JP2003152241A - Magnetoresistive effect type magnetic sensor, magnetoresistive effect type magnetic head, and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve efficiency and yield, and to uniformize characteristics of a magnetoresist effect type magnetic sensor having CPP configuration in which, with a conductive pillar provided, a sense current concentrates on an SV type GMR element. SOLUTION: There are provided an SV type giant magnetoresistive effect element 1, a conductive pillar 41 which defines a surface-vertical conductive region for the SV type giant magnetoresistive effect element 1, an insulating layer 42 which is disposed to contact, by surface, the conductive pillar 41 and defines a conductive region for the conductive pillar 41, and a hard magnetic layer 43 for stabilizing bias to a magnetized free layer of the SV type giant magnetoresistive effect element 1. The hard magnetic layer 43 for stabilizing bias comprises an opening 43W on the upper surface of the conductive pillar 41. The SV type giant magnetoresistive effect element 1 is so formed as to cover the opening 43W of the hard magnetic layer 43 for stabilizing bias, and its magnetized free layer is so formed as to contact the conductive pillar 41 through the opening 43W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect type magnetic sensor, a magnetoresistive effect type magnetic head, and manufacturing methods thereof.

[0002]

2. Description of the Related Art In recent years, in a magnetic recording / reproducing apparatus such as an HDD (Hard Disc Drive), a high recording density has been rapidly advanced, and accordingly, a magnetic head corresponding to the high recording density is required. When the recording density is increased in this way, the recording pit size recorded on the magnetic recording medium is reduced accordingly, so that the signal magnetic field is reduced. Therefore, the conventional general electromagnetic induction type magnetic head that indirectly detects the signal magnetic field by the electromagnetic induction by the ring core cannot secure sufficient detection sensitivity.

On the other hand, a magnetoresistive effect magnetic head which directly senses a signal magnetic field based on recorded information from a magnetic recording medium by utilizing the magnetoresistive effect has attracted attention. This is because the magnetoresistive effect element that constitutes the magnetically sensitive portion of this magnetoresistive effect type magnetic head can directly sense the signal magnetic field at a short distance from the surface of the magnetic recording medium, for high sensitivity reproduction. Because it can be done.

At present, as the magnetoresistive effect type magnetic head, a magnetic head using a spin valve type giant magnetoresistive effect element (hereinafter referred to as an SV type GMR element) is predominant.

In this SV type GMR element, in the case of a so-called CPP (Current Perpedicular to Plane) type structure in which a sense current is passed in a direction intersecting with the film surface of the SV type GMR element, the SV type GMR element operates efficiently. In this case, it is desired that the sense current is concentratedly applied to the sensitivity region of the SV type GMR element, and further to the central portion showing the highest sensitivity. This is a strong demand especially in the reduction of the track width accompanying the increase in recording density.

Conventionally, in the magnetoresistive effect type magnetic sensor having this CPP type SV type GMR element, as shown in the schematic sectional view of the main part of FIG.
In order to concentrate the conduction of the sense current to the central portion of No. 1, the conductive pillar 102 defining the conduction region of the sense current is arranged below the SV type GMR element 101.

The conductive pillar 102 includes a first electrode 1
11 is formed. The width of the upper surface of the conductive pillar 102 is selected to be smaller than the width of the SV type GMR element 101, and the insulating layer 103 is juxtaposed on the outer side of the conductive pillar 102 so as to be limited to the central portion of the SV type GMR element 101. The conductive pillars 102 are brought into contact with each other.

A hard magnetic layer 104 for stabilizing bias is formed on both sides of the SV type GMR element 101 on the insulating layer 103.
Are arranged in a junction, and the direction of the magnetic moment of the magnetic free layer of the SV-type GMR element 101 with respect to the direction of the detection external magnetic field introduced into the SV-type GMR element 101 is not applied. It is designed to set the direction to cross. Then, the SV type GMR element 10
A second electrode 112 is contacted on top of 1.

In the magnetoresistive effect type magnetic sensor having this structure, the stabilizing bias hard magnetic layers 104 are joined to both end portions of the SV type GMR element 101, and the magnetic moment is present at this joined portion. Since, is fixed, the magnetoresistive sensitivities are not exhibited at the side end portions and the vicinity thereof, and the central portion of the SV type GMR element 101 exhibits the highest sensitivity.

However, in the magnetoresistive effect type magnetic sensor having this structure, the position of the conductive pillar 102 and the position of the SV type GMR element 101 are independent, and therefore, in practice, FIG. As shown in the schematic sectional view, the positional relationship between the conductive pillar 102 and the SV type GMR element 101 is likely to be displaced. If such a shift occurs, the current-concentration position of the sense current shifts from the sensitivity region of the SV type GMR element 101, which not only lowers the efficiency of the magnetoresistive effect but also varies the characteristics. Yield loss comes.

[0011]

SUMMARY OF THE INVENTION In the present invention, a magnetoresistive effect type magnetic sensor having a CPP structure in which the above-mentioned conductive pillar is provided to concentrate a sense current to an SV type GMR element, and this magnetoresistive effect is provided. In a magnetoresistive effect magnetic head having a magnetic sensor as a magnetic sensing portion, efficiency is improved, characteristics are made uniform, and yield is improved.

[0012]

A magnetoresistive effect type magnetic sensor according to the present invention is a spin valve type giant sensor in which a magnetization fixed layer and an antiferromagnetic layer are sequentially laminated on a magnetization free layer with a nonmagnetic spacer layer interposed therebetween. It has a magnetoresistive effect element and a conductive pillar that defines a surface perpendicular conduction region for the spin-valve giant magnetoresistive effect element.

Further, the spinner giant magnetoresistive effect element is stabilized with respect to the magnetization free layer by having an insulating layer which is disposed in contact with the conductive pillar in a plane and which defines a current-carrying region in the conductive pillar. It has a hard magnetic layer for bias.

In the hard magnetic layer for stabilizing bias, an opening is formed across the upper surface of the conductive pillar to define the sensitivity region of the spin-valve giant magnetoresistive effect element, and further crosses this opening for stabilizing bias. A magnetization free layer is formed over the hard magnetic layer, and the magnetization free layer is electrically connected to the conductive pillar.

Further, the magnetoresistive effect magnetic head according to the present invention is configured such that the magnetically sensitive portion thereof is the magnetoresistive effect type magnetic sensor according to the present invention described above.

Further, in the method of manufacturing a magnetoresistive effect type magnetic sensor according to the present invention, a step of forming a conductive layer for forming a conductive pillar on the first electrode, and a magnetoresistive effect type finally formed. A step of forming a mask layer only in a portion that becomes a surface perpendicular current-carrying region to the magnetic sensor; a step of selectively removing the conductive layer by etching using the mask layer as an etching mask to form a conductive pillar; A step of forming an insulating layer across the layer and the removed portion of the conductive layer; a step of forming a stabilizing bias hard magnetic layer on the insulating layer; and a step of removing the mask layer and A step of removing the insulating layer deposited on the mask layer and the hard magnetic layer for stabilizing bias thereover to form an opening across the upper surface of the conductive pillar; and a step of forming an opening across the opening on the hard magnetic layer for stabilizing bias. Across And a step of forming a structure layer of the spin-valve, giant-magnetoresistive devices are sequentially laminated to form a film and a reduction free layer and the nonmagnetic spacer layer and the magnetization fixed layer and the antiferromagnetic layer. Thereafter, this constituent layer is crossed over the opening of the hard magnetic layer for stabilizing bias and is patterned into a required pattern across the hard magnetic layer for stabilizing bias to form a spin-valve giant magnetoresistive effect element. Then, a second electrode is deposited on the spin-valve giant magnetoresistive effect element.

Further, the present invention is a method of manufacturing a magnetoresistive effect magnetic head, the magnetic sensing part of which is constituted by a magnetoresistive effect type magnetic sensor, wherein the magnetic sensitive part is the magnetic resistance according to the above-mentioned present invention. It is manufactured by the manufacturing method of the effect type magnetic sensor.

According to the configurations of the magnetoresistive effect magnetic sensor and the magnetoresistive effect magnetic head according to the present invention described above,
The spin valve type giant magnetoresistive element (SV type GM
The stabilizing bias for the magnetization free layer of (R element) is given by the magnetic field from the hard magnetic layer for stabilizing bias, and is directly laminated on the hard magnetic layer for stabilizing bias of the SV type GMR element. Since the magnetic moment of the exposed portion is fixed by the magnetic field of the hard magnetic layer for stabilizing bias, the SV type GMR element becomes a non-sensing region where the SV type GMR element does not show sensitivity.

In the structure of the present invention, since the opening of the hard magnetic layer for stabilizing bias is formed across the conductive pillar, the contact portion of the SV type GMR element with the conductive pillar has the stabilizing bias. The portion where the hard magnetic layer for use is not formed becomes a region showing sensitivity, and the sense current is applied only to the portion having this sensitivity.

In the method of manufacturing the magnetoresistive effect magnetic sensor and the magnetoresistive effect magnetic head according to the present invention, the conductive pillar is formed by selectively etching the conductive layer. By using a common mask layer for the mask layer for etching, a common mask layer for the patterning mask of the insulating bias layer and the hard magnetic layer for stabilizing bias for controlling the conductive region of the conductive pillar, a conductive piercer error is generated. The positional relationship between the insulating layer and the opening of the stabilizing bias hard magnetic layer can be self-aligned.
Therefore, the desired magnetoresistive effect magnetic sensor and magnetoresistive effect magnetic head having uniform characteristics can be manufactured.

[0021]

FIG. 1 is a schematic cross-sectional view of a main part of an embodiment of a magnetoresistive effect magnetic head according to the present invention having a magnetoresistive effect type magnetic sensor according to the present invention as a magnetic sensing section. . However, it goes without saying that the invention is not limited to this embodiment and example.

Magnetoresistive magnetic sensor 1 according to the present invention
0 is a spin valve giant magnetoresistive effect element (SV type G
MR element) 1, a conductive pillar 41 defining a surface perpendicular conduction region for the MR element, and an insulating layer arranged in planar contact with the conductive pillar 41 and defining a conduction region in the conductive pillar 41. 42 and a stabilizing bias hard magnetic layer 43.

The magnetoresistive head 5 according to the present invention.
In the case of 0, the magnetically sensitive portion is constituted by the above-described magnetoresistive effect magnetic sensor 10. In this example, for example, the first electrode 31 such as the first electrode and magnetic shield is formed on the substrate 21, and the conductive pillar 41 and the insulating layer 42 are planarly formed on the first electrode 31. A hard magnetic layer 43 for stabilizing bias is formed on 42. The stabilizing bias hard magnetic layer 43 exposes the upper surface of the conductive pillar 41,
An opening 43W having a size larger than this is formed, and the stabilizing bias hard magnetic layer 43 in and around the opening 43W is formed.
The SV type GMR element 1 is formed over the above. A second electrode 42, for example, a second electrode and magnetic shield is formed on this.

The SV type GMR element 1 has a so-called top type structure, and as shown in the schematic sectional view of FIG. 2, from the lower layer side in contact with the conductive pillar 41 and the stabilizing bias hard magnetic layer 43 of FIG. For example, a magnetization free layer 11 having a laminated structure of a CoFe magnetic layer and a NiFe magnetic layer is formed, and a nonmagnetic spacer layer 12 made of Cu, for example, 2 is formed on the magnetization free layer 11.
The antiferromagnetic layer 14 includes a magnetization pinned layer 13 having a ferromagnetic laminated ferri structure in which the CoFe magnetic layer of the layer is laminated via a Ru layer, and an antiferromagnetic layer 14 exchange-coupled to the magnetization pinned layer. A protective layer 15 made of, for example, Ta is formed on the top.

Then, the stabilizing bias hard magnetic layer 43.
Is magnetized to apply a stabilizing bias magnetic field to the magnetization free layer by applying a magnetic field in a predetermined direction along the surface direction under heating. On the other hand, the anti-magnetism of the SV type GMR element 1 described with reference to FIG. Ferromagnetic layer 14 and magnetization fixed layer 13
Similarly, magnetization is performed in the direction intersecting the above-mentioned bias magnetic field along the plane direction.

In this structure, the SV type GMR element 1
Is strongly fixed by the magnetization of the stabilizing bias hard magnetic layer 43, the magnetic moment does not rotate due to the detection magnetic field, and this region is , The non-sensing area, but the opening 4
Within 3 W, especially in the center thereof, there is no contact with the stabilizing bias hard magnetic layer 43 and an appropriate bias magnetic field is applied, so that it is a region showing high sensitivity. Since the opening 43W is formed across the upper surface of the conductive pillar 41, the conductive pillar 41 has the SV type GMR element 1 in its entire width in the track width direction.
Is electrically contacted with the magnetization free layer 1.

A sense current is passed between the first and second electrodes (electrode and magnetic shield) 31 and 32. In this way, the conductive layer 41 restricts the current-carrying region by the insulating layer 42, and the conductive pillar 41 is also controlled.
The sense current is supplied to the SV type GMR element 1 by controlling the contact with the sense current. That is, the sense current is supplied only to the high sensitivity region of the SV type GMR element.

Incidentally, the above-mentioned magnetoresistive effect type magnetic sensor,
The magnetoresistive head is a common substrate (not shown)
Needless to say, a plurality of magnetoresistive effect type magnetic sensors and a plurality of magnetoresistive effect type magnetic heads can be simultaneously manufactured by forming a plurality of them simultaneously on the above. Then, by polishing the front surface thereof, for example, a magnetoresistive effect type magnetic sensor or a magnetoresistive effect type magnetic head in which the SV type GMR element is directly exposed can be constructed. Then, on this front surface, as shown in FIG. 1, the stabilizing bias hard magnetic layer 43 is formed.
The opening width is, for example, the track width WT of the magnetoresistive effect type magnetic head, and the detection magnetic field, for example, a recording signal magnetic field on the magnetic recording medium is introduced to perform reproduction. That is,
This front surface is, for example, a so-called “A” that is in sliding contact with the magnetic recording medium or is levitationally opposed to the magnetic recording medium.
It becomes BS (Air Bearing Surface).

Alternatively, for example, a magnetic flux guide layer (not shown) which is magnetically coupled is arranged in front of the SV type GMR element, and the front end of the magnetic flux guide layer is formed so as to face the front surface of the magnetoresistive head. The signal magnetic field from the magnetic recording medium can be introduced into the SV type GMR element 1 via the magnetic flux guide layer. Further, by arranging the rear flux guide layer at the rear end of the SV type GMR element 1 so as to be magnetically coupled, the detection signal magnetic field can be effectively communicated with the SV type GMR element 1.

Magnetoresistive magnetic head 5 according to the present invention
At 0, the width of the opening 43W defines the track width WT of the magnetic head, and the sensitivity region is formed within this track width WT.

Next, with reference to FIGS. 3 to 5, an example of a method of manufacturing a magnetoresistive effect magnetic head according to the present invention and a magnetoresistive effect magnetic head having a magnetically sensitive portion will be described. In this case, as shown in FIG. 3A, for example, Cu, Ta, Au, permalloy, etc. are formed on the first electrode 31 or the electrode / magnetic shield formed on a substrate (not shown) made of, for example, AlTiC (AlTiC). And so on,
The conductive layer 61 forming the above-mentioned conductive pillar 41 is formed by sputtering or the like.

As shown in FIG. 3B, a mask layer 62, which serves as an etching mask for patterning the conductive layer 61 by, for example, ion milling, is formed on the conductive layer 61 by, for example, coating a photoresist layer, pattern exposure, and developing treatment. It is formed to a thickness of 300 nm to 600 nm. As shown in FIG. 3C, the conductive pillar 41 is formed by pattern etching, for example, by ion milling using the mask layer 62 as an etching mask.

As shown in FIG. 4A, an insulating layer 42 made of, for example, Al ₂ O ₃ is formed over the entire surface including the mask layer 62.
Is deposited by RF (radio frequency) sputtering to a thickness of, for example, 50 nm, which is thicker than the thickness of the conductive pillar 41, and further, a stabilizing bias hard magnetic layer 43 of, for example, CoCrPt is formed by DC sputtering to have a thickness of 50 nm.
Is formed over the entire surface.

Thereafter, as shown in FIG. 4B, the mask layer 6
2 is removed, and the insulating layer 42 attached thereto and the stabilizing bias hard magnetic layer 43 thereon are lifted off. The removal of the mask layer 62, that is, the lift-off is performed with N, for example.
MP (nanomethylpyrrolidone) (liquid temperature 80 ° C) and I
Using PA (isopropyl alcohol) (liquid temperature 23 ° C.), 200 W to 300 W, 50 kHz to 60 k, respectively
The first and second NMs under the application of ultrasonic waves at Hz
It can be carried out by treatments in the P tank for 60 minutes and 30 minutes, respectively, and then in the same treatment in the third IPA tank by applying ultrasonic waves.

In this case, the thickness of the mask layer 62 is selected to be much larger than the thickness of the insulating layer 42 and the stabilizing bias hard magnetic layer 43, so that these films are formed on the mask layer 62. Since the film is formed in a state in which cracks are likely to occur at the corners at the periphery of the base, the lift-off removes the mask layer 62 and at the same time, the formation portion of the mask layer 62 is torn off, so to speak, the opening 43.
W is formed, and a concave portion 66 that enters the insulating layer 42 is formed,
The upper surface of the conductive pillar 41 faces the bottom of the recess 66,
An insulating layer 42 and a stabilizing bias hard magnetic layer 43 are formed on the inner surface thereof. That is, the insulating layer 42 is interposed between the conductive pillar 41 and the stabilizing bias hard magnetic layer 43.

Next, as shown in FIG. 4C, the respective constituent films of the SV type GMR element explained in FIG. 2 are entirely crossed over the opening 43W and the recess 42G and on the hard magnetic layer 43 for stabilizing bias. The SV laminated film 63 is formed by lamination.

Thereafter, as shown in FIG. 5A, the mask layer 6 is formed.
4 on the pattern corresponding to the pattern of the SV type GMR element 1 to be finally formed, for example, by applying a photoresist,
The mask layer 64 is formed by pattern exposure and development, and pattern etching is performed by, for example, ion milling using the mask layer 64 as an etching mask. In this way, the SV type GMR element 1 is constituted by the remaining SV laminated film. In this case, in the SV type GMR element 1, the opening 43W of the stabilizing bias hard magnetic layer 43 is crossed at least in the track width direction, and both side edges extend on the stabilizing bias hard magnetic layer 43. Is formed.

Thereafter, as shown in FIG. 5B, the mask layer 6
4 is removed, and the second electrode 32 or the second electrode / magnetic shield is formed. In this way, the spin-valve giant magnetoresistive effect element (SV type GMR element) 1 and the conductive pillar 41 that defines the surface perpendicular conduction region for the same.
And a magnetoresistive effect magnetic layer having a stabilizing bias hard magnetic layer 43 and an insulating layer 42 which is arranged in a plane and is joined to both side ends of the conductive pillar 41 to define a conductive region of the conductive pillar 41. The sensor 10 is configured, and the magnetoresistive effect magnetic head 50 having the magnetic sensing unit is configured.

In the case of the method described above, the unnecessary portions of the insulating layer 42 and the stabilizing bias hard magnetic layer 43 are lifted off together with the mask layer 62. In this case, the remaining portions are torn off to some extent and lifted off. Therefore, if there is a concern that some tearing will occur at the edge of the mask layer 62, the mask layer 62 is squeezed (constricted) to the base side.
By using a mask forming method that causes
In addition, a discontinuity is formed between the portion of the stabilizing bias hard magnetic layer 43 attached to the mask layer 62 and another portion, that is, the base of the mask layer 62, so that the lift-off can be favorably performed. can do.

That is, in this case, a constricted portion which is stepwise or gradually narrowed is formed on the base side of the mask layer 62. An example of this case will be described with reference to FIGS. As shown in FIG. 6A, as in the case shown in FIG. 3A, the conductive layer 61 is formed by sputtering or the like on the first electrode 31 or the electrode / magnetic shield formed on the substrate (not shown). Then, the mask layer 62 is formed on this, but in this example,
The mask layer 62 is used as the first and second photoresist layers 6
2A and 62B are formed into a two-layer structure, which is subjected to pattern exposure and development processing, and as shown in FIG. 6B, the upper second photoresist layer 62B corresponds to the pattern of the target conductive pillar. The pattern of the first photoresist layer 62A is formed in a pattern, and the constriction 65 is formed so as to be inward from the side edge of the pattern of the upper second photoresist layer 62B.

In the first and second photoresist layers 62A and 62B, the lower first photoresist layer 62A has a higher solubility in a developing solution, and the upper second photoresist layer is the second photoresist layer 62A. As compared with the photoresist layer 62B, a photoresist having a lower solubility in a developing solution for the photoresist layer 62B is used. For example, the first photoresist layer 62A is, for example, LOL-1000 (manufactured by Shipley Far East Co.), and its developing solution is SSF.
D-159 (manufactured by Shin-Etsu Chemical Co., Ltd.) is used. Further, the second photoresist layer 62B is formed of, for example, ZEP-520-22.
(Manufactured by Zeon Corporation), and ZEP-
RD (manufactured by Nippon Zeon Co., Ltd.) or, for example, ZEP-2
000 (manufactured by Nippon Zeon Co., Ltd.), and Z is used as the developer.
MD-D (manufactured by Zeon Corporation) is used.

Next, as shown in FIG. 6B, the conductive layer 61 is etched by, for example, ion milling. In this case, since anisotropic etching is performed, the conductive layer 61 is etched on the pattern of the upper photoresist layer 62B having a large pattern, and the conductive pin 41 is formed by following this pattern.

Thereafter, as shown in FIG. 7A, the insulating layer 42 and the stabilizing bias hard magnetic layer 43 are formed in the same manner as described with reference to FIG. 4A. In this case, since the constriction 65 exists at the base of the mask layer 62, the constriction 6 is formed.
In FIG. 5, the insulating layer 42 and the stabilizing bias hard magnetic layer 43 are not deposited, or a discontinuous portion is formed by a portion that is hardly deposited.

After that, as shown in FIG. 7B, the photoresist layer 62 is dissolved and removed by the same method as described in FIG. 4B, and the insulating layer 42 and the stabilizing bias hard magnetic material adhered to the photoresist layer 62 are removed. Lift off layer 43. In this case, as described above, since the discontinuity is formed in the insulating layer 42 and the stabilizing bias hard magnetic layer 43 due to the presence of the constriction 65 at the base of the mask layer 52, the removal of the photoresist layer 42 is performed. In addition, the insulating layer 42 and the stabilizing bias hard magnetic layer 43 can be removed smoothly, that is, an excellent pattern can be formed.

Next, the entire surface is etched to a desired thickness indicated by a chain line a in FIG. 7, so that the upper surface of the conductive pillar 41 faces the bottom and the insulating layer 42 and the insulating layer 42 stabilize on the side as shown in FIG. 7C. A recess 66 facing the hard bias magnetic layer 43 is formed.

After that, as shown in FIGS.
The target magnetoresistive effect magnetic sensor 10 is formed by taking the same steps as described in C and FIGS. 5A and 5B, and the magnetoresistive effect magnetic head 50 having the magnetic sensitive effect sensor 10 as the magnetic sensitive portion can be obtained. .

In the examples described with reference to FIGS. 6 to 8, the first and second mask materials 62A and 62B are used to cause the mask layer 62 to have a stepwise constriction 65 in cross section. As the photoresist forming the mask layer 62, a photoresist mixed with a melting accelerator, for example, SIPR-9684-0.7 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used. In this case, since the melting accelerator is segregated on the surface to be adhered to the conductive layer 61 by performing a heat treatment on this photoresist layer, that is, a so-called post-exposure baking, a mask layer is formed by performing a developing treatment after that. 62 to the base side, that is, the conductive layer 6
The solubility can be increased on the first side, and a constriction having a narrower width can be formed here, that is, on the base side of the mask layer 62. As described above, the insulating layer 42 and the hard magnetic material for stabilizing bias are formed. The lift-off of the layer 43 can be performed easily and with high accuracy.

This photoresist SIPR-9684-
The developer for 0.7 (manufactured by Shin-Etsu Chemical Co., Ltd.) is SSFD-1.
90 (manufactured by Shin-Etsu Chemical Co., Ltd.) is used.

In the magnetoresistive effect type magnetic sensor and the magnetoresistive effect type magnetic head according to the present invention thus formed, the opening of the hard magnetic layer 43 for stabilizing bias is formed in a width larger than the width of the conductive pillar 41. Are formed, and they are formed in a self-aligned manner, so that the conductive pillar 4
The current-carrying region of 1 can be directly faced to the central portion of the SV type GMR element 1 where the stabilizing bias hard magnetic layer 43 is not formed and which exhibits high sensitivity.

The magnetoresistive effect type magnetic sensor and the magnetoresistive effect type magnetic head according to the present invention are not limited to the illustrated example, and various modifications can be made in the constitution of the present invention.

A read / write magnetic head can also be constructed by integrally forming, for example, an electromagnetic induction type thin film recording head on the magnetoresistive magnetic head according to the present invention.

[0052]

As described above, according to the structures of the magnetoresistive effect magnetic sensor and the magnetoresistive effect magnetic head according to the present invention, the spin valve giant magnetoresistive effect element (S
In the V-type GMR element), the conductive pillar does not come into contact with the non-sensing region that is laminated on the stabilizing bias hard magnetic layer outside the opening of the stabilizing bias hard magnetic layer. No sense current is applied to the sensing region.

Therefore, according to the present invention, a magnetoresistive effect magnetic sensor having high magnetoresistive sensitivity and efficiency, and a magnetoresistive effect magnetic head using the same as a magnetic sensitive section are constructed. In the magnetoresistive effect magnetic head 50, the width of the opening 43W of the hard magnetic layer for stabilizing bias defines the track width WT of the magnetic head, and the sensitivity region is formed within this track width WT. As a result, so-called side reading that reads the recording signal magnetic field from the adjacent tracks can be avoided, the track pitch can be reduced, and higher density recording on the magnetic recording medium can be achieved.

In the method of manufacturing the magnetoresistive effect magnetic sensor and the magnetoresistive effect magnetic head according to the present invention, the conductive pillars are formed by selectively etching the conductive layers. By using a common mask layer for the mask layer for etching, a common mask layer for the patterning mask of the insulating bias layer and the hard magnetic layer for stabilizing bias for controlling the conductive region of the conductive pillar, a conductive piercer error is generated. Since the positional relationship between the insulating layer and the opening of the hard magnetic layer for stabilizing bias can be self-aligned, it has reliable and uniform characteristics with excellent magnetoresistive sensitivity and efficiency. The magnetoresistive effect type magnetic sensor and the magnetoresistive effect type magnetic head can be manufactured with a high yield.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of an example of a magnetoresistive effect magnetic head according to the present invention including a magnetoresistive effect magnetic sensor according to the present invention.

FIG. 2 is a schematic cross-sectional view of a main part of an example of a spin-valve giant magnetoresistive effect element used in a magnetoresistive effect magnetic sensor and a magnetoresistive effect magnetic head according to the present invention.

3A to 3C are schematic cross-sectional views (No. 1) of a main part of each step of an example of the method for manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

4A to 4C are schematic cross-sectional views (No. 2) of a main part of each step of an example of the method for manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

5A and 5B are schematic cross-sectional views (No. 3) of a main part of each step of an example of the method for manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

6A to 6C are schematic cross-sectional views (No. 1) of a main part of each step of another example of the method of manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

7A to 7C are schematic cross-sectional views (No. 2) of a main part of each step of another example of the method of manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

8A to 8C are schematic cross-sectional views (No. 3) of a main part of each step of an example of the method for manufacturing the magnetoresistive effect magnetic sensor according to the present invention.

FIG. 9 is a schematic cross-sectional view of a conventional magnetoresistive effect magnetic sensor.

FIG. 10 is a schematic sectional view of a conventional magnetoresistive effect magnetic sensor.

[Explanation of symbols]

1 ... Spin valve type giant magnetoresistive effect element (SV type GMR element), 10 ... Magnetoresistive effect type magnetic sensor,
11 ... Magnetization free layer, 12 ... Non-magnetic spacer layer,
13 ... Magnetization pinned layer, 14 ... Antiferromagnetic layer, 15 ...
..Protective layer, 21 ... Substrate, 31 ... First electrode (also magnetic shield), 32 ... Second electrode (also magnetic shield), 41 ... Conductive pillar, 42 ... Insulation layer,
43 ... Stabilizing bias hard magnetic layer, 43 W ... Opening, 50 ... Magnetoresistive magnetic head, 61 ...
Conductive layer, 62 ... Mask layer, 63 ... SV constituent layer,
64 ... Mask layer, 65 ... Constricted portion, 66 ...
Recessed portion, 101 ... Spin valve type giant magnetoresistive element (SV type GMR element), 102 ... Conductive pillar,
103 ... Insulating layer, 104 ... Stabilizing bias hard magnetic layer

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yuichi Takeda             6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni             -Inside the corporation F-term (reference) 2G017 AA10 AD55                 5D034 BA04 BA05 BA09 BA12 CA04                       CA08

Claims (6)

[Claims] 1. A spin-valve giant magnetoresistive element including a magnetization fixed layer and an antiferromagnetic layer sequentially stacked on a magnetization free layer with a nonmagnetic spacer layer interposed therebetween, and the spin-valve giant magnetoresistive element. A conductive pillar that defines a plane perpendicular conduction region to the conductive pillar, an insulating layer that is arranged in planar contact with the conductive pillar, and defines a conduction region in the conductive pillar, and the spin-valve giant magnetoresistive effect A hard magnetic layer for stabilizing bias with respect to the magnetization free layer of the element, wherein the hard magnetic layer for stabilizing bias crosses over the upper surface of the conductive pillar, and the spin-valve giant magnetoresistive effect element Of the spin-valve type giant magnetoresistive element is formed across the opening of the hard magnetic layer for stabilizing bias, and the hard magnetic layer for stabilizing bias is formed. Is formed over pointing upward, magnetoresistive magnetic sensor in which the magnetization free layer through the opening, characterized in that it is a electrically connected to each of the above conductive pillar. 2. A magnetoresistive effect type magnetic head having a magnetoresistive effect type magnetic sensor as a magnetic sensitive part, wherein the magnetic sensitive part is opposite to a magnetization fixed layer via a nonmagnetic spacer layer on a magnetization free layer. A spin-valve type giant magnetoresistive effect element formed by sequentially stacking ferromagnetic layers, a conductive pillar defining a plane perpendicular conduction region for the spin-valve type giant magnetoresistive effect element, and a planar shape with respect to the conductive pillar. An insulating layer disposed in contact with the conductive pillar to define a current-carrying region, and a stabilizing bias hard magnetic layer for the magnetization free layer of the spin-valve giant magnetoresistive element. In the hard magnetic layer for stabilizing bias, an opening is formed across the upper surface of the conductive pillar to define the sensitivity region of the spin-valve giant magnetoresistive effect element. The effect element is formed across the opening of the stabilizing bias hard magnetic layer and over the stabilizing bias hard magnetic layer, and the magnetization free layer is electrically connected to the conductive pillar through the opening. A magnetoresistive effect magnetic head having a connected structure. 3. A step of forming a conductive layer for forming a conductive pillar on the first electrode, and a surface perpendicular conduction region to a magnetoresistive effect magnetic sensor finally formed on the conductive layer. A step of forming a mask layer in a limited portion, a step of selectively etching and removing the conductive layer using the mask layer as an etching mask to form a conductive pillar, and a removing portion on the mask layer and the conductive layer. And a step of forming an insulating layer on the insulating layer, a step of forming a hard magnetic layer for stabilizing bias on the insulating layer, the mask layer is removed, and the insulating layer deposited on the mask layer is removed. A step of removing the layer and the above-mentioned hard magnetic layer for stabilizing bias to form an opening across the upper surface of the conductive pillar; and free magnetization across the hard magnetic layer for stabilizing bias across the opening. Layer and non-magnetic spacer layer and fixed magnetization And an antiferromagnetic layer are sequentially stacked to form a constituent layer of the spin-valve giant magnetoresistive effect element, and the constituent layer is crossed through the opening of the hard magnetic layer for stabilizing bias and for stabilizing bias. Forming a spin-valve giant magnetoresistive effect element by patterning over a hard magnetic layer into a desired pattern, and depositing a second electrode on the spin-valve giant magnetoresistive effect element A method of manufacturing a magnetoresistive effect type magnetic sensor, comprising: 4. In the step of forming the mask layer,
4. The magnetoresistive effect magnetic sensor according to claim 3, wherein the base has a pattern corresponding to the conductive pillar, and the base side gradually or stepwise narrows to form a constricted portion. Production method. 5. A method for manufacturing a magnetoresistive effect magnetic head using a magnetoresistive effect type magnetic sensor as a magnetic sensing part, comprising a step of forming a conductive layer on a first electrode to form a conductive pillar. A step of forming a mask layer on a portion of the conductive layer, which is to be a surface perpendicular conduction region to a finally formed magnetoresistive effect magnetic sensor, and the conductive layer is selectively used by using the mask layer as an etching mask. To form conductive pillars by etching and removing, and a step of forming an insulating layer over the mask layer and the removed portion of the conductive layer, and a stabilizing bias hard film on the insulating layer. A step of forming a magnetic layer, an opening crossing the upper surface of the conductive pillar by removing the mask layer, removing the insulating layer deposited on the mask layer and the hard magnetic layer for stabilizing bias on the insulating layer. The process of forming the Layers of a spin-valve giant magnetoresistive effect element formed by sequentially stacking a magnetization free layer, a nonmagnetic spacer layer, a magnetization fixed layer, and an antiferromagnetic layer over the hard magnetic layer for stabilizing bias. And forming a spin valve type giant magnetoresistive element by patterning the constituent layer across the opening of the hard magnetic layer for stabilizing bias and on the hard magnetic layer for stabilizing bias to form a desired pattern. A method of manufacturing a magnetoresistive effect magnetic head, comprising: a step of forming; and a step of depositing and forming a second electrode on the spin-valve giant magnetoresistive effect element. 6. In the step of forming the mask layer,
6. The magnetoresistive head according to claim 5, wherein the magnetoresistive head has a pattern corresponding to the conductive pillars, and the base side is gradually or stepwise narrowed to form a constricted portion. Production method.