1〜23を用いてスパッタリングを行
うことにより得られた反射膜は、比較ターゲット1〜6
および従来ターゲットを用いてスパッタリングを行うこ
とにより得られた反射膜に比べて反射率の低下が少ない
ところから、耐候性に優れていることがわかる。From the results shown in Tables 1 and 2, the reflective films obtained by performing the sputtering using the targets 1 to 23 of the present invention are comparative targets 1 to 6.
Further, it can be seen that the weather resistance is excellent because the reflectance is less deteriorated as compared with the reflective film obtained by performing the sputtering using the conventional target.
【0016】[0016]
【発明の効果】上述のように、この発明の光記録媒体の
反射膜形成用銀合金スパッタリングターゲットを用いて
作製した反射膜は、従来の光記録媒体の反射膜形成用銀
合金スパッタリングターゲットを用いて作製した反射膜
に比べて、経時変化による反射率の低下が少なく、長期に
わたって使用できる光記録媒体を製造することができ、
メディア産業の発展に大いに貢献し得るものである。As described above, the reflection film prepared by using the silver alloy sputtering target for forming the reflection film of the optical recording medium of the present invention uses the conventional silver alloy sputtering target for forming the reflection film of the optical recording medium. Compared with the reflective film prepared by the above, there is less decrease in reflectance due to aging, and it is possible to manufacture an optical recording medium that can be used for a long time.
It can greatly contribute to the development of the media industry.
Claims (2)
計で0.5〜15質量%を含み、さらにCr,Co,N
iの内の1種または2種以上を合計で0.01〜5質量
%を含み、残部がAgである組成の銀合金からなること
を特徴とする光記録媒体の反射膜形成用銀合金スパッタ
リングターゲット。1. A total of 0.5 to 15 mass% of one or two of In and Sn, and Cr, Co, N.
A silver alloy sputtering for forming a reflective film of an optical recording medium, which is composed of a silver alloy having a composition containing 0.01 to 5 mass% of one or more of i in total, with the balance being Ag. target.
グすることにより形成された経時変化の少ない光記録媒
体の反射膜。2. A reflective film for an optical recording medium, which is formed by sputtering the target according to claim 1 and has little change over time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001358852A JP3915114B2 (en) | 2001-11-26 | 2001-11-26 | Silver alloy sputtering target for reflection film formation of optical recording media |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001358852A JP3915114B2 (en) | 2001-11-26 | 2001-11-26 | Silver alloy sputtering target for reflection film formation of optical recording media |
Publications (2)
Publication Number | Publication Date |
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JP2003160859A true JP2003160859A (en) | 2003-06-06 |
JP3915114B2 JP3915114B2 (en) | 2007-05-16 |
Family
ID=19169960
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JP2001358852A Expired - Fee Related JP3915114B2 (en) | 2001-11-26 | 2001-11-26 | Silver alloy sputtering target for reflection film formation of optical recording media |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003100112A1 (en) * | 2002-05-28 | 2003-12-04 | Ishifuku Metal Industry Co., Ltd. | Sputtering target material |
WO2004053861A1 (en) * | 2002-12-10 | 2004-06-24 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film of optical recording medium |
WO2005020222A1 (en) * | 2003-08-20 | 2005-03-03 | Mitsubishi Materials Corporation | Reflection film optical recording medium and silver alloy sputtering target for forming reflection film |
WO2005056849A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy with excellent reflectance-maintaining characteristics |
WO2005056848A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film |
JP5522599B1 (en) * | 2012-12-21 | 2014-06-18 | 三菱マテリアル株式会社 | Ag alloy sputtering target |
US20170191154A1 (en) * | 2015-02-27 | 2017-07-06 | Mitsubishi Materials Corporation | Ag ALLOY SPUTTERING TARGET AND Ag ALLOY FILM MANUFACTURING METHOD |
-
2001
- 2001-11-26 JP JP2001358852A patent/JP3915114B2/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003100112A1 (en) * | 2002-05-28 | 2003-12-04 | Ishifuku Metal Industry Co., Ltd. | Sputtering target material |
WO2004053861A1 (en) * | 2002-12-10 | 2004-06-24 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film of optical recording medium |
WO2005020222A1 (en) * | 2003-08-20 | 2005-03-03 | Mitsubishi Materials Corporation | Reflection film optical recording medium and silver alloy sputtering target for forming reflection film |
WO2005056849A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy with excellent reflectance-maintaining characteristics |
WO2005056848A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film |
US7413618B2 (en) | 2003-12-10 | 2008-08-19 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film |
JP5522599B1 (en) * | 2012-12-21 | 2014-06-18 | 三菱マテリアル株式会社 | Ag alloy sputtering target |
WO2014097961A1 (en) * | 2012-12-21 | 2014-06-26 | 三菱マテリアル株式会社 | Ag-In ALLOY SPUTTERING TARGET |
JP2014139339A (en) * | 2012-12-21 | 2014-07-31 | Mitsubishi Materials Corp | Ag alloy sputtering target |
US20170191154A1 (en) * | 2015-02-27 | 2017-07-06 | Mitsubishi Materials Corporation | Ag ALLOY SPUTTERING TARGET AND Ag ALLOY FILM MANUFACTURING METHOD |
US10577687B2 (en) * | 2015-02-27 | 2020-03-03 | Mitsubishi Materials Corporation | Ag alloy sputtering target and Ag alloy film manufacturing method |
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